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CRS15I30B(TE85L,QM CRS15I30B(TE85L,QM TOSHIBA CRS15I30B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; S-FLAT; reel,tape
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.4V
Load current: 1.5A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
455+ 0.16 EUR
485+ 0.14 EUR
3000+ 0.12 EUR
Mindestbestellmenge: 380
CRS20I40A(TE85L,QM TOSHIBA CRS20I40A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; S-FLAT; reel,tape
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 20A
Max. forward voltage: 0.6V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CUS10F30,H3F CUS10F30,H3F TOSHIBA CUS10F30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CUS10S30,H3F(T CUS10S30,H3F(T TOSHIBA CUS10S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 5A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CUS520,H3F(T CUS520,H3F(T TOSHIBA CUS520.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 1A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1499 Stücke:
Lieferzeit 7-14 Tag (e)
715+0.1 EUR
1490+ 0.048 EUR
1500+ 0.047 EUR
Mindestbestellmenge: 715
DF10G5M4N,LF(D DF10G5M4N,LF(D TOSHIBA Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 3.6V
Semiconductor structure: bidirectional
Features of semiconductor devices: ESD protection
Case: DFN10
Kind of package: reel; tape
Max. forward impulse current: 2A
Leakage current: 0.1µA
Peak pulse power dissipation: 30W
Breakdown voltage: 5V
Number of channels: 4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DF2B36FU,H3F(T DF2B36FU,H3F(T TOSHIBA DF2B36FU.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 32V; 2.5A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 150W
Max. off-state voltage: 28V
Breakdown voltage: 32V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6165 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
530+ 0.14 EUR
600+ 0.12 EUR
715+ 0.1 EUR
755+ 0.095 EUR
Mindestbestellmenge: 360
DF5A3.6JE,LM(T TOSHIBA DF5A3.6JE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 10µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DF5A5.6F(TE85L,F) DF5A5.6F(TE85L,F) TOSHIBA DF5A5.6F.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT25
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 1µA
Peak pulse power dissipation: 0.2W
Breakdown voltage: 5.6V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DF5A6.2CJE,LM DF5A6.2CJE,LM TOSHIBA DF5A6.2CJE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6.2V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 2.5µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 6.2V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
EMPP008Z
+1
 		EMPP008Z TOSHIBA Category: One Phase Inverters
Description: EMC cover
Type of installation accessories: EMC cover
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
GT15J341,S4X(S GT15J341,S4X(S TOSHIBA GT15J341.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 180ns
Turn-off time: 320ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 288 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.29 EUR
35+ 2.04 EUR
42+ 1.72 EUR
45+ 1.62 EUR
Mindestbestellmenge: 32
GT20J341,S4X(S GT20J341,S4X(S TOSHIBA GT20J341.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 11A
Pulsed collector current: 80A
Turn-on time: 0.2µs
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 45W
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GT30J121(Q) GT30J121(Q) TOSHIBA GT30J121.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.28 EUR
19+ 3.86 EUR
24+ 3.03 EUR
25+ 2.86 EUR
Mindestbestellmenge: 17
GT40QR21(STA1,E,D GT40QR21(STA1,E,D TOSHIBA GT40QR21.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Pulsed collector current: 80A
Turn-on time: 0.3µs
Turn-off time: 0.6µs
Type of transistor: IGBT
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO3PN
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 35A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 484 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.56 EUR
18+ 4.1 EUR
23+ 3.15 EUR
25+ 2.97 EUR
Mindestbestellmenge: 16
GT40WR21,Q(O GT40WR21,Q(O TOSHIBA GT40WR21.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.62 EUR
7+ 11.21 EUR
100+ 11.11 EUR
Mindestbestellmenge: 5
GT50JR21(STA1,E,S) GT50JR21(STA1,E,S) TOSHIBA GT50JR21.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 49A
Power dissipation: 230W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Kind of package: tube
Turn-on time: 430ns
Turn-off time: 720ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GT50JR22(STA1,E,S) GT50JR22(STA1,E,S) TOSHIBA GT50JR22.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 115W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 115W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Kind of package: tube
Turn-on time: 250ns
Turn-off time: 330ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 272 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.13 EUR
13+ 5.52 EUR
17+ 4.23 EUR
18+ 4 EUR
Mindestbestellmenge: 12
HN1B04FE-GR,LF(T HN1B04FE-GR,LF(T TOSHIBA HN1B04FE.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.1W
Case: SOT563F
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Anzahl je Verpackung: 20 Stücke
auf Bestellung 27800 Stücke:
Lieferzeit 7-14 Tag (e)
1100+0.066 EUR
1220+ 0.059 EUR
1520+ 0.047 EUR
1620+ 0.044 EUR
Mindestbestellmenge: 1100
HN1B04FU-GR(L,F,T) HN1B04FU-GR(L,F,T) TOSHIBA HN1B04FU.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC88
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1480 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
870+ 0.082 EUR
960+ 0.075 EUR
1255+ 0.057 EUR
1330+ 0.054 EUR
Mindestbestellmenge: 380
HN2S01FU(TE85L,F) TOSHIBA HN2S01FU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 15V; 0.1A; US6; reel,tape; 200mW
Mounting: SMD
Case: US6
Kind of package: reel; tape
Power dissipation: 0.2W
Type of diode: Schottky switching
Max. off-state voltage: 15V
Max. load current: 0.2A
Max. forward voltage: 0.5V
Load current: 0.1A
Semiconductor structure: triple independent
Max. forward impulse current: 1A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
JDH3D01FV(TPL3) TOSHIBA JDH3D01FV SMD Schottky diodes
Produkt ist nicht verfügbar
RFM04U6P(TE12L,F) TOSHIBA RFM04U6P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 16V; 2A; 7W; PW-Mini; Pout: 4.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 16V
Drain current: 2A
Power dissipation: 7W
Case: PW-Mini
Gate-source voltage: ±3V
Kind of package: reel; tape
Frequency: 470MHz
Kind of channel: depleted
Output power: 4.3W
Electrical mounting: SMT
Open-loop gain: 13.3dB
Efficiency: 70%
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
RN1401,LF(T RN1401,LF(T TOSHIBA RN1401_06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Power dissipation: 0.2W
Kind of package: reel; tape
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 30
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
auf Bestellung 4560 Stücke:
Lieferzeit 7-14 Tag (e)
1320+0.054 EUR
2040+ 0.035 EUR
2320+ 0.031 EUR
2780+ 0.026 EUR
2940+ 0.024 EUR
Mindestbestellmenge: 1320
RN1402(TE85L,F) RN1402(TE85L,F) TOSHIBA RN1401_06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RN1406(TE85L,F)
+1
 		RN1406(TE85L,F) TOSHIBA RN1406.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 545 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
545+ 0.13 EUR
850+ 0.084 EUR
Mindestbestellmenge: 380
RN1411(TE85L,F) RN1411(TE85L,F) TOSHIBA RN1410_11.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1635 Stücke:
Lieferzeit 7-14 Tag (e)
450+0.16 EUR
1405+ 0.051 EUR
1595+ 0.045 EUR
1635+ 0.044 EUR
Mindestbestellmenge: 450
RN1427(TE85L,F) RN1427(TE85L,F) TOSHIBA RN1421_27.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
Anzahl je Verpackung: 12000 Stücke
Produkt ist nicht verfügbar
RN1604(TE85L,F) RN1604(TE85L,F) TOSHIBA RN1601_06.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)
355+0.2 EUR
570+ 0.13 EUR
645+ 0.11 EUR
750+ 0.096 EUR
795+ 0.09 EUR
Mindestbestellmenge: 355
RN1910FE,LF(CT TOSHIBA RN1910FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1910FE Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ
Case: ES6
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 120...700
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.1W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RN2405,LXGF(T RN2405,LXGF(T TOSHIBA RN2410_11.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 30000 Stücke
Produkt ist nicht verfügbar
RN2410(TE85L,F) RN2410(TE85L,F) TOSHIBA RN2410_11.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2630 Stücke:
Lieferzeit 7-14 Tag (e)
450+0.16 EUR
1375+ 0.052 EUR
1560+ 0.046 EUR
1670+ 0.043 EUR
Mindestbestellmenge: 450
RN4982FE,LF(CT TOSHIBA docget.jsp?did=19043&prodName=RN4982FE RN4982FE Complementary transistors
Produkt ist nicht verfügbar
SSM3J16FS(TE85L,F) SSM3J16FS(TE85L,F) TOSHIBA SSM3J16FS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 45Ω
Type of transistor: P-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1861 Stücke:
Lieferzeit 7-14 Tag (e)
325+0.22 EUR
560+ 0.13 EUR
625+ 0.11 EUR
685+ 0.1 EUR
725+ 0.099 EUR
3000+ 0.096 EUR
Mindestbestellmenge: 325
SSM3J327R,LF(B
+1
 		SSM3J327R,LF(B TOSHIBA SSM3J327R.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3J328R,LF(T SSM3J328R,LF(T TOSHIBA SSM3J328R.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3795 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
500+ 0.14 EUR
565+ 0.13 EUR
625+ 0.11 EUR
Mindestbestellmenge: 380
SSM3J331R,LF SSM3J331R,LF TOSHIBA SSM3J331R.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2805 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
485+ 0.15 EUR
545+ 0.13 EUR
590+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 380
SSM3J332R,LF(T
+2
 		SSM3J332R,LF(T TOSHIBA SSM3J332R.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2655 Stücke:
Lieferzeit 7-14 Tag (e)
335+0.21 EUR
540+ 0.13 EUR
605+ 0.12 EUR
705+ 0.1 EUR
740+ 0.097 EUR
Mindestbestellmenge: 335
SSM3J334R,LF(T SSM3J334R,LF(T TOSHIBA SSM3J334R.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2355 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
455+ 0.16 EUR
520+ 0.14 EUR
560+ 0.13 EUR
590+ 0.12 EUR
Mindestbestellmenge: 380
SSM3J355R,LF(T TOSHIBA SSM3J355R.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: 24A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: ±10V
On-state resistance: 52.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3J35CTC,L3F(T TOSHIBA SSM3J35CTC.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -250mA
Power dissipation: 0.5W
Case: CST3C
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K15AFS,LF(T SSM3K15AFS,LF(T TOSHIBA SSM3K15AFS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.1W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K15AFS,LF(B TOSHIBA SSM3K15AFS_datasheet_en_20140301.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.1W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SSM3K15AFU,LF(T SSM3K15AFU,LF(T TOSHIBA SSM3K15AFU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 17440 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
1150+ 0.062 EUR
1280+ 0.056 EUR
1545+ 0.046 EUR
1635+ 0.044 EUR
Mindestbestellmenge: 380
SSM3K16FU(TE85L,F) SSM3K16FU(TE85L,F) TOSHIBA SSM3K16FU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K324R,LF(T
+1
 		SSM3K324R,LF(T TOSHIBA SSM3K324R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K329R,LF(B SSM3K329R,LF(B TOSHIBA SSM3K329R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 289mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K333R,LF(B SSM3K333R,LF(B TOSHIBA SSM3K333R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6884 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
430+ 0.17 EUR
485+ 0.15 EUR
590+ 0.12 EUR
Mindestbestellmenge: 360
SSM3K339R
+1
 		SSM3K339R TOSHIBA SSM3K339R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19680 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
564+ 0.13 EUR
637+ 0.11 EUR
756+ 0.095 EUR
800+ 0.089 EUR
Mindestbestellmenge: 358
SSM3K341R,LF(T
+1
 		SSM3K341R,LF(T TOSHIBA SSM3K341R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5823 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
151+ 0.48 EUR
171+ 0.42 EUR
208+ 0.34 EUR
220+ 0.33 EUR
Mindestbestellmenge: 72
SSM3K35MFV,L3F(T
+1
 		SSM3K35MFV,L3F(T TOSHIBA SSM3K35MFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 40000 Stücke
Produkt ist nicht verfügbar
SSM3K36FS,LF(T
+1
 		SSM3K36FS,LF(T TOSHIBA SSM3K36FS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: SSM
Gate-source voltage: ±10V
On-state resistance: 1.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K37MFV,L3F SSM3K37MFV,L3F TOSHIBA SSM3K37MFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
Anzahl je Verpackung: 5 Stücke
auf Bestellung 14225 Stücke:
Lieferzeit 7-14 Tag (e)
300+0.24 EUR
940+ 0.076 EUR
1045+ 0.069 EUR
1370+ 0.052 EUR
1450+ 0.049 EUR
Mindestbestellmenge: 300
SSM3K7002KFU,LF(T SSM3K7002KFU,LF(T TOSHIBA SSM3K7002KFU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 38340 Stücke:
Lieferzeit 7-14 Tag (e)
690+0.1 EUR
920+ 0.078 EUR
1020+ 0.07 EUR
1335+ 0.054 EUR
1415+ 0.051 EUR
Mindestbestellmenge: 690
SSM3K72CFS,LF(T SSM3K72CFS,LF(T TOSHIBA SSM3K72CFS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.15W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 0.27nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K72KCT,L3F(T TOSHIBA SSM3K72KCT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.5W
Case: CST3C
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 50000 Stücke
Produkt ist nicht verfügbar
SSM3K72KFS,LF(T
+1
 		SSM3K72KFS,LF(T TOSHIBA SSM3K72KFS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 150mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.15W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15864 Stücke:
Lieferzeit 7-14 Tag (e)
650+0.11 EUR
1265+ 0.057 EUR
1435+ 0.05 EUR
1615+ 0.044 EUR
1705+ 0.042 EUR
Mindestbestellmenge: 650
SSM6J501NU,LF SSM6J501NU,LF TOSHIBA SSM6J501NU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 1W
Gate charge: 29.9nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Case: uDFN6
On-state resistance: 43mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SSM6J502NU,LF(T SSM6J502NU,LF(T TOSHIBA SSM6J502NU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 60.5mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SSM6J503NU,LF(T SSM6J503NU,LF(T TOSHIBA SSM6J503NU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 89.6mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CRS15I30B(TE85L,QM CRS15I30B.pdf
CRS15I30B(TE85L,QM
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; S-FLAT; reel,tape
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.4V
Load current: 1.5A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
455+ 0.16 EUR
485+ 0.14 EUR
3000+ 0.12 EUR
Mindestbestellmenge: 380
CRS20I40A(TE85L,QM CRS20I40A.pdf
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; S-FLAT; reel,tape
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 20A
Max. forward voltage: 0.6V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CUS10F30,H3F CUS10F30.pdf
CUS10F30,H3F
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CUS10S30,H3F(T CUS10S30.pdf
CUS10S30,H3F(T
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 5A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CUS520,H3F(T CUS520.pdf
CUS520,H3F(T
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 1A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1499 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
1490+ 0.048 EUR
1500+ 0.047 EUR
Mindestbestellmenge: 715
DF10G5M4N,LF(D
DF10G5M4N,LF(D
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 3.6V
Semiconductor structure: bidirectional
Features of semiconductor devices: ESD protection
Case: DFN10
Kind of package: reel; tape
Max. forward impulse current: 2A
Leakage current: 0.1µA
Peak pulse power dissipation: 30W
Breakdown voltage: 5V
Number of channels: 4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DF2B36FU,H3F(T DF2B36FU.pdf
DF2B36FU,H3F(T
Hersteller: TOSHIBA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 32V; 2.5A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 150W
Max. off-state voltage: 28V
Breakdown voltage: 32V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6165 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
530+ 0.14 EUR
600+ 0.12 EUR
715+ 0.1 EUR
755+ 0.095 EUR
Mindestbestellmenge: 360
DF5A3.6JE,LM(T DF5A3.6JE.pdf
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 10µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DF5A5.6F(TE85L,F) DF5A5.6F.pdf
DF5A5.6F(TE85L,F)
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT25
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 1µA
Peak pulse power dissipation: 0.2W
Breakdown voltage: 5.6V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DF5A6.2CJE,LM DF5A6.2CJE.pdf
DF5A6.2CJE,LM
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.2V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 2.5µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 6.2V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
EMPP008Z
EMPP008Z
+1
Hersteller: TOSHIBA
Category: One Phase Inverters
Description: EMC cover
Type of installation accessories: EMC cover
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
GT15J341,S4X(S GT15J341.pdf
GT15J341,S4X(S
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 180ns
Turn-off time: 320ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 288 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.29 EUR
35+ 2.04 EUR
42+ 1.72 EUR
45+ 1.62 EUR
Mindestbestellmenge: 32
GT20J341,S4X(S GT20J341.pdf
GT20J341,S4X(S
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 11A
Pulsed collector current: 80A
Turn-on time: 0.2µs
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 45W
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GT30J121(Q) GT30J121.pdf
GT30J121(Q)
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.28 EUR
19+ 3.86 EUR
24+ 3.03 EUR
25+ 2.86 EUR
Mindestbestellmenge: 17
GT40QR21(STA1,E,D GT40QR21.pdf
GT40QR21(STA1,E,D
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Pulsed collector current: 80A
Turn-on time: 0.3µs
Turn-off time: 0.6µs
Type of transistor: IGBT
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO3PN
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 35A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 484 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.56 EUR
18+ 4.1 EUR
23+ 3.15 EUR
25+ 2.97 EUR
Mindestbestellmenge: 16
GT40WR21,Q(O GT40WR21.pdf
GT40WR21,Q(O
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.62 EUR
7+ 11.21 EUR
100+ 11.11 EUR
Mindestbestellmenge: 5
GT50JR21(STA1,E,S) GT50JR21.pdf
GT50JR21(STA1,E,S)
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 49A
Power dissipation: 230W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Kind of package: tube
Turn-on time: 430ns
Turn-off time: 720ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GT50JR22(STA1,E,S) GT50JR22.pdf
GT50JR22(STA1,E,S)
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 115W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 115W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Kind of package: tube
Turn-on time: 250ns
Turn-off time: 330ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 272 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+6.13 EUR
13+ 5.52 EUR
17+ 4.23 EUR
18+ 4 EUR
Mindestbestellmenge: 12
HN1B04FE-GR,LF(T HN1B04FE.pdf
HN1B04FE-GR,LF(T
Hersteller: TOSHIBA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.1W
Case: SOT563F
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Anzahl je Verpackung: 20 Stücke
auf Bestellung 27800 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1100+0.066 EUR
1220+ 0.059 EUR
1520+ 0.047 EUR
1620+ 0.044 EUR
Mindestbestellmenge: 1100
HN1B04FU-GR(L,F,T) HN1B04FU.pdf
HN1B04FU-GR(L,F,T)
Hersteller: TOSHIBA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC88
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1480 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
870+ 0.082 EUR
960+ 0.075 EUR
1255+ 0.057 EUR
1330+ 0.054 EUR
Mindestbestellmenge: 380
HN2S01FU(TE85L,F) HN2S01FU.pdf
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 15V; 0.1A; US6; reel,tape; 200mW
Mounting: SMD
Case: US6
Kind of package: reel; tape
Power dissipation: 0.2W
Type of diode: Schottky switching
Max. off-state voltage: 15V
Max. load current: 0.2A
Max. forward voltage: 0.5V
Load current: 0.1A
Semiconductor structure: triple independent
Max. forward impulse current: 1A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
JDH3D01FV(TPL3)
Hersteller: TOSHIBA
JDH3D01FV SMD Schottky diodes
Produkt ist nicht verfügbar
RFM04U6P(TE12L,F) RFM04U6P.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 16V; 2A; 7W; PW-Mini; Pout: 4.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 16V
Drain current: 2A
Power dissipation: 7W
Case: PW-Mini
Gate-source voltage: ±3V
Kind of package: reel; tape
Frequency: 470MHz
Kind of channel: depleted
Output power: 4.3W
Electrical mounting: SMT
Open-loop gain: 13.3dB
Efficiency: 70%
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
RN1401,LF(T RN1401_06.pdf
RN1401,LF(T
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Power dissipation: 0.2W
Kind of package: reel; tape
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 30
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
auf Bestellung 4560 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1320+0.054 EUR
2040+ 0.035 EUR
2320+ 0.031 EUR
2780+ 0.026 EUR
2940+ 0.024 EUR
Mindestbestellmenge: 1320
RN1402(TE85L,F) RN1401_06.pdf
RN1402(TE85L,F)
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RN1406(TE85L,F) RN1406.pdf
RN1406(TE85L,F)
+1
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 545 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
545+ 0.13 EUR
850+ 0.084 EUR
Mindestbestellmenge: 380
RN1411(TE85L,F) RN1410_11.pdf
RN1411(TE85L,F)
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1635 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
450+0.16 EUR
1405+ 0.051 EUR
1595+ 0.045 EUR
1635+ 0.044 EUR
Mindestbestellmenge: 450
RN1427(TE85L,F) RN1421_27.pdf
RN1427(TE85L,F)
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
Anzahl je Verpackung: 12000 Stücke
Produkt ist nicht verfügbar
RN1604(TE85L,F) RN1601_06.pdf
RN1604(TE85L,F)
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
355+0.2 EUR
570+ 0.13 EUR
645+ 0.11 EUR
750+ 0.096 EUR
795+ 0.09 EUR
Mindestbestellmenge: 355
RN1910FE,LF(CT RN1910FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1910FE
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ
Case: ES6
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 120...700
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.1W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RN2405,LXGF(T RN2410_11.pdf
RN2405,LXGF(T
Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 30000 Stücke
Produkt ist nicht verfügbar
RN2410(TE85L,F) RN2410_11.pdf
RN2410(TE85L,F)
Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2630 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
450+0.16 EUR
1375+ 0.052 EUR
1560+ 0.046 EUR
1670+ 0.043 EUR
Mindestbestellmenge: 450
RN4982FE,LF(CT docget.jsp?did=19043&prodName=RN4982FE
Hersteller: TOSHIBA
RN4982FE Complementary transistors
Produkt ist nicht verfügbar
SSM3J16FS(TE85L,F) SSM3J16FS.pdf
SSM3J16FS(TE85L,F)
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 45Ω
Type of transistor: P-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1861 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
560+ 0.13 EUR
625+ 0.11 EUR
685+ 0.1 EUR
725+ 0.099 EUR
3000+ 0.096 EUR
Mindestbestellmenge: 325
SSM3J327R,LF(B SSM3J327R.pdf
SSM3J327R,LF(B
+1
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3J328R,LF(T SSM3J328R.pdf
SSM3J328R,LF(T
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3795 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
500+ 0.14 EUR
565+ 0.13 EUR
625+ 0.11 EUR
Mindestbestellmenge: 380
SSM3J331R,LF SSM3J331R.pdf
SSM3J331R,LF
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2805 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
485+ 0.15 EUR
545+ 0.13 EUR
590+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 380
SSM3J332R,LF(T SSM3J332R.pdf
SSM3J332R,LF(T
+2
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2655 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
540+ 0.13 EUR
605+ 0.12 EUR
705+ 0.1 EUR
740+ 0.097 EUR
Mindestbestellmenge: 335
SSM3J334R,LF(T SSM3J334R.pdf
SSM3J334R,LF(T
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2355 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
455+ 0.16 EUR
520+ 0.14 EUR
560+ 0.13 EUR
590+ 0.12 EUR
Mindestbestellmenge: 380
SSM3J355R,LF(T SSM3J355R.pdf
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: 24A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: ±10V
On-state resistance: 52.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3J35CTC,L3F(T SSM3J35CTC.pdf
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -250mA
Power dissipation: 0.5W
Case: CST3C
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K15AFS,LF(T SSM3K15AFS.pdf
SSM3K15AFS,LF(T
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.1W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K15AFS,LF(B SSM3K15AFS_datasheet_en_20140301.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.1W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SSM3K15AFU,LF(T SSM3K15AFU.pdf
SSM3K15AFU,LF(T
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 17440 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
1150+ 0.062 EUR
1280+ 0.056 EUR
1545+ 0.046 EUR
1635+ 0.044 EUR
Mindestbestellmenge: 380
SSM3K16FU(TE85L,F) SSM3K16FU.pdf
SSM3K16FU(TE85L,F)
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K324R,LF(T SSM3K324R.pdf
SSM3K324R,LF(T
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K329R,LF(B SSM3K329R.pdf
SSM3K329R,LF(B
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 289mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K333R,LF(B SSM3K333R.pdf
SSM3K333R,LF(B
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6884 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
430+ 0.17 EUR
485+ 0.15 EUR
590+ 0.12 EUR
Mindestbestellmenge: 360
SSM3K339R SSM3K339R.pdf
SSM3K339R
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19680 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
564+ 0.13 EUR
637+ 0.11 EUR
756+ 0.095 EUR
800+ 0.089 EUR
Mindestbestellmenge: 358
SSM3K341R,LF(T SSM3K341R.pdf
SSM3K341R,LF(T
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5823 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
151+ 0.48 EUR
171+ 0.42 EUR
208+ 0.34 EUR
220+ 0.33 EUR
Mindestbestellmenge: 72
SSM3K35MFV,L3F(T SSM3K35MFV.pdf
SSM3K35MFV,L3F(T
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 40000 Stücke
Produkt ist nicht verfügbar
SSM3K36FS,LF(T SSM3K36FS.pdf
SSM3K36FS,LF(T
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: SSM
Gate-source voltage: ±10V
On-state resistance: 1.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K37MFV,L3F SSM3K37MFV.pdf
SSM3K37MFV,L3F
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
Anzahl je Verpackung: 5 Stücke
auf Bestellung 14225 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
300+0.24 EUR
940+ 0.076 EUR
1045+ 0.069 EUR
1370+ 0.052 EUR
1450+ 0.049 EUR
Mindestbestellmenge: 300
SSM3K7002KFU,LF(T SSM3K7002KFU.pdf
SSM3K7002KFU,LF(T
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 38340 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
690+0.1 EUR
920+ 0.078 EUR
1020+ 0.07 EUR
1335+ 0.054 EUR
1415+ 0.051 EUR
Mindestbestellmenge: 690
SSM3K72CFS,LF(T SSM3K72CFS.pdf
SSM3K72CFS,LF(T
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.15W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 0.27nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM3K72KCT,L3F(T SSM3K72KCT.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.5W
Case: CST3C
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 50000 Stücke
Produkt ist nicht verfügbar
SSM3K72KFS,LF(T SSM3K72KFS.pdf
SSM3K72KFS,LF(T
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 150mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.15W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15864 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
650+0.11 EUR
1265+ 0.057 EUR
1435+ 0.05 EUR
1615+ 0.044 EUR
1705+ 0.042 EUR
Mindestbestellmenge: 650
SSM6J501NU,LF SSM6J501NU.pdf
SSM6J501NU,LF
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 1W
Gate charge: 29.9nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Case: uDFN6
On-state resistance: 43mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SSM6J502NU,LF(T SSM6J502NU.pdf
SSM6J502NU,LF(T
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 60.5mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SSM6J503NU,LF(T SSM6J503NU.pdf
SSM6J503NU,LF(T
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 89.6mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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