Die Produkte vishay general semiconductor - diodes division
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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~~2.jpg "SS1P6L-M3/84A") |
SS1P6L-M3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO220AA Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: SS1P6 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Package / Case: DO-220AA Mounting Type: Surface Mount Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 100µA @ 60V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 60V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYM10-200-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO213AB Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10µA @ 200V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Average Rectified (Io): 1A Base Part Number: BYM10 Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Manufacturer: Vishay General Semiconductor - Diodes Division Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 25000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 29240 Stücke - Preis und Lieferfrist anzeigen
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BYM10-50-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO213AB Current - Average Rectified (Io): 1A Base Part Number: BYM10 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 50V Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4493 Stücke - Preis und Lieferfrist anzeigen
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GL41M-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO213AB Base Part Number: GL41 Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 1000V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A |
auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 14440 Stücke - Preis und Lieferfrist anzeigen
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1N4001GPHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N4002GPHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO204AL Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Diode Type: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N4003GPHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N4005GPHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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GP10AHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: GP10 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 50V Reverse Recovery Time (trr): 3µs |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYD13JGP-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Mounting Type: Through Hole Capacitance @ Vr, F: 8pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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UG1D-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 25ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 202941 Stücke - Preis und Lieferfrist anzeigen
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UG1D-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 25ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7470 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Package / Case: DO-204AL, DO-41, Axial Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 25ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Mounting Type: Through Hole Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 1878 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7470 Stücke - Preis und Lieferfrist anzeigen
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SS3P6-M3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO220AA Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
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SE10PD-M3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO220AA Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 200V Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Base Part Number: SE10 |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 16375 Stücke - Preis und Lieferfrist anzeigen
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SE10PJ-M3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO220AA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 600V Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: SE10 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 17516 Stücke - Preis und Lieferfrist anzeigen
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GP10B-4002HE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Tape & Box (TB) Base Part Number: GP10 Manufacturer: Vishay General Semiconductor - Diodes Division Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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BYS10-25HE3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 25V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYS10-35HE3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 1.5A DO214AC Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 35 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYS10-45HE3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 1.5A DO214AC Current - Reverse Leakage @ Vr: 500 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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SS26SHE3/5AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYS10-25HE3/TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 25V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYS10-35HE3/TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 35 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYS10-45HE3/TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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EGP10A-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: EGP10 Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 50V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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EGP10F-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 1A DO204AL Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYM11-100-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213AB Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYM11-1000-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO213AB Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 500ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9108 Stücke - Preis und Lieferfrist anzeigen
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BYM11-200-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO213AB Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYM11-50-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO213AB Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 50V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYM11-800-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO213AB Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 800V Reverse Recovery Time (trr): 500ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGL41A-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO213AB Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGL41B-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213AB Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGL41D-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO213AB Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGL41G-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGL41J-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO213AB Package / Case: DO-213AB, MELF (Glass) Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGL41K-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGL41M-E3/97 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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B240A-E3/5AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 2A DO214AC Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 35 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 2A DO214AC Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount |
auf Bestellung 4802 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 35 Stücke - Preis und Lieferfrist anzeigen
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RS1PBHM3/85A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO220AA Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: RS1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RS1PDHM3/85A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO220AA Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: RS1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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SE15PB-M3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1.5A DO220AA Base Part Number: SE15 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Package / Case: DO-220AA Mounting Type: Surface Mount Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 900ns Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A Current - Average Rectified (Io): 1.5A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5935 Stücke - Preis und Lieferfrist anzeigen
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SE15PD-M3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1.5A DO220AA Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Package / Case: DO-220AA Mounting Type: Surface Mount Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 900ns Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A Current - Average Rectified (Io): 1.5A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SE15 Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 14070 Stücke - Preis und Lieferfrist anzeigen
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SE15PG-M3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO220AA Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 900ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Base Part Number: SE15 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 265 Stücke - Preis und Lieferfrist anzeigen
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SE15PGHM3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO220AA Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 900ns Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A Current - Average Rectified (Io): 1.5A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Base Part Number: SE15 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11353 Stücke - Preis und Lieferfrist anzeigen
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VS-MBR160TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYS11-90-E3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1.5A DO214AC Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Active Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Current - Average Rectified (Io): 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12397 Stücke - Preis und Lieferfrist anzeigen
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BYG10D-E3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 1.5A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7177 Stücke - Preis und Lieferfrist anzeigen
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BYG10G-E3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1.5A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Reverse Recovery Time (trr): 4 µs Mounting Type: Surface Mount Diode Type: Avalanche Speed: Standard Recovery >500ns, > 200mA (Io) Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7592 Stücke - Preis und Lieferfrist anzeigen
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BYG10J-E3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1.5A Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Avalanche Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYG10K-E3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.5A Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Reverse Recovery Time (trr): 4 µs Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8525 Stücke - Preis und Lieferfrist anzeigen
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BYG10M-E3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.5A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8319 Stücke - Preis und Lieferfrist anzeigen
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RS1GHE3/5AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO214AC Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RS1GHE3/61T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO214AC Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16200 Stücke - Preis und Lieferfrist anzeigen
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RGP15B-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1.5A DO204AC Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP15D-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1.5A DO204AC Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP15G-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO204AC Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP15J-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.5A DO204AC Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 7838 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7838 Stücke - Preis und Lieferfrist anzeigen
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RGP15K-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP15A-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1.5A DO204AC Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP15B-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1.5A DO204AC Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 53 Stücke - Preis und Lieferfrist anzeigen
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RGP15D-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1.5A DO204AC Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP15G-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO204AC Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Mounting Type: Through Hole Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) |
auf Bestellung 4000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6298 Stücke - Preis und Lieferfrist anzeigen
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RGP15J-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 46555 Stücke - Preis und Lieferfrist anzeigen
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RGP15K-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1.5A DO204AC Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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SB260S-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO204AL Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 651 Stücke - Preis und Lieferfrist anzeigen
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1N4586GP-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AC Mounting Type: Through Hole Packaging: Tape & Box (TB) Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Base Part Number: 1N4586 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Package / Case: DO-204AC, DO-15, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N5397GP-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.5A DO204AC Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Diode Type: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N5399GP-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1.5A DO204 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Packaging: Tape & Box (TB) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial |
auf Bestellung 4000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1976 Stücke - Preis und Lieferfrist anzeigen
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1N4586GP-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AC Operating Temperature - Junction: -65°C ~ 175°C Base Part Number: 1N4586 Supplier Device Package: DO-204AC (DO-15) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 2µs Speed: Standard Recovery >500ns, > 200mA (Io) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N5395GP-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO204AC Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Package / Case: DO-204AC, DO-15, Axial Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N5397GP-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.5A DO204AC Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N5398GP-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1.5A DO204AC Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Diode Type: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N5399GP-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1.5A DO204 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3848 Stücke - Preis und Lieferfrist anzeigen
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GP15G-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO204AC Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.5µs Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Diode Type: Standard Current - Average Rectified (Io): 1.5A Base Part Number: GP15 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 400V Voltage - DC Reverse (Vr) (Max): 400V Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 8000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11364 Stücke - Preis und Lieferfrist anzeigen
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BA158GPEHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N6478-E3/96 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO213AB Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: 1N6478 |
auf Bestellung 1500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6262 Stücke - Preis und Lieferfrist anzeigen
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1N6480-E3/96 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO213AB Base Part Number: 1N6480 Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 200V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 200V Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10640 Stücke - Preis und Lieferfrist anzeigen
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BYD13JGPHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 200V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYD33DGPHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYD33GGPHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYD33JGPHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5 µA @ 600 V Reverse Recovery Time (trr): 250 ns Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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BYG20D-E3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 1.5A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Avalanche Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 59611 Stücke - Preis und Lieferfrist anzeigen
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BYG20G-E3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1.5A Diode Type: Avalanche Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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BYG20J-E3/TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1.5A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8791 Stücke - Preis und Lieferfrist anzeigen
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1N4004GPHE3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Package / Case: DO-204AL, DO-41, Axial Voltage - DC Reverse (Vr) (Max): 400 V Packaging: Tape & Box (TB) Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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GP10G-4004HE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Base Part Number: GP10 Manufacturer: Vishay General Semiconductor - Diodes Division Speed: Standard Recovery >500ns, > 200mA (Io) Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Part Status: Active Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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GP10M-4007HE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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EGP10AHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 50V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Reel (TR) Base Part Number: EGP10 Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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EGP10FHE3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 1A DO204AL Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N5060GP-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AC Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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1N5062GP-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AC Operating Temperature - Junction: -65°C ~ 175°C Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Supplier Device Package: DO-204AC (DO-15) Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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GP15K-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1.5A DO204AC Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 800V Reverse Recovery Time (trr): 3.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Average Rectified (Io): 1.5A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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GP15K-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1.5A DO204AC Base Part Number: GP15 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 800V Reverse Recovery Time (trr): 3.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Average Rectified (Io): 1.5A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
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GP15M-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1.5A DO204 Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: GP15 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 3.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Average Rectified (Io): 1.5A |
auf Bestellung 4000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4558 Stücke - Preis und Lieferfrist anzeigen
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UG06B-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 600MA MPG06 Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: UG06 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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SS2P5-M3/85A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 2A DO220AA Packaging: Tape & Reel (TR) Package / Case: DO-220AA Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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SS2P6HM3/85A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO220AA Packaging: Tape & Reel (TR) Package / Case: DO-220AA Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| SS1P6L-M3/84A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO220AA
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SS1P6
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 100µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 1A DO220AA
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SS1P6
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 100µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 60V
| BYM10-200-E3/97 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 200V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Base Part Number: BYM10
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 25000 Stücke Description: DIODE GEN PURP 200V 1A DO213AB
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 200V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Base Part Number: BYM10
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 29240 Stücke - Preis und Lieferfrist anzeigen
| BYM10-50-E3/97 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Current - Average Rectified (Io): 1A
Base Part Number: BYM10
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1A DO213AB
Current - Average Rectified (Io): 1A
Base Part Number: BYM10
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
auf Bestellung 4493 Stücke - Preis und Lieferfrist anzeigen
| GL41M-E3/97 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Base Part Number: GL41
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
auf Bestellung 10000 Stücke Description: DIODE GEN PURP 1KV 1A DO213AB
Base Part Number: GL41
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Lieferzeit 21-28 Tag (e)
auf Bestellung 14440 Stücke - Preis und Lieferfrist anzeigen
| 1N4001GPHE3/54 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
| 1N4002GPHE3/54 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
| 1N4003GPHE3/54 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
| 1N4005GPHE3/54 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
| GP10AHE3/54 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GP10
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 3µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1A DO204AL
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GP10
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 3µs
| BYD13JGP-E3/73 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Mounting Type: Through Hole
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Mounting Type: Through Hole
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
| UG1D-E3/73 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
auf Bestellung 202941 Stücke - Preis und Lieferfrist anzeigen
| UG1D-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 9348 Stücke - Preis und Lieferfrist anzeigen
| UG1D-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1878 Stücke Description: DIODE GEN PURP 200V 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 7470 Stücke - Preis und Lieferfrist anzeigen
| SS3P6-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
| SE10PD-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE10
auf Bestellung 9000 Stücke Description: DIODE GEN PURP 200V 1A DO220AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE10
Lieferzeit 21-28 Tag (e)
auf Bestellung 16375 Stücke - Preis und Lieferfrist anzeigen
| SE10PJ-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO220AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE10
auf Bestellung 3000 Stücke Description: DIODE GEN PURP 600V 1A DO220AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE10
Lieferzeit 21-28 Tag (e)
auf Bestellung 17516 Stücke - Preis und Lieferfrist anzeigen
| GP10B-4002HE3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Box (TB)
Base Part Number: GP10
Manufacturer: Vishay General Semiconductor - Diodes Division
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Box (TB)
Base Part Number: GP10
Manufacturer: Vishay General Semiconductor - Diodes Division
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
| BYS10-25HE3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
| BYS10-35HE3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 35V 1.5A DO214AC
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
| BYS10-45HE3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 45V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| SS26SHE3/5AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
| BYS10-25HE3/TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
| BYS10-35HE3/TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
| BYS10-45HE3/TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 45V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
| EGP10A-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: EGP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1A DO204AL
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: EGP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
| EGP10F-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
| BYM11-100-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1A DO213AB
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
| BYM11-1000-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke Description: DIODE GEN PURP 1KV 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 9108 Stücke - Preis und Lieferfrist anzeigen
| BYM11-200-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| BYM11-50-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| BYM11-800-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RGL41A-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
| RGL41B-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1A DO213AB
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
| RGL41D-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO213AB
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
| RGL41G-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO213AB
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
| RGL41J-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO213AB
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
| RGL41K-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
| RGL41M-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
| B240A-E3/5AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 2A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 4837 Stücke - Preis und Lieferfrist anzeigen
| B240A-E3/5AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
auf Bestellung 4802 Stücke Description: DIODE SCHOTTKY 40V 2A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 35 Stücke - Preis und Lieferfrist anzeigen
| RS1PBHM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RS1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1A DO220AA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RS1
| RS1PDHM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RS1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RS1
| SE15PB-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO220AA
Base Part Number: SE15
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 900ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3000 Stücke Description: DIODE GEN PURP 100V 1.5A DO220AA
Base Part Number: SE15
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 900ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 5935 Stücke - Preis und Lieferfrist anzeigen
| SE15PD-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO220AA
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 900ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SE15
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3000 Stücke Description: DIODE GEN PURP 200V 1.5A DO220AA
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 900ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SE15
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 14070 Stücke - Preis und Lieferfrist anzeigen
| SE15PG-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO220AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE15
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1.5A DO220AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE15
auf Bestellung 265 Stücke - Preis und Lieferfrist anzeigen
| SE15PGHM3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 900ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE15
auf Bestellung 3000 Stücke Description: DIODE GEN PURP 400V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 900ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE15
Lieferzeit 21-28 Tag (e)
auf Bestellung 11353 Stücke - Preis und Lieferfrist anzeigen
| VS-MBR160TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
| BYS11-90-E3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 12397 Stücke - Preis und Lieferfrist anzeigen
| BYG10D-E3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 200V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
auf Bestellung 7177 Stücke - Preis und Lieferfrist anzeigen
| BYG10G-E3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.5A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Reverse Recovery Time (trr): 4 µs
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 400V 1.5A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Reverse Recovery Time (trr): 4 µs
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
auf Bestellung 7592 Stücke - Preis und Lieferfrist anzeigen
| BYG10J-E3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 600V 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
| BYG10K-E3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 µs
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 800V 1.5A
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 µs
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
auf Bestellung 8525 Stücke - Preis und Lieferfrist anzeigen
| BYG10M-E3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 1KV 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 8319 Stücke - Preis und Lieferfrist anzeigen
| RS1GHE3/5AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
| RS1GHE3/61T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 16200 Stücke - Preis und Lieferfrist anzeigen
| RGP15B-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO204AC
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1.5A DO204AC
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
| RGP15D-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO204AC
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1.5A DO204AC
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
| RGP15G-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
| RGP15J-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 7838 Stücke Description: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 7838 Stücke - Preis und Lieferfrist anzeigen
|
| RGP15K-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
| RGP15A-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1.5A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
| RGP15B-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO204AC
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1.5A DO204AC
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
auf Bestellung 53 Stücke - Preis und Lieferfrist anzeigen
| RGP15D-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
| RGP15G-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AC
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
auf Bestellung 4000 Stücke Description: DIODE GEN PURP 400V 1.5A DO204AC
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6298 Stücke - Preis und Lieferfrist anzeigen
| RGP15J-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Diode Type: Standard
auf Bestellung 46555 Stücke - Preis und Lieferfrist anzeigen
| RGP15K-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
| SB260S-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 2A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
auf Bestellung 651 Stücke - Preis und Lieferfrist anzeigen
| 1N4586GP-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AC
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Base Part Number: 1N4586
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AC
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Base Part Number: 1N4586
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
| 1N5397GP-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| 1N5399GP-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO204
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
auf Bestellung 4000 Stücke Description: DIODE GEN PURP 1KV 1.5A DO204
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Lieferzeit 21-28 Tag (e)
auf Bestellung 1976 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4586GP-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N4586
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N4586
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Manufacturer: Vishay General Semiconductor - Diodes Division
| 1N5395GP-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-204AC, DO-15, Axial
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1.5A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-204AC, DO-15, Axial
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
| 1N5397GP-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AC
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.5A DO204AC
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| 1N5398GP-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
| 1N5399GP-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO204
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1.5A DO204
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 3848 Stücke - Preis und Lieferfrist anzeigen
| GP15G-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AC
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5µs
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Diode Type: Standard
Current - Average Rectified (Io): 1.5A
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 400V
Voltage - DC Reverse (Vr) (Max): 400V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 8000 Stücke Description: DIODE GEN PURP 400V 1.5A DO204AC
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5µs
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Diode Type: Standard
Current - Average Rectified (Io): 1.5A
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 400V
Voltage - DC Reverse (Vr) (Max): 400V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 11364 Stücke - Preis und Lieferfrist anzeigen
| BA158GPEHE3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
| 1N6478-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N6478
auf Bestellung 1500 Stücke Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N6478
Lieferzeit 21-28 Tag (e)
auf Bestellung 6262 Stücke - Preis und Lieferfrist anzeigen
| 1N6480-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Base Part Number: 1N6480
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3000 Stücke Description: DIODE GEN PURP 200V 1A DO213AB
Base Part Number: 1N6480
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 10640 Stücke - Preis und Lieferfrist anzeigen
| BYD13JGPHE3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| BYD33DGPHE3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| BYD33GGPHE3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
| BYD33JGPHE3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Reverse Recovery Time (trr): 250 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Reverse Recovery Time (trr): 250 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Tape & Reel (TR)
| BYG20D-E3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 200V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
auf Bestellung 59611 Stücke - Preis und Lieferfrist anzeigen
| BYG20G-E3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.5A
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 400V 1.5A
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
| BYG20J-E3/TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 600V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 8791 Stücke - Preis und Lieferfrist anzeigen
| 1N4004GPHE3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Package / Case: DO-204AL, DO-41, Axial
Voltage - DC Reverse (Vr) (Max): 400 V
Packaging: Tape & Box (TB)
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Package / Case: DO-204AL, DO-41, Axial
Voltage - DC Reverse (Vr) (Max): 400 V
Packaging: Tape & Box (TB)
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
| GP10G-4004HE3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Base Part Number: GP10
Manufacturer: Vishay General Semiconductor - Diodes Division
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Base Part Number: GP10
Manufacturer: Vishay General Semiconductor - Diodes Division
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Part Status: Active
Packaging: Tape & Box (TB)
| GP10M-4007HE3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AL
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
| EGP10AHE3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: EGP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: EGP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Manufacturer: Vishay General Semiconductor - Diodes Division
| EGP10FHE3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
| 1N5060GP-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AC
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AC
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
| 1N5062GP-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Supplier Device Package: DO-204AC (DO-15)
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Supplier Device Package: DO-204AC (DO-15)
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
| GP15K-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1.5A DO204AC
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
| GP15K-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO204AC
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1.5A DO204AC
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
| GP15M-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO204
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
auf Bestellung 4000 Stücke Description: DIODE GEN PURP 1KV 1.5A DO204
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Lieferzeit 21-28 Tag (e)
auf Bestellung 4558 Stücke - Preis und Lieferfrist anzeigen
| UG06B-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 600MA MPG06
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: UG06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 600MA MPG06
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: UG06
| SS2P5-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 50V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
| SS2P6HM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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