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BAS281-GS08 BAS281-GS08 Vishay General Semiconductor - Diodes Division bas281.pdf Description: DIODE SCHOTTKY 40V 30MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS281-GS08 BAS281-GS08 Vishay General Semiconductor - Diodes Division bas281.pdf Description: DIODE SCHOTTKY 40V 30MA SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2364 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
55+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
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SM6T27AHM3_A/H SM6T27AHM3_A/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T27AHM3_A/I SM6T27AHM3_A/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX584C10-V-G-08 BZX584C10-V-G-08 Vishay General Semiconductor - Diodes Division BZX584C-V-G-Series.pdf Description: DIODE ZENER 10V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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BZX584C10-V-G-08 BZX584C10-V-G-08 Vishay General Semiconductor - Diodes Division BZX584C-V-G-Series.pdf Description: DIODE ZENER 10V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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MMSZ4702-E3-18 MMSZ4702-E3-18 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 15V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Produkt ist nicht verfügbar
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MMSZ4702-E3-18 MMSZ4702-E3-18 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
auf Bestellung 8346 Stücke:
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77+0.23 EUR
113+0.16 EUR
274+0.064 EUR
500+0.061 EUR
1000+0.059 EUR
2000+0.058 EUR
5000+0.057 EUR
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1.5KE150A-E3/73 1.5KE150A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5KE150AHE3_A/D 1.5KE150AHE3_A/D Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE150AHE3_A/C 1.5KE150AHE3_A/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE150A-E3/51 1.5KE150A-E3/51 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBJ3V3HE3_A/I SMBJ3V3HE3_A/I Vishay General Semiconductor - Diodes Division smbj3v3.pdf Description: TVS DIODE 3.3VWM 10.3V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 200A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3_A/H SMBJ3V3HM3_A/H Vishay General Semiconductor - Diodes Division smbj3v3.pdf Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3_A/I SMBJ3V3HM3_A/I Vishay General Semiconductor - Diodes Division smbj3v3.pdf Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3/H SMBJ3V3HM3/H Vishay General Semiconductor - Diodes Division smbj3v3.pdf Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3/I SMBJ3V3HM3/I Vishay General Semiconductor - Diodes Division smbj3v3.pdf Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ43CD-M3/I SMBJ43CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 43VWM 68.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.76A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 68.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBJ43CD-M3/I SMBJ43CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 43VWM 68.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.76A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 68.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBJ43CD-M3/H SMBJ43CD-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 43VWM 68.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.76A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 68.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 8250 Stücke:
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750+0.2 EUR
1500+0.19 EUR
2250+0.18 EUR
3750+0.16 EUR
7500+0.15 EUR
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SMBJ43CD-M3/H SMBJ43CD-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 43VWM 68.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.76A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 68.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 9174 Stücke:
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43+0.42 EUR
100+0.28 EUR
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SMBJ40CD-M3/I SMBJ40CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 40VWM 63.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.43A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 45.1V
Voltage - Clamping (Max) @ Ipp: 63.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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6400+0.12 EUR
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SMBJ40CD-M3/I SMBJ40CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 40VWM 63.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.43A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 45.1V
Voltage - Clamping (Max) @ Ipp: 63.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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46+0.39 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
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SMBJ40CD-M3/H SMBJ40CD-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 40VWM 63.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.43A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 45.1V
Voltage - Clamping (Max) @ Ipp: 63.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 8250 Stücke:
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750+0.12 EUR
Mindestbestellmenge: 750
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SMBJ40CD-M3/H SMBJ40CD-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 40VWM 63.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.43A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 45.1V
Voltage - Clamping (Max) @ Ipp: 63.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 8741 Stücke:
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32+0.56 EUR
47+0.38 EUR
100+0.26 EUR
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VS-EPU6006LHN3 VS-EPU6006LHN3 Vishay General Semiconductor - Diodes Division vs-epu_apu6006lhn3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 895 Stücke:
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3+7.15 EUR
25+4.06 EUR
100+3.32 EUR
500+2.73 EUR
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SS10P6HM3_A/H SS10P6HM3_A/H Vishay General Semiconductor - Diodes Division ss10p6.pdf Description: DIODE SCHOTTKY 60V 7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 560pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 7 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS10P6HM3_A/H SS10P6HM3_A/H Vishay General Semiconductor - Diodes Division ss10p6.pdf Description: DIODE SCHOTTKY 60V 7A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 560pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 7 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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SS10P6-M3/87A SS10P6-M3/87A Vishay General Semiconductor - Diodes Division ss10p6.pdf Description: DIODE SCHOTTKY 60V 7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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SS10P6-M3/87A SS10P6-M3/87A Vishay General Semiconductor - Diodes Division ss10p6.pdf Description: DIODE SCHOTTKY 60V 7A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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SS10PH45HM3_A/I SS10PH45HM3_A/I Vishay General Semiconductor - Diodes Division ss10ph45.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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SS10PH45HM3_A/I SS10PH45HM3_A/I Vishay General Semiconductor - Diodes Division ss10ph45.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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SS10PH45HM3_A/H SS10PH45HM3_A/H Vishay General Semiconductor - Diodes Division ss10ph45.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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SS10PH45HM3_A/H SS10PH45HM3_A/H Vishay General Semiconductor - Diodes Division ss10ph45.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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SS10PH45-M3/86A SS10PH45-M3/86A Vishay General Semiconductor - Diodes Division ss10ph45.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Produkt ist nicht verfügbar
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SS10PH45-M3/86A SS10PH45-M3/86A Vishay General Semiconductor - Diodes Division ss10ph45.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
auf Bestellung 2248 Stücke:
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SS10PH10-M3/87A SS10PH10-M3/87A Vishay General Semiconductor - Diodes Division ss10ph10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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SS10PH10-M3/87A SS10PH10-M3/87A Vishay General Semiconductor - Diodes Division ss10ph10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 3032 Stücke:
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SS10PH10HM3_A/I SS10PH10HM3_A/I Vishay General Semiconductor - Diodes Division ss10ph10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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SS10PH10HM3_A/I SS10PH10HM3_A/I Vishay General Semiconductor - Diodes Division ss10ph10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 17667 Stücke:
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10+1.76 EUR
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500+0.72 EUR
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VS-8ETX06-M3 VS-8ETX06-M3 Vishay General Semiconductor - Diodes Division vs-8etx06.pdf Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 1000 Stücke:
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10+1.88 EUR
50+0.66 EUR
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500+0.62 EUR
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VS-8ETX06S-M3 VS-8ETX06S-M3 Vishay General Semiconductor - Diodes Division vs-8etx06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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VS-8ETX06-1-M3 VS-8ETX06-1-M3 Vishay General Semiconductor - Diodes Division vs-8etx06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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VS-8ETX06STRL-M3 VS-8ETX06STRL-M3 Vishay General Semiconductor - Diodes Division vs-8etx06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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VS-8ETX06STRR-M3 VS-8ETX06STRR-M3 Vishay General Semiconductor - Diodes Division vs-8etx06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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P6SMB250AHM3_C/I P6SMB250AHM3_C/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB250AHM3_C/H P6SMB250AHM3_C/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB250A-M3R/52 Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 400W 250V DO214AA
Produkt ist nicht verfügbar
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P6SMB250A-E3R/52 P6SMB250A-E3R/52 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMB250A01HM3_C/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE DO214AA
Produkt ist nicht verfügbar
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P6SMB250A01HM3_A/I P6SMB250A01HM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB250AHM3_A/H P6SMB250AHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB250AHM3_A/I P6SMB250AHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RGF1M-7000HE3_A/I RGF1M-7000HE3_A/I Vishay General Semiconductor - Diodes Division rgf1.pdf Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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30CPQ080 30CPQ080 Vishay General Semiconductor - Diodes Division 30CPQ080%2C%20100.pdf Description: DIODE ARR SCHOTT 80V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Produkt ist nicht verfügbar
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VS-30CPQ080PBF VS-30CPQ080PBF Vishay General Semiconductor - Diodes Division VS-30CPQ1%28PbF%2CN3%29.pdf Description: DIODE ARR SCHOTT 80V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Produkt ist nicht verfügbar
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SMC5K12AHM3_A/H SMC5K12AHM3_A/H Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMC5K12AHM3_A/H SMC5K12AHM3_A/H Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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3KASMC12AHM3_B/H 3KASMC12AHM3_B/H Vishay General Semiconductor - Diodes Division 3kasmc.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 151A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
850+0.76 EUR
Mindestbestellmenge: 850
Im Einkaufswagen  Stück im Wert von  UAH
3KASMC12AHM3_B/H 3KASMC12AHM3_B/H Vishay General Semiconductor - Diodes Division 3kasmc.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 151A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.99 EUR
11+1.63 EUR
100+1.27 EUR
Mindestbestellmenge: 9
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BAS281-GS08 bas281.pdf
BAS281-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 30MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS281-GS08 bas281.pdf
BAS281-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 30MA SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
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SM6T27AHM3_A/H sm6t.pdf
SM6T27AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T27AHM3_A/I sm6t.pdf
SM6T27AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX584C10-V-G-08 BZX584C-V-G-Series.pdf
BZX584C10-V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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BZX584C10-V-G-08 BZX584C-V-G-Series.pdf
BZX584C10-V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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MMSZ4702-E3-18 mmsz4681_to_mmsz4717.pdf
MMSZ4702-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Produkt ist nicht verfügbar
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MMSZ4702-E3-18 mmsz4681_to_mmsz4717.pdf
MMSZ4702-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
auf Bestellung 8346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
113+0.16 EUR
274+0.064 EUR
500+0.061 EUR
1000+0.059 EUR
2000+0.058 EUR
5000+0.057 EUR
Mindestbestellmenge: 77
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1.5KE150A-E3/73 15ke.pdf
1.5KE150A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5KE150AHE3_A/D 15ke.pdf
1.5KE150AHE3_A/D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE150AHE3_A/C 15ke.pdf
1.5KE150AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE150A-E3/51 15ke.pdf
1.5KE150A-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBJ3V3HE3_A/I smbj3v3.pdf
SMBJ3V3HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 10.3V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 200A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3_A/H smbj3v3.pdf
SMBJ3V3HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3_A/I smbj3v3.pdf
SMBJ3V3HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3/H smbj3v3.pdf
SMBJ3V3HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3/I smbj3v3.pdf
SMBJ3V3HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ43CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ43CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 68.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.76A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 68.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBJ43CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ43CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 68.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.76A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 68.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBJ43CD-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ43CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 68.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.76A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 68.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 8250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.2 EUR
1500+0.19 EUR
2250+0.18 EUR
3750+0.16 EUR
7500+0.15 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ43CD-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ43CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 68.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.76A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 68.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 9174 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.28 EUR
Mindestbestellmenge: 29
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SMBJ40CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ40CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 63.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.43A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 45.1V
Voltage - Clamping (Max) @ Ipp: 63.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3200+0.13 EUR
6400+0.12 EUR
Mindestbestellmenge: 3200
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ40CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ40CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 63.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.43A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 45.1V
Voltage - Clamping (Max) @ Ipp: 63.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 12390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.39 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ40CD-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ40CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 63.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.43A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 45.1V
Voltage - Clamping (Max) @ Ipp: 63.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 8250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.12 EUR
Mindestbestellmenge: 750
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SMBJ40CD-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ40CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 63.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.43A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 45.1V
Voltage - Clamping (Max) @ Ipp: 63.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 8741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.26 EUR
Mindestbestellmenge: 32
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VS-EPU6006LHN3 vs-epu_apu6006lhn3.pdf
VS-EPU6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
25+4.06 EUR
100+3.32 EUR
500+2.73 EUR
Mindestbestellmenge: 3
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SS10P6HM3_A/H ss10p6.pdf
SS10P6HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 560pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 7 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS10P6HM3_A/H ss10p6.pdf
SS10P6HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 560pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 7 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
14+1.32 EUR
100+0.91 EUR
500+0.76 EUR
Mindestbestellmenge: 12
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SS10P6-M3/87A ss10p6.pdf
SS10P6-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS10P6-M3/87A ss10p6.pdf
SS10P6-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 8343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
35+0.51 EUR
100+0.48 EUR
500+0.43 EUR
1000+0.4 EUR
Mindestbestellmenge: 28
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SS10PH45HM3_A/I ss10ph45.pdf
SS10PH45HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6500+0.26 EUR
Mindestbestellmenge: 6500
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SS10PH45HM3_A/I ss10ph45.pdf
SS10PH45HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 59178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
57+0.31 EUR
Mindestbestellmenge: 19
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SS10PH45HM3_A/H ss10ph45.pdf
SS10PH45HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.36 EUR
3000+0.29 EUR
7500+0.27 EUR
Mindestbestellmenge: 1500
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SS10PH45HM3_A/H ss10ph45.pdf
SS10PH45HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.79 EUR
100+0.54 EUR
500+0.41 EUR
Mindestbestellmenge: 14
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SS10PH45-M3/86A ss10ph45.pdf
SS10PH45-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Produkt ist nicht verfügbar
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SS10PH45-M3/86A ss10ph45.pdf
SS10PH45-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
auf Bestellung 2248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
27+0.67 EUR
100+0.54 EUR
500+0.42 EUR
Mindestbestellmenge: 18
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SS10PH10-M3/87A ss10ph10.pdf
SS10PH10-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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SS10PH10-M3/87A ss10ph10.pdf
SS10PH10-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 3032 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
20+0.9 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.49 EUR
2000+0.47 EUR
Mindestbestellmenge: 13
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SS10PH10HM3_A/I ss10ph10.pdf
SS10PH10HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6500+0.5 EUR
Mindestbestellmenge: 6500
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SS10PH10HM3_A/I ss10ph10.pdf
SS10PH10HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 17667 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
16+1.16 EUR
100+0.93 EUR
500+0.72 EUR
1000+0.63 EUR
2000+0.6 EUR
Mindestbestellmenge: 10
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VS-8ETX06-M3 vs-8etx06.pdf
VS-8ETX06-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
50+0.66 EUR
100+0.65 EUR
500+0.62 EUR
Mindestbestellmenge: 10
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VS-8ETX06S-M3 vs-8etx06s-m3.pdf
VS-8ETX06S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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VS-8ETX06-1-M3 vs-8etx06s-m3.pdf
VS-8ETX06-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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VS-8ETX06STRL-M3 vs-8etx06s-m3.pdf
VS-8ETX06STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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VS-8ETX06STRR-M3 vs-8etx06s-m3.pdf
VS-8ETX06STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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P6SMB250AHM3_C/I p6smb.pdf
P6SMB250AHM3_C/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB250AHM3_C/H p6smb.pdf
P6SMB250AHM3_C/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB250A-M3R/52 p6smb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 400W 250V DO214AA
Produkt ist nicht verfügbar
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P6SMB250A-E3R/52
P6SMB250A-E3R/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB250A01HM3_C/I p6smb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB250A01HM3_A/I p6smb.pdf
P6SMB250A01HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB250AHM3_A/H p6smb.pdf
P6SMB250AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB250AHM3_A/I p6smb.pdf
P6SMB250AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RGF1M-7000HE3_A/I rgf1.pdf
RGF1M-7000HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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30CPQ080 30CPQ080%2C%20100.pdf
30CPQ080
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
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VS-30CPQ080PBF VS-30CPQ1%28PbF%2CN3%29.pdf
VS-30CPQ080PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Produkt ist nicht verfügbar
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SMC5K12AHM3_A/H smc5k10a.pdf
SMC5K12AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMC5K12AHM3_A/H smc5k10a.pdf
SMC5K12AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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3KASMC12AHM3_B/H 3kasmc.pdf
3KASMC12AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 151A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.76 EUR
Mindestbestellmenge: 850
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3KASMC12AHM3_B/H 3kasmc.pdf
3KASMC12AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 151A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
11+1.63 EUR
100+1.27 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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