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TZMC22-GS08 TZMC22-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 22V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TZMC22-GS08 TZMC22-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 22V 500MW SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Grade: Automotive
auf Bestellung 2378 Stücke:
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122+0.17 EUR
247+0.084 EUR
500+0.083 EUR
1000+0.081 EUR
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BZD27B4V7P-M3-08 BZD27B4V7P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZD27B4V7P-M3-08 BZD27B4V7P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZX384C11-E3-08 BZX384C11-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 11V 200MW SOD323
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BZX384C11-E3-08 BZX384C11-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 11V 200MW SOD323
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1.5SMC200AHE3_A/H 1.5SMC200AHE3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 171VWM 274VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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1.5SMC200CAHE3_A/H 1.5SMC200CAHE3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 171VWM 274VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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1.5SMC200CAHM3_A/H 1.5SMC200CAHM3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 171VWM 274VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZG03C12-HM3-08 BZG03C12-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
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3000+0.55 EUR
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1.5SMC200AHE3_A/I 1.5SMC200AHE3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 171VWM 274VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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1.5SMC200AHM3_A/H 1.5SMC200AHM3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 171VWM 274VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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1.5SMC200AHM3/H 1.5SMC200AHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 171VWM 274VC DO214AB
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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1.5SMC200AHM3/I 1.5SMC200AHM3/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 171VWM 274VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V1P6-M3/H V1P6-M3/H Vishay General Semiconductor - Diodes Division v1p6.pdf Description: DIODE SCHOTTKY 60V 1A MICROSMP
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
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V1P6-M3/H V1P6-M3/H Vishay General Semiconductor - Diodes Division v1p6.pdf Description: DIODE SCHOTTKY 60V 1A MICROSMP
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
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BZX384B5V6-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
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BZX384B5V6-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B5V6-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B5V6-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B5V6-E3-08 BZX384B5V6-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZX384B5V6-E3-08 BZX384B5V6-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZX384B5V6-E3-18 BZX384B5V6-E3-18 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZX384B5V6-E3-18 BZX384B5V6-E3-18 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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63+0.33 EUR
100+0.3 EUR
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BZT52B7V5-HE3-08 BZT52B7V5-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 7.5V 410MW SOD123
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Power - Max: 410 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 7 Ohms
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BZT52B7V5-HE3-08 BZT52B7V5-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 7.5V 410MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Power - Max: 410 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N6385HE3_A/D 1N6385HE3_A/D Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 15VWM 21.4VC 1.5KE
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1N6385HE3_A/C 1N6385HE3_A/C Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 15VWM 21.4VC 1.5KE
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1N6385HE3/51 1N6385HE3/51 Vishay General Semiconductor - Diodes Division ICTE5-18C,_1N6373-86_Sep.22.16.pdf Description: TVS DIODE 15VWM 21.4VC 1.5KE
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BZD27B6V2P-M3-08 BZD27B6V2P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 6.2V 800MW DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27B6V2P-M3-08 BZD27B6V2P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 6.2V 800MW DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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15+1.44 EUR
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100+0.58 EUR
500+0.44 EUR
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BZD27C36P-HE3-08 BZD27C36P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BZD27C36P-HE3-08 BZD27C36P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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VS-6TQ045S-M3 VS-6TQ045S-M3 Vishay General Semiconductor - Diodes Division vs-6tqs-m3.pdf Description: DIODE SCHOTTKY 45V 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
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VS-90APS08L-M3 Vishay General Semiconductor - Diodes Division vs-90epsl-m3.pdf Description: RECTIFIER DIODE 90A 800V TO-247A
Produkt ist nicht verfügbar
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SMF33A-HE3-08 SMF33A-HE3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 33VWM 53.3VC DO219AB
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 3.8A
Capacitance @ Frequency: 198pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Qualification: AEC-Q101
Grade: Automotive
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SMF33A-HE3-08 SMF33A-HE3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 33VWM 53.3VC DO219AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 3.8A
Capacitance @ Frequency: 198pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BZX84B3V0-E3-08 BZX84B3V0-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 3V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZX84B3V0-E3-08 BZX84B3V0-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 3V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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TZMC47-GS18 TZMC47-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 47V 500MW SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 110 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TZMC47-GS18 TZMC47-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 47V 500MW SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 110 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
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ZMY56-GS08 ZMY56-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 56V 1W DO213AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 42 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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ZMY56-GS08 ZMY56-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 56V 1W DO213AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 42 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Cut Tape (CT)
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5KP13A-E3/54 5KP13A-E3/54 Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE 13VWM 21.5VC P600
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 5000W (5kW)
Produkt ist nicht verfügbar
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5KP13A-E3/54 5KP13A-E3/54 Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE 13VWM 21.5VC P600
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
Power Line Protection: No
auf Bestellung 104 Stücke:
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VS-E4PU6006L-N3 VS-E4PU6006L-N3 Vishay General Semiconductor - Diodes Division vs-e4pu6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 538 Stücke:
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25+2.95 EUR
100+2.44 EUR
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VS-E4PU6006LHN3 VS-E4PU6006LHN3 Vishay General Semiconductor - Diodes Division vs-e4pu6006lhn3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Produkt ist nicht verfügbar
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EGP31B-E3/C Vishay General Semiconductor - Diodes Division egp31abcdfg.pdf Description: DIODE GEN PURP 100V 3A DO201AD
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 117pF @ 4V, 1MHz
Technology: Standard
Produkt ist nicht verfügbar
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SS2H10HE3_A/H SS2H10HE3_A/H Vishay General Semiconductor - Diodes Division ss2h9.pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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750+0.48 EUR
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SS2H10HE3_A/H SS2H10HE3_A/H Vishay General Semiconductor - Diodes Division ss2h9.pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 9855 Stücke:
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SS3H10HE3_B/H SS3H10HE3_B/H Vishay General Semiconductor - Diodes Division ss3h9.pdf Description: DIODE SCHOTTKY 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SS3H10HE3_B/H SS3H10HE3_B/H Vishay General Semiconductor - Diodes Division ss3h9.pdf Description: DIODE SCHOTTKY 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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ZPY5V1-TAP ZPY5V1-TAP Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 5.1V 1.3W DO41
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VS-8TQ080S-M3 VS-8TQ080S-M3 Vishay General Semiconductor - Diodes Division vs-8tqs-m3.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
auf Bestellung 161 Stücke:
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VS-8TQ080STRL-M3 VS-8TQ080STRL-M3 Vishay General Semiconductor - Diodes Division vs-8tqs-m3.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Produkt ist nicht verfügbar
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VS-8TQ080STRR-M3 VS-8TQ080STRR-M3 Vishay General Semiconductor - Diodes Division vs-8tqs-m3.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Produkt ist nicht verfügbar
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MSE1PJHM3J/89A MSE1PJHM3J/89A Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE GEN PURP 600V 1A MICROSMP
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
auf Bestellung 22500 Stücke:
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MSE1PJHM3J/89A MSE1PJHM3J/89A Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE GEN PURP 600V 1A MICROSMP
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
auf Bestellung 26335 Stücke:
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100+1.54 EUR
500+1.31 EUR
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BZD27B12P-M3-08 BZD27B12P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 12V 800MW DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
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3000+0.2 EUR
6000+0.18 EUR
15000+0.17 EUR
21000+0.15 EUR
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BZD27B12P-M3-08 BZD27B12P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 12V 800MW DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 29296 Stücke:
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47+0.45 EUR
100+0.24 EUR
500+0.23 EUR
1000+0.21 EUR
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TZMC22-GS08 tzm.pdf
TZMC22-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TZMC22-GS08 tzm.pdf
TZMC22-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Grade: Automotive
auf Bestellung 2378 Stücke:
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AnzahlPrivatkunde
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122+0.17 EUR
247+0.084 EUR
500+0.083 EUR
1000+0.081 EUR
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BZD27B4V7P-M3-08 bzd27b-mseries.pdf
BZD27B4V7P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 30000 Stücke:
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AnzahlPrivatkunde
3000+0.35 EUR
9000+0.3 EUR
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BZD27B4V7P-M3-08 bzd27b-mseries.pdf
BZD27B4V7P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 35826 Stücke:
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AnzahlPrivatkunde
15+1.44 EUR
24+0.9 EUR
50+0.67 EUR
100+0.58 EUR
500+0.44 EUR
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BZX384C11-E3-08 PdfFile_148489.pdf
BZX384C11-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 200MW SOD323
Produkt ist nicht verfügbar
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BZX384C11-E3-08 PdfFile_148489.pdf
BZX384C11-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 200MW SOD323
Produkt ist nicht verfügbar
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1.5SMC200AHE3_A/H 15smc.pdf
1.5SMC200AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC200CAHE3_A/H 15smc.pdf
1.5SMC200CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC200CAHM3_A/H 15smc.pdf
1.5SMC200CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG03C12-HM3-08 bzg03c-m-series.pdf
BZG03C12-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.6 EUR
3000+0.55 EUR
4500+0.52 EUR
Mindestbestellmenge: 1500 Stücke
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1.5SMC200AHE3_A/I 15smc.pdf
1.5SMC200AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC200AHM3_A/H 15smc.pdf
1.5SMC200AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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1.5SMC200AHM3/H 15smc.pdf
1.5SMC200AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC DO214AB
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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1.5SMC200AHM3/I 15smc.pdf
1.5SMC200AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V1P6-M3/H v1p6.pdf
V1P6-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A MICROSMP
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
auf Bestellung 36000 Stücke:
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V1P6-M3/H v1p6.pdf
V1P6-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A MICROSMP
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
auf Bestellung 43089 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
46+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.13 EUR
2000+0.11 EUR
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BZX384B5V6-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B5V6-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B5V6-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B5V6-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B5V6-E3-08 PdfFile_148489.pdf
BZX384B5V6-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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BZX384B5V6-E3-08 PdfFile_148489.pdf
BZX384B5V6-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 38615 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
46+0.46 EUR
63+0.33 EUR
100+0.3 EUR
500+0.21 EUR
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BZX384B5V6-E3-18 PdfFile_148489.pdf
BZX384B5V6-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.14 EUR
Mindestbestellmenge: 10000 Stücke
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BZX384B5V6-E3-18 PdfFile_148489.pdf
BZX384B5V6-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 11865 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
46+0.46 EUR
63+0.33 EUR
100+0.3 EUR
500+0.21 EUR
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BZT52B7V5-HE3-08 bzt52.pdf
BZT52B7V5-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 410MW SOD123
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Power - Max: 410 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 7 Ohms
Produkt ist nicht verfügbar
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BZT52B7V5-HE3-08 bzt52.pdf
BZT52B7V5-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 410MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Power - Max: 410 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N6385HE3_A/D icte.pdf
1N6385HE3_A/D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 21.4VC 1.5KE
Produkt ist nicht verfügbar
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1N6385HE3_A/C icte.pdf
1N6385HE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 21.4VC 1.5KE
Produkt ist nicht verfügbar
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1N6385HE3/51 ICTE5-18C,_1N6373-86_Sep.22.16.pdf
1N6385HE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 21.4VC 1.5KE
Produkt ist nicht verfügbar
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BZD27B6V2P-M3-08 bzd27b-mseries.pdf
BZD27B6V2P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 800MW DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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3000+0.35 EUR
6000+0.31 EUR
9000+0.3 EUR
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BZD27B6V2P-M3-08 bzd27b-mseries.pdf
BZD27B6V2P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 800MW DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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24+0.9 EUR
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BZD27C36P-HE3-08 bzd27series.pdf
BZD27C36P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BZD27C36P-HE3-08 bzd27series.pdf
BZD27C36P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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31+0.68 EUR
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500+0.37 EUR
1000+0.3 EUR
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VS-6TQ045S-M3 vs-6tqs-m3.pdf
VS-6TQ045S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
auf Bestellung 3496 Stücke:
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5+4.24 EUR
50+2.06 EUR
100+1.84 EUR
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1000+1.34 EUR
2000+1.25 EUR
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VS-90APS08L-M3 vs-90epsl-m3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER DIODE 90A 800V TO-247A
Produkt ist nicht verfügbar
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SMF33A-HE3-08 smf5v0atosmf58a.pdf
SMF33A-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO219AB
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 3.8A
Capacitance @ Frequency: 198pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
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SMF33A-HE3-08 smf5v0atosmf58a.pdf
SMF33A-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO219AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 3.8A
Capacitance @ Frequency: 198pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 23828 Stücke:
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25+0.86 EUR
36+0.6 EUR
100+0.35 EUR
500+0.26 EUR
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BZX84B3V0-E3-08 bzx84_series.pdf
BZX84B3V0-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 12000 Stücke:
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3000+0.092 EUR
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BZX84B3V0-E3-08 bzx84_series.pdf
BZX84B3V0-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 14241 Stücke:
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42+0.5 EUR
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500+0.14 EUR
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TZMC47-GS18 tzm.pdf
TZMC47-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 110 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TZMC47-GS18 tzm.pdf
TZMC47-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 110 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 2431 Stücke:
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53+0.39 EUR
87+0.24 EUR
139+0.15 EUR
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2000+0.086 EUR
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ZMY56-GS08 zmy3v9.pdf
ZMY56-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 1W DO213AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 42 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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ZMY56-GS08 zmy3v9.pdf
ZMY56-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 1W DO213AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 42 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 12418 Stücke:
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28+0.77 EUR
35+0.62 EUR
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5KP13A-E3/54 5kp8_5a.pdf
5KP13A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC P600
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 5000W (5kW)
Produkt ist nicht verfügbar
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5KP13A-E3/54 5kp8_5a.pdf
5KP13A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC P600
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
Power Line Protection: No
auf Bestellung 104 Stücke:
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3+7.72 EUR
10+5.07 EUR
100+3.56 EUR
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VS-E4PU6006L-N3 vs-e4pu6006l-n3.pdf
VS-E4PU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 538 Stücke:
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5+4.96 EUR
25+2.95 EUR
100+2.44 EUR
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VS-E4PU6006LHN3 vs-e4pu6006lhn3.pdf
VS-E4PU6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Produkt ist nicht verfügbar
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EGP31B-E3/C egp31abcdfg.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 117pF @ 4V, 1MHz
Technology: Standard
Produkt ist nicht verfügbar
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SS2H10HE3_A/H ss2h9.pdf
SS2H10HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9750 Stücke:
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750+0.48 EUR
2250+0.4 EUR
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SS2H10HE3_A/H ss2h9.pdf
SS2H10HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 9855 Stücke:
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13+1.65 EUR
21+1.02 EUR
50+0.75 EUR
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SS3H10HE3_B/H ss3h9.pdf
SS3H10HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3400 Stücke:
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850+0.52 EUR
1700+0.49 EUR
2550+0.46 EUR
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SS3H10HE3_B/H ss3h9.pdf
SS3H10HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4908 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
21+1.04 EUR
100+0.71 EUR
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ZPY5V1-TAP zpy3v9.pdf
ZPY5V1-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.3W DO41
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VS-8TQ080S-M3 vs-8tqs-m3.pdf
VS-8TQ080S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
auf Bestellung 161 Stücke:
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7+3.14 EUR
50+1.65 EUR
100+1.5 EUR
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VS-8TQ080STRL-M3 vs-8tqs-m3.pdf
VS-8TQ080STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Produkt ist nicht verfügbar
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VS-8TQ080STRR-M3 vs-8tqs-m3.pdf
VS-8TQ080STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Produkt ist nicht verfügbar
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MSE1PJHM3J/89A mse1pj.pdf
MSE1PJHM3J/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4500+1 EUR
9000+0.9 EUR
Mindestbestellmenge: 4500 Stücke
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MSE1PJHM3J/89A mse1pj.pdf
MSE1PJHM3J/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
auf Bestellung 26335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.43 EUR
11+1.98 EUR
100+1.54 EUR
500+1.31 EUR
1000+1.06 EUR
2000+1 EUR
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BZD27B12P-M3-08 bzd27b-mseries.pdf
BZD27B12P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.18 EUR
15000+0.17 EUR
21000+0.15 EUR
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BZD27B12P-M3-08 bzd27b-mseries.pdf
BZD27B12P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 29296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
47+0.45 EUR
100+0.24 EUR
500+0.23 EUR
1000+0.21 EUR
Mindestbestellmenge: 32 Stücke
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