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VS-1EQH02-M3/H VS-1EQH02-M3/H Vishay General Semiconductor - Diodes Division vs-1eqh01-m3.pdf Description: ULTRAFAST RECTIFIER 1A DO-219AD
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1N5232C-TR 1N5232C-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 5.6V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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1N5232C-TR 1N5232C-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 5.6V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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VB40100C-E3/8W VB40100C-E3/8W Vishay General Semiconductor - Diodes Division v40100c.pdf Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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PLZ9V1C-HG3_A/H PLZ9V1C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 9.07V 960MW DO219AC
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PLZ9V1C-HG3_A/H PLZ9V1C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 9.07V 960MW DO219AC
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SBLB10L25HE3_A/P SBLB10L25HE3_A/P Vishay General Semiconductor - Diodes Division sbl10l25.pdf Description: DIODE SCHOTTKY 25V 10A TO263AB
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SBLB10L25HE3_A/I SBLB10L25HE3_A/I Vishay General Semiconductor - Diodes Division sbl10l25.pdf Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Produkt ist nicht verfügbar
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SBLB10L25HE3/45 SBLB10L25HE3/45 Vishay General Semiconductor - Diodes Division SBL(F,B)10L25_Rev_9-AUG-13.pdf Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Produkt ist nicht verfügbar
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V12PM12-M3/86A V12PM12-M3/86A Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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V12PM12-M3/86A V12PM12-M3/86A Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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TZMB2V4-GS08 TZMB2V4-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 2.4V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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TZMB2V4-GS08 TZMB2V4-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 2.4V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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BZM55B2V4-TR BZM55B2V4-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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BZM55B2V4-TR BZM55B2V4-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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GBU4GL-6420E3/51 GBU4GL-6420E3/51 Vishay General Semiconductor - Diodes Division GBU4x_ProdBundle_Aug5%2C2015.pdf Description: BRIDGE RECT 1PHASE 400V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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GBU4GL-6420M3/51 GBU4GL-6420M3/51 Vishay General Semiconductor - Diodes Division GBU4x-M3_ProdBundle_Aug5%2C2015.pdf Description: BRIDGE RECT 1PHASE 400V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1PG-M3/84A RS1PG-M3/84A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 400V 1A DO220AA
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RS1PG-M3/84A RS1PG-M3/84A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 400V 1A DO220AA
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RS1PBHM3_A/H RS1PBHM3_A/H Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PBHM3_A/I RS1PBHM3_A/I Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PDHM3_A/H RS1PDHM3_A/H Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PGHM3_A/H RS1PGHM3_A/H Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PGHM3_A/I RS1PGHM3_A/I Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PJHM3_A/H RS1PJHM3_A/H Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PJHM3_A/I RS1PJHM3_A/I Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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VS-50WQ04FNTR-M3 VS-50WQ04FNTR-M3 Vishay General Semiconductor - Diodes Division vs-50wq04fn.pdf Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
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VS-50WQ04FNTR-M3 VS-50WQ04FNTR-M3 Vishay General Semiconductor - Diodes Division vs-50wq04fn.pdf Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
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500+0.68 EUR
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P6SMB39CAHE3_A/H P6SMB39CAHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHE3_A/I P6SMB39CAHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHM3_A/H P6SMB39CAHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHE3/52 P6SMB39CAHE3/52 Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB39CAHE3/52 P6SMB39CAHE3/52 Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB39CAHM3_A/I P6SMB39CAHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHM3/H P6SMB39CAHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHM3/I P6SMB39CAHM3/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SL04-E3-18 SL04-E3-18 Vishay General Semiconductor - Diodes Division sl04.pdf Description: DIODE SCHOTTKY 40V 1.1A DO219AB
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SL04-E3-18 SL04-E3-18 Vishay General Semiconductor - Diodes Division sl04.pdf Description: DIODE SCHOTTKY 40V 1.1A DO219AB
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SS3P5-M3/84A SS3P5-M3/84A Vishay General Semiconductor - Diodes Division ss3p5.pdf Description: DIODE SCHOTTKY 50V 3A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SMC5K17A-M3/I SMC5K17A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 17VWM 27.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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SMC5K17A-M3/I SMC5K17A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 17VWM 27.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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AZ23C5V1-E3-18 AZ23C5V1-E3-18 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER ARRAY 5.1V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
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AZ23C5V1-E3-18 AZ23C5V1-E3-18 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER ARRAY 5.1V SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
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AZ23C5V1-E3-08 AZ23C5V1-E3-08 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER ARRAY 5.1V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
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AZ23C5V1-E3-08 AZ23C5V1-E3-08 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER ARRAY 5.1V SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
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BZD27B16P-HE3-08 BZD27B16P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 16V 800MW DO219AB
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BYVF32-200-E3/45 BYVF32-200-E3/45 Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 200V 18A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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MMSZ5237C-E3-08 MMSZ5237C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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MMSZ5237C-E3-08 MMSZ5237C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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BZX84B8V2-E3-08 BZX84B8V2-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 8.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
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BZX84B8V2-E3-08 BZX84B8V2-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 8.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
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42+0.5 EUR
51+0.42 EUR
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1.5KE130AHE3/51 1.5KE130AHE3/51 Vishay General Semiconductor - Diodes Division 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 111VWM 179VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5232B-E3-18 MMSZ5232B-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Produkt ist nicht verfügbar
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MMSZ5232B-E3-18 MMSZ5232B-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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VBUS054DD-HF4-GS08 VBUS054DD-HF4-GS08 Vishay General Semiconductor - Diodes Division vbus054d.pdf Description: TVS DIODE 5VWM 19VC LLP1010-5L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-5L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 57W
Power Line Protection: No
Produkt ist nicht verfügbar
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VBUS054DD-HF4-GS08 VBUS054DD-HF4-GS08 Vishay General Semiconductor - Diodes Division vbus054d.pdf Description: TVS DIODE 5VWM 19VC LLP1010-5L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-5L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 57W
Power Line Protection: No
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VBUS05M2-HT5HG3-08 VBUS05M2-HT5HG3-08 Vishay General Semiconductor - Diodes Division vbus05m2-ht5.pdf Description: TVS DIODE 5.5VWM 27VC DFN1110-3A
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1110-3A
Bidirectional Channels: 2
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VBUS05M2-HT5HG3-08 VBUS05M2-HT5HG3-08 Vishay General Semiconductor - Diodes Division vbus05m2-ht5.pdf Description: TVS DIODE 5.5VWM 27VC DFN1110-3A
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1110-3A
Bidirectional Channels: 2
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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VBUS05M2-HT5-G3-08 VBUS05M2-HT5-G3-08 Vishay General Semiconductor - Diodes Division vbus05m2-ht5.pdf Description: TVS DIODE 5.5VWM 27VC DFN1110-3A
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1110-3A
Bidirectional Channels: 2
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VBUS05M2-HT5-G3-08 VBUS05M2-HT5-G3-08 Vishay General Semiconductor - Diodes Division vbus05m2-ht5.pdf Description: TVS DIODE 5.5VWM 27VC DFN1110-3A
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1110-3A
Bidirectional Channels: 2
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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VS-1EQH02-M3/H vs-1eqh01-m3.pdf
VS-1EQH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
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25+0.83 EUR
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1N5232C-TR 1n5221.pdf
1N5232C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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10000+0.06 EUR
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1N5232C-TR 1n5221.pdf
1N5232C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 29926 Stücke:
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VB40100C-E3/8W v40100c.pdf
VB40100C-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 17694 Stücke:
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4+6.09 EUR
10+3.96 EUR
50+3.05 EUR
100+2.75 EUR
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PLZ9V1C-HG3_A/H plzseries.pdf
PLZ9V1C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.07V 960MW DO219AC
Produkt ist nicht verfügbar
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PLZ9V1C-HG3_A/H plzseries.pdf
PLZ9V1C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.07V 960MW DO219AC
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
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SBLB10L25HE3_A/P sbl10l25.pdf
SBLB10L25HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Produkt ist nicht verfügbar
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SBLB10L25HE3_A/I sbl10l25.pdf
SBLB10L25HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Produkt ist nicht verfügbar
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SBLB10L25HE3/45 SBL(F,B)10L25_Rev_9-AUG-13.pdf
SBLB10L25HE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Produkt ist nicht verfügbar
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V12PM12-M3/86A v12p12.pdf
V12PM12-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.87 EUR
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V12PM12-M3/86A v12p12.pdf
V12PM12-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
auf Bestellung 4115 Stücke:
Lieferzeit 10-14 Tag (e)
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7+3.03 EUR
11+1.93 EUR
50+1.44 EUR
100+1.29 EUR
500+1.01 EUR
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TZMB2V4-GS08 tzm.pdf
TZMB2V4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.069 EUR
5000+0.064 EUR
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TZMB2V4-GS08 tzm.pdf
TZMB2V4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 11449 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
53+0.4 EUR
108+0.19 EUR
500+0.17 EUR
1000+0.11 EUR
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BZM55B2V4-TR bzm55.pdf
BZM55B2V4-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.14 EUR
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BZM55B2V4-TR bzm55.pdf
BZM55B2V4-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 4260 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
53+0.39 EUR
74+0.29 EUR
100+0.25 EUR
500+0.18 EUR
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GBU4GL-6420E3/51 GBU4x_ProdBundle_Aug5%2C2015.pdf
GBU4GL-6420E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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GBU4GL-6420M3/51 GBU4x-M3_ProdBundle_Aug5%2C2015.pdf
GBU4GL-6420M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1PG-M3/84A rs1pb.pdf
RS1PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO220AA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RS1PG-M3/84A rs1pb.pdf
RS1PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO220AA
auf Bestellung 8950 Stücke:
Lieferzeit 10-14 Tag (e)
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RS1PBHM3_A/H rs1pb.pdf
RS1PBHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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RS1PBHM3_A/I rs1pb.pdf
RS1PBHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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RS1PDHM3_A/H rs1pb.pdf
RS1PDHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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RS1PGHM3_A/H rs1pb.pdf
RS1PGHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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RS1PGHM3_A/I rs1pb.pdf
RS1PGHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
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RS1PJHM3_A/H rs1pb.pdf
RS1PJHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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RS1PJHM3_A/I rs1pb.pdf
RS1PJHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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VS-50WQ04FNTR-M3 vs-50wq04fn.pdf
VS-50WQ04FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 1550 Stücke
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VS-50WQ04FNTR-M3 vs-50wq04fn.pdf
VS-50WQ04FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
19+1.11 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
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P6SMB39CAHE3_A/H p6smb.pdf
P6SMB39CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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P6SMB39CAHE3_A/I p6smb.pdf
P6SMB39CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
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P6SMB39CAHM3_A/H p6smb.pdf
P6SMB39CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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P6SMB39CAHE3/52 p6smb.pdf
P6SMB39CAHE3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHE3/52 p6smb.pdf
P6SMB39CAHE3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHM3_A/I p6smb.pdf
P6SMB39CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
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P6SMB39CAHM3/H p6smb.pdf
P6SMB39CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHM3/I p6smb.pdf
P6SMB39CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SL04-E3-18 sl04.pdf
SL04-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SL04-E3-18 sl04.pdf
SL04-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.1A DO219AB
auf Bestellung 8168 Stücke:
Lieferzeit 10-14 Tag (e)
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SS3P5-M3/84A ss3p5.pdf
SS3P5-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
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SMC5K17A-M3/I smc5k10a.pdf
SMC5K17A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 27.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC5K17A-M3/I smc5k10a.pdf
SMC5K17A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 27.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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AZ23C5V1-E3-18 az23_series.pdf
AZ23C5V1-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 5.1V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Produkt ist nicht verfügbar
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AZ23C5V1-E3-18 az23_series.pdf
AZ23C5V1-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 5.1V SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
auf Bestellung 5381 Stücke:
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36+0.6 EUR
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100+0.37 EUR
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AZ23C5V1-E3-08 az23_series.pdf
AZ23C5V1-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 5.1V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
auf Bestellung 174000 Stücke:
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3000+0.23 EUR
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AZ23C5V1-E3-08 az23_series.pdf
AZ23C5V1-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 5.1V SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
auf Bestellung 175501 Stücke:
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21+1.02 EUR
34+0.63 EUR
50+0.45 EUR
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BZD27B16P-HE3-08 bzd27bseries.pdf
BZD27B16P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 800MW DO219AB
Produkt ist nicht verfügbar
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BYVF32-200-E3/45 byv32.pdf
BYVF32-200-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1567 Stücke:
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7+3.09 EUR
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MMSZ5237C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5237C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
auf Bestellung 6000 Stücke:
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3000+0.1 EUR
6000+0.096 EUR
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MMSZ5237C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5237C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
auf Bestellung 11518 Stücke:
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34+0.63 EUR
50+0.43 EUR
102+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
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BZX84B8V2-E3-08 bzx84_series.pdf
BZX84B8V2-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
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BZX84B8V2-E3-08 bzx84_series.pdf
BZX84B8V2-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
auf Bestellung 136 Stücke:
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42+0.5 EUR
51+0.42 EUR
100+0.23 EUR
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1.5KE130AHE3/51 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE130AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 111VWM 179VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5232B-E3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5232B-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Produkt ist nicht verfügbar
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MMSZ5232B-E3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5232B-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 6921 Stücke:
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25+0.83 EUR
41+0.51 EUR
57+0.37 EUR
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VBUS054DD-HF4-GS08 vbus054d.pdf
VBUS054DD-HF4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 19VC LLP1010-5L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-5L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 57W
Power Line Protection: No
Produkt ist nicht verfügbar
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VBUS054DD-HF4-GS08 vbus054d.pdf
VBUS054DD-HF4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 19VC LLP1010-5L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-5L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 57W
Power Line Protection: No
auf Bestellung 13711 Stücke:
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22+0.99 EUR
26+0.81 EUR
100+0.55 EUR
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VBUS05M2-HT5HG3-08 vbus05m2-ht5.pdf
VBUS05M2-HT5HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 27VC DFN1110-3A
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1110-3A
Bidirectional Channels: 2
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VBUS05M2-HT5HG3-08 vbus05m2-ht5.pdf
VBUS05M2-HT5HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 27VC DFN1110-3A
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1110-3A
Bidirectional Channels: 2
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3990 Stücke:
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30+0.71 EUR
46+0.46 EUR
100+0.25 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.18 EUR
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VBUS05M2-HT5-G3-08 vbus05m2-ht5.pdf
VBUS05M2-HT5-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 27VC DFN1110-3A
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1110-3A
Bidirectional Channels: 2
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VBUS05M2-HT5-G3-08 vbus05m2-ht5.pdf
VBUS05M2-HT5-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 27VC DFN1110-3A
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1110-3A
Bidirectional Channels: 2
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 9568 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
61+0.35 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.17 EUR
2000+0.14 EUR
5000+0.13 EUR
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