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BZG03C16-HM3-18 BZG03C16-HM3-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Grade: Automotive
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.63%
Packaging: Tape & Reel (TR)
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BZG03C160TR BZG03C160TR Vishay General Semiconductor - Diodes Division BZG03C_Series.pdf Description: DIODE ZENER 160V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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BZG03C160TR BZG03C160TR Vishay General Semiconductor - Diodes Division BZG03C_Series.pdf Description: DIODE ZENER 160V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BZG03C16TR BZG03C16TR Vishay General Semiconductor - Diodes Division BZG03C_Series.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
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BZG03C16TR BZG03C16TR Vishay General Semiconductor - Diodes Division BZG03C_Series.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
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P6SMB180CAHE3_A/H P6SMB180CAHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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P6SMB180CAHM3_A/H P6SMB180CAHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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P6SMB180CAHE3_A/I P6SMB180CAHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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P6SMB180CAHM3_A/I P6SMB180CAHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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P6SMB180CAHM3/H P6SMB180CAHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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P6SMB180CAHM3/I P6SMB180CAHM3/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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VS-150K40A VS-150K40A Vishay General Semiconductor - Diodes Division 45L,R,%20150K,KS,R%20Series.pdf Description: DIODE STANDARD 400V 150A DO205AA
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 200°C
Supplier Device Package: DO-205AA (DO-8)
Current - Average Rectified (Io): 150A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Packaging: Bulk
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1N3613GP-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
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1N3613GP-M3/54 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
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SMBJ18CD-M3/I SMBJ18CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 18VWM 28.8VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.3V
Voltage - Clamping (Max) @ Ipp: 28.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ18CD-M3/I SMBJ18CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 18VWM 28.8VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.3V
Voltage - Clamping (Max) @ Ipp: 28.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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VS-35APF06LHM3 VS-35APF06LHM3 Vishay General Semiconductor - Diodes Division vs-35epf06lhm3_vs-35apf06lhm3.pdf Description: DIODE STANDARD 600V 35A TO247AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 35A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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VS-35EPF06LHM3 VS-35EPF06LHM3 Vishay General Semiconductor - Diodes Division vs-35epf06lhm3_vs-35apf06lhm3.pdf Description: DIODES - TO-247-E3
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VTVS14ASMF-M3-08 VTVS14ASMF-M3-08 Vishay General Semiconductor - Diodes Division tf-vtvs14asmf-m3-08.pdf Description: TVS DIODE 13.8VWM 22.2V DO219AB
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 13.8V
Current - Peak Pulse (10/1000µs): 17.16A
Capacitance @ Frequency: 752pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.2V
Voltage - Breakdown (Min): 15.4V
Unidirectional Channels: 1
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ZMY5V1-GS08 ZMY5V1-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 5.1V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 700 mV
Qualification: AEC-Q101
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ZMY5V1-GS08 ZMY5V1-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 5.1V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 700 mV
Qualification: AEC-Q101
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PLZ5V1B-HG3_A/H PLZ5V1B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 5.07V 960MW DO219AC
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 5.07 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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PLZ5V1B-HG3_A/H PLZ5V1B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 5.07V 960MW DO219AC
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 5.07 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±2.56%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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VS-20MQ100NTRPBF VS-20MQ100NTRPBF Vishay General Semiconductor - Diodes Division vs-20mq100ntrpbf.pdf Description: DIODE SCHOTTKY 100V 2.1A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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VS-20MQ100NTRPBF VS-20MQ100NTRPBF Vishay General Semiconductor - Diodes Division vs-20mq100ntrpbf.pdf Description: DIODE SCHOTTKY 100V 2.1A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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V40100KHM3/4W V40100KHM3/4W Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOT 100V 20A TO220-3
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
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SL04-HM3-18 SL04-HM3-18 Vishay General Semiconductor - Diodes Division sl04-m.pdf Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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SL04-HM3-18 SL04-HM3-18 Vishay General Semiconductor - Diodes Division sl04-m.pdf Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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VTVS3V3GSMF-M3-18 VTVS3V3GSMF-M3-18 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 3.3VWM 8.9VC DO219AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.57V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 43.99A
Capacitance @ Frequency: 2095pF @ 1MHz
Applications: General Purpose
Operating Temperature: 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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VTVS3V3GSMF-M3-18 VTVS3V3GSMF-M3-18 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 3.3VWM 8.9VC DO219AB
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.57V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 43.99A
Capacitance @ Frequency: 2095pF @ 1MHz
Applications: General Purpose
Operating Temperature: 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
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BZD27C8V2P-M3-18 BZD27C8V2P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 8.2V 800MW DO219AB
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BZD27C8V2P-M3-18 BZD27C8V2P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 8.2V 800MW DO219AB
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BZD27C43P-M3-18 BZD27C43P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 43V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27C43P-M3-18 BZD27C43P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 43V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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BZD27C110P-M3-18 BZD27C110P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 110V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 110 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZD27C110P-M3-18 BZD27C110P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 110V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
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V20PW45CHM3/I V20PW45CHM3/I Vishay General Semiconductor - Diodes Division v20pw45c.pdf Description: DIODE ARR SCHOT 45V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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V20PW45CHM3/I V20PW45CHM3/I Vishay General Semiconductor - Diodes Division v20pw45c.pdf Description: DIODE ARR SCHOT 45V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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SE80PWG-M3/I Vishay General Semiconductor - Diodes Division se80pwbdgj.pdf Description: DIODE GEN PURP 400V 8A SLIMDPAK
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SE80PWDHM3/I Vishay General Semiconductor - Diodes Division se80pwbdgj.pdf Description: DIODE GEN PURP 200V 8A SLIMDPAK
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TPSMC39AHE3_B/I Vishay General Semiconductor - Diodes Division tpsmc.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BU25H06-E3/A BU25H06-E3/A Vishay General Semiconductor - Diodes Division bu25h06.pdf Description: BRIDGE RECT 1P 600V 3.5A BU
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BAV70-E3-18 BAV70-E3-18 Vishay General Semiconductor - Diodes Division bav70.pdf Description: DIODE ARRAY GP 70V 125MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
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BAV70-E3-18 BAV70-E3-18 Vishay General Semiconductor - Diodes Division bav70.pdf Description: DIODE ARRAY GP 70V 125MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
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TMPG06-16AHE3_A/C TMPG06-16AHE3_A/C Vishay General Semiconductor - Diodes Division tmpg06.pdf Description: TVS DIODE 13.6VWM 22.5VC MPG06
Produkt ist nicht verfügbar
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VS-2EQH02HM3/H VS-2EQH02HM3/H Vishay General Semiconductor - Diodes Division vs-2eqh02hm3.pdf Description: DIODE GEN PURP 200V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 200V
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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VS-2EQH02HM3/H VS-2EQH02HM3/H Vishay General Semiconductor - Diodes Division vs-2eqh02hm3.pdf Description: DIODE GEN PURP 200V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 200V
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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TZMB30-GS08 TZMB30-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 30V 500MW SOD80
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
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TZMB30-GS08 TZMB30-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 30V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
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BZT52B30-E3-08 BZT52B30-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 30V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 22.5 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT52B30-E3-08 BZT52B30-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 30V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 22.5 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
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BZT52C20-E3-08 BZT52C20-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 20V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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BZT52C20-E3-08 BZT52C20-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 20V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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PLZ18A-HG3_A/H PLZ18A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16.64V 500MW DO219AC
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27+0.8 EUR
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V10P10HM3_A/H V10P10HM3_A/H Vishay General Semiconductor - Diodes Division v10p10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V10P10HM3_A/H V10P10HM3_A/H Vishay General Semiconductor - Diodes Division v10p10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
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SMAJ7.0CAHE3_A/H SMAJ7.0CAHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 7VWM 12VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ7.0CAHE3_A/I SMAJ7.0CAHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 7VWM 12VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-E5PH6006L-N3 VS-E5PH6006L-N3 Vishay General Semiconductor - Diodes Division vs-e5ph6006l-n3.pdf Description: DIODE STANDARD 600V 60A TO247AD
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 54 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar
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BZX884B6V8L-HG3-08 BZX884B6V8L-HG3-08 Vishay General Semiconductor - Diodes Division bzx884l-series.pdf Description: DIODE ZENER 6.8V 300MW DFN1006
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: DFN1006-2A
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
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BZG03C16-HM3-18 bzg03c-m-series.pdf
BZG03C16-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 1.25W DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Grade: Automotive
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.63%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZG03C160TR BZG03C_Series.pdf
BZG03C160TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZG03C160TR BZG03C_Series.pdf
BZG03C160TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BZG03C16TR BZG03C_Series.pdf
BZG03C16TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
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BZG03C16TR BZG03C_Series.pdf
BZG03C16TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Produkt ist nicht verfügbar
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P6SMB180CAHE3_A/H p6smb.pdf
P6SMB180CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC DO214AA
Produkt ist nicht verfügbar
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P6SMB180CAHM3_A/H p6smb.pdf
P6SMB180CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC DO214AA
Produkt ist nicht verfügbar
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P6SMB180CAHE3_A/I p6smb.pdf
P6SMB180CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC DO214AA
Produkt ist nicht verfügbar
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P6SMB180CAHM3_A/I p6smb.pdf
P6SMB180CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC DO214AA
Produkt ist nicht verfügbar
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P6SMB180CAHM3/H p6smb.pdf
P6SMB180CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC DO214AA
Produkt ist nicht verfügbar
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P6SMB180CAHM3/I p6smb.pdf
P6SMB180CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC DO214AA
Produkt ist nicht verfügbar
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VS-150K40A 45L,R,%20150K,KS,R%20Series.pdf
VS-150K40A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 150A DO205AA
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 200°C
Supplier Device Package: DO-205AA (DO-8)
Current - Average Rectified (Io): 150A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Packaging: Bulk
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1N3613GP-M3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Produkt ist nicht verfügbar
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1N3613GP-M3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Produkt ist nicht verfügbar
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SMBJ18CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ18CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 28.8VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.3V
Voltage - Clamping (Max) @ Ipp: 28.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMBJ18CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ18CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 28.8VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.3V
Voltage - Clamping (Max) @ Ipp: 28.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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15+1.43 EUR
24+0.88 EUR
50+0.64 EUR
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VS-35APF06LHM3 vs-35epf06lhm3_vs-35apf06lhm3.pdf
VS-35APF06LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 35A TO247AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 35A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 487 Stücke:
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3+8.73 EUR
25+5 EUR
100+4.11 EUR
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VS-35EPF06LHM3 vs-35epf06lhm3_vs-35apf06lhm3.pdf
VS-35EPF06LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODES - TO-247-E3
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VTVS14ASMF-M3-08 tf-vtvs14asmf-m3-08.pdf
VTVS14ASMF-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.8VWM 22.2V DO219AB
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 13.8V
Current - Peak Pulse (10/1000µs): 17.16A
Capacitance @ Frequency: 752pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.2V
Voltage - Breakdown (Min): 15.4V
Unidirectional Channels: 1
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14+1.51 EUR
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ZMY5V1-GS08 zmy3v9.pdf
ZMY5V1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 700 mV
Qualification: AEC-Q101
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1500+0.27 EUR
3000+0.25 EUR
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ZMY5V1-GS08 zmy3v9.pdf
ZMY5V1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 700 mV
Qualification: AEC-Q101
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26+0.82 EUR
46+0.46 EUR
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PLZ5V1B-HG3_A/H plzseries.pdf
PLZ5V1B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.07V 960MW DO219AC
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 5.07 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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4500+0.12 EUR
13500+0.1 EUR
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PLZ5V1B-HG3_A/H plzseries.pdf
PLZ5V1B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.07V 960MW DO219AC
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 5.07 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±2.56%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 30766 Stücke:
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35+0.61 EUR
56+0.38 EUR
78+0.27 EUR
100+0.24 EUR
500+0.18 EUR
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VS-20MQ100NTRPBF vs-20mq100ntrpbf.pdf
VS-20MQ100NTRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2.1A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-20MQ100NTRPBF vs-20mq100ntrpbf.pdf
VS-20MQ100NTRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2.1A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 2693 Stücke:
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13+1.68 EUR
15+1.46 EUR
100+1.01 EUR
500+0.84 EUR
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V40100KHM3/4W
V40100KHM3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar
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SL04-HM3-18 sl04-m.pdf
SL04-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 80000 Stücke:
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10000+0.12 EUR
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30000+0.11 EUR
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SL04-HM3-18 sl04-m.pdf
SL04-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 87192 Stücke:
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44+0.48 EUR
66+0.32 EUR
105+0.2 EUR
500+0.17 EUR
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VTVS3V3GSMF-M3-18 vtvs3v3asmf.pdf
VTVS3V3GSMF-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 8.9VC DO219AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.57V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 43.99A
Capacitance @ Frequency: 2095pF @ 1MHz
Applications: General Purpose
Operating Temperature: 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 50000 Stücke:
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10000+0.33 EUR
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VTVS3V3GSMF-M3-18 vtvs3v3asmf.pdf
VTVS3V3GSMF-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 8.9VC DO219AB
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.57V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 43.99A
Capacitance @ Frequency: 2095pF @ 1MHz
Applications: General Purpose
Operating Temperature: 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
auf Bestellung 56226 Stücke:
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13+1.74 EUR
20+1.09 EUR
100+0.71 EUR
500+0.55 EUR
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2000+0.44 EUR
5000+0.39 EUR
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BZD27C8V2P-M3-18 BZD27-M_Series.pdf
BZD27C8V2P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27C8V2P-M3-18 BZD27-M_Series.pdf
BZD27C8V2P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 800MW DO219AB
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BZD27C43P-M3-18 BZD27-M_Series.pdf
BZD27C43P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZD27C43P-M3-18 BZD27-M_Series.pdf
BZD27C43P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZD27C110P-M3-18 BZD27-M_Series.pdf
BZD27C110P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 110V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 110 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZD27C110P-M3-18 BZD27-M_Series.pdf
BZD27C110P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 110V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
auf Bestellung 6480 Stücke:
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15+1.49 EUR
23+0.92 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.4 EUR
2000+0.37 EUR
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V20PW45CHM3/I v20pw45c.pdf
V20PW45CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20PW45CHM3/I v20pw45c.pdf
V20PW45CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE80PWG-M3/I se80pwbdgj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A SLIMDPAK
Produkt ist nicht verfügbar
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SE80PWDHM3/I se80pwbdgj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A SLIMDPAK
Produkt ist nicht verfügbar
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TPSMC39AHE3_B/I tpsmc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BU25H06-E3/A bu25h06.pdf
BU25H06-E3/A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU
auf Bestellung 882 Stücke:
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BAV70-E3-18 bav70.pdf
BAV70-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 125MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
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BAV70-E3-18 bav70.pdf
BAV70-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 125MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
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50+0.43 EUR
69+0.31 EUR
100+0.26 EUR
500+0.2 EUR
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TMPG06-16AHE3_A/C tmpg06.pdf
TMPG06-16AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.6VWM 22.5VC MPG06
Produkt ist nicht verfügbar
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VS-2EQH02HM3/H vs-2eqh02hm3.pdf
VS-2EQH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 200V
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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4500+0.14 EUR
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VS-2EQH02HM3/H vs-2eqh02hm3.pdf
VS-2EQH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 200V
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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27+0.8 EUR
38+0.56 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.17 EUR
2000+0.14 EUR
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TZMB30-GS08 tzm.pdf
TZMB30-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
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TZMB30-GS08 tzm.pdf
TZMB30-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
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63+0.33 EUR
91+0.24 EUR
184+0.11 EUR
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BZT52B30-E3-08 bzt52_series.pdf
BZT52B30-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 22.5 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT52B30-E3-08 bzt52_series.pdf
BZT52B30-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 22.5 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
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38+0.57 EUR
55+0.38 EUR
128+0.17 EUR
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BZT52C20-E3-08 bzt52.pdf
BZT52C20-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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3000+0.18 EUR
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BZT52C20-E3-08 bzt52.pdf
BZT52C20-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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26+0.82 EUR
42+0.51 EUR
58+0.37 EUR
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PLZ18A-HG3_A/H plzseries.pdf
PLZ18A-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16.64V 500MW DO219AC
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27+0.8 EUR
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V10P10HM3_A/H v10p10.pdf
V10P10HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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1500+0.89 EUR
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V10P10HM3_A/H v10p10.pdf
V10P10HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
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100+1.3 EUR
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SMAJ7.0CAHE3_A/H smaj50a.pdf
SMAJ7.0CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ7.0CAHE3_A/I smaj50a.pdf
SMAJ7.0CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-E5PH6006L-N3 vs-e5ph6006l-n3.pdf
VS-E5PH6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 60A TO247AD
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 54 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar
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BZX884B6V8L-HG3-08 bzx884l-series.pdf
BZX884B6V8L-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 300MW DFN1006
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: DFN1006-2A
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
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