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1N6285AHE3_B/C 1N6285AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
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1N6285AHE3_A/D 1N6285AHE3_A/D Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Power Line Protection: No
Produkt ist nicht verfügbar
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1N6285AHE3_A/C 1N6285AHE3_A/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
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1N6285AHE3/51 1N6285AHE3/51 Vishay General Semiconductor - Diodes Division 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5222B-TAP 1N5222B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.5V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 2.5 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
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150+0.14 EUR
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500+0.065 EUR
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1N5222B-TAP 1N5222B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.5V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 2.5 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
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VS-1N1184 VS-1N1184 Vishay General Semiconductor - Diodes Division vs-1n1183series.pdf Description: DIODE GEN PURP 100V 35A DO203AB
Current - Reverse Leakage @ Vr: 10 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
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VS-1N1184A VS-1N1184A Vishay General Semiconductor - Diodes Division vs-1n1183series.pdf Description: DIODE STANDARD 100V 40A DO203AB
Current - Reverse Leakage @ Vr: 2.5 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 126 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 40A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
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BZX584C5V6-G3-08 BZX584C5V6-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZX584C5V6-G3-08 BZX584C5V6-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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P6SMB6.8AHM3_B/H P6SMB6.8AHM3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
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P6SMB6.8AHE3_B/I P6SMB6.8AHE3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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P6SMB6.8AHM3_B/I P6SMB6.8AHM3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB6.8AHE3_B/H P6SMB6.8AHE3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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SMCJ36CAHM3_A/I SMCJ36CAHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ36CAHE3_A/I SMCJ36CAHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C11-HE3_A-08 BZT52C11-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 11V 300MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.5 V
Power - Max: 300 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C11-HE3_A-18 BZT52C11-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 11V 300MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.5 V
Power - Max: 300 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5267B-HE3_A-18 MMSZ5267B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5267B-HE3_A-08 MMSZ5267B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5267C-HE3_A-18 MMSZ5267C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5267C-HE3_A-08 MMSZ5267C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-8CSH01HM3/86A VS-8CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-8csh01hm3.pdf Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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VS-8CSH01HM3/86A VS-8CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-8csh01hm3.pdf Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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VS-4ESH01-M3/87A VS-4ESH01-M3/87A Vishay General Semiconductor - Diodes Division vs-4esh01-m3.pdf Description: DIODE STANDARD 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Produkt ist nicht verfügbar
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VS-4ESH01-M3/87A VS-4ESH01-M3/87A Vishay General Semiconductor - Diodes Division vs-4esh01-m3.pdf Description: DIODE STANDARD 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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10+2.14 EUR
16+1.33 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.61 EUR
2000+0.56 EUR
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VS-6ESH01HM3/87A VS-6ESH01HM3/87A Vishay General Semiconductor - Diodes Division vs-6esh01hm3.pdf Description: DIODE STANDARD 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-6ESH01HM3/87A VS-6ESH01HM3/87A Vishay General Semiconductor - Diodes Division vs-6esh01hm3.pdf Description: DIODE STANDARD 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V15PM6-M3/I Vishay General Semiconductor - Diodes Division v15pm6.pdf Description: DIODE SCHOTTKY 60V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
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V15PM6HM3/I Vishay General Semiconductor - Diodes Division v15pm6.pdf Description: DIODE SCHOTTKY 60V 15A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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BZT52C15-HE3_A-18 BZT52C15-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 15V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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BZT52C15-HE3_A-08 BZT52C15-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 15V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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VSSA36S-M3/61T VSSA36S-M3/61T Vishay General Semiconductor - Diodes Division vssa36s-m3.pdf Description: DIODE SCHOTTKY 60V 2.4A DO214AC
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 245pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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P4KE47CAHE3/54 P4KE47CAHE3/54 Vishay General Semiconductor - Diodes Division p4ke.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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P4KE47CAHE3/54 P4KE47CAHE3/54 Vishay General Semiconductor - Diodes Division p4ke.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMSZ5232B-HE3_A-18 MMSZ5232B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5232B-HE3_A-08 MMSZ5232B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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EGF1D-E3/5CA EGF1D-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGF1D-E3/5CA EGF1D-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
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BYW72-TAP BYW72-TAP Vishay General Semiconductor - Diodes Division byw72.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Cut Tape (CT)
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BYW72-TAP BYW72-TAP Vishay General Semiconductor - Diodes Division byw72.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
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RGP30D-E3/73 RGP30D-E3/73 Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RGP30D-E3/73 RGP30D-E3/73 Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RGP30B-E3/73 RGP30B-E3/73 Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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RGP30B-E3/73 RGP30B-E3/73 Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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SM6T24AHE3_B/I SM6T24AHE3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SM6T24AHE3_B/H SM6T24AHE3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SM6T24AHM3_B/I SM6T24AHM3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SM6T24AHM3_B/H SM6T24AHM3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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VS-MURD620CTHM3 VS-MURD620CTHM3 Vishay General Semiconductor - Diodes Division vs-murd620c.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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VS-MURD620CTTRR-M3 VS-MURD620CTTRR-M3 Vishay General Semiconductor - Diodes Division vs-murd620c.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MURD620CT MURD620CT Vishay General Semiconductor - Diodes Division murd620ct.pdf Description: DIODE ARRAY GP 200V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SML4750-E3/61 SML4750-E3/61 Vishay General Semiconductor - Diodes Division SML4728-SML4764A.pdf Description: DIODE ZENER 27V 1W DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
Power - Max: 1 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±10%
Packaging: Tape & Reel (TR)
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SML4750-E3/61 SML4750-E3/61 Vishay General Semiconductor - Diodes Division SML4728-SML4764A.pdf Description: DIODE ZENER 27V 1W DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
Power - Max: 1 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±10%
Packaging: Cut Tape (CT)
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MBRF1045HE3_A/P MBRF1045HE3_A/P Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MMSZ5248C-HE3_A-18 MMSZ5248C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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MMSZ5248C-HE3_A-08 MMSZ5248C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-10TQ035STRLHM3 VS-10TQ035STRLHM3 Vishay General Semiconductor - Diodes Division vs-10tq035shm3.pdf Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Qualification: AEC-Q101
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VS-10TQ035STRRHM3 VS-10TQ035STRRHM3 Vishay General Semiconductor - Diodes Division vs-10tq035shm3.pdf Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
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SMCJ12CAHM3_A/I SMCJ12CAHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 75.4A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6285AHE3_B/C 15ke.pdf
1N6285AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N6285AHE3_A/D 15ke.pdf
1N6285AHE3_A/D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Power Line Protection: No
Produkt ist nicht verfügbar
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1N6285AHE3_A/C 15ke.pdf
1N6285AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N6285AHE3/51 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf
1N6285AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5222B-TAP 1n5221.pdf
1N5222B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 2.5 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
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100+0.21 EUR
150+0.14 EUR
305+0.069 EUR
500+0.065 EUR
1000+0.063 EUR
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1N5222B-TAP 1n5221.pdf
1N5222B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 2.5 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
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10000+0.055 EUR
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VS-1N1184 vs-1n1183series.pdf
VS-1N1184
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 35A DO203AB
Current - Reverse Leakage @ Vr: 10 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
auf Bestellung 86 Stücke:
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2+20.73 EUR
10+14.95 EUR
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VS-1N1184A vs-1n1183series.pdf
VS-1N1184A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 40A DO203AB
Current - Reverse Leakage @ Vr: 2.5 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 126 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 40A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
auf Bestellung 254 Stücke:
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10+15.8 EUR
100+13.07 EUR
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BZX584C5V6-G3-08 bzx584c-series.pdf
BZX584C5V6-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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8000+0.11 EUR
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BZX584C5V6-G3-08 bzx584c-series.pdf
BZX584C5V6-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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36+0.58 EUR
58+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
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P6SMB6.8AHM3_B/H p6smb.pdf
P6SMB6.8AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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P6SMB6.8AHE3_B/I p6smb.pdf
P6SMB6.8AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB6.8AHM3_B/I p6smb.pdf
P6SMB6.8AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB6.8AHE3_B/H p6smb.pdf
P6SMB6.8AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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SMCJ36CAHM3_A/I smcj.pdf
SMCJ36CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ36CAHE3_A/I smcj.pdf
SMCJ36CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C11-HE3_A-08 bzt52.pdf
BZT52C11-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.5 V
Power - Max: 300 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C11-HE3_A-18 bzt52.pdf
BZT52C11-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.5 V
Power - Max: 300 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5267B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5267B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5267B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5267B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5267C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5267C-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5267C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5267C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-8CSH01HM3/86A vs-8csh01hm3.pdf
VS-8CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
1500+0.96 EUR
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VS-8CSH01HM3/86A vs-8csh01hm3.pdf
VS-8CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2599 Stücke:
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7+3.31 EUR
10+2.11 EUR
100+1.4 EUR
500+1.11 EUR
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VS-4ESH01-M3/87A vs-4esh01-m3.pdf
VS-4ESH01-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Produkt ist nicht verfügbar
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VS-4ESH01-M3/87A vs-4esh01-m3.pdf
VS-4ESH01-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 6030 Stücke:
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10+2.14 EUR
16+1.33 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.61 EUR
2000+0.56 EUR
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VS-6ESH01HM3/87A vs-6esh01hm3.pdf
VS-6ESH01HM3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-6ESH01HM3/87A vs-6esh01hm3.pdf
VS-6ESH01HM3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5060 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.73 EUR
13+1.71 EUR
100+1.14 EUR
500+0.89 EUR
1000+0.81 EUR
2000+0.74 EUR
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V15PM6-M3/I v15pm6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Produkt ist nicht verfügbar
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V15PM6HM3/I v15pm6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BZT52C15-HE3_A-18 bzt52.pdf
BZT52C15-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C15-HE3_A-08 bzt52.pdf
BZT52C15-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VSSA36S-M3/61T vssa36s-m3.pdf
VSSA36S-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO214AC
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 245pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 8550 Stücke:
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31+0.69 EUR
46+0.46 EUR
100+0.31 EUR
500+0.24 EUR
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P4KE47CAHE3/54 p4ke.pdf
P4KE47CAHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P4KE47CAHE3/54 p4ke.pdf
P4KE47CAHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMSZ5232B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5232B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5232B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5232B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
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EGF1D-E3/5CA egf1a.pdf
EGF1D-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGF1D-E3/5CA egf1a.pdf
EGF1D-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
auf Bestellung 5370 Stücke:
Lieferzeit 10-14 Tag (e)
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14+1.51 EUR
22+0.96 EUR
100+0.76 EUR
500+0.6 EUR
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2000+0.49 EUR
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BYW72-TAP byw72.pdf
BYW72-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Cut Tape (CT)
auf Bestellung 2095 Stücke:
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9+2.48 EUR
13+1.65 EUR
100+1.26 EUR
500+1.04 EUR
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BYW72-TAP byw72.pdf
BYW72-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
auf Bestellung 10000 Stücke:
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2500+0.79 EUR
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RGP30D-E3/73 rgp30a.pdf
RGP30D-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1011 Stücke:
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8+2.98 EUR
11+1.99 EUR
100+1.5 EUR
500+1.19 EUR
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RGP30D-E3/73 rgp30a.pdf
RGP30D-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGP30B-E3/73 rgp30a.pdf
RGP30B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 932 Stücke:
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AnzahlPrivatkunde
8+2.83 EUR
11+1.9 EUR
100+1.5 EUR
500+1.19 EUR
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RGP30B-E3/73 rgp30a.pdf
RGP30B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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SM6T24AHE3_B/I sm6t.pdf
SM6T24AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SM6T24AHE3_B/H sm6t.pdf
SM6T24AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SM6T24AHM3_B/I sm6t.pdf
SM6T24AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SM6T24AHM3_B/H sm6t.pdf
SM6T24AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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VS-MURD620CTHM3 vs-murd620c.pdf
VS-MURD620CTHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4510 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.05 EUR
75+1.87 EUR
150+1.64 EUR
525+1.56 EUR
1050+1.52 EUR
2025+1.45 EUR
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VS-MURD620CTTRR-M3 vs-murd620c.pdf
VS-MURD620CTTRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 8299 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
14+1.51 EUR
100+1 EUR
500+0.77 EUR
1000+0.7 EUR
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MURD620CT murd620ct.pdf
MURD620CT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SML4750-E3/61 SML4728-SML4764A.pdf
SML4750-E3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1W DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
Power - Max: 1 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SML4750-E3/61 SML4728-SML4764A.pdf
SML4750-E3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1W DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
Power - Max: 1 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±10%
Packaging: Cut Tape (CT)
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
29+0.74 EUR
100+0.51 EUR
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MBRF1045HE3_A/P mbr10xx.pdf
MBRF1045HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MMSZ5248C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5248C-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5248C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5248C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-10TQ035STRLHM3 vs-10tq035shm3.pdf
VS-10TQ035STRLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-10TQ035STRRHM3 vs-10tq035shm3.pdf
VS-10TQ035STRRHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ12CAHM3_A/I smcj.pdf
SMCJ12CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 75.4A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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