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V12P15-M3/H V12P15-M3/H Vishay General Semiconductor - Diodes Division v12p15.pdf Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
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V12PM12HM3_A/H V12PM12HM3_A/H Vishay General Semiconductor - Diodes Division v12pm12.pdf Description: DIODE SCHOTTKY 120V 4.1A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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V12PM12HM3_A/H V12PM12HM3_A/H Vishay General Semiconductor - Diodes Division v12pm12.pdf Description: DIODE SCHOTTKY 120V 4.1A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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V12PM10HM3/H V12PM10HM3/H Vishay General Semiconductor - Diodes Division v12pm10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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V12PM10HM3/H V12PM10HM3/H Vishay General Semiconductor - Diodes Division v12pm10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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V12P45HM3_A/H V12P45HM3_A/H Vishay General Semiconductor - Diodes Division v12p45.pdf Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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V12P45HM3_A/H V12P45HM3_A/H Vishay General Semiconductor - Diodes Division v12p45.pdf Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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V12PM10-M3/H V12PM10-M3/H Vishay General Semiconductor - Diodes Division v12pm10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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V12PM10-M3/H V12PM10-M3/H Vishay General Semiconductor - Diodes Division v12pm10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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V12P8HM3_A/H V12P8HM3_A/H Vishay General Semiconductor - Diodes Division v12p8.pdf Description: DIODE SCHOTTKY 80V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Qualification: AEC-Q101
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V12P8HM3_A/H V12P8HM3_A/H Vishay General Semiconductor - Diodes Division v12p8.pdf Description: DIODE SCHOTTKY 80V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Qualification: AEC-Q101
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V12P6HM3_A/H V12P6HM3_A/H Vishay General Semiconductor - Diodes Division v12p6.pdf Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Qualification: AEC-Q101
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V12P6HM3_A/H V12P6HM3_A/H Vishay General Semiconductor - Diodes Division v12p6.pdf Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Qualification: AEC-Q101
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VS-ST110S16P2PBF VS-ST110S16P2PBF Vishay General Semiconductor - Diodes Division vs-st110spbfseries.pdf Description: SCR 1.6KV 175A TO209AC
Packaging: Bulk
Package / Case: TO-209AC, TO-94-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2700A, 2830A
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.52 V
Current - Off State (Max): 20 mA
Supplier Device Package: TO-209AC (TO-94)
Current - On State (It (RMS)) (Max): 175 A
Voltage - Off State: 1.6 kV
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43CTQ100 Vishay General Semiconductor - Diodes Division 43CTQ80(100)(S)(-1)%20N0701%20REV.A.pdf Description: DIODE ARR SCHOT 100V 20A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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43CTQ100S 43CTQ100S Vishay General Semiconductor - Diodes Division 43CTQ%28S%2C-1%29.pdf Description: DIODE ARR SCHOT 100V 20A TO263AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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Z4KE200A-E3/73 Z4KE200A-E3/73 Vishay General Semiconductor - Diodes Division Z4KE100A_thru_200A.pdf Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
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Z4KE200A-E3/73 Z4KE200A-E3/73 Vishay General Semiconductor - Diodes Division Z4KE100A_thru_200A.pdf Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
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SSB43L-M3/52T SSB43L-M3/52T Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SSB43L-M3/52T SSB43L-M3/52T Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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SSB43LHE3_A/H SSB43LHE3_A/H Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SSB43LHE3_A/H SSB43LHE3_A/H Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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SSB43LHE3_A/I SSB43LHE3_A/I Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SSB43LHE3_A/I SSB43LHE3_A/I Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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SE30PAJ-M3/I SE30PAJ-M3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE30PAJ-M3/I SE30PAJ-M3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 27914 Stücke:
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41+0.51 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.24 EUR
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SE30PABHM3/I SE30PABHM3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE30PABHM3/I SE30PABHM3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 9268 Stücke:
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28+0.77 EUR
41+0.51 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.23 EUR
5000+0.2 EUR
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SE30PAJHM3/I SE30PAJHM3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 14000 Stücke
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SE30PAJHM3/I SE30PAJHM3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 12385 Stücke:
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28+0.77 EUR
41+0.51 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.23 EUR
5000+0.2 EUR
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SE50PAJ-M3/I SE50PAJ-M3/I Vishay General Semiconductor - Diodes Division se50pab.pdf Description: DIODE STANDARD 600V 5A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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SE50PAJ-M3/I SE50PAJ-M3/I Vishay General Semiconductor - Diodes Division se50pab.pdf Description: DIODE STANDARD 600V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 11990 Stücke:
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16+1.36 EUR
25+0.84 EUR
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500+0.42 EUR
1000+0.38 EUR
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5000+0.3 EUR
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MBRB20H90CT-E3/45 MBRB20H90CT-E3/45 Vishay General Semiconductor - Diodes Division MBR%28F%2CB%2920H90%2C100CT_Rev_7-29-15.pdf Description: DIODE ARR SCHOTT 90V 10A TO263AB
Current - Reverse Leakage @ Vr: 4.5 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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SMCJ51CAHE3_A/H SMCJ51CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
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SMCJ51CAHE3_A/H SMCJ51CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2965 Stücke:
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SS6P4C-M3/86A SS6P4C-M3/86A Vishay General Semiconductor - Diodes Division ss6p4c.pdf Description: DIODE ARRAY SCHOTT 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3000 Stücke:
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SS6P4C-M3/86A SS6P4C-M3/86A Vishay General Semiconductor - Diodes Division ss6p4c.pdf Description: DIODE ARRAY SCHOTT 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3855 Stücke:
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SMA6F51A-M3/H SMA6F51A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,51V 5%,UNIDIR,SLIM SMA TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 82.2V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-221AC (SlimSMA)
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 7.3A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMA6F51A-M3/H SMA6F51A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,51V 5%,UNIDIR,SLIM SMA TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 82.2V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-221AC (SlimSMA)
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 7.3A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 5132 Stücke:
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SM5S22CAHM3/I SM5S22CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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750+2.45 EUR
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SM5S22CAHM3/I SM5S22CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
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SM5S15CAHM3/I SM5S15CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 148A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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750+2.45 EUR
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SM5S15CAHM3/I SM5S15CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 148A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
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SM5S36CAHM3/I SM5S36CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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750+2.36 EUR
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SM5S36CAHM3/I SM5S36CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
4+5.59 EUR
10+4.05 EUR
100+2.95 EUR
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SM5S30CAHM3/I SM5S30CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 74.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.45 EUR
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SM5S30CAHM3/I SM5S30CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 74.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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SM5S14CAHM3/I SM5S14CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.45 EUR
Mindestbestellmenge: 750 Stücke
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SM5S14CAHM3/I SM5S14CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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SM5S16CAHM3/I SM5S16CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 138A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.45 EUR
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SM5S16CAHM3/I SM5S16CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 138A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S51CAHM3/I SM5S51CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.7A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S51CAHM3/I SM5S51CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.7A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S13CAHM3/I SM5S13CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 167A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S13CAHM3/I SM5S13CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 167A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MURS260-M3/52T MURS260-M3/52T Vishay General Semiconductor - Diodes Division murs240.pdf Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS260-M3/52T MURS260-M3/52T Vishay General Semiconductor - Diodes Division murs240.pdf Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ZPY27-TR ZPY27-TR Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 27V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Qualification: AEC-Q101
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ZPY27-TR ZPY27-TR Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 27V 1.3W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Qualification: AEC-Q101
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SMAJ150CAHM3/H SMAJ150CAHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 243V
Voltage - Breakdown (Min): 167V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 1.2A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V12P15-M3/H v12p15.pdf
V12P15-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
auf Bestellung 5034 Stücke:
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V12PM12HM3_A/H v12pm12.pdf
V12PM12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 4.1A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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V12PM12HM3_A/H v12pm12.pdf
V12PM12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 4.1A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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V12PM10HM3/H v12pm10.pdf
V12PM10HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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V12PM10HM3/H v12pm10.pdf
V12PM10HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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V12P45HM3_A/H v12p45.pdf
V12P45HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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V12P45HM3_A/H v12p45.pdf
V12P45HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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V12PM10-M3/H v12pm10.pdf
V12PM10-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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V12PM10-M3/H v12pm10.pdf
V12PM10-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 4647 Stücke:
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V12P8HM3_A/H v12p8.pdf
V12P8HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Qualification: AEC-Q101
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V12P8HM3_A/H v12p8.pdf
V12P8HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Qualification: AEC-Q101
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V12P6HM3_A/H v12p6.pdf
V12P6HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Qualification: AEC-Q101
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V12P6HM3_A/H v12p6.pdf
V12P6HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Qualification: AEC-Q101
auf Bestellung 5471 Stücke:
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VS-ST110S16P2PBF vs-st110spbfseries.pdf
VS-ST110S16P2PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 175A TO209AC
Packaging: Bulk
Package / Case: TO-209AC, TO-94-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2700A, 2830A
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.52 V
Current - Off State (Max): 20 mA
Supplier Device Package: TO-209AC (TO-94)
Current - On State (It (RMS)) (Max): 175 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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43CTQ100 43CTQ80(100)(S)(-1)%20N0701%20REV.A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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43CTQ100S 43CTQ%28S%2C-1%29.pdf
43CTQ100S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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Z4KE200A-E3/73 Z4KE100A_thru_200A.pdf
Z4KE200A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
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Z4KE200A-E3/73 Z4KE100A_thru_200A.pdf
Z4KE200A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
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SSB43L-M3/52T ssb43l.pdf
SSB43L-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SSB43L-M3/52T ssb43l.pdf
SSB43L-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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SSB43LHE3_A/H ssb43l.pdf
SSB43LHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SSB43LHE3_A/H ssb43l.pdf
SSB43LHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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SSB43LHE3_A/I ssb43l.pdf
SSB43LHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSB43LHE3_A/I ssb43l.pdf
SSB43LHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 206 Stücke:
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SE30PAJ-M3/I se30pab.pdf
SE30PAJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE30PAJ-M3/I se30pab.pdf
SE30PAJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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28+0.77 EUR
41+0.51 EUR
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SE30PABHM3/I se30pab.pdf
SE30PABHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE30PABHM3/I se30pab.pdf
SE30PABHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 9268 Stücke:
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28+0.77 EUR
41+0.51 EUR
100+0.35 EUR
500+0.27 EUR
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SE30PAJHM3/I se30pab.pdf
SE30PAJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE30PAJHM3/I se30pab.pdf
SE30PAJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 12385 Stücke:
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28+0.77 EUR
41+0.51 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.24 EUR
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5000+0.2 EUR
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SE50PAJ-M3/I se50pab.pdf
SE50PAJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 5A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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SE50PAJ-M3/I se50pab.pdf
SE50PAJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 11990 Stücke:
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MBRB20H90CT-E3/45 MBR%28F%2CB%2920H90%2C100CT_Rev_7-29-15.pdf
MBRB20H90CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 90V 10A TO263AB
Current - Reverse Leakage @ Vr: 4.5 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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SMCJ51CAHE3_A/H smcj.pdf
SMCJ51CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
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850+0.77 EUR
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SMCJ51CAHE3_A/H smcj.pdf
SMCJ51CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2965 Stücke:
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10+2.2 EUR
15+1.49 EUR
100+1.04 EUR
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SS6P4C-M3/86A ss6p4c.pdf
SS6P4C-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3000 Stücke:
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SS6P4C-M3/86A ss6p4c.pdf
SS6P4C-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3855 Stücke:
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SMA6F51A-M3/H sma6f5.pdf
SMA6F51A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%,UNIDIR,SLIM SMA TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 82.2V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-221AC (SlimSMA)
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 7.3A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMA6F51A-M3/H sma6f5.pdf
SMA6F51A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%,UNIDIR,SLIM SMA TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 82.2V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-221AC (SlimSMA)
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 7.3A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 5132 Stücke:
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31+0.69 EUR
46+0.46 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 31 Stücke
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SM5S22CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S22CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+2.45 EUR
Mindestbestellmenge: 750 Stücke
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SM5S22CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S22CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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SM5S15CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S15CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 148A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+2.45 EUR
Mindestbestellmenge: 750 Stücke
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SM5S15CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S15CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 148A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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SM5S36CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S36CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+2.36 EUR
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SM5S36CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S36CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.59 EUR
10+4.05 EUR
100+2.95 EUR
Mindestbestellmenge: 4 Stücke
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SM5S30CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S30CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 74.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+2.45 EUR
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SM5S30CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S30CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 74.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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SM5S14CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S14CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+2.45 EUR
Mindestbestellmenge: 750 Stücke
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SM5S14CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S14CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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SM5S16CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S16CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 138A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+2.45 EUR
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SM5S16CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S16CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 138A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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SM5S51CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S51CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.7A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+2.45 EUR
Mindestbestellmenge: 750 Stücke
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SM5S51CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S51CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.7A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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SM5S13CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S13CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 167A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+2.45 EUR
Mindestbestellmenge: 750 Stücke
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SM5S13CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S13CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 167A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
10+4.2 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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MURS260-M3/52T murs240.pdf
MURS260-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+0.49 EUR
1500+0.45 EUR
2250+0.43 EUR
Mindestbestellmenge: 750 Stücke
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MURS260-M3/52T murs240.pdf
MURS260-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
20+1.06 EUR
100+0.69 EUR
Mindestbestellmenge: 13 Stücke
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ZPY27-TR zpy3v9.pdf
ZPY27-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.11 EUR
10000+0.099 EUR
Mindestbestellmenge: 5000 Stücke
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ZPY27-TR zpy3v9.pdf
ZPY27-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1.3W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Qualification: AEC-Q101
auf Bestellung 14589 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
71+0.3 EUR
107+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 48 Stücke
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SMAJ150CAHM3/H smaj50a.pdf
SMAJ150CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 243VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 243V
Voltage - Breakdown (Min): 167V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 1.2A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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