Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41406) > Seite 652 nach 691

Wählen Sie Seite:   [  << Vorherige Seite ]  1 69 138 207 276 345 414 483 552 621 647 648 649 650 651 652 653 654 655 656 657 690 691  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SS22SHE3_B/H Vishay General Semiconductor - Diodes Division ss22s.pdf Description: DIODE SCHOTTKY 20V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 18000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS22SHE3_B/I Vishay General Semiconductor - Diodes Division ss22s.pdf Description: DIODE SCHOTTKY 20V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
40CPQ080 40CPQ080 Vishay General Semiconductor - Diodes Division 40CPQ80%2C100.pdf Description: DIODE ARR SCHOTT 80V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 80 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C3V6P-M3-08 BZD27C3V6P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.32 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C3V6P-M3-08 BZD27C3V6P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 15629 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.38 EUR
25+0.86 EUR
50+0.63 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UG4A-E3/54 UG4A-E3/54 Vishay General Semiconductor - Diodes Division ug4a.pdf Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
1400+0.45 EUR
Mindestbestellmenge: 1400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UG4A-E3/54 UG4A-E3/54 Vishay General Semiconductor - Diodes Division ug4a.pdf Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 2764 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.19 EUR
21+1.02 EUR
100+0.71 EUR
500+0.55 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMZG3796B-E3/52 Vishay General Semiconductor - Diodes Division smzg.pdf Description: DIODE ZENER 20V 1.5W DO215AA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-215AA (SMBG)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMZG3796B-E3/5B Vishay General Semiconductor - Diodes Division smzg.pdf Description: DIODE ZENER 20V 1.5W DO215AA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-215AA (SMBG)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMZG3796BHE3/5B SMZG3796BHE3/5B Vishay General Semiconductor - Diodes Division smzg.pdf Description: 1.5W,20V 5%,SMB ZENER
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-214AA (SMBG)
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMZG3796BHE3/52 SMZG3796BHE3/52 Vishay General Semiconductor - Diodes Division smzg.pdf Description: 1.5W,20V 5%,SMB ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-12TQ040STRLHM3 VS-12TQ040STRLHM3 Vishay General Semiconductor - Diodes Division vs-12tq035shm3.pdf Description: DIODE SCHOTTKY 40V 15A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-12TQ040STRRHM3 VS-12TQ040STRRHM3 Vishay General Semiconductor - Diodes Division vs-12tq035shm3.pdf Description: DIODE SCHOTTKY 40V 15A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AU1FMHM3/H AU1FMHM3/H Vishay General Semiconductor - Diodes Division au1fd-au1fm.pdf Description: DIODE AVALANCHE 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 21089 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.11 EUR
31+0.69 EUR
50+0.5 EUR
100+0.44 EUR
500+0.33 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AS1FMHM3/H AS1FMHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 12618 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
44+0.48 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.27 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M103HM3/I V7N3M103HM3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M103HM3/I V7N3M103HM3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
23+0.94 EUR
25+0.88 EUR
100+0.73 EUR
250+0.67 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.42 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3103HM3/I V7N3103HM3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3103HM3/I V7N3103HM3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
23+0.94 EUR
25+0.88 EUR
100+0.73 EUR
250+0.67 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.42 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M153HM3/I V7N3M153HM3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M153HM3/I V7N3M153HM3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
23+0.94 EUR
25+0.88 EUR
100+0.73 EUR
250+0.67 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.42 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M63-M3/I V7N3M63-M3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.36 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M63-M3/I V7N3M63-M3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.09 EUR
23+0.93 EUR
25+0.87 EUR
100+0.7 EUR
250+0.64 EUR
500+0.55 EUR
1000+0.43 EUR
2500+0.38 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3L63-M3/I V7N3L63-M3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.36 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3L63-M3/I V7N3L63-M3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.09 EUR
23+0.93 EUR
25+0.87 EUR
100+0.7 EUR
250+0.64 EUR
500+0.55 EUR
1000+0.43 EUR
2500+0.38 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M103-M3/I V7N3M103-M3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.37 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M103-M3/I V7N3M103-M3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.11 EUR
23+0.95 EUR
25+0.88 EUR
100+0.7 EUR
250+0.65 EUR
500+0.56 EUR
1000+0.43 EUR
2500+0.39 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M153-M3/I V7N3M153-M3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.37 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M153-M3/I V7N3M153-M3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.11 EUR
23+0.95 EUR
25+0.88 EUR
100+0.7 EUR
250+0.65 EUR
500+0.56 EUR
1000+0.43 EUR
2500+0.39 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M63HM3/I V7N3M63HM3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.4 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M63HM3/I V7N3M63HM3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.24 EUR
20+1.06 EUR
25+0.99 EUR
100+0.79 EUR
250+0.73 EUR
500+0.62 EUR
1000+0.48 EUR
2500+0.44 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3L63HM3/I V7N3L63HM3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.4 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3L63HM3/I V7N3L63HM3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.24 EUR
20+1.06 EUR
25+0.99 EUR
100+0.79 EUR
250+0.73 EUR
500+0.62 EUR
1000+0.48 EUR
2500+0.44 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3103-M3/I V7N3103-M3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3103-M3/I V7N3103-M3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.7 EUR
20+1.06 EUR
25+0.88 EUR
100+0.69 EUR
250+0.6 EUR
500+0.54 EUR
1000+0.49 EUR
2500+0.43 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ90AHM3_A/H SMCJ90AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ90AHM3_A/I SMCJ90AHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 90VWM 146VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 10.3A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ90AHE3_A/I SMCJ90AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 90VWM 146VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 10.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C7V5P-HE3-08 BZD27C7V5P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 7.5V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C7V5P-HE3-08 BZD27C7V5P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 7.5V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 28383 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
33+0.64 EUR
100+0.44 EUR
500+0.35 EUR
1000+0.3 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RS2JHE3_A/H RS2JHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
750+0.45 EUR
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RS2JHE3_A/H RS2JHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 1561 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
22+0.98 EUR
50+0.71 EUR
100+0.63 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-VSKDF500/06PBF VS-VSKDF500/06PBF Vishay General Semiconductor - Diodes Division vs-vskdf500-06pbf.pdf Description: DIODE MOD GP 600V 772A INTAPAK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 772A (DC)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.66 V @ 500 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ8.5AHM3/I SMBJ8.5AHM3/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8.5VWM 14.4V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 14.4V
Voltage - Breakdown (Min): 9.44V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 8.5V
Current - Peak Pulse (10/1000µs): 41.7A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB11AHM3_B/I P6SMB11AHM3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 38.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 9600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB11AHE3_B/I P6SMB11AHE3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 38.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 9600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB11AHM3_B/H P6SMB11AHM3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 38.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB11AHE3_B/H P6SMB11AHE3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 38.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V20PWM63-M3/I V20PWM63-M3/I Vishay General Semiconductor - Diodes Division v20pwm63.pdf Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 35 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8846 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.01 EUR
16+1.38 EUR
100+1.06 EUR
500+0.82 EUR
1000+0.7 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPSMA10AHE3_B/H TPSMA10AHE3_B/H Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 8.65VWM 14.5V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 14.5V
Voltage - Breakdown (Min): 9.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 8.65V
Current - Peak Pulse (10/1000µs): 27.6A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.18 EUR
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPSMA10AHE3_B/H TPSMA10AHE3_B/H Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 8.65VWM 14.5V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 14.5V
Voltage - Breakdown (Min): 9.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 8.65V
Current - Peak Pulse (10/1000µs): 27.6A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 3330 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.82 EUR
39+0.55 EUR
100+0.37 EUR
500+0.29 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ45A-E3/9AT SMCJ45A-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZ23C3V3-HE3_A-08 DZ23C3V3-HE3_A-08 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Qualification: AEC-Q101
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZ23C3V3-HE3_A-18 DZ23C3V3-HE3_A-18 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Qualification: AEC-Q101
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15PM153HM3/I V15PM153HM3/I Vishay General Semiconductor - Diodes Division v15pm153.pdf Description: DIODE SCHOTTKY 150V 3.8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.8A
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.47 EUR
10+2.21 EUR
100+1.49 EUR
500+1.18 EUR
1000+1.07 EUR
2000+1 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15K120C-M3/I V15K120C-M3/I Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15K120C-M3/H V15K120C-M3/H Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15K120CHM3/I V15K120CHM3/I Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15K120CHM3/H V15K120CHM3/H Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GURB5H60-E3/45 GURB5H60-E3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 600V TO263AB
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS22SHE3_B/H ss22s.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 18000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS22SHE3_B/I ss22s.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
40CPQ080 40CPQ80%2C100.pdf
40CPQ080
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 80 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C3V6P-M3-08 BZD27-M_Series.pdf
BZD27C3V6P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C3V6P-M3-08 BZD27-M_Series.pdf
BZD27C3V6P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 15629 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.38 EUR
25+0.86 EUR
50+0.63 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UG4A-E3/54 ug4a.pdf
UG4A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1400+0.45 EUR
Mindestbestellmenge: 1400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UG4A-E3/54 ug4a.pdf
UG4A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 2764 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
21+1.02 EUR
100+0.71 EUR
500+0.55 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMZG3796B-E3/52 smzg.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 1.5W DO215AA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-215AA (SMBG)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMZG3796B-E3/5B smzg.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 1.5W DO215AA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-215AA (SMBG)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMZG3796BHE3/5B smzg.pdf
SMZG3796BHE3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5W,20V 5%,SMB ZENER
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-214AA (SMBG)
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMZG3796BHE3/52 smzg.pdf
SMZG3796BHE3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5W,20V 5%,SMB ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-12TQ040STRLHM3 vs-12tq035shm3.pdf
VS-12TQ040STRLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 15A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-12TQ040STRRHM3 vs-12tq035shm3.pdf
VS-12TQ040STRRHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 15A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AU1FMHM3/H au1fd-au1fm.pdf
AU1FMHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 21089 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.69 EUR
50+0.5 EUR
100+0.44 EUR
500+0.33 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AS1FMHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FMHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 12618 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
44+0.48 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.27 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M103HM3/I v7n3m103.pdf
V7N3M103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.38 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M103HM3/I v7n3m103.pdf
V7N3M103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
23+0.94 EUR
25+0.88 EUR
100+0.73 EUR
250+0.67 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.42 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3103HM3/I v7n3103.pdf
V7N3103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.38 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3103HM3/I v7n3103.pdf
V7N3103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
23+0.94 EUR
25+0.88 EUR
100+0.73 EUR
250+0.67 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.42 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M153HM3/I v7n3m153.pdf
V7N3M153HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.38 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M153HM3/I v7n3m153.pdf
V7N3M153HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
23+0.94 EUR
25+0.88 EUR
100+0.73 EUR
250+0.67 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.42 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M63-M3/I v7n3m63.pdf
V7N3M63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.36 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M63-M3/I v7n3m63.pdf
V7N3M63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
23+0.93 EUR
25+0.87 EUR
100+0.7 EUR
250+0.64 EUR
500+0.55 EUR
1000+0.43 EUR
2500+0.38 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3L63-M3/I v7n3l63_.pdf
V7N3L63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.36 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3L63-M3/I v7n3l63_.pdf
V7N3L63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
23+0.93 EUR
25+0.87 EUR
100+0.7 EUR
250+0.64 EUR
500+0.55 EUR
1000+0.43 EUR
2500+0.38 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M103-M3/I v7n3m103.pdf
V7N3M103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.37 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M103-M3/I v7n3m103.pdf
V7N3M103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
23+0.95 EUR
25+0.88 EUR
100+0.7 EUR
250+0.65 EUR
500+0.56 EUR
1000+0.43 EUR
2500+0.39 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M153-M3/I v7n3m153.pdf
V7N3M153-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.37 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M153-M3/I v7n3m153.pdf
V7N3M153-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
23+0.95 EUR
25+0.88 EUR
100+0.7 EUR
250+0.65 EUR
500+0.56 EUR
1000+0.43 EUR
2500+0.39 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M63HM3/I v7n3m63.pdf
V7N3M63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.4 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3M63HM3/I v7n3m63.pdf
V7N3M63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
20+1.06 EUR
25+0.99 EUR
100+0.79 EUR
250+0.73 EUR
500+0.62 EUR
1000+0.48 EUR
2500+0.44 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3L63HM3/I v7n3l63_.pdf
V7N3L63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.4 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3L63HM3/I v7n3l63_.pdf
V7N3L63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
20+1.06 EUR
25+0.99 EUR
100+0.79 EUR
250+0.73 EUR
500+0.62 EUR
1000+0.48 EUR
2500+0.44 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3103-M3/I v7n3103.pdf
V7N3103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V7N3103-M3/I v7n3103.pdf
V7N3103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
20+1.06 EUR
25+0.88 EUR
100+0.69 EUR
250+0.6 EUR
500+0.54 EUR
1000+0.49 EUR
2500+0.43 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ90AHM3_A/H smcj.pdf
SMCJ90AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ90AHM3_A/I smcj.pdf
SMCJ90AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 10.3A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ90AHE3_A/I smcj.pdf
SMCJ90AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 10.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C7V5P-HE3-08 bzd27series.pdf
BZD27C7V5P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C7V5P-HE3-08 bzd27series.pdf
BZD27C7V5P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 28383 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
33+0.64 EUR
100+0.44 EUR
500+0.35 EUR
1000+0.3 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RS2JHE3_A/H rs2a.pdf
RS2JHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+0.45 EUR
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RS2JHE3_A/H rs2a.pdf
RS2JHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 1561 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
22+0.98 EUR
50+0.71 EUR
100+0.63 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-VSKDF500/06PBF vs-vskdf500-06pbf.pdf
VS-VSKDF500/06PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 772A INTAPAK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 772A (DC)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.66 V @ 500 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ8.5AHM3/I smbj.pdf
SMBJ8.5AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 14.4V
Voltage - Breakdown (Min): 9.44V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 8.5V
Current - Peak Pulse (10/1000µs): 41.7A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB11AHM3_B/I p6smb.pdf
P6SMB11AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 38.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 9600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB11AHE3_B/I p6smb.pdf
P6SMB11AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 38.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 9600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB11AHM3_B/H p6smb.pdf
P6SMB11AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 38.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB11AHE3_B/H p6smb.pdf
P6SMB11AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 38.5A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V20PWM63-M3/I v20pwm63.pdf
V20PWM63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 35 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8846 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
16+1.38 EUR
100+1.06 EUR
500+0.82 EUR
1000+0.7 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPSMA10AHE3_B/H tpsma.pdf
TPSMA10AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.65VWM 14.5V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 14.5V
Voltage - Breakdown (Min): 9.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 8.65V
Current - Peak Pulse (10/1000µs): 27.6A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.18 EUR
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPSMA10AHE3_B/H tpsma.pdf
TPSMA10AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.65VWM 14.5V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 14.5V
Voltage - Breakdown (Min): 9.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 8.65V
Current - Peak Pulse (10/1000µs): 27.6A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 3330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
39+0.55 EUR
100+0.37 EUR
500+0.29 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ45A-E3/9AT smcj.pdf
SMCJ45A-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZ23C3V3-HE3_A-08 dz23_series.pdf
DZ23C3V3-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Qualification: AEC-Q101
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZ23C3V3-HE3_A-18 dz23_series.pdf
DZ23C3V3-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Qualification: AEC-Q101
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15PM153HM3/I v15pm153.pdf
V15PM153HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.8A
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.47 EUR
10+2.21 EUR
100+1.49 EUR
500+1.18 EUR
1000+1.07 EUR
2000+1 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15K120C-M3/I v15k120c.pdf
V15K120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15K120C-M3/H v15k120c.pdf
V15K120C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15K120CHM3/I v15k120c.pdf
V15K120CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V15K120CHM3/H v15k120c.pdf
V15K120CHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GURB5H60-E3/45
GURB5H60-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V TO263AB
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 69 138 207 276 345 414 483 552 621 647 648 649 650 651 652 653 654 655 656 657 690 691  [ Nächste Seite >> ]