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S8CK-M3/I Vishay General Semiconductor - Diodes Division s8cgjkm.pdf Description: DIODE STANDARD 800V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 7000 Stücke:
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12+1.48 EUR
18+0.99 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 12
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3N259-E4/72 3N259-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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BZD27C24P-M3-08 BZD27C24P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 24V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
auf Bestellung 24000 Stücke:
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3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
21000+0.10 EUR
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BZD27C24P-M3-08 BZD27C24P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 24V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
auf Bestellung 26541 Stücke:
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100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
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SMB8J5.0CAHE3_B/I SMB8J5.0CAHE3_B/I Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: 800W,5.0V 5%,BIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMB8J5.0CAHE3_B/H SMB8J5.0CAHE3_B/H Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: 800W,5.0V 5%,BIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMB8J5.0CAHE3_A/I SMB8J5.0CAHE3_A/I Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMB8J5.0CAHE3_A/H SMB8J5.0CAHE3_A/H Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27B4V7P-E3-18 BZD27B4V7P-E3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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BZD27B4V7P-E3-08 BZD27B4V7P-E3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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BZD27B4V7P-M3-18 BZD27B4V7P-M3-18 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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BZD27B4V7P-HE3-08 BZD27B4V7P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4SMA150CAHM3_A/I P4SMA150CAHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 128VWM 207VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA6F100A-M3/H SMA6F100A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,100V 5%,UNIDIR,SLIM SMA TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3500 Stücke:
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3500+0.15 EUR
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SMA6F100A-M3/H SMA6F100A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,100V 5%,UNIDIR,SLIM SMA TVS
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 5718 Stücke:
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47+0.38 EUR
100+0.26 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 32
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SMBJ17CD-M3/I SMBJ17CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 17VWM 27.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.1A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 27.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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3.0C24CA-M3/H 3.0C24CA-M3/H Vishay General Semiconductor - Diodes Division 3_0c10ca-m3thru3_c120ca-m3.pdf Description: 3KW, 24V 5%,BIDIR,SMC TVS
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Produkt ist nicht verfügbar
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MBRB1045HM3/I MBRB1045HM3/I Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB1045-M3/I MBRB1045-M3/I Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V12P15-M3/H V12P15-M3/H Vishay General Semiconductor - Diodes Division v12p15.pdf Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
auf Bestellung 1500 Stücke:
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1500+0.49 EUR
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V12P15-M3/H V12P15-M3/H Vishay General Semiconductor - Diodes Division v12p15.pdf Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
auf Bestellung 2821 Stücke:
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500+0.61 EUR
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V12PM12HM3_A/H V12PM12HM3_A/H Vishay General Semiconductor - Diodes Division v12pm12.pdf Description: DIODE SCHOTTKY 120V 4.1A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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1500+0.58 EUR
3000+0.57 EUR
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V12PM12HM3_A/H V12PM12HM3_A/H Vishay General Semiconductor - Diodes Division v12pm12.pdf Description: DIODE SCHOTTKY 120V 4.1A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 4738 Stücke:
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500+0.77 EUR
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V12PM10HM3/H V12PM10HM3/H Vishay General Semiconductor - Diodes Division v12pm10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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1500+0.51 EUR
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V12PM10HM3/H V12PM10HM3/H Vishay General Semiconductor - Diodes Division v12pm10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3070 Stücke:
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15+1.19 EUR
100+0.90 EUR
500+0.70 EUR
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V12P45HM3_A/H V12P45HM3_A/H Vishay General Semiconductor - Diodes Division v12p45.pdf Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
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1500+0.62 EUR
3000+0.59 EUR
Mindestbestellmenge: 1500
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V12P45HM3_A/H V12P45HM3_A/H Vishay General Semiconductor - Diodes Division v12p45.pdf Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 5400 Stücke:
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9+1.99 EUR
14+1.32 EUR
100+1.00 EUR
500+0.80 EUR
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V12PM10-M3/H V12PM10-M3/H Vishay General Semiconductor - Diodes Division v12pm10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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V12PM10-M3/H V12PM10-M3/H Vishay General Semiconductor - Diodes Division v12pm10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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V12P8HM3_A/H V12P8HM3_A/H Vishay General Semiconductor - Diodes Division v12p8.pdf Description: DIODE SCHOTTKY 80V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Qualification: AEC-Q101
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V12P8HM3_A/H V12P8HM3_A/H Vishay General Semiconductor - Diodes Division v12p8.pdf Description: DIODE SCHOTTKY 80V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Qualification: AEC-Q101
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V12P6HM3_A/H V12P6HM3_A/H Vishay General Semiconductor - Diodes Division v12p6.pdf Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Qualification: AEC-Q101
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V12P6HM3_A/H V12P6HM3_A/H Vishay General Semiconductor - Diodes Division v12p6.pdf Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Qualification: AEC-Q101
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VS-ST110S16P2PBF VS-ST110S16P2PBF Vishay General Semiconductor - Diodes Division vs-st110spbfseries.pdf Description: SCR 1.6KV 175A TO209AC
Packaging: Bulk
Package / Case: TO-209AC, TO-94-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2700A, 2830A
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.52 V
Current - Off State (Max): 20 mA
Supplier Device Package: TO-209AC (TO-94)
Current - On State (It (RMS)) (Max): 175 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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43CTQ100 43CTQ100 Vishay General Semiconductor - Diodes Division 43CTQ80(100)(S)(-1)%20N0701%20REV.A.pdf Description: DIODE ARR SCHOT 100V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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43CTQ100S 43CTQ100S Vishay General Semiconductor - Diodes Division 43CTQ%28S%2C-1%29.pdf Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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Z4KE200A-E3/73 Z4KE200A-E3/73 Vishay General Semiconductor - Diodes Division Z4KE100A_thru_200A.pdf Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
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Z4KE200A-E3/73 Z4KE200A-E3/73 Vishay General Semiconductor - Diodes Division Z4KE100A_thru_200A.pdf Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
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SSB43L-M3/52T SSB43L-M3/52T Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
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SSB43L-M3/52T SSB43L-M3/52T Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
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SSB43LHE3_A/H SSB43LHE3_A/H Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
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SSB43LHE3_A/H SSB43LHE3_A/H Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
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SSB43LHE3_A/I SSB43LHE3_A/I Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
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SSB43LHE3_A/I SSB43LHE3_A/I Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
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SE30PAJ-M3/I SE30PAJ-M3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE30PAJ-M3/I SE30PAJ-M3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE30PABHM3/I SE30PABHM3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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SE30PABHM3/I SE30PABHM3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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SE30PAJHM3/I SE30PAJHM3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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SE30PAJHM3/I SE30PAJHM3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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SE50PAJ-M3/I SE50PAJ-M3/I Vishay General Semiconductor - Diodes Division se50pab.pdf Description: DIODE GEN PURP 600V 5A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE50PAJ-M3/I SE50PAJ-M3/I Vishay General Semiconductor - Diodes Division se50pab.pdf Description: DIODE GEN PURP 600V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MBRB20H90CT-E3/45 MBRB20H90CT-E3/45 Vishay General Semiconductor - Diodes Division MBR%28F%2CB%2920H90%2C100CT_Rev_7-29-15.pdf Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 90 V
Produkt ist nicht verfügbar
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SMCJ51CAHE3_A/H SMCJ51CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
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850+0.65 EUR
1700+0.60 EUR
2550+0.58 EUR
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SMCJ51CAHE3_A/H SMCJ51CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2965 Stücke:
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10+1.85 EUR
15+1.25 EUR
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SS6P4C-M3/86A SS6P4C-M3/86A Vishay General Semiconductor - Diodes Division ss6p4c.pdf Description: DIODE ARR SCHOTT 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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SS6P4C-M3/86A SS6P4C-M3/86A Vishay General Semiconductor - Diodes Division ss6p4c.pdf Description: DIODE ARR SCHOTT 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 4480 Stücke:
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SMA6F51A-M3/H SMA6F51A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,51V 5%,UNIDIR,SLIM SMA TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMA6F51A-M3/H SMA6F51A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,51V 5%,UNIDIR,SLIM SMA TVS
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 5132 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
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100+0.26 EUR
500+0.20 EUR
1000+0.18 EUR
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SM5S22CAHM3/I SM5S22CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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750+2.06 EUR
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S8CK-M3/I s8cgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
18+0.99 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 12
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3N259-E4/72 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
3N259-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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BZD27C24P-M3-08 BZD27-M_Series.pdf
BZD27C24P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
21000+0.10 EUR
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BZD27C24P-M3-08 BZD27-M_Series.pdf
BZD27C24P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
auf Bestellung 26541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
55+0.33 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 36
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SMB8J5.0CAHE3_B/I smb10j5.pdf
SMB8J5.0CAHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 800W,5.0V 5%,BIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMB8J5.0CAHE3_B/H smb10j5.pdf
SMB8J5.0CAHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 800W,5.0V 5%,BIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMB8J5.0CAHE3_A/I smb10j5.pdf
SMB8J5.0CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMB8J5.0CAHE3_A/H smb10j5.pdf
SMB8J5.0CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27B4V7P-E3-18 bzd27bseries.pdf
BZD27B4V7P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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BZD27B4V7P-E3-08 bzd27bseries.pdf
BZD27B4V7P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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BZD27B4V7P-M3-18 bzd27b-mseries.pdf
BZD27B4V7P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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BZD27B4V7P-HE3-08 bzd27bseries.pdf
BZD27B4V7P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4SMA150CAHM3_A/I p4sma.pdf
P4SMA150CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 128VWM 207VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA6F100A-M3/H sma6f5.pdf
SMA6F100A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,100V 5%,UNIDIR,SLIM SMA TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.15 EUR
Mindestbestellmenge: 3500
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SMA6F100A-M3/H sma6f5.pdf
SMA6F100A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,100V 5%,UNIDIR,SLIM SMA TVS
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 5718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.26 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 32
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SMBJ17CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ17CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 27.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.1A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 27.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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3.0C24CA-M3/H 3_0c10ca-m3thru3_c120ca-m3.pdf
3.0C24CA-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3KW, 24V 5%,BIDIR,SMC TVS
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Produkt ist nicht verfügbar
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MBRB1045HM3/I mbr10xx.pdf
MBRB1045HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB1045-M3/I mbr10xx.pdf
MBRB1045-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V12P15-M3/H v12p15.pdf
V12P15-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.49 EUR
Mindestbestellmenge: 1500
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V12P15-M3/H v12p15.pdf
V12P15-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
auf Bestellung 2821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
18+1.03 EUR
100+0.78 EUR
500+0.61 EUR
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V12PM12HM3_A/H v12pm12.pdf
V12PM12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 4.1A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.58 EUR
3000+0.57 EUR
Mindestbestellmenge: 1500
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V12PM12HM3_A/H v12pm12.pdf
V12PM12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 4.1A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 4738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
15+1.24 EUR
100+0.99 EUR
500+0.77 EUR
Mindestbestellmenge: 12
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V12PM10HM3/H v12pm10.pdf
V12PM10HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.51 EUR
Mindestbestellmenge: 1500
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V12PM10HM3/H v12pm10.pdf
V12PM10HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
15+1.19 EUR
100+0.90 EUR
500+0.70 EUR
Mindestbestellmenge: 12
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V12P45HM3_A/H v12p45.pdf
V12P45HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.62 EUR
3000+0.59 EUR
Mindestbestellmenge: 1500
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V12P45HM3_A/H v12p45.pdf
V12P45HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
14+1.32 EUR
100+1.00 EUR
500+0.80 EUR
Mindestbestellmenge: 9
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V12PM10-M3/H v12pm10.pdf
V12PM10-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.58 EUR
4500+0.55 EUR
Mindestbestellmenge: 1500
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V12PM10-M3/H v12pm10.pdf
V12PM10-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 5513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
15+1.19 EUR
100+0.90 EUR
500+0.70 EUR
Mindestbestellmenge: 10
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V12P8HM3_A/H v12p8.pdf
V12P8HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.64 EUR
3000+0.58 EUR
Mindestbestellmenge: 1500
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V12P8HM3_A/H v12p8.pdf
V12P8HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Qualification: AEC-Q101
auf Bestellung 5952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
15+1.25 EUR
100+1.00 EUR
500+0.78 EUR
Mindestbestellmenge: 12
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V12P6HM3_A/H v12p6.pdf
V12P6HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.60 EUR
3000+0.58 EUR
Mindestbestellmenge: 1500
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V12P6HM3_A/H v12p6.pdf
V12P6HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Qualification: AEC-Q101
auf Bestellung 5850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
14+1.29 EUR
100+0.98 EUR
500+0.78 EUR
Mindestbestellmenge: 10
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VS-ST110S16P2PBF vs-st110spbfseries.pdf
VS-ST110S16P2PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 175A TO209AC
Packaging: Bulk
Package / Case: TO-209AC, TO-94-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2700A, 2830A
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.52 V
Current - Off State (Max): 20 mA
Supplier Device Package: TO-209AC (TO-94)
Current - On State (It (RMS)) (Max): 175 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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43CTQ100 43CTQ80(100)(S)(-1)%20N0701%20REV.A.pdf
43CTQ100
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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43CTQ100S 43CTQ%28S%2C-1%29.pdf
43CTQ100S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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Z4KE200A-E3/73 Z4KE100A_thru_200A.pdf
Z4KE200A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
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Z4KE200A-E3/73 Z4KE100A_thru_200A.pdf
Z4KE200A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.18 EUR
Mindestbestellmenge: 3000
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SSB43L-M3/52T ssb43l.pdf
SSB43L-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.26 EUR
1500+0.24 EUR
2250+0.22 EUR
Mindestbestellmenge: 750
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SSB43L-M3/52T ssb43l.pdf
SSB43L-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
auf Bestellung 3834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
34+0.52 EUR
100+0.35 EUR
Mindestbestellmenge: 23
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SSB43LHE3_A/H ssb43l.pdf
SSB43LHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.36 EUR
1500+0.33 EUR
Mindestbestellmenge: 750
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SSB43LHE3_A/H ssb43l.pdf
SSB43LHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
25+0.71 EUR
100+0.48 EUR
Mindestbestellmenge: 17
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SSB43LHE3_A/I ssb43l.pdf
SSB43LHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSB43LHE3_A/I ssb43l.pdf
SSB43LHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
25+0.71 EUR
100+0.48 EUR
Mindestbestellmenge: 17
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SE30PAJ-M3/I se30pab.pdf
SE30PAJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14000+0.15 EUR
Mindestbestellmenge: 14000
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SE30PAJ-M3/I se30pab.pdf
SE30PAJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 27914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
41+0.43 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.20 EUR
2000+0.19 EUR
5000+0.17 EUR
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SE30PABHM3/I se30pab.pdf
SE30PABHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE30PABHM3/I se30pab.pdf
SE30PABHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 9268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
41+0.43 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.20 EUR
2000+0.19 EUR
5000+0.17 EUR
Mindestbestellmenge: 28
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SE30PAJHM3/I se30pab.pdf
SE30PAJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE30PAJHM3/I se30pab.pdf
SE30PAJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 12385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
41+0.43 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.20 EUR
2000+0.19 EUR
5000+0.17 EUR
Mindestbestellmenge: 28
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SE50PAJ-M3/I se50pab.pdf
SE50PAJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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SE50PAJ-M3/I se50pab.pdf
SE50PAJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 13974 Stücke:
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Anzahl Preis
20+0.92 EUR
29+0.61 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
2000+0.27 EUR
5000+0.24 EUR
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MBRB20H90CT-E3/45 MBR%28F%2CB%2920H90%2C100CT_Rev_7-29-15.pdf
MBRB20H90CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 90 V
Produkt ist nicht verfügbar
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SMCJ51CAHE3_A/H smcj.pdf
SMCJ51CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.65 EUR
1700+0.60 EUR
2550+0.58 EUR
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SMCJ51CAHE3_A/H smcj.pdf
SMCJ51CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2965 Stücke:
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Anzahl Preis
10+1.85 EUR
15+1.25 EUR
100+0.87 EUR
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SS6P4C-M3/86A ss6p4c.pdf
SS6P4C-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
1500+0.34 EUR
3000+0.31 EUR
Mindestbestellmenge: 1500
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SS6P4C-M3/86A ss6p4c.pdf
SS6P4C-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 4480 Stücke:
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Anzahl Preis
17+1.09 EUR
25+0.73 EUR
100+0.50 EUR
500+0.39 EUR
Mindestbestellmenge: 17
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SMA6F51A-M3/H sma6f5.pdf
SMA6F51A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%,UNIDIR,SLIM SMA TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMA6F51A-M3/H sma6f5.pdf
SMA6F51A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%,UNIDIR,SLIM SMA TVS
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 5132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
46+0.39 EUR
100+0.26 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 31
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SM5S22CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S22CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.06 EUR
Mindestbestellmenge: 750
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