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FESB16JTHE3_A/I FESB16JTHE3_A/I Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 765 Stücke:
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6+3.34 EUR
10+2.77 EUR
100+2.2 EUR
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FESB16DTHE3_A/I FESB16DTHE3_A/I Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 200V 16A TO263AB
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FESB16ATHE3_A/I FESB16ATHE3_A/I Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 50V 16A TO263AB
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FESB16DTHE3_A/P FESB16DTHE3_A/P Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 200V 16A TO263AB
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FESB16CTHE3_A/P FESB16CTHE3_A/P Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
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FESB16FTHE3_A/I FESB16FTHE3_A/I Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 300V 16A TO263AB
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FESB16HTHE3_A/I FESB16HTHE3_A/I Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 500V 16A TO263AB
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FESB16ATHE3_A/P FESB16ATHE3_A/P Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 50V 16A TO263AB
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FESB16GTHE3_A/I FESB16GTHE3_A/I Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 400V 16A TO263AB
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FESB16BTHE3_A/I FESB16BTHE3_A/I Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 100V 16A TO263AB
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FESB16FTHE3_A/P FESB16FTHE3_A/P Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 300V 16A TO263AB
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FESB16GTHE3_A/P FESB16GTHE3_A/P Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 400V 16A TO263AB
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FESB16BTHE3_A/P FESB16BTHE3_A/P Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 100V 16A TO263AB
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FESB16CTHE3_A/I FESB16CTHE3_A/I Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
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FESB16JTHE3_A/P FESB16JTHE3_A/P Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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FESB16HTHE3_A/P FESB16HTHE3_A/P Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: 16A,500V,50NS,SINGLE UF RECT
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ZMM5242B-7 Vishay General Semiconductor - Diodes Division ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 12V 500MW MINI MELF
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ZMM5242B-13 Vishay General Semiconductor - Diodes Division ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 12V 500MW MINI MELF
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TPSMA30AHE3_B/H TPSMA30AHE3_B/H Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 9.7A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
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TPSMA30AHE3_B/H TPSMA30AHE3_B/H Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 9.7A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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39+0.46 EUR
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VS-161MT180C VS-161MT180C Vishay General Semiconductor - Diodes Division vs-161mt_c_series.pdf Description: MTC - THREE PHASE BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 257 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 300 A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
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VS-301MT180C VS-301MT180C Vishay General Semiconductor - Diodes Division vs-301mt_c_series.pdf Description: MTC - THREE PHASE BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 300 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
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VS-131MT180C VS-131MT180C Vishay General Semiconductor - Diodes Division vs-131mt_c_series.pdf Description: MTC - THREE PHASE BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 218 A
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
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VS-10ETS12-M3 VS-10ETS12-M3 Vishay General Semiconductor - Diodes Division vs-10etsm3.pdf Description: DIODE STANDARD 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 7744 Stücke:
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5+3.64 EUR
50+1.81 EUR
100+1.63 EUR
500+1.31 EUR
1000+1.28 EUR
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SMCJ12CAHM3_A/H SMCJ12CAHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 75.4A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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TZMC30-GS18 TZMC30-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 30V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
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TZMC30-GS18 TZMC30-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 30V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 4015 Stücke:
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84+0.21 EUR
118+0.15 EUR
272+0.065 EUR
500+0.062 EUR
1000+0.055 EUR
2000+0.054 EUR
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P4SMA27AHM3_A/I P4SMA27AHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA27AHM3/I P4SMA27AHM3/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
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P4SMA27AHM3_A/H P4SMA27AHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
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P4SMA27AHM3/H P4SMA27AHM3/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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VS-EPX6007L-N3 VS-EPX6007L-N3 Vishay General Semiconductor - Diodes Division vs-epx6007l-n3.pdf Description: DIODE GEN PURP 650V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 495 Stücke:
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3+6.46 EUR
10+5.8 EUR
100+4.75 EUR
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SL23-7001HE3_A/I SL23-7001HE3_A/I Vishay General Semiconductor - Diodes Division SL22,SL23.pdf Description: DIODE SCHOTTKY
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12CWQ03FNTR 12CWQ03FNTR Vishay General Semiconductor - Diodes Division 12CWQ03FN.pdf Description: DIODE ARRAY SCHOTTKY 30V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
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VS-60EPF12-M3 VS-60EPF12-M3 Vishay General Semiconductor - Diodes Division vs-60pf1-m3series.pdf Description: DIODE STANDARD 1200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 358 Stücke:
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2+15.8 EUR
25+8.26 EUR
100+8.17 EUR
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VS-10ETS12THM3 Vishay General Semiconductor - Diodes Division vs-10ets12thm3.pdf Description: RECTIFIER DIODE 10A 1200V TO-220
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S5MS-E3/9AT S5MS-E3/9AT Vishay General Semiconductor - Diodes Division s5ms.pdf Description: DIODE STD 1000V 1.6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S5MS-E3/9AT S5MS-E3/9AT Vishay General Semiconductor - Diodes Division s5ms.pdf Description: DIODE STD 1000V 1.6A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1460 Stücke:
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23+0.77 EUR
35+0.52 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.28 EUR
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BZX84B15-HE3-08 BZX84B15-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 15V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
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BZX84B15-HE3-08 BZX84B15-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 15V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3018 Stücke:
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72+0.25 EUR
106+0.17 EUR
157+0.11 EUR
500+0.086 EUR
1000+0.077 EUR
Mindestbestellmenge: 72
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BZT52C3V3-HE3-08 BZT52C3V3-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
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BZT52C3V3-HE3-08 BZT52C3V3-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 735 Stücke:
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500+0.099 EUR
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BZX55C30-TR BZX55C30-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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10000+0.041 EUR
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BZX55C30-TR BZX55C30-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 18157 Stücke:
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127+0.14 EUR
313+0.056 EUR
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1000+0.043 EUR
2000+0.042 EUR
5000+0.041 EUR
Mindestbestellmenge: 84
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SMPZ3919B-M3/84A SMPZ3919B-M3/84A Vishay General Semiconductor - Diodes Division smpz39x.pdf Description: DIODE ZENER 5.6V 500MW DO220AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-220AA (SMP)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
auf Bestellung 3000 Stücke:
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SMPZ3919B-M3/84A SMPZ3919B-M3/84A Vishay General Semiconductor - Diodes Division smpz39x.pdf Description: DIODE ZENER 5.6V 500MW DO220AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-220AA (SMP)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
auf Bestellung 5984 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
53+0.34 EUR
107+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 35
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BZD27B39P-M3-08 BZD27B39P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-E3-18 BZD27B39P-E3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
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BZD27B39P-HE3-08 BZD27B39P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-HE3-18 BZD27B39P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27B39P-M3-18 BZD27B39P-M3-18 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B39P-E3-08 BZD27B39P-E3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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VS-APH3006LHN3 VS-APH3006LHN3 Vishay General Semiconductor - Diodes Division vs-aph3006lhn3.pdf Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-APH3006L-N3 Vishay General Semiconductor - Diodes Division vs-aph3006l-n3.pdf Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
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MURS460-E3/H MURS460-E3/H Vishay General Semiconductor - Diodes Division murs460.pdf Description: DIODE GEN PURP 600V 2.4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MURS460-M3/I MURS460-M3/I Vishay General Semiconductor - Diodes Division murs460.pdf Description: DIODE GEN PURP 600V 2.4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURS460-M3/H MURS460-M3/H Vishay General Semiconductor - Diodes Division murs460.pdf Description: DIODE GEN PURP 600V 2.4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MURS460-E3/I MURS460-E3/I Vishay General Semiconductor - Diodes Division murs460.pdf Description: DIODE GEN PURP 600V 2.4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V30K45HM3/H V30K45HM3/H Vishay General Semiconductor - Diodes Division v30k45.pdf Description: DIODE SCHOTTKY 45V 30A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V30K45HM3/H V30K45HM3/H Vishay General Semiconductor - Diodes Division v30k45.pdf Description: DIODE SCHOTTKY 45V 30A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1726 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
15+1.25 EUR
100+1 EUR
500+0.79 EUR
Mindestbestellmenge: 10
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FESB16JTHE3_A/I fes16jt.pdf
FESB16JTHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.77 EUR
100+2.2 EUR
Mindestbestellmenge: 6
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FESB16DTHE3_A/I fes16jt.pdf
FESB16DTHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16ATHE3_A/I fes16jt.pdf
FESB16ATHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16DTHE3_A/P fes16jt.pdf
FESB16DTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16CTHE3_A/P fes16jt.pdf
FESB16CTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16FTHE3_A/I fes16jt.pdf
FESB16FTHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16HTHE3_A/I fes16jt.pdf
FESB16HTHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16ATHE3_A/P fes16jt.pdf
FESB16ATHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16GTHE3_A/I fes16jt.pdf
FESB16GTHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16BTHE3_A/I fes16jt.pdf
FESB16BTHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16FTHE3_A/P fes16jt.pdf
FESB16FTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16GTHE3_A/P fes16jt.pdf
FESB16GTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16BTHE3_A/P fes16jt.pdf
FESB16BTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16CTHE3_A/I fes16jt.pdf
FESB16CTHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16JTHE3_A/P fes16jt.pdf
FESB16JTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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FESB16HTHE3_A/P fes16jt.pdf
FESB16HTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 16A,500V,50NS,SINGLE UF RECT
Produkt ist nicht verfügbar
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ZMM5242B-7 ZMM5221B%20thru%20ZMM5267B.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW MINI MELF
Produkt ist nicht verfügbar
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ZMM5242B-13 ZMM5221B%20thru%20ZMM5267B.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW MINI MELF
Produkt ist nicht verfügbar
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TPSMA30AHE3_B/H tpsma.pdf
TPSMA30AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 9.7A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.15 EUR
Mindestbestellmenge: 1800
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TPSMA30AHE3_B/H tpsma.pdf
TPSMA30AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 9.7A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
39+0.46 EUR
100+0.31 EUR
500+0.24 EUR
Mindestbestellmenge: 26
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VS-161MT180C vs-161mt_c_series.pdf
VS-161MT180C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MTC - THREE PHASE BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 257 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 300 A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+108.47 EUR
12+98.61 EUR
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VS-301MT180C vs-301mt_c_series.pdf
VS-301MT180C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MTC - THREE PHASE BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 300 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+135.63 EUR
12+123.81 EUR
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VS-131MT180C vs-131mt_c_series.pdf
VS-131MT180C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MTC - THREE PHASE BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 218 A
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+102.31 EUR
12+93 EUR
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VS-10ETS12-M3 vs-10etsm3.pdf
VS-10ETS12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 7744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
50+1.81 EUR
100+1.63 EUR
500+1.31 EUR
1000+1.28 EUR
Mindestbestellmenge: 5
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SMCJ12CAHM3_A/H smcj.pdf
SMCJ12CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 75.4A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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TZMC30-GS18 tzm.pdf
TZMC30-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZMC30-GS18 tzm.pdf
TZMC30-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 4015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
118+0.15 EUR
272+0.065 EUR
500+0.062 EUR
1000+0.055 EUR
2000+0.054 EUR
Mindestbestellmenge: 84
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P4SMA27AHM3_A/I p4sma.pdf
P4SMA27AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4SMA27AHM3/I p4sma.pdf
P4SMA27AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Produkt ist nicht verfügbar
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P4SMA27AHM3_A/H p4sma.pdf
P4SMA27AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Produkt ist nicht verfügbar
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P4SMA27AHM3/H p4sma.pdf
P4SMA27AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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VS-EPX6007L-N3 vs-epx6007l-n3.pdf
VS-EPX6007L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 650V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
10+5.8 EUR
100+4.75 EUR
Mindestbestellmenge: 3
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SL23-7001HE3_A/I SL22,SL23.pdf
SL23-7001HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY
Produkt ist nicht verfügbar
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12CWQ03FNTR 12CWQ03FN.pdf
12CWQ03FNTR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Produkt ist nicht verfügbar
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VS-60EPF12-M3 vs-60pf1-m3series.pdf
VS-60EPF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.8 EUR
25+8.26 EUR
100+8.17 EUR
Mindestbestellmenge: 2
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VS-10ETS12THM3 vs-10ets12thm3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER DIODE 10A 1200V TO-220
Produkt ist nicht verfügbar
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S5MS-E3/9AT s5ms.pdf
S5MS-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S5MS-E3/9AT s5ms.pdf
S5MS-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.6A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
35+0.52 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 23
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BZX84B15-HE3-08 bzx84_series.pdf
BZX84B15-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B15-HE3-08 bzx84_series.pdf
BZX84B15-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3018 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
106+0.17 EUR
157+0.11 EUR
500+0.086 EUR
1000+0.077 EUR
Mindestbestellmenge: 72
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BZT52C3V3-HE3-08 bzt52.pdf
BZT52C3V3-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C3V3-HE3-08 bzt52.pdf
BZT52C3V3-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
81+0.22 EUR
131+0.14 EUR
500+0.099 EUR
Mindestbestellmenge: 50
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BZX55C30-TR bzx55.pdf
BZX55C30-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.041 EUR
Mindestbestellmenge: 10000
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BZX55C30-TR bzx55.pdf
BZX55C30-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 18157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
127+0.14 EUR
313+0.056 EUR
500+0.052 EUR
1000+0.043 EUR
2000+0.042 EUR
5000+0.041 EUR
Mindestbestellmenge: 84
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SMPZ3919B-M3/84A smpz39x.pdf
SMPZ3919B-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO220AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-220AA (SMP)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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SMPZ3919B-M3/84A smpz39x.pdf
SMPZ3919B-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO220AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-220AA (SMP)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
auf Bestellung 5984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
53+0.34 EUR
107+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 35
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BZD27B39P-M3-08 bzd27b-mseries.pdf
BZD27B39P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-E3-18 bzd27bseries.pdf
BZD27B39P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-HE3-08 bzd27bseries.pdf
BZD27B39P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-HE3-18 bzd27bseries.pdf
BZD27B39P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27B39P-M3-18 bzd27b-mseries.pdf
BZD27B39P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-E3-08 bzd27bseries.pdf
BZD27B39P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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VS-APH3006LHN3 vs-aph3006lhn3.pdf
VS-APH3006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-APH3006L-N3 vs-aph3006l-n3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
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MURS460-E3/H murs460.pdf
MURS460-E3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MURS460-M3/I murs460.pdf
MURS460-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MURS460-M3/H murs460.pdf
MURS460-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MURS460-E3/I murs460.pdf
MURS460-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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V30K45HM3/H v30k45.pdf
V30K45HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V30K45HM3/H v30k45.pdf
V30K45HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
15+1.25 EUR
100+1 EUR
500+0.79 EUR
Mindestbestellmenge: 10
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