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SMB10J15A-E3/52 SMB10J15A-E3/52 Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: TVS DIODE 15VWM 24.4VC DO214AA
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SM8S14AHE3_A/I SM8S14AHE3_A/I Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 14VWM 23.2VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BAS70-00-HE3-08 BAS70-00-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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BAS70-00-HE3-08 BAS70-00-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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BZX84C43-E3-08 BZX84C43-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 43V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
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BZX84C43-E3-08 BZX84C43-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 43V 300MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
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MMSZ4683-HE3-08 MMSZ4683-HE3-08 Vishay General Semiconductor - Diodes Division mmsz4681.pdf Description: DIODE ZENER 3V 500MW SOD123
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MMSZ4683-HE3-08 MMSZ4683-HE3-08 Vishay General Semiconductor - Diodes Division mmsz4681.pdf Description: DIODE ZENER 3V 500MW SOD123
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MBR20H35CTHE3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)20H35CT - 20H60CT.pdf Description: DIODE ARR SCHOTT 35V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT55C20-GS08 BZT55C20-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
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BZT55C20-GS08 BZT55C20-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
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SM6T7V5CAHE3_A/H SM6T7V5CAHE3_A/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 6.4VWM 11.3V DO214AA
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SM6T7V5CAHE3_A/I SM6T7V5CAHE3_A/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 6.4VWM 11.3V DO214AA
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SM6T7V5CAHM3_A/H SM6T7V5CAHM3_A/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 6.4VWM 11.3V DO214AA
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SM6T7V5CAHM3_A/I SM6T7V5CAHM3_A/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 6.4VWM 11.3V DO214AA
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SM6T7V5CAHM3/H SM6T7V5CAHM3/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 6.4VWM 11.3V DO214AA
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SM6T7V5CAHM3/I SM6T7V5CAHM3/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 6.4VWM 11.3V DO214AA
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TZS4690-GS08 TZS4690-GS08 Vishay General Semiconductor - Diodes Division tzs4678.pdf Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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TZS4690-GS08 TZS4690-GS08 Vishay General Semiconductor - Diodes Division tzs4678.pdf Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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TZS4690B-GS08 TZS4690B-GS08 Vishay General Semiconductor - Diodes Division tzs4678.pdf Description: DIODE ZENER 5.6V 500MW SOD80
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MBRB16H35-E3/81 Vishay General Semiconductor - Diodes Division MBR(F,B)16Hxx_Rev_8-9-13.pdf Description: DIODE SCHOTTKY TO-263AB
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MBR10H35-E3/45 MBR10H35-E3/45 Vishay General Semiconductor - Diodes Division MBR%28F%2CB%2910H35%20-%2010H60.pdf Description: DIODE STANDARD 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR16H35-E3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)16Hxx_Rev_8-9-13.pdf Description: DIODE SCHOTTKY 35V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBRB16H35-E3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)16Hxx_Rev_8-9-13.pdf Description: DIODE SCHOTTKY TO-263AB
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MBRB7H35-E3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)7H35%20thru%20MBR(F,B)7H60.pdf Description: DIODE SCHOTTKY TO-263AB
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MBRF10H35-E3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)10Hxx.pdf Description: DIODE SCHOTTKY ITO-220AC
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MBRF16H35-E3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)16Hxx_Rev_8-9-13.pdf Description: DIODE SCHOTTKY ITO-220AC
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ZMY36-GS08 ZMY36-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZMY36-GS08 ZMY36-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
Qualification: AEC-Q101
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SB360L-5705E3/72 SB360L-5705E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SB360-5300E3/73 SB360-5300E3/73 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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UF4005-E3S/73 UF4005-E3S/73 Vishay General Semiconductor - Diodes Division UF4001 thru UF4007.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSE1PDHM3/89A MSE1PDHM3/89A Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE STANDARD 200V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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MSE1PDHM3/89A MSE1PDHM3/89A Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE STANDARD 200V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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MSE1PJHM3/89A MSE1PJHM3/89A Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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MSE1PJHM3/89A MSE1PJHM3/89A Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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SML4752HE3_A/H SML4752HE3_A/H Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 33V 1W DO214AC
Produkt ist nicht verfügbar
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P6SMB510A01HM3_C/I P6SMB510A01HM3_C/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB510A01HM3_A/I P6SMB510A01HM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB510AHM3_A/H P6SMB510AHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB510AHM3_A/I P6SMB510AHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-45EPS08L-M3 Vishay General Semiconductor - Diodes Division vs-45epsl-m3.pdf Description: NEW INPUT DIODES - TO-247
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VS-45APS08L-M3 Vishay General Semiconductor - Diodes Division vs-45epsl-m3.pdf Description: NEW INPUT DIODES - TO-247
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VS-65APS08L-M3 Vishay General Semiconductor - Diodes Division vs-65epsl-m3.pdf Description: NEW INPUT DIODES - TO-247
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SMBJ9.0CAHE3_A/H SMBJ9.0CAHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 9VWM 15.4VC DO214AA
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SMBJ9.0CAHE3_A/I SMBJ9.0CAHE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 9VWM 15.4VC DO214AA
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SML4759A-E3/5A SML4759A-E3/5A Vishay General Semiconductor - Diodes Division SML4728-SML4764A.pdf Description: DIODE ZENER 62V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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SML4759A-E3/5A SML4759A-E3/5A Vishay General Semiconductor - Diodes Division SML4728-SML4764A.pdf Description: DIODE ZENER 62V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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BZM55C24-TR BZM55C24-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 24V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 220 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
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GF1D-E3/67A GF1D-E3/67A Vishay General Semiconductor - Diodes Division gf1x.pdf Description: DIODE STANDARD 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RGF1DHE3/67A RGF1DHE3/67A Vishay General Semiconductor - Diodes Division rgf1.pdf Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RGF1DHE3/67A RGF1DHE3/67A Vishay General Semiconductor - Diodes Division rgf1.pdf Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GF1D-2HE3_A/H Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GF1D-2HE3/67A Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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S1K-E3/5AT S1K-E3/5AT Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1K-E3/5AT S1K-E3/5AT Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MMSZ4694-E3-08 MMSZ4694-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
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3000+0.098 EUR
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MMSZ4694-E3-08 MMSZ4694-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
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S1BHE3_A/H S1BHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE STANDARD 100V 1A DO214AC
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S1BHE3_A/H S1BHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE STANDARD 100V 1A DO214AC
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SMB10J15A-E3/52 smb10j5.pdf
SMB10J15A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AA
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SM8S14AHE3_A/I sm8s.pdf
SM8S14AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BAS70-00-HE3-08
BAS70-00-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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3000+0.13 EUR
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BAS70-00-HE3-08
BAS70-00-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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BZX84C43-E3-08 bzx84_series.pdf
BZX84C43-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
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BZX84C43-E3-08 bzx84_series.pdf
BZX84C43-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 300MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
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MMSZ4683-HE3-08 mmsz4681.pdf
MMSZ4683-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD123
Produkt ist nicht verfügbar
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MMSZ4683-HE3-08 mmsz4681.pdf
MMSZ4683-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD123
Produkt ist nicht verfügbar
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MBR20H35CTHE3/45 MBR(F,B)20H35CT - 20H60CT.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT55C20-GS08 bzt55.pdf
BZT55C20-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
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2500+0.18 EUR
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BZT55C20-GS08 bzt55.pdf
BZT55C20-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
auf Bestellung 6867 Stücke:
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AnzahlPrivatkunde
25+0.83 EUR
42+0.5 EUR
58+0.36 EUR
100+0.32 EUR
500+0.24 EUR
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SM6T7V5CAHE3_A/H sm6t.pdf
SM6T7V5CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3V DO214AA
Produkt ist nicht verfügbar
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SM6T7V5CAHE3_A/I sm6t.pdf
SM6T7V5CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3V DO214AA
Produkt ist nicht verfügbar
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SM6T7V5CAHM3_A/H sm6t.pdf
SM6T7V5CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3V DO214AA
Produkt ist nicht verfügbar
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SM6T7V5CAHM3_A/I sm6t.pdf
SM6T7V5CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3V DO214AA
Produkt ist nicht verfügbar
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SM6T7V5CAHM3/H sm6t.pdf
SM6T7V5CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3V DO214AA
Produkt ist nicht verfügbar
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SM6T7V5CAHM3/I sm6t.pdf
SM6T7V5CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3V DO214AA
Produkt ist nicht verfügbar
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TZS4690-GS08 tzs4678.pdf
TZS4690-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Produkt ist nicht verfügbar
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TZS4690-GS08 tzs4678.pdf
TZS4690-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
auf Bestellung 1983 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
40+0.52 EUR
100+0.29 EUR
500+0.18 EUR
1000+0.13 EUR
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TZS4690B-GS08 tzs4678.pdf
TZS4690B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Produkt ist nicht verfügbar
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MBRB16H35-E3/81 MBR(F,B)16Hxx_Rev_8-9-13.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY TO-263AB
Produkt ist nicht verfügbar
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MBR10H35-E3/45 MBR%28F%2CB%2910H35%20-%2010H60.pdf
MBR10H35-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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MBR16H35-E3/45 MBR(F,B)16Hxx_Rev_8-9-13.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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MBRB16H35-E3/45 MBR(F,B)16Hxx_Rev_8-9-13.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY TO-263AB
Produkt ist nicht verfügbar
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MBRB7H35-E3/45 MBR(F,B)7H35%20thru%20MBR(F,B)7H60.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY TO-263AB
Produkt ist nicht verfügbar
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MBRF10H35-E3/45 MBR(F,B)10Hxx.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Produkt ist nicht verfügbar
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MBRF16H35-E3/45 MBR(F,B)16Hxx_Rev_8-9-13.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Produkt ist nicht verfügbar
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ZMY36-GS08 zmy3v9.pdf
ZMY36-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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ZMY36-GS08 zmy3v9.pdf
ZMY36-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
26+0.81 EUR
50+0.6 EUR
100+0.52 EUR
500+0.39 EUR
Mindestbestellmenge: 16 Stücke
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SB360L-5705E3/72
SB360L-5705E3/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SB360-5300E3/73
SB360-5300E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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UF4005-E3S/73 UF4001 thru UF4007.pdf
UF4005-E3S/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSE1PDHM3/89A mse1pj.pdf
MSE1PDHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4500+0.15 EUR
13500+0.14 EUR
Mindestbestellmenge: 4500 Stücke
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MSE1PDHM3/89A mse1pj.pdf
MSE1PDHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14241 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
44+0.48 EUR
61+0.35 EUR
100+0.31 EUR
500+0.23 EUR
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MSE1PJHM3/89A mse1pj.pdf
MSE1PJHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4500+0.086 EUR
9000+0.077 EUR
Mindestbestellmenge: 4500 Stücke
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MSE1PJHM3/89A mse1pj.pdf
MSE1PJHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 60991 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
64+0.33 EUR
126+0.17 EUR
500+0.13 EUR
1000+0.1 EUR
2000+0.086 EUR
Mindestbestellmenge: 46 Stücke
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SML4752HE3_A/H sml4738.pdf
SML4752HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 1W DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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P6SMB510A01HM3_C/I p6smb.pdf
P6SMB510A01HM3_C/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB510A01HM3_A/I p6smb.pdf
P6SMB510A01HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB510AHM3_A/H p6smb.pdf
P6SMB510AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB510AHM3_A/I p6smb.pdf
P6SMB510AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-45EPS08L-M3 vs-45epsl-m3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: NEW INPUT DIODES - TO-247
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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VS-45APS08L-M3 vs-45epsl-m3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: NEW INPUT DIODES - TO-247
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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VS-65APS08L-M3 vs-65epsl-m3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: NEW INPUT DIODES - TO-247
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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SMBJ9.0CAHE3_A/H smbj.pdf
SMBJ9.0CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 15.4VC DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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SMBJ9.0CAHE3_A/I smbj.pdf
SMBJ9.0CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 15.4VC DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
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SML4759A-E3/5A SML4728-SML4764A.pdf
SML4759A-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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SML4759A-E3/5A SML4728-SML4764A.pdf
SML4759A-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
auf Bestellung 2067 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
27+0.77 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.35 EUR
Mindestbestellmenge: 20 Stücke
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BZM55C24-TR bzm55.pdf
BZM55C24-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 220 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
auf Bestellung 9596 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
102+0.2 EUR
196+0.11 EUR
500+0.1 EUR
1000+0.095 EUR
Mindestbestellmenge: 67 Stücke
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GF1D-E3/67A gf1x.pdf
GF1D-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 7075 Stücke:
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RGF1DHE3/67A rgf1.pdf
RGF1DHE3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGF1DHE3/67A rgf1.pdf
RGF1DHE3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GF1D-2HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GF1D-2HE3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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S1K-E3/5AT s1.pdf
S1K-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1K-E3/5AT s1.pdf
S1K-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MMSZ4694-E3-08 mmsz4681.pdf
MMSZ4694-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
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3000+0.098 EUR
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MMSZ4694-E3-08 mmsz4681.pdf
MMSZ4694-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
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S1BHE3_A/H s1.pdf
S1BHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
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1800+0.19 EUR
5400+0.17 EUR
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S1BHE3_A/H s1.pdf
S1BHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
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42+0.5 EUR
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