Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41207) > Seite 546 nach 687
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BZX584C18-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 200MW SOD523Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 28336 Stücke: Lieferzeit 10-14 Tag (e) |
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P4SMA130AHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 111VWM 179VC DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16JTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 16A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 145pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 765 Stücke: Lieferzeit 10-14 Tag (e) |
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FESB16DTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16ATHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16DTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16CTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16FTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16HTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 500V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16ATHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16GTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16BTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16FTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16GTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16BTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16CTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16JTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 16A TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 145pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FESB16HTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: 16A,500V,50NS,SINGLE UF RECT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ZMM5242B-7 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 500MW MINI MELF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ZMM5242B-13 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 500MW MINI MELF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TPSMA30AHE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 25.6VWM 41.4V DO214ACQualification: AEC-Q101 Grade: Automotive Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 25.6V Current - Peak Pulse (10/1000µs): 9.7A Operating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 41.4V Voltage - Breakdown (Min): 28.5V Unidirectional Channels: 1 |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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TPSMA30AHE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 25.6VWM 41.4V DO214ACQualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 41.4V Voltage - Breakdown (Min): 28.5V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 25.6V Current - Peak Pulse (10/1000µs): 9.7A Operating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 1948 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-161MT180C | Vishay General Semiconductor - Diodes Division |
Description: MTC - THREE PHASE BRIDGEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 257 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 300 A Current - Reverse Leakage @ Vr: 12 mA @ 1800 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-301MT180C | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.8KV 300ACurrent - Reverse Leakage @ Vr: 12 mA @ 1800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A Current - Average Rectified (Io): 300 A Voltage - Peak Reverse (Max): 1.8 kV Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
auf Bestellung 174 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-131MT180C | Vishay General Semiconductor - Diodes Division |
Description: MTC - THREE PHASE BRIDGECurrent - Reverse Leakage @ Vr: 12 mA @ 1800 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A Current - Average Rectified (Io): 218 A Voltage - Peak Reverse (Max): 1.8 kV Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10ETS12-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
auf Bestellung 7744 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCJ12CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 19.9VC DO214ABPower Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 19.9V Voltage - Breakdown (Min): 13.3V Bidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 12V Current - Peak Pulse (10/1000µs): 75.4A Applications: Automotive, Telecom Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TZMC30-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW SOD80Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 22 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-80 MiniMELF Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TZMC30-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW SOD80Qualification: AEC-Q101 Grade: Automotive Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 22 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-80 MiniMELF Impedance (Max) (Zzt): 80 Ohms |
auf Bestellung 4015 Stücke: Lieferzeit 10-14 Tag (e) |
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P4SMA27AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 23.1VWM 37.5VC DO214ACQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 37.5V Voltage - Breakdown (Min): 25.7V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 23.1V Current - Peak Pulse (10/1000µs): 10.7A Applications: Telecom Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P4SMA27AHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 23.1VWM 37.5VC DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P4SMA27AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 23.1VWM 37.5VC DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P4SMA27AHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 23.1VWM 37.5VC DO214ACPart Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 37.5V Voltage - Breakdown (Min): 25.7V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 23.1V Current - Peak Pulse (10/1000µs): 10.7A Applications: Automotive, Telecom Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VS-EPX6007L-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 650V 60A TO247ADPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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SL23-7001HE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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12CWQ03FNTR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 30V 6A DPAKPackaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 3 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 6 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-252AA (DPAK) Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VS-60EPF12-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 60A TO247ACPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AC-2L Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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| VS-10ETS12THM3 | Vishay General Semiconductor - Diodes Division |
Description: RECTIFIER DIODE 10A 1200V TO-220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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S5MS-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 1000V 1.6A DO214ABOperating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 1.6A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A Voltage - DC Reverse (Vr) (Max): 1000 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S5MS-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 1000V 1.6A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 1.6A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
auf Bestellung 1460 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84B15-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 300MW SOT23-3Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2% Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V Power - Max: 300 mW Part Status: Active Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84B15-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 300MW SOT23-3Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V Power - Max: 300 mW Part Status: Active Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2% Packaging: Cut Tape (CT) |
auf Bestellung 3018 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52C3V3-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 410MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-123 Part Status: Last Time Buy Power - Max: 410 mW Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52C3V3-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 410MW SOD123Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-123 Part Status: Last Time Buy Power - Max: 410 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 129 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX55C30-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW DO204AHPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 22 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX55C30-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW DO204AHPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 22 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 18107 Stücke: Lieferzeit 10-14 Tag (e) |
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SMPZ3919B-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW DO220AACurrent - Reverse Leakage @ Vr: 200 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 5 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±5% Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMPZ3919B-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW DO220AACurrent - Reverse Leakage @ Vr: 200 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 5 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±5% Packaging: Cut Tape (CT) |
auf Bestellung 5984 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27B39P-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 800MW DO219AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZD27B39P-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 800MW DO219AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZD27B39P-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 800MW DO219AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZD27B39P-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 800MW DO219ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 800 mW Grade: Automotive Supplier Device Package: DO-219AB (SMF) Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 39 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZD27B39P-M3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 800MW DO219AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZD27B39P-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 800MW DO219AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VS-APH3006LHN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO247ADQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247AD Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 26 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| VS-APH3006L-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO247ADCurrent - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247AD Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 26 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MURS460-E3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2.4A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 2.4A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MURS460-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2.4A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 2.4A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MURS460-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2.4A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 2.4A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MURS460-E3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2.4A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 2.4A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BZX584C18-HG3-08 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 18V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28336 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 94+ | 0.23 EUR |
| 202+ | 0.1 EUR |
| 500+ | 0.096 EUR |
| 1000+ | 0.07 EUR |
| 2000+ | 0.069 EUR |
| P4SMA130AHM3/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 111VWM 179VC DO214AC
Description: TVS DIODE 111VWM 179VC DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FESB16JTHE3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 765 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.97 EUR |
| 10+ | 3.3 EUR |
| 100+ | 2.62 EUR |
| FESB16DTHE3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
Description: DIODE GEN PURP 200V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16ATHE3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16DTHE3_A/P |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
Description: DIODE GEN PURP 200V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16CTHE3_A/P |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16FTHE3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
Description: DIODE GEN PURP 300V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16HTHE3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 16A TO263AB
Description: DIODE GEN PURP 500V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16ATHE3_A/P |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16GTHE3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Description: DIODE GEN PURP 400V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16BTHE3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16FTHE3_A/P |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
Description: DIODE GEN PURP 300V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16GTHE3_A/P |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Description: DIODE GEN PURP 400V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16BTHE3_A/P |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16CTHE3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16JTHE3_A/P |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16HTHE3_A/P |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: 16A,500V,50NS,SINGLE UF RECT
Description: 16A,500V,50NS,SINGLE UF RECT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZMM5242B-7 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW MINI MELF
Description: DIODE ZENER 12V 500MW MINI MELF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZMM5242B-13 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW MINI MELF
Description: DIODE ZENER 12V 500MW MINI MELF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPSMA30AHE3_B/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 9.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Description: TVS DIODE 25.6VWM 41.4V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 9.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1800+ | 0.18 EUR |
| TPSMA30AHE3_B/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 9.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: TVS DIODE 25.6VWM 41.4V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 9.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 1948 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 39+ | 0.55 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.29 EUR |
| VS-161MT180C |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: MTC - THREE PHASE BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 257 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 300 A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
Description: MTC - THREE PHASE BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 257 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 300 A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 129.08 EUR |
| 12+ | 117.35 EUR |
| VS-301MT180C |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.8KV 300A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Average Rectified (Io): 300 A
Voltage - Peak Reverse (Max): 1.8 kV
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: BRIDGE RECT 3PHASE 1.8KV 300A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Average Rectified (Io): 300 A
Voltage - Peak Reverse (Max): 1.8 kV
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 192.77 EUR |
| 12+ | 152.44 EUR |
| VS-131MT180C |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: MTC - THREE PHASE BRIDGE
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A
Current - Average Rectified (Io): 218 A
Voltage - Peak Reverse (Max): 1.8 kV
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MTC - THREE PHASE BRIDGE
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A
Current - Average Rectified (Io): 218 A
Voltage - Peak Reverse (Max): 1.8 kV
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 121.75 EUR |
| 12+ | 110.67 EUR |
| VS-10ETS12-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE STANDARD 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 7744 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.33 EUR |
| 50+ | 2.15 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.52 EUR |
| SMCJ12CAHM3_A/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 75.4A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: TVS DIODE 12VWM 19.9VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 75.4A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3400 Stücke
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| TZMC30-GS18 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 30V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
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| TZMC30-GS18 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
Description: DIODE ZENER 30V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
auf Bestellung 4015 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 0.25 EUR |
| 118+ | 0.18 EUR |
| 272+ | 0.077 EUR |
| 500+ | 0.074 EUR |
| 1000+ | 0.065 EUR |
| 2000+ | 0.064 EUR |
| P4SMA27AHM3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
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| P4SMA27AHM3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4SMA27AHM3_A/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7200 Stücke
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Stück im Wert von UAH
| P4SMA27AHM3/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-EPX6007L-N3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 650V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE GEN PURP 650V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.69 EUR |
| 10+ | 6.9 EUR |
| 100+ | 5.65 EUR |
| SL23-7001HE3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY
Description: DIODE SCHOTTKY
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 12CWQ03FNTR |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V 6A DPAK
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: DIODE ARRAY SCHOTTKY 30V 6A DPAK
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-60EPF12-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE STANDARD 1200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.42 EUR |
| 25+ | 12.42 EUR |
| VS-10ETS12THM3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER DIODE 10A 1200V TO-220
Description: RECTIFIER DIODE 10A 1200V TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S5MS-E3/9AT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.6A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Description: DIODE STD 1000V 1.6A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S5MS-E3/9AT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.6A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE STD 1000V 1.6A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 35+ | 0.62 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| BZX84B15-HE3-08 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOT23-3
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Description: DIODE ZENER 15V 300MW SOT23-3
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84B15-HE3-08 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 15V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 3018 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| 106+ | 0.2 EUR |
| 157+ | 0.13 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.092 EUR |
| BZT52C3V3-HE3-08 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52C3V3-HE3-08 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 76+ | 0.27 EUR |
| 123+ | 0.17 EUR |
| BZX55C30-TR |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.17 EUR |
| BZX55C30-TR |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 39+ | 0.55 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.2 EUR |
| 5000+ | 0.18 EUR |
| SMPZ3919B-M3/84A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 5.6V 500MW DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| SMPZ3919B-M3/84A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 5.6V 500MW DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 5984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 0.61 EUR |
| 53+ | 0.4 EUR |
| 107+ | 0.2 EUR |
| 500+ | 0.19 EUR |
| BZD27B39P-M3-08 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27B39P-E3-18 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZD27B39P-HE3-08 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZD27B39P-HE3-18 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 39V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZD27B39P-M3-18 |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZD27B39P-E3-08 |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VS-APH3006LHN3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE STANDARD 600V 30A TO247AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VS-APH3006L-N3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AD
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE STANDARD 600V 30A TO247AD
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MURS460-E3/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MURS460-M3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MURS460-M3/H |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MURS460-E3/I |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH



















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