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V10K120CHM3/I V10K120CHM3/I Vishay General Semiconductor - Diodes Division v10k120c.pdf Description: 10A, 120V, FLATPAK TRENCH SKY RE
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V10K202DUHM3/H V10K202DUHM3/H Vishay General Semiconductor - Diodes Division v10k202du.pdf Description: 10A, 200V,FLATPAK5X6,PARALLEL DU
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V10K170C-M3/H V10K170C-M3/H Vishay General Semiconductor - Diodes Division v10k170c.pdf Description: DIODE ARR SCHOTT 170V 2.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 170 V
Qualification: AEC-Q101
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V10K150C-M3/I V10K150C-M3/I Vishay General Semiconductor - Diodes Division v10k150c.pdf Description: DIODE ARR SCHOTT 150V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Qualification: AEC-Q101
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V10K60C-M3/I V10K60C-M3/I Vishay General Semiconductor - Diodes Division v10k60c.pdf Description: DIODE ARR SCHOT 60V 4.6A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.6A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
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V10KM45CHM3/H V10KM45CHM3/H Vishay General Semiconductor - Diodes Division v10km45c.pdf Description: 10A, 45V, FLATPAK TRENCH SKY REC
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V10KL45CHM3/I V10KL45CHM3/I Vishay General Semiconductor - Diodes Division v10kl45c.pdf Description: 10A, 45V, FLATPAK TRENCH SKY REC
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V10KM100CHM3/H V10KM100CHM3/H Vishay General Semiconductor - Diodes Division v10km100c.pdf Description: DIODE ARR SCHOTTKY 100V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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V10K202DUHM3/I V10K202DUHM3/I Vishay General Semiconductor - Diodes Division v10k202du.pdf Description: 10A, 200V,FLATPAK5X6,PARALLEL DU
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V10KM120CHM3/I V10KM120CHM3/I Vishay General Semiconductor - Diodes Division v10km120c.pdf Description: 10A, 120V, FLATPAK TRENCH SKY RE
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V10KM100C-M3/I V10KM100C-M3/I Vishay General Semiconductor - Diodes Division v10km100c.pdf Description: DIODE ARR SCHOTTKY 100V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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V10KM100C-M3/H V10KM100C-M3/H Vishay General Semiconductor - Diodes Division v10km100c.pdf Description: DIODE ARR SCHOTTKY 100V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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V10KM45C-M3/I V10KM45C-M3/I Vishay General Semiconductor - Diodes Division v10km45c.pdf Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Qualification: AEC-Q101
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V10KM150C-M3/H V10KM150C-M3/H Vishay General Semiconductor - Diodes Division v10km150c.pdf Description: 10A, 150V, FLATPAK TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 150
Current - Reverse Leakage @ Vr: 200
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V10K170CHM3/I V10K170CHM3/I Vishay General Semiconductor - Diodes Division v10k170c.pdf Description: 10A, 170V,FLATPAK5X6 DUAL TRENCH
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V10K100C-M3/I V10K100C-M3/I Vishay General Semiconductor - Diodes Division v10k100c.pdf Description: DIODE ARR SCHOTT 100V 3.9A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Qualification: AEC-Q101
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V10K60C-M3/H V10K60C-M3/H Vishay General Semiconductor - Diodes Division v10k60c.pdf Description: 10A, 60V, FLATPAK TRENCH SKY REC
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SM5S16HE3/2D SM5S16HE3/2D Vishay General Semiconductor - Diodes Division SM5S10_-_SM5S36A_July,22,2016.pdf Description: TVS DIODE 16VWM 28.8VC DO218AB
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SM5S26A-71HE4_A/J SM5S26A-71HE4_A/J Vishay General Semiconductor - Diodes Division sm5s.pdf Description: TVS DIODE 26VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BZX84B12-E3-18 BZX84B12-E3-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZX84B12-E3-18 BZX84B12-E3-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZT52B3V9-E3-08 BZT52B3V9-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 3.9V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
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BZT52B3V9-E3-08 BZT52B3V9-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 3.9V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
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ES3D-E3/57T ES3D-E3/57T Vishay General Semiconductor - Diodes Division es3.pdf Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ES3D-E3/57T ES3D-E3/57T Vishay General Semiconductor - Diodes Division es3.pdf Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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SAC10-E3/54 SAC10-E3/54 Vishay General Semiconductor - Diodes Division sac.pdf Description: TVS DIODE 10VWM 16.3VC DO204AC
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SAC10-E3/54 SAC10-E3/54 Vishay General Semiconductor - Diodes Division sac.pdf Description: TVS DIODE 10VWM 16.3VC DO204AC
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VS-E5PX3012L-N3 VS-E5PX3012L-N3 Vishay General Semiconductor - Diodes Division vs-e5px3012l-n3.pdf Description: DIODE FREDS 1200V 30A TO-247
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VS-E5PX3012LHN3 VS-E5PX3012LHN3 Vishay General Semiconductor - Diodes Division vs-e5px3012lhn3.pdf Description: FREDS - TO-247G5,30A,1200V, LOW
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1N5243B-T 1N5243B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
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VS-C5PH6006LHN3 VS-C5PH6006LHN3 Vishay General Semiconductor - Diodes Division vs-c5ph6006lhn3.pdf Description: DIODE ARRAY GP 600V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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VS-C5PX6006LHN3 VS-C5PX6006LHN3 Vishay General Semiconductor - Diodes Division vs-c5px6006lhn3.pdf Description: 2X30A, 600V, "X" SERIES GEN5 FRE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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VS-C5PW6006LHN3 VS-C5PW6006LHN3 Vishay General Semiconductor - Diodes Division vs-c5pw6006lhn3.pdf Description: DIODE ARRAY GP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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VS-EPU6006L-N3 VS-EPU6006L-N3 Vishay General Semiconductor - Diodes Division vs-epu6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
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VS-E5PX6006LHN3 VS-E5PX6006LHN3 Vishay General Semiconductor - Diodes Division vs-e5px6006lhn3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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VS-E5PX6006L-N3 VS-E5PX6006L-N3 Vishay General Semiconductor - Diodes Division vs-e5px6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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VS-E5PW6006LHN3 VS-E5PW6006LHN3 Vishay General Semiconductor - Diodes Division vs-e5pw6006lhn3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1545 Stücke:
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50+5.62 EUR
100+4.82 EUR
500+4.28 EUR
1000+3.67 EUR
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VS-CPU6006L-N3 VS-CPU6006L-N3 Vishay General Semiconductor - Diodes Division vs-cpu6006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 413 Stücke:
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VS-C4PU6006L-N3 VS-C4PU6006L-N3 Vishay General Semiconductor - Diodes Division vs-c4pu6006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 493 Stücke:
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VS-CPU6006LHN3 VS-CPU6006LHN3 Vishay General Semiconductor - Diodes Division vs-cpu6006lhn3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
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3+6.27 EUR
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PLZ15C-HG3_A/H PLZ15C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 15V 500MW DO219AC
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PLZ15C-HG3_A/H PLZ15C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 15V 500MW DO219AC
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PLZ16A-HG3_A/H PLZ16A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
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4500+0.08 EUR
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13500+0.07 EUR
22500+0.06 EUR
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PLZ16A-HG3_A/H PLZ16A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 22513 Stücke:
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500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
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PLZ16C-HG3_A/H PLZ16C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
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4500+0.10 EUR
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PLZ16C-HG3_A/H PLZ16C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 8810 Stücke:
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32+0.56 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.10 EUR
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PLZ24D-HG3_A/H PLZ24D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
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4500+0.07 EUR
9000+0.05 EUR
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PLZ24D-HG3_A/H PLZ24D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 22527 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
45+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.10 EUR
Mindestbestellmenge: 31
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PLZ33C-HG3_A/H PLZ33C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ33C-HG3_A/H PLZ33C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
auf Bestellung 40 Stücke:
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29+0.62 EUR
36+0.50 EUR
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PLZ16B-HG3_A/H PLZ16B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ16B-HG3_A/H PLZ16B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
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VS-E5TX1506S2L-M3 VS-E5TX1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1506s2l-n3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.52 EUR
1600+1.29 EUR
Mindestbestellmenge: 800
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VS-E5TX1506S2L-M3 VS-E5TX1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1506s2l-n3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
10+2.26 EUR
100+1.80 EUR
Mindestbestellmenge: 7
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VS-E5TH2106S2L-M3 VS-E5TH2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.29 EUR
1600+1.27 EUR
Mindestbestellmenge: 800
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VS-E5TH2106S2L-M3 VS-E5TH2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.14 EUR
10+2.73 EUR
100+1.94 EUR
Mindestbestellmenge: 5
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VS-E5TH1506S2L-M3 VS-E5TH1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1506s2l-m3_.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.15 EUR
Mindestbestellmenge: 800
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VS-E5TH1506S2L-M3 VS-E5TH1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1506s2l-m3_.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
Mindestbestellmenge: 7
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VS-E5TX2112S2L-M3 VS-E5TX2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.48 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2112S2L-M3 VS-E5TX2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.52 EUR
10+2.93 EUR
100+2.33 EUR
Mindestbestellmenge: 5
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V10K120CHM3/I v10k120c.pdf
V10K120CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 10A, 120V, FLATPAK TRENCH SKY RE
Produkt ist nicht verfügbar
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V10K202DUHM3/H v10k202du.pdf
V10K202DUHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 10A, 200V,FLATPAK5X6,PARALLEL DU
Produkt ist nicht verfügbar
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V10K170C-M3/H v10k170c.pdf
V10K170C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 170V 2.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 170 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10K150C-M3/I v10k150c.pdf
V10K150C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10K60C-M3/I v10k60c.pdf
V10K60C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 4.6A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.6A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10KM45CHM3/H v10km45c.pdf
V10KM45CHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 10A, 45V, FLATPAK TRENCH SKY REC
Produkt ist nicht verfügbar
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V10KL45CHM3/I v10kl45c.pdf
V10KL45CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 10A, 45V, FLATPAK TRENCH SKY REC
Produkt ist nicht verfügbar
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V10KM100CHM3/H v10km100c.pdf
V10KM100CHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 100V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10K202DUHM3/I v10k202du.pdf
V10K202DUHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 10A, 200V,FLATPAK5X6,PARALLEL DU
Produkt ist nicht verfügbar
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V10KM120CHM3/I v10km120c.pdf
V10KM120CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 10A, 120V, FLATPAK TRENCH SKY RE
Produkt ist nicht verfügbar
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V10KM100C-M3/I v10km100c.pdf
V10KM100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 100V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10KM100C-M3/H v10km100c.pdf
V10KM100C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 100V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10KM45C-M3/I v10km45c.pdf
V10KM45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10KM150C-M3/H v10km150c.pdf
V10KM150C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 10A, 150V, FLATPAK TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 150
Current - Reverse Leakage @ Vr: 200
Produkt ist nicht verfügbar
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V10K170CHM3/I v10k170c.pdf
V10K170CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 10A, 170V,FLATPAK5X6 DUAL TRENCH
Produkt ist nicht verfügbar
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V10K100C-M3/I v10k100c.pdf
V10K100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 3.9A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10K60C-M3/H v10k60c.pdf
V10K60C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 10A, 60V, FLATPAK TRENCH SKY REC
Produkt ist nicht verfügbar
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SM5S16HE3/2D SM5S10_-_SM5S36A_July,22,2016.pdf
SM5S16HE3/2D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 28.8VC DO218AB
Produkt ist nicht verfügbar
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SM5S26A-71HE4_A/J sm5s.pdf
SM5S26A-71HE4_A/J
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B12-E3-18 bzx84_series.pdf
BZX84B12-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX84B12-E3-18 bzx84_series.pdf
BZX84B12-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 9854 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
112+0.16 EUR
216+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.06 EUR
Mindestbestellmenge: 77
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BZT52B3V9-E3-08 bzt52_series.pdf
BZT52B3V9-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
9000+0.07 EUR
Mindestbestellmenge: 3000
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BZT52B3V9-E3-08 bzt52_series.pdf
BZT52B3V9-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
auf Bestellung 14710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
102+0.17 EUR
500+0.14 EUR
1000+0.10 EUR
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ES3D-E3/57T es3.pdf
ES3D-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 9350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.30 EUR
1700+0.29 EUR
Mindestbestellmenge: 850
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ES3D-E3/57T es3.pdf
ES3D-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 10481 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
28+0.64 EUR
100+0.59 EUR
Mindestbestellmenge: 17
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SAC10-E3/54 sac.pdf
SAC10-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 16.3VC DO204AC
Produkt ist nicht verfügbar
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SAC10-E3/54 sac.pdf
SAC10-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 16.3VC DO204AC
Produkt ist nicht verfügbar
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VS-E5PX3012L-N3 vs-e5px3012l-n3.pdf
VS-E5PX3012L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FREDS 1200V 30A TO-247
Produkt ist nicht verfügbar
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VS-E5PX3012LHN3 vs-e5px3012lhn3.pdf
VS-E5PX3012LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: FREDS - TO-247G5,30A,1200V, LOW
Produkt ist nicht verfügbar
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1N5243B-T 1n5221.pdf
1N5243B-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-C5PH6006LHN3 vs-c5ph6006lhn3.pdf
VS-C5PH6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.68 EUR
50+5.25 EUR
100+4.96 EUR
500+4.30 EUR
1000+3.84 EUR
Mindestbestellmenge: 2
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VS-C5PX6006LHN3 vs-c5px6006lhn3.pdf
VS-C5PX6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2X30A, 600V, "X" SERIES GEN5 FRE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 1575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.71 EUR
10+6.48 EUR
100+5.25 EUR
500+4.66 EUR
1000+3.99 EUR
Mindestbestellmenge: 3
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VS-C5PW6006LHN3 vs-c5pw6006lhn3.pdf
VS-C5PW6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.74 EUR
50+6.14 EUR
100+5.26 EUR
500+4.67 EUR
1000+4.00 EUR
Mindestbestellmenge: 3
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VS-EPU6006L-N3 vs-epu6006l-n3.pdf
VS-EPU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
auf Bestellung 307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+3.62 EUR
100+2.91 EUR
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VS-E5PX6006LHN3 vs-e5px6006lhn3.pdf
VS-E5PX6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 490 Stücke:
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Anzahl Preis
3+7.08 EUR
10+6.35 EUR
100+5.20 EUR
Mindestbestellmenge: 3
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VS-E5PX6006L-N3 vs-e5px6006l-n3.pdf
VS-E5PX6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.65 EUR
10+5.07 EUR
100+4.16 EUR
Mindestbestellmenge: 4
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VS-E5PW6006LHN3 vs-e5pw6006lhn3.pdf
VS-E5PW6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.09 EUR
50+5.62 EUR
100+4.82 EUR
500+4.28 EUR
1000+3.67 EUR
Mindestbestellmenge: 3
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VS-CPU6006L-N3 vs-cpu6006l-n3.pdf
VS-CPU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 413 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.82 EUR
25+2.69 EUR
100+2.61 EUR
Mindestbestellmenge: 4
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VS-C4PU6006L-N3 vs-c4pu6006l-n3.pdf
VS-C4PU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.77 EUR
10+4.29 EUR
100+3.45 EUR
Mindestbestellmenge: 4
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VS-CPU6006LHN3 vs-cpu6006lhn3.pdf
VS-CPU6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.27 EUR
10+5.63 EUR
100+4.61 EUR
Mindestbestellmenge: 3
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PLZ15C-HG3_A/H plzseries.pdf
PLZ15C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ15C-HG3_A/H plzseries.pdf
PLZ15C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO219AC
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PLZ16A-HG3_A/H plzseries.pdf
PLZ16A-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.08 EUR
9000+0.07 EUR
13500+0.07 EUR
22500+0.06 EUR
Mindestbestellmenge: 4500
Im Einkaufswagen  Stück im Wert von  UAH
PLZ16A-HG3_A/H plzseries.pdf
PLZ16A-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 22513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
87+0.20 EUR
130+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
PLZ16C-HG3_A/H plzseries.pdf
PLZ16C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.10 EUR
Mindestbestellmenge: 4500
Im Einkaufswagen  Stück im Wert von  UAH
PLZ16C-HG3_A/H plzseries.pdf
PLZ16C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 8810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.10 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
PLZ24D-HG3_A/H plzseries.pdf
PLZ24D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.07 EUR
9000+0.05 EUR
Mindestbestellmenge: 4500
Im Einkaufswagen  Stück im Wert von  UAH
PLZ24D-HG3_A/H plzseries.pdf
PLZ24D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 22527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
45+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.10 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
PLZ33C-HG3_A/H plzseries.pdf
PLZ33C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ33C-HG3_A/H plzseries.pdf
PLZ33C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
36+0.50 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
PLZ16B-HG3_A/H plzseries.pdf
PLZ16B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ16B-HG3_A/H plzseries.pdf
PLZ16B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX1506S2L-M3 vs-e5tx1506s2l-n3.pdf
VS-E5TX1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.52 EUR
1600+1.29 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX1506S2L-M3 vs-e5tx1506s2l-n3.pdf
VS-E5TX1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
10+2.26 EUR
100+1.80 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH2106S2L-M3 vs-e5th2106s2l-m3.pdf
VS-E5TH2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.29 EUR
1600+1.27 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH2106S2L-M3 vs-e5th2106s2l-m3.pdf
VS-E5TH2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
10+2.73 EUR
100+1.94 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH1506S2L-M3 vs-e5th1506s2l-m3_.pdf
VS-E5TH1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.15 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH1506S2L-M3 vs-e5th1506s2l-m3_.pdf
VS-E5TH1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2112S2L-M3 vs-e5tx2112s2l-m3.pdf
VS-E5TX2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.48 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2112S2L-M3 vs-e5tx2112s2l-m3.pdf
VS-E5TX2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.93 EUR
100+2.33 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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