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VS-C5PW6006LHN3 VS-C5PW6006LHN3 Vishay General Semiconductor - Diodes Division vs-c5pw6006lhn3.pdf Description: DIODE ARRAY GP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1567 Stücke:
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3+7.74 EUR
50+6.14 EUR
100+5.26 EUR
500+4.67 EUR
1000+4 EUR
Mindestbestellmenge: 3
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VS-EPU6006L-N3 VS-EPU6006L-N3 Vishay General Semiconductor - Diodes Division vs-epu6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
auf Bestellung 307 Stücke:
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100+2.91 EUR
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VS-E5PX6006LHN3 VS-E5PX6006LHN3 Vishay General Semiconductor - Diodes Division vs-e5px6006lhn3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 490 Stücke:
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3+7.08 EUR
10+6.35 EUR
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VS-E5PX6006L-N3 VS-E5PX6006L-N3 Vishay General Semiconductor - Diodes Division vs-e5px6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 110 Stücke:
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4+5.65 EUR
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VS-E5PW6006LHN3 VS-E5PW6006LHN3 Vishay General Semiconductor - Diodes Division vs-e5pw6006lhn3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1545 Stücke:
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3+7.09 EUR
50+5.62 EUR
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500+4.28 EUR
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VS-CPU6006L-N3 VS-CPU6006L-N3 Vishay General Semiconductor - Diodes Division vs-cpu6006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 413 Stücke:
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VS-C4PU6006L-N3 VS-C4PU6006L-N3 Vishay General Semiconductor - Diodes Division vs-c4pu6006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 493 Stücke:
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4+4.77 EUR
10+4.29 EUR
100+3.45 EUR
Mindestbestellmenge: 4
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VS-CPU6006LHN3 VS-CPU6006LHN3 Vishay General Semiconductor - Diodes Division vs-cpu6006lhn3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
auf Bestellung 471 Stücke:
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3+6.27 EUR
10+5.63 EUR
100+4.61 EUR
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PLZ15C-HG3_A/H PLZ15C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 15V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ15C-HG3_A/H PLZ15C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 15V 500MW DO219AC
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PLZ16A-HG3_A/H PLZ16A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
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4500+0.075 EUR
9000+0.068 EUR
13500+0.065 EUR
22500+0.061 EUR
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PLZ16A-HG3_A/H PLZ16A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 22513 Stücke:
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59+0.3 EUR
87+0.2 EUR
130+0.14 EUR
500+0.1 EUR
1000+0.093 EUR
2000+0.084 EUR
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PLZ16C-HG3_A/H PLZ16C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
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4500+0.095 EUR
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PLZ16C-HG3_A/H PLZ16C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 8810 Stücke:
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32+0.56 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.095 EUR
Mindestbestellmenge: 32
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PLZ24D-HG3_A/H PLZ24D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
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4500+0.068 EUR
9000+0.054 EUR
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PLZ24D-HG3_A/H PLZ24D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 22527 Stücke:
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31+0.58 EUR
45+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.097 EUR
Mindestbestellmenge: 31
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PLZ33C-HG3_A/H PLZ33C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ33C-HG3_A/H PLZ33C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
auf Bestellung 40 Stücke:
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29+0.62 EUR
36+0.5 EUR
Mindestbestellmenge: 29
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PLZ16B-HG3_A/H PLZ16B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ16B-HG3_A/H PLZ16B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
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VS-E5TX1506S2L-M3 VS-E5TX1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1506s2l-n3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.52 EUR
1600+1.29 EUR
Mindestbestellmenge: 800
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VS-E5TX1506S2L-M3 VS-E5TX1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1506s2l-n3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
10+2.26 EUR
100+1.8 EUR
Mindestbestellmenge: 7
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VS-E5TH2106S2L-M3 VS-E5TH2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.29 EUR
1600+1.27 EUR
Mindestbestellmenge: 800
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VS-E5TH2106S2L-M3 VS-E5TH2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.14 EUR
10+2.73 EUR
100+1.94 EUR
Mindestbestellmenge: 5
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VS-E5TH1506S2L-M3 VS-E5TH1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1506s2l-m3_.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.15 EUR
Mindestbestellmenge: 800
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VS-E5TH1506S2L-M3 VS-E5TH1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1506s2l-m3_.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
Mindestbestellmenge: 7
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VS-E5TX2112S2L-M3 VS-E5TX2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.48 EUR
Mindestbestellmenge: 800
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VS-E5TX2112S2L-M3 VS-E5TX2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.52 EUR
10+2.93 EUR
100+2.33 EUR
Mindestbestellmenge: 5
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VS-E5TX1512S2L-M3 VS-E5TX1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1512s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX1512S2L-M3 VS-E5TX1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1512s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1061 Stücke:
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10+2.78 EUR
100+2.21 EUR
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VS-E5TH1512S2L-M3 VS-E5TH1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1512s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.4 EUR
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VS-E5TH1512S2L-M3 VS-E5TH1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1512s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1154 Stücke:
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5+3.57 EUR
10+2.97 EUR
100+2.37 EUR
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VS-E5TH3006S2L-M3 VS-E5TH3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3006s2l-m3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH3006S2L-M3 VS-E5TH3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3006s2l-m3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 156 Stücke:
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5+4.03 EUR
10+2.75 EUR
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VS-E5TX3012S2L-M3 VS-E5TX3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3012S2L-M3 VS-E5TX3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1510 Stücke:
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4+5.05 EUR
10+3.56 EUR
100+2.65 EUR
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VS-E5TH3012S2L-M3 VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.12 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH3012S2L-M3 VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1036 Stücke:
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4+5.79 EUR
10+3.86 EUR
100+2.88 EUR
Mindestbestellmenge: 4
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VS-E5TX3006S2L-M3 VS-E5TX3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2l-m3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.5 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3006S2L-M3 VS-E5TX3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2l-m3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 1597 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
10+2.96 EUR
100+2.18 EUR
Mindestbestellmenge: 5
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VS-E5TX2106S2L-M3 VS-E5TX2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2106s2l-m3.pdf Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2106S2L-M3 VS-E5TX2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2106s2l-m3.pdf Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.17 EUR
10+2.69 EUR
100+1.85 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH2112S2L-M3 VS-E5TH2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.63 EUR
1600+1.57 EUR
Mindestbestellmenge: 800
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VS-E5TH2112S2L-M3 VS-E5TH2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 2139 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.1 EUR
10+3.32 EUR
100+2.3 EUR
Mindestbestellmenge: 4
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VS-2N682 VS-2N682 Vishay General Semiconductor - Diodes Division vs-2n681-2n5205series.pdf Description: SCR 50V 25A TO208AA
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 145A, 150A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 6.5 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 50 V
auf Bestellung 91 Stücke:
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2+17.55 EUR
10+12.66 EUR
Mindestbestellmenge: 2
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BZX55B30-TAP BZX55B30-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 27904 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
136+0.13 EUR
301+0.059 EUR
500+0.055 EUR
1000+0.051 EUR
2000+0.05 EUR
5000+0.049 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
BZX55B30-TAP BZX55B30-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V20PWM45HM3/I V20PWM45HM3/I Vishay General Semiconductor - Diodes Division v20pwm45.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V20PWM45HM3/I V20PWM45HM3/I Vishay General Semiconductor - Diodes Division v20pwm45.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 4618 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
14+1.32 EUR
100+0.92 EUR
500+0.74 EUR
1000+0.68 EUR
2000+0.63 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
V40PW45C-M3/I V40PW45C-M3/I Vishay General Semiconductor - Diodes Division v40pw45c.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V40PW45C-M3/I V40PW45C-M3/I Vishay General Semiconductor - Diodes Division v40pw45c.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
auf Bestellung 1893 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
10+1.91 EUR
100+1.49 EUR
500+1.26 EUR
1000+1.03 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
V20KL45-M3/H V20KL45-M3/H Vishay General Semiconductor - Diodes Division v20kl45.pdf Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.47 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
V20KL45-M3/H V20KL45-M3/H Vishay General Semiconductor - Diodes Division v20kl45.pdf Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 3265 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
15+1.24 EUR
100+0.88 EUR
500+0.68 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
V40DM45C-M3/I V40DM45C-M3/I Vishay General Semiconductor - Diodes Division v40dm45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Produkt ist nicht verfügbar
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V40DM45C-M3/I V40DM45C-M3/I Vishay General Semiconductor - Diodes Division v40dm45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
auf Bestellung 1864 Stücke:
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6+3.19 EUR
10+2.65 EUR
100+2.11 EUR
500+1.79 EUR
1000+1.52 EUR
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V40D45C-M3/I V40D45C-M3/I Vishay General Semiconductor - Diodes Division v40d45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
auf Bestellung 1965 Stücke:
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6+3.22 EUR
10+2.68 EUR
100+2.13 EUR
500+1.8 EUR
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TZMC3V9-GS18 TZMC3V9-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 3.9V 500MW SOD80
auf Bestellung 10000 Stücke:
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10000+0.054 EUR
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TZMC3V9-GS18 TZMC3V9-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 3.9V 500MW SOD80
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44+0.4 EUR
52+0.34 EUR
100+0.18 EUR
500+0.12 EUR
1000+0.081 EUR
2000+0.073 EUR
5000+0.064 EUR
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VS-8ETH06S-M3 VS-8ETH06S-M3 Vishay General Semiconductor - Diodes Division vs-8eth06s-m3.pdf Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 8094 Stücke:
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9+2.01 EUR
50+0.93 EUR
100+0.88 EUR
500+0.74 EUR
1000+0.7 EUR
2000+0.67 EUR
5000+0.64 EUR
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SMAJ45AHM3/H SMAJ45AHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-C5PW6006LHN3 vs-c5pw6006lhn3.pdf
VS-C5PW6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1567 Stücke:
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Anzahl Preis
3+7.74 EUR
50+6.14 EUR
100+5.26 EUR
500+4.67 EUR
1000+4 EUR
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VS-EPU6006L-N3 vs-epu6006l-n3.pdf
VS-EPU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
auf Bestellung 307 Stücke:
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Anzahl Preis
5+4.03 EUR
10+3.62 EUR
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VS-E5PX6006LHN3 vs-e5px6006lhn3.pdf
VS-E5PX6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 490 Stücke:
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Anzahl Preis
3+7.08 EUR
10+6.35 EUR
100+5.2 EUR
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VS-E5PX6006L-N3 vs-e5px6006l-n3.pdf
VS-E5PX6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 110 Stücke:
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Anzahl Preis
4+5.65 EUR
10+5.07 EUR
100+4.16 EUR
Mindestbestellmenge: 4
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VS-E5PW6006LHN3 vs-e5pw6006lhn3.pdf
VS-E5PW6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1545 Stücke:
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Anzahl Preis
3+7.09 EUR
50+5.62 EUR
100+4.82 EUR
500+4.28 EUR
1000+3.67 EUR
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VS-CPU6006L-N3 vs-cpu6006l-n3.pdf
VS-CPU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 413 Stücke:
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Anzahl Preis
4+4.82 EUR
25+2.69 EUR
100+2.61 EUR
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VS-C4PU6006L-N3 vs-c4pu6006l-n3.pdf
VS-C4PU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 493 Stücke:
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Anzahl Preis
4+4.77 EUR
10+4.29 EUR
100+3.45 EUR
Mindestbestellmenge: 4
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VS-CPU6006LHN3 vs-cpu6006lhn3.pdf
VS-CPU6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
auf Bestellung 471 Stücke:
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Anzahl Preis
3+6.27 EUR
10+5.63 EUR
100+4.61 EUR
Mindestbestellmenge: 3
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PLZ15C-HG3_A/H plzseries.pdf
PLZ15C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ15C-HG3_A/H plzseries.pdf
PLZ15C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO219AC
auf Bestellung 15 Stücke:
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PLZ16A-HG3_A/H plzseries.pdf
PLZ16A-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.075 EUR
9000+0.068 EUR
13500+0.065 EUR
22500+0.061 EUR
Mindestbestellmenge: 4500
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PLZ16A-HG3_A/H plzseries.pdf
PLZ16A-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 22513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
87+0.2 EUR
130+0.14 EUR
500+0.1 EUR
1000+0.093 EUR
2000+0.084 EUR
Mindestbestellmenge: 59
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PLZ16C-HG3_A/H plzseries.pdf
PLZ16C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.095 EUR
Mindestbestellmenge: 4500
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PLZ16C-HG3_A/H plzseries.pdf
PLZ16C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 8810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.095 EUR
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PLZ24D-HG3_A/H plzseries.pdf
PLZ24D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.068 EUR
9000+0.054 EUR
Mindestbestellmenge: 4500
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PLZ24D-HG3_A/H plzseries.pdf
PLZ24D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 22527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
45+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.097 EUR
Mindestbestellmenge: 31
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PLZ33C-HG3_A/H plzseries.pdf
PLZ33C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Produkt ist nicht verfügbar
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PLZ33C-HG3_A/H plzseries.pdf
PLZ33C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
36+0.5 EUR
Mindestbestellmenge: 29
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PLZ16B-HG3_A/H plzseries.pdf
PLZ16B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ16B-HG3_A/H plzseries.pdf
PLZ16B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
auf Bestellung 20 Stücke:
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VS-E5TX1506S2L-M3 vs-e5tx1506s2l-n3.pdf
VS-E5TX1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.52 EUR
1600+1.29 EUR
Mindestbestellmenge: 800
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VS-E5TX1506S2L-M3 vs-e5tx1506s2l-n3.pdf
VS-E5TX1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
10+2.26 EUR
100+1.8 EUR
Mindestbestellmenge: 7
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VS-E5TH2106S2L-M3 vs-e5th2106s2l-m3.pdf
VS-E5TH2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.29 EUR
1600+1.27 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH2106S2L-M3 vs-e5th2106s2l-m3.pdf
VS-E5TH2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
10+2.73 EUR
100+1.94 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH1506S2L-M3 vs-e5th1506s2l-m3_.pdf
VS-E5TH1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.15 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH1506S2L-M3 vs-e5th1506s2l-m3_.pdf
VS-E5TH1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2112S2L-M3 vs-e5tx2112s2l-m3.pdf
VS-E5TX2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.48 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2112S2L-M3 vs-e5tx2112s2l-m3.pdf
VS-E5TX2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.93 EUR
100+2.33 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX1512S2L-M3 vs-e5tx1512s2l-m3.pdf
VS-E5TX1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX1512S2L-M3 vs-e5tx1512s2l-m3.pdf
VS-E5TX1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1061 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.78 EUR
100+2.21 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH1512S2L-M3 vs-e5th1512s2l-m3.pdf
VS-E5TH1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.4 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH1512S2L-M3 vs-e5th1512s2l-m3.pdf
VS-E5TH1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.97 EUR
100+2.37 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH3006S2L-M3 vs-e5th3006s2l-m3.pdf
VS-E5TH3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH3006S2L-M3 vs-e5th3006s2l-m3.pdf
VS-E5TH3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+2.75 EUR
100+1.97 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3012S2L-M3 vs-e5tx3012s2l-m3.pdf
VS-E5TX3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3012S2L-M3 vs-e5tx3012s2l-m3.pdf
VS-E5TX3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.05 EUR
10+3.56 EUR
100+2.65 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH3012S2L-M3 vs-e5th3012s2l-m3.pdf
VS-E5TH3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.12 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH3012S2L-M3 vs-e5th3012s2l-m3.pdf
VS-E5TH3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.79 EUR
10+3.86 EUR
100+2.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3006S2L-M3 vs-e5tx3006s2l-m3.pdf
VS-E5TX3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.5 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3006S2L-M3 vs-e5tx3006s2l-m3.pdf
VS-E5TX3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 1597 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+2.96 EUR
100+2.18 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2106S2L-M3 vs-e5tx2106s2l-m3.pdf
VS-E5TX2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2106S2L-M3 vs-e5tx2106s2l-m3.pdf
VS-E5TX2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+2.69 EUR
100+1.85 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH2112S2L-M3 vs-e5th2112s2l-m3.pdf
VS-E5TH2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.63 EUR
1600+1.57 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH2112S2L-M3 vs-e5th2112s2l-m3.pdf
VS-E5TH2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 2139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.1 EUR
10+3.32 EUR
100+2.3 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VS-2N682 vs-2n681-2n5205series.pdf
VS-2N682
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 50V 25A TO208AA
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 145A, 150A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 6.5 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 50 V
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.55 EUR
10+12.66 EUR
Mindestbestellmenge: 2
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BZX55B30-TAP bzx55.pdf
BZX55B30-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 27904 Stücke:
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Anzahl Preis
91+0.19 EUR
136+0.13 EUR
301+0.059 EUR
500+0.055 EUR
1000+0.051 EUR
2000+0.05 EUR
5000+0.049 EUR
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BZX55B30-TAP bzx55.pdf
BZX55B30-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20PWM45HM3/I v20pwm45.pdf
V20PWM45HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20PWM45HM3/I v20pwm45.pdf
V20PWM45HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 4618 Stücke:
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Anzahl Preis
9+1.97 EUR
14+1.32 EUR
100+0.92 EUR
500+0.74 EUR
1000+0.68 EUR
2000+0.63 EUR
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V40PW45C-M3/I v40pw45c.pdf
V40PW45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Produkt ist nicht verfügbar
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V40PW45C-M3/I v40pw45c.pdf
V40PW45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
auf Bestellung 1893 Stücke:
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Anzahl Preis
8+2.34 EUR
10+1.91 EUR
100+1.49 EUR
500+1.26 EUR
1000+1.03 EUR
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V20KL45-M3/H v20kl45.pdf
V20KL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
1500+0.47 EUR
Mindestbestellmenge: 1500
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V20KL45-M3/H v20kl45.pdf
V20KL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 3265 Stücke:
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Anzahl Preis
11+1.67 EUR
15+1.24 EUR
100+0.88 EUR
500+0.68 EUR
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V40DM45C-M3/I v40dm45c.pdf
V40DM45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Produkt ist nicht verfügbar
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V40DM45C-M3/I v40dm45c.pdf
V40DM45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
auf Bestellung 1864 Stücke:
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Anzahl Preis
6+3.19 EUR
10+2.65 EUR
100+2.11 EUR
500+1.79 EUR
1000+1.52 EUR
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V40D45C-M3/I v40d45c.pdf
V40D45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
auf Bestellung 1965 Stücke:
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Anzahl Preis
6+3.22 EUR
10+2.68 EUR
100+2.13 EUR
500+1.8 EUR
1000+1.53 EUR
Mindestbestellmenge: 6
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TZMC3V9-GS18 tzm.pdf
TZMC3V9-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.054 EUR
Mindestbestellmenge: 10000
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TZMC3V9-GS18 tzm.pdf
TZMC3V9-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
52+0.34 EUR
100+0.18 EUR
500+0.12 EUR
1000+0.081 EUR
2000+0.073 EUR
5000+0.064 EUR
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VS-8ETH06S-M3 vs-8eth06s-m3.pdf
VS-8ETH06S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 8094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
50+0.93 EUR
100+0.88 EUR
500+0.74 EUR
1000+0.7 EUR
2000+0.67 EUR
5000+0.64 EUR
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SMAJ45AHM3/H smaj50a.pdf
SMAJ45AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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