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ZMY18-GS08 ZMY18-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 18V 1W DO213AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 10500 Stücke:
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1500+0.21 EUR
3000+0.19 EUR
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10500+0.16 EUR
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ZMY22-GS08 ZMY22-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 22V 1W DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 17 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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ZMY24-GS08 ZMY24-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 24V 1W DO213AB
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 18 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 14 Ohms
auf Bestellung 7500 Stücke:
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ZMY27-GS08 ZMY27-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 27V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
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ZMY30-GS08 ZMY30-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 30V 1W DO213AB
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 22.5 V
Power - Max: 1 W
Grade: Automotive
auf Bestellung 10500 Stücke:
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ZMY33-GS08 ZMY33-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 33V 1W DO213AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Qualification: AEC-Q101
Grade: Automotive
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ZMY62-GS08 ZMY62-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 62V 1W DO213AB
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 47 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
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ZMY68-GS08 ZMY68-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 68V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 51 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
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ZMY6V2-GS08 ZMY6V2-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 6.2V 1W DO213AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 2 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 13500 Stücke:
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ZMY6V8-GS08 ZMY6V8-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 6.8V 1W DO213AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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ZMY75-GS08 ZMY75-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 75V 1W DO213AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 160 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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ZMY8V2-GS08 ZMY8V2-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 8.2V 1W DO213AB
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Produkt ist nicht verfügbar
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VS-100MT060WDF Vishay General Semiconductor - Diodes Division VS-100MT060WDF.pdf Description: IGBT MODULE 600V 121A 462W MTP
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 462 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 121 A
Supplier Device Package: MTP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.29V @ 15V, 60A
Operating Temperature: 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 16-MTP Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-100MT160PBPBF VS-100MT160PBPBF Vishay General Semiconductor - Diodes Division vs-40mt160ppbf.pdf Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPB
Packaging: Tray
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
auf Bestellung 597 Stücke:
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VS-100MT160P-P VS-100MT160P-P Vishay General Semiconductor - Diodes Division vs-40mt160p-p.pdf Description: BRIDGE RECT 3P 1.6KV 100A 12MTP
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Current - Average Rectified (Io): 100 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: 12-MTP Pressfit
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-110MT120KPBF VS-110MT120KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.2KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 110 A
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VS-110MT80KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 800V 110A MT-K
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VS-111MT160KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Current - Average Rectified (Io): 110 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-112MT120KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.2KV 110A MT-K
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VS-112MT160KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Current - Average Rectified (Io): 110 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-130MT100KPBF VS-130MT100KPBF Vishay General Semiconductor - Diodes Division vs-130mt80k.pdf Description: BRIDGE RECT 3PHASE 1KV 130A MT-K
Produkt ist nicht verfügbar
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VS-130MT160KPBF VS-130MT160KPBF Vishay General Semiconductor - Diodes Division vs-130mt80k.pdf Description: BRIDGE RECT 3P 1.6KV 130A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
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VS-20MT120UFAPBF Vishay General Semiconductor - Diodes Division VS-20MT120UFAPbF.pdf Description: IGBT MODULE 1200V 20A 240W MTP
Packaging: Tray
Package / Case: 16-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.66V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: MTP
IGBT Type: NPT
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 240 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.79 nF @ 30 V
Produkt ist nicht verfügbar
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VS-20MT120UFP Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 1200V 40A 240W MTP
Packaging: Tray
Package / Case: 16-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.66V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: MTP
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 240 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.79 nF @ 30 V
Produkt ist nicht verfügbar
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VS-36MT5 VS-36MT5 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 3PHASE 600V 35A D-63
Produkt ist nicht verfügbar
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VS-401CNQ040PBF Vishay General Semiconductor - Diodes Division vs-401cnq045pbf.pdf Description: DIODE MOD SCHOTT 40V 40A TO244AB
Current - Reverse Leakage @ Vr: 4 mA @ 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 40 V
Produkt ist nicht verfügbar
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VS-40MT120UHAPBF Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 1200V 80A 463W MTP
Produkt ist nicht verfügbar
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VS-40MT160KPBF VS-40MT160KPBF Vishay General Semiconductor - Diodes Division doc?93163 Description: BRIDGE RECT 3P 1.6KV 40A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Produkt ist nicht verfügbar
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VS-40MT160PAPBF Vishay General Semiconductor - Diodes Division vs-40mt160ppbf.pdf Description: BRIDGE RECT 3P 1.6KV 40A 7-MTPA
Packaging: Tray
Package / Case: 7-MTPA
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPA
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Produkt ist nicht verfügbar
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VS-40MT160P-P VS-40MT160P-P Vishay General Semiconductor - Diodes Division vs-40mt160p-p.pdf Description: BRIDGE RECT 3P 1.6KV 45A 12MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Produkt ist nicht verfügbar
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VS-50MT060WHTAPBF VS-50MT060WHTAPBF Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 600V 114A 658W MTP
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 658 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 114 A
Part Status: Obsolete
Supplier Device Package: MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Configuration: Half Bridge
Produkt ist nicht verfügbar
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VS-51MT160KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-52MT120KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.2KV 55A MT-K
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VS-52MT160KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-53MT160KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-70MT060WHTAPBF Vishay General Semiconductor - Diodes Division VS-70MT060WHTAPbF.pdf Description: IGBT MODULE 600V 100A 347W MTP
Input Capacitance (Cies) @ Vce: 8 nF @ 30 V
Current - Collector Cutoff (Max): 700 µA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-70MT120KPBF VS-70MT120KPBF Vishay General Semiconductor - Diodes Division VS-60-70MT_KPbF.pdf Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
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VS-70MT140KPBF Vishay General Semiconductor - Diodes Division VS-60-70MT_KPbF.pdf Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Current - Average Rectified (Io): 70 A
Voltage - Peak Reverse (Max): 1.4 kV
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-70MT160PAPBF VS-70MT160PAPBF Vishay General Semiconductor - Diodes Division vs-40mt160ppbf.pdf Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
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VS-70MT160PBPBF VS-70MT160PBPBF Vishay General Semiconductor - Diodes Division vs-40mt160ppbf.pdf Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
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VS-70MT80KPBF Vishay General Semiconductor - Diodes Division VS-(60,70)MT..KPbF%20Series.pdf Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Current - Average Rectified (Io): 70 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-90MT120KPBF VS-90MT120KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
Produkt ist nicht verfügbar
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VS-90MT160KPBF VS-90MT160KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
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VS-91MT160KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-92MT120KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.2KV 90A MT-K
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VS-92MT160KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-93MT160KPBF Vishay General Semiconductor - Diodes Division vs-90110mtk.pdf Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-HFA140FA60 VS-HFA140FA60 Vishay General Semiconductor - Diodes Division vs-hfa140fa60.pdf Description: DIODE HEXFRED 70A 600V SOT-227
Produkt ist nicht verfügbar
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VS-HFA140NJ60CPBF Vishay General Semiconductor - Diodes Division vs-hfa140nj60cpbf.pdf Description: DIODE MOD GP 600V 167A TO244AB
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 167A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 33 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
Produkt ist nicht verfügbar
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VS-HFA200FA120P VS-HFA200FA120P Vishay General Semiconductor - Diodes Division VS-HFA200FA120P.pdf Description: DIODE HEXFRED 100A 1200V SOT-227
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 100A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Produkt ist nicht verfügbar
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VS-HFA280NJ60CPBF VS-HFA280NJ60CPBF Vishay General Semiconductor - Diodes Division vs-hfa280nj60cpbf.pdf Description: DIODE MOD GP 600V 280A TO244AB
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 280A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 39 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
Produkt ist nicht verfügbar
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VS-HFA60EA120P VS-HFA60EA120P Vishay General Semiconductor - Diodes Division Description: DIODE MODULE GP 1200V 30A SOT227
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
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VS-HFA60FA120P VS-HFA60FA120P Vishay General Semiconductor - Diodes Division VS-HFA60FA120P.pdf Description: DIODE MODULE GP 1200V 30A SOT227
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 123 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Produkt ist nicht verfügbar
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VS-HFA70FA120 VS-HFA70FA120 Vishay General Semiconductor - Diodes Division vshfa70f.pdf Description: DIODE MODULE GP 1200V 70A SOT227
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 70A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 51 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
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VS-HFA80FA120P VS-HFA80FA120P Vishay General Semiconductor - Diodes Division VS-HFA80FA120P.pdf Description: DIODE HEXFRED 40A 1200V SOT-227
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 40A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Produkt ist nicht verfügbar
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VS-100BGQ015HF4 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-100BGQ030HF4 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-100BGQ045HF4 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-10CTQ150-1PBF VS-10CTQ150-1PBF Vishay General Semiconductor - Diodes Division VS-10CTQ150%28SPBF%2C-1PBF%29.pdf Description: DIODE ARR SCHOTT 150V 5A TO2623
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-262-3
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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VS-10CWH02FN-M3 VS-10CWH02FN-M3 Vishay General Semiconductor - Diodes Division vs-10cwh02f.pdf Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
auf Bestellung 10313 Stücke:
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7+2.85 EUR
75+1.27 EUR
150+1.14 EUR
525+0.95 EUR
1050+0.87 EUR
2025+0.81 EUR
5025+0.73 EUR
10050+0.69 EUR
Mindestbestellmenge: 7
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ZMY18-GS08 zmy3v9.pdf
ZMY18-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1W DO213AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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Anzahl Preis
1500+0.21 EUR
3000+0.19 EUR
4500+0.18 EUR
7500+0.17 EUR
10500+0.16 EUR
Mindestbestellmenge: 1500
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ZMY22-GS08 zmy3v9.pdf
ZMY22-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1W DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 17 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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ZMY24-GS08 zmy3v9.pdf
ZMY24-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1W DO213AB
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 18 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 14 Ohms
auf Bestellung 7500 Stücke:
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Anzahl Preis
1500+0.21 EUR
3000+0.19 EUR
4500+0.18 EUR
7500+0.17 EUR
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ZMY27-GS08 zmy3v9.pdf
ZMY27-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
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Anzahl Preis
1500+0.18 EUR
3000+0.16 EUR
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ZMY30-GS08 zmy3v9.pdf
ZMY30-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 1W DO213AB
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 22.5 V
Power - Max: 1 W
Grade: Automotive
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Anzahl Preis
1500+0.23 EUR
3000+0.21 EUR
4500+0.2 EUR
7500+0.19 EUR
10500+0.18 EUR
Mindestbestellmenge: 1500
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ZMY33-GS08 zmy3v9.pdf
ZMY33-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 1W DO213AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Qualification: AEC-Q101
Grade: Automotive
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Anzahl Preis
1500+0.21 EUR
3000+0.19 EUR
4500+0.18 EUR
Mindestbestellmenge: 1500
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ZMY62-GS08 zmy3v9.pdf
ZMY62-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 1W DO213AB
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 47 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
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Anzahl Preis
1500+0.21 EUR
3000+0.19 EUR
Mindestbestellmenge: 1500
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ZMY68-GS08 zmy3v9.pdf
ZMY68-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 51 V
Grade: Automotive
Qualification: AEC-Q101
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Anzahl Preis
1500+0.28 EUR
3000+0.25 EUR
4500+0.24 EUR
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ZMY6V2-GS08 zmy3v9.pdf
ZMY6V2-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1W DO213AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 2 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 13500 Stücke:
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Anzahl Preis
1500+0.2 EUR
3000+0.18 EUR
7500+0.17 EUR
10500+0.16 EUR
Mindestbestellmenge: 1500
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ZMY6V8-GS08 zmy3v9.pdf
ZMY6V8-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1W DO213AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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Anzahl Preis
1500+0.23 EUR
3000+0.21 EUR
4500+0.2 EUR
7500+0.19 EUR
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ZMY75-GS08 zmy3v9.pdf
ZMY75-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1W DO213AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 160 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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Anzahl Preis
1500+0.21 EUR
3000+0.19 EUR
4500+0.18 EUR
7500+0.17 EUR
Mindestbestellmenge: 1500
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ZMY8V2-GS08 zmy3v9.pdf
ZMY8V2-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1W DO213AB
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: DO-213AB
Produkt ist nicht verfügbar
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VS-100MT060WDF VS-100MT060WDF.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 121A 462W MTP
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 462 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 121 A
Supplier Device Package: MTP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.29V @ 15V, 60A
Operating Temperature: 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 16-MTP Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-100MT160PBPBF vs-40mt160ppbf.pdf
VS-100MT160PBPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPB
Packaging: Tray
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
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VS-100MT160P-P vs-40mt160p-p.pdf
VS-100MT160P-P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 100A 12MTP
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Current - Average Rectified (Io): 100 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: 12-MTP Pressfit
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-110MT120KPBF vs-90110mtk.pdf
VS-110MT120KPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 110 A
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1+122.8 EUR
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VS-110MT80KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 800V 110A MT-K
Produkt ist nicht verfügbar
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VS-111MT160KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Current - Average Rectified (Io): 110 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-112MT120KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
Produkt ist nicht verfügbar
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VS-112MT160KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Current - Average Rectified (Io): 110 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-130MT100KPBF vs-130mt80k.pdf
VS-130MT100KPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1KV 130A MT-K
Produkt ist nicht verfügbar
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VS-130MT160KPBF vs-130mt80k.pdf
VS-130MT160KPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 130A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
auf Bestellung 9 Stücke:
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VS-20MT120UFAPBF VS-20MT120UFAPbF.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 20A 240W MTP
Packaging: Tray
Package / Case: 16-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.66V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: MTP
IGBT Type: NPT
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 240 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.79 nF @ 30 V
Produkt ist nicht verfügbar
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VS-20MT120UFP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 40A 240W MTP
Packaging: Tray
Package / Case: 16-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.66V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: MTP
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 240 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.79 nF @ 30 V
Produkt ist nicht verfügbar
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VS-36MT5
VS-36MT5
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 600V 35A D-63
Produkt ist nicht verfügbar
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VS-401CNQ040PBF vs-401cnq045pbf.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTT 40V 40A TO244AB
Current - Reverse Leakage @ Vr: 4 mA @ 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 40 V
Produkt ist nicht verfügbar
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VS-40MT120UHAPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 80A 463W MTP
Produkt ist nicht verfügbar
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VS-40MT160KPBF doc?93163
VS-40MT160KPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 40A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Produkt ist nicht verfügbar
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VS-40MT160PAPBF vs-40mt160ppbf.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 40A 7-MTPA
Packaging: Tray
Package / Case: 7-MTPA
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPA
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Produkt ist nicht verfügbar
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VS-40MT160P-P vs-40mt160p-p.pdf
VS-40MT160P-P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 45A 12MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Produkt ist nicht verfügbar
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VS-50MT060WHTAPBF
VS-50MT060WHTAPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 114A 658W MTP
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 658 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 114 A
Part Status: Obsolete
Supplier Device Package: MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Configuration: Half Bridge
Produkt ist nicht verfügbar
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VS-51MT160KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-52MT120KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 55A MT-K
Produkt ist nicht verfügbar
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VS-52MT160KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-53MT160KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-70MT060WHTAPBF VS-70MT060WHTAPbF.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 100A 347W MTP
Input Capacitance (Cies) @ Vce: 8 nF @ 30 V
Current - Collector Cutoff (Max): 700 µA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-70MT120KPBF VS-60-70MT_KPbF.pdf
VS-70MT120KPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
auf Bestellung 1 Stücke:
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Anzahl Preis
1+108.77 EUR
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VS-70MT140KPBF VS-60-70MT_KPbF.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Current - Average Rectified (Io): 70 A
Voltage - Peak Reverse (Max): 1.4 kV
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-70MT160PAPBF vs-40mt160ppbf.pdf
VS-70MT160PAPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
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Anzahl Preis
1+71.19 EUR
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VS-70MT160PBPBF vs-40mt160ppbf.pdf
VS-70MT160PBPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
auf Bestellung 62 Stücke:
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Anzahl Preis
1+66.9 EUR
15+47.98 EUR
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VS-70MT80KPBF VS-(60,70)MT..KPbF%20Series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Current - Average Rectified (Io): 70 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-90MT120KPBF vs-90110mtk.pdf
VS-90MT120KPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
Produkt ist nicht verfügbar
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VS-90MT160KPBF vs-90110mtk.pdf
VS-90MT160KPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+108.73 EUR
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VS-91MT160KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-92MT120KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Produkt ist nicht verfügbar
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VS-92MT160KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-93MT160KPBF vs-90110mtk.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Produkt ist nicht verfügbar
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VS-HFA140FA60 vs-hfa140fa60.pdf
VS-HFA140FA60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 70A 600V SOT-227
Produkt ist nicht verfügbar
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VS-HFA140NJ60CPBF vs-hfa140nj60cpbf.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 167A TO244AB
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 167A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 33 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
Produkt ist nicht verfügbar
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VS-HFA200FA120P VS-HFA200FA120P.pdf
VS-HFA200FA120P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 100A 1200V SOT-227
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 100A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Produkt ist nicht verfügbar
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VS-HFA280NJ60CPBF vs-hfa280nj60cpbf.pdf
VS-HFA280NJ60CPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 280A TO244AB
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 280A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 39 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
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VS-HFA60EA120P
VS-HFA60EA120P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
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VS-HFA60FA120P VS-HFA60FA120P.pdf
VS-HFA60FA120P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 123 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Produkt ist nicht verfügbar
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VS-HFA70FA120 vshfa70f.pdf
VS-HFA70FA120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 70A SOT227
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 70A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 51 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
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VS-HFA80FA120P VS-HFA80FA120P.pdf
VS-HFA80FA120P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 40A 1200V SOT-227
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 40A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Produkt ist nicht verfügbar
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VS-100BGQ015HF4
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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VS-100BGQ030HF4
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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VS-100BGQ045HF4
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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VS-10CTQ150-1PBF VS-10CTQ150%28SPBF%2C-1PBF%29.pdf
VS-10CTQ150-1PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO2623
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-262-3
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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VS-10CWH02FN-M3 vs-10cwh02f.pdf
VS-10CWH02FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
auf Bestellung 10313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
75+1.27 EUR
150+1.14 EUR
525+0.95 EUR
1050+0.87 EUR
2025+0.81 EUR
5025+0.73 EUR
10050+0.69 EUR
Mindestbestellmenge: 7
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