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VS-301MT180C VS-301MT180C Vishay General Semiconductor - Diodes Division vs-301mt_c_series.pdf Description: BRIDGE RECT 3PHASE 1.8KV 300A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Average Rectified (Io): 300 A
Voltage - Peak Reverse (Max): 1.8 kV
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
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VS-131MT180C VS-131MT180C Vishay General Semiconductor - Diodes Division vs-131mt_c_series.pdf Description: MTC - THREE PHASE BRIDGE
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A
Current - Average Rectified (Io): 218 A
Voltage - Peak Reverse (Max): 1.8 kV
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
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VS-10ETS12-M3 VS-10ETS12-M3 Vishay General Semiconductor - Diodes Division vs-10etsm3.pdf Description: DIODE STANDARD 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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SMCJ12CAHM3_A/H SMCJ12CAHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 75.4A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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TZMC30-GS18 TZMC30-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 30V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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TZMC30-GS18 TZMC30-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 30V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
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P4SMA27AHM3_A/I P4SMA27AHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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P4SMA27AHM3/I P4SMA27AHM3/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
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P4SMA27AHM3_A/H P4SMA27AHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
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P4SMA27AHM3/H P4SMA27AHM3/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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VS-EPX6007L-N3 VS-EPX6007L-N3 Vishay General Semiconductor - Diodes Division vs-epx6007l-n3.pdf Description: DIODE GEN PURP 650V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
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SL23-7001HE3_A/I SL23-7001HE3_A/I Vishay General Semiconductor - Diodes Division SL22,SL23.pdf Description: DIODE SCHOTTKY
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12CWQ03FNTR 12CWQ03FNTR Vishay General Semiconductor - Diodes Division 12CWQ03FN.pdf Description: DIODE ARRAY SCHOTTKY 30V 6A DPAK
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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VS-60EPF12-M3 VS-60EPF12-M3 Vishay General Semiconductor - Diodes Division vs-60pf1-m3series.pdf Description: DIODE STANDARD 1200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-10ETS12THM3 Vishay General Semiconductor - Diodes Division vs-10ets12thm3.pdf Description: RECTIFIER DIODE 10A 1200V TO-220
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S5MS-E3/9AT S5MS-E3/9AT Vishay General Semiconductor - Diodes Division s5ms.pdf Description: DIODE STD 1000V 1.6A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
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S5MS-E3/9AT S5MS-E3/9AT Vishay General Semiconductor - Diodes Division s5ms.pdf Description: DIODE STD 1000V 1.6A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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BZX84B15-HE3-08 BZX84B15-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 15V 300MW SOT23-3
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
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BZX84B15-HE3-08 BZX84B15-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 15V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
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BZT52C3V3-HE3-08 BZT52C3V3-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
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BZT52C3V3-HE3-08 BZT52C3V3-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
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BZX55C30-TR BZX55C30-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
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BZX55C30-TR BZX55C30-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
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SMPZ3919B-M3/84A SMPZ3919B-M3/84A Vishay General Semiconductor - Diodes Division smpz39x.pdf Description: DIODE ZENER 5.6V 500MW DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SMPZ3919B-M3/84A SMPZ3919B-M3/84A Vishay General Semiconductor - Diodes Division smpz39x.pdf Description: DIODE ZENER 5.6V 500MW DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BZD27B39P-M3-08 BZD27B39P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
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BZD27B39P-E3-18 BZD27B39P-E3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
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BZD27B39P-HE3-08 BZD27B39P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
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BZD27B39P-HE3-18 BZD27B39P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27B39P-M3-18 BZD27B39P-M3-18 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
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BZD27B39P-E3-08 BZD27B39P-E3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
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VS-APH3006LHN3 VS-APH3006LHN3 Vishay General Semiconductor - Diodes Division vs-aph3006lhn3.pdf Description: DIODE STANDARD 600V 30A TO247AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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VS-APH3006L-N3 Vishay General Semiconductor - Diodes Division vs-aph3006l-n3.pdf Description: DIODE STANDARD 600V 30A TO247AD
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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MURS460-E3/H MURS460-E3/H Vishay General Semiconductor - Diodes Division murs460.pdf Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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MURS460-M3/I MURS460-M3/I Vishay General Semiconductor - Diodes Division murs460.pdf Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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MURS460-M3/H MURS460-M3/H Vishay General Semiconductor - Diodes Division murs460.pdf Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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MURS460-E3/I MURS460-E3/I Vishay General Semiconductor - Diodes Division murs460.pdf Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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V30K45HM3/H V30K45HM3/H Vishay General Semiconductor - Diodes Division v30k45.pdf Description: DIODE SCHOTTKY 45V 30A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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V30K45HM3/H V30K45HM3/H Vishay General Semiconductor - Diodes Division v30k45.pdf Description: DIODE SCHOTTKY 45V 30A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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V30K45-01HM3/H V30K45-01HM3/H Vishay General Semiconductor - Diodes Division v30k45.pdf Description: DIODE SCHOTTKY 45V 30A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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BZX384C43-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 43V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
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BZX384C43-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 43V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TA6L12AHM3/H TA6L12AHM3/H Vishay General Semiconductor - Diodes Division ta6l6_8athruta6l51a.pdf Description: 600W,12V 5%, SLIMSMAW PAR
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: SlimSMAW (DO-221AD)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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TA6L12AHM3/H TA6L12AHM3/H Vishay General Semiconductor - Diodes Division ta6l6_8athruta6l51a.pdf Description: 600W,12V 5%, SLIMSMAW PAR
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: SlimSMAW (DO-221AD)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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P4SMA130CAHE3/5A Vishay General Semiconductor - Diodes Division Description: TVS DIODE BI 111VWM 179VC SMA
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MBRB10100-E3/4W MBRB10100-E3/4W Vishay General Semiconductor - Diodes Division mbr10100-m3.pdf Description: DIODE SCHOTTKY 100V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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BZX85C4V3-TR BZX85C4V3-TR Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 4.3V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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BZX85C4V3-TR BZX85C4V3-TR Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 4.3V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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SMC5K18AHM3_A/H SMC5K18AHM3_A/H Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 18VWM 29.2VC DO214AB
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SMC5K18AHM3_A/H SMC5K18AHM3_A/H Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 18VWM 29.2VC DO214AB
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SMC5K18AHM3_A/I SMC5K18AHM3_A/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 18VWM 29.2VC DO214AB
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SMC5K18AHM3_A/I SMC5K18AHM3_A/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 18VWM 29.2VC DO214AB
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T4F18AHM3/H T4F18AHM3/H Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: LOW PROFILE OF 400W PAR TVS PROD
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T4F18AHM3/H T4F18AHM3/H Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: LOW PROFILE OF 400W PAR TVS PROD
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VS-MURB2020CT-1-M3 VS-MURB2020CT-1-M3 Vishay General Semiconductor - Diodes Division vs-murb2020ct-m3.pdf Description: DIODE ARRAY GP 200V 10A TO-262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
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TPSMB12AHE3_A/H TPSMB12AHE3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 10.2VWM 16.7V DO214AA
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
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TPSMB12AHM3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 10.2VWM 16.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Applications: Telecom
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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TPSMB12AHM3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 10.2VWM 16.7V DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Applications: Telecom
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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TPSMB12AHE3_A/I TPSMB12AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 10.2VWM 16.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-MURB1620CTLHM3 VS-MURB1620CTLHM3 Vishay General Semiconductor - Diodes Division vs-murb1620cthm3.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-301MT180C vs-301mt_c_series.pdf
VS-301MT180C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.8KV 300A
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Average Rectified (Io): 300 A
Voltage - Peak Reverse (Max): 1.8 kV
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
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VS-131MT180C vs-131mt_c_series.pdf
VS-131MT180C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MTC - THREE PHASE BRIDGE
Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A
Current - Average Rectified (Io): 218 A
Voltage - Peak Reverse (Max): 1.8 kV
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
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VS-10ETS12-M3 vs-10etsm3.pdf
VS-10ETS12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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5+4.33 EUR
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SMCJ12CAHM3_A/H smcj.pdf
SMCJ12CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 75.4A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TZMC30-GS18 tzm.pdf
TZMC30-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TZMC30-GS18 tzm.pdf
TZMC30-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 80 Ohms
auf Bestellung 4015 Stücke:
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84+0.25 EUR
118+0.18 EUR
272+0.077 EUR
500+0.074 EUR
1000+0.065 EUR
2000+0.064 EUR
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P4SMA27AHM3_A/I p4sma.pdf
P4SMA27AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P4SMA27AHM3/I p4sma.pdf
P4SMA27AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Produkt ist nicht verfügbar
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P4SMA27AHM3_A/H p4sma.pdf
P4SMA27AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Produkt ist nicht verfügbar
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P4SMA27AHM3/H p4sma.pdf
P4SMA27AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 37.5V
Voltage - Breakdown (Min): 25.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 23.1V
Current - Peak Pulse (10/1000µs): 10.7A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-EPX6007L-N3 vs-epx6007l-n3.pdf
VS-EPX6007L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 650V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 495 Stücke:
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3+7.69 EUR
10+6.9 EUR
100+5.65 EUR
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SL23-7001HE3_A/I SL22,SL23.pdf
SL23-7001HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY
Produkt ist nicht verfügbar
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12CWQ03FNTR 12CWQ03FN.pdf
12CWQ03FNTR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V 6A DPAK
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar
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VS-60EPF12-M3 vs-60pf1-m3series.pdf
VS-60EPF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 51 Stücke:
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2+20.42 EUR
25+12.42 EUR
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VS-10ETS12THM3 vs-10ets12thm3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER DIODE 10A 1200V TO-220
Produkt ist nicht verfügbar
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S5MS-E3/9AT s5ms.pdf
S5MS-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.6A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar
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S5MS-E3/9AT s5ms.pdf
S5MS-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.6A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 1460 Stücke:
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23+0.92 EUR
35+0.62 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
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BZX84B15-HE3-08 bzx84_series.pdf
BZX84B15-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOT23-3
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Produkt ist nicht verfügbar
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BZX84B15-HE3-08 bzx84_series.pdf
BZX84B15-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 3018 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
106+0.2 EUR
157+0.13 EUR
500+0.1 EUR
1000+0.092 EUR
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BZT52C3V3-HE3-08 bzt52.pdf
BZT52C3V3-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C3V3-HE3-08 bzt52.pdf
BZT52C3V3-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
76+0.27 EUR
123+0.17 EUR
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BZX55C30-TR bzx55.pdf
BZX55C30-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
10000+0.17 EUR
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BZX55C30-TR bzx55.pdf
BZX55C30-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18107 Stücke:
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24+0.88 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.2 EUR
5000+0.18 EUR
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SMPZ3919B-M3/84A smpz39x.pdf
SMPZ3919B-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.14 EUR
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SMPZ3919B-M3/84A smpz39x.pdf
SMPZ3919B-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 5984 Stücke:
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35+0.61 EUR
53+0.4 EUR
107+0.2 EUR
500+0.19 EUR
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BZD27B39P-M3-08 bzd27b-mseries.pdf
BZD27B39P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-E3-18 bzd27bseries.pdf
BZD27B39P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-HE3-08 bzd27bseries.pdf
BZD27B39P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-HE3-18 bzd27bseries.pdf
BZD27B39P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZD27B39P-M3-18 bzd27b-mseries.pdf
BZD27B39P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B39P-E3-08 bzd27bseries.pdf
BZD27B39P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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VS-APH3006LHN3 vs-aph3006lhn3.pdf
VS-APH3006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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VS-APH3006L-N3 vs-aph3006l-n3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AD
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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MURS460-E3/H murs460.pdf
MURS460-E3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS460-M3/I murs460.pdf
MURS460-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS460-M3/H murs460.pdf
MURS460-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS460-E3/I murs460.pdf
MURS460-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2.4A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V30K45HM3/H v30k45.pdf
V30K45HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V30K45HM3/H v30k45.pdf
V30K45HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1726 Stücke:
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AnzahlPrivatkunde
10+2.15 EUR
15+1.49 EUR
100+1.19 EUR
500+0.94 EUR
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V30K45-01HM3/H v30k45.pdf
V30K45-01HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7208 Stücke:
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10+2.15 EUR
15+1.43 EUR
100+1.14 EUR
500+0.89 EUR
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BZX384C43-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384C43-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TA6L12AHM3/H ta6l6_8athruta6l51a.pdf
TA6L12AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,12V 5%, SLIMSMAW PAR
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: SlimSMAW (DO-221AD)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3500 Stücke:
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3500+0.24 EUR
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TA6L12AHM3/H ta6l6_8athruta6l51a.pdf
TA6L12AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,12V 5%, SLIMSMAW PAR
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: SlimSMAW (DO-221AD)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
29+0.73 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.32 EUR
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P4SMA130CAHE3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE BI 111VWM 179VC SMA
Produkt ist nicht verfügbar
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MBRB10100-E3/4W mbr10100-m3.pdf
MBRB10100-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 6374 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
13+1.69 EUR
100+1.3 EUR
500+1.06 EUR
1000+1.01 EUR
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BZX85C4V3-TR BZX85_Series.pdf
BZX85C4V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
5000+0.098 EUR
10000+0.088 EUR
15000+0.083 EUR
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BZX85C4V3-TR BZX85_Series.pdf
BZX85C4V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 23932 Stücke:
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AnzahlPrivatkunde
59+0.36 EUR
88+0.24 EUR
211+0.1 EUR
500+0.099 EUR
1000+0.098 EUR
2000+0.096 EUR
Mindestbestellmenge: 59 Stücke
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SMC5K18AHM3_A/H smc5k10a.pdf
SMC5K18AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
Produkt ist nicht verfügbar
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SMC5K18AHM3_A/H smc5k10a.pdf
SMC5K18AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
auf Bestellung 638 Stücke:
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6+4.11 EUR
10+3.68 EUR
100+2.95 EUR
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SMC5K18AHM3_A/I smc5k10a.pdf
SMC5K18AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
Produkt ist nicht verfügbar
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SMC5K18AHM3_A/I smc5k10a.pdf
SMC5K18AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
auf Bestellung 3495 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.56 EUR
10+2.27 EUR
100+1.77 EUR
500+1.46 EUR
1000+1.2 EUR
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T4F18AHM3/H t4f10a_t4f51a.pdf
T4F18AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: LOW PROFILE OF 400W PAR TVS PROD
Produkt ist nicht verfügbar
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T4F18AHM3/H t4f10a_t4f51a.pdf
T4F18AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: LOW PROFILE OF 400W PAR TVS PROD
auf Bestellung 100 Stücke:
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AnzahlPrivatkunde
24+0.88 EUR
33+0.65 EUR
100+0.4 EUR
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VS-MURB2020CT-1-M3 vs-murb2020ct-m3.pdf
VS-MURB2020CT-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO-262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
auf Bestellung 7409 Stücke:
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AnzahlPrivatkunde
6+3.52 EUR
50+1.68 EUR
100+1.5 EUR
500+1.18 EUR
1000+1.08 EUR
2000+1 EUR
5000+0.9 EUR
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TPSMB12AHE3_A/H tpsmb.pdf
TPSMB12AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7V DO214AA
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Produkt ist nicht verfügbar
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TPSMB12AHM3_A/H tpsmb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Applications: Telecom
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPSMB12AHM3_A/I tpsmb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7V DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Applications: Telecom
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TPSMB12AHE3_A/I tpsmb.pdf
TPSMB12AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-MURB1620CTLHM3 vs-murb1620cthm3.pdf
VS-MURB1620CTLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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