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GPP20M-E3/73 GPP20M-E3/73 Vishay General Semiconductor - Diodes Division gpp20a.pdf Description: DIODE GEN PURP 1KV 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SMC5K10A-M3/H SMC5K10A-M3/H Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 294.1A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC5K10A-M3/H SMC5K10A-M3/H Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 294.1A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 1390 Stücke:
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EGL41G-E3/97 EGL41G-E3/97 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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EGL41G-E3/97 EGL41G-E3/97 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GL41GHE3/96 GL41GHE3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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GL41GHE3/96 GL41GHE3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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GL41G-E3/97 GL41G-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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GL41G-E3/97 GL41G-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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GL41A-E3/96 GL41A-E3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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GL41A-E3/96 GL41A-E3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 5873 Stücke:
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BZD27C160P-HE3-08 BZD27C160P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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3000+0.26 EUR
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BZD27C160P-HE3-08 BZD27C160P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 28890 Stücke:
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BZD27B200P-M3-08 BZD27B200P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 18000 Stücke:
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BZD27B200P-M3-08 BZD27B200P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 20597 Stücke:
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VS-183NQ100PBF VS-183NQ100PBF Vishay General Semiconductor - Diodes Division vs-183nq100pbf.pdf Description: DIODE SCHO 100V 180A D67 HALFPAK
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4150pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 180 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V
auf Bestellung 16 Stücke:
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VS-18TQ035-M3 VS-18TQ035-M3 Vishay General Semiconductor - Diodes Division vs-18tq035-m3.pdf Description: DIODE SCHOTTKY 35V 18A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Produkt ist nicht verfügbar
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VS-18TQ040-M3 VS-18TQ040-M3 Vishay General Semiconductor - Diodes Division vs-18tq035-m3.pdf Description: DIODE SCHOTTKY 40V 18A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 40 V
Produkt ist nicht verfügbar
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BZX384C24-HE3-08 BZX384C24-HE3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 24V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
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BZX384C24-HE3-08 BZX384C24-HE3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 24V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
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V15K100C-M3/H V15K100C-M3/H Vishay General Semiconductor - Diodes Division v15k100c.pdf Description: DIODE ARR SCHOTT 100V 4.2A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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V15K100C-M3/H V15K100C-M3/H Vishay General Semiconductor - Diodes Division v15k100c.pdf Description: DIODE ARR SCHOTT 100V 4.2A FLTPK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
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500+0.74 EUR
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BZG05C8V2-M3-18 BZG05C8V2-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 8.2V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6.1%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Produkt ist nicht verfügbar
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BZG05C8V2-HM3-18 BZG05C8V2-HM3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 8.2V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6.1%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG05C12-M3-18 BZG05C12-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.42%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Produkt ist nicht verfügbar
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BZG05C12-HM3-18 BZG05C12-HM3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.42%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG05C12-E3-TR BZG05C12-E3-TR Vishay General Semiconductor - Diodes Division BZG05C_Series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Produkt ist nicht verfügbar
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BZG05C12-E3-TR BZG05C12-E3-TR Vishay General Semiconductor - Diodes Division BZG05C_Series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Produkt ist nicht verfügbar
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SMAJ20CA-E3/5A SMAJ20CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ20CA-E3/5A SMAJ20CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 7266 Stücke:
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EGF1A-E3/5CA EGF1A-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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EGF1A-E3/5CA EGF1A-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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EGF1THE3_A/H Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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EGF1THE3_A/H Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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EGF1THE3_A/I Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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EGF1THE3_A/I Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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BU1510-M3/45 BU1510-M3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1PHASE 1KV 15A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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SML4749AHE3_A/I SML4749AHE3_A/I Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 24V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
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BZX584C12-HG3-08 BZX584C12-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 12V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX584C12-HG3-08 BZX584C12-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 12V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 368 Stücke:
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V35PWL63-M3/I V35PWL63-M3/I Vishay General Semiconductor - Diodes Division v35pwl63.pdf Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
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SM8S18CAHM3/I SM8S18CAHM3/I Vishay General Semiconductor - Diodes Division sm8s10cathrusm8s85ca.pdf Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S18CAHM3/I SM8S18CAHM3/I Vishay General Semiconductor - Diodes Division sm8s10cathrusm8s85ca.pdf Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S18A-2HE3/2D SM8S18A-2HE3/2D Vishay General Semiconductor - Diodes Division SM8S10_thru_SM8S43A._Aug.31%2C2016.pdf Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10PWL63C-M3/I V10PWL63C-M3/I Vishay General Semiconductor - Diodes Division v10pwl63c.pdf Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4444 Stücke:
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V10PWL63-M3/I V10PWL63-M3/I Vishay General Semiconductor - Diodes Division v10pwl63.pdf Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
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V10PWL63CHM3/I V10PWL63CHM3/I Vishay General Semiconductor - Diodes Division v10pwl63c.pdf Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
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V10PWL63HM3/I V10PWL63HM3/I Vishay General Semiconductor - Diodes Division v10pwl63.pdf Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
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V20PWL63-M3/I V20PWL63-M3/I Vishay General Semiconductor - Diodes Division v20pwl63.pdf Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8377 Stücke:
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9+2.08 EUR
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V20PWL63C-M3/I V20PWL63C-M3/I Vishay General Semiconductor - Diodes Division v20pwl63c.pdf Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
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V20PWL63HM3/I V20PWL63HM3/I Vishay General Semiconductor - Diodes Division v20pwl63.pdf Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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9+1.99 EUR
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V20PWL63CHM3/I V20PWL63CHM3/I Vishay General Semiconductor - Diodes Division v20pwl63c.pdf Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 7690 Stücke:
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8+2.38 EUR
12+1.55 EUR
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1000+0.78 EUR
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V40PWL63C-M3/I V40PWL63C-M3/I Vishay General Semiconductor - Diodes Division v40pwl63c.pdf Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8995 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
10+1.79 EUR
100+1.2 EUR
500+0.95 EUR
1000+0.88 EUR
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V35PWL63HM3/I V35PWL63HM3/I Vishay General Semiconductor - Diodes Division v35pwl63.pdf Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 2825 Stücke:
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12+1.58 EUR
100+1.24 EUR
500+0.99 EUR
1000+0.92 EUR
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V40PWL63CHM3/I V40PWL63CHM3/I Vishay General Semiconductor - Diodes Division v40pwl63c.pdf Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8900 Stücke:
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100+1.41 EUR
500+1.12 EUR
1000+1.07 EUR
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MMSZ5239C-HE3_A-08 MMSZ5239C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5239C-HE3_A-18 MMSZ5239C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C68-HE3_A-08 BZT52C68-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 68V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C68-HE3_A-18 BZT52C68-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 68V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ48CA-E3/5A SMAJ48CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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GPP20M-E3/73 gpp20a.pdf
GPP20M-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 8000 Stücke:
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Anzahl Preis
2000+0.12 EUR
Mindestbestellmenge: 2000
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SMC5K10A-M3/H smc5k10a.pdf
SMC5K10A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 294.1A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC5K10A-M3/H smc5k10a.pdf
SMC5K10A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 294.1A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 1390 Stücke:
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5+4.33 EUR
10+2.79 EUR
100+1.91 EUR
Mindestbestellmenge: 5
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EGL41G-E3/97 egl41.pdf
EGL41G-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 10000 Stücke:
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Anzahl Preis
5000+0.2 EUR
10000+0.19 EUR
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EGL41G-E3/97 egl41.pdf
EGL41G-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 10000 Stücke:
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23+0.77 EUR
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GL41GHE3/96 bym10-xxx.pdf
GL41GHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
1500+0.16 EUR
Mindestbestellmenge: 1500
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GL41GHE3/96 bym10-xxx.pdf
GL41GHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 4989 Stücke:
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Anzahl Preis
24+0.76 EUR
30+0.59 EUR
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500+0.33 EUR
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GL41G-E3/97 bym10-xxx.pdf
GL41G-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.15 EUR
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GL41G-E3/97 bym10-xxx.pdf
GL41G-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 7355 Stücke:
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Anzahl Preis
23+0.79 EUR
27+0.67 EUR
100+0.47 EUR
500+0.37 EUR
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GL41A-E3/96 bym10-xxx.pdf
GL41A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 4500 Stücke:
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Anzahl Preis
1500+0.15 EUR
Mindestbestellmenge: 1500
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GL41A-E3/96 bym10-xxx.pdf
GL41A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 5873 Stücke:
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Anzahl Preis
23+0.79 EUR
27+0.67 EUR
100+0.47 EUR
500+0.37 EUR
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BZD27C160P-HE3-08 bzd27series.pdf
BZD27C160P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.22 EUR
15000+0.21 EUR
21000+0.2 EUR
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BZD27C160P-HE3-08 bzd27series.pdf
BZD27C160P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 28890 Stücke:
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Anzahl Preis
26+0.69 EUR
34+0.53 EUR
100+0.36 EUR
500+0.3 EUR
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BZD27B200P-M3-08 bzd27b-mseries.pdf
BZD27B200P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.11 EUR
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BZD27B200P-M3-08 bzd27b-mseries.pdf
BZD27B200P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 20597 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
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VS-183NQ100PBF vs-183nq100pbf.pdf
VS-183NQ100PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHO 100V 180A D67 HALFPAK
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4150pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 180 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.26 EUR
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VS-18TQ035-M3 vs-18tq035-m3.pdf
VS-18TQ035-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 18A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Produkt ist nicht verfügbar
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VS-18TQ040-M3 vs-18tq035-m3.pdf
VS-18TQ040-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 18A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 40 V
Produkt ist nicht verfügbar
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BZX384C24-HE3-08 bzx384.pdf
BZX384C24-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.068 EUR
6000+0.061 EUR
9000+0.057 EUR
15000+0.039 EUR
Mindestbestellmenge: 3000
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BZX384C24-HE3-08 bzx384.pdf
BZX384C24-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 22447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
114+0.15 EUR
237+0.074 EUR
500+0.073 EUR
1000+0.071 EUR
Mindestbestellmenge: 77
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V15K100C-M3/H v15k100c.pdf
V15K100C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 4.2A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.61 EUR
Mindestbestellmenge: 1500
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V15K100C-M3/H v15k100c.pdf
V15K100C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 4.2A FLTPK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
16+1.13 EUR
100+0.88 EUR
500+0.74 EUR
Mindestbestellmenge: 13
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BZG05C8V2-M3-18 bzg05c-m-series.pdf
BZG05C8V2-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6.1%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Produkt ist nicht verfügbar
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BZG05C8V2-HM3-18 bzg05c-m-series.pdf
BZG05C8V2-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6.1%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG05C12-M3-18 bzg05c-m-series.pdf
BZG05C12-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.42%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Produkt ist nicht verfügbar
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BZG05C12-HM3-18 bzg05c-m-series.pdf
BZG05C12-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.42%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG05C12-E3-TR BZG05C_Series.pdf
BZG05C12-E3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Produkt ist nicht verfügbar
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BZG05C12-E3-TR BZG05C_Series.pdf
BZG05C12-E3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Produkt ist nicht verfügbar
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SMAJ20CA-E3/5A smaj50a.pdf
SMAJ20CA-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ20CA-E3/5A smaj50a.pdf
SMAJ20CA-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 7266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
50+0.35 EUR
107+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 36
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EGF1A-E3/5CA egf1a.pdf
EGF1A-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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EGF1A-E3/5CA egf1a.pdf
EGF1A-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 6204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
20+0.91 EUR
100+0.72 EUR
500+0.55 EUR
1000+0.46 EUR
Mindestbestellmenge: 13
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EGF1THE3_A/H egf1t.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EGF1THE3_A/H egf1t.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
auf Bestellung 1030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
16+1.12 EUR
100+0.77 EUR
500+0.65 EUR
Mindestbestellmenge: 14
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EGF1THE3_A/I egf1t.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGF1THE3_A/I egf1t.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BU1510-M3/45 bu1506.pdf
BU1510-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 15A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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SML4749AHE3_A/I sml4738.pdf
SML4749AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX584C12-HG3-08 bzx584c-series.pdf
BZX584C12-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX584C12-HG3-08 bzx584c-series.pdf
BZX584C12-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
94+0.19 EUR
212+0.083 EUR
Mindestbestellmenge: 67
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V35PWL63-M3/I v35pwl63.pdf
V35PWL63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
14+1.34 EUR
100+1.06 EUR
500+0.84 EUR
1000+0.76 EUR
2000+0.75 EUR
Mindestbestellmenge: 10
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SM8S18CAHM3/I sm8s10cathrusm8s85ca.pdf
SM8S18CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM8S18CAHM3/I sm8s10cathrusm8s85ca.pdf
SM8S18CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.83 EUR
10+4.23 EUR
100+3.1 EUR
Mindestbestellmenge: 4
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SM8S18A-2HE3/2D SM8S10_thru_SM8S43A._Aug.31%2C2016.pdf
SM8S18A-2HE3/2D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10PWL63C-M3/I v10pwl63c.pdf
V10PWL63C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
20+0.88 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.46 EUR
2000+0.45 EUR
Mindestbestellmenge: 15
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V10PWL63-M3/I v10pwl63.pdf
V10PWL63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.13 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.52 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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V10PWL63CHM3/I v10pwl63c.pdf
V10PWL63CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
15+1.22 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.53 EUR
Mindestbestellmenge: 10
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V10PWL63HM3/I v10pwl63.pdf
V10PWL63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
17+1.07 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.58 EUR
Mindestbestellmenge: 12
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V20PWL63-M3/I v20pwl63.pdf
V20PWL63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.31 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.58 EUR
Mindestbestellmenge: 9
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V20PWL63C-M3/I v20pwl63c.pdf
V20PWL63C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
13+1.4 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
2000+0.63 EUR
Mindestbestellmenge: 8
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V20PWL63HM3/I v20pwl63.pdf
V20PWL63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
14+1.3 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
2000+0.71 EUR
Mindestbestellmenge: 9
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V20PWL63CHM3/I v20pwl63c.pdf
V20PWL63CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 7690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
12+1.55 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.78 EUR
2000+0.77 EUR
Mindestbestellmenge: 8
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V40PWL63C-M3/I v40pwl63c.pdf
V40PWL63C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
10+1.79 EUR
100+1.2 EUR
500+0.95 EUR
1000+0.88 EUR
Mindestbestellmenge: 7
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V35PWL63HM3/I v35pwl63.pdf
V35PWL63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 2825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
12+1.58 EUR
100+1.24 EUR
500+0.99 EUR
1000+0.92 EUR
Mindestbestellmenge: 8
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V40PWL63CHM3/I v40pwl63c.pdf
V40PWL63CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+1.78 EUR
100+1.41 EUR
500+1.12 EUR
1000+1.07 EUR
Mindestbestellmenge: 7
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MMSZ5239C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5239C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5239C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5239C-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C68-HE3_A-08 bzt52_series.pdf
BZT52C68-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C68-HE3_A-18 bzt52_series.pdf
BZT52C68-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ48CA-E3/5A smaj50a.pdf
SMAJ48CA-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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