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20CTQ045 20CTQ045 Vishay General Semiconductor - Diodes Division 20CTQ.pdf Description: DIODE ARR SCHOTT 45V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Produkt ist nicht verfügbar
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20CTQ045S 20CTQ045S Vishay General Semiconductor - Diodes Division 20CTQyyy%28S%2C-1%29.pdf Description: DIODE ARR SCHOTT 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Produkt ist nicht verfügbar
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V9N3L63-M3/I V9N3L63-M3/I Vishay General Semiconductor - Diodes Division v9n3l63.pdf Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.33 EUR
Mindestbestellmenge: 6000
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V9N3L63-M3/I V9N3L63-M3/I Vishay General Semiconductor - Diodes Division v9n3l63.pdf Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
22+0.81 EUR
25+0.76 EUR
100+0.62 EUR
250+0.58 EUR
500+0.49 EUR
1000+0.39 EUR
2500+0.36 EUR
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V9N3M63-M3/I V9N3M63-M3/I Vishay General Semiconductor - Diodes Division v9n3m63.pdf Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.33 EUR
Mindestbestellmenge: 6000
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V9N3M63-M3/I V9N3M63-M3/I Vishay General Semiconductor - Diodes Division v9n3m63.pdf Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
22+0.81 EUR
25+0.76 EUR
100+0.62 EUR
250+0.58 EUR
500+0.49 EUR
1000+0.39 EUR
2500+0.36 EUR
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V9N3M103-M3/I V9N3M103-M3/I Vishay General Semiconductor - Diodes Division v9n3m103.pdf Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.34 EUR
Mindestbestellmenge: 6000
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V9N3M103-M3/I V9N3M103-M3/I Vishay General Semiconductor - Diodes Division v9n3m103.pdf Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+0.83 EUR
25+0.78 EUR
100+0.64 EUR
250+0.59 EUR
500+0.50 EUR
1000+0.40 EUR
2500+0.37 EUR
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V9N3M153-M3/I V9N3M153-M3/I Vishay General Semiconductor - Diodes Division v9n3m153.pdf Description: 9A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 6000 Stücke:
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6000+0.39 EUR
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V9N3M153-M3/I V9N3M153-M3/I Vishay General Semiconductor - Diodes Division v9n3m153.pdf Description: 9A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 6000 Stücke:
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18+1.03 EUR
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1000+0.48 EUR
2500+0.43 EUR
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V9N3103-M3/I V9N3103-M3/I Vishay General Semiconductor - Diodes Division v9n3103.pdf Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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V9N3103-M3/I V9N3103-M3/I Vishay General Semiconductor - Diodes Division v9n3103.pdf Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.62 EUR
18+1.01 EUR
25+0.85 EUR
100+0.66 EUR
250+0.57 EUR
500+0.52 EUR
1000+0.47 EUR
2500+0.42 EUR
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V9N3202-M3/I V9N3202-M3/I Vishay General Semiconductor - Diodes Division v9n3202.pdf Description: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.36 EUR
Mindestbestellmenge: 6000
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V9N3202-M3/I V9N3202-M3/I Vishay General Semiconductor - Diodes Division v9n3202.pdf Description: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.00 EUR
21+0.87 EUR
25+0.82 EUR
100+0.67 EUR
250+0.62 EUR
500+0.53 EUR
1000+0.42 EUR
2500+0.38 EUR
Mindestbestellmenge: 18
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V9N3L63HM3/I V9N3L63HM3/I Vishay General Semiconductor - Diodes Division v9n3l63.pdf Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
V9N3L63HM3/I V9N3L63HM3/I Vishay General Semiconductor - Diodes Division v9n3l63.pdf Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+0.92 EUR
25+0.86 EUR
100+0.70 EUR
250+0.65 EUR
500+0.56 EUR
1000+0.44 EUR
2500+0.40 EUR
Mindestbestellmenge: 17
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V9N3M63HM3/I V9N3M63HM3/I Vishay General Semiconductor - Diodes Division v9n3m63.pdf Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.37 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
V9N3M63HM3/I V9N3M63HM3/I Vishay General Semiconductor - Diodes Division v9n3m63.pdf Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+0.91 EUR
25+0.86 EUR
100+0.70 EUR
250+0.65 EUR
500+0.55 EUR
1000+0.44 EUR
2500+0.40 EUR
Mindestbestellmenge: 17
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V9N3103HM3/I V9N3103HM3/I Vishay General Semiconductor - Diodes Division v9n3103.pdf Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000
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V9N3103HM3/I V9N3103HM3/I Vishay General Semiconductor - Diodes Division v9n3103.pdf Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
19+0.93 EUR
25+0.88 EUR
100+0.72 EUR
250+0.66 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.41 EUR
Mindestbestellmenge: 17
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V9N3M153HM3/I V9N3M153HM3/I Vishay General Semiconductor - Diodes Division v9n3m153.pdf Description: 9A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.43 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
V9N3M153HM3/I V9N3M153HM3/I Vishay General Semiconductor - Diodes Division v9n3m153.pdf Description: 9A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.80 EUR
16+1.13 EUR
25+0.95 EUR
100+0.74 EUR
250+0.64 EUR
500+0.58 EUR
1000+0.53 EUR
2500+0.48 EUR
Mindestbestellmenge: 10
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V9N3M103HM3/I V9N3M103HM3/I Vishay General Semiconductor - Diodes Division v9n3m103.pdf Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
V9N3M103HM3/I V9N3M103HM3/I Vishay General Semiconductor - Diodes Division v9n3m103.pdf Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
19+0.93 EUR
25+0.88 EUR
100+0.72 EUR
250+0.66 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.41 EUR
Mindestbestellmenge: 17
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V9N3202HM3/I V9N3202HM3/I Vishay General Semiconductor - Diodes Division v9n3202.pdf Description: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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V9N3202HM3/I V9N3202HM3/I Vishay General Semiconductor - Diodes Division v9n3202.pdf Description: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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MSX1PJ-M3/89A MSX1PJ-M3/89A Vishay General Semiconductor - Diodes Division msx1pb-msx1pd-msx1pg-msx1pj.pdf Description: TVS DIODE 600VWM MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 600V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
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9000+0.06 EUR
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MSX1PJ-M3/89A MSX1PJ-M3/89A Vishay General Semiconductor - Diodes Division msx1pb-msx1pd-msx1pg-msx1pj.pdf Description: TVS DIODE 600VWM MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 600V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
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PLZ6V8B-G3/H PLZ6V8B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 6.66V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.55%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
auf Bestellung 58500 Stücke:
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PLZ6V8B-G3/H PLZ6V8B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 6.66V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±2.55%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
auf Bestellung 62962 Stücke:
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SMF7V0A-E3-08 SMF7V0A-E3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 7VWM 12VC SMF
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 843pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.7A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMF7V0A-E3-08 SMF7V0A-E3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 7VWM 12VC SMF
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 843pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.7A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 27350 Stücke:
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SM8S14A-1HE3_A/I SM8S14A-1HE3_A/I Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 14VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM8S14A-1HE3/2D SM8S14A-1HE3/2D Vishay General Semiconductor - Diodes Division SM8S10_thru_SM8S43A._Aug.31,2016.pdf Description: TVS DIODE 14VWM 23.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-2EFU06HM3/I VS-2EFU06HM3/I Vishay General Semiconductor - Diodes Division vs-2efu06hm3.pdf Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-2EFU06HM3/I VS-2EFU06HM3/I Vishay General Semiconductor - Diodes Division vs-2efu06hm3.pdf Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 8029 Stücke:
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7+2.53 EUR
10+2.10 EUR
100+1.67 EUR
500+1.51 EUR
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VS-2EFH01-M3/I VS-2EFH01-M3/I Vishay General Semiconductor - Diodes Division vs-2efh01-m3.pdf Description: DIODE GEN PURP 100V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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VS-2EFH01-M3/I VS-2EFH01-M3/I Vishay General Semiconductor - Diodes Division vs-2efh01-m3.pdf Description: DIODE GEN PURP 100V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 5952 Stücke:
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VS-2EFU06-M3/I VS-2EFU06-M3/I Vishay General Semiconductor - Diodes Division vs-2efu06-m3.pdf Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
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VS-2EFU06-M3/I VS-2EFU06-M3/I Vishay General Semiconductor - Diodes Division vs-2efu06-m3.pdf Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 9230 Stücke:
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VETH100A203S-G3-18 VETH100A203S-G3-18 Vishay General Semiconductor - Diodes Division veth100a203s.pdf Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VETH100A203S-G3-18 VETH100A203S-G3-18 Vishay General Semiconductor - Diodes Division veth100a203s.pdf Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9930 Stücke:
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34+0.53 EUR
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Mindestbestellmenge: 34
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VETH100A203SHG3-08 VETH100A203SHG3-08 Vishay General Semiconductor - Diodes Division veth100a203s.pdf Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VETH100A203SHG3-08 VETH100A203SHG3-08 Vishay General Semiconductor - Diodes Division veth100a203s.pdf Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12300 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
47+0.38 EUR
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500+0.17 EUR
1000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 32
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VETH100A203SHG3-18 VETH100A203SHG3-18 Vishay General Semiconductor - Diodes Division veth100a203s.pdf Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VETH100A203SHG3-18 VETH100A203SHG3-18 Vishay General Semiconductor - Diodes Division veth100a203s.pdf Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9900 Stücke:
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32+0.56 EUR
47+0.38 EUR
100+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
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SM5S26CAHM3/I SM5S26CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 85.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.06 EUR
Mindestbestellmenge: 750
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SM5S26CAHM3/I SM5S26CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 85.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
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SM5S85CAHM3/I SM5S85CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 26.3A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.06 EUR
Mindestbestellmenge: 750
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SM5S85CAHM3/I SM5S85CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 26.3A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
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SM5S40CAHM3/I SM5S40CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 55.8A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.06 EUR
Mindestbestellmenge: 750
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SM5S40CAHM3/I SM5S40CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 55.8A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
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SM5S75CAHM3/I SM5S75CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 29.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.06 EUR
Mindestbestellmenge: 750
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SM5S75CAHM3/I SM5S75CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 29.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
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SM5S10CAHM3/I SM5S10CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.06 EUR
Mindestbestellmenge: 750
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SM5S10CAHM3/I SM5S10CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
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SM5S60CAHM3/I SM5S60CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 37.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.06 EUR
Mindestbestellmenge: 750
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SM5S60CAHM3/I SM5S60CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 37.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
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SM5S48CAHM3/I SM5S48CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.68 EUR
1500+2.29 EUR
2250+2.16 EUR
Mindestbestellmenge: 750
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SM5S48CAHM3/I SM5S48CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.44 EUR
10+3.72 EUR
100+3.01 EUR
Mindestbestellmenge: 4
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20CTQ045 20CTQ.pdf
20CTQ045
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Produkt ist nicht verfügbar
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20CTQ045S 20CTQyyy%28S%2C-1%29.pdf
20CTQ045S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Produkt ist nicht verfügbar
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V9N3L63-M3/I v9n3l63.pdf
V9N3L63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.33 EUR
Mindestbestellmenge: 6000
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V9N3L63-M3/I v9n3l63.pdf
V9N3L63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
22+0.81 EUR
25+0.76 EUR
100+0.62 EUR
250+0.58 EUR
500+0.49 EUR
1000+0.39 EUR
2500+0.36 EUR
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V9N3M63-M3/I v9n3m63.pdf
V9N3M63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.33 EUR
Mindestbestellmenge: 6000
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V9N3M63-M3/I v9n3m63.pdf
V9N3M63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
22+0.81 EUR
25+0.76 EUR
100+0.62 EUR
250+0.58 EUR
500+0.49 EUR
1000+0.39 EUR
2500+0.36 EUR
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V9N3M103-M3/I v9n3m103.pdf
V9N3M103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.34 EUR
Mindestbestellmenge: 6000
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V9N3M103-M3/I v9n3m103.pdf
V9N3M103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
22+0.83 EUR
25+0.78 EUR
100+0.64 EUR
250+0.59 EUR
500+0.50 EUR
1000+0.40 EUR
2500+0.37 EUR
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V9N3M153-M3/I v9n3m153.pdf
V9N3M153-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.39 EUR
Mindestbestellmenge: 6000
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V9N3M153-M3/I v9n3m153.pdf
V9N3M153-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
18+1.03 EUR
25+0.87 EUR
100+0.68 EUR
250+0.59 EUR
500+0.53 EUR
1000+0.48 EUR
2500+0.43 EUR
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V9N3103-M3/I v9n3103.pdf
V9N3103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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V9N3103-M3/I v9n3103.pdf
V9N3103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1.01 EUR
25+0.85 EUR
100+0.66 EUR
250+0.57 EUR
500+0.52 EUR
1000+0.47 EUR
2500+0.42 EUR
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V9N3202-M3/I v9n3202.pdf
V9N3202-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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Anzahl Preis
6000+0.36 EUR
Mindestbestellmenge: 6000
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V9N3202-M3/I v9n3202.pdf
V9N3202-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
21+0.87 EUR
25+0.82 EUR
100+0.67 EUR
250+0.62 EUR
500+0.53 EUR
1000+0.42 EUR
2500+0.38 EUR
Mindestbestellmenge: 18
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V9N3L63HM3/I v9n3l63.pdf
V9N3L63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.38 EUR
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V9N3L63HM3/I v9n3l63.pdf
V9N3L63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
20+0.92 EUR
25+0.86 EUR
100+0.70 EUR
250+0.65 EUR
500+0.56 EUR
1000+0.44 EUR
2500+0.40 EUR
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V9N3M63HM3/I v9n3m63.pdf
V9N3M63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.37 EUR
Mindestbestellmenge: 6000
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V9N3M63HM3/I v9n3m63.pdf
V9N3M63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
20+0.91 EUR
25+0.86 EUR
100+0.70 EUR
250+0.65 EUR
500+0.55 EUR
1000+0.44 EUR
2500+0.40 EUR
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V9N3103HM3/I v9n3103.pdf
V9N3103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.38 EUR
Mindestbestellmenge: 6000
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V9N3103HM3/I v9n3103.pdf
V9N3103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
19+0.93 EUR
25+0.88 EUR
100+0.72 EUR
250+0.66 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.41 EUR
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V9N3M153HM3/I v9n3m153.pdf
V9N3M153HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.43 EUR
Mindestbestellmenge: 6000
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V9N3M153HM3/I v9n3m153.pdf
V9N3M153HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.80 EUR
16+1.13 EUR
25+0.95 EUR
100+0.74 EUR
250+0.64 EUR
500+0.58 EUR
1000+0.53 EUR
2500+0.48 EUR
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V9N3M103HM3/I v9n3m103.pdf
V9N3M103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.38 EUR
Mindestbestellmenge: 6000
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V9N3M103HM3/I v9n3m103.pdf
V9N3M103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
19+0.93 EUR
25+0.88 EUR
100+0.72 EUR
250+0.66 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.41 EUR
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V9N3202HM3/I v9n3202.pdf
V9N3202HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.40 EUR
Mindestbestellmenge: 6000
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V9N3202HM3/I v9n3202.pdf
V9N3202HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
18+0.99 EUR
25+0.93 EUR
100+0.76 EUR
250+0.70 EUR
500+0.60 EUR
1000+0.48 EUR
2500+0.43 EUR
Mindestbestellmenge: 16
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MSX1PJ-M3/89A msx1pb-msx1pd-msx1pg-msx1pj.pdf
MSX1PJ-M3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 600VWM MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 600V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.07 EUR
9000+0.06 EUR
Mindestbestellmenge: 4500
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MSX1PJ-M3/89A msx1pb-msx1pd-msx1pg-msx1pj.pdf
MSX1PJ-M3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 600VWM MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 600V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
auf Bestellung 13515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
60+0.29 EUR
123+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
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PLZ6V8B-G3/H plzseries.pdf
PLZ6V8B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.66V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.55%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
auf Bestellung 58500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.07 EUR
9000+0.06 EUR
31500+0.06 EUR
Mindestbestellmenge: 4500
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PLZ6V8B-G3/H plzseries.pdf
PLZ6V8B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.66V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±2.55%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
auf Bestellung 62962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
59+0.30 EUR
120+0.15 EUR
500+0.12 EUR
1000+0.09 EUR
2000+0.07 EUR
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SMF7V0A-E3-08 smf5v0atosmf58a.pdf
SMF7V0A-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC SMF
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 843pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.7A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
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SMF7V0A-E3-08 smf5v0atosmf58a.pdf
SMF7V0A-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC SMF
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 843pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.7A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 27350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
50+0.36 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 35
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SM8S14A-1HE3_A/I sm8s.pdf
SM8S14A-1HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM8S14A-1HE3/2D SM8S10_thru_SM8S43A._Aug.31,2016.pdf
SM8S14A-1HE3/2D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-2EFU06HM3/I vs-2efu06hm3.pdf
VS-2EFU06HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-2EFU06HM3/I vs-2efu06hm3.pdf
VS-2EFU06HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 8029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
10+2.10 EUR
100+1.67 EUR
500+1.51 EUR
Mindestbestellmenge: 7
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VS-2EFH01-M3/I vs-2efh01-m3.pdf
VS-2EFH01-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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VS-2EFH01-M3/I vs-2efh01-m3.pdf
VS-2EFH01-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 5952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
46+0.39 EUR
100+0.23 EUR
500+0.20 EUR
1000+0.18 EUR
2000+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 31
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VS-2EFU06-M3/I vs-2efu06-m3.pdf
VS-2EFU06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-2EFU06-M3/I vs-2efu06-m3.pdf
VS-2EFU06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 9230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
10+2.13 EUR
100+1.70 EUR
500+1.44 EUR
1000+1.22 EUR
2000+1.16 EUR
5000+1.11 EUR
Mindestbestellmenge: 7
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VETH100A203S-G3-18 veth100a203s.pdf
VETH100A203S-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VETH100A203S-G3-18 veth100a203s.pdf
VETH100A203S-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
51+0.35 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
VETH100A203SHG3-08 veth100a203s.pdf
VETH100A203SHG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VETH100A203SHG3-08 veth100a203s.pdf
VETH100A203SHG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
VETH100A203SHG3-18 veth100a203s.pdf
VETH100A203SHG3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VETH100A203SHG3-18 veth100a203s.pdf
VETH100A203SHG3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
SM5S26CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S26CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 85.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.06 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
SM5S26CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S26CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 85.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SM5S85CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S85CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 26.3A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.06 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
SM5S85CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S85CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 26.3A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SM5S40CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S40CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 55.8A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.06 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
SM5S40CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S40CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 55.8A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SM5S75CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S75CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 29.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.06 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
SM5S75CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S75CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 29.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SM5S10CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S10CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.06 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
SM5S10CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S10CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SM5S60CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S60CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 37.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.06 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
SM5S60CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S60CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 37.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.53 EUR
100+2.57 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SM5S48CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S48CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.68 EUR
1500+2.29 EUR
2250+2.16 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
SM5S48CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S48CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
10+3.72 EUR
100+3.01 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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