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BZX384B56-E3-08 BZX384B56-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 56V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
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MMSZ5242C-HE3_A-18 MMSZ5242C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Qualification: AEC-Q101
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MMSZ5242C-HE3_A-08 MMSZ5242C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MSX1PG-M3/89A MSX1PG-M3/89A Vishay General Semiconductor - Diodes Division msx1pb-msx1pd-msx1pg-msx1pj.pdf Description: TVS DIODE 400VWM MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
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MSX1PG-M3/89A MSX1PG-M3/89A Vishay General Semiconductor - Diodes Division msx1pb-msx1pd-msx1pg-msx1pj.pdf Description: TVS DIODE 400VWM MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
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S1FLG-GS08 S1FLG-GS08 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GP 400V 700MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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S1FLG-GS08 S1FLG-GS08 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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AS1FGHM3/H AS1FGHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SEG10FGHM3/H SEG10FGHM3/H Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SEG10FGHM3/H SEG10FGHM3/H Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SEG10FG-M3/I SEG10FG-M3/I Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SEG10FG-M3/I SEG10FG-M3/I Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SEG10FG-M3/H SEG10FG-M3/H Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SEG10FG-M3/H SEG10FG-M3/H Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SEG10FGHM3/I SEG10FGHM3/I Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SEG10FGHM3/I SEG10FGHM3/I Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SE20FG-M3/H SE20FG-M3/H Vishay General Semiconductor - Diodes Division se20fd-se20fg-se20fj.pdf Description: DIODE GEN PURP 400V 1.7A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 920 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SE20FG-M3/H SE20FG-M3/H Vishay General Semiconductor - Diodes Division se20fd-se20fg-se20fj.pdf Description: DIODE GEN PURP 400V 1.7A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 920 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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AS1FG-M3/H AS1FG-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SE15FGHM3/H SE15FGHM3/H Vishay General Semiconductor - Diodes Division se15fd-se15fg-se15fj.pdf Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Technology: Standard
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SE15FGHM3/H SE15FGHM3/H Vishay General Semiconductor - Diodes Division se15fd-se15fg-se15fj.pdf Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Technology: Standard
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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1N6276AHE3_B/C 1N6276AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,16V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SB220-E3/73 SB220-E3/73 Vishay General Semiconductor - Diodes Division sb220.pdf Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SB220-E3/73 SB220-E3/73 Vishay General Semiconductor - Diodes Division sb220.pdf Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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VLIN1616-02G-E3-08 VLIN1616-02G-E3-08 Vishay General Semiconductor - Diodes Division vlin1616-02g.pdf Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
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VLIN1616-02G-E3-08 VLIN1616-02G-E3-08 Vishay General Semiconductor - Diodes Division vlin1616-02g.pdf Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
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VLIN1616-02GHE3-08 VLIN1616-02GHE3-08 Vishay General Semiconductor - Diodes Division vlin1616-02g.pdf Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VLIN1616-02GHE3-08 VLIN1616-02GHE3-08 Vishay General Semiconductor - Diodes Division vlin1616-02g.pdf Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-16FR10 VS-16FR10 Vishay General Semiconductor - Diodes Division vs-16frseries.pdf Description: DIODE GEN PURP 100V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A
Current - Reverse Leakage @ Vr: 12 mA @ 100 V
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VS-16F10 VS-16F10 Vishay General Semiconductor - Diodes Division vs-16frseries.pdf Description: DIODE GEN PURP 100V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A
Current - Reverse Leakage @ Vr: 12 mA @ 100 V
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VS-12FR80 VS-12FR80 Vishay General Semiconductor - Diodes Division vs-12fseries.pdf Description: DIODE GEN PURP 800V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
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BZG05B5V1-HM3-08 BZG05B5V1-HM3-08 Vishay General Semiconductor - Diodes Division bzg05b-m-series.pdf Description: DIODE ZENER 5.1V 1.25W DO214AC
Tolerance: ±1.96%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Qualification: AEC-Q101
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BZG05B5V1-HM3-08 BZG05B5V1-HM3-08 Vishay General Semiconductor - Diodes Division bzg05b-m-series.pdf Description: DIODE ZENER 5.1V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±1.96%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 5359 Stücke:
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1N6282AHE3_B/C 1N6282AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,30V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C6V8-HE3_A-18 BZT52C6V8-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 6.8V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C6V8-HE3_A-08 BZT52C6V8-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 6.8V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KA20AHE3/51 Vishay General Semiconductor - Diodes Division 1.5KA6.8 thru 1.5KA47A.pdf Description: TVS DIODE 17.1VWM 27.7VC 1.5KA
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 54.2A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: 1.5kA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KA20HE3/51 Vishay General Semiconductor - Diodes Division 1.5KA6.8 thru 1.5KA47A.pdf Description: TVS DIODE 16.2VWM 29.1VC 1.5KA
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 51.5A
Voltage - Reverse Standoff (Typ): 16.2V
Supplier Device Package: 1.5kA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18V
Voltage - Clamping (Max) @ Ipp: 29.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SML4745AHE3_A/H SML4745AHE3_A/H Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 16V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S8MS-E3/I S8MS-E3/I Vishay General Semiconductor - Diodes Division s8gs_s8js_s8ks_s8ms.pdf Description: 8A, 1000V, STD RECT , SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery > 500ns, > 2A (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 63pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S8MS-E3/I S8MS-E3/I Vishay General Semiconductor - Diodes Division s8gs_s8js_s8ks_s8ms.pdf Description: 8A, 1000V, STD RECT , SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery > 500ns, > 2A (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 63pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 5658 Stücke:
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S8CMHM3/I Vishay General Semiconductor - Diodes Division s8cgjkm.pdf Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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S8CMHM3/I Vishay General Semiconductor - Diodes Division s8cgjkm.pdf Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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SE30PAG-M3/I SE30PAG-M3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 400V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SE30PAG-M3/I SE30PAG-M3/I Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 400V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MMSZ5264B-E3-08 MMSZ5264B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
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MMSZ5264B-E3-08 MMSZ5264B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
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72+0.25 EUR
103+0.17 EUR
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500+0.08 EUR
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MMSZ5264B-HE3_A-18 MMSZ5264B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
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MMSZ5264B-HE3_A-08 MMSZ5264B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5264C-HE3_A-08 MMSZ5264C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5264C-HE3_A-18 MMSZ5264C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SML4744HE3_A/I SML4744HE3_A/I Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 15V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SML4744HE3_A/H SML4744HE3_A/H Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 15V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B33-G3-08 BZX84B33-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
auf Bestellung 15000 Stücke:
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6000+0.07 EUR
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BZX84B33-G3-08 BZX84B33-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
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38+0.48 EUR
55+0.32 EUR
112+0.16 EUR
500+0.13 EUR
1000+0.09 EUR
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5KP54AHE3/51 Vishay General Semiconductor - Diodes Division Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B10-G3-18 BZX384B10-G3-18 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 10V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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10000+0.07 EUR
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BZX384B10-G3-18 BZX384B10-G3-18 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 10V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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49+0.36 EUR
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VS-6CWQ03FNTRL-M3 VS-6CWQ03FNTRL-M3 Vishay General Semiconductor - Diodes Division 6cwq03fn.pdf Description: DIODE ARR SCHOTT 30V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
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VS-6CWQ03FNTRL-M3 VS-6CWQ03FNTRL-M3 Vishay General Semiconductor - Diodes Division 6cwq03fn.pdf Description: DIODE ARR SCHOTT 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
auf Bestellung 3000 Stücke:
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15+1.25 EUR
17+1.08 EUR
100+0.75 EUR
500+0.62 EUR
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BZX384B56-E3-08 bzx384.pdf
BZX384B56-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
auf Bestellung 14400 Stücke:
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Anzahl Preis
72+0.25 EUR
100+0.18 EUR
205+0.09 EUR
500+0.08 EUR
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MMSZ5242C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5242C-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5242C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5242C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MSX1PG-M3/89A msx1pb-msx1pd-msx1pg-msx1pj.pdf
MSX1PG-M3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 400VWM MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
auf Bestellung 22500 Stücke:
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Anzahl Preis
4500+0.11 EUR
9000+0.08 EUR
Mindestbestellmenge: 4500
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MSX1PG-M3/89A msx1pb-msx1pd-msx1pg-msx1pj.pdf
MSX1PG-M3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 400VWM MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.21 EUR
500+0.18 EUR
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S1FLG-GS08 s1flbdgjkm.pdf
S1FLG-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 21000 Stücke:
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Anzahl Preis
3000+0.07 EUR
6000+0.07 EUR
9000+0.06 EUR
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S1FLG-GS08 s1flbdgjkm.pdf
S1FLG-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 24000 Stücke:
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Anzahl Preis
32+0.56 EUR
46+0.39 EUR
100+0.20 EUR
500+0.16 EUR
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AS1FGHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 16323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
39+0.46 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.17 EUR
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SEG10FGHM3/H seg10fg.pdf
SEG10FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.10 EUR
Mindestbestellmenge: 3000
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SEG10FGHM3/H seg10fg.pdf
SEG10FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.49 EUR
100+0.25 EUR
500+0.20 EUR
1000+0.15 EUR
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SEG10FG-M3/I seg10fg.pdf
SEG10FG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SEG10FG-M3/I seg10fg.pdf
SEG10FG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 9937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
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SEG10FG-M3/H seg10fg.pdf
SEG10FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.08 EUR
Mindestbestellmenge: 3000
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SEG10FG-M3/H seg10fg.pdf
SEG10FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 8410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
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SEG10FGHM3/I seg10fg.pdf
SEG10FGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SEG10FGHM3/I seg10fg.pdf
SEG10FGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 9780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.49 EUR
100+0.25 EUR
500+0.20 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
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SE20FG-M3/H se20fd-se20fg-se20fj.pdf
SE20FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.7A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 920 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
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SE20FG-M3/H se20fd-se20fg-se20fj.pdf
SE20FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.7A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 920 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 13808 Stücke:
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Anzahl Preis
25+0.72 EUR
35+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
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AS1FG-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 17990 Stücke:
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Anzahl Preis
25+0.72 EUR
40+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
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SE15FGHM3/H se15fd-se15fg-se15fj.pdf
SE15FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Technology: Standard
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
30000+0.14 EUR
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SE15FGHM3/H se15fd-se15fg-se15fj.pdf
SE15FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Technology: Standard
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
37+0.48 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.20 EUR
Mindestbestellmenge: 23
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1N6276AHE3_B/C 15ke.pdf
1N6276AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,16V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SB220-E3/73 sb220.pdf
SB220-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SB220-E3/73 sb220.pdf
SB220-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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VLIN1616-02G-E3-08 vlin1616-02g.pdf
VLIN1616-02G-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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VLIN1616-02G-E3-08 vlin1616-02g.pdf
VLIN1616-02G-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
36+0.50 EUR
100+0.25 EUR
500+0.21 EUR
1000+0.15 EUR
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VLIN1616-02GHE3-08 vlin1616-02g.pdf
VLIN1616-02GHE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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VLIN1616-02GHE3-08 vlin1616-02g.pdf
VLIN1616-02GHE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.54 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
Mindestbestellmenge: 23
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VS-16FR10 vs-16frseries.pdf
VS-16FR10
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A
Current - Reverse Leakage @ Vr: 12 mA @ 100 V
auf Bestellung 71 Stücke:
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Anzahl Preis
3+7.41 EUR
10+5.16 EUR
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VS-16F10 vs-16frseries.pdf
VS-16F10
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A
Current - Reverse Leakage @ Vr: 12 mA @ 100 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.00 EUR
10+5.89 EUR
100+4.76 EUR
Mindestbestellmenge: 3
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VS-12FR80 vs-12fseries.pdf
VS-12FR80
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.70 EUR
10+6.83 EUR
Mindestbestellmenge: 2
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BZG05B5V1-HM3-08 bzg05b-m-series.pdf
BZG05B5V1-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.25W DO214AC
Tolerance: ±1.96%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.37 EUR
3000+0.34 EUR
4500+0.28 EUR
Mindestbestellmenge: 1500
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BZG05B5V1-HM3-08 bzg05b-m-series.pdf
BZG05B5V1-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±1.96%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 5359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.88 EUR
100+0.57 EUR
500+0.44 EUR
Mindestbestellmenge: 13
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1N6282AHE3_B/C 15ke.pdf
1N6282AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,30V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C6V8-HE3_A-18 bzt52_series.pdf
BZT52C6V8-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C6V8-HE3_A-08 bzt52_series.pdf
BZT52C6V8-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KA20AHE3/51 1.5KA6.8 thru 1.5KA47A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC 1.5KA
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 54.2A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: 1.5kA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KA20HE3/51 1.5KA6.8 thru 1.5KA47A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16.2VWM 29.1VC 1.5KA
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 51.5A
Voltage - Reverse Standoff (Typ): 16.2V
Supplier Device Package: 1.5kA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18V
Voltage - Clamping (Max) @ Ipp: 29.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SML4745AHE3_A/H sml4738.pdf
SML4745AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S8MS-E3/I s8gs_s8js_s8ks_s8ms.pdf
S8MS-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 8A, 1000V, STD RECT , SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery > 500ns, > 2A (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 63pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.30 EUR
Mindestbestellmenge: 3500
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S8MS-E3/I s8gs_s8js_s8ks_s8ms.pdf
S8MS-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 8A, 1000V, STD RECT , SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery > 500ns, > 2A (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 63pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 5658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
21+0.88 EUR
100+0.57 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
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S8CMHM3/I s8cgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.51 EUR
Mindestbestellmenge: 3500
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S8CMHM3/I s8cgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 6450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
16+1.15 EUR
100+0.80 EUR
500+0.64 EUR
1000+0.59 EUR
Mindestbestellmenge: 11
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SE30PAG-M3/I se30pab.pdf
SE30PAG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SE30PAG-M3/I se30pab.pdf
SE30PAG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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MMSZ5264B-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5264B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Produkt ist nicht verfügbar
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MMSZ5264B-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5264B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
auf Bestellung 2129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
103+0.17 EUR
200+0.09 EUR
500+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 72
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MMSZ5264B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5264B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5264B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5264B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5264C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5264C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5264C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5264C-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SML4744HE3_A/I sml4738.pdf
SML4744HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SML4744HE3_A/H sml4738.pdf
SML4744HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B33-G3-08 bzx84-g_series.pdf
BZX84B33-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.07 EUR
9000+0.06 EUR
Mindestbestellmenge: 3000
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BZX84B33-G3-08 bzx84-g_series.pdf
BZX84B33-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
55+0.32 EUR
112+0.16 EUR
500+0.13 EUR
1000+0.09 EUR
Mindestbestellmenge: 38
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5KP54AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B10-G3-18 bzx384g.pdf
BZX384B10-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.07 EUR
Mindestbestellmenge: 10000
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BZX384B10-G3-18 bzx384g.pdf
BZX384B10-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.36 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.10 EUR
2000+0.09 EUR
5000+0.08 EUR
Mindestbestellmenge: 34
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VS-6CWQ03FNTRL-M3 6cwq03fn.pdf
VS-6CWQ03FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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VS-6CWQ03FNTRL-M3 6cwq03fn.pdf
VS-6CWQ03FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
17+1.08 EUR
100+0.75 EUR
500+0.62 EUR
1000+0.53 EUR
Mindestbestellmenge: 15
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