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BZW04P5V8B-E3/73 BZW04P5V8B-E3/73 Vishay General Semiconductor - Diodes Division BZW04P-5V8_thru_376.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
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BZW04P5V8BHE3/73 BZW04P5V8BHE3/73 Vishay General Semiconductor - Diodes Division BZW04P-5V8_thru_376.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
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BZW04P64B-E3/73 BZW04P64B-E3/73 Vishay General Semiconductor - Diodes Division BZW04P-5V8_thru_376.pdf Description: TVS DIODE 64.1VWM 103VC DO204AL
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BZW04P70B-E3/73 BZW04P70B-E3/73 Vishay General Semiconductor - Diodes Division BZW04P-5V8_thru_376.pdf Description: TVS DIODE 70.1VWM 113VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZW04P70BHE3/73 BZW04P70BHE3/73 Vishay General Semiconductor - Diodes Division BZW04P-5V8_thru_376.pdf Description: TVS DIODE 70.1VWM 113VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZW04P85HE3/73 BZW04P85HE3/73 Vishay General Semiconductor - Diodes Division BZW04P-5V8_thru_376.pdf Description: TVS DIODE 85.5VWM 137VC DO204AL
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BZW04P8V5BHE3/73 BZW04P8V5BHE3/73 Vishay General Semiconductor - Diodes Division BZW04P-5V8_thru_376.pdf Description: TVS DIODE 8.55VWM 14.5VC DO204AL
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BZW04P9V4HE3/73 BZW04P9V4HE3/73 Vishay General Semiconductor - Diodes Division BZW04P-5V8_thru_376.pdf Description: TVS DIODE 9.4VWM 15.6VC DO204AL
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DGP15-E3/73 DGP15-E3/73 Vishay General Semiconductor - Diodes Division cgp15.pdf Description: DIODE GP 1.5KV 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.49 EUR
Mindestbestellmenge: 2000
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EGP10A-E3/73 EGP10A-E3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 50V 1A DO204AL
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EGP10AHE3/73 EGP10AHE3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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EGP10B-E3/73 EGP10B-E3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 100V 1A DO204AL
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EGP10BHE3/73 EGP10BHE3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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EGP10C-E3/73 EGP10C-E3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 150V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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EGP10CHE3/73 EGP10CHE3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 150V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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EGP10D-E3/73 EGP10D-E3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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EGP10DHE3/73 EGP10DHE3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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EGP10F-E3/73 EGP10F-E3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 300V 1A DO204AL
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EGP10FHE3/73 EGP10FHE3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 300V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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EGP10G-E3/73 EGP10G-E3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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EGP10GHE3/73 EGP10GHE3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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EGP20B-E3/73 EGP20B-E3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 3994 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.58 EUR
Mindestbestellmenge: 2000
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EGP20BHE3/73 EGP20BHE3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 100V 2A DO204AC
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EGP20C-E3/73 EGP20C-E3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 150V 2A DO204AC
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EGP20CHE3/73 EGP20CHE3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 150V 2A DO204AC
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EGP20D-E3/73 EGP20D-E3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.61 EUR
6000+0.58 EUR
10000+0.55 EUR
Mindestbestellmenge: 2000
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EGP20DHE3/73 EGP20DHE3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 200V 2A DO204AC
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EGP20G-E3/73 EGP20G-E3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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EGP20GHE3/73 EGP20GHE3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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EGP30B-E3/73 EGP30B-E3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE GEN PURP 100V 3A GP20
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EGP30BHE3/73 EGP30BHE3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE GEN PURP 100V 3A GP20
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EGP30C-E3/73 EGP30C-E3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE GEN PURP 150V 3A GP20
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EGP30CHE3/73 EGP30CHE3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE GEN PURP 150V 3A GP20
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EGP30D-E3/73 EGP30D-E3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE STANDARD 200V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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EGP30DHE3/73 EGP30DHE3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE GEN PURP 200V 3A GP20
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EGP30F-E3/73 EGP30F-E3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE STANDARD 300V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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EGP30FHE3/73 EGP30FHE3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE GEN PURP 300V 3A GP20
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EGP30G-E3/73 EGP30G-E3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE GEN PURP 400V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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EGP30GHE3/73 EGP30GHE3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE GEN PURP 400V 3A GP20
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EGP50A-E3/73 EGP50A-E3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE STANDARD 50V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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EGP50AHE3/73 EGP50AHE3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE GEN PURP 50V 5A GP20
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EGP50B-E3/73 EGP50B-E3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE STANDARD 100V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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EGP50BHE3/73 EGP50BHE3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE GEN PURP 100V 5A GP20
Produkt ist nicht verfügbar
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EGP50C-E3/73 EGP50C-E3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE STANDARD 150V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50CHE3/73 EGP50CHE3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE GEN PURP 150V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50D-E3/73 EGP50D-E3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE STANDARD 200V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50DHE3/73 EGP50DHE3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE GEN PURP 200V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50F-E3/73 EGP50F-E3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE GEN PURP 300V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50FHE3/73 EGP50FHE3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE GEN PURP 300V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50G-E3/73 EGP50G-E3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE STANDARD 400V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50GHE3/73 EGP50GHE3/73 Vishay General Semiconductor - Diodes Division EGP50A-G.pdf Description: DIODE GEN PURP 400V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP10B-E3/73 FGP10B-E3/73 Vishay General Semiconductor - Diodes Division FGP10B%2CC%2CD.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP10BHE3/73 FGP10BHE3/73 Vishay General Semiconductor - Diodes Division FGP10B%2CC%2CD.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50B-E3/73 FGP50B-E3/73 Vishay General Semiconductor - Diodes Division FGP50B%2CC%2CD.pdf Description: DIODE STANDARD 100V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50BHE3/73 FGP50BHE3/73 Vishay General Semiconductor - Diodes Division FGP50B,C,D.pdf Description: DIODE GEN PURP 100V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50C-E3/73 FGP50C-E3/73 Vishay General Semiconductor - Diodes Division FGP50B,C,D.pdf Description: DIODE GEN PURP 150V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50CHE3/73 FGP50CHE3/73 Vishay General Semiconductor - Diodes Division FGP50B,C,D.pdf Description: DIODE GEN PURP 150V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50D-E3/73 FGP50D-E3/73 Vishay General Semiconductor - Diodes Division FGP50B%2CC%2CD.pdf Description: DIODE STANDARD 200V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50DHE3/73 FGP50DHE3/73 Vishay General Semiconductor - Diodes Division FGP50B,C,D.pdf Description: DIODE GEN PURP 200V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHR16-E3/73 Vishay General Semiconductor - Diodes Division GHR16.pdf Description: DIODE GEN PURP 1.6KV 500MA R1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZW04P5V8B-E3/73 BZW04P-5V8_thru_376.pdf
BZW04P5V8B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZW04P5V8BHE3/73 BZW04P-5V8_thru_376.pdf
BZW04P5V8BHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZW04P64B-E3/73 BZW04P-5V8_thru_376.pdf
BZW04P64B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 103VC DO204AL
Produkt ist nicht verfügbar
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BZW04P70B-E3/73 BZW04P-5V8_thru_376.pdf
BZW04P70B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70.1VWM 113VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZW04P70BHE3/73 BZW04P-5V8_thru_376.pdf
BZW04P70BHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70.1VWM 113VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZW04P85HE3/73 BZW04P-5V8_thru_376.pdf
BZW04P85HE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85.5VWM 137VC DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZW04P8V5BHE3/73 BZW04P-5V8_thru_376.pdf
BZW04P8V5BHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO204AL
Produkt ist nicht verfügbar
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BZW04P9V4HE3/73 BZW04P-5V8_thru_376.pdf
BZW04P9V4HE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 15.6VC DO204AL
Produkt ist nicht verfügbar
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DGP15-E3/73 cgp15.pdf
DGP15-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.5KV 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.49 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
EGP10A-E3/73 egp10a.pdf
EGP10A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10AHE3/73 egp10a.pdf
EGP10AHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10B-E3/73 egp10a.pdf
EGP10B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10BHE3/73 egp10a.pdf
EGP10BHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10C-E3/73 egp10a.pdf
EGP10C-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10CHE3/73 egp10a.pdf
EGP10CHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10D-E3/73 egp10a.pdf
EGP10D-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10DHE3/73 egp10a.pdf
EGP10DHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10F-E3/73 egp10a.pdf
EGP10F-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 1A DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10FHE3/73 egp10a.pdf
EGP10FHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10G-E3/73 egp10a.pdf
EGP10G-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10GHE3/73 egp10a.pdf
EGP10GHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP20B-E3/73 egp20a.pdf
EGP20B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 3994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.58 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
EGP20BHE3/73 egp20a.pdf
EGP20BHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP20C-E3/73 egp20a.pdf
EGP20C-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO204AC
Produkt ist nicht verfügbar
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EGP20CHE3/73 egp20a.pdf
EGP20CHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO204AC
Produkt ist nicht verfügbar
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EGP20D-E3/73 egp20a.pdf
EGP20D-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 12000 Stücke:
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Mindestbestellmenge: 2000
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EGP20DHE3/73 egp20a.pdf
EGP20DHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO204AC
Produkt ist nicht verfügbar
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EGP20G-E3/73 egp20a.pdf
EGP20G-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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EGP20GHE3/73 egp20a.pdf
EGP20GHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP30B-E3/73 EGP30x.pdf
EGP30B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A GP20
Produkt ist nicht verfügbar
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EGP30BHE3/73 EGP30x.pdf
EGP30BHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP30C-E3/73 EGP30x.pdf
EGP30C-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 3A GP20
Produkt ist nicht verfügbar
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EGP30CHE3/73 EGP30x.pdf
EGP30CHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 3A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP30D-E3/73 EGP30x.pdf
EGP30D-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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EGP30DHE3/73 EGP30x.pdf
EGP30DHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A GP20
Produkt ist nicht verfügbar
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EGP30F-E3/73 EGP30x.pdf
EGP30F-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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EGP30FHE3/73 EGP30x.pdf
EGP30FHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 3A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP30G-E3/73 EGP30x.pdf
EGP30G-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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EGP30GHE3/73 EGP30x.pdf
EGP30GHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A GP20
Produkt ist nicht verfügbar
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EGP50A-E3/73 EGP50A-G.pdf
EGP50A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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EGP50AHE3/73 EGP50A-G.pdf
EGP50AHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 5A GP20
Produkt ist nicht verfügbar
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EGP50B-E3/73 EGP50A-G.pdf
EGP50B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50BHE3/73 EGP50A-G.pdf
EGP50BHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50C-E3/73 EGP50A-G.pdf
EGP50C-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50CHE3/73 EGP50A-G.pdf
EGP50CHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50D-E3/73 EGP50A-G.pdf
EGP50D-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50DHE3/73 EGP50A-G.pdf
EGP50DHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50F-E3/73 EGP50A-G.pdf
EGP50F-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50FHE3/73 EGP50A-G.pdf
EGP50FHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50G-E3/73 EGP50A-G.pdf
EGP50G-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP50GHE3/73 EGP50A-G.pdf
EGP50GHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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FGP10B-E3/73 FGP10B%2CC%2CD.pdf
FGP10B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP10BHE3/73 FGP10B%2CC%2CD.pdf
FGP10BHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50B-E3/73 FGP50B%2CC%2CD.pdf
FGP50B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50BHE3/73 FGP50B,C,D.pdf
FGP50BHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50C-E3/73 FGP50B,C,D.pdf
FGP50C-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50CHE3/73 FGP50B,C,D.pdf
FGP50CHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50D-E3/73 FGP50B%2CC%2CD.pdf
FGP50D-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGP50DHE3/73 FGP50B,C,D.pdf
FGP50DHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 5A GP20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHR16-E3/73 GHR16.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 500MA R1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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