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SMCJ70CAHE3_A/I SMCJ70CAHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 13.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SMCJ70A-E3/9AT SMCJ70A-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 13.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
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SMCJ70A-E3/9AT SMCJ70A-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 13.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
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1N4448WS-HE3_A-08 Vishay General Semiconductor - Diodes Division 1n4448.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
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1N4448WS-HE3_A-18 Vishay General Semiconductor - Diodes Division 1n4448.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
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S1BK-M3/I S1BK-M3/I Vishay General Semiconductor - Diodes Division doc?98674 Description: RECTIFIER, STANDARD RECOVERY, 1A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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S1BK-M3/I S1BK-M3/I Vishay General Semiconductor - Diodes Division doc?98674 Description: RECTIFIER, STANDARD RECOVERY, 1A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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S2BK-M3/I S2BK-M3/I Vishay General Semiconductor - Diodes Division doc?98675 Description: RECTIFIER, STANDARD RECOVERY, 2A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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S2BK-M3/I S2BK-M3/I Vishay General Semiconductor - Diodes Division doc?98675 Description: RECTIFIER, STANDARD RECOVERY, 2A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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S5BK-M3/I S5BK-M3/I Vishay General Semiconductor - Diodes Division doc?98677 Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S5BK-M3/I S5BK-M3/I Vishay General Semiconductor - Diodes Division doc?98677 Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S3BK-M3/I S3BK-M3/I Vishay General Semiconductor - Diodes Division doc?98676 Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S3BK-M3/I S3BK-M3/I Vishay General Semiconductor - Diodes Division doc?98676 Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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TLZ33C-GS08 TLZ33C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 33V 500MW SOD80
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 nA @ 29.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
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TLZ33C-GS08 TLZ33C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 33V 500MW SOD80
Current - Reverse Leakage @ Vr: 40 nA @ 29.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
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VSSB410S-E3/5BT VSSB410S-E3/5BT Vishay General Semiconductor - Diodes Division vssb410s-e3.pdf Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 70 V
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VSSB410S-E3/5BT VSSB410S-E3/5BT Vishay General Semiconductor - Diodes Division vssb410s-e3.pdf Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 70 V
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BZX384C16-E3-18 BZX384C16-E3-18 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
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BZX384C16-E3-18 BZX384C16-E3-18 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
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VS-SF50SA120 VS-SF50SA120 Vishay General Semiconductor - Diodes Division doc?97289 Description: POWER MODULE, SINGLE SWITCH - SI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 59.2mOhm @ 50A, 15V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 7.11mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 1000 V
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VS-SF100SA120 Vishay General Semiconductor - Diodes Division doc?97290 Description: POWER MODULE, SINGLE SWITCH - SI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 100A, 15V
Power Dissipation (Max): 468W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 14.22mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4624 pF @ 1000 V
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VS-SF150SA120 VS-SF150SA120 Vishay General Semiconductor - Diodes Division doc?97186 Description: POWER MODULE, SINGLE SWITCH - SI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
Rds On (Max) @ Id, Vgs: 21.33mOhm @ 150A, 15V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 21.33mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 1000 V
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VS-SF200SA120 VS-SF200SA120 Vishay General Semiconductor - Diodes Division doc?97291 Description: POWER MODULE, SINGLE SWITCH - SI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 17.25mOhm @ 200A, 15V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 28.44mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 333 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 1000 V
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BZX384B4V7-HE3_A08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 4.7V 200MW SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Power - Max: 200 mW
Grade: Automotive
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZX384B4V7-HE3_A18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 4.7V 200MW SOD323
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Power - Max: 200 mW
Grade: Automotive
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 150°C (TJ)
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MBRB3045CTHM3/I MBRB3045CTHM3/I Vishay General Semiconductor - Diodes Division mbrb3045ct.pdf Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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SMCJ18CAHE3_A/H SMCJ18CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ18CAHE3_A/H SMCJ18CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ120CAHE3_A/I SMCJ120CAHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ120CAHE3_A/H SMCJ120CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ120CAHM3_A/I SMCJ120CAHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 120VWM 193VC DO214AB
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 120V
Current - Peak Pulse (10/1000µs): 7.8A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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SMCJ120CAHM3_A/H SMCJ120CAHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 120VWM 193VC DO214AB
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 120V
Current - Peak Pulse (10/1000µs): 7.8A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
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SMBJ58CAHE3_B/H SMBJ58CAHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ58CAHE3_B/H SMBJ58CAHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ60CAHE3_B/H SMBJ60CAHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 60VWM 96.8VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ60CAHE3_B/H SMBJ60CAHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 60VWM 96.8VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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BZG04-120-M3-18 BZG04-120-M3-18 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 150V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Voltage - Zener (Nom) (Vz): 150 V
Operating Temperature: 150°C (TJ)
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BZT52C7V5-G3-08 BZT52C7V5-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 7.5V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZT52C7V5-G3-08 BZT52C7V5-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 7.5V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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V6PW60HM3/I V6PW60HM3/I Vishay General Semiconductor - Diodes Division v6pw60.pdf Description: DIODE SCHOTTKY 60V 6A SLIMDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
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V6PW60HM3/I V6PW60HM3/I Vishay General Semiconductor - Diodes Division v6pw60.pdf Description: DIODE SCHOTTKY 60V 6A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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S5D-E3/9AT S5D-E3/9AT Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 200V 5A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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S5D-E3/9AT S5D-E3/9AT Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 200V 5A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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VSSAF522-M3/H VSSAF522-M3/H Vishay General Semiconductor - Diodes Division vssaf522.pdf Description: DIODE SCHOTTKY 200V 2A DO221AC
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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VSSAF522-M3/H VSSAF522-M3/H Vishay General Semiconductor - Diodes Division vssaf522.pdf Description: DIODE SCHOTTKY 200V 2A DO221AC
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
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SM6T22AHM3/H SM6T22AHM3/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 18.8VWM 30.6V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM6T22AHM3/I SM6T22AHM3/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 18.8VWM 30.6V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLZ3V3B-GS18 TLZ3V3B-GS18 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 3.3V 500MW SOD80
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLZ3V3B-GS18 TLZ3V3B-GS18 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 3.3V 500MW SOD80
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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VS-3C02EJ12-M3/H VS-3C02EJ12-M3/H Vishay General Semiconductor - Diodes Division doc?97286 Description: RECTIFIER, SIC, 1200V, 2A, SINGL
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 9.5pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: DO-221AC (SlimSMA)
Current - Max: 2 A
Power Dissipation (Max): 12.5 W
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VS-3C02EJ12-M3/H VS-3C02EJ12-M3/H Vishay General Semiconductor - Diodes Division doc?97286 Description: RECTIFIER, SIC, 1200V, 2A, SINGL
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 9.5pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: DO-221AC (SlimSMA)
Current - Max: 2 A
Power Dissipation (Max): 12.5 W
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SMBJ64AHM3_B/I SMBJ64AHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ64AHE3_B/I SMBJ64AHE3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ64AHM3_A/I SMBJ64AHM3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ64AHE3_B/H SMBJ64AHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ64AHM3_B/H SMBJ64AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8P22-M3/H V8P22-M3/H Vishay General Semiconductor - Diodes Division v8p22.pdf Description: DIODE SCHOTTKY 200V 2.9A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V8P22-M3/H V8P22-M3/H Vishay General Semiconductor - Diodes Division v8p22.pdf Description: DIODE SCHOTTKY 200V 2.9A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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V8P22HM3/H V8P22HM3/H Vishay General Semiconductor - Diodes Division v8p22.pdf Description: DIODE SCHOTTKY 200V 2.9A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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V8P22HM3/H V8P22HM3/H Vishay General Semiconductor - Diodes Division v8p22.pdf Description: DIODE SCHOTTKY 200V 2.9A TO277A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
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SMCJ70CAHE3_A/I smcj.pdf
SMCJ70CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70VWM 113VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 13.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMCJ70A-E3/9AT smcj.pdf
SMCJ70A-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70VWM 113VC DO214AB
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 13.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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SMCJ70A-E3/9AT smcj.pdf
SMCJ70A-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70VWM 113VC DO214AB
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 13.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
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1N4448WS-HE3_A-08 1n4448.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4448WS-HE3_A-18 1n4448.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S1BK-M3/I doc?98674
S1BK-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 1A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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S1BK-M3/I doc?98674
S1BK-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 1A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 3190 Stücke:
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S2BK-M3/I doc?98675
S2BK-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 2A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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3200+0.18 EUR
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S2BK-M3/I doc?98675
S2BK-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 2A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 3200 Stücke:
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26+0.82 EUR
42+0.5 EUR
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S5BK-M3/I doc?98677
S5BK-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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3200+0.19 EUR
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S5BK-M3/I doc?98677
S5BK-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 3200 Stücke:
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24+0.88 EUR
39+0.54 EUR
100+0.35 EUR
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S3BK-M3/I doc?98676
S3BK-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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3200+0.19 EUR
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S3BK-M3/I doc?98676
S3BK-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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AnzahlPrivatkunde
24+0.88 EUR
39+0.54 EUR
100+0.35 EUR
500+0.26 EUR
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TLZ33C-GS08 tlz.pdf
TLZ33C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD80
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 nA @ 29.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
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TLZ33C-GS08 tlz.pdf
TLZ33C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD80
Current - Reverse Leakage @ Vr: 40 nA @ 29.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
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VSSB410S-E3/5BT vssb410s-e3.pdf
VSSB410S-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 70 V
auf Bestellung 6400 Stücke:
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VSSB410S-E3/5BT vssb410s-e3.pdf
VSSB410S-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 70 V
auf Bestellung 6400 Stücke:
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24+0.9 EUR
31+0.68 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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BZX384C16-E3-18 PdfFile_148489.pdf
BZX384C16-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Produkt ist nicht verfügbar
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BZX384C16-E3-18 PdfFile_148489.pdf
BZX384C16-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
auf Bestellung 4187 Stücke:
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AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.17 EUR
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VS-SF50SA120 doc?97289
VS-SF50SA120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: POWER MODULE, SINGLE SWITCH - SI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 59.2mOhm @ 50A, 15V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 7.11mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 1000 V
auf Bestellung 179 Stücke:
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VS-SF100SA120 doc?97290
Hersteller: Vishay General Semiconductor - Diodes Division
Description: POWER MODULE, SINGLE SWITCH - SI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 100A, 15V
Power Dissipation (Max): 468W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 14.22mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4624 pF @ 1000 V
auf Bestellung 158 Stücke:
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VS-SF150SA120 doc?97186
VS-SF150SA120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: POWER MODULE, SINGLE SWITCH - SI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
Rds On (Max) @ Id, Vgs: 21.33mOhm @ 150A, 15V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 21.33mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 1000 V
auf Bestellung 160 Stücke:
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VS-SF200SA120 doc?97291
VS-SF200SA120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: POWER MODULE, SINGLE SWITCH - SI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 17.25mOhm @ 200A, 15V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 28.44mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 333 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 1000 V
auf Bestellung 126 Stücke:
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BZX384B4V7-HE3_A08 bzx384.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 200MW SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Power - Max: 200 mW
Grade: Automotive
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX384B4V7-HE3_A18 bzx384.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 200MW SOD323
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Power - Max: 200 mW
Grade: Automotive
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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MBRB3045CTHM3/I mbrb3045ct.pdf
MBRB3045CTHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ18CAHE3_A/H smcj.pdf
SMCJ18CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3400 Stücke:
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850+0.86 EUR
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SMCJ18CAHE3_A/H smcj.pdf
SMCJ18CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4149 Stücke:
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12+1.81 EUR
100+1.2 EUR
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SMCJ120CAHE3_A/I smcj.pdf
SMCJ120CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ120CAHE3_A/H smcj.pdf
SMCJ120CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ120CAHM3_A/I smcj.pdf
SMCJ120CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AB
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 120V
Current - Peak Pulse (10/1000µs): 7.8A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ120CAHM3_A/H smcj.pdf
SMCJ120CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AB
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 120V
Current - Peak Pulse (10/1000µs): 7.8A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Produkt ist nicht verfügbar
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SMBJ58CAHE3_B/H smbj.pdf
SMBJ58CAHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5250 Stücke:
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750+0.57 EUR
1500+0.52 EUR
2250+0.5 EUR
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SMBJ58CAHE3_B/H smbj.pdf
SMBJ58CAHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5758 Stücke:
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11+1.95 EUR
18+1.21 EUR
100+0.8 EUR
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SMBJ60CAHE3_B/H smbj.pdf
SMBJ60CAHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96.8VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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750+0.57 EUR
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SMBJ60CAHE3_B/H smbj.pdf
SMBJ60CAHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96.8VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
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11+1.95 EUR
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100+0.8 EUR
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BZG04-120-M3-18 bzg04-m-series.pdf
BZG04-120-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Voltage - Zener (Nom) (Vz): 150 V
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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BZT52C7V5-G3-08 bzt52-g.pdf
BZT52C7V5-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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3000+0.092 EUR
6000+0.082 EUR
9000+0.077 EUR
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BZT52C7V5-G3-08 bzt52-g.pdf
BZT52C7V5-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 14800 Stücke:
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AnzahlPrivatkunde
40+0.52 EUR
57+0.37 EUR
100+0.24 EUR
500+0.15 EUR
1000+0.11 EUR
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V6PW60HM3/I v6pw60.pdf
V6PW60HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 6A SLIMDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Produkt ist nicht verfügbar
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V6PW60HM3/I v6pw60.pdf
V6PW60HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 6A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2746 Stücke:
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AnzahlPrivatkunde
16+1.32 EUR
24+0.89 EUR
100+0.7 EUR
500+0.55 EUR
1000+0.45 EUR
2000+0.43 EUR
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S5D-E3/9AT s5a.pdf
S5D-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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S5D-E3/9AT s5a.pdf
S5D-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 12490 Stücke:
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46+0.46 EUR
76+0.27 EUR
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VSSAF522-M3/H vssaf522.pdf
VSSAF522-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2A DO221AC
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 17500 Stücke:
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VSSAF522-M3/H vssaf522.pdf
VSSAF522-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2A DO221AC
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 18066 Stücke:
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15+1.4 EUR
24+0.89 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
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SM6T22AHM3/H sm6t.pdf
SM6T22AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T22AHM3/I sm6t.pdf
SM6T22AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLZ3V3B-GS18 tlz.pdf
TLZ3V3B-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW SOD80
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLZ3V3B-GS18 tlz.pdf
TLZ3V3B-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW SOD80
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 9820 Stücke:
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48+0.44 EUR
76+0.27 EUR
129+0.17 EUR
500+0.11 EUR
1000+0.069 EUR
2000+0.068 EUR
5000+0.067 EUR
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VS-3C02EJ12-M3/H doc?97286
VS-3C02EJ12-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, SIC, 1200V, 2A, SINGL
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 9.5pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: DO-221AC (SlimSMA)
Current - Max: 2 A
Power Dissipation (Max): 12.5 W
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
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VS-3C02EJ12-M3/H doc?97286
VS-3C02EJ12-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, SIC, 1200V, 2A, SINGL
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 9.5pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: DO-221AC (SlimSMA)
Current - Max: 2 A
Power Dissipation (Max): 12.5 W
auf Bestellung 7225 Stücke:
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7+3.03 EUR
10+2.23 EUR
25+2.02 EUR
100+1.8 EUR
250+1.69 EUR
500+1.63 EUR
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SMBJ64AHM3_B/I smbj.pdf
SMBJ64AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ64AHE3_B/I smbj.pdf
SMBJ64AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ64AHM3_A/I smbj.pdf
SMBJ64AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ64AHE3_B/H smbj.pdf
SMBJ64AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ64AHM3_B/H smbj.pdf
SMBJ64AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8P22-M3/H v8p22.pdf
V8P22-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.9A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V8P22-M3/H v8p22.pdf
V8P22-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.9A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 811 Stücke:
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12+1.84 EUR
18+1.17 EUR
100+0.86 EUR
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V8P22HM3/H v8p22.pdf
V8P22HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.9A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V8P22HM3/H v8p22.pdf
V8P22HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.9A TO277A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
15+1.44 EUR
Mindestbestellmenge: 10 Stücke
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