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SS26S-M3/5AT SS26S-M3/5AT VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.75V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS26S-M3/61T SS26S-M3/61T VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS26SHE3_B/H SS26SHE3_B/H VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS26SHE3_B/I SS26SHE3_B/I VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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MRS16000C8209FCT00 MRS16000C8209FCT00 VISHAY mrs16m25.pdf Category: THT Resistors
Description: Resistor: thin film; 82Ω; THT; 400mW; ±1%; 200V; Ø0.5x29mm; 50ppm/°C
Mounting: THT
Operating temperature: -55...155°C
Resistance: 82Ω
Length: 3.6mm
Body dimensions: Ø1.6x3.6mm
Power: 0.4W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Operating voltage: 200V
Tolerance: ±1%
Diameter: 1.6mm
Type of resistor: thin film
auf Bestellung 3760 Stücke:
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610+0.14 EUR
751+0.11 EUR
828+0.1 EUR
966+0.088 EUR
1112+0.076 EUR
1270+0.067 EUR
2500+0.06 EUR
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MRS25000C8209FCT00 MRS25000C8209FCT00 VISHAY MRS25.pdf Category: THT Resistors
Description: Resistor: thin film; 82Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Type of resistor: thin film
Resistance: 82Ω
Mounting: THT
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Length: 6.5mm
Diameter: 2.5mm
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MCT06030C1002FP500 MCT06030C1002FP500 VISHAY mcx0x0xpre.pdf Category: SMD resistors
Description: Resistor: thin film; 10kΩ; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Manufacturer series: MCT0603
Version: 0
auf Bestellung 16601 Stücke:
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592+0.14 EUR
1678+0.051 EUR
2273+0.037 EUR
2763+0.031 EUR
2995+0.029 EUR
5000+0.024 EUR
10000+0.023 EUR
15000+0.021 EUR
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SIHG050N60E-GE3 VISHAY sihg050n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP050N60E-GE3 SIHP050N60E-GE3 VISHAY sihp050n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MAL213639101E3 MAL213639101E3 VISHAY 136RVI.PDF Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Tolerance: ±20%
Diameter: 12.5mm
Terminal pitch: 5mm
Mounting: THT
Manufacturer series: MAL2136
Service life: 7000h
Operating temperature: -55...105°C
Body dimensions: Ø12.5x20mm
Type of capacitor: electrolytic
Capacitance: 100µF
Height: 20mm
Operating voltage: 100V DC
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26+3.36 EUR
38+2.26 EUR
50+1.89 EUR
100+1.71 EUR
200+1.57 EUR
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IRF530STRLPBF IRF530STRLPBF VISHAY sihf530s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhancement
Kind of package: reel; tape
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IRF740ALPBF IRF740ALPBF VISHAY tf-irf740alpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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24+3.65 EUR
38+2.26 EUR
50+1.83 EUR
100+1.74 EUR
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IRF740ASTRLPBF IRF740ASTRLPBF VISHAY sihf740a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF740PBF-BE3 IRF740PBF-BE3 VISHAY 91054.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.86 EUR
42+2.05 EUR
47+1.82 EUR
51+1.69 EUR
100+1.51 EUR
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IRF740STRRPBF IRF740STRRPBF VISHAY sihf740s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ44RPBF IRFZ44RPBF VISHAY irfz44r.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ44SPBF IRFZ44SPBF VISHAY sihfz44s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ44STRLPBF IRFZ44STRLPBF VISHAY sihfz44s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ24PBF IRFZ24PBF VISHAY irfz24.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Mounting: THT
Pulsed drain current: 68A
Power dissipation: 60W
Gate charge: 25nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.1Ω
auf Bestellung 446 Stücke:
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33+2.62 EUR
73+1.17 EUR
83+1.04 EUR
100+0.98 EUR
250+0.9 EUR
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IRFZ40PBF IRFZ40PBF VISHAY irfz40.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ48PBF IRFZ48PBF VISHAY irfz48.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
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IRFZ48RSPBF IRFZ48RSPBF VISHAY sihfz48rs.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
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IRFZ48SPBF IRFZ48SPBF VISHAY sihfz48s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
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IRFZ48STRLPBF IRFZ48STRLPBF VISHAY sihfz48s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
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BFC238330104 VISHAY mmkp383.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Terminal pitch: 22.5mm
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 26x19.5x10mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
Produkt ist nicht verfügbar
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BFC238330153 BFC238330153 VISHAY mmkp383.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Mounting: THT
Lead length: 3.5mm
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Terminal pitch: 15mm
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Capacitance: 15nF
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5+17.02 EUR
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IRL540SPBF IRL540SPBF VISHAY sihl540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IRL540STRLPBF VISHAY sihl540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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TS53YJ103MR10 TS53YJ103MR10 VISHAY ts53yj.pdf Category: Single turn SMD trimmers
Description: Potentiometer: mounting; 10kΩ; single turn; 250mW; SMD; ±20%; 200V
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: single turn
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Leads: YJ
Operating temperature: -55...155°C
Operating voltage: 200V
auf Bestellung 433 Stücke:
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28+3.06 EUR
33+2.64 EUR
35+2.43 EUR
50+2.26 EUR
100+2.09 EUR
250+1.89 EUR
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1.5KE82CA-E3/54 1.5KE82CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 364 Stücke:
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162+0.52 EUR
182+0.46 EUR
208+0.4 EUR
250+0.37 EUR
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GRC00DD1021CTNL GRC00DD1021CTNL VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x16mm
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IRFP21N60LPBF VISHAY doc?98237 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Gate charge: 150nC
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IRF540STRLPBF IRF540STRLPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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IRF540STRRPBF IRF540STRRPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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GSC00AF2211VARL GSC00AF2211VARL VISHAY GSC.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Height: 10mm
Nominal life: 2000h
Dimensions: 8x10mm
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.95 EUR
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BZX55C3V0-TAP BZX55C3V0-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 13480 Stücke:
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715+0.12 EUR
1021+0.083 EUR
1220+0.07 EUR
1819+0.046 EUR
2539+0.033 EUR
5000+0.031 EUR
10000+0.03 EUR
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IRF510STRRPBF IRF510STRRPBF VISHAY sihf510s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF830ALPBF IRF830ALPBF VISHAY sihf830a.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.65 EUR
31+2.8 EUR
35+2.43 EUR
50+1.81 EUR
100+1.67 EUR
250+1.5 EUR
500+1.42 EUR
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IRF830ASPBF IRF830ASPBF VISHAY sihf830a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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IRF830ASTRLPBF IRF830ASTRLPBF VISHAY sihf830a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRF830BPBF IRF830BPBF VISHAY irf830b.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840ASTRRPBF IRF840ASTRRPBF VISHAY sihf840.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRF840LCLPBF VISHAY sihf840l.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCSPBF IRF840LCSPBF VISHAY sihf840l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840STRRPBF IRF840STRRPBF VISHAY sihf840s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRF9530STRLPBF IRF9530STRLPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRF9530STRRPBF IRF9530STRRPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRFB13N50APBF IRFB13N50APBF VISHAY tf-irfb13n50apbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF640PBF-BE3 IRF640PBF-BE3 VISHAY sihf640.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF640STRRPBF IRF640STRRPBF VISHAY sihf640s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI7852DP-T1-E3 SI7852DP-T1-E3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Technology: TrenchFET®
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 16.5mΩ
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 41nC
Polarisation: unipolar
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PE30L0FL472KAB PE30L0FL472KAB VISHAY pe30.pdf Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 4.7kΩ; single turn; 3W; ±10%; 6mm; linear
Type of potentiometer: shaft
Resistance: 4.7kΩ
Kind of potentiometer: single turn
Power: 3W
Mounting: on panel
Tolerance: ±10%
Track material: cermet
Electrical rotation angle: 270 ±10°
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Leads: for soldering
Mechanical rotation angle: 300 ±5°
Characteristics: linear
Shaft length: 25mm
Min. insulation resistance: 1TΩ
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use; for military use
Operating voltage: 300V
Shaft surface: smooth
IP rating: IP67
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
2+48.44 EUR
5+41.79 EUR
10+39.78 EUR
20+38.34 EUR
30+37.47 EUR
50+36.89 EUR
80+36.45 EUR
Mindestbestellmenge: 2 Stücke
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SI2301CDS-T1-E3 SI2301CDS-T1-E3 VISHAY si2301cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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MRS25000C2324FCT00 MRS25000C2324FCT00 VISHAY MRS25.pdf Category: THT Resistors
Description: Resistor: thin film; 2.32MΩ; THT; 600mW; ±1%; 350V; Ø0.6x28mm
Tolerance: ±1%
Diameter: 2.5mm
Type of resistor: thin film
Mounting: THT
Resistance: 2.32MΩ
Length: 6.5mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Operating voltage: 350V
auf Bestellung 8840 Stücke:
Lieferzeit 14-21 Tag (e)
240+0.36 EUR
570+0.15 EUR
1000+0.093 EUR
5000+0.068 EUR
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IRF9540STRRPBF IRF9540STRRPBF VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR9024TRLPBF IRFR9024TRLPBF VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IRF9640LPBF VISHAY IRF%28SiHF%299640%28S%2CL%29.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CNY17-3X009T CNY17-3X009T VISHAY cny17.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
CTR@If: 40-80%@10mA
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.99 EUR
124+0.69 EUR
141+0.61 EUR
156+0.55 EUR
171+0.5 EUR
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BFC233620473 BFC233620473 VISHAY mkp3362x2.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Tolerance: ±20%
Terminal pitch: 15mm
Mounting: THT
Kind of capacitor: X2
Climate class: 55/105/56
Leads: 2pin
Body dimensions: 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Lead length: 3.5mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 150 Stücke:
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120+0.71 EUR
150+0.56 EUR
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TDCG1060M TDCG1060M VISHAY TDCG1050M.pdf Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Type of display: LED
Digit height: 10mm; 0.39"
Colour: green
Wavelength: 562...575nm
Operating current: 20mA
Kind of display: 7-segment
Luminosity: 2.8...4mcd
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Common electrode: cathode
auf Bestellung 76 Stücke:
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23+3.87 EUR
30+2.88 EUR
48+2.37 EUR
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SS26S-M3/5AT ss26s.pdf
SS26S-M3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.75V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS26S-M3/61T ss26s.pdf
SS26S-M3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS26SHE3_B/H ss26s.pdf
SS26SHE3_B/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS26SHE3_B/I ss26s.pdf
SS26SHE3_B/I
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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MRS16000C8209FCT00 mrs16m25.pdf
MRS16000C8209FCT00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; 82Ω; THT; 400mW; ±1%; 200V; Ø0.5x29mm; 50ppm/°C
Mounting: THT
Operating temperature: -55...155°C
Resistance: 82Ω
Length: 3.6mm
Body dimensions: Ø1.6x3.6mm
Power: 0.4W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Operating voltage: 200V
Tolerance: ±1%
Diameter: 1.6mm
Type of resistor: thin film
auf Bestellung 3760 Stücke:
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610+0.14 EUR
751+0.11 EUR
828+0.1 EUR
966+0.088 EUR
1112+0.076 EUR
1270+0.067 EUR
2500+0.06 EUR
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MRS25000C8209FCT00 MRS25.pdf
MRS25000C8209FCT00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; 82Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Type of resistor: thin film
Resistance: 82Ω
Mounting: THT
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Length: 6.5mm
Diameter: 2.5mm
auf Bestellung 71 Stücke:
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71+1.19 EUR
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MCT06030C1002FP500 mcx0x0xpre.pdf
MCT06030C1002FP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 10kΩ; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Manufacturer series: MCT0603
Version: 0
auf Bestellung 16601 Stücke:
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AnzahlPrivatkunde
592+0.14 EUR
1678+0.051 EUR
2273+0.037 EUR
2763+0.031 EUR
2995+0.029 EUR
5000+0.024 EUR
10000+0.023 EUR
15000+0.021 EUR
Mindestbestellmenge: 592 Stücke
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SIHG050N60E-GE3 sihg050n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP050N60E-GE3 sihp050n60e.pdf
SIHP050N60E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MAL213639101E3 136RVI.PDF
MAL213639101E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Tolerance: ±20%
Diameter: 12.5mm
Terminal pitch: 5mm
Mounting: THT
Manufacturer series: MAL2136
Service life: 7000h
Operating temperature: -55...105°C
Body dimensions: Ø12.5x20mm
Type of capacitor: electrolytic
Capacitance: 100µF
Height: 20mm
Operating voltage: 100V DC
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.36 EUR
38+2.26 EUR
50+1.89 EUR
100+1.71 EUR
200+1.57 EUR
Mindestbestellmenge: 26 Stücke
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IRF530STRLPBF sihf530s.pdf
IRF530STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740ALPBF tf-irf740alpbf.pdf
IRF740ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 957 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.65 EUR
38+2.26 EUR
50+1.83 EUR
100+1.74 EUR
Mindestbestellmenge: 24 Stücke
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IRF740ASTRLPBF sihf740a.pdf
IRF740ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF-BE3 91054.pdf
IRF740PBF-BE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
30+2.86 EUR
42+2.05 EUR
47+1.82 EUR
51+1.69 EUR
100+1.51 EUR
Mindestbestellmenge: 30 Stücke
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IRF740STRRPBF sihf740s.pdf
IRF740STRRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRFZ44RPBF irfz44r.pdf
IRFZ44RPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44SPBF sihfz44s.pdf
IRFZ44SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44STRLPBF sihfz44s.pdf
IRFZ44STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRFZ24PBF description irfz24.pdf
IRFZ24PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Mounting: THT
Pulsed drain current: 68A
Power dissipation: 60W
Gate charge: 25nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.1Ω
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
33+2.62 EUR
73+1.17 EUR
83+1.04 EUR
100+0.98 EUR
250+0.9 EUR
Mindestbestellmenge: 33 Stücke
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IRFZ40PBF irfz40.pdf
IRFZ40PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48PBF irfz48.pdf
IRFZ48PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48RSPBF sihfz48rs.pdf
IRFZ48RSPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48SPBF sihfz48s.pdf
IRFZ48SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48STRLPBF sihfz48s.pdf
IRFZ48STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BFC238330104 mmkp383.pdf
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Terminal pitch: 22.5mm
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 26x19.5x10mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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BFC238330153 mmkp383.pdf
BFC238330153
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Mounting: THT
Lead length: 3.5mm
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Terminal pitch: 15mm
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Capacitance: 15nF
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.02 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL540SPBF sihl540s.pdf
IRL540SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL540STRLPBF sihl540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TS53YJ103MR10 ts53yj.pdf
TS53YJ103MR10
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; 10kΩ; single turn; 250mW; SMD; ±20%; 200V
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: single turn
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Leads: YJ
Operating temperature: -55...155°C
Operating voltage: 200V
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.06 EUR
33+2.64 EUR
35+2.43 EUR
50+2.26 EUR
100+2.09 EUR
250+1.89 EUR
Mindestbestellmenge: 28 Stücke
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1.5KE82CA-E3/54 15ke_Ser.pdf
1.5KE82CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
182+0.46 EUR
208+0.4 EUR
250+0.37 EUR
Mindestbestellmenge: 162 Stücke
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GRC00DD1021CTNL GRC.pdf
GRC00DD1021CTNL
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x16mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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IRFP21N60LPBF doc?98237
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Gate charge: 150nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540STRLPBF sihf540s.pdf
IRF540STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF540STRRPBF sihf540s.pdf
IRF540STRRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GSC00AF2211VARL GSC.pdf
GSC00AF2211VARL
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Height: 10mm
Nominal life: 2000h
Dimensions: 8x10mm
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
90+0.95 EUR
Mindestbestellmenge: 90 Stücke
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BZX55C3V0-TAP BZX55C10-TAP.pdf
BZX55C3V0-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 13480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
715+0.12 EUR
1021+0.083 EUR
1220+0.07 EUR
1819+0.046 EUR
2539+0.033 EUR
5000+0.031 EUR
10000+0.03 EUR
Mindestbestellmenge: 715 Stücke
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IRF510STRRPBF sihf510s.pdf
IRF510STRRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ALPBF sihf830a.pdf
IRF830ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.65 EUR
31+2.8 EUR
35+2.43 EUR
50+1.81 EUR
100+1.67 EUR
250+1.5 EUR
500+1.42 EUR
Mindestbestellmenge: 24 Stücke
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IRF830ASPBF sihf830a.pdf
IRF830ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ASTRLPBF sihf830a.pdf
IRF830ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF830BPBF irf830b.pdf
IRF830BPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840ASTRRPBF sihf840.pdf
IRF840ASTRRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF840LCLPBF description sihf840l.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCSPBF sihf840l.pdf
IRF840LCSPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840STRRPBF sihf840s.pdf
IRF840STRRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF9530STRLPBF sihf9530.pdf
IRF9530STRLPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF9530STRRPBF sihf9530.pdf
IRF9530STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRFB13N50APBF tf-irfb13n50apbf.pdf
IRFB13N50APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF640PBF-BE3 sihf640.pdf
IRF640PBF-BE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF640STRRPBF sihf640s.pdf
IRF640STRRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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SI7852DP-T1-E3 si7852dp.pdf
SI7852DP-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Technology: TrenchFET®
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 16.5mΩ
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 41nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE30L0FL472KAB pe30.pdf
PE30L0FL472KAB
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 4.7kΩ; single turn; 3W; ±10%; 6mm; linear
Type of potentiometer: shaft
Resistance: 4.7kΩ
Kind of potentiometer: single turn
Power: 3W
Mounting: on panel
Tolerance: ±10%
Track material: cermet
Electrical rotation angle: 270 ±10°
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Leads: for soldering
Mechanical rotation angle: 300 ±5°
Characteristics: linear
Shaft length: 25mm
Min. insulation resistance: 1TΩ
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use; for military use
Operating voltage: 300V
Shaft surface: smooth
IP rating: IP67
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+48.44 EUR
5+41.79 EUR
10+39.78 EUR
20+38.34 EUR
30+37.47 EUR
50+36.89 EUR
80+36.45 EUR
Mindestbestellmenge: 2 Stücke
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SI2301CDS-T1-E3 si2301cd.pdf
SI2301CDS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MRS25000C2324FCT00 MRS25.pdf
MRS25000C2324FCT00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; 2.32MΩ; THT; 600mW; ±1%; 350V; Ø0.6x28mm
Tolerance: ±1%
Diameter: 2.5mm
Type of resistor: thin film
Mounting: THT
Resistance: 2.32MΩ
Length: 6.5mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Operating voltage: 350V
auf Bestellung 8840 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
240+0.36 EUR
570+0.15 EUR
1000+0.093 EUR
5000+0.068 EUR
Mindestbestellmenge: 240 Stücke
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IRF9540STRRPBF
IRF9540STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRFR9024TRLPBF sihfr902.pdf
IRFR9024TRLPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRF9640LPBF IRF%28SiHF%299640%28S%2CL%29.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CNY17-3X009T cny17.pdf
CNY17-3X009T
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
CTR@If: 40-80%@10mA
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
87+0.99 EUR
124+0.69 EUR
141+0.61 EUR
156+0.55 EUR
171+0.5 EUR
Mindestbestellmenge: 87 Stücke
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BFC233620473 mkp3362x2.pdf
BFC233620473
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Tolerance: ±20%
Terminal pitch: 15mm
Mounting: THT
Kind of capacitor: X2
Climate class: 55/105/56
Leads: 2pin
Body dimensions: 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Lead length: 3.5mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
150+0.56 EUR
Mindestbestellmenge: 120 Stücke
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TDCG1060M TDCG1050M.pdf
TDCG1060M
Hersteller: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Type of display: LED
Digit height: 10mm; 0.39"
Colour: green
Wavelength: 562...575nm
Operating current: 20mA
Kind of display: 7-segment
Luminosity: 2.8...4mcd
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Common electrode: cathode
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.87 EUR
30+2.88 EUR
48+2.37 EUR
Mindestbestellmenge: 23 Stücke
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