| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI3459BDV-T1-GE3 | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.9A Pulsed drain current: -8A Power dissipation: 3.3W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 288mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3437DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 790mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3457CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Pulsed drain current: -20A Power dissipation: 3W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 113mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3443DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3437DV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 790mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3483DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -30A Power dissipation: 3W Case: SC74; TSOP6 On-state resistance: 51.3mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3477DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -40A Power dissipation: 4.2W Case: SC74; TSOP6 Gate-source voltage: ±10V On-state resistance: 33mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3493BDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -25A Power dissipation: 2.97W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 43.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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Si3493DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -32A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 51.1mΩ Mounting: SMD Gate charge: 52.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3424CDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3440ADV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.2A Pulsed drain current: 4A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 432mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3417DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -50A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3443CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3443CDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3440DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 1.14W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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Si3410DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 30A Power dissipation: 4.1W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3424CDV-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3429EDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -40A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 38mΩ Mounting: SMD Gate charge: 43.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3473CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -20A Power dissipation: 4.2W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 36mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI3473DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -30A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 38.8mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CRCW12103K30FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 3.3kΩ Mounting: SMD Case - inch: 1210 Case - mm: 3225 Power: 0.5W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 3.2x2.5x0.55mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CRCW12103K30FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 3.3kΩ Mounting: SMD Case - inch: 1210 Case - mm: 3225 Power: 0.5W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Quantity in set/package: 5000pcs. Body dimensions: 3.2x2.5x0.55mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CRCW08051K91FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V Type of resistor: thick film Resistance: 1.91kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| VS-EPH6007L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 520A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2.2V Reverse recovery time: 65ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| VS-C4PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.24kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 55ns Max. load current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| VS-A5PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Max. load current: 120A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| VS-A5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Application: automotive industry Max. load current: 120A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| VS-C4PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.24kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 55ns Application: automotive industry Max. load current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| VS-C5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 330A Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.6V Reverse recovery time: 46ns Application: automotive industry Max. load current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| VS-E4PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 425A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 68ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| VS-E4PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 425A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 68ns Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| VS-E5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD Max. forward voltage: 1.7V Reverse recovery time: 29ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MBE04140C6800FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C Length: 11.9mm Tolerance: ±1% Diameter: 4.2mm Type of resistor: metal film Mounting: THT Operating temperature: -55...155°C Resistance: 680Ω Leads: axial Body dimensions: Ø4.2x11.9mm Power: 1W Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.8x31mm Operating voltage: 500V |
auf Bestellung 657 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9620STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 1.5Ω Pulsed drain current: -14A Power dissipation: 40W Polarisation: unipolar Drain current: -2A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VS-26MT40 | VISHAY |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 400V; If: 25A; Ifsm: 360A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.4kV Load current: 25A Max. forward impulse current: 360A Electrical mounting: THT Version: square Max. forward voltage: 1.26V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: D-63 Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| VS-200MT40KPBF | VISHAY |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 400V; If: 200A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 0.4kV Load current: 200A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.4V Leads: M5 screws Case: MTK Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIZF928DT-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 150÷400A Case: PowerPAIR® 6x5 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: -12...16V Semiconductor structure: asymmetric Pulsed drain current: 150...400A Polarisation: unipolar Technology: TrenchFET® Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SIHP11N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHA11N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIHA11N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIHB11N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIHB11N80AE-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 391mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 22A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIHB11N80E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
SIHD11N80AE-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 391mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIHG11N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIHG11N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
SIHP11N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIHB15N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 29A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 29A Gate charge: 53nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIHA15N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 29A Gate charge: 53nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
SIHA15N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 54nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIHG15N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 53nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIHG15N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 54nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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|
SIHP15N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 304mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 35nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
SIHP15N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 54nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
CRCW120649K9FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 49.9kΩ; SMD; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 49.9kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 3.2x1.6x0.55mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
VS-MBRB1535CT-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 35V Load current: 15A Semiconductor structure: common cathode; double Max. forward voltage: 0.57V Kind of package: tube Manufacturer standard package: 50pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
VS-MBRB1535CTL-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 35V Load current: 15A Semiconductor structure: common cathode; double Max. forward voltage: 0.57V Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
VS-MBRB1535CTR-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 35V Load current: 15A Semiconductor structure: common cathode; double Max. forward voltage: 0.57V Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
RCC04020000Z0ED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0Ω; SMD; 0402; 125mW; RCC; 1x0.5x0.35mm Type of resistor: thick film Resistance: 0Ω Mounting: SMD Case - inch: 0402 Case - mm: 1005 Power: 0.125W Manufacturer series: RCC Max. operating voltage: 75V Body dimensions: 1x0.5x0.35mm Operating temperature: -55...155°C Temperature coefficient: 0ppm/°C Conform to the norm: AEC-Q200 |
auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL214097012E3 | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 330uF; 35VDC; ±20%; 3000h; 120mΩ Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...125°C Service life: 3000h Impedance: 0.12Ω Conform to the norm: AEC-Q200 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI3459BDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.57 EUR |
| 121+ | 0.7 EUR |
| 141+ | 0.61 EUR |
| 148+ | 0.58 EUR |
| SI3437DV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI3457CDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SI3443DDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI3437DV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SI3483DDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3W
Case: SC74; TSOP6
On-state resistance: 51.3mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3W
Case: SC74; TSOP6
On-state resistance: 51.3mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SI3477DV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±10V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±10V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SI3493BDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 2.97W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 43.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 2.97W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 43.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| Si3493DDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 51.1mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 51.1mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI3424CDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SI3440ADV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SI3417DV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3443CDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI3443CDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3440DV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| Si3410DV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI3424CDV-T1-BE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI3429EDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI3473CDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI3473DDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| CRCW12103K30FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
Produkt ist nicht verfügbar
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| CRCW12103K30FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| CRCW08051K91FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V
Type of resistor: thick film
Resistance: 1.91kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V
Type of resistor: thick film
Resistance: 1.91kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| VS-EPH6007L-N3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
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| VS-C4PH6006L-N3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
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| VS-A5PH6006L-N3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
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| VS-A5PH6006LHN3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
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Stück im Wert von UAH
| VS-C4PH6006LHN3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Application: automotive industry
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Application: automotive industry
Max. load current: 60A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-C5PH6006LHN3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.6V
Reverse recovery time: 46ns
Application: automotive industry
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.6V
Reverse recovery time: 46ns
Application: automotive industry
Max. load current: 60A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-E4PH6006L-N3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-E4PH6006LHN3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Application: automotive industry
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| VS-E5PH6006LHN3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD
Max. forward voltage: 1.7V
Reverse recovery time: 29ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD
Max. forward voltage: 1.7V
Reverse recovery time: 29ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| MBE04140C6800FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C
Length: 11.9mm
Tolerance: ±1%
Diameter: 4.2mm
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 680Ω
Leads: axial
Body dimensions: Ø4.2x11.9mm
Power: 1W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.8x31mm
Operating voltage: 500V
Category: THT Resistors
Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C
Length: 11.9mm
Tolerance: ±1%
Diameter: 4.2mm
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 680Ω
Leads: axial
Body dimensions: Ø4.2x11.9mm
Power: 1W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.8x31mm
Operating voltage: 500V
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 144+ | 0.6 EUR |
| 190+ | 0.45 EUR |
| 226+ | 0.38 EUR |
| 260+ | 0.33 EUR |
| 296+ | 0.29 EUR |
| 350+ | 0.24 EUR |
| 500+ | 0.21 EUR |
| IRF9620STRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Pulsed drain current: -14A
Power dissipation: 40W
Polarisation: unipolar
Drain current: -2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Pulsed drain current: -14A
Power dissipation: 40W
Polarisation: unipolar
Drain current: -2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| VS-26MT40 |
|
Hersteller: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 25A; Ifsm: 360A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 360A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.26V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 25A; Ifsm: 360A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 360A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.26V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-200MT40KPBF |
|
Hersteller: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 200A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 200A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.4V
Leads: M5 screws
Case: MTK
Kind of package: bulk
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 200A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 200A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.4V
Leads: M5 screws
Case: MTK
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SIZF928DT-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 150÷400A
Case: PowerPAIR® 6x5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: -12...16V
Semiconductor structure: asymmetric
Pulsed drain current: 150...400A
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 150÷400A
Case: PowerPAIR® 6x5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: -12...16V
Semiconductor structure: asymmetric
Pulsed drain current: 150...400A
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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Stück im Wert von UAH
| SIHP11N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.36 EUR |
| 40+ | 2.18 EUR |
| 50+ | 1.89 EUR |
| SIHA11N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHA11N80E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB11N80AE-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB11N80AE-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| SIHB11N80E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHD11N80AE-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| SIHG11N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG11N80E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP11N80E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB15N80AE-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 29A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 29A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| SIHA15N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHA15N80AEF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG15N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 53nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG15N80AEF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP15N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 304mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 304mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIHP15N80AEF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CRCW120649K9FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 49.9kΩ; SMD; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 49.9kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x1.6x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 49.9kΩ; SMD; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 49.9kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x1.6x0.55mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VS-MBRB1535CT-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: tube
Manufacturer standard package: 50pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-MBRB1535CTL-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-MBRB1535CTR-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RCC04020000Z0ED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 0402; 125mW; RCC; 1x0.5x0.35mm
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Power: 0.125W
Manufacturer series: RCC
Max. operating voltage: 75V
Body dimensions: 1x0.5x0.35mm
Operating temperature: -55...155°C
Temperature coefficient: 0ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 0402; 125mW; RCC; 1x0.5x0.35mm
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Power: 0.125W
Manufacturer series: RCC
Max. operating voltage: 75V
Body dimensions: 1x0.5x0.35mm
Operating temperature: -55...155°C
Temperature coefficient: 0ppm/°C
Conform to the norm: AEC-Q200
auf Bestellung 80000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20000+ | 0.011 EUR |
| MAL214097012E3 |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 35VDC; ±20%; 3000h; 120mΩ
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Service life: 3000h
Impedance: 0.12Ω
Conform to the norm: AEC-Q200
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 35VDC; ±20%; 3000h; 120mΩ
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Service life: 3000h
Impedance: 0.12Ω
Conform to the norm: AEC-Q200
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.62 EUR |