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VS-ETU1506STRLHM3 VS-ETU1506STRLHM3 VISHAY vs-etu1506shm3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 40ns; D2PAK,TO263AB; Ufmax: 1.9V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 1.9V
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Load current: 15A
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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VS-ETU1506STRR-M3 VS-ETU1506STRR-M3 VISHAY vs-etu1506sm3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 210ns; D2PAK,TO263AB; Ufmax: 1.1V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 1.1V
Features of semiconductor devices: ultrafast switching
Load current: 15A
Reverse recovery time: 210ns
Produkt ist nicht verfügbar
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VS-ETU1506STRRHM3 VS-ETU1506STRRHM3 VISHAY vs-etu1506shm3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 40ns; D2PAK,TO263AB; Ufmax: 1.9V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 1.9V
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Load current: 15A
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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VS-ETX1506S-M3 VS-ETX1506S-M3 VISHAY vs-etx1506s-m3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 20ns; D2PAK,TO263AB; Ufmax: 3.4V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward voltage: 3.4V
Features of semiconductor devices: ultrafast switching
Load current: 15A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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VS-ETX1506STRL-M3 VS-ETX1506STRL-M3 VISHAY vs-etx1506s-m3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 20ns; D2PAK,TO263AB; Ufmax: 3.4V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 3.4V
Features of semiconductor devices: ultrafast switching
Load current: 15A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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VS-ETX1506STRR-M3 VS-ETX1506STRR-M3 VISHAY vs-etx1506s-m3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 20ns; D2PAK,TO263AB; Ufmax: 3.4V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 3.4V
Features of semiconductor devices: ultrafast switching
Load current: 15A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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SI4143DY-T1-GE3 SI4143DY-T1-GE3 VISHAY si4143dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -25.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25.3A
Pulsed drain current: -70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SIRA50DP-T1-RE3 SIRA50DP-T1-RE3 VISHAY sira50dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Power dissipation: 64W
Gate charge: 194nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 1.45mΩ
Mounting: SMD
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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SIRA50ADP-T1-RE3 SIRA50ADP-T1-RE3 VISHAY sira50adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 175A; Idm: 400A
Power dissipation: 64W
Gate charge: 150nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 175A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 1.6mΩ
Mounting: SMD
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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VO3063-X007T VO3063-X007T VISHAY VO3063-X007T.pdf Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; zero voltage crossing driver; Ch: 1
Output voltage: 600V
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Trigger current: 60mA
Manufacturer series: VO3063
Slew rate: 1.5kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.59 EUR
73+1.18 EUR
81+1.05 EUR
100+0.87 EUR
Mindestbestellmenge: 54 Stücke
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SMAJ51CA-E3/5A SMAJ51CA-E3/5A VISHAY smaj50a.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷62.7V; 4.9A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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VS-ETU1506STRLHM3 vs-etu1506shm3.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 40ns; D2PAK,TO263AB; Ufmax: 1.9V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 1.9V
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Load current: 15A
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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VS-ETU1506STRR-M3 vs-etu1506sm3.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 210ns; D2PAK,TO263AB; Ufmax: 1.1V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 1.1V
Features of semiconductor devices: ultrafast switching
Load current: 15A
Reverse recovery time: 210ns
Produkt ist nicht verfügbar
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VS-ETU1506STRRHM3 vs-etu1506shm3.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 40ns; D2PAK,TO263AB; Ufmax: 1.9V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 1.9V
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Load current: 15A
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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VS-ETX1506S-M3 vs-etx1506s-m3.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 20ns; D2PAK,TO263AB; Ufmax: 3.4V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward voltage: 3.4V
Features of semiconductor devices: ultrafast switching
Load current: 15A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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VS-ETX1506STRL-M3 vs-etx1506s-m3.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 20ns; D2PAK,TO263AB; Ufmax: 3.4V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 3.4V
Features of semiconductor devices: ultrafast switching
Load current: 15A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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VS-ETX1506STRR-M3 vs-etx1506s-m3.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 20ns; D2PAK,TO263AB; Ufmax: 3.4V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Mounting: SMD
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Max. forward voltage: 3.4V
Features of semiconductor devices: ultrafast switching
Load current: 15A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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SI4143DY-T1-GE3 si4143dy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -25.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25.3A
Pulsed drain current: -70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SIRA50DP-T1-RE3 sira50dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Power dissipation: 64W
Gate charge: 194nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 1.45mΩ
Mounting: SMD
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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SIRA50ADP-T1-RE3 sira50adp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 175A; Idm: 400A
Power dissipation: 64W
Gate charge: 150nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 175A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 1.6mΩ
Mounting: SMD
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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VO3063-X007T VO3063-X007T.pdf
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; zero voltage crossing driver; Ch: 1
Output voltage: 600V
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Trigger current: 60mA
Manufacturer series: VO3063
Slew rate: 1.5kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
54+1.59 EUR
73+1.18 EUR
81+1.05 EUR
100+0.87 EUR
Mindestbestellmenge: 54 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ51CA-E3/5A smaj50a.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷62.7V; 4.9A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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