| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SIR104DP-T1-RE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR120DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 106A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR170DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.85mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SiR668DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR670DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 200A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR516DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63.7A Pulsed drain current: 200A Power dissipation: 71.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR570DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 77.4A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR578DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 70.2A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIDR170DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 5.85mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIDR626DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIDR668DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIJA52ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 131A Pulsed drain current: 200A Power dissipation: 48W On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR104ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR104LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR826LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 86A Pulsed drain current: 200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR846ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR870BDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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CRCW0805909KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 909kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 909kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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CRCW0805931KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 931kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 931kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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| SIHU2N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: IPAK; TO251 Mounting: THT Kind of package: tube On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A |
Produkt ist nicht verfügbar |
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| SS10PH45-M3/86A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 400pF Max. forward voltage: 0.72V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 200A |
Produkt ist nicht verfügbar |
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| SS10PH45HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 400pF Max. forward voltage: 0.72V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 200A |
Produkt ist nicht verfügbar |
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BFC233860272 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 2.7nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC Mounting: THT Terminal pitch: 7.5mm Tolerance: ±20% Type of capacitor: polypropylene Capacitance: 2.7nF Operating voltage: 300V AC; 1kV DC Body dimensions: 10x4x9mm |
auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4459ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -23.5A; 5W; SO8 Type of transistor: P-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 61nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -23.5A On-state resistance: 5mΩ |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4483ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -15.4A Power dissipation: 3.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 44.8nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2087 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7101DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI7617DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13.9A Pulsed drain current: -60A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 12.3mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0402Y683KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 68nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 68nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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| ILQ2-X007 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; SMD16; ILQX Type of optocoupler: optocoupler Mounting: SMD Number of channels: 4 Kind of output: transistor Insulation voltage: 4.42kV CTR@If: 100-500%@10mA Case: SMD16 Conform to the norm: UL Turn-on time: 2µs Turn-off time: 13.5µs Max. off-state voltage: 6V Manufacturer series: ILQX |
Produkt ist nicht verfügbar |
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| ILQ2-X016 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 4.42kV; DIP16; ILQX Type of optocoupler: optocoupler Mounting: THT Number of channels: 4 Kind of output: transistor Insulation voltage: 4.42kV CTR@If: 100-500%@10mA Case: DIP16 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 13.5µs Max. off-state voltage: 6V Manufacturer series: ILQX |
Produkt ist nicht verfügbar |
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| VO2611-X006 | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8 Max. off-state voltage: 5V Case: DIP8 Mounting: THT Turn-on time: 20ns Output voltage: 7V Number of channels: 1 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Conform to the norm: UL Manufacturer series: VO2611 Type of optocoupler: optocoupler Turn-off time: 25ns |
Produkt ist nicht verfügbar |
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| VO2631-X006 | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8 Max. off-state voltage: 5V Case: DIP8 Mounting: THT Turn-on time: 20ns Output voltage: 7V Number of channels: 2 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Conform to the norm: UL Manufacturer series: VO2631 Type of optocoupler: optocoupler Turn-off time: 25ns |
Produkt ist nicht verfügbar |
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| VO615A-3X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
Produkt ist nicht verfügbar |
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| VO617A-4X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 160-320%@5mA Collector-emitter voltage: 80V Case: DIP4 Conform to the norm: UL Turn-on time: 6µs Turn-off time: 25µs Max. off-state voltage: 6V Manufacturer series: VO617A |
Produkt ist nicht verfügbar |
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GI2404-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns Case: TO220AB Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 200V Reverse recovery time: 35ns Max. forward impulse current: 125A Leakage current: 0.5mA Type of diode: rectifying Max. forward voltage: 0.895V Load current: 16A |
Produkt ist nicht verfügbar |
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CRCW2512422RFKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Operating temperature: -55...155°C Case - inch: 2512 Case - mm: 6332 Mounting: SMD Type of resistor: thick film Power: 1W Resistance: 422Ω Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
Produkt ist nicht verfügbar |
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TLMG1100-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V Type of diode: LED Mounting: SMD Case: 0603 LED colour: green Luminosity: 12.5...35mcd Dimensions: 1.6x0.8x0.6mm Viewing angle: 80° LED current: 20mA Wavelength: 564...575nm Front: flat Operating voltage: 1.8...2.4V |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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TLMG1100-GS15 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V Type of diode: LED Mounting: SMD Case: 0603 LED colour: green Luminosity: 12.5...35mcd Dimensions: 1.6x0.8x0.6mm Viewing angle: 80° LED current: 20mA Wavelength: 564...575nm Front: flat Operating voltage: 1.8...2.4V |
auf Bestellung 2755 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL211819471E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 470uF; 100VDC; Ø21x38mm; ±20%; 8000h Mounting: THT Operating temperature: -55...125°C Body dimensions: Ø21x38mm Tolerance: ±20% Capacitance: 470µF Operating voltage: 100V DC Service life: 8000h Leads: axial Type of capacitor: electrolytic |
Produkt ist nicht verfügbar |
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VS-48CTQ060-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; tube; Ir: 89mA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 20A x2 Semiconductor structure: common cathode; double Capacitance: 1.22nF Case: TO220AB Kind of package: tube Max. forward impulse current: 1kA Max. forward voltage: 0.83V Leakage current: 89mA |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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PR01000105608JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 5.6Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Mounting: THT Leads: axial Resistor features: high power and small dimension Max. operating voltage: 350V Temperature coefficient: 250ppm/°C Body dimensions: Ø2.5x8mm Tolerance: ±5% Resistance: 5.6Ω Power: 1W Type of resistor: power metal |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4948BEY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -25A Case: SO8 Drain-source voltage: -60V Drain current: -3.1A On-state resistance: 0.15Ω Type of transistor: P-MOSFET x2 Power dissipation: 2.4W Polarisation: unipolar Gate charge: 22nC Technology: TrenchFET® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SM8S26AHE3_A/I | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5.2kW; 28.9V; 157A; unidirectional; DO218AB; reel,tape Type of diode: TVS Peak pulse power dissipation: 5.2kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 157A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Application: automotive industry Technology: PAR® |
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SM8S33AHE3_A/I | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; reel,tape Type of diode: TVS Peak pulse power dissipation: 5.2kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 124A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Application: automotive industry Technology: PAR® |
auf Bestellung 1552 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHG61N65EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SiHH21N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.8A Pulsed drain current: 53A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHH21N65EF-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 53A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 53A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHW61N65EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIS862DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: 60V Drain current: 40A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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SMBZ5926B-E3/5B | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 5uA Tolerance: ±5% Mounting: SMD Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 5µA Case: SMB Zener voltage: 11V Type of diode: Zener |
Produkt ist nicht verfügbar |
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MAL210265222E3 | VISHAY |
Category: Screw terminal and others el. capacitors Description: Capacitor: electrolytic; screw type; 2.2mF; 350VDC; Ø65x105mm Operating temperature: -40...85°C Tolerance: ±20% Mounting: screw type Service life: 10000h Body dimensions: Ø65x105mm Type of capacitor: electrolytic Capacitance: 2.2mF Operating voltage: 350V DC |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12065K62FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 5.62kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 5.62kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 4100 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C2000FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 200Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 200Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB13A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11.1V Breakdown voltage: 13V Max. forward impulse current: 33A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB13A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 11.1V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SMB Type of diode: TVS Tolerance: ±5% Breakdown voltage: 13V Max. forward impulse current: 33A |
Produkt ist nicht verfügbar |
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P6SMB13A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11.1V Breakdown voltage: 13V Max. forward impulse current: 33A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB13A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 11.1V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SMB Type of diode: TVS Tolerance: ±5% Breakdown voltage: 13V Max. forward impulse current: 33A |
Produkt ist nicht verfügbar |
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P6SMB43A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
Produkt ist nicht verfügbar |
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P6SMB43A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
Produkt ist nicht verfügbar |
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P6SMB43A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
Produkt ist nicht verfügbar |
| SIR104DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR120DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR170DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SiR668DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR670DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR516DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63.7A
Pulsed drain current: 200A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63.7A
Pulsed drain current: 200A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR570DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR578DP-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIDR170DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIDR626DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIDR668DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIJA52ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 131A
Pulsed drain current: 200A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 131A
Pulsed drain current: 200A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR104ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR104LDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR826LDP-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR846ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR870BDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| CRCW0805909KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 909kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 909kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 909kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 909kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| CRCW0805931KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 931kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 931kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 931kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 931kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| SIHU2N80E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: IPAK; TO251
Mounting: THT
Kind of package: tube
On-state resistance: 2.75Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 62.5W
Polarisation: unipolar
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: IPAK; TO251
Mounting: THT
Kind of package: tube
On-state resistance: 2.75Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 62.5W
Polarisation: unipolar
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 5A
Produkt ist nicht verfügbar
| SS10PH45-M3/86A |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
| SS10PH45HM3-A/H |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
| BFC233860272 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.7nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 2.7nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 10x4x9mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.7nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 2.7nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 10x4x9mm
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 1.99 EUR |
| 55+ | 1.3 EUR |
| 73+ | 0.99 EUR |
| 77+ | 0.93 EUR |
| SI4459ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -23.5A
On-state resistance: 5mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -23.5A
On-state resistance: 5mΩ
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.87 EUR |
| 42+ | 1.72 EUR |
| 46+ | 1.56 EUR |
| SI4483ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2087 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 41+ | 1.74 EUR |
| 46+ | 1.57 EUR |
| 61+ | 1.19 EUR |
| 65+ | 1.12 EUR |
| SI7101DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7617DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13.9A
Pulsed drain current: -60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13.9A
Pulsed drain current: -60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.12 EUR |
| 80+ | 0.9 EUR |
| 103+ | 0.7 EUR |
| 109+ | 0.66 EUR |
| VJ0402Y683KXJCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| ILQ2-X007 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; SMD16; ILQX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: SMD16
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; SMD16; ILQX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: SMD16
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Produkt ist nicht verfügbar
| ILQ2-X016 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 4.42kV; DIP16; ILQX
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: DIP16
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 4.42kV; DIP16; ILQX
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: DIP16
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Produkt ist nicht verfügbar
| VO2611-X006 |
|
Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2611
Type of optocoupler: optocoupler
Turn-off time: 25ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2611
Type of optocoupler: optocoupler
Turn-off time: 25ns
Produkt ist nicht verfügbar
| VO2631-X006 |
|
Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2631
Type of optocoupler: optocoupler
Turn-off time: 25ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2631
Type of optocoupler: optocoupler
Turn-off time: 25ns
Produkt ist nicht verfügbar
| VO615A-3X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Produkt ist nicht verfügbar
| VO617A-4X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: DIP4
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: VO617A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: DIP4
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: VO617A
Produkt ist nicht verfügbar
| GI2404-E3/45 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward voltage: 0.895V
Load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward voltage: 0.895V
Load current: 16A
Produkt ist nicht verfügbar
| CRCW2512422RFKEG |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - inch: 2512
Case - mm: 6332
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 422Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - inch: 2512
Case - mm: 6332
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 422Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Produkt ist nicht verfügbar
| TLMG1100-GS08 |
|
Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 4.2 EUR |
| TLMG1100-GS15 |
|
Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
auf Bestellung 2755 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 265+ | 0.27 EUR |
| 295+ | 0.24 EUR |
| 405+ | 0.18 EUR |
| 670+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| MAL211819471E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 100VDC; Ø21x38mm; ±20%; 8000h
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: Ø21x38mm
Tolerance: ±20%
Capacitance: 470µF
Operating voltage: 100V DC
Service life: 8000h
Leads: axial
Type of capacitor: electrolytic
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 100VDC; Ø21x38mm; ±20%; 8000h
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: Ø21x38mm
Tolerance: ±20%
Capacitance: 470µF
Operating voltage: 100V DC
Service life: 8000h
Leads: axial
Type of capacitor: electrolytic
Produkt ist nicht verfügbar
| VS-48CTQ060-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; tube; Ir: 89mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Capacitance: 1.22nF
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 1kA
Max. forward voltage: 0.83V
Leakage current: 89mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; tube; Ir: 89mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Capacitance: 1.22nF
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 1kA
Max. forward voltage: 0.83V
Leakage current: 89mA
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.52 EUR |
| 23+ | 3.16 EUR |
| 32+ | 2.3 EUR |
| 33+ | 2.17 EUR |
| PR01000105608JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 5.6Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Mounting: THT
Leads: axial
Resistor features: high power and small dimension
Max. operating voltage: 350V
Temperature coefficient: 250ppm/°C
Body dimensions: Ø2.5x8mm
Tolerance: ±5%
Resistance: 5.6Ω
Power: 1W
Type of resistor: power metal
Category: THT Resistors
Description: Resistor: power metal; THT; 5.6Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Mounting: THT
Leads: axial
Resistor features: high power and small dimension
Max. operating voltage: 350V
Temperature coefficient: 250ppm/°C
Body dimensions: Ø2.5x8mm
Tolerance: ±5%
Resistance: 5.6Ω
Power: 1W
Type of resistor: power metal
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)| SI4948BEY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SM8S26AHE3_A/I |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 28.9V; 157A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 157A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 28.9V; 157A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 157A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
Produkt ist nicht verfügbar
| SM8S33AHE3_A/I |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 124A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 124A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
auf Bestellung 1552 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.13 EUR |
| 26+ | 2.83 EUR |
| 34+ | 2.16 EUR |
| 35+ | 2.04 EUR |
| SIHG61N65EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SiHH21N65E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.8A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.8A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHH21N65EF-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHW61N65EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIS862DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SMBZ5926B-E3/5B |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 5uA
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SMB
Zener voltage: 11V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 5uA
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SMB
Zener voltage: 11V
Type of diode: Zener
Produkt ist nicht verfügbar
| MAL210265222E3 |
|
Hersteller: VISHAY
Category: Screw terminal and others el. capacitors
Description: Capacitor: electrolytic; screw type; 2.2mF; 350VDC; Ø65x105mm
Operating temperature: -40...85°C
Tolerance: ±20%
Mounting: screw type
Service life: 10000h
Body dimensions: Ø65x105mm
Type of capacitor: electrolytic
Capacitance: 2.2mF
Operating voltage: 350V DC
Category: Screw terminal and others el. capacitors
Description: Capacitor: electrolytic; screw type; 2.2mF; 350VDC; Ø65x105mm
Operating temperature: -40...85°C
Tolerance: ±20%
Mounting: screw type
Service life: 10000h
Body dimensions: Ø65x105mm
Type of capacitor: electrolytic
Capacitance: 2.2mF
Operating voltage: 350V DC
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 53.35 EUR |
| CRCW12065K62FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 5.62kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 5.62kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 5.62kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 5.62kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 4100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1700+ | 0.044 EUR |
| 2800+ | 0.026 EUR |
| 4100+ | 0.017 EUR |
| MBB02070C2000FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 200Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 200Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 200Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 200Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 1680 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 910+ | 0.079 EUR |
| 1010+ | 0.071 EUR |
| P6SMB13A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB13A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
| P6SMB13A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB13A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
| P6SMB43A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Produkt ist nicht verfügbar
| P6SMB43A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Produkt ist nicht verfügbar
| P6SMB43A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Produkt ist nicht verfügbar