| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MRS25000C4702FCT00 | VISHAY |
 Category: THT ResistorsDescription: Resistor: thin film; THT; 47kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 47kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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MRS25000C4703FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 470kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 470kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 2360 Stücke: Lieferzeit 14-21 Tag (e) |
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MRS25000C4704FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 4.7MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 4.7MΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 1310 Stücke: Lieferzeit 14-21 Tag (e) |
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MRS25000C4709FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 47Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Mounting: THT Power: 0.6W Type of resistor: thin film Resistance: 47Ω Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V |
auf Bestellung 4670 Stücke: Lieferzeit 14-21 Tag (e) |
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| MRS25000C4753FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 475kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 475kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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| MRS25000C4759FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 47.5Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 47.5Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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| MRS25000C4871FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 4.87kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 4.87kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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MRS25000C4872FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 48.7kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 48.7kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 4380 Stücke: Lieferzeit 14-21 Tag (e) |
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| MRS25000C4879FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 48.7Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 48.7Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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| MRS25000C4992FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 49.9kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 49.9kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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VO0630T | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: logic; 6kV; 10Mbps; SO8; VO06xxT Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: logic Insulation voltage: 6kV Transfer rate: 10Mbps Case: SO8 Turn-on time: 23ns Turn-off time: 7ns Manufacturer series: VO06xxT |
auf Bestellung 1035 Stücke: Lieferzeit 14-21 Tag (e) |
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| VO2630-X007T | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: SMD8 Conform to the norm: UL Turn-on time: 20ns Turn-off time: 25ns Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2630 |
Produkt ist nicht verfügbar |
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| VO2630-X009T | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: SMD8 Conform to the norm: UL Turn-on time: 20ns Turn-off time: 25ns Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2630 |
Produkt ist nicht verfügbar |
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MAL213630221E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 220uF; 35VDC; Ø10x16mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 220µF Operating voltage: 35V DC Body dimensions: Ø10x16mm Terminal pitch: 5mm Tolerance: ±20% Service life: 6000h Operating temperature: -55...105°C |
auf Bestellung 791 Stücke: Lieferzeit 14-21 Tag (e) |
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TEMD1020 | VISHAY |
Category: Photodiodes Description: PIN photodiode; 1.9mm; Gull wing; SMD; 940nm; 870÷950nm; 30°; black Type of photoelement: PIN photodiode LED diameter: 1.9mm Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 870...950nm Viewing angle: 30° Active area: 0.23mm2 Front: convex LED lens: black Dimensions: 2.5x2x2.7mm Operating temperature: -40...85°C |
auf Bestellung 2886 Stücke: Lieferzeit 14-21 Tag (e) |
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TEMD5110X01 | VISHAY |
Category: Photodiodes Description: PIN photodiode; SMD; 940nm; 870÷950nm; 65°; flat; black Type of photoelement: PIN photodiode Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 870...950nm Viewing angle: 65° Active area: 7.5mm2 Front: flat LED lens: black Dimensions: 5x4.24x1.12mm |
auf Bestellung 3967 Stücke: Lieferzeit 14-21 Tag (e) |
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TEMD5510FX01 | VISHAY |
Category: IR receiver modules Description: PIN photodiode; 65°; Dim: 5x4.24x1.12mm; λp max: 540nm; 7.5mm2 Dimensions: 5x4.24x1.12mm Mounting: SMD Front: flat Viewing angle: 65° Type of photoelement: PIN photodiode Wavelength of peak sensitivity: 540nm Active area: 7.5mm2 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| TEMD6200FX01 | VISHAY |
Category: PCB Photoelectric Sensors Description: Sensor: photoelectric; PCB; Body dim: 2x1.25x0.85mm; -40÷100°C Mounting: PCB Wavelength: 540nm Body dimensions: 2x1.25x0.85mm Operating temperature: -40...100°C Type of sensor: photoelectric Response time: <150ns |
Produkt ist nicht verfügbar |
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TEMD7100X01 | VISHAY |
Category: Photodiodes Description: PIN photodiode; SMD; 950nm; 750÷1050nm; 120°; flat; black Type of photoelement: PIN photodiode Mounting: SMD Wavelength of peak sensitivity: 950nm Wavelength: 750...1050nm Viewing angle: 120° Active area: 0.23mm2 Front: flat LED lens: black Dimensions: 2x1.25x0.85mm |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFPG40PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2.7A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.7A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 761 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7370DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15.8A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.8A Pulsed drain current: 50A Power dissipation: 5.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MRS25000C3602FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 36kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 36kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 4670 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI1499DH-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A Mounting: SMD Case: SC70-6; SOT363 Kind of package: reel; tape Power dissipation: 2.78W Polarisation: unipolar Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -6.5A Drain-source voltage: -8V Drain current: -1.6A On-state resistance: 424mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| SI1499DH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A Mounting: SMD Case: SC70-6; SOT363 Kind of package: reel; tape Power dissipation: 2.78W Polarisation: unipolar Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -6.5A Drain-source voltage: -8V Drain current: -1.6A On-state resistance: 424mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| K473K15X7RF5TL2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 47nF; 50V; X7R; ±10%; THT; 2.5mm Mounting: THT Tolerance: ±10% Operating voltage: 50V Terminal pitch: 2.5mm Operating temperature: -55...125°C Type of capacitor: ceramic Dielectric: X7R Capacitance: 47nF |
Produkt ist nicht verfügbar |
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CRCW0603470RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±1%; -55÷155°C Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 470Ω Operating temperature: -55...155°C Tolerance: ±1% Max. operating voltage: 75V Power: 0.1W Type of resistor: thick film |
auf Bestellung 95100 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0603470RJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 470Ω Operating temperature: -55...155°C Tolerance: ±5% Max. operating voltage: 75V Power: 0.1W Type of resistor: thick film |
auf Bestellung 12300 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0603470RJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 470Ω Operating temperature: -55...155°C Tolerance: ±5% Max. operating voltage: 75V Power: 0.1W Type of resistor: thick film |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0201470RFNTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0201; 470Ω; 50mW; ±1%; -55÷155°C Mounting: SMD Case - inch: 0201 Case - mm: 0603 Resistance: 470Ω Operating temperature: -55...155°C Tolerance: ±1% Max. operating voltage: 30V Power: 50mW Type of resistor: thick film |
auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU220PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 538 Stücke: Lieferzeit 14-21 Tag (e) |
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| VS-70HF30 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 300V; 1.35V; 70A; cathode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 300V Max. forward voltage: 1.35V Load current: 70A Max. load current: 110A Semiconductor structure: cathode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1kA Kind of package: bulk |
Produkt ist nicht verfügbar |
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| IRF9Z10PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9Z14PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9Z14SPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9Z14STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Mounting: SMD Power dissipation: 43W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -27A Case: D2PAK; TO263 Drain-source voltage: -60V Drain current: -6.7A On-state resistance: 0.5Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| IRF9Z20PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.7A Pulsed drain current: -39A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9Z30PBF | VISHAY |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -18A Pulsed drain current: -60A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9010PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9010TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9010TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9014TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFR9014TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9014TRPBF-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9110TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.1A Pulsed drain current: -12A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9214TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9214TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DG9424EDQ-T1-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape Case: TSSOP16 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: analog switch Resistance: 3Ω Output configuration: SPST-NO Number of channels: 4 Supply voltage: 3...8V; 3...16V |
Produkt ist nicht verfügbar |
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SI1424EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70 Drain-source voltage: 20V Drain current: 4A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SC70 |
Produkt ist nicht verfügbar |
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SI1427EDH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.8W Case: SC70 Gate-source voltage: ±8V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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SI1428EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70 Mounting: SMD Drain current: 4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SC70 Drain-source voltage: 30V |
Produkt ist nicht verfügbar |
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| SIB422EDK-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W Kind of package: reel; tape On-state resistance: 82mΩ Type of transistor: N-MOSFET Power dissipation: 13W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 25A Mounting: SMD Drain-source voltage: 20V Drain current: 9A |
Produkt ist nicht verfügbar |
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| SQ1421EDH-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1A Power dissipation: 0.5W Case: SC70-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| SIA4265EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -20A Power dissipation: 15.6W Gate-source voltage: ±8V On-state resistance: 67.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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1.5SMC200A-E3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Semiconductor structure: unidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
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VR37000002004JA100 | VISHAY |
Category: THT Resistors Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C Type of resistor: metal glaze Mounting: THT Resistance: 2MΩ Power: 0.5W Tolerance: ±5% Max. operating voltage: 3.5kV DC Body dimensions: Ø4x10mm Temperature coefficient: 200ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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VS-30CTQ060-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 0.56V Case: TO220AB Kind of package: tube Max. forward impulse current: 260A |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-30CTQ060S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Capacitance: 500pF Max. forward voltage: 0.82V Case: D2PAK Kind of package: tube Leakage current: 7mA Max. forward impulse current: 1kA |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12062K00FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 2kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 10700 Stücke: Lieferzeit 14-21 Tag (e) |
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LCS964MCS04020DB00 | VISHAY |
Category: SMD resistors Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs. Type of kit: resistors Mounting: SMD Case - inch: 0402 Case - mm: 1005 Tolerance: ±0.1% Range of values: 47Ω...221kΩ Number of values: 90 Quantity in set/package: 3600pcs. |
Produkt ist nicht verfügbar |
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VJ0603Y103MXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 10nF Operating voltage: 50V Dielectric: X7R Tolerance: ±20% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
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| MRS25000C4702FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 47kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 47kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 47kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 47kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.29 EUR |
| 600+ | 0.12 EUR |
| 1000+ | 0.074 EUR |
| 5000+ | 0.055 EUR |
| MRS25000C4703FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 470kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 470kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 470kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 470kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 2360 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 510+ | 0.14 EUR |
| 1230+ | 0.058 EUR |
| 1990+ | 0.036 EUR |
| MRS25000C4704FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 4.7MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 4.7MΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 4.7MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 4.7MΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 1310 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.3 EUR |
| 590+ | 0.12 EUR |
| 1000+ | 0.075 EUR |
| MRS25000C4709FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 47Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Mounting: THT
Power: 0.6W
Type of resistor: thin film
Resistance: 47Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Category: THT Resistors
Description: Resistor: thin film; THT; 47Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Mounting: THT
Power: 0.6W
Type of resistor: thin film
Resistance: 47Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
auf Bestellung 4670 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 540+ | 0.13 EUR |
| 1300+ | 0.055 EUR |
| 3030+ | 0.024 EUR |
| 3200+ | 0.022 EUR |
| MRS25000C4753FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 475kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 475kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 475kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 475kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| MRS25000C4759FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 47.5Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 47.5Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 47.5Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 47.5Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| MRS25000C4871FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 4.87kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 4.87kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 4.87kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 4.87kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| MRS25000C4872FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 48.7kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 48.7kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 48.7kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 48.7kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 4380 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 540+ | 0.13 EUR |
| 1300+ | 0.055 EUR |
| 3020+ | 0.024 EUR |
| 3200+ | 0.022 EUR |
| MRS25000C4879FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 48.7Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 48.7Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 48.7Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 48.7Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| MRS25000C4992FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 49.9kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 49.9kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 49.9kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 49.9kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| VO0630T |
|
Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 6kV; 10Mbps; SO8; VO06xxT
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 6kV
Transfer rate: 10Mbps
Case: SO8
Turn-on time: 23ns
Turn-off time: 7ns
Manufacturer series: VO06xxT
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 6kV; 10Mbps; SO8; VO06xxT
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 6kV
Transfer rate: 10Mbps
Case: SO8
Turn-on time: 23ns
Turn-off time: 7ns
Manufacturer series: VO06xxT
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.47 EUR |
| 56+ | 1.29 EUR |
| 59+ | 1.22 EUR |
| 63+ | 1.15 EUR |
| 100+ | 1.12 EUR |
| VO2630-X007T |
|
Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2630
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2630
Produkt ist nicht verfügbar
| VO2630-X009T |
|
Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2630
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2630
Produkt ist nicht verfügbar
| MAL213630221E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 220uF; 35VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 220µF
Operating voltage: 35V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 6000h
Operating temperature: -55...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 220uF; 35VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 220µF
Operating voltage: 35V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 6000h
Operating temperature: -55...105°C
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.53 EUR |
| 66+ | 1.09 EUR |
| 104+ | 0.69 EUR |
| 110+ | 0.65 EUR |
| TEMD1020 |
|
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; 1.9mm; Gull wing; SMD; 940nm; 870÷950nm; 30°; black
Type of photoelement: PIN photodiode
LED diameter: 1.9mm
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 870...950nm
Viewing angle: 30°
Active area: 0.23mm2
Front: convex
LED lens: black
Dimensions: 2.5x2x2.7mm
Operating temperature: -40...85°C
Category: Photodiodes
Description: PIN photodiode; 1.9mm; Gull wing; SMD; 940nm; 870÷950nm; 30°; black
Type of photoelement: PIN photodiode
LED diameter: 1.9mm
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 870...950nm
Viewing angle: 30°
Active area: 0.23mm2
Front: convex
LED lens: black
Dimensions: 2.5x2x2.7mm
Operating temperature: -40...85°C
auf Bestellung 2886 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 106+ | 0.68 EUR |
| 118+ | 0.61 EUR |
| 176+ | 0.41 EUR |
| 218+ | 0.33 EUR |
| 230+ | 0.31 EUR |
| TEMD5110X01 |
|
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; SMD; 940nm; 870÷950nm; 65°; flat; black
Type of photoelement: PIN photodiode
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 870...950nm
Viewing angle: 65°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 5x4.24x1.12mm
Category: Photodiodes
Description: PIN photodiode; SMD; 940nm; 870÷950nm; 65°; flat; black
Type of photoelement: PIN photodiode
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 870...950nm
Viewing angle: 65°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 5x4.24x1.12mm
auf Bestellung 3967 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| 87+ | 0.83 EUR |
| 89+ | 0.8 EUR |
| TEMD5510FX01 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: PIN photodiode; 65°; Dim: 5x4.24x1.12mm; λp max: 540nm; 7.5mm2
Dimensions: 5x4.24x1.12mm
Mounting: SMD
Front: flat
Viewing angle: 65°
Type of photoelement: PIN photodiode
Wavelength of peak sensitivity: 540nm
Active area: 7.5mm2
Category: IR receiver modules
Description: PIN photodiode; 65°; Dim: 5x4.24x1.12mm; λp max: 540nm; 7.5mm2
Dimensions: 5x4.24x1.12mm
Mounting: SMD
Front: flat
Viewing angle: 65°
Type of photoelement: PIN photodiode
Wavelength of peak sensitivity: 540nm
Active area: 7.5mm2
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.52 EUR |
| 40+ | 1.79 EUR |
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| 500+ | 1.27 EUR |
| TEMD6200FX01 |
|
Hersteller: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; PCB; Body dim: 2x1.25x0.85mm; -40÷100°C
Mounting: PCB
Wavelength: 540nm
Body dimensions: 2x1.25x0.85mm
Operating temperature: -40...100°C
Type of sensor: photoelectric
Response time: <150ns
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; PCB; Body dim: 2x1.25x0.85mm; -40÷100°C
Mounting: PCB
Wavelength: 540nm
Body dimensions: 2x1.25x0.85mm
Operating temperature: -40...100°C
Type of sensor: photoelectric
Response time: <150ns
Produkt ist nicht verfügbar
| TEMD7100X01 |
|
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; SMD; 950nm; 750÷1050nm; 120°; flat; black
Type of photoelement: PIN photodiode
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 750...1050nm
Viewing angle: 120°
Active area: 0.23mm2
Front: flat
LED lens: black
Dimensions: 2x1.25x0.85mm
Category: Photodiodes
Description: PIN photodiode; SMD; 950nm; 750÷1050nm; 120°; flat; black
Type of photoelement: PIN photodiode
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 750...1050nm
Viewing angle: 120°
Active area: 0.23mm2
Front: flat
LED lens: black
Dimensions: 2x1.25x0.85mm
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 88+ | 0.82 EUR |
| 203+ | 0.35 EUR |
| 215+ | 0.33 EUR |
| IRFPG40PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.58 EUR |
| 23+ | 3.2 EUR |
| 28+ | 2.57 EUR |
| 30+ | 2.43 EUR |
| SI7370DP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15.8A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.8A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15.8A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.8A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MRS25000C3602FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 36kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 36kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 36kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 36kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 4670 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 510+ | 0.14 EUR |
| 1230+ | 0.058 EUR |
| 1990+ | 0.036 EUR |
| SI1499DH-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Power dissipation: 2.78W
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Power dissipation: 2.78W
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| SI1499DH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Power dissipation: 2.78W
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Power dissipation: 2.78W
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| K473K15X7RF5TL2 |
|
Hersteller: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 47nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Tolerance: ±10%
Operating voltage: 50V
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 47nF
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 47nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Tolerance: ±10%
Operating voltage: 50V
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 47nF
Produkt ist nicht verfügbar
| CRCW0603470RFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
auf Bestellung 95100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3300+ | 0.022 EUR |
| 15900+ | 0.0045 EUR |
| 31100+ | 0.0023 EUR |
| 35800+ | 0.002 EUR |
| 37600+ | 0.0019 EUR |
| CRCW0603470RJNEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
auf Bestellung 12300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2600+ | 0.028 EUR |
| 9800+ | 0.0073 EUR |
| 12300+ | 0.0059 EUR |
| CRCW0603470RJNTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2700+ | 0.027 EUR |
| CRCW0201470RFNTDBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 470Ω; 50mW; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 470Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Max. operating voltage: 30V
Power: 50mW
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 470Ω; 50mW; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 470Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Max. operating voltage: 30V
Power: 50mW
Type of resistor: thick film
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)| IRFU220PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 538 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 124+ | 0.58 EUR |
| 140+ | 0.51 EUR |
| 162+ | 0.44 EUR |
| 171+ | 0.42 EUR |
| VS-70HF30 |
|
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 300V; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 300V; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Produkt ist nicht verfügbar
| IRF9Z10PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z14PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z14SPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z14STRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Mounting: SMD
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -27A
Case: D2PAK; TO263
Drain-source voltage: -60V
Drain current: -6.7A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Mounting: SMD
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -27A
Case: D2PAK; TO263
Drain-source voltage: -60V
Drain current: -6.7A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| IRF9Z20PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.7A
Pulsed drain current: -39A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.7A
Pulsed drain current: -39A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z30PBF | |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9010PBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9010TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9010TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014TRPBF-BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9110TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9214TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9214TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DG9424EDQ-T1-GE3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: analog switch
Resistance: 3Ω
Output configuration: SPST-NO
Number of channels: 4
Supply voltage: 3...8V; 3...16V
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: analog switch
Resistance: 3Ω
Output configuration: SPST-NO
Number of channels: 4
Supply voltage: 3...8V; 3...16V
Produkt ist nicht verfügbar
| SI1424EDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
Produkt ist nicht verfügbar
| SI1427EDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| SI1428EDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
Produkt ist nicht verfügbar
| SIB422EDK-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W
Kind of package: reel; tape
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 13W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 25A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W
Kind of package: reel; tape
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 13W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 25A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 9A
Produkt ist nicht verfügbar
| SQ1421EDH-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| SIA4265EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 1.5SMC200A-E3/57T |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.96 EUR |
| 143+ | 0.5 EUR |
| 161+ | 0.44 EUR |
| 173+ | 0.41 EUR |
| 180+ | 0.4 EUR |
| 183+ | 0.39 EUR |
| 850+ | 0.38 EUR |
| VR37000002004JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 2MΩ
Power: 0.5W
Tolerance: ±5%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 2MΩ
Power: 0.5W
Tolerance: ±5%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| VS-30CTQ060-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 260A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 260A
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 2 EUR |
| 40+ | 1.83 EUR |
| 45+ | 1.62 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.34 EUR |
| VS-30CTQ060S-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 500pF
Max. forward voltage: 0.82V
Case: D2PAK
Kind of package: tube
Leakage current: 7mA
Max. forward impulse current: 1kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 500pF
Max. forward voltage: 0.82V
Case: D2PAK
Kind of package: tube
Leakage current: 7mA
Max. forward impulse current: 1kA
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.86 EUR |
| 43+ | 1.67 EUR |
| 49+ | 1.49 EUR |
| 59+ | 1.23 EUR |
| 61+ | 1.17 EUR |
| CRCW12062K00FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 10700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1800+ | 0.042 EUR |
| 3000+ | 0.025 EUR |
| 4600+ | 0.016 EUR |
| 9800+ | 0.0073 EUR |
| 10700+ | 0.0067 EUR |
| LCS964MCS04020DB00 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs.
Type of kit: resistors
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Tolerance: ±0.1%
Range of values: 47Ω...221kΩ
Number of values: 90
Quantity in set/package: 3600pcs.
Category: SMD resistors
Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs.
Type of kit: resistors
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Tolerance: ±0.1%
Range of values: 47Ω...221kΩ
Number of values: 90
Quantity in set/package: 3600pcs.
Produkt ist nicht verfügbar
| VJ0603Y103MXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±20%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±20%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3500+ | 0.02 EUR |