| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-70HF30 | VISHAY |
 Category: Stud mounting universal diodesDescription: Diode: rectifying; 300V; 1.35V; 70A; cathode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 300V Max. forward voltage: 1.35V Load current: 70A Max. load current: 110A Semiconductor structure: cathode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1kA Kind of package: bulk |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRF9Z10PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRF9Z14PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRF9Z14SPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRF9Z14STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Mounting: SMD Power dissipation: 43W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -27A Case: D2PAK; TO263 Drain-source voltage: -60V Drain current: -6.7A On-state resistance: 0.5Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRF9Z20PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.7A Pulsed drain current: -39A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRF9Z30PBF | VISHAY |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -18A Pulsed drain current: -60A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFR9010PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFR9010TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFR9010TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFR9014TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
IRFR9014TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||
| IRFR9014TRPBF-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFR9110TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.1A Pulsed drain current: -12A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFR9214TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFR9214TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
DG9424EDQ-T1-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape Case: TSSOP16 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: analog switch Resistance: 3Ω Output configuration: SPST-NO Number of channels: 4 Supply voltage: 3...8V; 3...16V |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
SI1424EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70 Drain-source voltage: 20V Drain current: 4A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SC70 |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
SI1427EDH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.8W Case: SC70 Gate-source voltage: ±8V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
SI1428EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70 Mounting: SMD Drain current: 4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SC70 Drain-source voltage: 30V |
Produkt ist nicht verfügbar |
|||||||||||||||
| SIB422EDK-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W Kind of package: reel; tape On-state resistance: 82mΩ Type of transistor: N-MOSFET Power dissipation: 13W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 25A Mounting: SMD Drain-source voltage: 20V Drain current: 9A |
Produkt ist nicht verfügbar |
||||||||||||||||
| SQ1421EDH-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1A Power dissipation: 0.5W Case: SC70-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||||||
| SIA4265EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -20A Power dissipation: 15.6W Gate-source voltage: ±8V On-state resistance: 67.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
1.5SMC200A-E3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Semiconductor structure: unidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
VR37000002004JA100 | VISHAY |
Category: THT Resistors Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C Type of resistor: metal glaze Mounting: THT Resistance: 2MΩ Power: 0.5W Tolerance: ±5% Max. operating voltage: 3.5kV DC Body dimensions: Ø4x10mm Temperature coefficient: 200ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
VS-30CTQ060-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 0.56V Case: TO220AB Kind of package: tube Max. forward impulse current: 260A |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
VS-30CTQ060S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Capacitance: 500pF Max. forward voltage: 0.82V Case: D2PAK Kind of package: tube Leakage current: 7mA Max. forward impulse current: 1kA |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
CRCW12062K00FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 2kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 10700 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 +1 |
LCS964MCS04020DB00 | VISHAY |
Category: SMD resistors Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs. Type of kit: resistors Mounting: SMD Case - inch: 0402 Case - mm: 1005 Tolerance: ±0.1% Range of values: 47Ω...221kΩ Number of values: 90 Quantity in set/package: 3600pcs. |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
VJ0603Y103MXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 10nF Operating voltage: 50V Dielectric: X7R Tolerance: ±20% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
CRCW06033M90FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.9MΩ; 0.1W; ±1%; -55÷155°C Tolerance: ±1% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...155°C Resistance: 3.9MΩ Power: 0.1W Max. operating voltage: 75V Type of resistor: thick film |
auf Bestellung 8200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MAL215957471E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; 470uF; 450VDC; Ø35x50mm; ±20%; -40÷105°C Body dimensions: Ø35x50mm Operating temperature: -40...105°C Tolerance: ±20% Type of capacitor: electrolytic Capacitance: 470µF Operating voltage: 450V DC |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| SI1965DH-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 4.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -3A Mounting: SMD Case: SC70-6; SOT363 Drain-source voltage: -12V Drain current: -1.3A On-state resistance: 710mΩ Type of transistor: P-MOSFET x2 |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI1965DH-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 4.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -3A Mounting: SMD Case: SC70-6; SOT363 Drain-source voltage: -12V Drain current: -1.3A On-state resistance: 710mΩ Type of transistor: P-MOSFET x2 |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
SMBJ78A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 91.25V; 4.8A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 91.25V Max. forward impulse current: 4.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 2810 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SMBJ78D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 88.1V; 4.86A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 88.1V Max. forward impulse current: 4.86A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
MRS25000C2103FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 210kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 210kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 4890 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| SI1040X-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.43A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SC89-6 On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 1.8...8V DC |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
S1FLM-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 22A Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 22A Case: SMF Max. forward voltage: 1.1V Kind of package: reel; tape Features of semiconductor devices: glass passivated; ultrafast switching Leakage current: 50µA Type of diode: rectifying Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 1.8µs |
auf Bestellung 5595 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SQ4284EY-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
MBB02070C1503FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 150kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 150kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 2280 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
T73XX104KT20 | VISHAY |
Category: Single turn THT trimmers Description: Potentiometer: mounting; single turn,vertical; 100kΩ; 500mW; ±10% Type of potentiometer: mounting Kind of potentiometer: single turn; vertical Resistance: 100kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Potentiometer series: T73RXXX Track material: cermet Operating temperature: -55...125°C Potentiometer standard: 1/4" Temperature coefficient: 100ppm/°C Terminal pitch: 2.54x2.54mm Max. operating voltage: 250V IP rating: IP67 Torque: 2Ncm Electrical rotation angle: 250 ±15° Mechanical rotation angle: 290 ±5° Potentiometer features: clear scale reading |
auf Bestellung 337 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
T73YE104KT20 | VISHAY |
Category: Single turn THT trimmers Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW Type of potentiometer: mounting Kind of potentiometer: horizontal; single turn Resistance: 100kΩ Power: 0.5W Tolerance: ±10% Characteristics: linear Potentiometer series: T73RYE Potentiometer standard: 1/4" Mechanical rotation angle: 290 ±5° Torque: 2Ncm Max. operating voltage: 250V Operating temperature: -55...125°C Mounting: THT Terminal pitch: 2.54x2.54mm Track material: cermet Electrical rotation angle: 250 ±15° Temperature coefficient: 100ppm/°C Potentiometer features: clear scale reading IP rating: IP67 |
auf Bestellung 978 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
T73YP104KT20 | VISHAY |
Category: Single turn THT trimmers Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW Type of potentiometer: mounting Kind of potentiometer: horizontal; single turn Resistance: 100kΩ Power: 0.5W Tolerance: ±10% Characteristics: linear Potentiometer series: T73RYP Potentiometer standard: 1/4" Mechanical rotation angle: 290 ±5° Torque: 2Ncm Max. operating voltage: 250V Operating temperature: -55...125°C Mounting: THT Terminal pitch: 2.54x2.54mm Track material: cermet Electrical rotation angle: 250 ±15° Temperature coefficient: 100ppm/°C Potentiometer features: clear scale reading IP rating: IP67 |
auf Bestellung 1164 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SMF26A-E3-08 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 200W; 28.9V; 4.8A; unidirectional; SMF; reel,tape; eSMP® Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 4.8A Semiconductor structure: unidirectional Case: SMF Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Technology: eSMP® |
Produkt ist nicht verfügbar |
|||||||||||||||
| RS2J-E3/52T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DO214AA; SMB Max. forward voltage: 1.3V Max. forward impulse current: 50A Leakage current: 0.2mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
RS2J-E3/5BT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Case: DO214AA; SMB Capacitance: 17pF Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1.5A Semiconductor structure: single diode Reverse recovery time: 250ns Max. forward impulse current: 50A Leakage current: 0.2mA |
auf Bestellung 2560 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| RS2JHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 17pF Case: DO214AA; SMB Max. forward voltage: 1.3V Max. forward impulse current: 50A Leakage current: 0.2mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI8817DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Power dissipation: 0.9W On-state resistance: 0.32Ω Polarisation: unipolar Technology: TrenchFET® Pulsed drain current: -15A Gate charge: 19nC Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -20V Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
||||||||||||||||
|
|
MBB02070C8251FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 8.25kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 8.25kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 1290 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
VJ0402A820GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±2%; SMD; 0402 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VJ0402A820GXXAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 25V; C0G (NP0); ±2%; SMD; 0402 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 25V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VJ0402A820JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0402 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VJ0603A820FXAPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±1%; SMD; 0603 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VJ0603A820JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 5600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
VJ1206A820FXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 100V; C0G (NP0); ±1%; SMD; 1206 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
TSHG8200 | VISHAY |
Category: IR LEDs Description: IR transmitter; 5mm; 830nm; transparent; 50mW; 20°; THT; 100mA Type of diode: IR transmitter LED diameter: 5mm Wavelength: 830nm LED lens: transparent Optical power: 50mW Viewing angle: 20° Mounting: THT LED current: 100mA Operating voltage: 1.5...1.8V |
auf Bestellung 3960 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| ILQ615-4X009 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 4 Kind of output: transistor Insulation voltage: 4.42kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: SMD16 Conform to the norm: UL Turn-on time: 6µs Turn-off time: 25µs Max. off-state voltage: 6V Manufacturer series: ILQ615 |
Produkt ist nicht verfügbar |
||||||||||||||||
| MCT62H | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Mounting: THT Manufacturer series: MCT62H Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@5mA Case: DIP8 Collector-emitter voltage: 70V Type of optocoupler: optocoupler Turn-on time: 6µs Turn-off time: 5µs Max. off-state voltage: 6V Number of channels: 2 |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
RCA040222K0JNED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0402; 22kΩ; 63mW; ±5%; -55÷155°C; 200ppm/°C Resistance: 22kΩ Power: 63mW Tolerance: ±5% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Type of resistor: thick film Conform to the norm: AEC Q200 Case - mm: 1005 Case - inch: 0402 |
Produkt ist nicht verfügbar |
| VS-70HF30 |
|
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 300V; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 300V; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Produkt ist nicht verfügbar
| IRF9Z10PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z14PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z14SPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z14STRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Mounting: SMD
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -27A
Case: D2PAK; TO263
Drain-source voltage: -60V
Drain current: -6.7A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Mounting: SMD
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -27A
Case: D2PAK; TO263
Drain-source voltage: -60V
Drain current: -6.7A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| IRF9Z20PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.7A
Pulsed drain current: -39A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.7A
Pulsed drain current: -39A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z30PBF | |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9010PBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9010TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9010TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014TRPBF-BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9110TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9214TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9214TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DG9424EDQ-T1-GE3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: analog switch
Resistance: 3Ω
Output configuration: SPST-NO
Number of channels: 4
Supply voltage: 3...8V; 3...16V
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: analog switch
Resistance: 3Ω
Output configuration: SPST-NO
Number of channels: 4
Supply voltage: 3...8V; 3...16V
Produkt ist nicht verfügbar
| SI1424EDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
Produkt ist nicht verfügbar
| SI1427EDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| SI1428EDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
Produkt ist nicht verfügbar
| SIB422EDK-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W
Kind of package: reel; tape
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 13W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 25A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W
Kind of package: reel; tape
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 13W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 25A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 9A
Produkt ist nicht verfügbar
| SQ1421EDH-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| SIA4265EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 1.5SMC200A-E3/57T |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.96 EUR |
| 143+ | 0.5 EUR |
| 161+ | 0.44 EUR |
| 173+ | 0.41 EUR |
| 180+ | 0.4 EUR |
| 183+ | 0.39 EUR |
| 850+ | 0.38 EUR |
| VR37000002004JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 2MΩ
Power: 0.5W
Tolerance: ±5%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 2MΩ
Power: 0.5W
Tolerance: ±5%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| VS-30CTQ060-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 260A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 260A
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 2 EUR |
| 40+ | 1.83 EUR |
| 45+ | 1.62 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.34 EUR |
| VS-30CTQ060S-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 500pF
Max. forward voltage: 0.82V
Case: D2PAK
Kind of package: tube
Leakage current: 7mA
Max. forward impulse current: 1kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 500pF
Max. forward voltage: 0.82V
Case: D2PAK
Kind of package: tube
Leakage current: 7mA
Max. forward impulse current: 1kA
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.86 EUR |
| 43+ | 1.67 EUR |
| 49+ | 1.49 EUR |
| 59+ | 1.23 EUR |
| 61+ | 1.17 EUR |
| CRCW12062K00FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 10700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1800+ | 0.042 EUR |
| 3000+ | 0.025 EUR |
| 4600+ | 0.016 EUR |
| 9800+ | 0.0073 EUR |
| 10700+ | 0.0067 EUR |
| LCS964MCS04020DB00 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs.
Type of kit: resistors
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Tolerance: ±0.1%
Range of values: 47Ω...221kΩ
Number of values: 90
Quantity in set/package: 3600pcs.
Category: SMD resistors
Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs.
Type of kit: resistors
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Tolerance: ±0.1%
Range of values: 47Ω...221kΩ
Number of values: 90
Quantity in set/package: 3600pcs.
Produkt ist nicht verfügbar
| VJ0603Y103MXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±20%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±20%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3500+ | 0.02 EUR |
| CRCW06033M90FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.9MΩ; 0.1W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...155°C
Resistance: 3.9MΩ
Power: 0.1W
Max. operating voltage: 75V
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.9MΩ; 0.1W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...155°C
Resistance: 3.9MΩ
Power: 0.1W
Max. operating voltage: 75V
Type of resistor: thick film
auf Bestellung 8200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2200+ | 0.034 EUR |
| 4100+ | 0.018 EUR |
| 6900+ | 0.01 EUR |
| 8200+ | 0.0087 EUR |
| MAL215957471E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; 470uF; 450VDC; Ø35x50mm; ±20%; -40÷105°C
Body dimensions: Ø35x50mm
Operating temperature: -40...105°C
Tolerance: ±20%
Type of capacitor: electrolytic
Capacitance: 470µF
Operating voltage: 450V DC
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; 470uF; 450VDC; Ø35x50mm; ±20%; -40÷105°C
Body dimensions: Ø35x50mm
Operating temperature: -40...105°C
Tolerance: ±20%
Type of capacitor: electrolytic
Capacitance: 470µF
Operating voltage: 450V DC
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.39 EUR |
| SI1965DH-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Produkt ist nicht verfügbar
| SI1965DH-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Produkt ist nicht verfügbar
| SMBJ78A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 91.25V; 4.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 91.25V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 91.25V; 4.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 91.25V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 2810 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.25 EUR |
| 495+ | 0.15 EUR |
| 560+ | 0.13 EUR |
| 675+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| SMBJ78D-M3/H |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 88.1V; 4.86A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 88.1V
Max. forward impulse current: 4.86A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 88.1V; 4.86A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 88.1V
Max. forward impulse current: 4.86A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
| MRS25000C2103FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 210kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 210kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 210kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 210kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 4890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 520+ | 0.14 EUR |
| 1270+ | 0.057 EUR |
| 2040+ | 0.035 EUR |
| SI1040X-T1-GE3 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Produkt ist nicht verfügbar
| S1FLM-GS08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 22A
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 22A
Case: SMF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Leakage current: 50µA
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 22A
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 22A
Case: SMF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Leakage current: 50µA
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
auf Bestellung 5595 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.36 EUR |
| 278+ | 0.26 EUR |
| 463+ | 0.15 EUR |
| 589+ | 0.12 EUR |
| 724+ | 0.099 EUR |
| 1662+ | 0.043 EUR |
| 1755+ | 0.041 EUR |
| SQ4284EY-T1_GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MBB02070C1503FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 150kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 150kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 150kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 150kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 2280 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 630+ | 0.12 EUR |
| 1710+ | 0.042 EUR |
| 1900+ | 0.038 EUR |
| T73XX104KT20 |
|
Hersteller: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,vertical; 100kΩ; 500mW; ±10%
Type of potentiometer: mounting
Kind of potentiometer: single turn; vertical
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RXXX
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 1/4"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 2Ncm
Electrical rotation angle: 250 ±15°
Mechanical rotation angle: 290 ±5°
Potentiometer features: clear scale reading
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,vertical; 100kΩ; 500mW; ±10%
Type of potentiometer: mounting
Kind of potentiometer: single turn; vertical
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RXXX
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 1/4"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 2Ncm
Electrical rotation angle: 250 ±15°
Mechanical rotation angle: 290 ±5°
Potentiometer features: clear scale reading
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 62+ | 1.16 EUR |
| 102+ | 0.7 EUR |
| 108+ | 0.66 EUR |
| T73YE104KT20 |
|
Hersteller: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RYE
Potentiometer standard: 1/4"
Mechanical rotation angle: 290 ±5°
Torque: 2Ncm
Max. operating voltage: 250V
Operating temperature: -55...125°C
Mounting: THT
Terminal pitch: 2.54x2.54mm
Track material: cermet
Electrical rotation angle: 250 ±15°
Temperature coefficient: 100ppm/°C
Potentiometer features: clear scale reading
IP rating: IP67
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RYE
Potentiometer standard: 1/4"
Mechanical rotation angle: 290 ±5°
Torque: 2Ncm
Max. operating voltage: 250V
Operating temperature: -55...125°C
Mounting: THT
Terminal pitch: 2.54x2.54mm
Track material: cermet
Electrical rotation angle: 250 ±15°
Temperature coefficient: 100ppm/°C
Potentiometer features: clear scale reading
IP rating: IP67
auf Bestellung 978 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.43 EUR |
| 58+ | 1.24 EUR |
| 84+ | 0.86 EUR |
| 89+ | 0.81 EUR |
| 500+ | 0.78 EUR |
| T73YP104KT20 |
|
Hersteller: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RYP
Potentiometer standard: 1/4"
Mechanical rotation angle: 290 ±5°
Torque: 2Ncm
Max. operating voltage: 250V
Operating temperature: -55...125°C
Mounting: THT
Terminal pitch: 2.54x2.54mm
Track material: cermet
Electrical rotation angle: 250 ±15°
Temperature coefficient: 100ppm/°C
Potentiometer features: clear scale reading
IP rating: IP67
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RYP
Potentiometer standard: 1/4"
Mechanical rotation angle: 290 ±5°
Torque: 2Ncm
Max. operating voltage: 250V
Operating temperature: -55...125°C
Mounting: THT
Terminal pitch: 2.54x2.54mm
Track material: cermet
Electrical rotation angle: 250 ±15°
Temperature coefficient: 100ppm/°C
Potentiometer features: clear scale reading
IP rating: IP67
auf Bestellung 1164 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.54 EUR |
| 54+ | 1.34 EUR |
| 82+ | 0.87 EUR |
| 88+ | 0.82 EUR |
| SMF26A-E3-08 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 200W; 28.9V; 4.8A; unidirectional; SMF; reel,tape; eSMP®
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMF
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Technology: eSMP®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 200W; 28.9V; 4.8A; unidirectional; SMF; reel,tape; eSMP®
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMF
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Technology: eSMP®
Produkt ist nicht verfügbar
| RS2J-E3/52T |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.2mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.2mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RS2J-E3/5BT |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Capacitance: 17pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Max. forward impulse current: 50A
Leakage current: 0.2mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Capacitance: 17pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Max. forward impulse current: 50A
Leakage current: 0.2mA
auf Bestellung 2560 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 155+ | 0.46 EUR |
| 210+ | 0.35 EUR |
| 220+ | 0.33 EUR |
| RS2JHE3_A/H |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 17pF
Case: DO214AA; SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.2mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 17pF
Case: DO214AA; SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.2mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SI8817DB-T2-E1 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
| MBB02070C8251FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 8.25kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 8.25kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 8.25kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 8.25kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 1290 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 340+ | 0.21 EUR |
| 910+ | 0.079 EUR |
| 1010+ | 0.071 EUR |
| VJ0402A820GXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±2%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±2%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0402A820GXXAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 25V; C0G (NP0); ±2%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 25V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 25V; C0G (NP0); ±2%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 25V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0402A820JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0603A820FXAPW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±1%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±1%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0603A820JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 5600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3400+ | 0.021 EUR |
| 5600+ | 0.013 EUR |
| VJ1206A820FXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 100V; C0G (NP0); ±1%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 100V; C0G (NP0); ±1%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| TSHG8200 |
|
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 5mm; 830nm; transparent; 50mW; 20°; THT; 100mA
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 830nm
LED lens: transparent
Optical power: 50mW
Viewing angle: 20°
Mounting: THT
LED current: 100mA
Operating voltage: 1.5...1.8V
Category: IR LEDs
Description: IR transmitter; 5mm; 830nm; transparent; 50mW; 20°; THT; 100mA
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 830nm
LED lens: transparent
Optical power: 50mW
Viewing angle: 20°
Mounting: THT
LED current: 100mA
Operating voltage: 1.5...1.8V
auf Bestellung 3960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 129+ | 0.55 EUR |
| 157+ | 0.46 EUR |
| 182+ | 0.39 EUR |
| 235+ | 0.31 EUR |
| 248+ | 0.29 EUR |
| ILQ615-4X009 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
Produkt ist nicht verfügbar
| MCT62H |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: THT
Manufacturer series: MCT62H
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@5mA
Case: DIP8
Collector-emitter voltage: 70V
Type of optocoupler: optocoupler
Turn-on time: 6µs
Turn-off time: 5µs
Max. off-state voltage: 6V
Number of channels: 2
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: THT
Manufacturer series: MCT62H
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@5mA
Case: DIP8
Collector-emitter voltage: 70V
Type of optocoupler: optocoupler
Turn-on time: 6µs
Turn-off time: 5µs
Max. off-state voltage: 6V
Number of channels: 2
Produkt ist nicht verfügbar
| RCA040222K0JNED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 22kΩ; 63mW; ±5%; -55÷155°C; 200ppm/°C
Resistance: 22kΩ
Power: 63mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Type of resistor: thick film
Conform to the norm: AEC Q200
Case - mm: 1005
Case - inch: 0402
Category: SMD resistors
Description: Resistor: thick film; 0402; 22kΩ; 63mW; ±5%; -55÷155°C; 200ppm/°C
Resistance: 22kΩ
Power: 63mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Type of resistor: thick film
Conform to the norm: AEC Q200
Case - mm: 1005
Case - inch: 0402
Produkt ist nicht verfügbar