| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SML4749-E3/61 | VISHAY |
 Category: SMD Zener diodesDescription: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±10% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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SML4749A-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
Produkt ist nicht verfügbar |
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| Si3410DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 30A Power dissipation: 4.1W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3424CDV-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3433CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -20A Power dissipation: 3.3W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 60mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3437DV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3437DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3438DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3438DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3440DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 1.14W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3442BDV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3442BDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3443BDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 1.1W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3443CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.97A Pulsed drain current: -20A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3453DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Pulsed drain current: -6A Power dissipation: 3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3456DDV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Pulsed drain current: 20A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3457CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 113mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI3459BDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.9A Pulsed drain current: -8A Power dissipation: 3.3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 288mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SS10P6-M3/86A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 280A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS10P6HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Capacitance: 560pF Max. forward voltage: 0.67V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 280A |
Produkt ist nicht verfügbar |
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| BFC233927473 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 47nF; THT; ±20%; 10mm; 630VDC; 310VAC Type of capacitor: polypropylene Capacitance: 47nF Operating voltage: 310V AC; 630V DC Terminal pitch: 10mm Tolerance: ±20% Mounting: THT Body dimensions: 12.5x4x10mm |
Produkt ist nicht verfügbar |
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| SFH6315T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; SOIC8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4kV CTR@If: 7-50%@16mA Transfer rate: 1Mbps Case: SOIC8 Conform to the norm: UL Turn-on time: 0.7µs Turn-off time: 0.5µs Max. off-state voltage: 3V Output voltage: -500mV...25V Manufacturer series: SFH6315 |
Produkt ist nicht verfügbar |
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| SS1P4L-M3/84A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMP; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.38V Case: SMP Kind of package: reel; tape Leakage current: 15mA Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
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SS1P5L-M3/84A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 1A; DO220AA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Capacitance: 80pF Max. forward voltage: 0.59V Case: DO220AA Kind of package: reel; tape Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
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| SS2P2L-M3/84A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMP; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Case: SMP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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CRCW040213K0FKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 13kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 13kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
auf Bestellung 5200 Stücke: Lieferzeit 14-21 Tag (e) |
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SMM02040C1372FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 13.7kΩ; 0.4W; ±1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 13.7kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
auf Bestellung 2203 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2367DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23 Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: -20V Drain current: -3A On-state resistance: 66mΩ Type of transistor: P-MOSFET |
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SQD25N15-52_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 16A Power dissipation: 107W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
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SUD25N15-52-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 50A; 136W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 25A Pulsed drain current: 50A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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GRC00DC1011JTNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 10x12.5mm |
Produkt ist nicht verfügbar |
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MAL202138101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø8x18mm; ±20%; 2500h Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Body dimensions: Ø8x18mm Tolerance: ±20% Leads: axial Service life: 2500h Operating temperature: -40...85°C |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL203138101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x25mm; ±20%; 3000h Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Body dimensions: Ø10x25mm Tolerance: ±20% Leads: axial Service life: 3000h Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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MAL204838101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm Type of capacitor: electrolytic Capacitance: 100µF Operating voltage: 63V DC Service life: 3000h Mounting: THT Terminal pitch: 5mm Operating temperature: -40...105°C Tolerance: ±20% Body dimensions: Ø10x12mm |
auf Bestellung 794 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL204868101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Body dimensions: Ø10x12mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Operating temperature: -40...105°C |
Produkt ist nicht verfügbar |
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| MAL214699806E3 | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 100uF; 63VDC; Ø12.5x13mm; ±20% Operating voltage: 63V DC Capacitance: 100µF Type of capacitor: electrolytic Body dimensions: Ø12.5x13mm Tolerance: ±20% Operating temperature: -55...125°C Mounting: SMD |
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MAL214838101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm Type of capacitor: electrolytic Capacitance: 100µF Operating voltage: 63V DC Service life: 2000h Mounting: THT Terminal pitch: 5mm Operating temperature: -40...105°C Tolerance: ±20% Body dimensions: Ø10x12mm |
Produkt ist nicht verfügbar |
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GSD2004S-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT23; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape Application: automotive industry |
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GSD2004S-HE3-18 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT23; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| IHLP6767DZER4R7M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 4.7uH; 18A; 8.47mΩ; ±20%; 17.15x17.15x4mm; IHLP Mounting: SMD Operating temperature: -55...125°C Manufacturer series: IHLP Resistance: 8.47mΩ Tolerance: ±20% Body dimensions: 17.15x17.15x4mm Operating current: 18A Inductance: 4.7µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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MAL202127101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 40VDC; Ø6.5x18mm; ±20%; 2500h Type of capacitor: electrolytic Body dimensions: Ø6.5x18mm Leads: axial Capacitance: 100µF Operating voltage: 40V DC Service life: 2500h Mounting: THT Operating temperature: -40...85°C Tolerance: ±20% |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL203678478E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 4.7uF; 63VDC; Ø5x11mm; Pitch: 2.5mm Capacitance: 4.7µF Operating voltage: 63V DC Service life: 3000h Mounting: THT Terminal pitch: 2.5mm Operating temperature: -40...85°C Tolerance: ±20% Body dimensions: Ø5x11mm Type of capacitor: electrolytic |
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MAL203690004E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 10uF; 50VDC; Ø5x11mm; Pitch: 2.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 10µF Operating voltage: 50V DC Body dimensions: Ø5x11mm Terminal pitch: 2.5mm Tolerance: ±20% Service life: 3000h Operating temperature: -40...85°C |
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| MAL203690391E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 47uF; 35VDC; Ø5x11mm; ±20%; -55÷85°C Mounting: THT Operating temperature: -55...85°C Body dimensions: Ø5x11mm Type of capacitor: electrolytic Capacitance: 47µF Operating voltage: 35V DC Tolerance: ±20% |
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MAL203690392E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 10uF; 50VDC; Ø5x11mm; Pitch: 2.5mm Mounting: THT Operating temperature: -40...85°C Body dimensions: Ø5x11mm Type of capacitor: electrolytic Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±20% Terminal pitch: 2.5mm Service life: 3000h |
Produkt ist nicht verfügbar |
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MAL203838478E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 4.7uF; 63VDC; Ø5x11mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7µF Operating voltage: 63V DC Body dimensions: Ø5x11mm Terminal pitch: 5mm Tolerance: ±20% Service life: 2500h Operating temperature: -40...85°C |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL203854101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 10VDC; Ø5x11mm; Pitch: 2mm Operating temperature: -40...85°C Type of capacitor: electrolytic Operating voltage: 10V DC Body dimensions: Ø5x11mm Service life: 2500h Capacitance: 100µF Terminal pitch: 2mm Mounting: THT Tolerance: ±20% |
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MAL203870479E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 47uF; 35VDC; Ø5x11mm; Pitch: 2.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 47µF Operating voltage: 35V DC Body dimensions: Ø5x11mm Terminal pitch: 2.5mm Tolerance: ±20% Service life: 2500h Operating temperature: -40...85°C |
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MAL203878478E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 4.7uF; 63VDC; Ø5x11mm; Pitch: 2.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7µF Operating voltage: 63V DC Body dimensions: Ø5x11mm Terminal pitch: 2.5mm Tolerance: ±20% Service life: 2500h Operating temperature: -40...85°C |
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| VS-20ETF12-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 320A; TO220AC; 95ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Kind of package: tube Max. forward impulse current: 320A Case: TO220AC Max. forward voltage: 1.31V Heatsink thickness: 1.14...1.4mm Reverse recovery time: 95ns |
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GSD2004W-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape |
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GSD2004W-E3-18 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape |
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GSD2004W-G3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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GSD2004W-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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GSD2004W-HE3-18 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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GSD2004WS-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD323; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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GSD2004WS-E3-18 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD323; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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GSD2004WS-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD323; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.35W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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VJ0603Y471JXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 470pF; 16V; X7R; ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.47nF Operating voltage: 16V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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VJ0805Y471KXCAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 470pF; 200V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.47nF Operating voltage: 200V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 2640 Stücke: Lieferzeit 14-21 Tag (e) |
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| SML4749-E3/61 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 280+ | 0.26 EUR |
| 310+ | 0.23 EUR |
| 385+ | 0.19 EUR |
| 410+ | 0.18 EUR |
| SML4749A-E3/61 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
| Si3410DV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3424CDV-T1-BE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3433CDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3437DV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3437DV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3438DV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3438DV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3440DV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3442BDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3442BDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3443BDV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3443CDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3453DV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3456DDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3457CDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI3459BDV-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SS10P6-M3/86A |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 74+ | 0.97 EUR |
| 104+ | 0.69 EUR |
| 117+ | 0.61 EUR |
| 136+ | 0.53 EUR |
| 143+ | 0.5 EUR |
| SS10P6HM3-A/H |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 560pF
Max. forward voltage: 0.67V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 560pF
Max. forward voltage: 0.67V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Produkt ist nicht verfügbar
| BFC233927473 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 47nF; THT; ±20%; 10mm; 630VDC; 310VAC
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x4x10mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 47nF; THT; ±20%; 10mm; 630VDC; 310VAC
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x4x10mm
Produkt ist nicht verfügbar
| SFH6315T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 7-50%@16mA
Transfer rate: 1Mbps
Case: SOIC8
Conform to the norm: UL
Turn-on time: 0.7µs
Turn-off time: 0.5µs
Max. off-state voltage: 3V
Output voltage: -500mV...25V
Manufacturer series: SFH6315
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 7-50%@16mA
Transfer rate: 1Mbps
Case: SOIC8
Conform to the norm: UL
Turn-on time: 0.7µs
Turn-off time: 0.5µs
Max. off-state voltage: 3V
Output voltage: -500mV...25V
Manufacturer series: SFH6315
Produkt ist nicht verfügbar
| SS1P4L-M3/84A |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMP
Kind of package: reel; tape
Leakage current: 15mA
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMP
Kind of package: reel; tape
Leakage current: 15mA
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
| SS1P5L-M3/84A |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; DO220AA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.59V
Case: DO220AA
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; DO220AA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.59V
Case: DO220AA
Kind of package: reel; tape
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
| SS2P2L-M3/84A |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Case: SMP
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Case: SMP
Kind of package: reel; tape
Produkt ist nicht verfügbar
| CRCW040213K0FKTDBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 13kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 13kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 13kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 13kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
auf Bestellung 5200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.018 EUR |
| 5200+ | 0.014 EUR |
| SMM02040C1372FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 13.7kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 13.7kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 13.7kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 13.7kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
auf Bestellung 2203 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 750+ | 0.098 EUR |
| 1225+ | 0.06 EUR |
| 1700+ | 0.042 EUR |
| SI2367DS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 66mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 66mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| SQD25N15-52_GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SUD25N15-52-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 50A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 50A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| GRC00DC1011JTNL |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x12.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x12.5mm
Produkt ist nicht verfügbar
| MAL202138101E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø8x18mm; ±20%; 2500h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø8x18mm
Tolerance: ±20%
Leads: axial
Service life: 2500h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø8x18mm; ±20%; 2500h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø8x18mm
Tolerance: ±20%
Leads: axial
Service life: 2500h
Operating temperature: -40...85°C
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.83 EUR |
| 36+ | 2.03 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.19 EUR |
| MAL203138101E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x25mm; ±20%; 3000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 3000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x25mm; ±20%; 3000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 3000h
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| MAL204838101E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 63V DC
Service life: 3000h
Mounting: THT
Terminal pitch: 5mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø10x12mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 63V DC
Service life: 3000h
Mounting: THT
Terminal pitch: 5mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø10x12mm
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 80+ | 0.9 EUR |
| 123+ | 0.58 EUR |
| 130+ | 0.55 EUR |
| MAL204868101E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
| MAL214699806E3 |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 63VDC; Ø12.5x13mm; ±20%
Operating voltage: 63V DC
Capacitance: 100µF
Type of capacitor: electrolytic
Body dimensions: Ø12.5x13mm
Tolerance: ±20%
Operating temperature: -55...125°C
Mounting: SMD
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 63VDC; Ø12.5x13mm; ±20%
Operating voltage: 63V DC
Capacitance: 100µF
Type of capacitor: electrolytic
Body dimensions: Ø12.5x13mm
Tolerance: ±20%
Operating temperature: -55...125°C
Mounting: SMD
Produkt ist nicht verfügbar
| MAL214838101E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 63V DC
Service life: 2000h
Mounting: THT
Terminal pitch: 5mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø10x12mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 63V DC
Service life: 2000h
Mounting: THT
Terminal pitch: 5mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø10x12mm
Produkt ist nicht verfügbar
| GSD2004S-HE3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| GSD2004S-HE3-18 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| IHLP6767DZER4R7M11 |
|
Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 18A; 8.47mΩ; ±20%; 17.15x17.15x4mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 8.47mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x4mm
Operating current: 18A
Inductance: 4.7µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 18A; 8.47mΩ; ±20%; 17.15x17.15x4mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 8.47mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x4mm
Operating current: 18A
Inductance: 4.7µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
| MAL202127101E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 40VDC; Ø6.5x18mm; ±20%; 2500h
Type of capacitor: electrolytic
Body dimensions: Ø6.5x18mm
Leads: axial
Capacitance: 100µF
Operating voltage: 40V DC
Service life: 2500h
Mounting: THT
Operating temperature: -40...85°C
Tolerance: ±20%
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 40VDC; Ø6.5x18mm; ±20%; 2500h
Type of capacitor: electrolytic
Body dimensions: Ø6.5x18mm
Leads: axial
Capacitance: 100µF
Operating voltage: 40V DC
Service life: 2500h
Mounting: THT
Operating temperature: -40...85°C
Tolerance: ±20%
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.65 EUR |
| MAL203678478E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 63VDC; Ø5x11mm; Pitch: 2.5mm
Capacitance: 4.7µF
Operating voltage: 63V DC
Service life: 3000h
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -40...85°C
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 63VDC; Ø5x11mm; Pitch: 2.5mm
Capacitance: 4.7µF
Operating voltage: 63V DC
Service life: 3000h
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -40...85°C
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Produkt ist nicht verfügbar
| MAL203690004E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 50VDC; Ø5x11mm; Pitch: 2.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 50V DC
Body dimensions: Ø5x11mm
Terminal pitch: 2.5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 50VDC; Ø5x11mm; Pitch: 2.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 50V DC
Body dimensions: Ø5x11mm
Terminal pitch: 2.5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| MAL203690391E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 35VDC; Ø5x11mm; ±20%; -55÷85°C
Mounting: THT
Operating temperature: -55...85°C
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 47µF
Operating voltage: 35V DC
Tolerance: ±20%
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 35VDC; Ø5x11mm; ±20%; -55÷85°C
Mounting: THT
Operating temperature: -55...85°C
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 47µF
Operating voltage: 35V DC
Tolerance: ±20%
Produkt ist nicht verfügbar
| MAL203690392E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 50VDC; Ø5x11mm; Pitch: 2.5mm
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Terminal pitch: 2.5mm
Service life: 3000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 50VDC; Ø5x11mm; Pitch: 2.5mm
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Terminal pitch: 2.5mm
Service life: 3000h
Produkt ist nicht verfügbar
| MAL203838478E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 63VDC; Ø5x11mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7µF
Operating voltage: 63V DC
Body dimensions: Ø5x11mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 63VDC; Ø5x11mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7µF
Operating voltage: 63V DC
Body dimensions: Ø5x11mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 190+ | 0.37 EUR |
| MAL203854101E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 10VDC; Ø5x11mm; Pitch: 2mm
Operating temperature: -40...85°C
Type of capacitor: electrolytic
Operating voltage: 10V DC
Body dimensions: Ø5x11mm
Service life: 2500h
Capacitance: 100µF
Terminal pitch: 2mm
Mounting: THT
Tolerance: ±20%
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 10VDC; Ø5x11mm; Pitch: 2mm
Operating temperature: -40...85°C
Type of capacitor: electrolytic
Operating voltage: 10V DC
Body dimensions: Ø5x11mm
Service life: 2500h
Capacitance: 100µF
Terminal pitch: 2mm
Mounting: THT
Tolerance: ±20%
Produkt ist nicht verfügbar
| MAL203870479E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 35VDC; Ø5x11mm; Pitch: 2.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 35V DC
Body dimensions: Ø5x11mm
Terminal pitch: 2.5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 35VDC; Ø5x11mm; Pitch: 2.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 35V DC
Body dimensions: Ø5x11mm
Terminal pitch: 2.5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| MAL203878478E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 63VDC; Ø5x11mm; Pitch: 2.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7µF
Operating voltage: 63V DC
Body dimensions: Ø5x11mm
Terminal pitch: 2.5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 63VDC; Ø5x11mm; Pitch: 2.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7µF
Operating voltage: 63V DC
Body dimensions: Ø5x11mm
Terminal pitch: 2.5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| VS-20ETF12-M3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 320A; TO220AC; 95ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Kind of package: tube
Max. forward impulse current: 320A
Case: TO220AC
Max. forward voltage: 1.31V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 95ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 320A; TO220AC; 95ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Kind of package: tube
Max. forward impulse current: 320A
Case: TO220AC
Max. forward voltage: 1.31V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 95ns
Produkt ist nicht verfügbar
| GSD2004W-E3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| GSD2004W-E3-18 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| GSD2004W-G3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| GSD2004W-HE3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| GSD2004W-HE3-18 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| GSD2004WS-E3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD323; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD323; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| GSD2004WS-E3-18 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD323; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD323; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| GSD2004WS-HE3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD323; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOD323; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| VJ0603Y471JXJCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 470pF; 16V; X7R; ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.47nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 470pF; 16V; X7R; ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.47nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0805Y471KXCAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 470pF; 200V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.47nF
Operating voltage: 200V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 470pF; 200V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.47nF
Operating voltage: 200V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 960+ | 0.075 EUR |
| 1450+ | 0.049 EUR |
| 1540+ | 0.047 EUR |