Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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1.5SMC33CA-E3/9AT | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
Produkt ist nicht verfügbar |
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1.5SMC33CA-M3/57T | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
Produkt ist nicht verfügbar |
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1.5SMC33CA-M3/9AT | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
Produkt ist nicht verfügbar |
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1.5SMC33CAHE3_A/H | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry Technology: TransZorb® Manufacturer series: 1.5SMC |
Produkt ist nicht verfügbar |
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1.5SMC33CAHE3_A/I | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry Technology: TransZorb® Manufacturer series: 1.5SMC |
Produkt ist nicht verfügbar |
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VLMB1300-GS08 | VISHAY |
![]() Description: LED; SMD; 0603; blue; 28÷180mcd; 1.6x0.8x0.8mm; 130°; 2.8÷3.8V; 20mA Type of diode: LED Mounting: SMD Case: 0603 LED colour: blue Luminosity: 28...180mcd Dimensions: 1.6x0.8x0.8mm Viewing angle: 130° LED current: 20mA Wavelength: 465...475nm Front: flat Operating voltage: 2.8...3.8V |
auf Bestellung 730 Stücke: Lieferzeit 14-21 Tag (e) |
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VLMB1310-GS08 | VISHAY |
![]() Description: LED; SMD; 0603; blue; 28÷180mcd; 1.6x0.8x0.8mm; 130°; 2.8÷3.8V; 20mA Type of diode: LED Mounting: SMD Case: 0603 LED colour: blue Luminosity: 28...180mcd Dimensions: 1.6x0.8x0.8mm Viewing angle: 130° LED current: 20mA Wavelength: 465...475nm Front: flat Operating voltage: 2.8...3.8V |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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GRC00DC3311ETNL | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 330uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 330µF Operating voltage: 25V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 10x12.5mm |
Produkt ist nicht verfügbar |
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GSC00AF3311EARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 8x10mm Height: 10mm |
Produkt ist nicht verfügbar |
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GSC00AF3311ETNL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 8x10mm Height: 10mm |
Produkt ist nicht verfügbar |
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MAL202136331E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 330uF; 25VDC; Ø8x18mm; ±20%; 2500h Type of capacitor: electrolytic Mounting: THT Capacitance: 330µF Operating voltage: 25V DC Body dimensions: Ø8x18mm Tolerance: ±20% Leads: axial Service life: 2500h Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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SMM02040D1331BB300 | VISHAY |
![]() Description: Resistor: thin film; SMD; 0204 MiniMELF; 1.33kΩ; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 1.33kΩ Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
Produkt ist nicht verfügbar |
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SMM02040D1332BB300 | VISHAY |
![]() Description: Resistor: thin film; SMD; 0204 MiniMELF; 13.3kΩ; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 13.3kΩ Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
Produkt ist nicht verfügbar |
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MOC8102-X009 | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 73-117%@10mA Collector-emitter voltage: 30V Case: SMD6 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 2.3µs Max. off-state voltage: 6V Manufacturer series: MOC8102 |
Produkt ist nicht verfügbar |
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MOC8102-X017 | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 73-117%@10mA Collector-emitter voltage: 30V Case: SMD6 Conform to the norm: UL; VDE Turn-on time: 3µs Turn-off time: 2.3µs Max. off-state voltage: 6V Manufacturer series: MOC8102 |
Produkt ist nicht verfügbar |
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MOC8102-X017T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 73-117%@10mA Collector-emitter voltage: 30V Case: SMD6 Conform to the norm: UL; VDE Turn-on time: 3µs Turn-off time: 2.3µs Max. off-state voltage: 6V Manufacturer series: MOC8102 |
Produkt ist nicht verfügbar |
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PR02000203009JA100 | VISHAY |
![]() Description: Resistor: power metal; THT; 30Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 30Ω Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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PR03000203009JAC00 | VISHAY |
![]() Description: Resistor: power metal; THT; 30Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 30Ω Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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T63YB502KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 5kΩ; 250mW; ±10%; linear; T63YB Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 5kΩ Power: 0.25W Number of mechanical turns: 15 ±5 Tolerance: ±10% Characteristics: linear Potentiometer series: T63YB Body dimensions: 6.8x6.8x5mm Potentiometer standard: 1/4" Mounting: THT Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Number of electrical turns: 13 ±2 Track material: cermet Terminal pitch: 2.5x2.5mm Max. operating voltage: 250V IP rating: IP67 Torque: 1Ncm |
auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9010PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -1.1A; Idm: -8.8A; 1W; HVMDIP Case: HVMDIP Mounting: THT Kind of package: tube Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8.8A Drain-source voltage: -50V Drain current: -1.1A On-state resistance: 0.5Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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K154K20X7RF5TL2 | VISHAY |
![]() Description: Capacitor: ceramic; 150nF; 50V; X7R; ±10%; THT; 2.5mm Type of capacitor: ceramic Capacitance: 0.15µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: THT Terminal pitch: 2.5mm Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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PR02000205102JA100 | VISHAY |
![]() Description: Resistor: power metal; THT; 51kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 51kΩ Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805301KFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 301kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 301kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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MRS25000C1544FCT00 | VISHAY |
![]() Description: Resistor: thin film; THT; 1.54MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Max. operating voltage: 350V Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Mounting: THT Type of resistor: thin film Power: 0.6W Resistance: 1.54MΩ Tolerance: ±1% Body dimensions: Ø2.5x6.5mm |
Produkt ist nicht verfügbar |
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BY527TAP | VISHAY |
![]() Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 2A Max. load current: 12A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 16pF Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.65V Leakage current: 10µA Reverse recovery time: 4µs |
auf Bestellung 14310 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM80090E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 128A Pulsed drain current: 240A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SUP80090E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain current: 74A On-state resistance: 9.4mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Drain-source voltage: 150V Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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SI6968BEDQ-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 30A Power dissipation: 1.5W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI6968BEDQ-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 30A Power dissipation: 1.5W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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VLMC3100-GS08 | VISHAY |
![]() Description: LED; SMD; 3528,PLCC2; green; 0.71÷1.6mcd; 3.5x2.8x1.75mm; 120° Type of diode: LED Mounting: SMD Case: 3528; PLCC2 LED colour: green Luminosity: 0.71...1.6mcd Dimensions: 3.5x2.8x1.75mm Viewing angle: 120° LED current: 2mA Wavelength: 562...575nm Front: flat Operating voltage: 1.9...2.4V |
auf Bestellung 6840 Stücke: Lieferzeit 14-21 Tag (e) |
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VLMC3100-GS18 | VISHAY |
![]() Description: LED; SMD; 3528,PLCC2; green; 0.71÷1.6mcd; 3.5x2.8x1.75mm; 60°; 2mA Type of diode: LED Mounting: SMD Case: 3528; PLCC2 LED colour: green Luminosity: 0.71...1.6mcd Dimensions: 3.5x2.8x1.75mm Viewing angle: 60° LED current: 2mA Wavelength: 562...575nm Front: flat Operating voltage: 1.9...2.4V |
auf Bestellung 4635 Stücke: Lieferzeit 14-21 Tag (e) |
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TZMB9V1-GS08 | VISHAY |
![]() Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF Semiconductor structure: single diode |
auf Bestellung 4580 Stücke: Lieferzeit 14-21 Tag (e) |
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TZMC9V1-GS08 | VISHAY |
![]() Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF Semiconductor structure: single diode |
auf Bestellung 5037 Stücke: Lieferzeit 14-21 Tag (e) |
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VLMT3100-GS08 | VISHAY |
![]() Description: LED; SMD; 3528,PLCC2; red; 2.8÷11.2mcd; 3.5x2.8x1.75mm; 60°; 2mA Type of diode: LED Mounting: SMD Case: 3528; PLCC2 LED colour: red Luminosity: 2.8...11.2mcd Dimensions: 3.5x2.8x1.75mm Viewing angle: 60° LED current: 2mA Wavelength: 612...625nm Front: flat Operating voltage: 2.2...2.9V |
auf Bestellung 1080 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG25N40D-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 16A; Idm: 78A; 278W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 16A Pulsed drain current: 78A Power dissipation: 278W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIHP25N40D-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 16A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 16A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 513 Stücke: Lieferzeit 14-21 Tag (e) |
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SA70CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; reel,tape Case: DO15 Mounting: THT Breakdown voltage: 77.8...86V Kind of package: reel; tape Technology: TransZorb® Max. forward impulse current: 4.4A Peak pulse power dissipation: 500W Features of semiconductor devices: glass passivated Max. off-state voltage: 70V Semiconductor structure: bidirectional Leakage current: 1µA Type of diode: TVS |
Produkt ist nicht verfügbar |
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SA70CA-E3/73 | VISHAY |
![]() Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; Ammo Pack Case: DO15 Mounting: THT Breakdown voltage: 77.8...86V Kind of package: Ammo Pack Technology: TransZorb® Max. forward impulse current: 4.4A Peak pulse power dissipation: 500W Features of semiconductor devices: glass passivated Max. off-state voltage: 70V Semiconductor structure: bidirectional Leakage current: 1µA Type of diode: TVS |
Produkt ist nicht verfügbar |
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TSOP6133TR | VISHAY |
![]() Description: Integrated IR receiver; 33kHz; 2.5÷5.5V; 50° Type of photoelement: integrated IR receiver Frequency: 33kHz Mounting: SMD Viewing angle: 50° Supply voltage: 2.5...5.5V |
auf Bestellung 5434 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ36CA-E3/57T | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 40V; 25.8A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
auf Bestellung 1796 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ36CA-E3/9AT | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 42.1V; 25.8A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 42.1V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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VJ0805A820GXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 82pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A820JXAAC | VISHAY |
![]() Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805 Mounting: SMD Operating temperature: -55...125°C Case - mm: 2012 Tolerance: ±5% Case - inch: 0805 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 82pF Operating voltage: 50V |
Produkt ist nicht verfügbar |
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VJ0805A820JXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 82pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 5700 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A820JXCCW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 82pF; 200V; C0G (NP0); ±5%; SMD; 0805 Mounting: SMD Operating temperature: -55...125°C Case - mm: 2012 Tolerance: ±5% Case - inch: 0805 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 82pF Operating voltage: 200V |
Produkt ist nicht verfügbar |
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VJ0805L820GXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 82pF; 50V; ±2%; SMD; 0805 Mounting: SMD Operating temperature: -55...125°C Case - mm: 2012 Tolerance: ±2% Case - inch: 0805 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 50V |
Produkt ist nicht verfügbar |
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SML4741A-E3/61 | VISHAY |
![]() Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
Produkt ist nicht verfügbar |
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P6SMB11A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB11A-E3/5B | VISHAY |
![]() Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB11A-M3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB11A-M3/5B | VISHAY |
![]() Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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BYX86TAP | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 2A; Ammo Pack; Ifsm: 50A; SOD57; Ir: 25uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1V Leakage current: 25µA Reverse recovery time: 4µs |
Produkt ist nicht verfügbar |
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SMBJ22CA-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 19.9V; 16.9A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 19.9V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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SMBJ22CD-M3/H | VISHAY |
![]() Description: Diode: TVS; 600W; 24.8V; 17.1A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.8V Max. forward impulse current: 17.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 702 Stücke: Lieferzeit 14-21 Tag (e) |
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SIJ438DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 200A Power dissipation: 69.4W On-state resistance: 1.75mΩ Mounting: SMD Gate charge: 182nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIR104DP-T1-RE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIR120DP-T1-RE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 106A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIR170DP-T1-RE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.85mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SiR668DP-T1-RE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIR670DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 200A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
1.5SMC33CA-E3/9AT |
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Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Produkt ist nicht verfügbar
1.5SMC33CA-M3/57T |
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Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Produkt ist nicht verfügbar
1.5SMC33CA-M3/9AT |
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Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Produkt ist nicht verfügbar
1.5SMC33CAHE3_A/H |
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Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Technology: TransZorb®
Manufacturer series: 1.5SMC
Produkt ist nicht verfügbar
1.5SMC33CAHE3_A/I |
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Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Technology: TransZorb®
Manufacturer series: 1.5SMC
Produkt ist nicht verfügbar
VLMB1300-GS08 |
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Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; blue; 28÷180mcd; 1.6x0.8x0.8mm; 130°; 2.8÷3.8V; 20mA
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: blue
Luminosity: 28...180mcd
Dimensions: 1.6x0.8x0.8mm
Viewing angle: 130°
LED current: 20mA
Wavelength: 465...475nm
Front: flat
Operating voltage: 2.8...3.8V
Category: SMD colour LEDs
Description: LED; SMD; 0603; blue; 28÷180mcd; 1.6x0.8x0.8mm; 130°; 2.8÷3.8V; 20mA
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: blue
Luminosity: 28...180mcd
Dimensions: 1.6x0.8x0.8mm
Viewing angle: 130°
LED current: 20mA
Wavelength: 465...475nm
Front: flat
Operating voltage: 2.8...3.8V
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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330+ | 0.22 EUR |
585+ | 0.12 EUR |
730+ | 0.097 EUR |
VLMB1310-GS08 |
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Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; blue; 28÷180mcd; 1.6x0.8x0.8mm; 130°; 2.8÷3.8V; 20mA
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: blue
Luminosity: 28...180mcd
Dimensions: 1.6x0.8x0.8mm
Viewing angle: 130°
LED current: 20mA
Wavelength: 465...475nm
Front: flat
Operating voltage: 2.8...3.8V
Category: SMD colour LEDs
Description: LED; SMD; 0603; blue; 28÷180mcd; 1.6x0.8x0.8mm; 130°; 2.8÷3.8V; 20mA
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: blue
Luminosity: 28...180mcd
Dimensions: 1.6x0.8x0.8mm
Viewing angle: 130°
LED current: 20mA
Wavelength: 465...475nm
Front: flat
Operating voltage: 2.8...3.8V
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
330+ | 0.22 EUR |
660+ | 0.11 EUR |
880+ | 0.082 EUR |
1085+ | 0.066 EUR |
1145+ | 0.062 EUR |
GRC00DC3311ETNL |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x12.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x12.5mm
Produkt ist nicht verfügbar
GSC00AF3311EARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
Produkt ist nicht verfügbar
GSC00AF3311ETNL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
Produkt ist nicht verfügbar
MAL202136331E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 25VDC; Ø8x18mm; ±20%; 2500h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: Ø8x18mm
Tolerance: ±20%
Leads: axial
Service life: 2500h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 25VDC; Ø8x18mm; ±20%; 2500h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: Ø8x18mm
Tolerance: ±20%
Leads: axial
Service life: 2500h
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
SMM02040D1331BB300 |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 1.33kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 1.33kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 1.33kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 1.33kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Produkt ist nicht verfügbar
SMM02040D1332BB300 |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 13.3kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 13.3kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 13.3kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 13.3kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Produkt ist nicht verfügbar
MOC8102-X009 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 73-117%@10mA
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: MOC8102
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 73-117%@10mA
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: MOC8102
Produkt ist nicht verfügbar
MOC8102-X017 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 73-117%@10mA
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: MOC8102
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 73-117%@10mA
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: MOC8102
Produkt ist nicht verfügbar
MOC8102-X017T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 73-117%@10mA
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: MOC8102
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 73-117%@10mA
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: MOC8102
Produkt ist nicht verfügbar
PR02000203009JA100 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 30Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 30Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 30Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 30Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Produkt ist nicht verfügbar
PR03000203009JAC00 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 30Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 30Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 30Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 30Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Produkt ist nicht verfügbar
T63YB502KT20 |
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Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 5kΩ; 250mW; ±10%; linear; T63YB
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 5kΩ
Power: 0.25W
Number of mechanical turns: 15 ±5
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T63YB
Body dimensions: 6.8x6.8x5mm
Potentiometer standard: 1/4"
Mounting: THT
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Number of electrical turns: 13 ±2
Track material: cermet
Terminal pitch: 2.5x2.5mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 1Ncm
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 5kΩ; 250mW; ±10%; linear; T63YB
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 5kΩ
Power: 0.25W
Number of mechanical turns: 15 ±5
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T63YB
Body dimensions: 6.8x6.8x5mm
Potentiometer standard: 1/4"
Mounting: THT
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Number of electrical turns: 13 ±2
Track material: cermet
Terminal pitch: 2.5x2.5mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 1Ncm
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.35 EUR |
18+ | 3.98 EUR |
32+ | 2.3 EUR |
33+ | 2.17 EUR |
IRFD9010PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -1.1A; Idm: -8.8A; 1W; HVMDIP
Case: HVMDIP
Mounting: THT
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8.8A
Drain-source voltage: -50V
Drain current: -1.1A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -1.1A; Idm: -8.8A; 1W; HVMDIP
Case: HVMDIP
Mounting: THT
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8.8A
Drain-source voltage: -50V
Drain current: -1.1A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Produkt ist nicht verfügbar
K154K20X7RF5TL2 |
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Hersteller: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 150nF; 50V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 0.15µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 150nF; 50V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 0.15µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
PR02000205102JA100 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 51kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 51kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 51kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 51kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
510+ | 0.14 EUR |
700+ | 0.1 EUR |
980+ | 0.073 EUR |
CRCW0805301KFKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 301kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 301kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 301kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 301kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.036 EUR |
3800+ | 0.019 EUR |
5000+ | 0.014 EUR |
MRS25000C1544FCT00 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 1.54MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Mounting: THT
Type of resistor: thin film
Power: 0.6W
Resistance: 1.54MΩ
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Category: THT Resistors
Description: Resistor: thin film; THT; 1.54MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Mounting: THT
Type of resistor: thin film
Power: 0.6W
Resistance: 1.54MΩ
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Produkt ist nicht verfügbar
BY527TAP |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 2A
Max. load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 16pF
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.65V
Leakage current: 10µA
Reverse recovery time: 4µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 2A
Max. load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 16pF
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.65V
Leakage current: 10µA
Reverse recovery time: 4µs
auf Bestellung 14310 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
166+ | 0.43 EUR |
175+ | 0.41 EUR |
228+ | 0.31 EUR |
241+ | 0.3 EUR |
5000+ | 0.29 EUR |
SUM80090E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 128A
Pulsed drain current: 240A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 128A
Pulsed drain current: 240A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SUP80090E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 74A
On-state resistance: 9.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Drain-source voltage: 150V
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 74A
On-state resistance: 9.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Drain-source voltage: 150V
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
SI6968BEDQ-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI6968BEDQ-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
VLMC3100-GS08 |
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Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; green; 0.71÷1.6mcd; 3.5x2.8x1.75mm; 120°
Type of diode: LED
Mounting: SMD
Case: 3528; PLCC2
LED colour: green
Luminosity: 0.71...1.6mcd
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 120°
LED current: 2mA
Wavelength: 562...575nm
Front: flat
Operating voltage: 1.9...2.4V
Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; green; 0.71÷1.6mcd; 3.5x2.8x1.75mm; 120°
Type of diode: LED
Mounting: SMD
Case: 3528; PLCC2
LED colour: green
Luminosity: 0.71...1.6mcd
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 120°
LED current: 2mA
Wavelength: 562...575nm
Front: flat
Operating voltage: 1.9...2.4V
auf Bestellung 6840 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
330+ | 0.22 EUR |
490+ | 0.15 EUR |
570+ | 0.13 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
VLMC3100-GS18 |
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Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; green; 0.71÷1.6mcd; 3.5x2.8x1.75mm; 60°; 2mA
Type of diode: LED
Mounting: SMD
Case: 3528; PLCC2
LED colour: green
Luminosity: 0.71...1.6mcd
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 60°
LED current: 2mA
Wavelength: 562...575nm
Front: flat
Operating voltage: 1.9...2.4V
Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; green; 0.71÷1.6mcd; 3.5x2.8x1.75mm; 60°; 2mA
Type of diode: LED
Mounting: SMD
Case: 3528; PLCC2
LED colour: green
Luminosity: 0.71...1.6mcd
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 60°
LED current: 2mA
Wavelength: 562...575nm
Front: flat
Operating voltage: 1.9...2.4V
auf Bestellung 4635 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
250+ | 0.29 EUR |
280+ | 0.26 EUR |
420+ | 0.17 EUR |
635+ | 0.11 EUR |
TZMB9V1-GS08 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
auf Bestellung 4580 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1590+ | 0.045 EUR |
1765+ | 0.041 EUR |
1995+ | 0.036 EUR |
2315+ | 0.031 EUR |
2440+ | 0.029 EUR |
TZMC9V1-GS08 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
auf Bestellung 5037 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1250+ | 0.057 EUR |
2370+ | 0.03 EUR |
2689+ | 0.027 EUR |
2911+ | 0.025 EUR |
3077+ | 0.023 EUR |
VLMT3100-GS08 |
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Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; red; 2.8÷11.2mcd; 3.5x2.8x1.75mm; 60°; 2mA
Type of diode: LED
Mounting: SMD
Case: 3528; PLCC2
LED colour: red
Luminosity: 2.8...11.2mcd
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 60°
LED current: 2mA
Wavelength: 612...625nm
Front: flat
Operating voltage: 2.2...2.9V
Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; red; 2.8÷11.2mcd; 3.5x2.8x1.75mm; 60°; 2mA
Type of diode: LED
Mounting: SMD
Case: 3528; PLCC2
LED colour: red
Luminosity: 2.8...11.2mcd
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 60°
LED current: 2mA
Wavelength: 612...625nm
Front: flat
Operating voltage: 2.2...2.9V
auf Bestellung 1080 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
265+ | 0.27 EUR |
305+ | 0.23 EUR |
420+ | 0.17 EUR |
645+ | 0.11 EUR |
SIHG25N40D-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 16A; Idm: 78A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 16A
Pulsed drain current: 78A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 16A; Idm: 78A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 16A
Pulsed drain current: 78A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHP25N40D-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 16A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 16A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 16A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 16A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 513 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.76 EUR |
22+ | 3.39 EUR |
28+ | 2.6 EUR |
30+ | 2.46 EUR |
SA70CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; reel,tape
Case: DO15
Mounting: THT
Breakdown voltage: 77.8...86V
Kind of package: reel; tape
Technology: TransZorb®
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; reel,tape
Case: DO15
Mounting: THT
Breakdown voltage: 77.8...86V
Kind of package: reel; tape
Technology: TransZorb®
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Produkt ist nicht verfügbar
SA70CA-E3/73 |
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Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; Ammo Pack
Case: DO15
Mounting: THT
Breakdown voltage: 77.8...86V
Kind of package: Ammo Pack
Technology: TransZorb®
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; Ammo Pack
Case: DO15
Mounting: THT
Breakdown voltage: 77.8...86V
Kind of package: Ammo Pack
Technology: TransZorb®
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Produkt ist nicht verfügbar
TSOP6133TR |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 33kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 33kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 33kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 33kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
auf Bestellung 5434 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
66+ | 1.09 EUR |
76+ | 0.95 EUR |
97+ | 0.74 EUR |
102+ | 0.7 EUR |
106+ | 0.68 EUR |
500+ | 0.67 EUR |
SMCJ36CA-E3/57T |
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Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 40V; 25.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 40V; 25.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
auf Bestellung 1796 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
175+ | 0.41 EUR |
194+ | 0.37 EUR |
256+ | 0.28 EUR |
270+ | 0.27 EUR |
SMCJ36CA-E3/9AT |
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Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 42.1V; 25.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 42.1V; 25.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
VJ0805A820GXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1800+ | 0.042 EUR |
2400+ | 0.03 EUR |
2800+ | 0.026 EUR |
VJ0805A820JXAAC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 2012
Tolerance: ±5%
Case - inch: 0805
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 2012
Tolerance: ±5%
Case - inch: 0805
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
Produkt ist nicht verfügbar
VJ0805A820JXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 5700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2200+ | 0.033 EUR |
3100+ | 0.023 EUR |
4900+ | 0.015 EUR |
5700+ | 0.013 EUR |
VJ0805A820JXCCW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 200V; C0G (NP0); ±5%; SMD; 0805
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 2012
Tolerance: ±5%
Case - inch: 0805
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 200V
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 200V; C0G (NP0); ±5%; SMD; 0805
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 2012
Tolerance: ±5%
Case - inch: 0805
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 200V
Produkt ist nicht verfügbar
VJ0805L820GXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; ±2%; SMD; 0805
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 2012
Tolerance: ±2%
Case - inch: 0805
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; ±2%; SMD; 0805
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 2012
Tolerance: ±2%
Case - inch: 0805
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Produkt ist nicht verfügbar
SML4741A-E3/61 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
P6SMB11A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB11A-E3/5B |
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Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB11A-M3/52 |
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Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB11A-M3/5B |
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Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
BYX86TAP |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ammo Pack; Ifsm: 50A; SOD57; Ir: 25uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1V
Leakage current: 25µA
Reverse recovery time: 4µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ammo Pack; Ifsm: 50A; SOD57; Ir: 25uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1V
Leakage current: 25µA
Reverse recovery time: 4µs
Produkt ist nicht verfügbar
SMBJ22CA-E3/52 |
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Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 16.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 19.9V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 16.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 19.9V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
SMBJ22CD-M3/H |
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Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.8V; 17.1A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.8V
Max. forward impulse current: 17.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.8V; 17.1A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.8V
Max. forward impulse current: 17.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 702 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
281+ | 0.25 EUR |
589+ | 0.12 EUR |
667+ | 0.11 EUR |
702+ | 0.1 EUR |
SIJ438DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 200A
Power dissipation: 69.4W
On-state resistance: 1.75mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 200A
Power dissipation: 69.4W
On-state resistance: 1.75mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIR104DP-T1-RE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIR120DP-T1-RE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIR170DP-T1-RE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SiR668DP-T1-RE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIR670DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar