Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF530STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF9520STRRPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CRCW0805220KFKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 220kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
auf Bestellung 6723 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805220KFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; CRCW0805 Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 220kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Manufacturer series: CRCW0805 Operating temperature: -55...155°C Mounting: SMD |
auf Bestellung 13999 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805220KJNEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; -55÷155°C Type of resistor: thick film Operating temperature: -55...155°C Power: 0.125W Resistance: 220kΩ Tolerance: ±5% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD |
auf Bestellung 4505 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805220KJNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; CRCW0805 Type of resistor: thick film Operating temperature: -55...155°C Power: 0.125W Resistance: 220kΩ Tolerance: ±5% Max. operating voltage: 150V Manufacturer series: CRCW0805 Case - mm: 2012 Case - inch: 0805 Mounting: SMD |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740ALPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 36nC Kind of package: tube |
auf Bestellung 974 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740ASTRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 36nC Kind of package: reel; tape |
auf Bestellung 793 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740PBF-BE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 63nC Kind of package: tube |
auf Bestellung 902 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFZ44RPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFZ44SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFZ44STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SI4463BDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.8A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SI4463CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -18.6A Pulsed drain current: -60A Power dissipation: 5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 14mΩ Mounting: SMD Gate charge: 162nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2194 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCLE100E3333JB0 | VISHAY |
![]() Description: NTC thermistor; 33kΩ; THT; 4090K; -40÷125°C; 500mW Mounting: THT Resistance: 33kΩ Power: 0.5W Operating temperature: -40...125°C Type of sensor: NTC thermistor Material constant B: 4090K |
auf Bestellung 904 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805Y683KXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 68nF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 68nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 1925 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ10PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 40A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFZ20PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 15A; Idm: 60A; 40W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 15A Pulsed drain current: 60A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFZ24PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 552 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ40PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFZ48PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFZ48RSPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFZ48SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFZ48STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BFC238310684 | VISHAY |
![]() Description: Capacitor: polypropylene; 680nF; 400VDC; 200VAC; 31x23x13mm; THT Mounting: THT Lead length: 3.5mm Terminal pitch: 27.5mm Tolerance: ±5% Body dimensions: 31x23x13mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 0.68µF Operating voltage: 200V AC; 400V DC Climate class: 55/110/56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BFC238320684 | VISHAY |
![]() Description: Capacitor: polypropylene; 680nF; 630VDC; 220VAC; 31x25x15mm; THT Mounting: THT Lead length: 3.5mm Terminal pitch: 27.5mm Tolerance: ±5% Body dimensions: 31x25x15mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 0.68µF Operating voltage: 220V AC; 630V DC Climate class: 55/110/56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BFC238330104 | VISHAY |
![]() Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT Type of capacitor: polypropylene Capacitance: 0.1µF Operating voltage: 350V AC; 1kV DC Body dimensions: 26x19.5x10mm Mounting: THT Tolerance: ±5% Terminal pitch: 22.5mm Climate class: 55/110/56 Leads: 2pin |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BFC238330153 | VISHAY |
![]() Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT Type of capacitor: polypropylene Capacitance: 15nF Operating voltage: 350V AC; 1kV DC Tolerance: ±5% Mounting: THT Lead length: 3.5mm Terminal pitch: 15mm Body dimensions: 17.5x11x5mm Leads: 2pin Climate class: 55/110/56 |
auf Bestellung 351 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC238331104 | VISHAY |
![]() Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT Mounting: THT Terminal pitch: 22.5mm Tolerance: ±5% Body dimensions: 26x19.5x10mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 0.1µF Operating voltage: 350V AC; 1kV DC Climate class: 55/110/56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BFC238342222 | VISHAY |
![]() Description: Capacitor: polypropylene; 2.2nF; 1.4kVDC; 500VAC; 17.5x11x5mm; THT Mounting: THT Terminal pitch: 15mm Tolerance: ±5% Body dimensions: 17.5x11x5mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 2.2nF Operating voltage: 500V AC; 1.4kV DC Climate class: 55/110/56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BFC238370222 | VISHAY |
![]() Description: Capacitor: polypropylene; 2.2nF; 2.5kVDC; 900VAC; 26x15.5x6mm; THT Mounting: THT Terminal pitch: 22.5mm Tolerance: ±5% Body dimensions: 26x15.5x6mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 2.2nF Operating voltage: 900V AC; 2.5kV DC Climate class: 55/110/56 |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC238370333 | VISHAY |
![]() Description: Capacitor: polypropylene; 33nF; 2.5kVDC; 900VAC; 31x23x13mm; THT Mounting: THT Terminal pitch: 27.5mm Tolerance: ±5% Body dimensions: 31x23x13mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 33nF Operating voltage: 900V AC; 2.5kV DC Climate class: 55/110/56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRL540SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRL540STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZG05C4V7-M3-08 | VISHAY |
![]() Description: Diode: Zener; 3W; 4.7V; 45mA; SMD; 7 inch reel; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 4.7V Kind of package: 7 inch reel Case: SMA Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode Manufacturer series: BZG05C-M Zener current: 45mA Quantity in set/package: 1500pcs. |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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BZG05C5V1-M3-08 | VISHAY |
![]() Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: 7 inch reel Case: SMA Semiconductor structure: single diode Quantity in set/package: 1500pcs. Manufacturer series: BZG05C-M |
auf Bestellung 1980 Stücke: Lieferzeit 14-21 Tag (e) |
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TS53YJ103MR10 | VISHAY |
![]() Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20% Resistance: 10kΩ Power: 0.25W Tolerance: ±20% Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C IP rating: IP67 Leads: YJ Type of potentiometer: mounting Characteristics: linear Mechanical rotation angle: 270 ±10° Electrical rotation angle: 220 ±15° Torque: 1,5Ncm Track material: cermet Kind of potentiometer: single turn Mounting: SMD Temperature coefficient: 100ppm/°C Max. operating voltage: 200V |
auf Bestellung 634 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12061M00FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 1MΩ Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Max. operating voltage: 200V |
auf Bestellung 74800 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12061M00JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 1MΩ Power: 0.25W Tolerance: ±5% Operating temperature: -55...155°C Max. operating voltage: 200V |
auf Bestellung 19600 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE82CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
auf Bestellung 769 Stücke: Lieferzeit 14-21 Tag (e) |
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GRC00DD1021CTNL | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 16V DC Terminal pitch: 5mm Tolerance: ±20% Operating temperature: -40...105°C Dimensions: 10x16mm Service life: 2000h |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRFP21N60LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 84A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFP22N60KPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 88A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFP26N60LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 470W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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GBU4A-E3/45 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 791 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU4A-E3/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 397 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Mounting: SMD Kind of package: reel; tape Case: D2PAK; TO263 Drain-source voltage: 100V Drain current: 28A On-state resistance: 77mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 72nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF540STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Mounting: SMD Kind of package: reel; tape Case: D2PAK; TO263 Drain-source voltage: 100V Drain current: 28A On-state resistance: 77mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 72nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
VJ0201G104KXJCW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 16V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0201 Case - mm: 0603 Operating temperature: -55...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AC03000001007JAC00 | VISHAY |
![]() Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm Type of resistor: wire-wound Mounting: THT Resistance: 0.1Ω Power: 3W Tolerance: ±5% Operating temperature: -50...250°C Temperature coefficient: 80ppm/°C Resistor features: non-flammable Body dimensions: Ø4.8x13mm Leads dimensions: Ø0.8x25mm Leads: axial |
auf Bestellung 1491 Stücke: Lieferzeit 14-21 Tag (e) |
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GSC00AF2211VARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 8x10mm Nominal life: 2000h Manufacturer series: GSC Height: 10mm |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9220PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9220TRPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1670 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603A151JXBAC | VISHAY |
![]() Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 10500 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1111D100JXRAJ | VISHAY |
![]() Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 1.5kV Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1111 Case - mm: 3028 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX55C3V0-TAP | VISHAY |
![]() Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 19926 Stücke: Lieferzeit 14-21 Tag (e) |
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WSL2512R3300FEA | VISHAY |
![]() Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.33Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
auf Bestellung 1991 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF510STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF830ALPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 954 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF530STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9520STRRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CRCW0805220KFKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 220kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 220kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 6723 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
1471+ | 0.05 EUR |
1938+ | 0.04 EUR |
2203+ | 0.03 EUR |
2959+ | 0.02 EUR |
4099+ | 0.02 EUR |
4348+ | 0.02 EUR |
CRCW0805220KFKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 220kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Manufacturer series: CRCW0805
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 220kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Manufacturer series: CRCW0805
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 13999 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.03 EUR |
6500+ | 0.01 EUR |
8200+ | 0.01 EUR |
CRCW0805220KJNEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Resistance: 220kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Resistance: 220kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
auf Bestellung 4505 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
2778+ | 0.03 EUR |
3847+ | 0.02 EUR |
4386+ | 0.02 EUR |
CRCW0805220KJNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; CRCW0805
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Resistance: 220kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Manufacturer series: CRCW0805
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; CRCW0805
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Resistance: 220kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Manufacturer series: CRCW0805
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2700+ | 0.03 EUR |
3500+ | 0.02 EUR |
IRF740ALPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
auf Bestellung 974 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.14 EUR |
38+ | 1.93 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
IRF740ASTRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: reel; tape
auf Bestellung 793 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.15 EUR |
27+ | 2.72 EUR |
60+ | 1.20 EUR |
64+ | 1.13 EUR |
IRF740PBF-BE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
auf Bestellung 902 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.52 EUR |
55+ | 1.30 EUR |
59+ | 1.23 EUR |
62+ | 1.16 EUR |
100+ | 1.13 EUR |
500+ | 1.12 EUR |
IRF740STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ44RPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ44SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ44STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI4463BDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.8A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.8A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI4463CDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18.6A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18.6A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.40 EUR |
73+ | 0.98 EUR |
109+ | 0.66 EUR |
116+ | 0.62 EUR |
500+ | 0.60 EUR |
NTCLE100E3333JB0 |
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Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 33kΩ; THT; 4090K; -40÷125°C; 500mW
Mounting: THT
Resistance: 33kΩ
Power: 0.5W
Operating temperature: -40...125°C
Type of sensor: NTC thermistor
Material constant B: 4090K
Category: THT measurement NTC thermistors
Description: NTC thermistor; 33kΩ; THT; 4090K; -40÷125°C; 500mW
Mounting: THT
Resistance: 33kΩ
Power: 0.5W
Operating temperature: -40...125°C
Type of sensor: NTC thermistor
Material constant B: 4090K
auf Bestellung 904 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.02 EUR |
81+ | 0.89 EUR |
162+ | 0.44 EUR |
171+ | 0.42 EUR |
VJ0805Y683KXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 68nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 68nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 68nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 68nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
834+ | 0.09 EUR |
1153+ | 0.06 EUR |
1323+ | 0.05 EUR |
1806+ | 0.04 EUR |
1925+ | 0.04 EUR |
IRFZ10PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ20PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 15A; Idm: 60A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 15A; Idm: 60A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ24PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.86 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
IRFZ40PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ48PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ48RSPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ48SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ48STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC238310684 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 400VDC; 200VAC; 31x23x13mm; THT
Mounting: THT
Lead length: 3.5mm
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x23x13mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 0.68µF
Operating voltage: 200V AC; 400V DC
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 400VDC; 200VAC; 31x23x13mm; THT
Mounting: THT
Lead length: 3.5mm
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x23x13mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 0.68µF
Operating voltage: 200V AC; 400V DC
Climate class: 55/110/56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC238320684 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 220VAC; 31x25x15mm; THT
Mounting: THT
Lead length: 3.5mm
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x25x15mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 0.68µF
Operating voltage: 220V AC; 630V DC
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 220VAC; 31x25x15mm; THT
Mounting: THT
Lead length: 3.5mm
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x25x15mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 0.68µF
Operating voltage: 220V AC; 630V DC
Climate class: 55/110/56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC238330104 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Body dimensions: 26x19.5x10mm
Mounting: THT
Tolerance: ±5%
Terminal pitch: 22.5mm
Climate class: 55/110/56
Leads: 2pin
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Body dimensions: 26x19.5x10mm
Mounting: THT
Tolerance: ±5%
Terminal pitch: 22.5mm
Climate class: 55/110/56
Leads: 2pin
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC238330153 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Type of capacitor: polypropylene
Capacitance: 15nF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Lead length: 3.5mm
Terminal pitch: 15mm
Body dimensions: 17.5x11x5mm
Leads: 2pin
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Type of capacitor: polypropylene
Capacitance: 15nF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Lead length: 3.5mm
Terminal pitch: 15mm
Body dimensions: 17.5x11x5mm
Leads: 2pin
Climate class: 55/110/56
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.07 EUR |
50+ | 1.43 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
BFC238331104 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Terminal pitch: 22.5mm
Tolerance: ±5%
Body dimensions: 26x19.5x10mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Terminal pitch: 22.5mm
Tolerance: ±5%
Body dimensions: 26x19.5x10mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Climate class: 55/110/56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC238342222 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 1.4kVDC; 500VAC; 17.5x11x5mm; THT
Mounting: THT
Terminal pitch: 15mm
Tolerance: ±5%
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 500V AC; 1.4kV DC
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 1.4kVDC; 500VAC; 17.5x11x5mm; THT
Mounting: THT
Terminal pitch: 15mm
Tolerance: ±5%
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 500V AC; 1.4kV DC
Climate class: 55/110/56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC238370222 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 2.5kVDC; 900VAC; 26x15.5x6mm; THT
Mounting: THT
Terminal pitch: 22.5mm
Tolerance: ±5%
Body dimensions: 26x15.5x6mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 2.5kVDC; 900VAC; 26x15.5x6mm; THT
Mounting: THT
Terminal pitch: 22.5mm
Tolerance: ±5%
Body dimensions: 26x15.5x6mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
50+ | 1.43 EUR |
72+ | 1.00 EUR |
76+ | 0.94 EUR |
BFC238370333 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 2.5kVDC; 900VAC; 31x23x13mm; THT
Mounting: THT
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x23x13mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 33nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 2.5kVDC; 900VAC; 31x23x13mm; THT
Mounting: THT
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x23x13mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 33nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZG05C4V7-M3-08 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; 45mA; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: 7 inch reel
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Manufacturer series: BZG05C-M
Zener current: 45mA
Quantity in set/package: 1500pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; 45mA; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: 7 inch reel
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Manufacturer series: BZG05C-M
Zener current: 45mA
Quantity in set/package: 1500pcs.
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
115+ | 0.61 EUR |
BZG05C5V1-M3-08 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: 7 inch reel
Case: SMA
Semiconductor structure: single diode
Quantity in set/package: 1500pcs.
Manufacturer series: BZG05C-M
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: 7 inch reel
Case: SMA
Semiconductor structure: single diode
Quantity in set/package: 1500pcs.
Manufacturer series: BZG05C-M
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
211+ | 0.34 EUR |
300+ | 0.24 EUR |
491+ | 0.15 EUR |
521+ | 0.14 EUR |
TS53YJ103MR10 |
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Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
auf Bestellung 634 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.00 EUR |
24+ | 2.99 EUR |
45+ | 1.62 EUR |
47+ | 1.53 EUR |
500+ | 1.47 EUR |
CRCW12061M00FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 200V
auf Bestellung 74800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2400+ | 0.03 EUR |
5300+ | 0.01 EUR |
7500+ | 0.01 EUR |
17300+ | 0.00 EUR |
18300+ | 0.00 EUR |
CRCW12061M00JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Max. operating voltage: 200V
auf Bestellung 19600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2200+ | 0.03 EUR |
5200+ | 0.01 EUR |
6600+ | 0.01 EUR |
14200+ | 0.01 EUR |
15100+ | 0.00 EUR |
15300+ | 0.00 EUR |
1.5KE82CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
163+ | 0.44 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
500+ | 0.32 EUR |
GRC00DD1021CTNL |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP21N60LPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP22N60KPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP26N60LPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GBU4A-E3/45 |
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Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.30 EUR |
61+ | 1.17 EUR |
77+ | 0.93 EUR |
82+ | 0.88 EUR |
GBU4A-E3/51 |
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Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.60 EUR |
37+ | 1.94 EUR |
85+ | 0.84 EUR |
90+ | 0.80 EUR |
IRF540STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 100V
Drain current: 28A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 100V
Drain current: 28A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF540STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 100V
Drain current: 28A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 100V
Drain current: 28A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VJ0201G104KXJCW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AC03000001007JAC00 |
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Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Leads: axial
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Leads: axial
auf Bestellung 1491 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
143+ | 0.50 EUR |
177+ | 0.41 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
GSC00AF2211VARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Nominal life: 2000h
Manufacturer series: GSC
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Nominal life: 2000h
Manufacturer series: GSC
Height: 10mm
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
210+ | 0.35 EUR |
330+ | 0.22 EUR |
430+ | 0.17 EUR |
440+ | 0.16 EUR |
IRFR9220PBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
77+ | 0.93 EUR |
130+ | 0.55 EUR |
137+ | 0.52 EUR |
IRFR9220TRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1670 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
60+ | 1.20 EUR |
141+ | 0.51 EUR |
150+ | 0.48 EUR |
VJ0603A151JXBAC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
538+ | 0.13 EUR |
703+ | 0.10 EUR |
781+ | 0.09 EUR |
1568+ | 0.05 EUR |
1656+ | 0.04 EUR |
VJ1111D100JXRAJ |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX55C3V0-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 19926 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
606+ | 0.12 EUR |
910+ | 0.08 EUR |
1087+ | 0.07 EUR |
1629+ | 0.04 EUR |
2874+ | 0.03 EUR |
3031+ | 0.02 EUR |
WSL2512R3300FEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
179+ | 0.40 EUR |
192+ | 0.37 EUR |
332+ | 0.22 EUR |
353+ | 0.20 EUR |
IRF510STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF830ALPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
54+ | 1.34 EUR |
66+ | 1.09 EUR |
70+ | 1.03 EUR |