Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFR9024TRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFR1N60ATRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFR1N60ATRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFU1N60APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Power dissipation: 36W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SIHFR1N60A-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHFR1N60ATRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SI7850ADP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 35.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SI7850DP-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 10.3A On-state resistance: 31mΩ Type of transistor: N-MOSFET Power dissipation: 4.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SI7806ADN-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SI7806ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFI740GLCPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 23A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRLR014PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 8.4nC On-state resistance: 0.28Ω Gate-source voltage: ±10V Pulsed drain current: 31A |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR014TRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 8.4nC On-state resistance: 0.28Ω Gate-source voltage: ±10V Pulsed drain current: 31A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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VJ1206A102JXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206 Operating temperature: -55...125°C Tolerance: ±5% Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 1nF Operating voltage: 50V Kind of capacitor: MLCC Case - mm: 3216 Case - inch: 1206 Mounting: SMD |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
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K827PH | VISHAY |
![]() Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8 Case: DIP8 Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 5µs Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@60mA Type of optocoupler: optocoupler Mounting: THT |
auf Bestellung 444 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805620KJNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C Operating temperature: -55...155°C Type of resistor: thick film Power: 0.125W Resistance: 620kΩ Tolerance: ±5% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805620RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C Operating temperature: -55...155°C Type of resistor: thick film Power: 0.125W Resistance: 620Ω Tolerance: ±1% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD |
auf Bestellung 10500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9610SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF9610STRRPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF9630STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Pulsed drain current: -26A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF9640LPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 44nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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M43P203KB40 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear Resistance: 20kΩ Power: 0.75W Tolerance: ±10% IP rating: IP67 Type of potentiometer: mounting Number of electrical turns: 15 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Potentiometer standard: 19mm Mounting: THT Min. insulation resistance: 1GΩ Terminal pitch: 12.7x2.54mm Operating temperature: -55...125°C Body dimensions: 19x6.4x4.8mm |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z24STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.7A Pulsed drain current: -44A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Gate charge: 19nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX85C20-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 20V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
auf Bestellung 20084 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C68-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 68V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 23180 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0402G104KXQCW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 10V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...85°C |
auf Bestellung 10158 Stücke: Lieferzeit 14-21 Tag (e) |
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GSC00AH2220JARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 2.2mF; 6.3VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 2.2mF Operating voltage: 6.3V DC Tolerance: ±20% Operating temperature: -55...105°C Manufacturer series: GSC Nominal life: 2000h Dimensions: 12.5x13.5mm Height: 13.5mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFP350LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 64A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MCT06030C1008FP500 | VISHAY |
![]() Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C Type of resistor: thin film Mounting: SMD Resistance: 1Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...125°C; -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Version: 0 Manufacturer series: MCT0603 Case - mm: 1608 Case - inch: 0603 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF630STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF630STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF720SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.1A Pulsed drain current: 13A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 20nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTCS0805E3334JHT | VISHAY |
![]() Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 0.33MΩ Operating temperature: -40...150°C Power: 0.21W Tolerance: ±5% Mounting: SMD Material constant B: 3930K Case - inch: 0805 |
auf Bestellung 2418 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0805E3474FXT | VISHAY |
![]() Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 470kΩ Operating temperature: -40...150°C Power: 0.21W Tolerance: ±1% Mounting: SMD Material constant B: 4025K Case - inch: 0805 |
auf Bestellung 1657 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR024PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRLR024TRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRLR024TRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MAL215097601E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20% Type of capacitor: electrolytic Mounting: SMD Operating temperature: -55...105°C Capacitance: 330µF Operating voltage: 25V DC Body dimensions: 10x10x10mm Tolerance: ±20% |
auf Bestellung 868 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE39A-E3/73 | VISHAY |
![]() Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: 7 inch reel Features of semiconductor devices: glass passivated Manufacturer series: P6KE Technology: TransZorb® |
auf Bestellung 2259 Stücke: Lieferzeit 14-21 Tag (e) |
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PR02000201009JN300 | VISHAY |
![]() Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 10Ω Power: 2W Tolerance: ±5% Max. operating voltage: 500V Temperature coefficient: 250ppm/°C Resistor features: high power and small dimension Leads: axial Body dimensions: Ø3.9x12mm |
auf Bestellung 2410 Stücke: Lieferzeit 14-21 Tag (e) |
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PR02000201009JA100 | VISHAY |
![]() Description: Resistor: metal film; THT; 10Ω; 2W; ±5%; Ø3.9x10mm; 250ppm/°C; axial Type of resistor: metal film Mounting: THT Resistance: 10Ω Power: 2W Tolerance: ±5% Temperature coefficient: 250ppm/°C Leads: axial Body dimensions: Ø3.9x10mm Max. operating voltage: 500V Resistor features: high power and small dimension |
auf Bestellung 1956 Stücke: Lieferzeit 14-21 Tag (e) |
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TCMT1600 | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V Case: Mini-flat 4pin Type of optocoupler: optocoupler Mounting: SMD Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 80-300%@5mA |
auf Bestellung 4904 Stücke: Lieferzeit 14-21 Tag (e) |
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TS63Y102KT20 | VISHAY |
![]() Description: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD Resistance: 1kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.85x6.85x5mm Operating temperature: -55...155°C IP rating: IP67 Type of potentiometer: mounting Number of mechanical turns: 15 ±5 Number of electrical turns: 13 ±2 Characteristics: linear Torque: 1,5Ncm Track material: cermet Kind of potentiometer: horizontal; multiturn Mounting: SMD Temperature coefficient: 100ppm/°C Max. operating voltage: 250V |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120624R9FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 24.9Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Resistance: 24.9Ω Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Case - mm: 3216 Case - inch: 1206 Mounting: SMD Max. operating voltage: 200V |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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WSL2512R1000FEA | VISHAY |
![]() Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.1Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
auf Bestellung 4303 Stücke: Lieferzeit 14-21 Tag (e) |
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WSL2512R1500FEA | VISHAY |
![]() Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.15Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
auf Bestellung 1230 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY17-3X009T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 5µs Turn-off time: 4.3µs Manufacturer series: CNY17 |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233620473 | VISHAY |
![]() Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm Mounting: THT Tolerance: ±20% Type of capacitor: polypropylene Leads: 2pin Capacitance: 47nF Operating voltage: 310V AC; 630V DC Climate class: 55/105/56 Lead length: 3.5mm Kind of capacitor: X2 Terminal pitch: 15mm Body dimensions: 5x11x17.5mm |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLZ34PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Power dissipation: 88W Case: TO220AB Mounting: THT Kind of channel: enhancement Gate charge: 35nC Kind of package: tube On-state resistance: 70mΩ Gate-source voltage: ±10V Pulsed drain current: 110A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SIHP10N40D-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 23A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TEMT6200FX01 | VISHAY |
![]() Description: Phototransistor; 0805; SMD; λp max: 550nm; 6V; 60°; Lens: green Type of photoelement: phototransistor Mounting: SMD Wavelength of peak sensitivity: 550nm Wavelength: 450...610nm Viewing angle: 60° LED lens: green Collector-emitter voltage: 6V Case: 0805 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BFC233868418 | VISHAY |
![]() Description: Capacitor: polypropylene; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm Tolerance: ±20% Type of capacitor: polypropylene Capacitance: 1nF Operating voltage: 300V AC; 1kV DC Body dimensions: 12.5x4x10mm Mounting: THT Terminal pitch: 10mm |
auf Bestellung 2140 Stücke: Lieferzeit 14-21 Tag (e) |
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TDCG1060M | VISHAY |
![]() Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd Operating voltage: 2...2.4V Mounting: THT Common electrode: cathode Operating current: 20mA Wavelength: 562...575nm Luminosity: 2.8...4mcd Kind of display: 7-segment Digit height: 10mm; 0.39" Type of display: LED Dimensions: 40.2x12.8x7mm Number of characters: 4 Colour: green |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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T18105KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear Resistance: 1MΩ Power: 0.75W Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 Potentiometer standard: 19mm Mounting: THT Min. insulation resistance: 1TΩ Operating temperature: -55...125°C |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YB105KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 1MΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YB Track material: cermet Operating temperature: -55...125°C Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1,5Ncm |
auf Bestellung 306 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFRC20PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1802 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301BDS-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -10A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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VJ0603A331GXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 330pF; 50V; C0G (NP0); ±2%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.33nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 3650 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFDC20PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.32A Pulsed drain current: 2.6A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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GRC00KK1022A00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 100V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 18x40mm |
auf Bestellung 333 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9024TRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR1N60ATRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR1N60ATRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFU1N60APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHFR1N60A-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
89+ | 0.80 EUR |
SIHFR1N60ATRL-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7850ADP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 35.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 35.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7850DP-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7806ADN-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7806ADN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFI740GLCPBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR014PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
138+ | 0.52 EUR |
151+ | 0.47 EUR |
IRLR014TRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VJ1206A102JXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Tolerance: ±5%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 1nF
Operating voltage: 50V
Kind of capacitor: MLCC
Case - mm: 3216
Case - inch: 1206
Mounting: SMD
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Tolerance: ±5%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 1nF
Operating voltage: 50V
Kind of capacitor: MLCC
Case - mm: 3216
Case - inch: 1206
Mounting: SMD
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.30 EUR |
410+ | 0.17 EUR |
569+ | 0.13 EUR |
649+ | 0.11 EUR |
2128+ | 0.03 EUR |
2253+ | 0.03 EUR |
K827PH |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Case: DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Case: DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
107+ | 0.67 EUR |
115+ | 0.63 EUR |
180+ | 0.40 EUR |
191+ | 0.38 EUR |
CRCW0805620KJNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2300+ | 0.03 EUR |
3500+ | 0.02 EUR |
CRCW0805620RFKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620Ω
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620Ω
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2200+ | 0.03 EUR |
4000+ | 0.02 EUR |
6500+ | 0.01 EUR |
10500+ | 0.01 EUR |
IRF9610SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF9610STRRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9630STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF9640LPBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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M43P203KB40 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard: 19mm
Mounting: THT
Min. insulation resistance: 1GΩ
Terminal pitch: 12.7x2.54mm
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard: 19mm
Mounting: THT
Min. insulation resistance: 1GΩ
Terminal pitch: 12.7x2.54mm
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.53 EUR |
25+ | 2.95 EUR |
26+ | 2.79 EUR |
IRF9Z24STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX85C20-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 20084 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
432+ | 0.17 EUR |
618+ | 0.12 EUR |
724+ | 0.10 EUR |
1235+ | 0.06 EUR |
1306+ | 0.06 EUR |
BZX85C68-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 23180 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
490+ | 0.15 EUR |
980+ | 0.07 EUR |
1100+ | 0.07 EUR |
1240+ | 0.06 EUR |
1310+ | 0.06 EUR |
5000+ | 0.05 EUR |
VJ0402G104KXQCW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
auf Bestellung 10158 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5051+ | 0.01 EUR |
8929+ | 0.01 EUR |
10158+ | 0.01 EUR |
GSC00AH2220JARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2mF; 6.3VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 12.5x13.5mm
Height: 13.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2mF; 6.3VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 12.5x13.5mm
Height: 13.5mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP350LCPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MCT06030C1008FP500 |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
Case - mm: 1608
Case - inch: 0603
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
Case - mm: 1608
Case - inch: 0603
Produkt ist nicht verfügbar
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IRF630STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF720SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTCS0805E3334JHT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 0.33MΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±5%
Mounting: SMD
Material constant B: 3930K
Case - inch: 0805
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 0.33MΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±5%
Mounting: SMD
Material constant B: 3930K
Case - inch: 0805
auf Bestellung 2418 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
313+ | 0.23 EUR |
343+ | 0.21 EUR |
353+ | 0.20 EUR |
NTCS0805E3474FXT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
auf Bestellung 1657 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
133+ | 0.54 EUR |
168+ | 0.43 EUR |
178+ | 0.40 EUR |
1000+ | 0.39 EUR |
IRLR024PBF | ![]() |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR024TRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR024TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MAL215097601E3 |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
auf Bestellung 868 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.67 EUR |
38+ | 1.89 EUR |
75+ | 0.96 EUR |
80+ | 0.90 EUR |
P6KE39A-E3/73 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Technology: TransZorb®
auf Bestellung 2259 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
244+ | 0.29 EUR |
410+ | 0.17 EUR |
435+ | 0.16 EUR |
PR02000201009JN300 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 10Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Temperature coefficient: 250ppm/°C
Resistor features: high power and small dimension
Leads: axial
Body dimensions: Ø3.9x12mm
Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 10Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Temperature coefficient: 250ppm/°C
Resistor features: high power and small dimension
Leads: axial
Body dimensions: Ø3.9x12mm
auf Bestellung 2410 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
300+ | 0.24 EUR |
500+ | 0.14 EUR |
550+ | 0.13 EUR |
PR02000201009JA100 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 10Ω; 2W; ±5%; Ø3.9x10mm; 250ppm/°C; axial
Type of resistor: metal film
Mounting: THT
Resistance: 10Ω
Power: 2W
Tolerance: ±5%
Temperature coefficient: 250ppm/°C
Leads: axial
Body dimensions: Ø3.9x10mm
Max. operating voltage: 500V
Resistor features: high power and small dimension
Category: THT Resistors
Description: Resistor: metal film; THT; 10Ω; 2W; ±5%; Ø3.9x10mm; 250ppm/°C; axial
Type of resistor: metal film
Mounting: THT
Resistance: 10Ω
Power: 2W
Tolerance: ±5%
Temperature coefficient: 250ppm/°C
Leads: axial
Body dimensions: Ø3.9x10mm
Max. operating voltage: 500V
Resistor features: high power and small dimension
auf Bestellung 1956 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
278+ | 0.26 EUR |
355+ | 0.20 EUR |
424+ | 0.17 EUR |
504+ | 0.14 EUR |
1299+ | 0.06 EUR |
1374+ | 0.05 EUR |
TCMT1600 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-300%@5mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-300%@5mA
auf Bestellung 4904 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.80 EUR |
135+ | 0.53 EUR |
167+ | 0.43 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
TS63Y102KT20 |
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Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.85x6.85x5mm
Operating temperature: -55...155°C
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: horizontal; multiturn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.85x6.85x5mm
Operating temperature: -55...155°C
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: horizontal; multiturn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.05 EUR |
25+ | 2.89 EUR |
27+ | 2.73 EUR |
CRCW120624R9FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 24.9Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 24.9Ω
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Case - mm: 3216
Case - inch: 1206
Mounting: SMD
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 24.9Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 24.9Ω
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Case - mm: 3216
Case - inch: 1206
Mounting: SMD
Max. operating voltage: 200V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1800+ | 0.04 EUR |
2500+ | 0.03 EUR |
WSL2512R1000FEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 4303 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
177+ | 0.41 EUR |
246+ | 0.29 EUR |
379+ | 0.19 EUR |
400+ | 0.18 EUR |
WSL2512R1500FEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.15Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.15Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 1230 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
170+ | 0.42 EUR |
278+ | 0.26 EUR |
293+ | 0.24 EUR |
CNY17-3X009T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
114+ | 0.63 EUR |
134+ | 0.53 EUR |
153+ | 0.47 EUR |
248+ | 0.29 EUR |
262+ | 0.27 EUR |
BFC233620473 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Mounting: THT
Tolerance: ±20%
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Climate class: 55/105/56
Lead length: 3.5mm
Kind of capacitor: X2
Terminal pitch: 15mm
Body dimensions: 5x11x17.5mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Mounting: THT
Tolerance: ±20%
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Climate class: 55/105/56
Lead length: 3.5mm
Kind of capacitor: X2
Terminal pitch: 15mm
Body dimensions: 5x11x17.5mm
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.90 EUR |
IRLZ34PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate charge: 35nC
Kind of package: tube
On-state resistance: 70mΩ
Gate-source voltage: ±10V
Pulsed drain current: 110A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate charge: 35nC
Kind of package: tube
On-state resistance: 70mΩ
Gate-source voltage: ±10V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHP10N40D-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 23A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 23A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TEMT6200FX01 |
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Hersteller: VISHAY
Category: Phototransistors
Description: Phototransistor; 0805; SMD; λp max: 550nm; 6V; 60°; Lens: green
Type of photoelement: phototransistor
Mounting: SMD
Wavelength of peak sensitivity: 550nm
Wavelength: 450...610nm
Viewing angle: 60°
LED lens: green
Collector-emitter voltage: 6V
Case: 0805
Category: Phototransistors
Description: Phototransistor; 0805; SMD; λp max: 550nm; 6V; 60°; Lens: green
Type of photoelement: phototransistor
Mounting: SMD
Wavelength of peak sensitivity: 550nm
Wavelength: 450...610nm
Viewing angle: 60°
LED lens: green
Collector-emitter voltage: 6V
Case: 0805
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC233868418 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x4x10mm
Mounting: THT
Terminal pitch: 10mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x4x10mm
Mounting: THT
Terminal pitch: 10mm
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
183+ | 0.39 EUR |
1400+ | 0.38 EUR |
TDCG1060M |
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Hersteller: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Operating current: 20mA
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Type of display: LED
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Colour: green
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Operating current: 20mA
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Type of display: LED
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Colour: green
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.25 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
T18105KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Potentiometer standard: 19mm
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Potentiometer standard: 19mm
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.05 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
T93YB105KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 1MΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 1MΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.72 EUR |
44+ | 1.64 EUR |
61+ | 1.17 EUR |
65+ | 1.12 EUR |
IRFRC20PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1802 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
77+ | 0.94 EUR |
85+ | 0.85 EUR |
130+ | 0.55 EUR |
137+ | 0.52 EUR |
SI2301BDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VJ0603A331GXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 330pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.33nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 330pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.33nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3650 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
589+ | 0.12 EUR |
1352+ | 0.05 EUR |
1713+ | 0.04 EUR |
1866+ | 0.04 EUR |
3650+ | 0.02 EUR |
IRFDC20PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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GRC00KK1022A00L |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
auf Bestellung 333 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.29 EUR |
42+ | 1.73 EUR |
62+ | 1.16 EUR |
65+ | 1.10 EUR |