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VJ1206Y224KXAAT VJ1206Y224KXAAT VISHAY vjcommercialseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.22µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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TSOP39438 TSOP39438 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8ACD2A742E9FF6143&compId=TSOP39436.pdf?ci_sign=f10660b5f5c855bf068fb07726f92f5fb97afd4b Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 1101 Stücke:
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59+1.23 EUR
74+0.97 EUR
99+0.72 EUR
105+0.68 EUR
500+0.66 EUR
Mindestbestellmenge: 59
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TSOP4138 TSOP4138 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BAF96C32129E27&compId=TSOP4138.pdf?ci_sign=7a03254831903f582a949bd5698a48bc95345eff Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 58 Stücke:
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58+1.23 EUR
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TSOP4438 TSOP4438 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C9820DC80A0A18&compId=TSOP4438.pdf?ci_sign=3322f3cf8b1903174897ca0f14bf4f2d6a424066 Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 811 Stücke:
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58+1.24 EUR
89+0.81 EUR
103+0.70 EUR
109+0.66 EUR
113+0.63 EUR
Mindestbestellmenge: 58
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TSOP58338 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C97E5F41D76A18&compId=TSOP58336.pdf?ci_sign=b4aecd88e119e00a0500410e8be1df59d3ed764b Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
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TSOP6138TT TSOP6138TT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB45F82B073E27&compId=TSOP6138TT.pdf?ci_sign=444e2347833381a899e8ee26ad28b87b0e86f6bf Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 873 Stücke:
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57+1.27 EUR
109+0.66 EUR
115+0.62 EUR
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TSOP6238TT TSOP6238TT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB490C0DEB1E27&compId=TSOP6238TT.pdf?ci_sign=b8dc249dbf5b67662b4df96ca20dcd25d047e783 Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 265 Stücke:
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59+1.22 EUR
88+0.82 EUR
103+0.70 EUR
109+0.66 EUR
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PA16NP472MAB15 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBD9116D482AE80D5&compId=p16-series.pdf?ci_sign=8b114df350ec09dcb670f4c9ff70a4c3e5d03566 Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
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PE30L0FL472KAB PE30L0FL472KAB VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE787BA75F12C106745&compId=pe30.pdf?ci_sign=c10cd9b96366e63c778e9fc60e39b673aa8e84a7 Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 6mm
Type of potentiometer: shaft
Shaft length: 25mm
Characteristics: linear
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
Thread length: 12mm
Track material: cermet
Kind of potentiometer: single turn
Mounting: on panel
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
auf Bestellung 152 Stücke:
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3+23.98 EUR
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TS53YJ102MR10 TS53YJ102MR10 VISHAY pVersion=0046&contRep=ZT&docId=E1C05AB5921022F1A6F5005056AB5A8F&compId=ts53yj.pdf?ci_sign=472ba78208969c07d575b9ea951ef69c484074bb Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
auf Bestellung 328 Stücke:
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19+3.80 EUR
43+1.67 EUR
46+1.59 EUR
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IRF644STRLPBF VISHAY sihf644s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
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IRF644STRRPBF VISHAY sihf644s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BFC233820333 BFC233820333 VISHAY mkp3382x2.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
Terminal pitch: 7.5mm
auf Bestellung 1163 Stücke:
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38+1.89 EUR
75+0.95 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 38
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SI2301CDS-T1-E3 VISHAY si2301cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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MRS25000C2324FCT00 MRS25000C2324FCT00 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9EAE4FD04845C0C4&compId=MRS25.pdf?ci_sign=72b1a8dc376371581084ec59692fbe78626fa278 Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Power: 0.6W
Resistance: 2.32MΩ
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Mounting: THT
Type of resistor: thin film
auf Bestellung 9441 Stücke:
Lieferzeit 14-21 Tag (e)
240+0.30 EUR
570+0.13 EUR
1220+0.06 EUR
1280+0.06 EUR
Mindestbestellmenge: 240
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VJ0805A561KXCAT VJ0805A561KXCAT VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 2200 Stücke:
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220+0.33 EUR
560+0.13 EUR
1170+0.06 EUR
1240+0.06 EUR
Mindestbestellmenge: 220
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IRL530PBF IRL530PBF VISHAY IRL530%2CSiHL530.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
59+1.21 EUR
97+0.74 EUR
103+0.70 EUR
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IRL530STRRPBF VISHAY sihl530s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9540STRRPBF VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1.5KE130CA-E3/54 1.5KE130CA-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282 Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 149 Stücke:
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76+0.94 EUR
96+0.75 EUR
149+0.49 EUR
Mindestbestellmenge: 76
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593D107X9010D2TE3 593D107X9010D2TE3 VISHAY 593d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 100mΩ
Roll diameter max.: 178mm
Kind of capacitor: low ESR
auf Bestellung 1270 Stücke:
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76+0.94 EUR
112+0.64 EUR
201+0.36 EUR
212+0.34 EUR
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593D107X9016D2TE3 593D107X9016D2TE3 VISHAY 593d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 100µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Case: D
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.10 EUR
87+0.82 EUR
143+0.50 EUR
152+0.47 EUR
Mindestbestellmenge: 35
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GRC00JE6821A00L GRC00JE6821A00L VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Operating temperature: -40...105°C
Tolerance: ±20%
Type of capacitor: electrolytic
Capacitance: 6.8mF
Operating voltage: 10V DC
Service life: 2000h
Dimensions: 16x20mm
Mounting: THT
auf Bestellung 85 Stücke:
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64+1.13 EUR
85+0.84 EUR
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IRFR9024TRLPBF VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRFR1N60ATRLPBF VISHAY sihfr1n6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
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IRFR1N60ATRPBF VISHAY sihfr1n6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
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IRFU1N60APBF VISHAY sihfr1n6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
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SIHFR1N60A-GE3 SIHFR1N60A-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC458A75FA6A143&compId=IRFR1N60A.pdf?ci_sign=ebfb7bcce254ade9a17457e6b543988683075e31 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
auf Bestellung 89 Stücke:
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89+0.80 EUR
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SIHFR1N60ATRL-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
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SI7850ADP-T1-GE3 VISHAY si7850adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 35.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
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SI7850DP-T1-E3 VISHAY 71625.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
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SI7806ADN-T1-E3 VISHAY 72995.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
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SI7806ADN-T1-GE3 VISHAY 72995.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
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IRFI740GLCPBF VISHAY 91155.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Produkt ist nicht verfügbar
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IRLR014PBF IRLR014PBF VISHAY sihlr014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
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IRLR014TRLPBF VISHAY sihlr014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
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VJ1206A102JXACW1BC VJ1206A102JXACW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Tolerance: ±5%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 1nF
Operating voltage: 50V
Kind of capacitor: MLCC
Case - mm: 3216
Case - inch: 1206
Mounting: SMD
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410+0.17 EUR
569+0.13 EUR
649+0.11 EUR
2128+0.03 EUR
2253+0.03 EUR
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K827PH K827PH VISHAY K827PH.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Case: DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
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107+0.67 EUR
115+0.63 EUR
180+0.40 EUR
191+0.38 EUR
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CRCW0805620KJNTABC CRCW0805620KJNTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
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3500+0.02 EUR
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CRCW0805620RFKTABC CRCW0805620RFKTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620Ω
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
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IRF9610SPBF VISHAY sihf9610.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
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IRF9610STRRPBF VISHAY sihf9610.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9630STRLPBF VISHAY IRF9630S_SiHF9630S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9640LPBF VISHAY IRF%28SiHF%299640%28S%2CL%29.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
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M43P203KB40 M43P203KB40 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA4A1648551BF&compId=VISHAY-43.pdf?ci_sign=9c989ddf8ae931462465136665a167e2e8f26de6 Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard: 19mm
Mounting: THT
Min. insulation resistance: 1GΩ
Terminal pitch: 12.7x2.54mm
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
auf Bestellung 234 Stücke:
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25+2.95 EUR
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IRF9Z24STRLPBF VISHAY sihf9z24.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
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BZX85C20-TAP BZX85C20-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587CA2099D64E2469&compId=BZX85C10-TAP.pdf?ci_sign=068488ce13943842c1c81b6b4758f46d16a648e7 Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 20084 Stücke:
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334+0.21 EUR
432+0.17 EUR
618+0.12 EUR
724+0.10 EUR
1235+0.06 EUR
1306+0.06 EUR
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BZX85C68-TAP BZX85C68-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 23180 Stücke:
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490+0.15 EUR
980+0.07 EUR
1100+0.07 EUR
1240+0.06 EUR
1310+0.06 EUR
5000+0.05 EUR
Mindestbestellmenge: 490
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VJ0402G104KXQCW1BC VJ0402G104KXQCW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
auf Bestellung 10158 Stücke:
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5051+0.01 EUR
8929+0.01 EUR
10158+0.01 EUR
Mindestbestellmenge: 5051
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GSC00AH2220JARL VISHAY GSC.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2mF; 6.3VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 12.5x13.5mm
Height: 13.5mm
Produkt ist nicht verfügbar
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IRFP350LCPBF VISHAY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Produkt ist nicht verfügbar
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MCT06030C1008FP500 MCT06030C1008FP500 VISHAY mcx0x0xpro.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
Case - mm: 1608
Case - inch: 0603
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IRF630STRLPBF VISHAY sih630s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
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IRF630STRRPBF VISHAY sih630s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
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IRF720SPBF VISHAY sihf720s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTCS0805E3334JHT NTCS0805E3334JHT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 0.33MΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±5%
Mounting: SMD
Material constant B: 3930K
Case - inch: 0805
auf Bestellung 2418 Stücke:
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200+0.36 EUR
313+0.23 EUR
343+0.21 EUR
353+0.20 EUR
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NTCS0805E3474FXT NTCS0805E3474FXT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
auf Bestellung 1657 Stücke:
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109+0.66 EUR
133+0.54 EUR
168+0.43 EUR
178+0.40 EUR
1000+0.39 EUR
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IRLR024PBF VISHAY sihlr024.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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IRLR024TRLPBF VISHAY sihlr024.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR024TRPBF VISHAY sihlr024.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VJ1206Y224KXAAT vjcommercialseries.pdf
VJ1206Y224KXAAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.22µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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TSOP39438 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8ACD2A742E9FF6143&compId=TSOP39436.pdf?ci_sign=f10660b5f5c855bf068fb07726f92f5fb97afd4b
TSOP39438
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
74+0.97 EUR
99+0.72 EUR
105+0.68 EUR
500+0.66 EUR
Mindestbestellmenge: 59
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TSOP4138 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BAF96C32129E27&compId=TSOP4138.pdf?ci_sign=7a03254831903f582a949bd5698a48bc95345eff
TSOP4138
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 58 Stücke:
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Anzahl Preis
58+1.23 EUR
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TSOP4438 pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C9820DC80A0A18&compId=TSOP4438.pdf?ci_sign=3322f3cf8b1903174897ca0f14bf4f2d6a424066
TSOP4438
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
89+0.81 EUR
103+0.70 EUR
109+0.66 EUR
113+0.63 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
TSOP58338 pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C97E5F41D76A18&compId=TSOP58336.pdf?ci_sign=b4aecd88e119e00a0500410e8be1df59d3ed764b
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSOP6138TT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB45F82B073E27&compId=TSOP6138TT.pdf?ci_sign=444e2347833381a899e8ee26ad28b87b0e86f6bf
TSOP6138TT
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
109+0.66 EUR
115+0.62 EUR
Mindestbestellmenge: 57
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TSOP6238TT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB490C0DEB1E27&compId=TSOP6238TT.pdf?ci_sign=b8dc249dbf5b67662b4df96ca20dcd25d047e783
TSOP6238TT
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
88+0.82 EUR
103+0.70 EUR
109+0.66 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
PA16NP472MAB15 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBD9116D482AE80D5&compId=p16-series.pdf?ci_sign=8b114df350ec09dcb670f4c9ff70a4c3e5d03566
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PE30L0FL472KAB pVersion=0046&contRep=ZT&docId=005056AB752F1EE787BA75F12C106745&compId=pe30.pdf?ci_sign=c10cd9b96366e63c778e9fc60e39b673aa8e84a7
PE30L0FL472KAB
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 6mm
Type of potentiometer: shaft
Shaft length: 25mm
Characteristics: linear
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
Thread length: 12mm
Track material: cermet
Kind of potentiometer: single turn
Mounting: on panel
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.98 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TS53YJ102MR10 pVersion=0046&contRep=ZT&docId=E1C05AB5921022F1A6F5005056AB5A8F&compId=ts53yj.pdf?ci_sign=472ba78208969c07d575b9ea951ef69c484074bb
TS53YJ102MR10
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.80 EUR
43+1.67 EUR
46+1.59 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IRF644STRLPBF sihf644s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF644STRRPBF sihf644s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFC233820333 mkp3382x2.pdf
BFC233820333
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
Terminal pitch: 7.5mm
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
75+0.95 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
SI2301CDS-T1-E3 si2301cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MRS25000C2324FCT00 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9EAE4FD04845C0C4&compId=MRS25.pdf?ci_sign=72b1a8dc376371581084ec59692fbe78626fa278
MRS25000C2324FCT00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Power: 0.6W
Resistance: 2.32MΩ
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Mounting: THT
Type of resistor: thin film
auf Bestellung 9441 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.30 EUR
570+0.13 EUR
1220+0.06 EUR
1280+0.06 EUR
Mindestbestellmenge: 240
Im Einkaufswagen  Stück im Wert von  UAH
VJ0805A561KXCAT pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ0805A561KXCAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
220+0.33 EUR
560+0.13 EUR
1170+0.06 EUR
1240+0.06 EUR
Mindestbestellmenge: 220
Im Einkaufswagen  Stück im Wert von  UAH
IRL530PBF IRL530%2CSiHL530.pdf
IRL530PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
59+1.21 EUR
97+0.74 EUR
103+0.70 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRL530STRRPBF sihl530s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE130CA-E3/54 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282
1.5KE130CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
96+0.75 EUR
149+0.49 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
593D107X9010D2TE3 593d.pdf
593D107X9010D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 100mΩ
Roll diameter max.: 178mm
Kind of capacitor: low ESR
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
112+0.64 EUR
201+0.36 EUR
212+0.34 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
593D107X9016D2TE3 593d.pdf
593D107X9016D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 100µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Case: D
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.10 EUR
87+0.82 EUR
143+0.50 EUR
152+0.47 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
GRC00JE6821A00L pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1
GRC00JE6821A00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Operating temperature: -40...105°C
Tolerance: ±20%
Type of capacitor: electrolytic
Capacitance: 6.8mF
Operating voltage: 10V DC
Service life: 2000h
Dimensions: 16x20mm
Mounting: THT
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
85+0.84 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024TRLPBF sihfr902.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1N60ATRLPBF sihfr1n6.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1N60ATRPBF sihfr1n6.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU1N60APBF sihfr1n6.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFR1N60A-GE3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC458A75FA6A143&compId=IRFR1N60A.pdf?ci_sign=ebfb7bcce254ade9a17457e6b543988683075e31
SIHFR1N60A-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
89+0.80 EUR
Mindestbestellmenge: 89
Im Einkaufswagen  Stück im Wert von  UAH
SIHFR1N60ATRL-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
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SI7850ADP-T1-GE3 si7850adp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 35.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
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SI7850DP-T1-E3 71625.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
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SI7806ADN-T1-E3 72995.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7806ADN-T1-GE3 72995.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
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IRFI740GLCPBF description 91155.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR014PBF sihlr014.pdf
IRLR014PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
138+0.52 EUR
151+0.47 EUR
Mindestbestellmenge: 82
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IRLR014TRLPBF sihlr014.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
Produkt ist nicht verfügbar
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VJ1206A102JXACW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ1206A102JXACW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Tolerance: ±5%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 1nF
Operating voltage: 50V
Kind of capacitor: MLCC
Case - mm: 3216
Case - inch: 1206
Mounting: SMD
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.30 EUR
410+0.17 EUR
569+0.13 EUR
649+0.11 EUR
2128+0.03 EUR
2253+0.03 EUR
Mindestbestellmenge: 239
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K827PH K827PH.pdf
K827PH
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Case: DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
107+0.67 EUR
115+0.63 EUR
180+0.40 EUR
191+0.38 EUR
Mindestbestellmenge: 77
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CRCW0805620KJNTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW0805620KJNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2300+0.03 EUR
3500+0.02 EUR
Mindestbestellmenge: 2300
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CRCW0805620RFKTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW0805620RFKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620Ω
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2200+0.03 EUR
4000+0.02 EUR
6500+0.01 EUR
10500+0.01 EUR
Mindestbestellmenge: 2200
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IRF9610SPBF sihf9610.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9610STRRPBF sihf9610.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9630STRLPBF IRF9630S_SiHF9630S.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9640LPBF IRF%28SiHF%299640%28S%2CL%29.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Produkt ist nicht verfügbar
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M43P203KB40 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA4A1648551BF&compId=VISHAY-43.pdf?ci_sign=9c989ddf8ae931462465136665a167e2e8f26de6
M43P203KB40
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard: 19mm
Mounting: THT
Min. insulation resistance: 1GΩ
Terminal pitch: 12.7x2.54mm
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.53 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 13
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IRF9Z24STRLPBF sihf9z24.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX85C20-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE587CA2099D64E2469&compId=BZX85C10-TAP.pdf?ci_sign=068488ce13943842c1c81b6b4758f46d16a648e7
BZX85C20-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 20084 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
432+0.17 EUR
618+0.12 EUR
724+0.10 EUR
1235+0.06 EUR
1306+0.06 EUR
Mindestbestellmenge: 334
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BZX85C68-TAP BZX85C10-TAP.pdf
BZX85C68-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 23180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+0.15 EUR
980+0.07 EUR
1100+0.07 EUR
1240+0.06 EUR
1310+0.06 EUR
5000+0.05 EUR
Mindestbestellmenge: 490
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VJ0402G104KXQCW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ0402G104KXQCW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
auf Bestellung 10158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5051+0.01 EUR
8929+0.01 EUR
10158+0.01 EUR
Mindestbestellmenge: 5051
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GSC00AH2220JARL GSC.pdf
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2mF; 6.3VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 12.5x13.5mm
Height: 13.5mm
Produkt ist nicht verfügbar
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IRFP350LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Produkt ist nicht verfügbar
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MCT06030C1008FP500 mcx0x0xpro.pdf
MCT06030C1008FP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
Case - mm: 1608
Case - inch: 0603
Produkt ist nicht verfügbar
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IRF630STRLPBF sih630s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF630STRRPBF sih630s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF720SPBF sihf720s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTCS0805E3334JHT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae
NTCS0805E3334JHT
Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 0.33MΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±5%
Mounting: SMD
Material constant B: 3930K
Case - inch: 0805
auf Bestellung 2418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
313+0.23 EUR
343+0.21 EUR
353+0.20 EUR
Mindestbestellmenge: 200
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NTCS0805E3474FXT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae
NTCS0805E3474FXT
Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
auf Bestellung 1657 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
133+0.54 EUR
168+0.43 EUR
178+0.40 EUR
1000+0.39 EUR
Mindestbestellmenge: 109
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IRLR024PBF description sihlr024.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR024TRLPBF sihlr024.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR024TRPBF sihlr024.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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