Foto | Bezeichnung | Hersteller | Beschreibung |
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VJ1206Y224KXAAT | VISHAY |
![]() Description: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.22µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TSOP39438 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
auf Bestellung 1101 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP4138 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° Connector variant: straight |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP4438 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
auf Bestellung 811 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP58338 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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TSOP6138TT | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: SMD Supply voltage: 2.5...5.5V Viewing angle: 100° Connector variant: angled |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP6238TT | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: SMD Supply voltage: 2.5...5.5V Viewing angle: 100° Connector variant: angled |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
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PA16NP472MAB15 | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 4.7kΩ Tolerance: ±20% Power: 0.5W Characteristics: linear Shaft diameter: 16mm Leads: solder lugs Track material: plastic Mechanical rotation angle: 300° Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Mechanical durability: 50000 cycles Temperature coefficient: 500ppm/°C Body material: plastic |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PE30L0FL472KAB | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear Resistance: 4.7kΩ Power: 3W Tolerance: ±10% Max. operating voltage: 300V Temperature coefficient: 150ppm/°C IP rating: IP67 Leads: for soldering Shaft diameter: 6mm Type of potentiometer: shaft Shaft length: 25mm Characteristics: linear Mechanical rotation angle: 300 ±5° Electrical rotation angle: 270 ±10° Potentiometer features: for industrial use; for military use Shaft surface: smooth Thread length: 12mm Track material: cermet Kind of potentiometer: single turn Mounting: on panel Min. insulation resistance: 1TΩ Operating temperature: -55...125°C |
auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) |
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TS53YJ102MR10 | VISHAY |
![]() Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear Resistance: 1kΩ Power: 0.25W Tolerance: ±20% Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C IP rating: IP67 Leads: YJ Type of potentiometer: mounting Characteristics: linear Mechanical rotation angle: 270 ±10° Electrical rotation angle: 220 ±15° Torque: 1,5Ncm Track material: cermet Kind of potentiometer: single turn Mounting: SMD Temperature coefficient: 100ppm/°C Max. operating voltage: 200V |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF644STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 56A Case: D2PAK; TO263 Drain-source voltage: 250V Drain current: 8.5A On-state resistance: 0.28Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF644STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 56A Case: D2PAK; TO263 Drain-source voltage: 250V Drain current: 8.5A On-state resistance: 0.28Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BFC233820333 | VISHAY |
![]() Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm Type of capacitor: polypropylene Capacitance: 33nF Tolerance: ±20% Mounting: THT Body dimensions: 10x5x10.5mm Operating voltage: 310V AC; 630V DC Terminal pitch: 7.5mm |
auf Bestellung 1163 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301CDS-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MRS25000C2324FCT00 | VISHAY |
![]() Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm Power: 0.6W Resistance: 2.32MΩ Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Mounting: THT Type of resistor: thin film |
auf Bestellung 9441 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A561KXCAT | VISHAY |
![]() Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 560pF Operating voltage: 200V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL530PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL530STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF9540STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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1.5KE130CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 111V Breakdown voltage: 130.5V Max. forward impulse current: 8.4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
auf Bestellung 149 Stücke: Lieferzeit 14-21 Tag (e) |
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593D107X9010D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ Type of capacitor: tantalum Capacitance: 100µF Operating voltage: 10V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount ESR value: 100mΩ Roll diameter max.: 178mm Kind of capacitor: low ESR |
auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) |
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593D107X9016D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ Type of capacitor: tantalum Mounting: SMD Capacitance: 100µF Operating voltage: 16V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount ESR value: 125mΩ Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Case: D |
auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
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GRC00JE6821A00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C Operating temperature: -40...105°C Tolerance: ±20% Type of capacitor: electrolytic Capacitance: 6.8mF Operating voltage: 10V DC Service life: 2000h Dimensions: 16x20mm Mounting: THT |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9024TRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFR1N60ATRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFR1N60ATRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFU1N60APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Power dissipation: 36W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SIHFR1N60A-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHFR1N60ATRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SI7850ADP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 35.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SI7850DP-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 10.3A On-state resistance: 31mΩ Type of transistor: N-MOSFET Power dissipation: 4.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SI7806ADN-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SI7806ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFI740GLCPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 23A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRLR014PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 8.4nC On-state resistance: 0.28Ω Gate-source voltage: ±10V Pulsed drain current: 31A |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR014TRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 8.4nC On-state resistance: 0.28Ω Gate-source voltage: ±10V Pulsed drain current: 31A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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VJ1206A102JXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206 Operating temperature: -55...125°C Tolerance: ±5% Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 1nF Operating voltage: 50V Kind of capacitor: MLCC Case - mm: 3216 Case - inch: 1206 Mounting: SMD |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
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K827PH | VISHAY |
![]() Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8 Case: DIP8 Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 5µs Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@60mA Type of optocoupler: optocoupler Mounting: THT |
auf Bestellung 444 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805620KJNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C Operating temperature: -55...155°C Type of resistor: thick film Power: 0.125W Resistance: 620kΩ Tolerance: ±5% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805620RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C Operating temperature: -55...155°C Type of resistor: thick film Power: 0.125W Resistance: 620Ω Tolerance: ±1% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD |
auf Bestellung 10500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9610SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF9610STRRPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF9630STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Pulsed drain current: -26A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF9640LPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 44nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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M43P203KB40 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear Resistance: 20kΩ Power: 0.75W Tolerance: ±10% IP rating: IP67 Type of potentiometer: mounting Number of electrical turns: 15 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Potentiometer standard: 19mm Mounting: THT Min. insulation resistance: 1GΩ Terminal pitch: 12.7x2.54mm Operating temperature: -55...125°C Body dimensions: 19x6.4x4.8mm |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z24STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.7A Pulsed drain current: -44A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Gate charge: 19nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BZX85C20-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 20V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
auf Bestellung 20084 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C68-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 68V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 23180 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0402G104KXQCW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 10V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...85°C |
auf Bestellung 10158 Stücke: Lieferzeit 14-21 Tag (e) |
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GSC00AH2220JARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 2.2mF; 6.3VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 2.2mF Operating voltage: 6.3V DC Tolerance: ±20% Operating temperature: -55...105°C Manufacturer series: GSC Nominal life: 2000h Dimensions: 12.5x13.5mm Height: 13.5mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFP350LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 64A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MCT06030C1008FP500 | VISHAY |
![]() Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C Type of resistor: thin film Mounting: SMD Resistance: 1Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...125°C; -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Version: 0 Manufacturer series: MCT0603 Case - mm: 1608 Case - inch: 0603 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRF630STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF630STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF720SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.1A Pulsed drain current: 13A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 20nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NTCS0805E3334JHT | VISHAY |
![]() Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 0.33MΩ Operating temperature: -40...150°C Power: 0.21W Tolerance: ±5% Mounting: SMD Material constant B: 3930K Case - inch: 0805 |
auf Bestellung 2418 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0805E3474FXT | VISHAY |
![]() Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 470kΩ Operating temperature: -40...150°C Power: 0.21W Tolerance: ±1% Mounting: SMD Material constant B: 4025K Case - inch: 0805 |
auf Bestellung 1657 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR024PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRLR024TRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRLR024TRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
VJ1206Y224KXAAT |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.22µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.22µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSOP39438 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
74+ | 0.97 EUR |
99+ | 0.72 EUR |
105+ | 0.68 EUR |
500+ | 0.66 EUR |
TSOP4138 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.23 EUR |
TSOP4438 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
89+ | 0.81 EUR |
103+ | 0.70 EUR |
109+ | 0.66 EUR |
113+ | 0.63 EUR |
TSOP58338 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSOP6138TT |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
109+ | 0.66 EUR |
115+ | 0.62 EUR |
TSOP6238TT |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
88+ | 0.82 EUR |
103+ | 0.70 EUR |
109+ | 0.66 EUR |
PA16NP472MAB15 |
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Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PE30L0FL472KAB |
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Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 6mm
Type of potentiometer: shaft
Shaft length: 25mm
Characteristics: linear
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
Thread length: 12mm
Track material: cermet
Kind of potentiometer: single turn
Mounting: on panel
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 6mm
Type of potentiometer: shaft
Shaft length: 25mm
Characteristics: linear
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
Thread length: 12mm
Track material: cermet
Kind of potentiometer: single turn
Mounting: on panel
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.98 EUR |
TS53YJ102MR10 |
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Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.80 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
IRF644STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF644STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Case: D2PAK; TO263
Drain-source voltage: 250V
Drain current: 8.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC233820333 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
Terminal pitch: 7.5mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
Terminal pitch: 7.5mm
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
75+ | 0.95 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
SI2301CDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MRS25000C2324FCT00 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Power: 0.6W
Resistance: 2.32MΩ
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Mounting: THT
Type of resistor: thin film
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Power: 0.6W
Resistance: 2.32MΩ
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Mounting: THT
Type of resistor: thin film
auf Bestellung 9441 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
240+ | 0.30 EUR |
570+ | 0.13 EUR |
1220+ | 0.06 EUR |
1280+ | 0.06 EUR |
VJ0805A561KXCAT |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
220+ | 0.33 EUR |
560+ | 0.13 EUR |
1170+ | 0.06 EUR |
1240+ | 0.06 EUR |
IRL530PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.59 EUR |
59+ | 1.21 EUR |
97+ | 0.74 EUR |
103+ | 0.70 EUR |
IRL530STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9540STRRPBF |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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1.5KE130CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
96+ | 0.75 EUR |
149+ | 0.49 EUR |
593D107X9010D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 100mΩ
Roll diameter max.: 178mm
Kind of capacitor: low ESR
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 100mΩ
Roll diameter max.: 178mm
Kind of capacitor: low ESR
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
112+ | 0.64 EUR |
201+ | 0.36 EUR |
212+ | 0.34 EUR |
593D107X9016D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 100µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 100µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Case: D
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.10 EUR |
87+ | 0.82 EUR |
143+ | 0.50 EUR |
152+ | 0.47 EUR |
GRC00JE6821A00L |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Operating temperature: -40...105°C
Tolerance: ±20%
Type of capacitor: electrolytic
Capacitance: 6.8mF
Operating voltage: 10V DC
Service life: 2000h
Dimensions: 16x20mm
Mounting: THT
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Operating temperature: -40...105°C
Tolerance: ±20%
Type of capacitor: electrolytic
Capacitance: 6.8mF
Operating voltage: 10V DC
Service life: 2000h
Dimensions: 16x20mm
Mounting: THT
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
85+ | 0.84 EUR |
IRFR9024TRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR1N60ATRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR1N60ATRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFU1N60APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHFR1N60A-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
89+ | 0.80 EUR |
SIHFR1N60ATRL-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7850ADP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 35.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 35.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7850DP-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7806ADN-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7806ADN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFI740GLCPBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR014PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
138+ | 0.52 EUR |
151+ | 0.47 EUR |
IRLR014TRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VJ1206A102JXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Tolerance: ±5%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 1nF
Operating voltage: 50V
Kind of capacitor: MLCC
Case - mm: 3216
Case - inch: 1206
Mounting: SMD
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Tolerance: ±5%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 1nF
Operating voltage: 50V
Kind of capacitor: MLCC
Case - mm: 3216
Case - inch: 1206
Mounting: SMD
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.30 EUR |
410+ | 0.17 EUR |
569+ | 0.13 EUR |
649+ | 0.11 EUR |
2128+ | 0.03 EUR |
2253+ | 0.03 EUR |
K827PH |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Case: DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Case: DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
107+ | 0.67 EUR |
115+ | 0.63 EUR |
180+ | 0.40 EUR |
191+ | 0.38 EUR |
CRCW0805620KJNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2300+ | 0.03 EUR |
3500+ | 0.02 EUR |
CRCW0805620RFKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620Ω
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 620Ω
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2200+ | 0.03 EUR |
4000+ | 0.02 EUR |
6500+ | 0.01 EUR |
10500+ | 0.01 EUR |
IRF9610SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
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IRF9610STRRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9630STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9640LPBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Produkt ist nicht verfügbar
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M43P203KB40 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard: 19mm
Mounting: THT
Min. insulation resistance: 1GΩ
Terminal pitch: 12.7x2.54mm
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard: 19mm
Mounting: THT
Min. insulation resistance: 1GΩ
Terminal pitch: 12.7x2.54mm
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.53 EUR |
25+ | 2.95 EUR |
26+ | 2.79 EUR |
IRF9Z24STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX85C20-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 20084 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
432+ | 0.17 EUR |
618+ | 0.12 EUR |
724+ | 0.10 EUR |
1235+ | 0.06 EUR |
1306+ | 0.06 EUR |
BZX85C68-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 23180 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
490+ | 0.15 EUR |
980+ | 0.07 EUR |
1100+ | 0.07 EUR |
1240+ | 0.06 EUR |
1310+ | 0.06 EUR |
5000+ | 0.05 EUR |
VJ0402G104KXQCW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
auf Bestellung 10158 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5051+ | 0.01 EUR |
8929+ | 0.01 EUR |
10158+ | 0.01 EUR |
GSC00AH2220JARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2mF; 6.3VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 12.5x13.5mm
Height: 13.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2mF; 6.3VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 12.5x13.5mm
Height: 13.5mm
Produkt ist nicht verfügbar
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IRFP350LCPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Produkt ist nicht verfügbar
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MCT06030C1008FP500 |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
Case - mm: 1608
Case - inch: 0603
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
Case - mm: 1608
Case - inch: 0603
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IRF630STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF720SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTCS0805E3334JHT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 0.33MΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±5%
Mounting: SMD
Material constant B: 3930K
Case - inch: 0805
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 0.33MΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±5%
Mounting: SMD
Material constant B: 3930K
Case - inch: 0805
auf Bestellung 2418 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
313+ | 0.23 EUR |
343+ | 0.21 EUR |
353+ | 0.20 EUR |
NTCS0805E3474FXT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
auf Bestellung 1657 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
133+ | 0.54 EUR |
168+ | 0.43 EUR |
178+ | 0.40 EUR |
1000+ | 0.39 EUR |
IRLR024PBF | ![]() |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
IRLR024TRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
IRLR024TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH