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TS53YJ103MR10 TS53YJ103MR10 VISHAY pVersion=0046&contRep=ZT&docId=E1C05AB5921022F1A6F5005056AB5A8F&compId=ts53yj.pdf?ci_sign=472ba78208969c07d575b9ea951ef69c484074bb Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
auf Bestellung 634 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.00 EUR
24+2.99 EUR
45+1.62 EUR
47+1.53 EUR
500+1.47 EUR
Mindestbestellmenge: 18
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CRCW12061M00FKTABC CRCW12061M00FKTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 200V
auf Bestellung 74800 Stücke:
Lieferzeit 14-21 Tag (e)
2400+0.03 EUR
5300+0.01 EUR
7500+0.01 EUR
17300+0.00 EUR
18300+0.00 EUR
Mindestbestellmenge: 2400
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CRCW12061M00JNTABC CRCW12061M00JNTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Max. operating voltage: 200V
auf Bestellung 19600 Stücke:
Lieferzeit 14-21 Tag (e)
2200+0.03 EUR
5200+0.01 EUR
6600+0.01 EUR
14200+0.01 EUR
15100+0.00 EUR
15300+0.00 EUR
Mindestbestellmenge: 2200
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1.5KE82CA-E3/54 1.5KE82CA-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282 Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
163+0.44 EUR
208+0.34 EUR
220+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 148
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GRC00DD1021CTNL GRC00DD1021CTNL VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Produkt ist nicht verfügbar
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IRFP21N60LPBF VISHAY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Produkt ist nicht verfügbar
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IRFP22N60KPBF VISHAY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Produkt ist nicht verfügbar
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IRFP26N60LPBF VISHAY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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GBU4A-E3/45 GBU4A-E3/45 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809ED455A165C0D2&compId=gbu4a.pdf?ci_sign=3d60bb606adf73b80bd40b73a5850af667159d59 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.30 EUR
61+1.17 EUR
77+0.93 EUR
82+0.88 EUR
Mindestbestellmenge: 55
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GBU4A-E3/51 GBU4A-E3/51 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809ED455A165C0D2&compId=gbu4a.pdf?ci_sign=3d60bb606adf73b80bd40b73a5850af667159d59 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.60 EUR
37+1.94 EUR
85+0.84 EUR
90+0.80 EUR
Mindestbestellmenge: 28
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IRF540STRLPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 100V
Drain current: 28A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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IRF540STRRPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 100V
Drain current: 28A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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VJ0201G104KXJCW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
Produkt ist nicht verfügbar
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AC03000001007JAC00 AC03000001007JAC00 VISHAY ac_ac-at_ac-ni.pdf Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Leads: axial
auf Bestellung 1491 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
143+0.50 EUR
177+0.41 EUR
304+0.24 EUR
321+0.22 EUR
Mindestbestellmenge: 93
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GSC00AF2211VARL GSC00AF2211VARL VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D59CBCE69FA0D2&compId=GSC.pdf?ci_sign=d7e452a815def9627909872e63e3259a2f2c8e7d Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Nominal life: 2000h
Manufacturer series: GSC
Height: 10mm
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
210+0.35 EUR
330+0.22 EUR
430+0.17 EUR
440+0.16 EUR
Mindestbestellmenge: 210
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IRFR9220PBF IRFR9220PBF VISHAY IRFR9220PBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
77+0.93 EUR
130+0.55 EUR
137+0.52 EUR
Mindestbestellmenge: 36
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IRFR9220TRPBF IRFR9220TRPBF VISHAY IRFR9220TRPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1670 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
60+1.20 EUR
141+0.51 EUR
150+0.48 EUR
Mindestbestellmenge: 50
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VJ0603A151JXBAC VJ0603A151JXBAC VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
538+0.13 EUR
703+0.10 EUR
781+0.09 EUR
1568+0.05 EUR
1656+0.04 EUR
Mindestbestellmenge: 295
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VJ1111D100JXRAJ VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D1D1E64081A0CE&compId=vjhifreqseries.pdf?ci_sign=234717e3b6edbad469f20dccf69f62576d02beab Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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BZX55C3V0-TAP BZX55C3V0-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 19926 Stücke:
Lieferzeit 14-21 Tag (e)
606+0.12 EUR
910+0.08 EUR
1087+0.07 EUR
1629+0.04 EUR
2874+0.03 EUR
3031+0.02 EUR
Mindestbestellmenge: 606
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WSL2512R3300FEA WSL2512R3300FEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BDE7373FBE4371BF&compId=wsl.pdf?ci_sign=31a158112628ae78e76ed7d0d814a84fdfe5b05a Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
179+0.40 EUR
192+0.37 EUR
332+0.22 EUR
353+0.20 EUR
Mindestbestellmenge: 122
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IRF510STRRPBF VISHAY sihf510s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Produkt ist nicht verfügbar
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IRF830ALPBF IRF830ALPBF VISHAY sihf830a.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
54+1.34 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 49
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IRF830ASPBF VISHAY sihf830a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF830ASTRLPBF VISHAY sihf830a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF830BPBF VISHAY irf830b.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840ASTRRPBF VISHAY sihf840.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCLPBF VISHAY sihf840l.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCSPBF VISHAY sihf840l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840STRRPBF VISHAY sihf840s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9530STRLPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9530STRRPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB13N50APBF VISHAY tf-irfb13n50apbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SISS5808DN-T1-GE3 VISHAY siss5808dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
Mounting: SMD
Produkt ist nicht verfügbar
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PR03000202203JAC00 PR03000202203JAC00 VISHAY pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa Category: THT Resistors
Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Resistance: 220kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Temperature coefficient: 250ppm/°C
Resistor features: high power and small dimension
Leads: axial
Mounting: THT
Body dimensions: Ø5.2x19.5mm
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
137+0.52 EUR
228+0.31 EUR
260+0.28 EUR
290+0.25 EUR
325+0.22 EUR
340+0.21 EUR
Mindestbestellmenge: 137
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BZX85C22-TAP BZX85C22-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587CA2099D64E2469&compId=BZX85C10-TAP.pdf?ci_sign=068488ce13943842c1c81b6b4758f46d16a648e7 Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 7478 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
421+0.17 EUR
643+0.11 EUR
747+0.10 EUR
1289+0.06 EUR
1367+0.05 EUR
Mindestbestellmenge: 278
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IRF640PBF-BE3 VISHAY sihf640.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
43+1.67 EUR
50+1.43 EUR
Mindestbestellmenge: 31
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IRF640STRRPBF VISHAY sihf640s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BFC233845104 VISHAY mkp3384x2.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 630VDC; 300VAC; THT; ±10%; 15mm
Mounting: THT
Operating voltage: 300V AC; 630V DC
Type of capacitor: polypropylene
Capacitance: 0.1µF
Body dimensions: 17.5x6x12mm
Terminal pitch: 15mm
Tolerance: ±10%
Produkt ist nicht verfügbar
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CRCW06032R20FKEA CRCW06032R20FKEA VISHAY dcrcwe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 75V
auf Bestellung 8079 Stücke:
Lieferzeit 14-21 Tag (e)
619+0.12 EUR
2273+0.03 EUR
3624+0.02 EUR
4348+0.02 EUR
5556+0.01 EUR
6667+0.01 EUR
7937+0.01 EUR
8065+0.01 EUR
Mindestbestellmenge: 619
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GSC00AP4712AARL VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D59CBCE69FA0D2&compId=GSC.pdf?ci_sign=d7e452a815def9627909872e63e3259a2f2c8e7d Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
Manufacturer series: GSC
Produkt ist nicht verfügbar
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ZSC00AP4712AARL VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5AC8800CC60D2&compId=ZSC.pdf?ci_sign=e000768eee64e1597a039eaa4d9531c2925a0cf7 Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
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ZSC00AG6811CARL VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5AC8800CC60D2&compId=ZSC.pdf?ci_sign=e000768eee64e1597a039eaa4d9531c2925a0cf7 Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
auf Bestellung 1840 Stücke:
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170+0.42 EUR
290+0.25 EUR
530+0.14 EUR
560+0.13 EUR
Mindestbestellmenge: 170
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IFSC1008ABER100M01 VISHAY s108ab01.pdf Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Operating current: 0.9A
Inductance: 10µH
Type of inductor: wire
Manufacturer series: IFSC
Produkt ist nicht verfügbar
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IFSC1008ABER1R0M01 VISHAY s108ab01.pdf Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Operating current: 2.65A
Inductance: 1µH
Type of inductor: wire
Manufacturer series: IFSC
Produkt ist nicht verfügbar
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GSC00AP4702GARL VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D59CBCE69FA0D2&compId=GSC.pdf?ci_sign=d7e452a815def9627909872e63e3259a2f2c8e7d Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
Produkt ist nicht verfügbar
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CRCW08057K50JNTABC CRCW08057K50JNTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 1400 Stücke:
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1400+0.05 EUR
Mindestbestellmenge: 1400
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MRS16000C3300FCT00 MRS16000C3300FCT00 VISHAY mrs16m25.pdf Category: THT Resistors
Description: Resistor: thin film; THT; 330Ω; 400mW; ±1%; Ø0.5x29mm; Ø1.6x3.6mm
Mounting: THT
Power: 0.4W
Resistance: 330Ω
Tolerance: ±1%
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
Operating temperature: -55...155°C
Type of resistor: thin film
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
397+0.18 EUR
460+0.16 EUR
574+0.12 EUR
794+0.09 EUR
1441+0.05 EUR
1525+0.05 EUR
Mindestbestellmenge: 397
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IRF730APBF VISHAY 91045.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 22A
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IRF730APBF-BE3 VISHAY 91045.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 22A
Produkt ist nicht verfügbar
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IRF730ASPBF VISHAY sihf730a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 22A
Produkt ist nicht verfügbar
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IRF730ASTRLPBF VISHAY sihf730a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 22A
Produkt ist nicht verfügbar
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IRF730STRLPBF VISHAY sihf730s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 38nC
Pulsed drain current: 22A
Produkt ist nicht verfügbar
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VJ0603A180JXACW1BC VJ0603A180JXACW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 4026 Stücke:
Lieferzeit 14-21 Tag (e)
738+0.10 EUR
1852+0.04 EUR
2451+0.03 EUR
2778+0.03 EUR
3290+0.02 EUR
3788+0.02 EUR
4026+0.02 EUR
Mindestbestellmenge: 738
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MAL219367121E3 VISHAY 193pursi.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
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IRF610SPBF VISHAY sih610s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF610STRLPBF VISHAY sih610s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF610STRRPBF VISHAY sih610s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VJ0402V104ZXJCW2BC VJ0402V104ZXJCW2BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA117AB85A2749&compId=00306xVJW2BC.pdf?ci_sign=c67bf94761514bccf5d7f4b66019d360585e001c Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
Kind of capacitor: MLCC
auf Bestellung 7707 Stücke:
Lieferzeit 14-21 Tag (e)
4700+0.02 EUR
Mindestbestellmenge: 4700
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SI7852DP-T1-E3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 80V
Drain current: 7.6A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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TS53YJ103MR10 pVersion=0046&contRep=ZT&docId=E1C05AB5921022F1A6F5005056AB5A8F&compId=ts53yj.pdf?ci_sign=472ba78208969c07d575b9ea951ef69c484074bb
TS53YJ103MR10
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
auf Bestellung 634 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.00 EUR
24+2.99 EUR
45+1.62 EUR
47+1.53 EUR
500+1.47 EUR
Mindestbestellmenge: 18
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CRCW12061M00FKTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW12061M00FKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 200V
auf Bestellung 74800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2400+0.03 EUR
5300+0.01 EUR
7500+0.01 EUR
17300+0.00 EUR
18300+0.00 EUR
Mindestbestellmenge: 2400
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CRCW12061M00JNTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW12061M00JNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Max. operating voltage: 200V
auf Bestellung 19600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2200+0.03 EUR
5200+0.01 EUR
6600+0.01 EUR
14200+0.01 EUR
15100+0.00 EUR
15300+0.00 EUR
Mindestbestellmenge: 2200
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE82CA-E3/54 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282
1.5KE82CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
163+0.44 EUR
208+0.34 EUR
220+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
GRC00DD1021CTNL pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1
GRC00DD1021CTNL
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP21N60LPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP22N60KPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP26N60LPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU4A-E3/45 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809ED455A165C0D2&compId=gbu4a.pdf?ci_sign=3d60bb606adf73b80bd40b73a5850af667159d59
GBU4A-E3/45
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.30 EUR
61+1.17 EUR
77+0.93 EUR
82+0.88 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
GBU4A-E3/51 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809ED455A165C0D2&compId=gbu4a.pdf?ci_sign=3d60bb606adf73b80bd40b73a5850af667159d59
GBU4A-E3/51
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.60 EUR
37+1.94 EUR
85+0.84 EUR
90+0.80 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRF540STRLPBF sihf540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 100V
Drain current: 28A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540STRRPBF sihf540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 100V
Drain current: 28A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ0201G104KXJCW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AC03000001007JAC00 ac_ac-at_ac-ni.pdf
AC03000001007JAC00
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Leads: axial
auf Bestellung 1491 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
143+0.50 EUR
177+0.41 EUR
304+0.24 EUR
321+0.22 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
GSC00AF2211VARL pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D59CBCE69FA0D2&compId=GSC.pdf?ci_sign=d7e452a815def9627909872e63e3259a2f2c8e7d
GSC00AF2211VARL
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Nominal life: 2000h
Manufacturer series: GSC
Height: 10mm
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
210+0.35 EUR
330+0.22 EUR
430+0.17 EUR
440+0.16 EUR
Mindestbestellmenge: 210
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9220PBF IRFR9220PBF.pdf
IRFR9220PBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
77+0.93 EUR
130+0.55 EUR
137+0.52 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9220TRPBF IRFR9220TRPBF.pdf
IRFR9220TRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
60+1.20 EUR
141+0.51 EUR
150+0.48 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
VJ0603A151JXBAC pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ0603A151JXBAC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
538+0.13 EUR
703+0.10 EUR
781+0.09 EUR
1568+0.05 EUR
1656+0.04 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
VJ1111D100JXRAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D1D1E64081A0CE&compId=vjhifreqseries.pdf?ci_sign=234717e3b6edbad469f20dccf69f62576d02beab
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C3V0-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d
BZX55C3V0-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 19926 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
606+0.12 EUR
910+0.08 EUR
1087+0.07 EUR
1629+0.04 EUR
2874+0.03 EUR
3031+0.02 EUR
Mindestbestellmenge: 606
Im Einkaufswagen  Stück im Wert von  UAH
WSL2512R3300FEA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BDE7373FBE4371BF&compId=wsl.pdf?ci_sign=31a158112628ae78e76ed7d0d814a84fdfe5b05a
WSL2512R3300FEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
179+0.40 EUR
192+0.37 EUR
332+0.22 EUR
353+0.20 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
IRF510STRRPBF sihf510s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ALPBF sihf830a.pdf
IRF830ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
54+1.34 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ASPBF sihf830a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ASTRLPBF sihf830a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF830BPBF irf830b.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840ASTRRPBF sihf840.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840LCLPBF description sihf840l.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840LCSPBF sihf840l.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840STRRPBF sihf840s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9530STRLPBF sihf9530.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9530STRRPBF sihf9530.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB13N50APBF tf-irfb13n50apbf.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SISS5808DN-T1-GE3 siss5808dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PR03000202203JAC00 pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa
PR03000202203JAC00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Resistance: 220kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Temperature coefficient: 250ppm/°C
Resistor features: high power and small dimension
Leads: axial
Mounting: THT
Body dimensions: Ø5.2x19.5mm
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
137+0.52 EUR
228+0.31 EUR
260+0.28 EUR
290+0.25 EUR
325+0.22 EUR
340+0.21 EUR
Mindestbestellmenge: 137
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C22-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE587CA2099D64E2469&compId=BZX85C10-TAP.pdf?ci_sign=068488ce13943842c1c81b6b4758f46d16a648e7
BZX85C22-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 7478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
421+0.17 EUR
643+0.11 EUR
747+0.10 EUR
1289+0.06 EUR
1367+0.05 EUR
Mindestbestellmenge: 278
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IRF640PBF-BE3 sihf640.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
43+1.67 EUR
50+1.43 EUR
Mindestbestellmenge: 31
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IRF640STRRPBF sihf640s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BFC233845104 mkp3384x2.pdf
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 630VDC; 300VAC; THT; ±10%; 15mm
Mounting: THT
Operating voltage: 300V AC; 630V DC
Type of capacitor: polypropylene
Capacitance: 0.1µF
Body dimensions: 17.5x6x12mm
Terminal pitch: 15mm
Tolerance: ±10%
Produkt ist nicht verfügbar
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CRCW06032R20FKEA dcrcwe3.pdf
CRCW06032R20FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 75V
auf Bestellung 8079 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
619+0.12 EUR
2273+0.03 EUR
3624+0.02 EUR
4348+0.02 EUR
5556+0.01 EUR
6667+0.01 EUR
7937+0.01 EUR
8065+0.01 EUR
Mindestbestellmenge: 619
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GSC00AP4712AARL pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D59CBCE69FA0D2&compId=GSC.pdf?ci_sign=d7e452a815def9627909872e63e3259a2f2c8e7d
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
Manufacturer series: GSC
Produkt ist nicht verfügbar
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ZSC00AP4712AARL pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5AC8800CC60D2&compId=ZSC.pdf?ci_sign=e000768eee64e1597a039eaa4d9531c2925a0cf7
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
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ZSC00AG6811CARL pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5AC8800CC60D2&compId=ZSC.pdf?ci_sign=e000768eee64e1597a039eaa4d9531c2925a0cf7
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
auf Bestellung 1840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
170+0.42 EUR
290+0.25 EUR
530+0.14 EUR
560+0.13 EUR
Mindestbestellmenge: 170
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IFSC1008ABER100M01 s108ab01.pdf
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Operating current: 0.9A
Inductance: 10µH
Type of inductor: wire
Manufacturer series: IFSC
Produkt ist nicht verfügbar
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IFSC1008ABER1R0M01 s108ab01.pdf
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Operating current: 2.65A
Inductance: 1µH
Type of inductor: wire
Manufacturer series: IFSC
Produkt ist nicht verfügbar
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GSC00AP4702GARL pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D59CBCE69FA0D2&compId=GSC.pdf?ci_sign=d7e452a815def9627909872e63e3259a2f2c8e7d
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
Produkt ist nicht verfügbar
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CRCW08057K50JNTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW08057K50JNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1400+0.05 EUR
Mindestbestellmenge: 1400
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MRS16000C3300FCT00 mrs16m25.pdf
MRS16000C3300FCT00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 330Ω; 400mW; ±1%; Ø0.5x29mm; Ø1.6x3.6mm
Mounting: THT
Power: 0.4W
Resistance: 330Ω
Tolerance: ±1%
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
Operating temperature: -55...155°C
Type of resistor: thin film
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
397+0.18 EUR
460+0.16 EUR
574+0.12 EUR
794+0.09 EUR
1441+0.05 EUR
1525+0.05 EUR
Mindestbestellmenge: 397
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IRF730APBF 91045.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 22A
Produkt ist nicht verfügbar
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IRF730APBF-BE3 91045.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 22A
Produkt ist nicht verfügbar
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IRF730ASPBF sihf730a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 22A
Produkt ist nicht verfügbar
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IRF730ASTRLPBF sihf730a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 22A
Produkt ist nicht verfügbar
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IRF730STRLPBF sihf730s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 38nC
Pulsed drain current: 22A
Produkt ist nicht verfügbar
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VJ0603A180JXACW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ0603A180JXACW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 4026 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
738+0.10 EUR
1852+0.04 EUR
2451+0.03 EUR
2778+0.03 EUR
3290+0.02 EUR
3788+0.02 EUR
4026+0.02 EUR
Mindestbestellmenge: 738
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MAL219367121E3 193pursi.pdf
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
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IRF610SPBF sih610s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF610STRLPBF sih610s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF610STRRPBF sih610s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ0402V104ZXJCW2BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA117AB85A2749&compId=00306xVJW2BC.pdf?ci_sign=c67bf94761514bccf5d7f4b66019d360585e001c
VJ0402V104ZXJCW2BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
Kind of capacitor: MLCC
auf Bestellung 7707 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4700+0.02 EUR
Mindestbestellmenge: 4700
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SI7852DP-T1-E3 si7852dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 80V
Drain current: 7.6A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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