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MAL204217109E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 10µF Operating voltage: 450V DC Body dimensions: Ø12.5x30mm Tolerance: ±20% Service life: 10000h Operating temperature: -40...85°C Leads: axial |
auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL204272109E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 10µF Operating voltage: 450V DC Body dimensions: Ø12.5x30mm Tolerance: ±20% Service life: 10000h Operating temperature: -40...105°C Leads: axial |
auf Bestellung 337 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T15A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SM6T Technology: TransZorb® |
auf Bestellung 1309 Stücke: Lieferzeit 14-21 Tag (e) |
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SISS54DN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A Mounting: SMD On-state resistance: 1.5mΩ Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 42W Kind of channel: enhancement Drain-source voltage: 30V Drain current: 148.5A Pulsed drain current: 300A Polarisation: unipolar Technology: TrenchFET® Case: PowerPAK® 1212-8 Gate-source voltage: -12...16V Gate charge: 72nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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CRCW1206280RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 280Ω; 0.25W; ±1%; -55÷155°C Mounting: SMD Case - inch: 1206 Case - mm: 3216 Tolerance: ±1% Operating temperature: -55...155°C Type of resistor: thick film Resistance: 280Ω Power: 0.25W Max. operating voltage: 200V |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120610K0FKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; -55÷125°C Tolerance: ±1% Resistance: 10kΩ Operating temperature: -55...125°C Power: 0.25W Mounting: SMD Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film |
auf Bestellung 12546 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120610K0FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; -55÷155°C Tolerance: ±1% Resistance: 10kΩ Operating temperature: -55...155°C Power: 0.25W Mounting: SMD Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film |
auf Bestellung 158390 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120610K0JNEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷125°C Tolerance: ±5% Resistance: 10kΩ Operating temperature: -55...125°C Power: 0.25W Mounting: SMD Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film |
auf Bestellung 5723 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120610K0JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷155°C Tolerance: ±5% Resistance: 10kΩ Operating temperature: -55...155°C Power: 0.25W Mounting: SMD Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film |
auf Bestellung 9400 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH6156-2 | VISHAY |
![]() ![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SFH6156-2T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs |
auf Bestellung 2438 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH6156-2X001T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4001-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Quantity in set/package: 5500pcs. Capacitance: 15pF |
auf Bestellung 1442 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54WS-E3-08 | VISHAY |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 0.6A Kind of package: 7 inch reel Max. load current: 0.3A Quantity in set/package: 3000pcs. |
auf Bestellung 1058 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP9140PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41 Case: DO41 Mounting: THT Quantity in set/package: 5500pcs. Kind of package: 13 inch reel Capacitance: 15pF Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.1V Type of diode: rectifying Max. forward impulse current: 30A Max. off-state voltage: 0.4kV |
auf Bestellung 8206 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004-E3/73 | VISHAY |
![]() Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41 Case: DO41 Mounting: THT Kind of package: Ammo Pack Capacitance: 15pF Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.1V Type of diode: rectifying Max. forward impulse current: 30A Max. off-state voltage: 0.4kV |
auf Bestellung 25724 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004GP-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41 Case: DO41 Mounting: THT Quantity in set/package: 5500pcs. Kind of package: 13 inch reel Capacitance: 8pF Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.1V Type of diode: rectifying Max. forward impulse current: 30A Features of semiconductor devices: glass passivated Max. off-state voltage: 0.4kV |
auf Bestellung 4055 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
auf Bestellung 3284 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAT54A-E3-08 | VISHAY |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
auf Bestellung 1315 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54A-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Quantity in set/package: 3000pcs. |
auf Bestellung 2230 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54S-E3-08 | VISHAY |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.24V Max. load current: 0.3A Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.23W Max. forward impulse current: 0.6A |
auf Bestellung 5996 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54S-HE3-08 | VISHAY |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Quantity in set/package: 3000pcs. |
auf Bestellung 3895 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-10BQ100-M3/5BT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.59V Max. forward impulse current: 38A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. |
auf Bestellung 3614 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-10BQ100HM3/5BT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.82V Max. forward impulse current: 780A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. Capacitance: 65pF Application: automotive industry |
auf Bestellung 3225 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307BDS-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -12A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SI2307CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Power dissipation: 1.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1151 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ15A-E3/61 | VISHAY |
![]() Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: 7 inch reel; tape Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
auf Bestellung 3809 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP240PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1930 Stücke: Lieferzeit 14-21 Tag (e) |
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T63XB103KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Track material: cermet IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T63XB Terminal pitch: 2.5x2.5mm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Max. operating voltage: 250V Torque: 1Ncm |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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T63YB103KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Track material: cermet IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T63YB Terminal pitch: 2.5x2.5mm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Max. operating voltage: 250V Torque: 1Ncm |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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T93XB103KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C Track material: cermet IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T93XB Terminal pitch: 2.5x2.5mm Potentiometer standard - inch: 3/8" Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Temperature coefficient: 100ppm/°C Max. operating voltage: 250V Torque: 1,5Ncm Engineering PN: 64Z; 67Z; 3296Z |
auf Bestellung 808 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YB103KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C Track material: cermet IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T93YB Terminal pitch: 2.5x2.5mm Potentiometer standard - inch: 3/8" Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Temperature coefficient: 100ppm/°C Max. operating voltage: 250V Torque: 1,5Ncm Engineering PN: 64Y; 67Y; 3296Y |
auf Bestellung 6074 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5400-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Quantity in set/package: 1400pcs. Capacitance: 30pF Leakage current: 0.5mA |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-36MT60 | VISHAY |
![]() Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 475A Electrical mounting: THT Version: square Max. forward voltage: 1.19V Leads: connectors FASTON Case: D-63 Kind of package: bulk Leads dimensions: 6.3x0.8mm |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHB12N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SIHF12N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SIHP12N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BZX55C13-TAP | VISHAY |
![]() ![]() Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 16740 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP22N50APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 163 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP244PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.7A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 414 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP254PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 92A |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP260PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 554 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP264PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP27N60KPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 500W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE6.8CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
auf Bestellung 649 Stücke: Lieferzeit 14-21 Tag (e) |
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SS34-E3/57T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs. Mounting: SMD Semiconductor structure: single diode Kind of package: 7 inch reel Type of diode: Schottky rectifying Max. forward voltage: 0.5V Case: SMC Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 850pcs. |
auf Bestellung 1530 Stücke: Lieferzeit 14-21 Tag (e) |
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SS34-E3/9AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Mounting: SMD Semiconductor structure: single diode Kind of package: 13 inch reel Leakage current: 20mA Type of diode: Schottky rectifying Max. forward voltage: 0.5V Case: SMC Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 3500pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MBR20100CT-E3/4W | VISHAY |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.75V |
auf Bestellung 793 Stücke: Lieferzeit 14-21 Tag (e) |
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IHLP5050CEER100M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 10µH Resistance: 30.4mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 7A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
IHLP5050CEER1R0M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 1µH Resistance: 3.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 24A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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IHLP5050CEER1R5M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Mounting: SMD Resistance: 5.1mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Type of inductor: wire Operating temperature: -55...125°C Inductance: 1.5µH Operating current: 19A Manufacturer series: IHLP |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IHLP5050CEER2R2M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 2.2µH Resistance: 7.2mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 16A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
IHLP5050CEER3R3M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 3.3µH Resistance: 11mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 12A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
IHLP5050CEER4R7M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 4.7µH Resistance: 14.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 10A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
IHLP5050CEER5R6M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 5.6µH Resistance: 18.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 9.5A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
MAL204217109E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...85°C
Leads: axial
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...85°C
Leads: axial
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.56 EUR |
16+ | 4.75 EUR |
30+ | 2.39 EUR |
32+ | 2.26 EUR |
MAL204272109E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...105°C
Leads: axial
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...105°C
Leads: axial
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.21 EUR |
23+ | 3.22 EUR |
24+ | 3.05 EUR |
SM6T15A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Technology: TransZorb®
auf Bestellung 1309 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
194+ | 0.37 EUR |
216+ | 0.33 EUR |
327+ | 0.22 EUR |
658+ | 0.11 EUR |
705+ | 0.1 EUR |
SISS54DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Mounting: SMD
On-state resistance: 1.5mΩ
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 42W
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 148.5A
Pulsed drain current: 300A
Polarisation: unipolar
Technology: TrenchFET®
Case: PowerPAK® 1212-8
Gate-source voltage: -12...16V
Gate charge: 72nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Mounting: SMD
On-state resistance: 1.5mΩ
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 42W
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 148.5A
Pulsed drain current: 300A
Polarisation: unipolar
Technology: TrenchFET®
Case: PowerPAK® 1212-8
Gate-source voltage: -12...16V
Gate charge: 72nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CRCW1206280RFKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 280Ω; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Tolerance: ±1%
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 280Ω
Power: 0.25W
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 280Ω; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Tolerance: ±1%
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 280Ω
Power: 0.25W
Max. operating voltage: 200V
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.047 EUR |
CRCW120610K0FKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; -55÷125°C
Tolerance: ±1%
Resistance: 10kΩ
Operating temperature: -55...125°C
Power: 0.25W
Mounting: SMD
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; -55÷125°C
Tolerance: ±1%
Resistance: 10kΩ
Operating temperature: -55...125°C
Power: 0.25W
Mounting: SMD
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 12546 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
860+ | 0.083 EUR |
2942+ | 0.024 EUR |
4386+ | 0.016 EUR |
5855+ | 0.012 EUR |
6623+ | 0.011 EUR |
7777+ | 0.0092 EUR |
11014+ | 0.0065 EUR |
11656+ | 0.0061 EUR |
CRCW120610K0FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; -55÷155°C
Tolerance: ±1%
Resistance: 10kΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; -55÷155°C
Tolerance: ±1%
Resistance: 10kΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 158390 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1070+ | 0.067 EUR |
2770+ | 0.026 EUR |
9400+ | 0.0076 EUR |
11390+ | 0.0063 EUR |
20750+ | 0.0034 EUR |
21930+ | 0.0033 EUR |
CRCW120610K0JNEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷125°C
Tolerance: ±5%
Resistance: 10kΩ
Operating temperature: -55...125°C
Power: 0.25W
Mounting: SMD
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷125°C
Tolerance: ±5%
Resistance: 10kΩ
Operating temperature: -55...125°C
Power: 0.25W
Mounting: SMD
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 5723 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
610+ | 0.12 EUR |
1429+ | 0.05 EUR |
2119+ | 0.034 EUR |
2809+ | 0.025 EUR |
3497+ | 0.02 EUR |
4902+ | 0.015 EUR |
5435+ | 0.013 EUR |
5723+ | 0.012 EUR |
CRCW120610K0JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷155°C
Tolerance: ±5%
Resistance: 10kΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷155°C
Tolerance: ±5%
Resistance: 10kΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 9400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.029 EUR |
7700+ | 0.0094 EUR |
9400+ | 0.0076 EUR |
SFH6156-2 | ![]() |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SFH6156-2T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
auf Bestellung 2438 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
169+ | 0.42 EUR |
388+ | 0.18 EUR |
410+ | 0.17 EUR |
SFH6156-2X001T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4001-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
auf Bestellung 1442 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
596+ | 0.12 EUR |
646+ | 0.11 EUR |
792+ | 0.09 EUR |
1442+ | 0.05 EUR |
BAT54WS-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Max. load current: 0.3A
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Max. load current: 0.3A
Quantity in set/package: 3000pcs.
auf Bestellung 1058 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
404+ | 0.18 EUR |
469+ | 0.15 EUR |
596+ | 0.12 EUR |
1058+ | 0.067 EUR |
IRFP9140PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
24+ | 3.07 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
1N4004-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Case: DO41
Mounting: THT
Quantity in set/package: 5500pcs.
Kind of package: 13 inch reel
Capacitance: 15pF
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Case: DO41
Mounting: THT
Quantity in set/package: 5500pcs.
Kind of package: 13 inch reel
Capacitance: 15pF
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
auf Bestellung 8206 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
511+ | 0.14 EUR |
676+ | 0.11 EUR |
774+ | 0.092 EUR |
2025+ | 0.035 EUR |
2137+ | 0.033 EUR |
1N4004-E3/73 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Case: DO41
Mounting: THT
Kind of package: Ammo Pack
Capacitance: 15pF
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Case: DO41
Mounting: THT
Kind of package: Ammo Pack
Capacitance: 15pF
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
auf Bestellung 25724 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
400+ | 0.18 EUR |
587+ | 0.12 EUR |
765+ | 0.094 EUR |
2184+ | 0.033 EUR |
2305+ | 0.031 EUR |
1N4004GP-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Case: DO41
Mounting: THT
Quantity in set/package: 5500pcs.
Kind of package: 13 inch reel
Capacitance: 8pF
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Case: DO41
Mounting: THT
Quantity in set/package: 5500pcs.
Kind of package: 13 inch reel
Capacitance: 8pF
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.4kV
auf Bestellung 4055 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
127+ | 0.57 EUR |
190+ | 0.38 EUR |
253+ | 0.28 EUR |
544+ | 0.13 EUR |
575+ | 0.12 EUR |
IRF640PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 3284 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
38+ | 1.93 EUR |
114+ | 0.63 EUR |
120+ | 0.6 EUR |
IRF640SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 1240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.35 EUR |
33+ | 2.17 EUR |
76+ | 0.94 EUR |
80+ | 0.9 EUR |
IRF640STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT54A-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1315 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
589+ | 0.12 EUR |
715+ | 0.1 EUR |
875+ | 0.082 EUR |
1315+ | 0.054 EUR |
BAT54A-HE3-08 |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
auf Bestellung 2230 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
705+ | 0.1 EUR |
1115+ | 0.064 EUR |
1325+ | 0.054 EUR |
1405+ | 0.051 EUR |
BAT54S-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
auf Bestellung 5996 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
562+ | 0.13 EUR |
848+ | 0.084 EUR |
1109+ | 0.064 EUR |
1924+ | 0.037 EUR |
2033+ | 0.035 EUR |
BAT54S-HE3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
auf Bestellung 3895 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
625+ | 0.11 EUR |
1000+ | 0.072 EUR |
1230+ | 0.058 EUR |
1300+ | 0.055 EUR |
VS-10BQ100-M3/5BT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
auf Bestellung 3614 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
196+ | 0.37 EUR |
212+ | 0.34 EUR |
262+ | 0.27 EUR |
290+ | 0.25 EUR |
486+ | 0.15 EUR |
516+ | 0.14 EUR |
VS-10BQ100HM3/5BT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
auf Bestellung 3225 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
178+ | 0.4 EUR |
371+ | 0.19 EUR |
394+ | 0.18 EUR |
SI2307BDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI2307CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1151 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
126+ | 0.57 EUR |
136+ | 0.53 EUR |
172+ | 0.42 EUR |
374+ | 0.19 EUR |
394+ | 0.18 EUR |
SMAJ15A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
auf Bestellung 3809 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
283+ | 0.25 EUR |
358+ | 0.2 EUR |
439+ | 0.16 EUR |
532+ | 0.13 EUR |
758+ | 0.094 EUR |
807+ | 0.089 EUR |
820+ | 0.087 EUR |
1000+ | 0.086 EUR |
IRFP240PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1930 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.57 EUR |
31+ | 2.37 EUR |
55+ | 1.3 EUR |
58+ | 1.24 EUR |
T63XB103KT20 |
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Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63XB
Terminal pitch: 2.5x2.5mm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Torque: 1Ncm
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63XB
Terminal pitch: 2.5x2.5mm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Torque: 1Ncm
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.56 EUR |
18+ | 3.98 EUR |
26+ | 2.82 EUR |
27+ | 2.66 EUR |
T63YB103KT20 |
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Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63YB
Terminal pitch: 2.5x2.5mm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Torque: 1Ncm
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63YB
Terminal pitch: 2.5x2.5mm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Torque: 1Ncm
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
30+ | 2.39 EUR |
32+ | 2.26 EUR |
T93XB103KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Torque: 1,5Ncm
Engineering PN: 64Z; 67Z; 3296Z
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Torque: 1,5Ncm
Engineering PN: 64Z; 67Z; 3296Z
auf Bestellung 808 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
49+ | 1.49 EUR |
58+ | 1.24 EUR |
61+ | 1.17 EUR |
200+ | 1.14 EUR |
T93YB103KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Torque: 1,5Ncm
Engineering PN: 64Y; 67Y; 3296Y
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Torque: 1,5Ncm
Engineering PN: 64Y; 67Y; 3296Y
auf Bestellung 6074 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.29 EUR |
40+ | 1.83 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
1N5400-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
VS-36MT60 |
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Hersteller: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Case: D-63
Kind of package: bulk
Leads dimensions: 6.3x0.8mm
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Case: D-63
Kind of package: bulk
Leads dimensions: 6.3x0.8mm
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 16 EUR |
10+ | 15.46 EUR |
SIHB12N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHB12N60ET1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHF12N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHP12N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX55C13-TAP | ![]() |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 16740 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1130+ | 0.064 EUR |
2230+ | 0.032 EUR |
2780+ | 0.026 EUR |
2960+ | 0.024 EUR |
3150+ | 0.023 EUR |
10000+ | 0.022 EUR |
IRFP22N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.11 EUR |
25+ | 2.87 EUR |
27+ | 2.73 EUR |
IRFP244PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.36 EUR |
33+ | 2.19 EUR |
35+ | 2.06 EUR |
50+ | 1.46 EUR |
53+ | 1.37 EUR |
IRFP250PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.83 EUR |
28+ | 2.56 EUR |
45+ | 1.6 EUR |
48+ | 1.5 EUR |
IRFP254PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.89 EUR |
35+ | 2.04 EUR |
38+ | 1.93 EUR |
IRFP260PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 554 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
23+ | 3.16 EUR |
24+ | 2.99 EUR |
500+ | 2.87 EUR |
IRFP264PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.83 EUR |
25+ | 2.86 EUR |
27+ | 2.7 EUR |
IRFP27N60KPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
1.5KE6.8CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 649 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
134+ | 0.53 EUR |
197+ | 0.36 EUR |
207+ | 0.35 EUR |
SS34-E3/57T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Semiconductor structure: single diode
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
Case: SMC
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Semiconductor structure: single diode
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
Case: SMC
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
166+ | 0.43 EUR |
417+ | 0.17 EUR |
439+ | 0.16 EUR |
SS34-E3/9AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 20mA
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
Case: SMC
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 20mA
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
Case: SMC
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR20100CT-E3/4W |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.75V
auf Bestellung 793 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.7 EUR |
48+ | 1.5 EUR |
52+ | 1.4 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
500+ | 0.97 EUR |
IHLP5050CEER100M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 30.4mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 7A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 30.4mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 7A
Tolerance: ±20%
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IHLP5050CEER1R0M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 3.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 3.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Tolerance: ±20%
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IHLP5050CEER1R5M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Resistance: 5.1mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1.5µH
Operating current: 19A
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Resistance: 5.1mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1.5µH
Operating current: 19A
Manufacturer series: IHLP
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
79+ | 0.91 EUR |
87+ | 0.83 EUR |
91+ | 0.79 EUR |
100+ | 0.76 EUR |
250+ | 0.73 EUR |
500+ | 0.71 EUR |
IHLP5050CEER2R2M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 7.2mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 7.2mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Tolerance: ±20%
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IHLP5050CEER3R3M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 11mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 11mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Tolerance: ±20%
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IHLP5050CEER4R7M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 14.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 14.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Tolerance: ±20%
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IHLP5050CEER5R6M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 5.6µH
Resistance: 18.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 5.6µH
Resistance: 18.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Tolerance: ±20%
Produkt ist nicht verfügbar
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