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IHLP5050CEER6R8M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04 Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 19.8mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Tolerance: ±20%
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IHLP5050CEERR47M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04 Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
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IHLP5050CEERR68M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04 Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
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IHLP5050EZER100M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
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IHLP5050EZER2R2M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
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IHLP5050EZER3R3M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
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IHLP5050EZER4R7M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
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IHLP5050EZER6R8M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
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IHLP5050FDER100M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 16.4mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 10A
Tolerance: ±20%
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IHLP5050FDER1R0M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 1.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Tolerance: ±20%
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IHLP5050FDER2R2M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 3.5mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Tolerance: ±20%
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IHLP5050FDER3R3M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 5.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Tolerance: ±20%
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2N7002-T1-E3 2N7002-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F9687FD84F4469&compId=2N7002-T1-E3.pdf?ci_sign=d4ff830a64f567bc4e9db74e5d3beab269f72df4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
269+0.27 EUR
Mindestbestellmenge: 269
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2N7002K-T1-E3 2N7002K-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEE91AFF04704143&compId=2n7002k.pdf?ci_sign=f6ef7c8e7b03b582cc01d4ae751f2afbffa91902 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3610 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
397+0.18 EUR
543+0.13 EUR
620+0.12 EUR
733+0.098 EUR
1583+0.045 EUR
1673+0.043 EUR
Mindestbestellmenge: 239
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2N7002K-T1-GE3 2N7002K-T1-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B372BE79E0A0C7&compId=2n7002k.pdf?ci_sign=2b3768eb8c0afdb1821adcf458f5f71283255059 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 5034 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
363+0.2 EUR
417+0.17 EUR
589+0.12 EUR
650+0.11 EUR
1667+0.043 EUR
1725+0.041 EUR
Mindestbestellmenge: 278
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SIHB15N65E-GE3 VISHAY sihb15n65e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHF15N65E-GE3 VISHAY sihf15n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP15N65E-GE3 VISHAY sihp15n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SF1600-TAP SF1600-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCB037BD61A6E143&compId=sf1200_1600.pdf?ci_sign=0f55a1b769b5efe582ed01f23a3d8fe8f04f9ed6 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Max. forward voltage: 3.4V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 1.6kV
Kind of package: Ammo Pack
Case: SOD57
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
auf Bestellung 2238 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
178+0.4 EUR
186+0.38 EUR
201+0.36 EUR
250+0.34 EUR
Mindestbestellmenge: 132
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SS16-E3/5AT SS16-E3/5AT VISHAY ss12.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
auf Bestellung 4836 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
650+0.11 EUR
715+0.1 EUR
748+0.096 EUR
1011+0.071 EUR
1069+0.067 EUR
Mindestbestellmenge: 455
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SS16-E3/61T SS16-E3/61T VISHAY ss12.pdf description Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
auf Bestellung 5311 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
334+0.21 EUR
365+0.2 EUR
510+0.14 EUR
1097+0.065 EUR
1158+0.062 EUR
Mindestbestellmenge: 264
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SS16HE3_B/H SS16HE3_B/H VISHAY ss12.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
auf Bestellung 7678 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
295+0.24 EUR
336+0.21 EUR
379+0.19 EUR
432+0.17 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 218
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CRCW04024K70FKED CRCW04024K70FKED VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED684EBD76B46A5B1BF&compId=crcw0402_dbc.pdf?ci_sign=d448fa46199ecd64cdf820cbac3a97b8baab4447 Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
585+0.12 EUR
1300+0.054 EUR
Mindestbestellmenge: 585
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CRCW04024K70FKTDBC CRCW04024K70FKTDBC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED684EBD76B46A5B1BF&compId=crcw0402_dbc.pdf?ci_sign=d448fa46199ecd64cdf820cbac3a97b8baab4447 Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 31400 Stücke:
Lieferzeit 14-21 Tag (e)
3700+0.019 EUR
9700+0.0074 EUR
31400+0.0023 EUR
Mindestbestellmenge: 3700
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CRCW0603240RFKTABC CRCW0603240RFKTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 240Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 25700 Stücke:
Lieferzeit 14-21 Tag (e)
2300+0.032 EUR
4400+0.017 EUR
7300+0.0099 EUR
16700+0.0043 EUR
18200+0.0039 EUR
Mindestbestellmenge: 2300
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IRF840PBF IRF840PBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A0ED2C32BC469&compId=IRF840PBF.pdf?ci_sign=32d8bd5bce644db302139fe2d078b7048afcda96 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 2632 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
41+1.74 EUR
48+1.52 EUR
88+0.82 EUR
93+0.77 EUR
Mindestbestellmenge: 38
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BZX55B10-TAP BZX55B10-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
auf Bestellung 3416 Stücke:
Lieferzeit 14-21 Tag (e)
1220+0.059 EUR
2070+0.035 EUR
2330+0.031 EUR
2695+0.027 EUR
2850+0.025 EUR
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GRC00JG4702W00L GRC00JG4702W00L VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Operating temperature: -40...105°C
Capacitance: 47µF
Dimensions: 16x25mm
Tolerance: ±20%
Operating voltage: 450V DC
Service life: 2000h
Type of capacitor: electrolytic
Mounting: THT
auf Bestellung 2072 Stücke:
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51+1.42 EUR
89+0.81 EUR
139+0.52 EUR
146+0.49 EUR
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GRC00JG3321E00L GRC00JG3321E00L VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
auf Bestellung 206 Stücke:
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60+1.19 EUR
103+0.69 EUR
172+0.42 EUR
182+0.39 EUR
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IRF530PBF IRF530PBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8957B5DD820469&compId=IRF530PBF.pdf?ci_sign=754f581ef87af839e1b84dd0c296359fa0c06f27 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5526 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
141+0.51 EUR
178+0.4 EUR
188+0.38 EUR
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IRF530SPBF IRF530SPBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B3880C315E20C7&compId=irf530s.pdf?ci_sign=25cc28147d53b50073ee07f93d752633e09927be description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX55C10-TAP BZX55C10-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d description Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2759 Stücke:
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556+0.13 EUR
807+0.089 EUR
1042+0.069 EUR
1334+0.054 EUR
1713+0.042 EUR
1931+0.037 EUR
2674+0.027 EUR
2759+0.026 EUR
Mindestbestellmenge: 556
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BZX55C12-TAP BZX55C12-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 17616 Stücke:
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500+0.14 EUR
676+0.11 EUR
1109+0.064 EUR
1386+0.052 EUR
2381+0.03 EUR
2513+0.028 EUR
5000+0.027 EUR
Mindestbestellmenge: 500
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MUR460-E3/54 MUR460-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCAF99B3AA72C143&compId=mur440.pdf?ci_sign=2d9ec93ce14c709c83ad8262088fd0c5f54debbe Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
auf Bestellung 628 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
145+0.5 EUR
207+0.35 EUR
219+0.33 EUR
500+0.31 EUR
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1N4007-E3/54 1N4007-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9A3B92D5C43E28&compId=1n400x.pdf?ci_sign=d5e5168e8a82980ad343eab904389a6030f9caca Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
auf Bestellung 9448 Stücke:
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358+0.2 EUR
486+0.15 EUR
755+0.095 EUR
968+0.074 EUR
2017+0.035 EUR
2137+0.033 EUR
Mindestbestellmenge: 358
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1N4007-E3/73 1N4007-E3/73 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9A3B92D5C43E28&compId=1n400x.pdf?ci_sign=d5e5168e8a82980ad343eab904389a6030f9caca Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
auf Bestellung 4210 Stücke:
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313+0.23 EUR
385+0.19 EUR
463+0.15 EUR
849+0.084 EUR
2041+0.035 EUR
2165+0.033 EUR
Mindestbestellmenge: 313
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293D476X0025D2TE3 293D476X0025D2TE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA498C68BFA1D40CE&compId=293d.pdf?ci_sign=37f3954d4d680b33dcccb5a879794ca899e3b7ba Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
auf Bestellung 1604 Stücke:
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54+1.33 EUR
82+0.88 EUR
141+0.51 EUR
149+0.48 EUR
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293D476X9025D2TE3 293D476X9025D2TE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA498C68BFA1D40CE&compId=293d.pdf?ci_sign=37f3954d4d680b33dcccb5a879794ca899e3b7ba Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
auf Bestellung 1864 Stücke:
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88+0.82 EUR
135+0.53 EUR
190+0.38 EUR
200+0.36 EUR
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VJ1206Y104KXAMT VJ1206Y104KXAMT VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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VJ1206Y104KXAPW1BC VJ1206Y104KXAPW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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VJ1206Y104KXACW1BC VJ1206Y104KXACW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 20628 Stücke:
Lieferzeit 14-21 Tag (e)
582+0.12 EUR
1725+0.041 EUR
1977+0.036 EUR
2193+0.033 EUR
3473+0.021 EUR
3650+0.02 EUR
12000+0.019 EUR
Mindestbestellmenge: 582
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SM6T6V8A-E3/52 SM6T6V8A-E3/52 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA290988BB91420C7&compId=sm6t.pdf?ci_sign=6a01ce312076e467c6748a036c14f9e36ba96088 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SMB
Max. off-state voltage: 5.8V
Kind of package: 7 inch reel; tape
Max. forward impulse current: 57A
Tolerance: ±5%
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Technology: TransZorb®
Leakage current: 1mA
auf Bestellung 173 Stücke:
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173+0.41 EUR
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1.5KE6.8A-E3/54 1.5KE6.8A-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282 Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1140 Stücke:
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99+0.73 EUR
120+0.6 EUR
227+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 99
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SI4800BDY-T1-E3 SI4800BDY-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C7AE4786FA469&compId=SI4800BDY-E3.pdf?ci_sign=ef227de5271d149492adc5fd67359e1457b08a4a description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Drain-source voltage: 30V
Drain current: 7A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
auf Bestellung 1845 Stücke:
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95+0.76 EUR
118+0.61 EUR
195+0.37 EUR
206+0.35 EUR
Mindestbestellmenge: 95
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1N4148-TAP 1N4148-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BF3E83CEE16469&compId=1N4148-TAP.pdf?ci_sign=a8723b27eb03eb56d3133382c4f4f534ba3d3c82 Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
auf Bestellung 45750 Stücke:
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585+0.12 EUR
926+0.077 EUR
1263+0.057 EUR
1454+0.049 EUR
1743+0.041 EUR
1993+0.036 EUR
2284+0.031 EUR
5320+0.013 EUR
Mindestbestellmenge: 585
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VS-HFA25TB60-M3 VS-HFA25TB60-M3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A498FB525C124143&compId=vs-hfa25tb60-m3.pdf?ci_sign=d952c5c9f1d2e49aa0ea2d1e568f6e67c21cae9f Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 55pF
Kind of package: tube
Max. forward impulse current: 225A
Case: TO220AC
Max. forward voltage: 1.3V
Reverse recovery time: 23ns
auf Bestellung 564 Stücke:
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25+2.95 EUR
27+2.66 EUR
28+2.56 EUR
31+2.37 EUR
50+2.32 EUR
Mindestbestellmenge: 25
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SIHA20N50E-GE3 VISHAY siha20n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB20N50E-GE3 VISHAY sihb20n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHG20N50E-GE3 VISHAY sihg20n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SiHH20N50E-T1-GE3 VISHAY sihh20n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP20N50E-GE3 VISHAY sihp20n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BPW34 BPW34 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B0FCCA6A51AA6469&compId=BPW34-V.pdf?ci_sign=afbb8d1d6e7f603907df758799140cf7a355860d Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Viewing angle: 65°
Radiant power: 215mW
auf Bestellung 1889 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
104+0.69 EUR
115+0.62 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 55
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BPW34S BPW34S VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B0FCCA6A51AA6469&compId=BPW34-V.pdf?ci_sign=afbb8d1d6e7f603907df758799140cf7a355860d description Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Radiant power: 215mW
auf Bestellung 396 Stücke:
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114+0.63 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 114
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VBPW34FAS VBPW34FAS VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABADDE02C33B3E27&compId=VBPW34FAS-DTE.pdf?ci_sign=233550b0e0ec54ca78bd7fee848b475a071a5047 Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
LED lens: black
auf Bestellung 802 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
85+0.85 EUR
194+0.37 EUR
205+0.35 EUR
Mindestbestellmenge: 59
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VBPW34S VBPW34S VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABADDFB720BBFE27&compId=VBPW34S-DTE.pdf?ci_sign=3621e58dcea777217ee555b573d074bc09c3ea62 Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
auf Bestellung 2195 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
87+0.83 EUR
194+0.37 EUR
205+0.35 EUR
1000+0.34 EUR
Mindestbestellmenge: 61
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MAL213661101E3 MAL213661101E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8FD02614C950E0C4&compId=136RVI.PDF?ci_sign=f3f08a0a3667306c830919d1612f7d55110c1a61 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -55...105°C
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
50+1.44 EUR
113+0.63 EUR
120+0.6 EUR
Mindestbestellmenge: 39
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IRF9630PBF IRF9630PBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A45B068556469&compId=IRF9630PBF.pdf?ci_sign=e2cb1b3308e421be576b913d5f89ef44f64440d7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
42+1.72 EUR
82+0.87 EUR
87+0.83 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630SPBF IRF9630SPBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD90AABD95160143&compId=IRF9630S.pdf?ci_sign=b0102a62d4142948f664c7b9568ff7dcac603c74 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
42+1.72 EUR
87+0.83 EUR
91+0.79 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9630GPBF IRFI9630GPBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8AC132D3002469&compId=IRFI9630GPBF.pdf?ci_sign=fb760884a4196e9c1bd01f7ae8a92d2afdcb62ea Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Polarisation: unipolar
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Kind of package: tube
Drain-source voltage: -200V
Drain current: -2.7A
Gate charge: 29nC
On-state resistance: 0.8Ω
Power dissipation: 35W
Gate-source voltage: ±20V
Case: TO220FP
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
52+1.39 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
SIHJ7N65E-T1-GE3 VISHAY sihj7n65e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IHLP5050CEER6R8M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 19.8mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050CEERR47M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHLP5050CEERR68M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER100M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHLP5050EZER2R2M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHLP5050EZER3R3M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER4R7M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHLP5050EZER6R8M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050FDER100M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 16.4mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 10A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHLP5050FDER1R0M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 1.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHLP5050FDER2R2M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 3.5mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHLP5050FDER3R3M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 5.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Tolerance: ±20%
Produkt ist nicht verfügbar
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2N7002-T1-E3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F9687FD84F4469&compId=2N7002-T1-E3.pdf?ci_sign=d4ff830a64f567bc4e9db74e5d3beab269f72df4
2N7002-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
269+0.27 EUR
Mindestbestellmenge: 269
Im Einkaufswagen  Stück im Wert von  UAH
2N7002K-T1-E3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEE91AFF04704143&compId=2n7002k.pdf?ci_sign=f6ef7c8e7b03b582cc01d4ae751f2afbffa91902
2N7002K-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
397+0.18 EUR
543+0.13 EUR
620+0.12 EUR
733+0.098 EUR
1583+0.045 EUR
1673+0.043 EUR
Mindestbestellmenge: 239
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2N7002K-T1-GE3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B372BE79E0A0C7&compId=2n7002k.pdf?ci_sign=2b3768eb8c0afdb1821adcf458f5f71283255059
2N7002K-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 5034 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
363+0.2 EUR
417+0.17 EUR
589+0.12 EUR
650+0.11 EUR
1667+0.043 EUR
1725+0.041 EUR
Mindestbestellmenge: 278
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SIHB15N65E-GE3 sihb15n65e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHF15N65E-GE3 sihf15n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP15N65E-GE3 sihp15n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SF1600-TAP pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCB037BD61A6E143&compId=sf1200_1600.pdf?ci_sign=0f55a1b769b5efe582ed01f23a3d8fe8f04f9ed6
SF1600-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Max. forward voltage: 3.4V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 1.6kV
Kind of package: Ammo Pack
Case: SOD57
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
auf Bestellung 2238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
178+0.4 EUR
186+0.38 EUR
201+0.36 EUR
250+0.34 EUR
Mindestbestellmenge: 132
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SS16-E3/5AT ss12.pdf
SS16-E3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
auf Bestellung 4836 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
650+0.11 EUR
715+0.1 EUR
748+0.096 EUR
1011+0.071 EUR
1069+0.067 EUR
Mindestbestellmenge: 455
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SS16-E3/61T description ss12.pdf
SS16-E3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
auf Bestellung 5311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
334+0.21 EUR
365+0.2 EUR
510+0.14 EUR
1097+0.065 EUR
1158+0.062 EUR
Mindestbestellmenge: 264
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SS16HE3_B/H ss12.pdf
SS16HE3_B/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
auf Bestellung 7678 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
295+0.24 EUR
336+0.21 EUR
379+0.19 EUR
432+0.17 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 218
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CRCW04024K70FKED pVersion=0046&contRep=ZT&docId=005056AB752F1ED684EBD76B46A5B1BF&compId=crcw0402_dbc.pdf?ci_sign=d448fa46199ecd64cdf820cbac3a97b8baab4447
CRCW04024K70FKED
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
1300+0.054 EUR
Mindestbestellmenge: 585
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CRCW04024K70FKTDBC pVersion=0046&contRep=ZT&docId=005056AB752F1ED684EBD76B46A5B1BF&compId=crcw0402_dbc.pdf?ci_sign=d448fa46199ecd64cdf820cbac3a97b8baab4447
CRCW04024K70FKTDBC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 31400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3700+0.019 EUR
9700+0.0074 EUR
31400+0.0023 EUR
Mindestbestellmenge: 3700
Im Einkaufswagen  Stück im Wert von  UAH
CRCW0603240RFKTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW0603240RFKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 240Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 25700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2300+0.032 EUR
4400+0.017 EUR
7300+0.0099 EUR
16700+0.0043 EUR
18200+0.0039 EUR
Mindestbestellmenge: 2300
Im Einkaufswagen  Stück im Wert von  UAH
IRF840PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A0ED2C32BC469&compId=IRF840PBF.pdf?ci_sign=32d8bd5bce644db302139fe2d078b7048afcda96
IRF840PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 2632 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
41+1.74 EUR
48+1.52 EUR
88+0.82 EUR
93+0.77 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B10-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d
BZX55B10-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
auf Bestellung 3416 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1220+0.059 EUR
2070+0.035 EUR
2330+0.031 EUR
2695+0.027 EUR
2850+0.025 EUR
Mindestbestellmenge: 1220
Im Einkaufswagen  Stück im Wert von  UAH
GRC00JG4702W00L pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1
GRC00JG4702W00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Operating temperature: -40...105°C
Capacitance: 47µF
Dimensions: 16x25mm
Tolerance: ±20%
Operating voltage: 450V DC
Service life: 2000h
Type of capacitor: electrolytic
Mounting: THT
auf Bestellung 2072 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
89+0.81 EUR
139+0.52 EUR
146+0.49 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
GRC00JG3321E00L pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1
GRC00JG3321E00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.19 EUR
103+0.69 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IRF530PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8957B5DD820469&compId=IRF530PBF.pdf?ci_sign=754f581ef87af839e1b84dd0c296359fa0c06f27
IRF530PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5526 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
141+0.51 EUR
178+0.4 EUR
188+0.38 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
IRF530SPBF description pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B3880C315E20C7&compId=irf530s.pdf?ci_sign=25cc28147d53b50073ee07f93d752633e09927be
IRF530SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C10-TAP description pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d
BZX55C10-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
807+0.089 EUR
1042+0.069 EUR
1334+0.054 EUR
1713+0.042 EUR
1931+0.037 EUR
2674+0.027 EUR
2759+0.026 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C12-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d
BZX55C12-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 17616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
676+0.11 EUR
1109+0.064 EUR
1386+0.052 EUR
2381+0.03 EUR
2513+0.028 EUR
5000+0.027 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MUR460-E3/54 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCAF99B3AA72C143&compId=mur440.pdf?ci_sign=2d9ec93ce14c709c83ad8262088fd0c5f54debbe
MUR460-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
auf Bestellung 628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
145+0.5 EUR
207+0.35 EUR
219+0.33 EUR
500+0.31 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
1N4007-E3/54 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9A3B92D5C43E28&compId=1n400x.pdf?ci_sign=d5e5168e8a82980ad343eab904389a6030f9caca
1N4007-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
auf Bestellung 9448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
486+0.15 EUR
755+0.095 EUR
968+0.074 EUR
2017+0.035 EUR
2137+0.033 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
1N4007-E3/73 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9A3B92D5C43E28&compId=1n400x.pdf?ci_sign=d5e5168e8a82980ad343eab904389a6030f9caca
1N4007-E3/73
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
auf Bestellung 4210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
385+0.19 EUR
463+0.15 EUR
849+0.084 EUR
2041+0.035 EUR
2165+0.033 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
293D476X0025D2TE3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA498C68BFA1D40CE&compId=293d.pdf?ci_sign=37f3954d4d680b33dcccb5a879794ca899e3b7ba
293D476X0025D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
auf Bestellung 1604 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
82+0.88 EUR
141+0.51 EUR
149+0.48 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
293D476X9025D2TE3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA498C68BFA1D40CE&compId=293d.pdf?ci_sign=37f3954d4d680b33dcccb5a879794ca899e3b7ba
293D476X9025D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
auf Bestellung 1864 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
135+0.53 EUR
190+0.38 EUR
200+0.36 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
VJ1206Y104KXAMT pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ1206Y104KXAMT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ1206Y104KXAPW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ1206Y104KXAPW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ1206Y104KXACW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ1206Y104KXACW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 20628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
582+0.12 EUR
1725+0.041 EUR
1977+0.036 EUR
2193+0.033 EUR
3473+0.021 EUR
3650+0.02 EUR
12000+0.019 EUR
Mindestbestellmenge: 582
Im Einkaufswagen  Stück im Wert von  UAH
SM6T6V8A-E3/52 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA290988BB91420C7&compId=sm6t.pdf?ci_sign=6a01ce312076e467c6748a036c14f9e36ba96088
SM6T6V8A-E3/52
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SMB
Max. off-state voltage: 5.8V
Kind of package: 7 inch reel; tape
Max. forward impulse current: 57A
Tolerance: ±5%
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Technology: TransZorb®
Leakage current: 1mA
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
Mindestbestellmenge: 173
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1.5KE6.8A-E3/54 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282
1.5KE6.8A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
120+0.6 EUR
227+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 99
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SI4800BDY-T1-E3 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C7AE4786FA469&compId=SI4800BDY-E3.pdf?ci_sign=ef227de5271d149492adc5fd67359e1457b08a4a
SI4800BDY-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Drain-source voltage: 30V
Drain current: 7A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
auf Bestellung 1845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
118+0.61 EUR
195+0.37 EUR
206+0.35 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
1N4148-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BF3E83CEE16469&compId=1N4148-TAP.pdf?ci_sign=a8723b27eb03eb56d3133382c4f4f534ba3d3c82
1N4148-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
auf Bestellung 45750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
926+0.077 EUR
1263+0.057 EUR
1454+0.049 EUR
1743+0.041 EUR
1993+0.036 EUR
2284+0.031 EUR
5320+0.013 EUR
Mindestbestellmenge: 585
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VS-HFA25TB60-M3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A498FB525C124143&compId=vs-hfa25tb60-m3.pdf?ci_sign=d952c5c9f1d2e49aa0ea2d1e568f6e67c21cae9f
VS-HFA25TB60-M3
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 55pF
Kind of package: tube
Max. forward impulse current: 225A
Case: TO220AC
Max. forward voltage: 1.3V
Reverse recovery time: 23ns
auf Bestellung 564 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
27+2.66 EUR
28+2.56 EUR
31+2.37 EUR
50+2.32 EUR
Mindestbestellmenge: 25
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SIHA20N50E-GE3 siha20n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB20N50E-GE3 sihb20n50e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHG20N50E-GE3 sihg20n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SiHH20N50E-T1-GE3 sihh20n50e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP20N50E-GE3 sihp20n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BPW34 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B0FCCA6A51AA6469&compId=BPW34-V.pdf?ci_sign=afbb8d1d6e7f603907df758799140cf7a355860d
BPW34
Hersteller: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Viewing angle: 65°
Radiant power: 215mW
auf Bestellung 1889 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
104+0.69 EUR
115+0.62 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
BPW34S description pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B0FCCA6A51AA6469&compId=BPW34-V.pdf?ci_sign=afbb8d1d6e7f603907df758799140cf7a355860d
BPW34S
Hersteller: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Radiant power: 215mW
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 114
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VBPW34FAS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABADDE02C33B3E27&compId=VBPW34FAS-DTE.pdf?ci_sign=233550b0e0ec54ca78bd7fee848b475a071a5047
VBPW34FAS
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
LED lens: black
auf Bestellung 802 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
85+0.85 EUR
194+0.37 EUR
205+0.35 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
VBPW34S pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABADDFB720BBFE27&compId=VBPW34S-DTE.pdf?ci_sign=3621e58dcea777217ee555b573d074bc09c3ea62
VBPW34S
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
auf Bestellung 2195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
87+0.83 EUR
194+0.37 EUR
205+0.35 EUR
1000+0.34 EUR
Mindestbestellmenge: 61
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MAL213661101E3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8FD02614C950E0C4&compId=136RVI.PDF?ci_sign=f3f08a0a3667306c830919d1612f7d55110c1a61
MAL213661101E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -55...105°C
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
50+1.44 EUR
113+0.63 EUR
120+0.6 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A45B068556469&compId=IRF9630PBF.pdf?ci_sign=e2cb1b3308e421be576b913d5f89ef44f64440d7
IRF9630PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
42+1.72 EUR
82+0.87 EUR
87+0.83 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630SPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD90AABD95160143&compId=IRF9630S.pdf?ci_sign=b0102a62d4142948f664c7b9568ff7dcac603c74
IRF9630SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
42+1.72 EUR
87+0.83 EUR
91+0.79 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9630GPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8AC132D3002469&compId=IRFI9630GPBF.pdf?ci_sign=fb760884a4196e9c1bd01f7ae8a92d2afdcb62ea
IRFI9630GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Polarisation: unipolar
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Kind of package: tube
Drain-source voltage: -200V
Drain current: -2.7A
Gate charge: 29nC
On-state resistance: 0.8Ω
Power dissipation: 35W
Gate-source voltage: ±20V
Case: TO220FP
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
52+1.39 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
SIHJ7N65E-T1-GE3 sihj7n65e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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