| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IRF510STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A |
Produkt ist nicht verfügbar |
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IRF830ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 934 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF830ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF830ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF830BPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF840ASTRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF840LCLPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF840LCSPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF840STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF9530STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF9530STRRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRFB13N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SISS5808DN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A Case: PowerPAK® 1212-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Drain current: 66.6A Drain-source voltage: 80V Gate charge: 24nC On-state resistance: 11mΩ Gate-source voltage: ±20V Power dissipation: 65.7W Pulsed drain current: 150A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BZX85C22-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 22V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 4838 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640PBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF640STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GSC00AP4702GARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 47µF Operating voltage: 400V DC Tolerance: ±20% Operating temperature: -40...105°C Manufacturer series: GSC Height: 21.5mm Nominal life: 2000h Dimensions: 18x21.5mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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VJ0603A180JXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 18pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 2752 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7852DP-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 1.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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PE30L0FL472KAB | VISHAY |
Category: Cermet single turn potentiometersDescription: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear Resistance: 4.7kΩ Tolerance: ±10% Operating temperature: -55...125°C Power: 3W Mounting: on panel Operating voltage: 300V Temperature coefficient: 150ppm/°C Shaft diameter: 6mm Thread length: 12mm Shaft length: 25mm Electrical rotation angle: 270 ±10° Mechanical rotation angle: 300 ±5° Min. insulation resistance: 1TΩ Leads: for soldering Track material: cermet Potentiometer features: for industrial use; for military use IP rating: IP67 Shaft surface: smooth Characteristics: linear Type of potentiometer: shaft Kind of potentiometer: single turn |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2301CDS-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MRS25000C2324FCT00 | VISHAY |
Category: THT ResistorsDescription: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm Mounting: THT Type of resistor: thin film Leads dimensions: Ø0.6x28mm Diameter: 2.5mm Body dimensions: Ø2.5x6.5mm Length: 6.5mm Power: 0.6W Tolerance: ±1% Temperature coefficient: 50ppm/°C Operating voltage: 350V Resistance: 2.32MΩ |
auf Bestellung 8850 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF9540STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1.5KE130CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 111V Breakdown voltage: 130.5V Max. forward impulse current: 8.4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
auf Bestellung 577 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFR9024TRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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VJ1206A102JXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206 Operating temperature: -55...125°C Dielectric: C0G (NP0) Type of capacitor: ceramic Kind of capacitor: MLCC Mounting: SMD Capacitance: 1nF Tolerance: ±5% Operating voltage: 50V Case - inch: 1206 Case - mm: 3216 |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF9640LPBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF9Z24STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.7A Pulsed drain current: -44A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Gate charge: 19nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BZX85C20-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 20V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 18130 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C68-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 68V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 19770 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF630STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF630STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NTCS0805E3474FXT | VISHAY |
Category: SMD measurement NTC thermistorsDescription: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C Resistance: 470kΩ Tolerance: ±1% Operating temperature: -40...150°C Power: 0.21W Mounting: SMD Case - inch: 0805 Material constant B: 4025K Type of sensor: NTC thermistor |
auf Bestellung 1637 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR024PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRLR024TRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRLR024TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MAL215097601E3 | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20% Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 25V DC Body dimensions: 10x10x10mm Tolerance: ±20% Operating temperature: -55...105°C |
auf Bestellung 766 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE39A-E3/73 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel Type of diode: TVS Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: 7 inch reel Technology: TransZorb® Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
auf Bestellung 2193 Stücke: Lieferzeit 14-21 Tag (e) |
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TCMT1600 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 5µs Turn-on time: 6µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 80-300%@5mA Insulation voltage: 3.75kV Case: Mini-flat 4pin |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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TS63Y102KT20 | VISHAY |
Category: Multiturn SMD trimmersDescription: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD Mounting: SMD Tolerance: ±10% IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Operating temperature: -55...155°C Body dimensions: 6.85x6.85x5mm Power: 0.25W Torque: 1.5Ncm Operating voltage: 250V Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Resistance: 1kΩ Track material: cermet Kind of potentiometer: horizontal; multiturn |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WSL2512R1000FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.1Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
auf Bestellung 3293 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY17-3X009T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 5µs Turn-off time: 4.3µs Manufacturer series: CNY17 |
auf Bestellung 425 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233620473 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm Type of capacitor: polypropylene Capacitance: 47nF Operating voltage: 310V AC; 630V DC Tolerance: ±20% Mounting: THT Terminal pitch: 15mm Body dimensions: 5x11x17.5mm Kind of capacitor: X2 Leads: 2pin Lead length: 3.5mm Climate class: 55/105/56 |
auf Bestellung 3553 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233868418 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; Y2; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm Type of capacitor: polypropylene Capacitance: 1nF Operating voltage: 300V AC; 1kV DC Tolerance: ±20% Mounting: THT Kind of capacitor: Y2 Terminal pitch: 10mm Body dimensions: 12.5x4x10mm |
auf Bestellung 1935 Stücke: Lieferzeit 14-21 Tag (e) |
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TDCG1060M | VISHAY |
Category: 7-segment LED displaysDescription: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd Operating voltage: 2...2.4V Mounting: THT Common electrode: cathode Colour: green Type of display: LED Wavelength: 562...575nm Luminosity: 2.8...4mcd Digit height: 10mm; 0.39" Operating current: 20mA Dimensions: 40.2x12.8x7mm Number of characters: 4 Kind of display: 7-segment |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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T18105KT10 | VISHAY |
Category: 19mm multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear Resistance: 1MΩ Tolerance: ±10% Operating temperature: -55...125°C Power: 0.75W Mounting: THT Temperature coefficient: 100ppm/°C Potentiometer standard: 19mm Number of electrical turns: 15 ±1 Min. insulation resistance: 1TΩ Engineering PN: 43P; 89; 3006 Track material: cermet Kind of potentiometer: multiturn IP rating: IP67 Characteristics: linear Type of potentiometer: mounting |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YB105KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear Resistance: 1MΩ Tolerance: ±10% Operating temperature: -55...125°C Power: 0.5W Mounting: THT Operating voltage: 250V Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Torque: 1.5Ncm Potentiometer standard - inch: 3/8" Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y Manufacturer series: T93YB Track material: cermet Kind of potentiometer: multiturn IP rating: IP67 Characteristics: linear Type of potentiometer: mounting |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2301BDS-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -10A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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GRC00KK1022A00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 100V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 18x40mm |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603A101JXBAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 1181 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A101JXAAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 100pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A101JXEAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 500V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603Y101KXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C Kind of capacitor: MLCC |
auf Bestellung 81624 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A101JXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C Kind of capacitor: MLCC |
auf Bestellung 5778 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A101JXBCW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100pF; 100V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C Kind of capacitor: MLCC |
auf Bestellung 4743 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08050000Z0TABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 0Ω; 0.125W; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 0Ω Power: 0.125W Operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
auf Bestellung 44900 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHP15N50E-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14.5A Pulsed drain current: 28A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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VJ1206A103JXATW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
auf Bestellung 4043 Stücke: Lieferzeit 14-21 Tag (e) |
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AC03000001501JAC00 | VISHAY |
Category: Power resistorsDescription: Resistor: wire-wound; THT; 1.5kΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm Resistance: 1.5kΩ Tolerance: ±5% Operating temperature: -50...250°C Power: 3W Mounting: THT Temperature coefficient: 80ppm/°C Resistor features: non-flammable Body dimensions: Ø4.8x13mm Leads dimensions: Ø0.8x25mm Diameter: 4.8mm Type of resistor: wire-wound Length: 13mm Leads: axial |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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SMM02070C1001FBP00 | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; SMD; 0207 MELF; 1kΩ; 1W; ±1%; 350V; Ø2.2x5.8mm Type of resistor: thin film Mounting: SMD Case: 0207 MELF Resistance: 1kΩ Power: 1W Tolerance: ±1% Operating voltage: 350V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC-Q200 Length: 5.8mm Diameter: 2.2mm |
auf Bestellung 2096 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF510STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF830ALPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 934 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.77 EUR |
| 45+ | 1.6 EUR |
| 47+ | 1.53 EUR |
| 53+ | 1.36 EUR |
| 100+ | 1.29 EUR |
| 250+ | 1.2 EUR |
| 500+ | 1.12 EUR |
| IRF830ASPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF830ASTRLPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF830BPBF |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF840ASTRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF840LCLPBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF840LCSPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF840STRRPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF9530STRLPBF |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF9530STRRPBF |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFB13N50APBF |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SISS5808DN-T1-GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Drain current: 66.6A
Drain-source voltage: 80V
Gate charge: 24nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 65.7W
Pulsed drain current: 150A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Drain current: 66.6A
Drain-source voltage: 80V
Gate charge: 24nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 65.7W
Pulsed drain current: 150A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX85C22-TAP |
![]() |
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 4838 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 472+ | 0.15 EUR |
| 562+ | 0.13 EUR |
| 951+ | 0.075 EUR |
| 1279+ | 0.056 EUR |
| 1405+ | 0.051 EUR |
| IRF640PBF-BE3 |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.27 EUR |
| 54+ | 1.34 EUR |
| 58+ | 1.24 EUR |
| 61+ | 1.17 EUR |
| 100+ | 1.1 EUR |
| IRF640STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSC00AP4702GARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VJ0603A180JXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 2752 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 2273+ | 0.031 EUR |
| 2752+ | 0.026 EUR |
| SI7852DP-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE30L0FL472KAB |
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Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Tolerance: ±10%
Operating temperature: -55...125°C
Power: 3W
Mounting: on panel
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Potentiometer features: for industrial use; for military use
IP rating: IP67
Shaft surface: smooth
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Tolerance: ±10%
Operating temperature: -55...125°C
Power: 3W
Mounting: on panel
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Potentiometer features: for industrial use; for military use
IP rating: IP67
Shaft surface: smooth
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 28.6 EUR |
| 5+ | 24.18 EUR |
| 10+ | 22.98 EUR |
| 20+ | 22.49 EUR |
| 50+ | 22.35 EUR |
| SI2301CDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MRS25000C2324FCT00 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
Resistance: 2.32MΩ
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
Resistance: 2.32MΩ
auf Bestellung 8850 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 240+ | 0.3 EUR |
| 570+ | 0.13 EUR |
| 1000+ | 0.078 EUR |
| 5000+ | 0.057 EUR |
| IRF9540STRRPBF |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE130CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 107+ | 0.67 EUR |
| 154+ | 0.46 EUR |
| 500+ | 0.37 EUR |
| IRFR9024TRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VJ1206A102JXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| IRF9640LPBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF9Z24STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX85C20-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 18130 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 345+ | 0.21 EUR |
| 487+ | 0.15 EUR |
| 568+ | 0.13 EUR |
| 814+ | 0.088 EUR |
| 1000+ | 0.076 EUR |
| 2000+ | 0.065 EUR |
| 5000+ | 0.053 EUR |
| BZX85C68-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 19770 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 540+ | 0.13 EUR |
| 1100+ | 0.065 EUR |
| 1230+ | 0.058 EUR |
| 1340+ | 0.053 EUR |
| IRF630STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF630STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTCS0805E3474FXT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Resistance: 470kΩ
Tolerance: ±1%
Operating temperature: -40...150°C
Power: 0.21W
Mounting: SMD
Case - inch: 0805
Material constant B: 4025K
Type of sensor: NTC thermistor
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Resistance: 470kΩ
Tolerance: ±1%
Operating temperature: -40...150°C
Power: 0.21W
Mounting: SMD
Case - inch: 0805
Material constant B: 4025K
Type of sensor: NTC thermistor
auf Bestellung 1637 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 125+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.41 EUR |
| IRLR024PBF | ![]() |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLR024TRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLR024TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MAL215097601E3 |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
auf Bestellung 766 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.89 EUR |
| 59+ | 1.23 EUR |
| 71+ | 1.02 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.83 EUR |
| P6KE39A-E3/73 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 2193 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 230+ | 0.31 EUR |
| 296+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.16 EUR |
| TCMT1600 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5µs
Turn-on time: 6µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 80-300%@5mA
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5µs
Turn-on time: 6µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 80-300%@5mA
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 130+ | 0.55 EUR |
| 179+ | 0.4 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.24 EUR |
| 6000+ | 0.21 EUR |
| TS63Y102KT20 |
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Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD
Mounting: SMD
Tolerance: ±10%
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Power: 0.25W
Torque: 1.5Ncm
Operating voltage: 250V
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Resistance: 1kΩ
Track material: cermet
Kind of potentiometer: horizontal; multiturn
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD
Mounting: SMD
Tolerance: ±10%
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Power: 0.25W
Torque: 1.5Ncm
Operating voltage: 250V
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Resistance: 1kΩ
Track material: cermet
Kind of potentiometer: horizontal; multiturn
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.26 EUR |
| 24+ | 3.09 EUR |
| 50+ | 2.87 EUR |
| 200+ | 2.69 EUR |
| 500+ | 2.62 EUR |
| WSL2512R1000FEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 3293 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 162+ | 0.44 EUR |
| 222+ | 0.32 EUR |
| 252+ | 0.28 EUR |
| 290+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.2 EUR |
| CNY17-3X009T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 122+ | 0.59 EUR |
| 152+ | 0.47 EUR |
| 168+ | 0.43 EUR |
| BFC233620473 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 15mm
Body dimensions: 5x11x17.5mm
Kind of capacitor: X2
Leads: 2pin
Lead length: 3.5mm
Climate class: 55/105/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 15mm
Body dimensions: 5x11x17.5mm
Kind of capacitor: X2
Leads: 2pin
Lead length: 3.5mm
Climate class: 55/105/56
auf Bestellung 3553 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 241+ | 0.3 EUR |
| 336+ | 0.21 EUR |
| 379+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.16 EUR |
| 2000+ | 0.15 EUR |
| BFC233868418 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Tolerance: ±20%
Mounting: THT
Kind of capacitor: Y2
Terminal pitch: 10mm
Body dimensions: 12.5x4x10mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Tolerance: ±20%
Mounting: THT
Kind of capacitor: Y2
Terminal pitch: 10mm
Body dimensions: 12.5x4x10mm
auf Bestellung 1935 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 1400+ | 0.4 EUR |
| TDCG1060M |
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Hersteller: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Colour: green
Type of display: LED
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Digit height: 10mm; 0.39"
Operating current: 20mA
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Kind of display: 7-segment
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Colour: green
Type of display: LED
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Digit height: 10mm; 0.39"
Operating current: 20mA
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Kind of display: 7-segment
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.53 EUR |
| 28+ | 2.63 EUR |
| 48+ | 2.16 EUR |
| T18105KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Tolerance: ±10%
Operating temperature: -55...125°C
Power: 0.75W
Mounting: THT
Temperature coefficient: 100ppm/°C
Potentiometer standard: 19mm
Number of electrical turns: 15 ±1
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Tolerance: ±10%
Operating temperature: -55...125°C
Power: 0.75W
Mounting: THT
Temperature coefficient: 100ppm/°C
Potentiometer standard: 19mm
Number of electrical turns: 15 ±1
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.62 EUR |
| 32+ | 2.3 EUR |
| T93YB105KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Resistance: 1MΩ
Tolerance: ±10%
Operating temperature: -55...125°C
Power: 0.5W
Mounting: THT
Operating voltage: 250V
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Resistance: 1MΩ
Tolerance: ±10%
Operating temperature: -55...125°C
Power: 0.5W
Mounting: THT
Operating voltage: 250V
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.43 EUR |
| 49+ | 1.47 EUR |
| 54+ | 1.34 EUR |
| SI2301BDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GRC00KK1022A00L |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 47+ | 1.54 EUR |
| 58+ | 1.24 EUR |
| 100+ | 1.12 EUR |
| VJ0603A101JXBAC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 1181 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| VJ0805A101JXAAC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| VJ0805A101JXEAC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 353+ | 0.2 EUR |
| 966+ | 0.074 EUR |
| 1185+ | 0.06 EUR |
| 1337+ | 0.053 EUR |
| VJ0603Y101KXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Kind of capacitor: MLCC
auf Bestellung 81624 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1250+ | 0.057 EUR |
| 4167+ | 0.017 EUR |
| 4465+ | 0.016 EUR |
| 5051+ | 0.014 EUR |
| 9175+ | 0.0078 EUR |
| 14971+ | 0.0048 EUR |
| 19012+ | 0.0038 EUR |
| 20000+ | 0.0037 EUR |
| VJ0805A101JXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Kind of capacitor: MLCC
auf Bestellung 5778 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 1352+ | 0.053 EUR |
| 2058+ | 0.035 EUR |
| 2778+ | 0.026 EUR |
| 3165+ | 0.023 EUR |
| 4202+ | 0.017 EUR |
| VJ0805A101JXBCW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 100V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 100V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Kind of capacitor: MLCC
auf Bestellung 4743 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1429+ | 0.05 EUR |
| 1866+ | 0.038 EUR |
| 2084+ | 0.034 EUR |
| 2618+ | 0.027 EUR |
| 2858+ | 0.025 EUR |
| 3106+ | 0.023 EUR |
| 4000+ | 0.021 EUR |
| CRCW08050000Z0TABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 0Ω; 0.125W; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 0Ω
Power: 0.125W
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 0Ω; 0.125W; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 0Ω
Power: 0.125W
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 44900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4100+ | 0.018 EUR |
| 18200+ | 0.0039 EUR |
| 33800+ | 0.0021 EUR |
| SIHP15N50E-BE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14.5A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14.5A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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| VJ1206A103JXATW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 4043 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 3000+ | 0.15 EUR |
| AC03000001501JAC00 |
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Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 1.5kΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Resistance: 1.5kΩ
Tolerance: ±5%
Operating temperature: -50...250°C
Power: 3W
Mounting: THT
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Diameter: 4.8mm
Type of resistor: wire-wound
Length: 13mm
Leads: axial
Category: Power resistors
Description: Resistor: wire-wound; THT; 1.5kΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Resistance: 1.5kΩ
Tolerance: ±5%
Operating temperature: -50...250°C
Power: 3W
Mounting: THT
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Diameter: 4.8mm
Type of resistor: wire-wound
Length: 13mm
Leads: axial
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 132+ | 0.54 EUR |
| 162+ | 0.44 EUR |
| 179+ | 0.4 EUR |
| 250+ | 0.35 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.26 EUR |
| SMM02070C1001FBP00 |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 1kΩ; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: thin film
Mounting: SMD
Case: 0207 MELF
Resistance: 1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 1kΩ; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: thin film
Mounting: SMD
Case: 0207 MELF
Resistance: 1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
auf Bestellung 2096 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 183+ | 0.39 EUR |
| 286+ | 0.25 EUR |
| 334+ | 0.21 EUR |
| 374+ | 0.19 EUR |
| 421+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 556+ | 0.13 EUR |
| 1500+ | 0.12 EUR |


























