Foto | Bezeichnung | Hersteller | Beschreibung |
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293D336X9016D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
auf Bestellung 1725 Stücke: Lieferzeit 14-21 Tag (e) |
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293D336X9020D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
auf Bestellung 452 Stücke: Lieferzeit 14-21 Tag (e) |
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293D336X9025D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 33uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56-E3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
auf Bestellung 14370 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56-G3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CRCW040210K0FKTDBC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 10kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Temperature coefficient: 100ppm/°C Mounting: SMD Operating temperature: -55...155°C |
auf Bestellung 774800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR120TRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1184 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL219826681E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 680µF Operating voltage: 400V DC Body dimensions: Ø35x60mm Tolerance: ±20% Operating temperature: -40...85°C Terminal pitch: 10mm Service life: 15000h |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHA180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 44A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHB180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHD180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 40A Power dissipation: 156W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHG080N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 96A Power dissipation: 227W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHG180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHH080N60E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 96A Power dissipation: 184W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHH180N60E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 114W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHP180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MAL219866151E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 150µF Operating voltage: 400V DC Body dimensions: Ø22x40mm Terminal pitch: 10mm Tolerance: ±20% Service life: 15000h Operating temperature: -40...85°C |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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WSL2512R2000FEA | VISHAY |
![]() Description: Resistor: power metal; sensing; SMD; 2512; 200mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.2Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
auf Bestellung 1352 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ5.0A-E3/52 | VISHAY |
![]() ![]() Description: Diode: TVS; 600W; 6.4V; 65.2A; unidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: 7 inch reel; tape Technology: TransZorb® Leakage current: 0.8mA Manufacturer series: SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 12233 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ5.0A-E3/5B | VISHAY |
![]() Description: Diode: TVS; 600W; 6735mV; 65.2A; unidirectional; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6735mV Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: 13 inch reel; tape Manufacturer series: SMBJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 3925 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ5.0CD-M3/H | VISHAY |
![]() Description: Diode: TVS; 600W; 6.5V; 65.9A; bidirectional; SMB; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.5V Max. forward impulse current: 65.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ5.0D-M3/H | VISHAY |
![]() Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.5V Max. forward impulse current: 65.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 3551 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233840105 | VISHAY |
![]() Description: Capacitor: polypropylene; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±20% Terminal pitch: 22.5mm Operating voltage: 300V AC; 630V DC Body dimensions: 26x12x22mm |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233910105 | VISHAY |
![]() Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±10% Terminal pitch: 22.5mm Operating voltage: 310V AC; 630V DC Body dimensions: 26x12x22mm |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233921105 | VISHAY |
![]() Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±20% Terminal pitch: 27.5mm Operating voltage: 310V AC; 630V DC Body dimensions: 31x11x21mm |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233926105 | VISHAY |
![]() Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±20% Terminal pitch: 22.5mm Operating voltage: 310V AC; 630V DC Body dimensions: 26x10x19.5mm |
auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH6206-3X001T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 3µs Turn-off time: 2.3µs |
auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT85S-TAP | VISHAY |
![]() Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 5A Kind of package: Ammo Pack |
auf Bestellung 12028 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT85S-TR | VISHAY |
![]() Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 5A Kind of package: 14 inch reel |
auf Bestellung 10138 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL213651222E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Body dimensions: Ø18x35mm Terminal pitch: 7.5mm |
auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
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ZRC00KL2221H00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 18x35.5mm |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHB12N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHF12N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHP12N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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293D226X9010A2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Case: A Case - inch: 1206 Case - mm: 3216 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
auf Bestellung 9461 Stücke: Lieferzeit 14-21 Tag (e) |
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293D226X9010B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 1411 Case - mm: 3528 Case: B |
auf Bestellung 5590 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9520PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of channel: enhancement Gate charge: 18nC Kind of package: tube |
auf Bestellung 343 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9520SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC Kind of package: tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9520STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTCLE100E3474JB0 | VISHAY |
![]() Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW Type of sensor: NTC thermistor Resistance: 470kΩ Mounting: THT Material constant B: 4570K Operating temperature: -40...125°C Power: 0.5W |
auf Bestellung 1799 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY70 | VISHAY |
![]() Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective Type of sensor: optocoupler Kind of optocoupler: reflective Kind of output: transistor Collector-emitter voltage: 32V |
auf Bestellung 5146 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE36A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 963 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE36CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
auf Bestellung 1261 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLZ44PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 28mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 66nC |
auf Bestellung 716 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08054R70FKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 4.7Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 15285 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08054R70FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805 Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 4.7Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Manufacturer series: CRCW0805 |
auf Bestellung 3100 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12064R70FKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
auf Bestellung 4897 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12064R70FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12064R70JNEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12064R70JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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P16NP105MAB15 | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered Resistance: 1MΩ Power: 1W Tolerance: ±20% Temperature coefficient: 150ppm/°C Leads: solder lugs Potentiometer features: for industrial use; with knob Kind of potentiometer: single turn IP rating: IP67 Characteristics: linear Type of potentiometer: shaft Mounting: soldered Operating temperature: -40...85°C Panel cutout diameter: 10mm Knob dimensions: Ø16x8mm Electrical rotation angle: 270° Track material: cermet |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2302CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4602 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2302DDS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3419 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHB8N50D-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHF8N50D-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHP8N50D-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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293D106X9063E2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Operating temperature: -55...125°C Capacitance: 10µF Operating voltage: 63V DC Tolerance: ±10% Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BFC236855474 | VISHAY |
![]() Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT Mounting: THT Type of capacitor: polyester Operating temperature: -55...85°C Capacitance: 0.47µF Lead length: 0.8mm Terminal pitch: 22.5mm Body dimensions: 8x20x26mm Tolerance: ±10% Operating voltage: 220V AC; 400V DC |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
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DG408DJ-E3 | VISHAY |
![]() ![]() Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube Type of integrated circuit: multiplexer Output configuration: 8:1 Number of channels: 1 Case: DIP16 Mounting: THT Kind of package: tube Resistance: 100Ω Supply voltage: 5...20V; 5...36V |
auf Bestellung 581 Stücke: Lieferzeit 14-21 Tag (e) |
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DG408DQ-T1-E3 | VISHAY |
![]() Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape Type of integrated circuit: multiplexer Output configuration: 8:1 Number of channels: 1 Case: TSSOP16 Mounting: SMD Kind of package: reel; tape Resistance: 100Ω Supply voltage: 5...20V; 5...36V Application: automotive industry |
auf Bestellung 3055 Stücke: Lieferzeit 14-21 Tag (e) |
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293D336X9016D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
166+ | 0.43 EUR |
211+ | 0.34 EUR |
283+ | 0.25 EUR |
300+ | 0.24 EUR |
1500+ | 0.23 EUR |
293D336X9020D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
122+ | 0.59 EUR |
167+ | 0.43 EUR |
176+ | 0.41 EUR |
177+ | 0.4 EUR |
293D336X9025D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
BAW56-E3-08 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 14370 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
747+ | 0.096 EUR |
1185+ | 0.06 EUR |
1573+ | 0.045 EUR |
2825+ | 0.025 EUR |
2977+ | 0.024 EUR |
BAW56-G3-08 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CRCW040210K0FKTDBC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 774800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6900+ | 0.01 EUR |
25300+ | 0.0028 EUR |
58200+ | 0.0012 EUR |
84800+ | 0.00084 EUR |
87800+ | 0.00082 EUR |
100000+ | 0.00072 EUR |
106400+ | 0.00067 EUR |
IRLR120TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1184 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
124+ | 0.58 EUR |
141+ | 0.51 EUR |
162+ | 0.44 EUR |
171+ | 0.42 EUR |
MAL219826681E3 |
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Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Body dimensions: Ø35x60mm
Tolerance: ±20%
Operating temperature: -40...85°C
Terminal pitch: 10mm
Service life: 15000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Body dimensions: Ø35x60mm
Tolerance: ±20%
Operating temperature: -40...85°C
Terminal pitch: 10mm
Service life: 15000h
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.24 EUR |
4+ | 22.91 EUR |
SIHA180N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHB180N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHD180N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHG080N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHG180N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHH080N60E-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHH180N60E-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHP180N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MAL219866151E3 |
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Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.27 EUR |
9+ | 8.08 EUR |
10+ | 7.64 EUR |
WSL2512R2000FEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 200mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.2Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 200mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.2Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 1352 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
159+ | 0.45 EUR |
193+ | 0.37 EUR |
209+ | 0.34 EUR |
268+ | 0.27 EUR |
283+ | 0.25 EUR |
SMBJ5.0A-E3/52 | ![]() |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4V; 65.2A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Leakage current: 0.8mA
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4V; 65.2A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Leakage current: 0.8mA
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 12233 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
302+ | 0.24 EUR |
399+ | 0.18 EUR |
421+ | 0.17 EUR |
502+ | 0.14 EUR |
960+ | 0.075 EUR |
1017+ | 0.07 EUR |
SMBJ5.0A-E3/5B |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6735mV; 65.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6735mV
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6735mV; 65.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6735mV
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 3925 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
234+ | 0.31 EUR |
266+ | 0.27 EUR |
331+ | 0.22 EUR |
473+ | 0.15 EUR |
827+ | 0.087 EUR |
875+ | 0.082 EUR |
3200+ | 0.081 EUR |
SMBJ5.0CD-M3/H |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.25 EUR |
SMBJ5.0D-M3/H |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 3551 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
309+ | 0.23 EUR |
443+ | 0.16 EUR |
747+ | 0.096 EUR |
782+ | 0.092 EUR |
BFC233840105 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Operating voltage: 300V AC; 630V DC
Body dimensions: 26x12x22mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Operating voltage: 300V AC; 630V DC
Body dimensions: 26x12x22mm
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.34 EUR |
11+ | 6.61 EUR |
BFC233910105 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±10%
Terminal pitch: 22.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 26x12x22mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±10%
Terminal pitch: 22.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 26x12x22mm
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.97 EUR |
BFC233921105 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 31x11x21mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 31x11x21mm
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
90+ | 0.8 EUR |
109+ | 0.66 EUR |
136+ | 0.53 EUR |
144+ | 0.5 EUR |
BFC233926105 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 26x10x19.5mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 26x10x19.5mm
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.99 EUR |
43+ | 1.69 EUR |
45+ | 1.6 EUR |
SFH6206-3X001T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
91+ | 0.79 EUR |
205+ | 0.35 EUR |
216+ | 0.33 EUR |
BAT85S-TAP |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: Ammo Pack
auf Bestellung 12028 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
472+ | 0.15 EUR |
516+ | 0.14 EUR |
700+ | 0.1 EUR |
1299+ | 0.055 EUR |
1374+ | 0.052 EUR |
BAT85S-TR |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
auf Bestellung 10138 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
309+ | 0.23 EUR |
573+ | 0.12 EUR |
1352+ | 0.053 EUR |
1429+ | 0.05 EUR |
MAL213651222E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.71 EUR |
24+ | 3.02 EUR |
25+ | 2.86 EUR |
26+ | 2.85 EUR |
ZRC00KL2221H00L |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.93 EUR |
31+ | 2.36 EUR |
55+ | 1.3 EUR |
59+ | 1.23 EUR |
SIHB12N65E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHF12N65E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHP12N65E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
293D226X9010A2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 9461 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
262+ | 0.27 EUR |
348+ | 0.21 EUR |
388+ | 0.18 EUR |
695+ | 0.1 EUR |
736+ | 0.097 EUR |
293D226X9010B2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1411
Case - mm: 3528
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1411
Case - mm: 3528
Case: B
auf Bestellung 5590 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
260+ | 0.28 EUR |
329+ | 0.22 EUR |
363+ | 0.2 EUR |
596+ | 0.12 EUR |
633+ | 0.11 EUR |
IRF9520PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.47 EUR |
63+ | 1.15 EUR |
124+ | 0.58 EUR |
131+ | 0.55 EUR |
IRF9520SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.49 EUR |
35+ | 2.07 EUR |
91+ | 0.79 EUR |
97+ | 0.74 EUR |
IRF9520STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTCLE100E3474JB0 |
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Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 470kΩ
Mounting: THT
Material constant B: 4570K
Operating temperature: -40...125°C
Power: 0.5W
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 470kΩ
Mounting: THT
Material constant B: 4570K
Operating temperature: -40...125°C
Power: 0.5W
auf Bestellung 1799 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
134+ | 0.54 EUR |
141+ | 0.51 EUR |
194+ | 0.37 EUR |
205+ | 0.35 EUR |
CNY70 |
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Hersteller: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
auf Bestellung 5146 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
89+ | 0.81 EUR |
97+ | 0.74 EUR |
118+ | 0.61 EUR |
125+ | 0.57 EUR |
1.5KE36A-E3/54 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
128+ | 0.56 EUR |
146+ | 0.49 EUR |
225+ | 0.32 EUR |
239+ | 0.3 EUR |
1.5KE36CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1261 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
129+ | 0.55 EUR |
153+ | 0.47 EUR |
214+ | 0.33 EUR |
227+ | 0.32 EUR |
IRLZ44PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 66nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 66nC
auf Bestellung 716 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
34+ | 2.14 EUR |
68+ | 1.06 EUR |
72+ | 1 EUR |
CRCW08054R70FKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 15285 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
704+ | 0.1 EUR |
1786+ | 0.04 EUR |
2404+ | 0.03 EUR |
2703+ | 0.026 EUR |
3876+ | 0.018 EUR |
4855+ | 0.015 EUR |
5103+ | 0.014 EUR |
10000+ | 0.013 EUR |
CRCW08054R70FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
auf Bestellung 3100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
700+ | 0.11 EUR |
1400+ | 0.051 EUR |
3100+ | 0.023 EUR |
CRCW12064R70FKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
auf Bestellung 4897 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
802+ | 0.089 EUR |
1852+ | 0.039 EUR |
2605+ | 0.027 EUR |
3145+ | 0.023 EUR |
4066+ | 0.018 EUR |
4311+ | 0.017 EUR |
CRCW12064R70FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
820+ | 0.087 EUR |
1290+ | 0.056 EUR |
2690+ | 0.027 EUR |
2850+ | 0.025 EUR |
CRCW12064R70JNEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
350+ | 0.2 EUR |
CRCW12064R70JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1700+ | 0.043 EUR |
3600+ | 0.02 EUR |
4600+ | 0.016 EUR |
4800+ | 0.014 EUR |
P16NP105MAB15 |
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Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Resistance: 1MΩ
Power: 1W
Tolerance: ±20%
Temperature coefficient: 150ppm/°C
Leads: solder lugs
Potentiometer features: for industrial use; with knob
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Mounting: soldered
Operating temperature: -40...85°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Track material: cermet
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Resistance: 1MΩ
Power: 1W
Tolerance: ±20%
Temperature coefficient: 150ppm/°C
Leads: solder lugs
Potentiometer features: for industrial use; with knob
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Mounting: soldered
Operating temperature: -40...85°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Track material: cermet
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 25.58 EUR |
5+ | 14.66 EUR |
6+ | 13.86 EUR |
20+ | 13.84 EUR |
SI2302CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4602 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
168+ | 0.43 EUR |
202+ | 0.35 EUR |
212+ | 0.34 EUR |
382+ | 0.19 EUR |
404+ | 0.18 EUR |
SI2302DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3419 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
195+ | 0.37 EUR |
218+ | 0.33 EUR |
278+ | 0.26 EUR |
486+ | 0.15 EUR |
516+ | 0.14 EUR |
3000+ | 0.13 EUR |
SIHB8N50D-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHF8N50D-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHP8N50D-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
293D106X9063E2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC236855474 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Mounting: THT
Type of capacitor: polyester
Operating temperature: -55...85°C
Capacitance: 0.47µF
Lead length: 0.8mm
Terminal pitch: 22.5mm
Body dimensions: 8x20x26mm
Tolerance: ±10%
Operating voltage: 220V AC; 400V DC
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Mounting: THT
Type of capacitor: polyester
Operating temperature: -55...85°C
Capacitance: 0.47µF
Lead length: 0.8mm
Terminal pitch: 22.5mm
Body dimensions: 8x20x26mm
Tolerance: ±10%
Operating voltage: 220V AC; 400V DC
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.09 EUR |
62+ | 1.16 EUR |
66+ | 1.09 EUR |
DG408DJ-E3 | ![]() |
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Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: DIP16
Mounting: THT
Kind of package: tube
Resistance: 100Ω
Supply voltage: 5...20V; 5...36V
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: DIP16
Mounting: THT
Kind of package: tube
Resistance: 100Ω
Supply voltage: 5...20V; 5...36V
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.47 EUR |
36+ | 1.99 EUR |
39+ | 1.87 EUR |
DG408DQ-T1-E3 |
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Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Supply voltage: 5...20V; 5...36V
Application: automotive industry
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Supply voltage: 5...20V; 5...36V
Application: automotive industry
auf Bestellung 3055 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
38+ | 1.9 EUR |
44+ | 1.66 EUR |
46+ | 1.57 EUR |
500+ | 1.52 EUR |