| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI5504BDC-T1-E3 | VISHAY |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A Mounting: SMD On-state resistance: 235/100mΩ Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: 30/-30V Drain current: 4/-3.7A Type of transistor: N/P-MOSFET Power dissipation: 3.1/3.12W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5504BDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A Mounting: SMD On-state resistance: 235/100mΩ Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: 30/-30V Drain current: 4/-3.7A Type of transistor: N/P-MOSFET Power dissipation: 3.1/3.12W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5513CDC-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A Mounting: SMD Power dissipation: 3.1W Gate charge: 5.6/4.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -3.7/4A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 255/85mΩ Pulsed drain current: -8...10A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5513CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A Mounting: SMD Power dissipation: 3.1W Gate charge: 5.6/4.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -3.7/4A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 255/85mΩ Pulsed drain current: -8...10A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5515CDC-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W Polarisation: unipolar Kind of package: reel; tape Power dissipation: 3.1W Gate charge: 11/11.3nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Drain-source voltage: 20/-20V Drain current: 4/-4A On-state resistance: 156/50mΩ Type of transistor: N/P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5515CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W Polarisation: unipolar Kind of package: reel; tape Power dissipation: 3.1W Gate charge: 11/11.3nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Drain-source voltage: 20/-20V Drain current: 4/-4A On-state resistance: 156/50mΩ Type of transistor: N/P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5517DU-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W Drain-source voltage: 20/-20V Drain current: 6/-6A On-state resistance: 131/55mΩ Type of transistor: N/P-MOSFET Power dissipation: 8.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14/16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5902BDC-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 10A Power dissipation: 3.12W Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5902BDC-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 10A Power dissipation: 3.12W Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5908DC-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.9A Pulsed drain current: 20A Power dissipation: 2.1W Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5908DC-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.9A Pulsed drain current: 20A Power dissipation: 2.1W Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| Si5922DU-T1-GE3 | VISHAY | SI5922DU-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI5935CDC-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 3.1W Gate-source voltage: ±8V On-state resistance: 156mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5935CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: ChipFET Gate-source voltage: ±8V On-state resistance: 100mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI5936DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 25A Power dissipation: 10.4W Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| Si5948DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 10A Power dissipation: 7W Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI6415DQ-T1-E3 | VISHAY |
SI6415DQ-T1-E3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SI6415DQ-T1-GE3 | VISHAY |
SI6415DQ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SI6423DQ-T1-E3 | VISHAY |
SI6423DQ-T1-E3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SI6423DQ-T1-GE3 | VISHAY |
SI6423DQ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI6562CDQ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A On-state resistance: 22/30mΩ Mounting: SMD Case: TSSOP8 Power dissipation: 1/1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23/51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Drain-source voltage: 20/-20V Drain current: 4.2/-4.9A Type of transistor: N/P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI6913DQ-T1-E3 | VISHAY |
SI6913DQ-T1-E3 Multi channel transistors |
Produkt ist nicht verfügbar |
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| SI6913DQ-T1-GE3 | VISHAY |
SI6913DQ-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SI6926ADQ-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8 Case: TSSOP8 Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 43mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI6926ADQ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 20A Case: TSSOP8 Drain-source voltage: 20V Drain current: 4.5A On-state resistance: 43mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| Si6954ADQ-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.4A Pulsed drain current: 20A Power dissipation: 1W Case: TSSOP8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI6954ADQ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.4A Pulsed drain current: 20A Power dissipation: 1W Case: TSSOP8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI6968BEDQ-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 30A Power dissipation: 1.5W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI6968BEDQ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 30A Power dissipation: 1.5W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7101DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI7104DN-T1-E3 | VISHAY |
SI7104DN-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI7104DN-T1-GE3 | VISHAY |
SI7104DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SI7106DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A Mounting: SMD Drain-source voltage: 20V Drain current: 19.5A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7106DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A Mounting: SMD Drain-source voltage: 20V Drain current: 19.5A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7108DN-T1-E3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Power dissipation: 3.8W Gate charge: 30nC Polarisation: unipolar Technology: TrenchFET® Drain current: 22A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 6.1mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7108DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Power dissipation: 3.8W Gate charge: 30nC Polarisation: unipolar Technology: TrenchFET® Drain current: 22A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 6.1mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7110DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21.1A; Idm: 60A Case: PowerPAK® 1212-8 Mounting: SMD Drain-source voltage: 20V Drain current: 21.1A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7110DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21.1A; Idm: 60A Case: PowerPAK® 1212-8 Mounting: SMD Drain-source voltage: 20V Drain current: 21.1A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| Si7111EDN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -150A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -60A Pulsed drain current: -150A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 16mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7112DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.8A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7112DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.8A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7113ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -10.8A Pulsed drain current: -20A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 132mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7113DN-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13.2A Pulsed drain current: -20A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7113DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.5A Pulsed drain current: -20A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.134Ω Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2795 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI7114ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W Mounting: SMD Power dissipation: 39W Polarisation: unipolar Kind of package: reel; tape Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 35A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7114DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A Mounting: SMD Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 18.3A On-state resistance: 10mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7114DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A Mounting: SMD Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 18.3A On-state resistance: 10mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7115DN-T1-E3 | VISHAY |
SI7115DN-T1-E3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SI7115DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -8.9A Pulsed drain current: -15A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.295Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7116BDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Pulsed drain current: 100A Power dissipation: 62.5W Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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| SI7116DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 16.4A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7116DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 16.4A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7117DN-T1-E3 | VISHAY |
SI7117DN-T1-E3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SI7117DN-T1-GE3 | VISHAY |
SI7117DN-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SI7119DN-T1-E3 | VISHAY |
SI7119DN-T1-E3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SI7119DN-T1-GE3 | VISHAY |
SI7119DN-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| Si7120ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 45nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Drain-source voltage: 60V Drain current: 9.5A On-state resistance: 31mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7121ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -50A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7121DN-T1-GE3 | VISHAY |
SI7121DN-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SI7129DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -60A Power dissipation: 52.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
| SI5504BDC-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Mounting: SMD
On-state resistance: 235/100mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Type of transistor: N/P-MOSFET
Power dissipation: 3.1/3.12W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Mounting: SMD
On-state resistance: 235/100mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Type of transistor: N/P-MOSFET
Power dissipation: 3.1/3.12W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5504BDC-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Mounting: SMD
On-state resistance: 235/100mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Type of transistor: N/P-MOSFET
Power dissipation: 3.1/3.12W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Mounting: SMD
On-state resistance: 235/100mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Type of transistor: N/P-MOSFET
Power dissipation: 3.1/3.12W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5513CDC-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5513CDC-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5515CDC-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 4/-4A
On-state resistance: 156/50mΩ
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 4/-4A
On-state resistance: 156/50mΩ
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5515CDC-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 4/-4A
On-state resistance: 156/50mΩ
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 4/-4A
On-state resistance: 156/50mΩ
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5517DU-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W
Drain-source voltage: 20/-20V
Drain current: 6/-6A
On-state resistance: 131/55mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 8.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14/16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W
Drain-source voltage: 20/-20V
Drain current: 6/-6A
On-state resistance: 131/55mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 8.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14/16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5902BDC-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5902BDC-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5908DC-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5908DC-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| Si5922DU-T1-GE3 |
Hersteller: VISHAY
SI5922DU-T1-GE3 SMD N channel transistors
SI5922DU-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI5935CDC-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 3.1W
Gate-source voltage: ±8V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 3.1W
Gate-source voltage: ±8V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI5935CDC-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI5936DU-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 10.4W
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 10.4W
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| Si5948DU-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 10A
Power dissipation: 7W
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 10A
Power dissipation: 7W
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI6415DQ-T1-E3 |
|
Hersteller: VISHAY
SI6415DQ-T1-E3 SMD P channel transistors
SI6415DQ-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI6415DQ-T1-GE3 |
|
Hersteller: VISHAY
SI6415DQ-T1-GE3 SMD P channel transistors
SI6415DQ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI6423DQ-T1-E3 |
|
Hersteller: VISHAY
SI6423DQ-T1-E3 SMD P channel transistors
SI6423DQ-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI6423DQ-T1-GE3 |
|
Hersteller: VISHAY
SI6423DQ-T1-GE3 SMD P channel transistors
SI6423DQ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI6562CDQ-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A
On-state resistance: 22/30mΩ
Mounting: SMD
Case: TSSOP8
Power dissipation: 1/1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23/51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20/-20V
Drain current: 4.2/-4.9A
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A
On-state resistance: 22/30mΩ
Mounting: SMD
Case: TSSOP8
Power dissipation: 1/1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23/51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20/-20V
Drain current: 4.2/-4.9A
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI6913DQ-T1-E3 |
|
Hersteller: VISHAY
SI6913DQ-T1-E3 Multi channel transistors
SI6913DQ-T1-E3 Multi channel transistors
Produkt ist nicht verfügbar
| SI6913DQ-T1-GE3 |
|
Hersteller: VISHAY
SI6913DQ-T1-GE3 Multi channel transistors
SI6913DQ-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
| SI6926ADQ-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SI6926ADQ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 20A
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 20A
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| Si6954ADQ-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 20A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 20A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI6954ADQ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 20A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 20A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI6968BEDQ-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI6968BEDQ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7101DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SI7104DN-T1-E3 |
|
Hersteller: VISHAY
SI7104DN-T1-E3 SMD N channel transistors
SI7104DN-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI7104DN-T1-GE3 |
|
Hersteller: VISHAY
SI7104DN-T1-GE3 SMD N channel transistors
SI7104DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SI7106DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7106DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7108DN-T1-E3 | |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7108DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7110DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21.1A; Idm: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 20V
Drain current: 21.1A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21.1A; Idm: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 20V
Drain current: 21.1A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7110DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21.1A; Idm: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 20V
Drain current: 21.1A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21.1A; Idm: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 20V
Drain current: 21.1A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| Si7111EDN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7112DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7112DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7113ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -10.8A
Pulsed drain current: -20A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -10.8A
Pulsed drain current: -20A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7113DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.2A
Pulsed drain current: -20A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.2A
Pulsed drain current: -20A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7113DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2795 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.9 EUR |
| 46+ | 1.57 EUR |
| 66+ | 1.09 EUR |
| 70+ | 1.03 EUR |
| 1000+ | 1 EUR |
| 3000+ | 0.99 EUR |
| SI7114ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7114DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7114DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7115DN-T1-E3 |
|
Hersteller: VISHAY
SI7115DN-T1-E3 SMD P channel transistors
SI7115DN-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI7115DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7116BDN-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
| SI7116DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7116DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7117DN-T1-E3 |
|
Hersteller: VISHAY
SI7117DN-T1-E3 SMD P channel transistors
SI7117DN-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI7117DN-T1-GE3 |
|
Hersteller: VISHAY
SI7117DN-T1-GE3 SMD P channel transistors
SI7117DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI7119DN-T1-E3 |
|
Hersteller: VISHAY
SI7119DN-T1-E3 SMD P channel transistors
SI7119DN-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI7119DN-T1-GE3 |
|
Hersteller: VISHAY
SI7119DN-T1-GE3 SMD P channel transistors
SI7119DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| Si7120ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7121ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SI7121DN-T1-GE3 |
|
Hersteller: VISHAY
SI7121DN-T1-GE3 SMD P channel transistors
SI7121DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SI7129DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar