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SI2356DS-T1-GE3 SI2356DS-T1-GE3 VISHAY si2356ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Kind of package: reel; tape
Technology: TrenchFET®
Mounting: SMD
Drain-source voltage: 40V
Drain current: 4.3A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5968 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
209+ 0.34 EUR
261+ 0.27 EUR
371+ 0.19 EUR
486+ 0.15 EUR
516+ 0.14 EUR
3000+ 0.13 EUR
Mindestbestellmenge: 152
SI2365EDS-T1-BE3 VISHAY si2365eds.pdf SI2365EDS-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 VISHAY si2365eds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI2366DS-T1-BE3 VISHAY SI2366DS-T1-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2366DS-T1-GE3 VISHAY si2366ds.pdf SI2366DS-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2367DS-T1-GE3
+1
 		SI2367DS-T1-GE3 VISHAY SI2367DS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369BDS-T1-GE3 VISHAY si2369bds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369DS-T1-GE3 SI2369DS-T1-GE3 VISHAY si2369d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Drain-source voltage: -30V
Drain current: -7.6A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2551 Stücke:
Lieferzeit 7-14 Tag (e)
144+0.5 EUR
177+ 0.4 EUR
212+ 0.34 EUR
288+ 0.25 EUR
305+ 0.23 EUR
Mindestbestellmenge: 144
SI2371EDS-T1-GE3 SI2371EDS-T1-GE3 VISHAY si2371eds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-BE3 VISHAY si2374ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-GE3 SI2374DS-T1-GE3 VISHAY si2374ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.7A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.7A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2720 Stücke:
Lieferzeit 7-14 Tag (e)
215+0.33 EUR
338+ 0.21 EUR
414+ 0.17 EUR
439+ 0.16 EUR
Mindestbestellmenge: 215
SI2377EDS-T1-GE3 SI2377EDS-T1-GE3 VISHAY SI2377EDS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2891 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
224+ 0.32 EUR
292+ 0.25 EUR
308+ 0.23 EUR
Mindestbestellmenge: 200
SI2387DS-T1-GE3 VISHAY si2387ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 VISHAY si2392ads.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2392DS-T1-GE3 VISHAY Si2392DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 10.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2393DS-T1-GE3 VISHAY si2393ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2399DS-T1-GE3 SI2399DS-T1-GE3 VISHAY si2399ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -20A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3127DV-T1-GE3 SI3127DV-T1-GE3 VISHAY si3127dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: TSOP6
Drain-source voltage: -60V
Drain current: -5.1A
On-state resistance: 89mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3129DV-T1-GE3 VISHAY si3129dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -5.4A; Idm: -20A
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Drain-source voltage: -80V
Drain current: -5.4A
On-state resistance: 124.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 4.2W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3407DV-T1-BE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3407DV-T1-GE3 Si3407DV-T1-GE3 VISHAY SI3407DV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2942 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
173+ 0.41 EUR
194+ 0.37 EUR
219+ 0.33 EUR
231+ 0.31 EUR
Mindestbestellmenge: 69
Si3410DV-T1-GE3 VISHAY si3410dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3417DV-T1-GE3 SI3417DV-T1-GE3 VISHAY si3417dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3421DV-T1-GE3 SI3421DV-T1-GE3 VISHAY si3421dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 19.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1166 Stücke:
Lieferzeit 7-14 Tag (e)
141+0.51 EUR
187+ 0.38 EUR
244+ 0.29 EUR
258+ 0.28 EUR
Mindestbestellmenge: 141
SI3424CDV-T1-BE3 VISHAY si3424cdv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3424CDV-T1-GE3 SI3424CDV-T1-GE3 VISHAY si3424cdv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 2.3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 2.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3429EDV-T1-GE3 VISHAY si3429edv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3430DV-T1-E3 VISHAY si3430dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3430DV-T1-GE3 VISHAY si3430dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3433CDV-T1-E3 VISHAY si3433cdv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3433CDV-T1-GE3 SI3433CDV-T1-GE3 VISHAY si3433cdv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3437DV-T1-E3 VISHAY si3437dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3437DV-T1-GE3 VISHAY si3437dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3438DV-T1-E3 VISHAY si3438dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3438DV-T1-GE3 VISHAY si3438dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440ADV-T1-GE3 VISHAY si3440adv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440DV-T1-E3 VISHAY si3440dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440DV-T1-GE3 SI3440DV-T1-GE3 VISHAY si3440dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 0.59W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.375Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3442BDV-T1-E3 VISHAY si3442bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3442BDV-T1-GE3 VISHAY si3442bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443BDV-T1-E3 SI3443BDV-T1-E3 VISHAY SI3443BDV.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.3W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
214+ 0.33 EUR
281+ 0.26 EUR
297+ 0.24 EUR
Mindestbestellmenge: 186
SI3443BDV-T1-GE3 VISHAY 72749.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443CDV-T1-E3 VISHAY si3443cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443CDV-T1-GE3 VISHAY SI3443CDV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 2.05W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 2.05W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3443DDV-T1-BE3 VISHAY si3443ddv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443DDV-T1-GE3 VISHAY SI3443DDV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3453DV-T1-GE3 VISHAY si3453dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3456DDV-T1-E3 VISHAY si3456ddv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3456DDV-T1-GE3 VISHAY si3456ddv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI3457CDV-T1-E3 VISHAY si3457cdv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3457CDV-T1-GE3 SI3457CDV-T1-GE3 VISHAY SI3457CDV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2015 Stücke:
Lieferzeit 7-14 Tag (e)
211+0.34 EUR
246+ 0.29 EUR
318+ 0.23 EUR
336+ 0.21 EUR
Mindestbestellmenge: 211
SI3458BDV-T1-BE3 VISHAY si3458bdv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3458BDV-T1-E3 VISHAY si3458bdv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2670 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
120+ 0.6 EUR
133+ 0.54 EUR
169+ 0.42 EUR
179+ 0.4 EUR
Mindestbestellmenge: 72
SI3459BDV-T1-E3 VISHAY si3459bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 VISHAY si3459bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)
84+0.86 EUR
115+ 0.63 EUR
163+ 0.44 EUR
227+ 0.32 EUR
240+ 0.3 EUR
Mindestbestellmenge: 84
SI3460DDV-T1-GE3 SI3460DDV-T1-GE3 VISHAY si3460ddv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Case: TSOP6
Mounting: SMD
On-state resistance: 28mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain current: 7.9A
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1860 Stücke:
Lieferzeit 7-14 Tag (e)
290+0.25 EUR
320+ 0.22 EUR
435+ 0.17 EUR
455+ 0.16 EUR
Mindestbestellmenge: 290
SI3464DV-T1-GE3 VISHAY si3464dv.pdf SI3464DV-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI3469DV-T1-E3 VISHAY si3469dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3469DV-T1-GE3 VISHAY si3469dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2356DS-T1-GE3 si2356ds.pdf
SI2356DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Kind of package: reel; tape
Technology: TrenchFET®
Mounting: SMD
Drain-source voltage: 40V
Drain current: 4.3A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5968 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
209+ 0.34 EUR
261+ 0.27 EUR
371+ 0.19 EUR
486+ 0.15 EUR
516+ 0.14 EUR
3000+ 0.13 EUR
Mindestbestellmenge: 152
SI2365EDS-T1-BE3 si2365eds.pdf
Hersteller: VISHAY
SI2365EDS-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI2365EDS-T1-GE3 si2365eds.pdf
SI2365EDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI2366DS-T1-BE3
Hersteller: VISHAY
SI2366DS-T1-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2366DS-T1-GE3 si2366ds.pdf
Hersteller: VISHAY
SI2366DS-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2367DS-T1-GE3 SI2367DS.pdf
SI2367DS-T1-GE3
+1
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369BDS-T1-GE3 si2369bds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369DS-T1-GE3 si2369d.pdf
SI2369DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Drain-source voltage: -30V
Drain current: -7.6A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2551 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
144+0.5 EUR
177+ 0.4 EUR
212+ 0.34 EUR
288+ 0.25 EUR
305+ 0.23 EUR
Mindestbestellmenge: 144
SI2371EDS-T1-GE3 si2371eds.pdf
SI2371EDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-BE3 si2374ds.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-GE3 si2374ds.pdf
SI2374DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.7A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.7A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2720 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
215+0.33 EUR
338+ 0.21 EUR
414+ 0.17 EUR
439+ 0.16 EUR
Mindestbestellmenge: 215
SI2377EDS-T1-GE3 SI2377EDS.pdf
SI2377EDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2891 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
224+ 0.32 EUR
292+ 0.25 EUR
308+ 0.23 EUR
Mindestbestellmenge: 200
SI2387DS-T1-GE3 si2387ds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2392ADS-T1-GE3 si2392ads.pdf
SI2392ADS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2392DS-T1-GE3 Si2392DS.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 10.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2393DS-T1-GE3 si2393ds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2399DS-T1-GE3 si2399ds.pdf
SI2399DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -20A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3127DV-T1-GE3 si3127dv.pdf
SI3127DV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: TSOP6
Drain-source voltage: -60V
Drain current: -5.1A
On-state resistance: 89mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3129DV-T1-GE3 si3129dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -5.4A; Idm: -20A
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Drain-source voltage: -80V
Drain current: -5.4A
On-state resistance: 124.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 4.2W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3407DV-T1-BE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3407DV-T1-GE3 SI3407DV.pdf
Si3407DV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2942 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
173+ 0.41 EUR
194+ 0.37 EUR
219+ 0.33 EUR
231+ 0.31 EUR
Mindestbestellmenge: 69
Si3410DV-T1-GE3 si3410dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3417DV-T1-GE3 si3417dv.pdf
SI3417DV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3421DV-T1-GE3 si3421dv.pdf
SI3421DV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 19.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1166 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
141+0.51 EUR
187+ 0.38 EUR
244+ 0.29 EUR
258+ 0.28 EUR
Mindestbestellmenge: 141
SI3424CDV-T1-BE3 si3424cdv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3424CDV-T1-GE3 si3424cdv.pdf
SI3424CDV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 2.3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 2.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3429EDV-T1-GE3 si3429edv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3430DV-T1-E3 si3430dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3430DV-T1-GE3 si3430dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3433CDV-T1-E3 si3433cdv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3433CDV-T1-GE3 si3433cdv.pdf
SI3433CDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3437DV-T1-E3 si3437dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3437DV-T1-GE3 si3437dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3438DV-T1-E3 si3438dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3438DV-T1-GE3 si3438dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440ADV-T1-GE3 si3440adv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440DV-T1-E3 si3440dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440DV-T1-GE3 si3440dv.pdf
SI3440DV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 0.59W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.375Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3442BDV-T1-E3 si3442bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3442BDV-T1-GE3 si3442bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443BDV-T1-E3 description SI3443BDV.pdf
SI3443BDV-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.3W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
214+ 0.33 EUR
281+ 0.26 EUR
297+ 0.24 EUR
Mindestbestellmenge: 186
SI3443BDV-T1-GE3 72749.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443CDV-T1-E3 si3443cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443CDV-T1-GE3 SI3443CDV.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 2.05W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 2.05W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3443DDV-T1-BE3 si3443ddv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443DDV-T1-GE3 SI3443DDV.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3453DV-T1-GE3 si3453dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3456DDV-T1-E3 si3456ddv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3456DDV-T1-GE3 si3456ddv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI3457CDV-T1-E3 si3457cdv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3457CDV-T1-GE3 SI3457CDV.pdf
SI3457CDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2015 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
211+0.34 EUR
246+ 0.29 EUR
318+ 0.23 EUR
336+ 0.21 EUR
Mindestbestellmenge: 211
SI3458BDV-T1-BE3 si3458bdv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3458BDV-T1-E3 si3458bdv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3458BDV-T1-GE3
SI3458BDV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2670 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
120+ 0.6 EUR
133+ 0.54 EUR
169+ 0.42 EUR
179+ 0.4 EUR
Mindestbestellmenge: 72
SI3459BDV-T1-E3 si3459bd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3459BDV-T1-GE3 si3459bd.pdf
SI3459BDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
84+0.86 EUR
115+ 0.63 EUR
163+ 0.44 EUR
227+ 0.32 EUR
240+ 0.3 EUR
Mindestbestellmenge: 84
SI3460DDV-T1-GE3 si3460ddv.pdf
SI3460DDV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Case: TSOP6
Mounting: SMD
On-state resistance: 28mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain current: 7.9A
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1860 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
290+0.25 EUR
320+ 0.22 EUR
435+ 0.17 EUR
455+ 0.16 EUR
Mindestbestellmenge: 290
SI3464DV-T1-GE3 si3464dv.pdf
Hersteller: VISHAY
SI3464DV-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI3469DV-T1-E3 si3469dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3469DV-T1-GE3 si3469dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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