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SI1869DH-T1-E3 SI1869DH-T1-E3 VISHAY SI1869DH.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; SC70
Kind of package: reel; tape
On-state resistance: 132mΩ
Output current: 1.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of integrated circuit: high-side
Mounting: SMD
Case: SC70
Supply voltage: 1.8...20V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
105+0.69 EUR
125+ 0.57 EUR
152+ 0.47 EUR
388+ 0.18 EUR
410+ 0.17 EUR
Mindestbestellmenge: 105
SI1900DL-T1-E3 VISHAY si1900dl.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1900DL-T1-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1902CDL-T1-GE3 SI1902CDL-T1-GE3 VISHAY si1902cdl.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.27W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.38 EUR
315+ 0.23 EUR
434+ 0.17 EUR
459+ 0.16 EUR
Mindestbestellmenge: 186
SI1902DL-T1-E3 SI1902DL-T1-E3 VISHAY si1902dl.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; Idm: 1A; 0.14W; SC70
Type of transistor: N-MOSFET
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.14W
On-state resistance: 0.385Ω
Polarisation: unipolar
Pulsed drain current: 1A
Gate charge: 1.2nC
Drain current: 0.66A
Kind of channel: enhanced
Drain-source voltage: 20V
Gate-source voltage: ±12V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1902DL-T1-GE3 SI1902DL-T1-GE3 VISHAY si1902dl.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A
Type of transistor: N-MOSFET x2
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.27W
On-state resistance: 630µΩ
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: 1A
Gate charge: 0.8nC
Drain current: 0.66A
Kind of channel: enhanced
Drain-source voltage: 20V
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 VISHAY si1922ed.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 4A
Power dissipation: 0.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1926DL-T1-E3 VISHAY si1926dl.pdf SI1926DL-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1926DL-T1-GE3 VISHAY si1926dl.pdf SI1926DL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1965DH-T1-E3 VISHAY SI1965DH.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1965DH-T1-GE3 VISHAY si1965dh.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1967DH-T1-E3 VISHAY si1967dh.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1967DH-T1-GE3 VISHAY si1967dh.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si2300DS-T1-GE3 Si2300DS-T1-GE3 VISHAY si2300ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 15A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2301BDS-T1-E3 VISHAY si2301bds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 VISHAY si2301bds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
129+0.56 EUR
154+ 0.46 EUR
176+ 0.41 EUR
343+ 0.21 EUR
360+ 0.2 EUR
3000+ 0.19 EUR
Mindestbestellmenge: 129
SI2301CDS-T1-E3 VISHAY si2301cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.1A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 VISHAY si2301cds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7507 Stücke:
Lieferzeit 7-14 Tag (e)
338+0.21 EUR
385+ 0.19 EUR
428+ 0.17 EUR
480+ 0.15 EUR
507+ 0.14 EUR
Mindestbestellmenge: 338
SI2302CDS-T1-GE3 SI2302CDS-T1-GE3 VISHAY si2302cds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4883 Stücke:
Lieferzeit 7-14 Tag (e)
125+0.57 EUR
147+ 0.49 EUR
198+ 0.36 EUR
371+ 0.19 EUR
391+ 0.18 EUR
Mindestbestellmenge: 125
SI2302DDS-T1-GE3 SI2302DDS-T1-GE3 VISHAY si2302dds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4735 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
176+ 0.41 EUR
232+ 0.31 EUR
293+ 0.24 EUR
496+ 0.14 EUR
Mindestbestellmenge: 132
SI2303CDS-T1-BE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2303CDS-T1-E3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2080 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
330+ 0.22 EUR
430+ 0.17 EUR
455+ 0.16 EUR
Mindestbestellmenge: 295
SI2304BDS-T1-E3 VISHAY si2304bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.2A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 VISHAY si2304bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2304DDS-T1-GE3 SI2304DDS-T1-GE3 VISHAY SI2304DDS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4116 Stücke:
Lieferzeit 7-14 Tag (e)
191+0.38 EUR
329+ 0.22 EUR
412+ 0.17 EUR
436+ 0.16 EUR
Mindestbestellmenge: 191
SI2305CDS-T1-GE3 SI2305CDS-T1-GE3 VISHAY SI2305CDS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2816 Stücke:
Lieferzeit 7-14 Tag (e)
305+0.23 EUR
329+ 0.22 EUR
382+ 0.19 EUR
407+ 0.18 EUR
3000+ 0.17 EUR
Mindestbestellmenge: 305
SI2305CDS-T1-GE3 SI2305CDS-T1-GE3 VISHAY SI2305CDS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2816 Stücke:
Lieferzeit 7-14 Tag (e)
305+0.23 EUR
329+ 0.22 EUR
382+ 0.19 EUR
407+ 0.18 EUR
3000+ 0.17 EUR
Mindestbestellmenge: 305
SI2306BDS-T1-E3 SI2306BDS-T1-E3 VISHAY SI2306BDS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2690 Stücke:
Lieferzeit 7-14 Tag (e)
117+0.61 EUR
142+ 0.5 EUR
185+ 0.39 EUR
196+ 0.37 EUR
Mindestbestellmenge: 117
SI2306BDS-T1-GE3 VISHAY si2306bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4A; Idm: 20A; 1.25W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4500000000nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2307BDS-T1-E3 SI2307BDS-T1-E3 VISHAY si2307bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 VISHAY SI2307CDS-T1-GE3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9355 Stücke:
Lieferzeit 7-14 Tag (e)
184+0.39 EUR
243+ 0.29 EUR
317+ 0.23 EUR
336+ 0.21 EUR
Mindestbestellmenge: 184
SI2308BDS-T1-E3 SI2308BDS-T1-E3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2678 Stücke:
Lieferzeit 7-14 Tag (e)
215+0.33 EUR
236+ 0.3 EUR
307+ 0.23 EUR
325+ 0.22 EUR
Mindestbestellmenge: 215
SI2308BDS-T1-GE3 SI2308BDS-T1-GE3 VISHAY si2308bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24037 Stücke:
Lieferzeit 7-14 Tag (e)
109+0.66 EUR
125+ 0.57 EUR
139+ 0.52 EUR
154+ 0.46 EUR
283+ 0.25 EUR
300+ 0.24 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 109
SI2308CDS-T1-GE3 SI2308CDS-T1-GE3 VISHAY si2308cds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2309CDS-T1-E3 VISHAY si2309cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.6A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2309CDS-T1-GE3 SI2309CDS-T1-GE3 VISHAY si2309cds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8852 Stücke:
Lieferzeit 7-14 Tag (e)
193+0.37 EUR
214+ 0.33 EUR
266+ 0.27 EUR
281+ 0.25 EUR
Mindestbestellmenge: 193
SI2312BDS-T1-E3 VISHAY si2312bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5A; Idm: 15A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 15A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2312BDS-T1-GE3 SI2312BDS-T1-GE3 VISHAY si2312bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 15A; 0.48W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 3.9A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.48W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 15A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2312CDS-T1-GE3 SI2312CDS-T1-GE3 VISHAY si2312cd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4232 Stücke:
Lieferzeit 7-14 Tag (e)
215+0.33 EUR
236+ 0.3 EUR
309+ 0.23 EUR
326+ 0.22 EUR
Mindestbestellmenge: 215
SI2314EDS-T1-E3 VISHAY si2314ed.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 51mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Gate charge: 14nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Power dissipation: 1.25W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2314EDS-T1-GE3 VISHAY si2314ed.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 51mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Gate charge: 14nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Power dissipation: 1.25W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2315BDS-T1-E3 SI2315BDS-T1-E3 VISHAY SI2315BDS-T1-E3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; 1.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3A
Power dissipation: 1.19W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5073 Stücke:
Lieferzeit 7-14 Tag (e)
117+0.61 EUR
136+ 0.53 EUR
178+ 0.4 EUR
224+ 0.32 EUR
236+ 0.3 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 117
SI2315BDS-T1-GE3 SI2315BDS-T1-GE3 VISHAY 72014.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316BDS-T1-E3 VISHAY si2316bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316BDS-T1-GE3 VISHAY si2316bd.pdf Category: SMD P channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.66W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316DS-T1-E3 SI2316DS-T1-E3 VISHAY si2316ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.45W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
132+ 0.54 EUR
151+ 0.47 EUR
174+ 0.41 EUR
184+ 0.39 EUR
Mindestbestellmenge: 76
SI2316DS-T1-GE3 VISHAY si2316ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 16A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 VISHAY si2318cds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1713 Stücke:
Lieferzeit 7-14 Tag (e)
206+0.35 EUR
293+ 0.24 EUR
378+ 0.19 EUR
399+ 0.18 EUR
Mindestbestellmenge: 206
SI2318DS-T1-E3 SI2318DS-T1-E3 VISHAY SI2318DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 0.75W
Polarisation: unipolar
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Drain-source voltage: 40V
Drain current: 3A
On-state resistance: 58mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2318DS-T1-GE3 SI2318DS-T1-GE3 VISHAY SI2318DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)
171+0.42 EUR
190+ 0.38 EUR
248+ 0.29 EUR
262+ 0.27 EUR
Mindestbestellmenge: 171
SI2319CDS-T1-BE3 VISHAY si2319cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.4A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 VISHAY si2319cds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10646 Stücke:
Lieferzeit 7-14 Tag (e)
133+0.54 EUR
166+ 0.43 EUR
216+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 133
SI2319DDS-T1-GE3 SI2319DDS-T1-GE3 VISHAY si2319dds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2891 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
162+ 0.44 EUR
194+ 0.37 EUR
214+ 0.33 EUR
280+ 0.26 EUR
296+ 0.24 EUR
Mindestbestellmenge: 132
SI2319DS-T1-E3 SI2319DS-T1-E3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4062 Stücke:
Lieferzeit 7-14 Tag (e)
57+1.26 EUR
98+ 0.74 EUR
108+ 0.66 EUR
141+ 0.51 EUR
149+ 0.48 EUR
Mindestbestellmenge: 57
SI2319DS-T1-GE3 SI2319DS-T1-GE3 VISHAY si2319ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
96+ 0.75 EUR
123+ 0.58 EUR
161+ 0.45 EUR
170+ 0.42 EUR
3000+ 0.41 EUR
Mindestbestellmenge: 81
SI2323CDS-T1-BE3 VISHAY si2323cds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2323CDS-T1-GE3 SI2323CDS-T1-GE3 VISHAY si2323cds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2323DDS-T1-GE3 SI2323DDS-T1-GE3 VISHAY SI2323DDS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
159+ 0.45 EUR
218+ 0.33 EUR
231+ 0.31 EUR
Mindestbestellmenge: 143
SI2323DS-T1-E3 SI2323DS-T1-E3 VISHAY SI2323DS-T1-E3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3985 Stücke:
Lieferzeit 7-14 Tag (e)
90+0.8 EUR
104+ 0.69 EUR
125+ 0.57 EUR
132+ 0.54 EUR
Mindestbestellmenge: 90
SI1869DH-T1-E3 SI1869DH.pdf
SI1869DH-T1-E3
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; SC70
Kind of package: reel; tape
On-state resistance: 132mΩ
Output current: 1.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of integrated circuit: high-side
Mounting: SMD
Case: SC70
Supply voltage: 1.8...20V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
105+0.69 EUR
125+ 0.57 EUR
152+ 0.47 EUR
388+ 0.18 EUR
410+ 0.17 EUR
Mindestbestellmenge: 105
SI1900DL-T1-E3 si1900dl.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1900DL-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1902CDL-T1-GE3 si1902cdl.pdf
SI1902CDL-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.27W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.38 EUR
315+ 0.23 EUR
434+ 0.17 EUR
459+ 0.16 EUR
Mindestbestellmenge: 186
SI1902DL-T1-E3 si1902dl.pdf
SI1902DL-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; Idm: 1A; 0.14W; SC70
Type of transistor: N-MOSFET
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.14W
On-state resistance: 0.385Ω
Polarisation: unipolar
Pulsed drain current: 1A
Gate charge: 1.2nC
Drain current: 0.66A
Kind of channel: enhanced
Drain-source voltage: 20V
Gate-source voltage: ±12V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1902DL-T1-GE3 si1902dl.pdf
SI1902DL-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A
Type of transistor: N-MOSFET x2
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.27W
On-state resistance: 630µΩ
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: 1A
Gate charge: 0.8nC
Drain current: 0.66A
Kind of channel: enhanced
Drain-source voltage: 20V
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1922EDH-T1-GE3 si1922ed.pdf
SI1922EDH-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 4A
Power dissipation: 0.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1926DL-T1-E3 si1926dl.pdf
Hersteller: VISHAY
SI1926DL-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1926DL-T1-GE3 si1926dl.pdf
Hersteller: VISHAY
SI1926DL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1965DH-T1-E3 SI1965DH.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1965DH-T1-GE3 si1965dh.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1967DH-T1-E3 si1967dh.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1967DH-T1-GE3 si1967dh.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si2300DS-T1-GE3 si2300ds.pdf
Si2300DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 15A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2301BDS-T1-E3 si2301bds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2301BDS-T1-GE3 si2301bds.pdf
SI2301BDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
129+0.56 EUR
154+ 0.46 EUR
176+ 0.41 EUR
343+ 0.21 EUR
360+ 0.2 EUR
3000+ 0.19 EUR
Mindestbestellmenge: 129
SI2301CDS-T1-E3 si2301cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.1A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2301CDS-T1-GE3 si2301cds.pdf
SI2301CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7507 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
338+0.21 EUR
385+ 0.19 EUR
428+ 0.17 EUR
480+ 0.15 EUR
507+ 0.14 EUR
Mindestbestellmenge: 338
SI2302CDS-T1-GE3 si2302cds.pdf
SI2302CDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4883 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
125+0.57 EUR
147+ 0.49 EUR
198+ 0.36 EUR
371+ 0.19 EUR
391+ 0.18 EUR
Mindestbestellmenge: 125
SI2302DDS-T1-GE3 si2302dds.pdf
SI2302DDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4735 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
176+ 0.41 EUR
232+ 0.31 EUR
293+ 0.24 EUR
496+ 0.14 EUR
Mindestbestellmenge: 132
SI2303CDS-T1-BE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2303CDS-T1-E3 si2303cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2303CDS-T1-GE3 si2303cd.pdf
SI2303CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2080 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
330+ 0.22 EUR
430+ 0.17 EUR
455+ 0.16 EUR
Mindestbestellmenge: 295
SI2304BDS-T1-E3 si2304bds.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.2A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2304BDS-T1-GE3 si2304bds.pdf
SI2304BDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2304DDS-T1-GE3 SI2304DDS.pdf
SI2304DDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4116 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
191+0.38 EUR
329+ 0.22 EUR
412+ 0.17 EUR
436+ 0.16 EUR
Mindestbestellmenge: 191
SI2305CDS-T1-GE3 SI2305CDS.pdf
SI2305CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2816 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
305+0.23 EUR
329+ 0.22 EUR
382+ 0.19 EUR
407+ 0.18 EUR
3000+ 0.17 EUR
Mindestbestellmenge: 305
SI2305CDS-T1-GE3 SI2305CDS.pdf
SI2305CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2816 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
305+0.23 EUR
329+ 0.22 EUR
382+ 0.19 EUR
407+ 0.18 EUR
3000+ 0.17 EUR
Mindestbestellmenge: 305
SI2306BDS-T1-E3 SI2306BDS.pdf
SI2306BDS-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2690 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
117+0.61 EUR
142+ 0.5 EUR
185+ 0.39 EUR
196+ 0.37 EUR
Mindestbestellmenge: 117
SI2306BDS-T1-GE3 si2306bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4A; Idm: 20A; 1.25W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4500000000nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2307BDS-T1-E3 si2307bd.pdf
SI2307BDS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2307CDS-T1-GE3 SI2307CDS-T1-GE3.pdf
SI2307CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9355 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
184+0.39 EUR
243+ 0.29 EUR
317+ 0.23 EUR
336+ 0.21 EUR
Mindestbestellmenge: 184
SI2308BDS-T1-E3
SI2308BDS-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2678 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
215+0.33 EUR
236+ 0.3 EUR
307+ 0.23 EUR
325+ 0.22 EUR
Mindestbestellmenge: 215
SI2308BDS-T1-GE3 si2308bds.pdf
SI2308BDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24037 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
109+0.66 EUR
125+ 0.57 EUR
139+ 0.52 EUR
154+ 0.46 EUR
283+ 0.25 EUR
300+ 0.24 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 109
SI2308CDS-T1-GE3 si2308cds.pdf
SI2308CDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2309CDS-T1-E3 si2309cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.6A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2309CDS-T1-GE3 si2309cds.pdf
SI2309CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8852 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
193+0.37 EUR
214+ 0.33 EUR
266+ 0.27 EUR
281+ 0.25 EUR
Mindestbestellmenge: 193
SI2312BDS-T1-E3 si2312bds.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5A; Idm: 15A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 15A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2312BDS-T1-GE3 si2312bds.pdf
SI2312BDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 15A; 0.48W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 3.9A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.48W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 15A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2312CDS-T1-GE3 si2312cd.pdf
SI2312CDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4232 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
215+0.33 EUR
236+ 0.3 EUR
309+ 0.23 EUR
326+ 0.22 EUR
Mindestbestellmenge: 215
SI2314EDS-T1-E3 si2314ed.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 51mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Gate charge: 14nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Power dissipation: 1.25W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2314EDS-T1-GE3 si2314ed.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 51mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Gate charge: 14nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Power dissipation: 1.25W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2315BDS-T1-E3 SI2315BDS-T1-E3.pdf
SI2315BDS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; 1.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3A
Power dissipation: 1.19W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5073 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
117+0.61 EUR
136+ 0.53 EUR
178+ 0.4 EUR
224+ 0.32 EUR
236+ 0.3 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 117
SI2315BDS-T1-GE3 72014.pdf
SI2315BDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316BDS-T1-E3 si2316bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316BDS-T1-GE3 si2316bd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.66W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316DS-T1-E3 si2316ds.pdf
SI2316DS-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.45W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
132+ 0.54 EUR
151+ 0.47 EUR
174+ 0.41 EUR
184+ 0.39 EUR
Mindestbestellmenge: 76
SI2316DS-T1-GE3 si2316ds.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 16A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2318CDS-T1-GE3 si2318cds.pdf
SI2318CDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1713 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
206+0.35 EUR
293+ 0.24 EUR
378+ 0.19 EUR
399+ 0.18 EUR
Mindestbestellmenge: 206
SI2318DS-T1-E3 SI2318DS.pdf
SI2318DS-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 0.75W
Polarisation: unipolar
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Drain-source voltage: 40V
Drain current: 3A
On-state resistance: 58mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2318DS-T1-GE3 SI2318DS.pdf
SI2318DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
171+0.42 EUR
190+ 0.38 EUR
248+ 0.29 EUR
262+ 0.27 EUR
Mindestbestellmenge: 171
SI2319CDS-T1-BE3 si2319cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.4A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2319CDS-T1-GE3 si2319cds.pdf
SI2319CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10646 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
133+0.54 EUR
166+ 0.43 EUR
216+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 133
SI2319DDS-T1-GE3 si2319dds.pdf
SI2319DDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2891 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
162+ 0.44 EUR
194+ 0.37 EUR
214+ 0.33 EUR
280+ 0.26 EUR
296+ 0.24 EUR
Mindestbestellmenge: 132
SI2319DS-T1-E3
SI2319DS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4062 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
57+1.26 EUR
98+ 0.74 EUR
108+ 0.66 EUR
141+ 0.51 EUR
149+ 0.48 EUR
Mindestbestellmenge: 57
SI2319DS-T1-GE3 si2319ds.pdf
SI2319DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
96+ 0.75 EUR
123+ 0.58 EUR
161+ 0.45 EUR
170+ 0.42 EUR
3000+ 0.41 EUR
Mindestbestellmenge: 81
SI2323CDS-T1-BE3 si2323cds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2323CDS-T1-GE3 si2323cds.pdf
SI2323CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2323DDS-T1-GE3 SI2323DDS.pdf
SI2323DDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
159+ 0.45 EUR
218+ 0.33 EUR
231+ 0.31 EUR
Mindestbestellmenge: 143
SI2323DS-T1-E3 SI2323DS-T1-E3.pdf
SI2323DS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3985 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
90+0.8 EUR
104+ 0.69 EUR
125+ 0.57 EUR
132+ 0.54 EUR
Mindestbestellmenge: 90
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