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SI1029X-T1-GE3 VISHAY si1029x.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60V; 0.22/-0.135A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22/-0.135A
Pulsed drain current: 0.65A
Power dissipation: 0.13W
Case: SC89
Gate-source voltage: ±20V
On-state resistance: 3/8Ω
Mounting: SMD
Gate charge: 0.75/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1031R-T1-GE3 VISHAY si1031r.pdf SI1031R-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1032R-T1-GE3 VISHAY si1032r.pdf SI1032R-T1-GE3 SMD N channel transistors
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
202+0.35 EUR
309+ 0.23 EUR
327+ 0.22 EUR
Mindestbestellmenge: 202
SI1032X-T1-GE3 VISHAY si1032rx.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 210mA; Idm: 0.6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.21A
Pulsed drain current: 0.6A
Power dissipation: 0.34W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1034CX-T1-GE3 VISHAY si1034cx.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.49A; 0.14W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.49A
Power dissipation: 0.14W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 396mΩ
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1034X-T1-GE3 VISHAY 71427.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 190mA; Idm: 0.65A
Mounting: SMD
Case: SC89; SOT563
Kind of package: reel; tape
Power dissipation: 0.28W
Polarisation: unipolar
Gate charge: 0.75nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 0.65A
Drain-source voltage: 20V
Drain current: 0.19A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1036X-T1-GE3 SI1036X-T1-GE3 VISHAY si1036x.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 610mA; Idm: 2A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 610mA
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
200+ 0.36 EUR
269+ 0.27 EUR
358+ 0.2 EUR
603+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 143
SI1040X-T1-GE3 VISHAY SI1040X.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1050X-T1-GE3 VISHAY si1050x.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A
Mounting: SMD
Case: SC89; SOT563
Kind of package: reel; tape
Power dissipation: 236mW
Polarisation: unipolar
Gate charge: 11.6nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 6A
Drain-source voltage: 8V
Drain current: 1.34A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1062X-T1-GE3 VISHAY si1062x.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.53A
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 762mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
325+0.22 EUR
460+ 0.16 EUR
515+ 0.14 EUR
660+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 325
SI1070X-T1-GE3 VISHAY si1070x.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.2A; Idm: 6A
Power dissipation: 236mW
Kind of package: reel; tape
Case: SC89; SOT563
Mounting: SMD
Drain-source voltage: 30V
Drain current: 1.2A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 8.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1077X-T1-GE3 VISHAY si1077x.pdf SI1077X-T1-GE3 SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
481+ 0.15 EUR
511+ 0.14 EUR
Mindestbestellmenge: 132
Si1078X-T1-GE3 VISHAY si1078x.pdf SI1078X-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1079X-T1-GE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -1.44A; Idm: -8A
Mounting: SMD
Case: SC89
Drain-source voltage: -30V
Drain current: -1.44A
On-state resistance: 0.14Ω
Type of transistor: P-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1302DL-T1-E3 SI1302DL-T1-E3 VISHAY si1302dl.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.6A; Idm: 1.5A; 0.18W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.5A
Power dissipation: 0.18W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 480mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI1302DL-T1-GE3 VISHAY SI1302DL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; 0.18W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Power dissipation: 0.18W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 480mΩ
Mounting: SMD
Gate charge: 0.86nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI1308EDL-T1-GE3 SI1308EDL-T1-GE3 VISHAY si1308edl.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Pulsed drain current: 6A
Power dissipation: 0.3W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
211+0.34 EUR
278+ 0.26 EUR
383+ 0.19 EUR
405+ 0.18 EUR
Mindestbestellmenge: 211
SI1317DL-T1-BE3 VISHAY si1317dl.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.4A; Idm: -6A
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.27Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -6A
Mounting: SMD
Case: SC70; SOT323
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1317DL-T1-GE3 SI1317DL-T1-GE3 VISHAY si1317dl.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -6A; 0.3W; SC70
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -6A
Mounting: SMD
Case: SC70
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2998 Stücke:
Lieferzeit 7-14 Tag (e)
125+0.57 EUR
173+ 0.41 EUR
277+ 0.26 EUR
424+ 0.17 EUR
451+ 0.16 EUR
Mindestbestellmenge: 125
SI1330EDL-T1-BE3 VISHAY SI1330ED.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1330EDL-T1-E3 SI1330EDL-T1-E3 VISHAY SI1330ED.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70
Case: SC70
Mounting: SMD
Gate charge: 0.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.19A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
Power dissipation: 0.18W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1330EDL-T1-GE3 VISHAY si1330ed.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1401EDH-T1-GE3 VISHAY si1401edh.pdf SI1401EDH-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1403BDL-T1-E3 VISHAY si1403bdl.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Power dissipation: 0.625W
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1403BDL-T1-GE3 SI1403BDL-T1-GE3 VISHAY si1403bdl.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Power dissipation: 0.625W
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1403CDL-T1-GE3 VISHAY SI1403CDL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.6W; SC70-6
Case: SC70-6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.6W
Gate charge: 4nC
Polarisation: unipolar
Drain current: -1.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
On-state resistance: 140mΩ
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1411DH-T1-GE3 VISHAY SI1411DH.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.38A; 0.81W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -0.38A
Power dissipation: 0.81W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1416EDH-T1-GE3 VISHAY si1416ed.pdf SI1416EDH-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1424EDH-T1-GE3 SI1424EDH-T1-GE3 VISHAY SI1424EDH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1427EDH-T1-GE3 SI1427EDH-T1-GE3 VISHAY si1427ed.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1428EDH-T1-GE3 SI1428EDH-T1-GE3 VISHAY si1428edh.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1441EDH-T1-GE3 VISHAY si1441ed.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -25A
Case: SC70-6; SOT363
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -25A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1442DH-T1-GE3 VISHAY si1442dh.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Mounting: SMD
Case: SC70-6; SOT363
Pulsed drain current: 20A
Power dissipation: 2.8W
Gate charge: 33nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 30mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1443EDH-T1-GE3 SI1443EDH-T1-GE3 VISHAY si1443edh.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1467DH-T1-E3 VISHAY si1467dh.pdf SI1467DH-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1467DH-T1-GE3 VISHAY si1467dh.pdf SI1467DH-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1469DH-T1-E3 VISHAY si1469dh.pdf SI1469DH-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1469DH-T1-GE3 VISHAY si1469dh.pdf SI1469DH-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1480DH-T1-GE3 VISHAY si1480dh.pdf SI1480DH-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1499DH-T1-E3 VISHAY si1499dh.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Power dissipation: 2.78W
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1499DH-T1-GE3 VISHAY si1499dh.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Power dissipation: 2.78W
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1539CDL-T1-GE3 VISHAY si1539cdl.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 700/-500mA
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 700/-500mA
On-state resistance: 1.7Ω/525mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.34W
Polarisation: unipolar
Gate charge: 3/1.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC70; SOT363
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1553CDL-T1-GE3 VISHAY si1553cdl.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -500/700mA
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20/20V
Drain current: -500/700mA
Pulsed drain current: -1...2A
Power dissipation: 0.34W
Case: SC70; SOT363
Gate-source voltage: ±12V
On-state resistance: 1.35/1.13Ω
Mounting: SMD
Gate charge: 3/1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1865DDL-T1-GE3 SI1865DDL-T1-GE3 VISHAY Si1865DDL.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.1A; Ch: 1; P-Channel; SMD; SC70
Supply voltage: 1.8...12V DC
Output current: 1.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
Mounting: SMD
Case: SC70
On-state resistance: 0.165Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1869DH-T1-E3 SI1869DH-T1-E3 VISHAY SI1869DH.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; SC70
Kind of package: reel; tape
On-state resistance: 132mΩ
Output current: 1.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of integrated circuit: high-side
Mounting: SMD
Case: SC70
Supply voltage: 1.8...20V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
105+0.69 EUR
125+ 0.57 EUR
152+ 0.47 EUR
388+ 0.18 EUR
410+ 0.17 EUR
Mindestbestellmenge: 105
SI1900DL-T1-E3 VISHAY si1900dl.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1900DL-T1-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1902CDL-T1-GE3 SI1902CDL-T1-GE3 VISHAY si1902cdl.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.27W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.38 EUR
315+ 0.23 EUR
434+ 0.17 EUR
459+ 0.16 EUR
Mindestbestellmenge: 186
SI1902DL-T1-E3 SI1902DL-T1-E3 VISHAY si1902dl.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; Idm: 1A; 0.14W; SC70
Type of transistor: N-MOSFET
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.14W
On-state resistance: 0.385Ω
Polarisation: unipolar
Pulsed drain current: 1A
Gate charge: 1.2nC
Drain current: 0.66A
Kind of channel: enhanced
Drain-source voltage: 20V
Gate-source voltage: ±12V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1902DL-T1-GE3 SI1902DL-T1-GE3 VISHAY si1902dl.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A
Type of transistor: N-MOSFET x2
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.27W
On-state resistance: 630µΩ
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: 1A
Gate charge: 0.8nC
Drain current: 0.66A
Kind of channel: enhanced
Drain-source voltage: 20V
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 VISHAY si1922ed.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 4A
Power dissipation: 0.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1926DL-T1-E3 VISHAY si1926dl.pdf SI1926DL-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1926DL-T1-GE3 VISHAY si1926dl.pdf SI1926DL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1965DH-T1-E3 VISHAY SI1965DH.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1965DH-T1-GE3 VISHAY si1965dh.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1967DH-T1-E3 VISHAY si1967dh.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1967DH-T1-GE3 VISHAY si1967dh.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si2300DS-T1-GE3 Si2300DS-T1-GE3 VISHAY si2300ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 15A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2301BDS-T1-E3 VISHAY si2301bds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 VISHAY si2301bds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
129+0.56 EUR
154+ 0.46 EUR
176+ 0.41 EUR
343+ 0.21 EUR
360+ 0.2 EUR
3000+ 0.19 EUR
Mindestbestellmenge: 129
SI1029X-T1-GE3 si1029x.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60V; 0.22/-0.135A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22/-0.135A
Pulsed drain current: 0.65A
Power dissipation: 0.13W
Case: SC89
Gate-source voltage: ±20V
On-state resistance: 3/8Ω
Mounting: SMD
Gate charge: 0.75/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1031R-T1-GE3 si1031r.pdf
Hersteller: VISHAY
SI1031R-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1032R-T1-GE3 si1032r.pdf
Hersteller: VISHAY
SI1032R-T1-GE3 SMD N channel transistors
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
202+0.35 EUR
309+ 0.23 EUR
327+ 0.22 EUR
Mindestbestellmenge: 202
SI1032X-T1-GE3 si1032rx.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 210mA; Idm: 0.6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.21A
Pulsed drain current: 0.6A
Power dissipation: 0.34W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1034CX-T1-GE3 si1034cx.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.49A; 0.14W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.49A
Power dissipation: 0.14W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 396mΩ
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1034X-T1-GE3 71427.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 190mA; Idm: 0.65A
Mounting: SMD
Case: SC89; SOT563
Kind of package: reel; tape
Power dissipation: 0.28W
Polarisation: unipolar
Gate charge: 0.75nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 0.65A
Drain-source voltage: 20V
Drain current: 0.19A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1036X-T1-GE3 si1036x.pdf
SI1036X-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 610mA; Idm: 2A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 610mA
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
200+ 0.36 EUR
269+ 0.27 EUR
358+ 0.2 EUR
603+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 143
SI1040X-T1-GE3 SI1040X.pdf
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1050X-T1-GE3 si1050x.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A
Mounting: SMD
Case: SC89; SOT563
Kind of package: reel; tape
Power dissipation: 236mW
Polarisation: unipolar
Gate charge: 11.6nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 6A
Drain-source voltage: 8V
Drain current: 1.34A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1062X-T1-GE3 si1062x.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.53A
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 762mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
460+ 0.16 EUR
515+ 0.14 EUR
660+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 325
SI1070X-T1-GE3 si1070x.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.2A; Idm: 6A
Power dissipation: 236mW
Kind of package: reel; tape
Case: SC89; SOT563
Mounting: SMD
Drain-source voltage: 30V
Drain current: 1.2A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 8.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1077X-T1-GE3 si1077x.pdf
Hersteller: VISHAY
SI1077X-T1-GE3 SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
481+ 0.15 EUR
511+ 0.14 EUR
Mindestbestellmenge: 132
Si1078X-T1-GE3 si1078x.pdf
Hersteller: VISHAY
SI1078X-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1079X-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -1.44A; Idm: -8A
Mounting: SMD
Case: SC89
Drain-source voltage: -30V
Drain current: -1.44A
On-state resistance: 0.14Ω
Type of transistor: P-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1302DL-T1-E3 si1302dl.pdf
SI1302DL-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.6A; Idm: 1.5A; 0.18W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.5A
Power dissipation: 0.18W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 480mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI1302DL-T1-GE3 SI1302DL.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; 0.18W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Power dissipation: 0.18W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 480mΩ
Mounting: SMD
Gate charge: 0.86nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI1308EDL-T1-GE3 si1308edl.pdf
SI1308EDL-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Pulsed drain current: 6A
Power dissipation: 0.3W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
211+0.34 EUR
278+ 0.26 EUR
383+ 0.19 EUR
405+ 0.18 EUR
Mindestbestellmenge: 211
SI1317DL-T1-BE3 si1317dl.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.4A; Idm: -6A
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.27Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -6A
Mounting: SMD
Case: SC70; SOT323
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1317DL-T1-GE3 si1317dl.pdf
SI1317DL-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -6A; 0.3W; SC70
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -6A
Mounting: SMD
Case: SC70
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2998 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
125+0.57 EUR
173+ 0.41 EUR
277+ 0.26 EUR
424+ 0.17 EUR
451+ 0.16 EUR
Mindestbestellmenge: 125
SI1330EDL-T1-BE3 SI1330ED.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1330EDL-T1-E3 SI1330ED.pdf
SI1330EDL-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70
Case: SC70
Mounting: SMD
Gate charge: 0.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.19A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
Power dissipation: 0.18W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1330EDL-T1-GE3 si1330ed.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1401EDH-T1-GE3 si1401edh.pdf
Hersteller: VISHAY
SI1401EDH-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1403BDL-T1-E3 si1403bdl.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Power dissipation: 0.625W
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1403BDL-T1-GE3 si1403bdl.pdf
SI1403BDL-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Power dissipation: 0.625W
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1403CDL-T1-GE3 SI1403CDL.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.6W; SC70-6
Case: SC70-6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.6W
Gate charge: 4nC
Polarisation: unipolar
Drain current: -1.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
On-state resistance: 140mΩ
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1411DH-T1-GE3 SI1411DH.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.38A; 0.81W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -0.38A
Power dissipation: 0.81W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1416EDH-T1-GE3 si1416ed.pdf
Hersteller: VISHAY
SI1416EDH-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1424EDH-T1-GE3 SI1424EDH.pdf
SI1424EDH-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1427EDH-T1-GE3 si1427ed.pdf
SI1427EDH-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1428EDH-T1-GE3 si1428edh.pdf
SI1428EDH-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1441EDH-T1-GE3 si1441ed.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -25A
Case: SC70-6; SOT363
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -25A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1442DH-T1-GE3 si1442dh.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Mounting: SMD
Case: SC70-6; SOT363
Pulsed drain current: 20A
Power dissipation: 2.8W
Gate charge: 33nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 30mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1443EDH-T1-GE3 si1443edh.pdf
SI1443EDH-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1467DH-T1-E3 si1467dh.pdf
Hersteller: VISHAY
SI1467DH-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1467DH-T1-GE3 si1467dh.pdf
Hersteller: VISHAY
SI1467DH-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1469DH-T1-E3 si1469dh.pdf
Hersteller: VISHAY
SI1469DH-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1469DH-T1-GE3 si1469dh.pdf
Hersteller: VISHAY
SI1469DH-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI1480DH-T1-GE3 si1480dh.pdf
Hersteller: VISHAY
SI1480DH-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1499DH-T1-E3 si1499dh.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Power dissipation: 2.78W
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1499DH-T1-GE3 si1499dh.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Power dissipation: 2.78W
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1539CDL-T1-GE3 si1539cdl.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 700/-500mA
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 700/-500mA
On-state resistance: 1.7Ω/525mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.34W
Polarisation: unipolar
Gate charge: 3/1.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC70; SOT363
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1553CDL-T1-GE3 si1553cdl.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -500/700mA
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20/20V
Drain current: -500/700mA
Pulsed drain current: -1...2A
Power dissipation: 0.34W
Case: SC70; SOT363
Gate-source voltage: ±12V
On-state resistance: 1.35/1.13Ω
Mounting: SMD
Gate charge: 3/1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1865DDL-T1-GE3 Si1865DDL.pdf
SI1865DDL-T1-GE3
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.1A; Ch: 1; P-Channel; SMD; SC70
Supply voltage: 1.8...12V DC
Output current: 1.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
Mounting: SMD
Case: SC70
On-state resistance: 0.165Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1869DH-T1-E3 SI1869DH.pdf
SI1869DH-T1-E3
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; SC70
Kind of package: reel; tape
On-state resistance: 132mΩ
Output current: 1.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of integrated circuit: high-side
Mounting: SMD
Case: SC70
Supply voltage: 1.8...20V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
105+0.69 EUR
125+ 0.57 EUR
152+ 0.47 EUR
388+ 0.18 EUR
410+ 0.17 EUR
Mindestbestellmenge: 105
SI1900DL-T1-E3 si1900dl.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1900DL-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1902CDL-T1-GE3 si1902cdl.pdf
SI1902CDL-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.27W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.38 EUR
315+ 0.23 EUR
434+ 0.17 EUR
459+ 0.16 EUR
Mindestbestellmenge: 186
SI1902DL-T1-E3 si1902dl.pdf
SI1902DL-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; Idm: 1A; 0.14W; SC70
Type of transistor: N-MOSFET
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.14W
On-state resistance: 0.385Ω
Polarisation: unipolar
Pulsed drain current: 1A
Gate charge: 1.2nC
Drain current: 0.66A
Kind of channel: enhanced
Drain-source voltage: 20V
Gate-source voltage: ±12V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1902DL-T1-GE3 si1902dl.pdf
SI1902DL-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A
Type of transistor: N-MOSFET x2
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.27W
On-state resistance: 630µΩ
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: 1A
Gate charge: 0.8nC
Drain current: 0.66A
Kind of channel: enhanced
Drain-source voltage: 20V
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI1922EDH-T1-GE3 si1922ed.pdf
SI1922EDH-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 4A
Power dissipation: 0.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1926DL-T1-E3 si1926dl.pdf
Hersteller: VISHAY
SI1926DL-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1926DL-T1-GE3 si1926dl.pdf
Hersteller: VISHAY
SI1926DL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI1965DH-T1-E3 SI1965DH.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1965DH-T1-GE3 si1965dh.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1967DH-T1-E3 si1967dh.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1967DH-T1-GE3 si1967dh.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si2300DS-T1-GE3 si2300ds.pdf
Si2300DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 15A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2301BDS-T1-E3 si2301bds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2301BDS-T1-GE3 si2301bds.pdf
SI2301BDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
129+0.56 EUR
154+ 0.46 EUR
176+ 0.41 EUR
343+ 0.21 EUR
360+ 0.2 EUR
3000+ 0.19 EUR
Mindestbestellmenge: 129
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