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SIHB35N60EF-GE3 VISHAY sihb35n60ef.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB4N80E-GE3 VISHAY sihb4n80e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB6N65E-GE3 VISHAY sihb6n65e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB6N80E-GE3 VISHAY sihb6n80e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.4A; Idm: 15A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.4A
Pulsed drain current: 15A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB8N50D-GE3 VISHAY sihb8n50d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD12N50E-GE3 VISHAY sihd12n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 21A
Power dissipation: 114W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SiHD14N60E-GE3 VISHAY sihd14n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 147W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 309mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD180N60E-GE3 VISHAY sihd180n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 156W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.195Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD186N60EF-GE3 VISHAY sihd186n60ef.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 156W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 201mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD1K4N60E-GE3 VISHAY sihd1k4n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 5A; 63W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 5A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD240N60E-GE3 VISHAY sihd240n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD2N80AE-GE3 SIHD2N80AE-GE3 VISHAY sihd2n80ae.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Drain current: 1.8A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Pulsed drain current: 3.6A
Power dissipation: 62.5W
Gate charge: 10.5nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.65 EUR
32+ 2.23 EUR
Mindestbestellmenge: 27
SIHD2N80E-GE3 VISHAY sihd2n80e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.8A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 2.75Ω
Pulsed drain current: 5A
Power dissipation: 62.5W
Gate charge: 19.6nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD3N50D-GE3 VISHAY sihd3n50d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.9A
Pulsed drain current: 5.5A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD4N80E-GE3 VISHAY sihd4n80e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD5N50D-GE3 VISHAY sihd5n50d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 104W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD690N60E-GE3 VISHAY sihd690n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 11A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 11A
Power dissipation: 62.5W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD6N62E-GE3 VISHAY sihd6n62e.pdf SIHD6N62E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHD6N65E-GE3 VISHAY sihd6n65e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD6N80AE-GE3 VISHAY sihd6n80ae.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 62.5W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD6N80E-GE3 VISHAY sihd6n80e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; Idm: 15A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Pulsed drain current: 15A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD7N60E-GE3 VISHAY sihd7n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD9N60E-GE3 VISHAY sihd9n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 22A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 22A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 368mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF065N60E-GE3 VISHAY sihf065n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 116A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF068N60EF-GE3 VISHAY sihf068n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 115A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 115A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHF10N40D-E3 VISHAY sihf10n40d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 23A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF12N60E-GE3 VISHAY sihf12n6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF12N65E-GE3 VISHAY sihf12n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF15N60E-GE3 VISHAY sihf15n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF15N65E-GE3 VISHAY sihf15n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF18N50D-E3 VISHAY sihf18n50d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 53A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF22N60E-GE3 VISHAY sihf22n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF22N65E-GE3 VISHAY sihf22n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 56A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF23N60E-GE3 VISHAY sihf23n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 63A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 63A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 158mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF28N60EF-GE3 VISHAY sihf28n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF30N60E-GE3 SIHF30N60E-GE3 VISHAY sihf30n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 676A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF35N60EF-GE3 VISHAY sihf35n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF530S-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF530STRL-GE3 VISHAY sihf530s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF530STRR-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF540S-GE3 VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 100V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF5N50D-E3 VISHAY sihf5n50d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 28.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 28.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF610S-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.1A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.1A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHF620S-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W
Case: D2PAK; TO263
Mounting: SMD
Pulsed drain current: 18A
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.8Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF620STRL-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W
Case: D2PAK; TO263
Mounting: SMD
Pulsed drain current: 18A
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.8Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF634STRR-GE3 VISHAY SIHF634STRR-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF640L-GE3 VISHAY SIHF640L-GE3 THT N channel transistors
Produkt ist nicht verfügbar
SIHF640S-GE3 VISHAY sihf640s.pdf SIHF640S-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF644S-GE3 VISHAY SIHF644S-GE3 SMD N channel transistors
auf Bestellung 994 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.6 EUR
69+ 1.04 EUR
73+ 0.99 EUR
Mindestbestellmenge: 45
SIHF644STRL-GE3 VISHAY SIHF644STRL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF6N40D-E3 VISHAY sihf6n40d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 4A; Idm: 13A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 4A
Pulsed drain current: 13A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF6N65E-GE3 VISHAY sihf6n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF730STRL-GE3 VISHAY SIHF730STRL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF740AL-GE3 VISHAY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF740STRL-GE3 VISHAY SIHF740STRL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF7N60E-E3 VISHAY sihf7n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF830STRL-GE3 VISHAY SIHF830STRL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF840AS-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF840S-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF8N50D-E3 VISHAY sihfp8n50d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB35N60EF-GE3 sihb35n60ef.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB4N80E-GE3 sihb4n80e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB6N65E-GE3 sihb6n65e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB6N80E-GE3 sihb6n80e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.4A; Idm: 15A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.4A
Pulsed drain current: 15A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB8N50D-GE3 sihb8n50d.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD12N50E-GE3 sihd12n50e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 21A
Power dissipation: 114W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SiHD14N60E-GE3 sihd14n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 147W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 309mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD180N60E-GE3 sihd180n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 156W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.195Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD186N60EF-GE3 sihd186n60ef.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 156W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 201mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD1K4N60E-GE3 sihd1k4n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 5A; 63W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 5A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD240N60E-GE3 sihd240n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD2N80AE-GE3 sihd2n80ae.pdf
SIHD2N80AE-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Drain current: 1.8A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Pulsed drain current: 3.6A
Power dissipation: 62.5W
Gate charge: 10.5nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.65 EUR
32+ 2.23 EUR
Mindestbestellmenge: 27
SIHD2N80E-GE3 sihd2n80e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.8A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 2.75Ω
Pulsed drain current: 5A
Power dissipation: 62.5W
Gate charge: 19.6nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD3N50D-GE3 sihd3n50d.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.9A
Pulsed drain current: 5.5A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD4N80E-GE3 sihd4n80e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD5N50D-GE3 sihd5n50d.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 104W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD690N60E-GE3 sihd690n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 11A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 11A
Power dissipation: 62.5W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD6N62E-GE3 sihd6n62e.pdf
Hersteller: VISHAY
SIHD6N62E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHD6N65E-GE3 sihd6n65e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD6N80AE-GE3 sihd6n80ae.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 62.5W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD6N80E-GE3 sihd6n80e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; Idm: 15A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Pulsed drain current: 15A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD7N60E-GE3 sihd7n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHD9N60E-GE3 sihd9n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 22A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 22A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 368mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF065N60E-GE3 sihf065n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 116A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF068N60EF-GE3 sihf068n60ef.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 115A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 115A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHF10N40D-E3 sihf10n40d.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 23A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF12N60E-GE3 sihf12n6.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF12N65E-GE3 sihf12n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF15N60E-GE3 sihf15n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF15N65E-GE3 sihf15n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF18N50D-E3 sihf18n50d.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 53A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF22N60E-GE3 sihf22n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF22N65E-GE3 sihf22n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 56A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF23N60E-GE3 sihf23n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 63A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 63A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 158mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF28N60EF-GE3 sihf28n60ef.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF30N60E-GE3 sihf30n60e.pdf
SIHF30N60E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 676A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF35N60EF-GE3 sihf35n60ef.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF530S-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF530STRL-GE3 sihf530s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF530STRR-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF540S-GE3 sihf540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 100V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF5N50D-E3 sihf5n50d.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 28.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 28.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF610S-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.1A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.1A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHF620S-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W
Case: D2PAK; TO263
Mounting: SMD
Pulsed drain current: 18A
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.8Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF620STRL-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W
Case: D2PAK; TO263
Mounting: SMD
Pulsed drain current: 18A
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.8Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF634STRR-GE3
Hersteller: VISHAY
SIHF634STRR-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF640L-GE3
Hersteller: VISHAY
SIHF640L-GE3 THT N channel transistors
Produkt ist nicht verfügbar
SIHF640S-GE3 sihf640s.pdf
Hersteller: VISHAY
SIHF640S-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF644S-GE3
Hersteller: VISHAY
SIHF644S-GE3 SMD N channel transistors
auf Bestellung 994 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
69+ 1.04 EUR
73+ 0.99 EUR
Mindestbestellmenge: 45
SIHF644STRL-GE3
Hersteller: VISHAY
SIHF644STRL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF6N40D-E3 sihf6n40d.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 4A; Idm: 13A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 4A
Pulsed drain current: 13A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF6N65E-GE3 sihf6n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF730STRL-GE3
Hersteller: VISHAY
SIHF730STRL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF740AL-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF740STRL-GE3
Hersteller: VISHAY
SIHF740STRL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF7N60E-E3 sihf7n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF830STRL-GE3
Hersteller: VISHAY
SIHF830STRL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIHF840AS-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF840S-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHF8N50D-E3 sihfp8n50d.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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