Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI7858ADP-T1-GE3 | VISHAY | SI7858ADP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7858BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 40A; Idm: 70A; 48W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 12V Drain current: 40A Pulsed drain current: 70A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±8V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7862ADP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W Drain-source voltage: 16V Drain current: 29A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD Case: PowerPAK® SO8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7862ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W Drain-source voltage: 16V Drain current: 29A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD Case: PowerPAK® SO8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7868ADP-T1-E3 | VISHAY | SI7868ADP-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7880ADP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 70A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7880ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 70A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7884BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 58A; Idm: 50A; 46W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 58A Pulsed drain current: 50A Power dissipation: 46W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7892BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 60A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Pulsed drain current: 60A Power dissipation: 5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7898DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 4.8A; Idm: 25A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 4.8A Pulsed drain current: 25A Power dissipation: 5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7898DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 3A; Idm: 25A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 3A Pulsed drain current: 25A Power dissipation: 1.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7900AEDN-T1-E3 | VISHAY | SI7900AEDN-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7900AEDN-T1-GE3 | VISHAY | SI7900AEDN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7904BDN-T1-E3 | VISHAY | SI7904BDN-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7904BDN-T1-GE3 | VISHAY | SI7904BDN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7913DN-T1-E3 | VISHAY | SI7913DN-T1-E3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SI7913DN-T1-GE3 | VISHAY | SI7913DN-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SI7922DN-T1-E3 | VISHAY | SI7922DN-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7922DN-T1-GE3 | VISHAY | SI7922DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7923DN-T1-E3 | VISHAY | SI7923DN-T1-E3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SI7923DN-T1-GE3 | VISHAY | SI7923DN-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SI7938DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 60A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 80A Power dissipation: 46W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI7942DP-T1-E3 | VISHAY | SI7942DP-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7942DP-T1-GE3 | VISHAY | SI7942DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7946ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 150V; 7.7A; Idm: 10A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 7.7A Pulsed drain current: 10A Power dissipation: 19.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 256mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7949DP-T1-E3 | VISHAY | SI7949DP-T1-E3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SI7949DP-T1-GE3 | VISHAY | SI7949DP-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI7956DP-T1-E3 | VISHAY | SI7956DP-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7956DP-T1-GE3 | VISHAY | SI7956DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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Si7972DP-T1-GE3 | VISHAY | SI7972DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7994DP-T1-GE3 | VISHAY | SI7994DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7997DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -60A; 46W Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -60A Pulsed drain current: -100A Power dissipation: 46W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI7998DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8401DB-T1-E1 | VISHAY | SI8401DB-T1-E1 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI8401DB-T1-E3 | VISHAY | SI8401DB-T1-E3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI8406DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 30A; 13W Pulsed drain current: 30A Power dissipation: 13W Gate charge: 20nC Polarisation: unipolar Technology: TrenchFET® Drain current: 16A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 42mΩ Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8409DB-T1-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.3A; Idm: -25A Mounting: SMD Technology: TrenchFET® Drain current: -6.3A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: MICROFOOT® 1.6x1.6 On-state resistance: 65mΩ Pulsed drain current: -25A Power dissipation: 2.77W Gate charge: 26nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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Si8410DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.7A; Idm: 20A Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8413DB-T1-E1 | VISHAY | SI8413DB-T1-E1 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI8416DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W Mounting: SMD Kind of package: reel; tape Power dissipation: 13W Polarisation: unipolar Gate charge: 26nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 20A Drain-source voltage: 8V Drain current: 16A On-state resistance: 95mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8424CDB-T1-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 10A; Idm: 25A; 1.8W Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 25A Drain-source voltage: 8V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI8425DB-T1-E1 | VISHAY | SI8425DB-T1-E1 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI8429DB-T1-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -11.7A; Idm: -25A Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Power dissipation: 6.25W Polarisation: unipolar Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -25A Drain-source voltage: -8V Drain current: -11.7A On-state resistance: 98mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8457DB-T1-E1 | VISHAY | SI8457DB-T1-E1 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI8466EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 13nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 20A Drain-source voltage: 8V Drain current: 5.4A On-state resistance: 90mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8472DB-T2-E1 | VISHAY | SI8472DB-T2-E1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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Si8481DB-T1-E1 | VISHAY | SI8481DB-T1-E1 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI8483DB-T2-E1 | VISHAY | SI8483DB-T2-E1 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI8487DB-T1-E1 | VISHAY | SI8487DB-T1-E1 SMD P channel transistors |
auf Bestellung 2885 Stücke: Lieferzeit 7-14 Tag (e) |
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SI8489EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -5.4A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 82mΩ Pulsed drain current: -20A Power dissipation: 1.8W Gate charge: 27nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8497DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -13A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.12Ω Pulsed drain current: -20A Power dissipation: 13W Gate charge: 49nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8499DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -16A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.12Ω Pulsed drain current: -20A Power dissipation: 13W Gate charge: 30nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8800EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.8A; Idm: 15A Mounting: SMD Pulsed drain current: 15A Power dissipation: 0.9W Gate charge: 8.3nC Polarisation: unipolar Technology: TrenchFET® Drain current: 2.8A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.15Ω Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8802DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A Mounting: SMD Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Gate charge: 6.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 15A Drain-source voltage: 8V Drain current: 3.5A On-state resistance: 135mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8806DB-T2-E1 | VISHAY | SI8806DB-T2-E1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI8808DB-T2-E1 | VISHAY | SI8808DB-T2-E1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI8810EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.9A Pulsed drain current: 15A Power dissipation: 0.9W Gate-source voltage: ±8V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8812DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A Kind of package: reel; tape Pulsed drain current: 20A Power dissipation: 0.9W Gate charge: 17nC Polarisation: unipolar Technology: TrenchFET® Drain current: 3.2A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 93mΩ Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8816EDB-T2-E1 | VISHAY | SI8816EDB-T2-E1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI8817DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Power dissipation: 0.9W On-state resistance: 0.32Ω Polarisation: unipolar Technology: TrenchFET® Pulsed drain current: -15A Gate charge: 19nC Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -20V Gate-source voltage: ±8V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
SI7858ADP-T1-GE3 |
Hersteller: VISHAY
SI7858ADP-T1-GE3 SMD N channel transistors
SI7858ADP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7858BDP-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7862ADP-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Case: PowerPAK® SO8
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Case: PowerPAK® SO8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7862ADP-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Case: PowerPAK® SO8
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Case: PowerPAK® SO8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7868ADP-T1-E3 |
Hersteller: VISHAY
SI7868ADP-T1-E3 SMD N channel transistors
SI7868ADP-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7880ADP-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7880ADP-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7884BDP-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 58A; Idm: 50A; 46W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Pulsed drain current: 50A
Power dissipation: 46W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 58A; Idm: 50A; 46W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Pulsed drain current: 50A
Power dissipation: 46W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7892BDP-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 60A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 60A
Power dissipation: 5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 60A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 60A
Power dissipation: 5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7898DP-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 4.8A; Idm: 25A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4.8A
Pulsed drain current: 25A
Power dissipation: 5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 4.8A; Idm: 25A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4.8A
Pulsed drain current: 25A
Power dissipation: 5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7898DP-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7900AEDN-T1-E3 |
Hersteller: VISHAY
SI7900AEDN-T1-E3 SMD N channel transistors
SI7900AEDN-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7900AEDN-T1-GE3 |
Hersteller: VISHAY
SI7900AEDN-T1-GE3 SMD N channel transistors
SI7900AEDN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7904BDN-T1-E3 |
Hersteller: VISHAY
SI7904BDN-T1-E3 SMD N channel transistors
SI7904BDN-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7904BDN-T1-GE3 |
Hersteller: VISHAY
SI7904BDN-T1-GE3 SMD N channel transistors
SI7904BDN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7913DN-T1-E3 |
Hersteller: VISHAY
SI7913DN-T1-E3 Multi channel transistors
SI7913DN-T1-E3 Multi channel transistors
Produkt ist nicht verfügbar
SI7913DN-T1-GE3 |
Hersteller: VISHAY
SI7913DN-T1-GE3 Multi channel transistors
SI7913DN-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SI7922DN-T1-E3 |
Hersteller: VISHAY
SI7922DN-T1-E3 SMD N channel transistors
SI7922DN-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7922DN-T1-GE3 |
Hersteller: VISHAY
SI7922DN-T1-GE3 SMD N channel transistors
SI7922DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7923DN-T1-E3 |
Hersteller: VISHAY
SI7923DN-T1-E3 Multi channel transistors
SI7923DN-T1-E3 Multi channel transistors
Produkt ist nicht verfügbar
SI7923DN-T1-GE3 |
Hersteller: VISHAY
SI7923DN-T1-GE3 Multi channel transistors
SI7923DN-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SI7938DP-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 60A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 46W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 60A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 46W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI7942DP-T1-E3 |
Hersteller: VISHAY
SI7942DP-T1-E3 SMD N channel transistors
SI7942DP-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7942DP-T1-GE3 |
Hersteller: VISHAY
SI7942DP-T1-GE3 SMD N channel transistors
SI7942DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7946ADP-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 150V; 7.7A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 19.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 150V; 7.7A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 19.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7949DP-T1-E3 |
Hersteller: VISHAY
SI7949DP-T1-E3 Multi channel transistors
SI7949DP-T1-E3 Multi channel transistors
Produkt ist nicht verfügbar
SI7949DP-T1-GE3 |
Hersteller: VISHAY
SI7949DP-T1-GE3 SMD P channel transistors
SI7949DP-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI7956DP-T1-E3 |
Hersteller: VISHAY
SI7956DP-T1-E3 SMD N channel transistors
SI7956DP-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7956DP-T1-GE3 |
Hersteller: VISHAY
SI7956DP-T1-GE3 SMD N channel transistors
SI7956DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Si7972DP-T1-GE3 |
Hersteller: VISHAY
SI7972DP-T1-GE3 SMD N channel transistors
SI7972DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7994DP-T1-GE3 |
Hersteller: VISHAY
SI7994DP-T1-GE3 SMD N channel transistors
SI7994DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7997DP-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -60A; 46W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 46W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -60A; 46W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 46W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI7998DP-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8401DB-T1-E1 |
Hersteller: VISHAY
SI8401DB-T1-E1 SMD P channel transistors
SI8401DB-T1-E1 SMD P channel transistors
Produkt ist nicht verfügbar
SI8401DB-T1-E3 |
Hersteller: VISHAY
SI8401DB-T1-E3 SMD P channel transistors
SI8401DB-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI8406DB-T2-E1 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 30A; 13W
Pulsed drain current: 30A
Power dissipation: 13W
Gate charge: 20nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 42mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 30A; 13W
Pulsed drain current: 30A
Power dissipation: 13W
Gate charge: 20nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 42mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8409DB-T1-E1 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.3A; Idm: -25A
Mounting: SMD
Technology: TrenchFET®
Drain current: -6.3A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MICROFOOT® 1.6x1.6
On-state resistance: 65mΩ
Pulsed drain current: -25A
Power dissipation: 2.77W
Gate charge: 26nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.3A; Idm: -25A
Mounting: SMD
Technology: TrenchFET®
Drain current: -6.3A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MICROFOOT® 1.6x1.6
On-state resistance: 65mΩ
Pulsed drain current: -25A
Power dissipation: 2.77W
Gate charge: 26nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si8410DB-T2-E1 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.7A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.7A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8413DB-T1-E1 |
Hersteller: VISHAY
SI8413DB-T1-E1 SMD P channel transistors
SI8413DB-T1-E1 SMD P channel transistors
Produkt ist nicht verfügbar
SI8416DB-T2-E1 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 13W
Polarisation: unipolar
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 20A
Drain-source voltage: 8V
Drain current: 16A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 13W
Polarisation: unipolar
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 20A
Drain-source voltage: 8V
Drain current: 16A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8424CDB-T1-E1 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 10A; Idm: 25A; 1.8W
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 25A
Drain-source voltage: 8V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 10A; Idm: 25A; 1.8W
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 25A
Drain-source voltage: 8V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI8425DB-T1-E1 |
Hersteller: VISHAY
SI8425DB-T1-E1 SMD P channel transistors
SI8425DB-T1-E1 SMD P channel transistors
Produkt ist nicht verfügbar
SI8429DB-T1-E1 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -11.7A; Idm: -25A
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Power dissipation: 6.25W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -25A
Drain-source voltage: -8V
Drain current: -11.7A
On-state resistance: 98mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -11.7A; Idm: -25A
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Power dissipation: 6.25W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -25A
Drain-source voltage: -8V
Drain current: -11.7A
On-state resistance: 98mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8457DB-T1-E1 |
Hersteller: VISHAY
SI8457DB-T1-E1 SMD P channel transistors
SI8457DB-T1-E1 SMD P channel transistors
Produkt ist nicht verfügbar
SI8466EDB-T2-E1 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 20A
Drain-source voltage: 8V
Drain current: 5.4A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 20A
Drain-source voltage: 8V
Drain current: 5.4A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8472DB-T2-E1 |
Hersteller: VISHAY
SI8472DB-T2-E1 SMD N channel transistors
SI8472DB-T2-E1 SMD N channel transistors
Produkt ist nicht verfügbar
Si8481DB-T1-E1 |
Hersteller: VISHAY
SI8481DB-T1-E1 SMD P channel transistors
SI8481DB-T1-E1 SMD P channel transistors
Produkt ist nicht verfügbar
SI8483DB-T2-E1 |
Hersteller: VISHAY
SI8483DB-T2-E1 SMD P channel transistors
SI8483DB-T2-E1 SMD P channel transistors
Produkt ist nicht verfügbar
SI8487DB-T1-E1 |
Hersteller: VISHAY
SI8487DB-T1-E1 SMD P channel transistors
SI8487DB-T1-E1 SMD P channel transistors
auf Bestellung 2885 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
66+ | 1.09 EUR |
216+ | 0.33 EUR |
228+ | 0.31 EUR |
SI8489EDB-T2-E1 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -5.4A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 82mΩ
Pulsed drain current: -20A
Power dissipation: 1.8W
Gate charge: 27nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -5.4A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 82mΩ
Pulsed drain current: -20A
Power dissipation: 1.8W
Gate charge: 27nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8497DB-T2-E1 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -13A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 49nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -13A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 49nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8499DB-T2-E1 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 30nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 30nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8800EDB-T2-E1 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.8A; Idm: 15A
Mounting: SMD
Pulsed drain current: 15A
Power dissipation: 0.9W
Gate charge: 8.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 2.8A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.15Ω
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.8A; Idm: 15A
Mounting: SMD
Pulsed drain current: 15A
Power dissipation: 0.9W
Gate charge: 8.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 2.8A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.15Ω
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8802DB-T2-E1 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 6.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Drain-source voltage: 8V
Drain current: 3.5A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 6.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Drain-source voltage: 8V
Drain current: 3.5A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8806DB-T2-E1 |
Hersteller: VISHAY
SI8806DB-T2-E1 SMD N channel transistors
SI8806DB-T2-E1 SMD N channel transistors
Produkt ist nicht verfügbar
SI8808DB-T2-E1 |
Hersteller: VISHAY
SI8808DB-T2-E1 SMD N channel transistors
SI8808DB-T2-E1 SMD N channel transistors
Produkt ist nicht verfügbar
SI8810EDB-T2-E1 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 0.9W
Gate-source voltage: ±8V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 0.9W
Gate-source voltage: ±8V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8812DB-T2-E1 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 93mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 93mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8816EDB-T2-E1 |
Hersteller: VISHAY
SI8816EDB-T2-E1 SMD N channel transistors
SI8816EDB-T2-E1 SMD N channel transistors
Produkt ist nicht verfügbar
SI8817DB-T2-E1 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar