| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SIHFPS40N50L-GE3 | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 29A; Idm: 180A; 540W; SUPER247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 29A Pulsed drain current: 180A Power dissipation: 540W Case: SUPER247 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 380nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR010-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252 Mounting: SMD Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 33A Case: DPAK; TO252 Drain-source voltage: 50V Drain current: 8.2A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR014TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Drain-source voltage: 60V Drain current: 4.9A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A Mounting: SMD Case: DPAK; TO252 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR024-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR110-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Case: DPAK; TO252 Mounting: SMD Power dissipation: 25W Pulsed drain current: 17A Gate charge: 8.3nC Polarisation: unipolar Drain current: 2.7A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.54Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR110TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Case: DPAK; TO252 Mounting: SMD Power dissipation: 25W Pulsed drain current: 17A Gate charge: 8.3nC Polarisation: unipolar Drain current: 2.7A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.54Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR110TRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Case: DPAK; TO252 Mounting: SMD Power dissipation: 25W Pulsed drain current: 17A Gate charge: 8.3nC Polarisation: unipolar Drain current: 2.7A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.54Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR120-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.27Ω Drain current: 4.9A Gate charge: 16nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR120TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.27Ω Drain current: 4.9A Gate charge: 16nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR120TRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.27Ω Drain current: 4.9A Gate charge: 16nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHFR1N60A-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.98A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIHFR1N60ATRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Pulsed drain current: 5.6A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR210TRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 1.7A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHFR220-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3A Pulsed drain current: 19A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR220TRL-GE3 | VISHAY | SIHFR220TRL-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIHFR310-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.1A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR310TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.1A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR320-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2A Pulsed drain current: 12A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR320TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2A Pulsed drain current: 12A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR420-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHFR420A-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W Mounting: SMD Case: DPAK; TO252 Power dissipation: 83W Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 10A On-state resistance: 3Ω Type of transistor: N-MOSFET Drain current: 2.1A Drain-source voltage: 500V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR420ATR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W Mounting: SMD Case: DPAK; TO252 Power dissipation: 83W Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 10A On-state resistance: 3Ω Type of transistor: N-MOSFET Drain current: 2.1A Drain-source voltage: 500V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR420TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHFR420TRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHFR430A-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.2A Pulsed drain current: 20A Power dissipation: 110W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR430ATR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.2A Pulsed drain current: 20A Power dissipation: 110W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9014-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Pulsed drain current: -20A Power dissipation: 25W Gate charge: 12nC Polarisation: unipolar Drain current: -3.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.5Ω Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9014TR-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Pulsed drain current: -20A Power dissipation: 25W Gate charge: 12nC Polarisation: unipolar Drain current: -3.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.5Ω Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9014TRL-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Pulsed drain current: -20A Power dissipation: 25W Gate charge: 12nC Polarisation: unipolar Drain current: -3.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.5Ω Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9020TR-GE3 | VISHAY | SIHFR9020TR-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SIHFR9024-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9024TR-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9110TR-GE3 | VISHAY | SIHFR9110TR-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SIHFR9110TRL-GE3 | VISHAY | SIHFR9110TRL-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SIHFR9120-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.6A Pulsed drain current: -22A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9120TR-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.6A Pulsed drain current: -22A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9210TR-GE3 | VISHAY | SIHFR9210TR-GE3 SMD P channel transistors |
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| SIHFR9214-GE3 | VISHAY | SIHFR9214-GE3 SMD P channel transistors |
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| SIHFR9214TR-GE3 | VISHAY | SIHFR9214TR-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SIHFR9220-GE3 | VISHAY |
SIHFR9220-GE3 SMD P channel transistors |
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| SIHFR9220TR-GE3 | VISHAY | SIHFR9220TR-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SIHFR9220TRL-GE3 | VISHAY | SIHFR9220TRL-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SIHFR9220TRR-GE3 | VISHAY | SIHFR9220TRR-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SIHFR9310-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9310TR-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9310TRL-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFRC20-GE3 | VISHAY | SIHFRC20-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIHFRC20TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHFS9N60A-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; Idm: 37A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.8A Pulsed drain current: 37A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFU020-GE3 | VISHAY | SIHFU020-GE3 THT N channel transistors |
Produkt ist nicht verfügbar |
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| SIHFU024-GE3 | VISHAY | SIHFU024-GE3 THT N channel transistors |
Produkt ist nicht verfügbar |
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| SIHFU310-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; IPAK,TO251 Mounting: THT Case: IPAK; TO251 Kind of package: tube Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A Drain-source voltage: 400V Drain current: 1.1A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFU9020-GE3 | VISHAY | SIHFU9020-GE3 THT P channel transistors |
Produkt ist nicht verfügbar |
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| SIHFU9310-GE3 | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFUC20-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFZ34S-GE3 | VISHAY | SIHFZ34S-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIHFZ48RS-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 190W Drain-source voltage: 60V Drain current: 50A On-state resistance: 18mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 110nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 290A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFZ48S-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 190W Drain-source voltage: 60V Drain current: 50A On-state resistance: 18mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 110nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 290A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHG018N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 63A; Idm: 325A; 524W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 63A Pulsed drain current: 325A Power dissipation: 524W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHG039N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Pulsed drain current: 199A Power dissipation: 357W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| SIHFPS40N50L-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 29A; Idm: 180A; 540W; SUPER247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 29A
Pulsed drain current: 180A
Power dissipation: 540W
Case: SUPER247
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 29A; Idm: 180A; 540W; SUPER247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 29A
Pulsed drain current: 180A
Power dissipation: 540W
Case: SUPER247
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR010-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 33A
Case: DPAK; TO252
Drain-source voltage: 50V
Drain current: 8.2A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 33A
Case: DPAK; TO252
Drain-source voltage: 50V
Drain current: 8.2A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR014TR-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR024-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR110-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR110TR-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR110TRL-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR120-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR120TR-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR120TRL-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR1N60A-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.98A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.98A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.2 EUR |
| 66+ | 1.09 EUR |
| 75+ | 0.96 EUR |
| 89+ | 0.8 EUR |
| SIHFR1N60ATRL-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR210TRL-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR220-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIHFR220TRL-GE3 |
Hersteller: VISHAY
SIHFR220TRL-GE3 SMD N channel transistors
SIHFR220TRL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIHFR310-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR310TR-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR320-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR320TR-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR420-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHFR420A-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR420ATR-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR420TR-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHFR420TRL-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHFR430A-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR430ATR-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9014-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9014TR-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9014TRL-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9020TR-GE3 |
Hersteller: VISHAY
SIHFR9020TR-GE3 SMD P channel transistors
SIHFR9020TR-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SIHFR9024-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9024TR-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9110TR-GE3 |
Hersteller: VISHAY
SIHFR9110TR-GE3 SMD P channel transistors
SIHFR9110TR-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SIHFR9110TRL-GE3 |
Hersteller: VISHAY
SIHFR9110TRL-GE3 SMD P channel transistors
SIHFR9110TRL-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SIHFR9120-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9120TR-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9210TR-GE3 |
Hersteller: VISHAY
SIHFR9210TR-GE3 SMD P channel transistors
SIHFR9210TR-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SIHFR9214TR-GE3 |
Hersteller: VISHAY
SIHFR9214TR-GE3 SMD P channel transistors
SIHFR9214TR-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SIHFR9220TR-GE3 |
Hersteller: VISHAY
SIHFR9220TR-GE3 SMD P channel transistors
SIHFR9220TR-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SIHFR9220TRL-GE3 |
Hersteller: VISHAY
SIHFR9220TRL-GE3 SMD P channel transistors
SIHFR9220TRL-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SIHFR9220TRR-GE3 |
Hersteller: VISHAY
SIHFR9220TRR-GE3 SMD P channel transistors
SIHFR9220TRR-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SIHFR9310-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9310TR-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFR9310TRL-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFRC20TR-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHFS9N60A-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFU310-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; IPAK,TO251
Mounting: THT
Case: IPAK; TO251
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; IPAK,TO251
Mounting: THT
Case: IPAK; TO251
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFU9310-GE3 |
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFUC20-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFZ48RS-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHFZ48S-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHG018N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 63A; Idm: 325A; 524W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 63A
Pulsed drain current: 325A
Power dissipation: 524W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 63A; Idm: 325A; 524W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 63A
Pulsed drain current: 325A
Power dissipation: 524W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIHG039N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 199A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 199A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar