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SI2316BDS-T1-E3 VISHAY si2316bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316BDS-T1-GE3 VISHAY si2316bd.pdf Category: SMD P channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.66W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316DS-T1-E3 SI2316DS-T1-E3 VISHAY si2316ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.45W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
132+ 0.54 EUR
151+ 0.47 EUR
174+ 0.41 EUR
184+ 0.39 EUR
Mindestbestellmenge: 76
SI2316DS-T1-GE3 VISHAY si2316ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 16A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 VISHAY si2318cds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1713 Stücke:
Lieferzeit 7-14 Tag (e)
206+0.35 EUR
293+ 0.24 EUR
378+ 0.19 EUR
399+ 0.18 EUR
Mindestbestellmenge: 206
SI2318DS-T1-E3 SI2318DS-T1-E3 VISHAY SI2318DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 0.75W
Polarisation: unipolar
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Drain-source voltage: 40V
Drain current: 3A
On-state resistance: 58mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2318DS-T1-GE3 SI2318DS-T1-GE3 VISHAY SI2318DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)
171+0.42 EUR
190+ 0.38 EUR
248+ 0.29 EUR
262+ 0.27 EUR
Mindestbestellmenge: 171
SI2319CDS-T1-BE3 VISHAY si2319cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.4A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 VISHAY si2319cds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10646 Stücke:
Lieferzeit 7-14 Tag (e)
135+0.53 EUR
167+ 0.43 EUR
216+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 135
SI2319DDS-T1-GE3 SI2319DDS-T1-GE3 VISHAY si2319dds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2640 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
162+ 0.44 EUR
194+ 0.37 EUR
214+ 0.33 EUR
280+ 0.26 EUR
296+ 0.24 EUR
Mindestbestellmenge: 132
SI2319DS-T1-E3 SI2319DS-T1-E3 VISHAY si2319ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4062 Stücke:
Lieferzeit 7-14 Tag (e)
57+1.26 EUR
98+ 0.74 EUR
108+ 0.66 EUR
141+ 0.51 EUR
150+ 0.48 EUR
Mindestbestellmenge: 57
SI2319DS-T1-GE3 SI2319DS-T1-GE3 VISHAY si2319ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2998 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
96+ 0.75 EUR
123+ 0.58 EUR
161+ 0.45 EUR
170+ 0.42 EUR
3000+ 0.41 EUR
Mindestbestellmenge: 81
SI2323CDS-T1-BE3 VISHAY si2323cds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2323CDS-T1-GE3 SI2323CDS-T1-GE3 VISHAY si2323cds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2323DDS-T1-GE3 SI2323DDS-T1-GE3 VISHAY SI2323DDS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
159+ 0.45 EUR
218+ 0.33 EUR
231+ 0.31 EUR
Mindestbestellmenge: 143
SI2323DS-T1-E3 SI2323DS-T1-E3 VISHAY SI2323DS-T1-E3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3985 Stücke:
Lieferzeit 7-14 Tag (e)
90+0.8 EUR
104+ 0.69 EUR
125+ 0.57 EUR
132+ 0.54 EUR
Mindestbestellmenge: 90
SI2323DS-T1-GE3 SI2323DS-T1-GE3 VISHAY SI2323DS-T1-E3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2050 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
76+ 0.95 EUR
85+ 0.85 EUR
153+ 0.47 EUR
162+ 0.44 EUR
Mindestbestellmenge: 59
SI2324DS-T1-GE3 SI2324DS-T1-GE3 VISHAY si2324ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 234mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11594 Stücke:
Lieferzeit 7-14 Tag (e)
158+0.45 EUR
177+ 0.41 EUR
226+ 0.32 EUR
239+ 0.3 EUR
3000+ 0.29 EUR
Mindestbestellmenge: 158
Si2325DS-T1-E3 Si2325DS-T1-E3 VISHAY 73238.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.53A; Idm: -1.6A; 0.48W
Case: SOT23
Mounting: SMD
On-state resistance: 1.2Ω
Kind of package: reel; tape
Power dissipation: 0.48W
Drain current: -530mA
Drain-source voltage: -150V
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1.6A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2325DS-T1-GE3 SI2325DS-T1-GE3 VISHAY SI2325DS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.43A; 0.48W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 1.3Ω
Kind of package: reel; tape
Power dissipation: 0.48W
Drain current: -0.43A
Drain-source voltage: -150V
Polarisation: unipolar
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2328DS-T1-E3 VISHAY si2328ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.5A; Idm: 6A
Kind of package: reel; tape
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2328DS-T1-GE3 SI2328DS-T1-GE3 VISHAY si2328ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.92A; 0.47W; SOT23
Kind of package: reel; tape
Drain current: 0.92A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.47W
Polarisation: unipolar
Gate charge: 3.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 717 Stücke:
Lieferzeit 7-14 Tag (e)
166+0.43 EUR
182+ 0.39 EUR
239+ 0.3 EUR
264+ 0.27 EUR
Mindestbestellmenge: 166
SI2329DS-T1-GE3 SI2329DS-T1-GE3 VISHAY SI2329DS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Kind of package: reel; tape
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2333CDS-T1-E3 SI2333CDS-T1-E3 VISHAY si2333cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2933 Stücke:
Lieferzeit 7-14 Tag (e)
88+0.82 EUR
100+ 0.72 EUR
124+ 0.58 EUR
180+ 0.4 EUR
191+ 0.38 EUR
1000+ 0.37 EUR
3000+ 0.36 EUR
Mindestbestellmenge: 88
SI2333CDS-T1-GE3 SI2333CDS-T1-GE3 VISHAY si2333cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2191 Stücke:
Lieferzeit 7-14 Tag (e)
105+0.69 EUR
120+ 0.6 EUR
136+ 0.53 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 105
SI2333DDS-T1-GE3 SI2333DDS-T1-GE3 VISHAY si2333dds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Pulsed drain current: -20A
Power dissipation: 1.1W
Gate charge: 35nC
Drain current: -5.2A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.15Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1648 Stücke:
Lieferzeit 7-14 Tag (e)
188+0.38 EUR
221+ 0.32 EUR
304+ 0.24 EUR
321+ 0.22 EUR
Mindestbestellmenge: 188
SI2333DS-T1-E3 VISHAY si2333ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Pulsed drain current: -20A
Power dissipation: 1.25W
Gate charge: 18nC
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 59mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2333DS-T1-GE3 VISHAY 72023.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Pulsed drain current: -20A
Power dissipation: 1.25W
Gate charge: 18nC
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 59mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2334DS-T1-GE3 SI2334DS-T1-GE3 VISHAY si2334ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.9A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.9A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2336DS-T1-GE3 SI2336DS-T1-GE3 VISHAY si2336ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2625 Stücke:
Lieferzeit 7-14 Tag (e)
221+0.32 EUR
358+ 0.2 EUR
404+ 0.18 EUR
466+ 0.15 EUR
Mindestbestellmenge: 221
SI2337DS-T1-E3 SI2337DS-T1-E3 VISHAY si2337ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -2.2A; Idm: -7A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.2A
Pulsed drain current: -7A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2337DS-T1-GE3 SI2337DS-T1-GE3 VISHAY SI2337DS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -1.75A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4717 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
104+ 0.69 EUR
117+ 0.61 EUR
132+ 0.54 EUR
139+ 0.51 EUR
Mindestbestellmenge: 70
SI2338DS-T1-BE3 VISHAY SI2338DS-T1-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2338DS-T1-GE3 VISHAY si2338ds.pdf SI2338DS-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2342DS-T1-GE3 SI2342DS-T1-GE3 VISHAY si2342ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 30A
Power dissipation: 1.6W
Drain-source voltage: 8V
Drain current: 6A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2951 Stücke:
Lieferzeit 7-14 Tag (e)
122+0.59 EUR
147+ 0.49 EUR
165+ 0.43 EUR
285+ 0.25 EUR
302+ 0.24 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 122
SI2343CDS-T1-GE3 SI2343CDS-T1-GE3 VISHAY si2343cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
107+0.67 EUR
121+ 0.59 EUR
151+ 0.47 EUR
291+ 0.25 EUR
309+ 0.23 EUR
Mindestbestellmenge: 107
SI2343DS-T1-E3 VISHAY si2343ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2343DS-T1-GE3 VISHAY si2343ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2347DS-T1-GE3 SI2347DS-T1-GE3 VISHAY si2347ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3035 Stücke:
Lieferzeit 7-14 Tag (e)
315+0.23 EUR
350+ 0.21 EUR
395+ 0.18 EUR
455+ 0.16 EUR
485+ 0.15 EUR
Mindestbestellmenge: 315
SI2356DS-T1-BE3 VISHAY si2356ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Kind of package: reel; tape
Technology: TrenchFET®
Mounting: SMD
Drain-source voltage: 40V
Drain current: 4.3A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2356DS-T1-GE3 SI2356DS-T1-GE3 VISHAY si2356ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Kind of package: reel; tape
Technology: TrenchFET®
Mounting: SMD
Drain-source voltage: 40V
Drain current: 4.3A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5968 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
209+ 0.34 EUR
261+ 0.27 EUR
371+ 0.19 EUR
486+ 0.15 EUR
516+ 0.14 EUR
3000+ 0.13 EUR
Mindestbestellmenge: 152
SI2365EDS-T1-BE3 VISHAY si2365eds.pdf SI2365EDS-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 VISHAY si2365eds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI2366DS-T1-BE3 VISHAY SI2366DS-T1-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2366DS-T1-GE3 VISHAY si2366ds.pdf SI2366DS-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2367DS-T1-GE3
+1
 		SI2367DS-T1-GE3 VISHAY SI2367DS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 66mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369BDS-T1-GE3 VISHAY si2369bds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369DS-T1-GE3 SI2369DS-T1-GE3 VISHAY si2369d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Drain-source voltage: -30V
Drain current: -7.6A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1908 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
186+ 0.38 EUR
224+ 0.32 EUR
291+ 0.25 EUR
307+ 0.23 EUR
3000+ 0.22 EUR
Mindestbestellmenge: 152
SI2371EDS-T1-GE3 SI2371EDS-T1-GE3 VISHAY si2371eds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-BE3 VISHAY si2374ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-GE3 SI2374DS-T1-GE3 VISHAY si2374ds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.7A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.7A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2720 Stücke:
Lieferzeit 7-14 Tag (e)
215+0.33 EUR
338+ 0.21 EUR
414+ 0.17 EUR
439+ 0.16 EUR
Mindestbestellmenge: 215
SI2377EDS-T1-GE3 SI2377EDS-T1-GE3 VISHAY SI2377EDS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2891 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
224+ 0.32 EUR
292+ 0.25 EUR
308+ 0.23 EUR
Mindestbestellmenge: 200
SI2387DS-T1-GE3 VISHAY si2387ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 VISHAY si2392ads.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2392DS-T1-GE3 VISHAY Si2392DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 10.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2393DS-T1-GE3 VISHAY si2393ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2399DS-T1-GE3 SI2399DS-T1-GE3 VISHAY si2399ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -20A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3127DV-T1-GE3 SI3127DV-T1-GE3 VISHAY si3127dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: TSOP6
Drain-source voltage: -60V
Drain current: -5.1A
On-state resistance: 89mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3129DV-T1-GE3 VISHAY si3129dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -5.4A; Idm: -20A
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Drain-source voltage: -80V
Drain current: -5.4A
On-state resistance: 124.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 4.2W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3407DV-T1-BE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2316BDS-T1-E3 si2316bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316BDS-T1-GE3 si2316bd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 20A
Power dissipation: 1.66W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2316DS-T1-E3 si2316ds.pdf
SI2316DS-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.45W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
132+ 0.54 EUR
151+ 0.47 EUR
174+ 0.41 EUR
184+ 0.39 EUR
Mindestbestellmenge: 76
SI2316DS-T1-GE3 si2316ds.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 16A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2318CDS-T1-GE3 si2318cds.pdf
SI2318CDS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1713 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
206+0.35 EUR
293+ 0.24 EUR
378+ 0.19 EUR
399+ 0.18 EUR
Mindestbestellmenge: 206
SI2318DS-T1-E3 SI2318DS.pdf
SI2318DS-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 0.75W
Polarisation: unipolar
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Drain-source voltage: 40V
Drain current: 3A
On-state resistance: 58mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2318DS-T1-GE3 SI2318DS.pdf
SI2318DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
171+0.42 EUR
190+ 0.38 EUR
248+ 0.29 EUR
262+ 0.27 EUR
Mindestbestellmenge: 171
SI2319CDS-T1-BE3 si2319cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.4A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2319CDS-T1-GE3 si2319cds.pdf
SI2319CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10646 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
135+0.53 EUR
167+ 0.43 EUR
216+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 135
SI2319DDS-T1-GE3 si2319dds.pdf
SI2319DDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2640 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
162+ 0.44 EUR
194+ 0.37 EUR
214+ 0.33 EUR
280+ 0.26 EUR
296+ 0.24 EUR
Mindestbestellmenge: 132
SI2319DS-T1-E3 si2319ds.pdf
SI2319DS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4062 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
57+1.26 EUR
98+ 0.74 EUR
108+ 0.66 EUR
141+ 0.51 EUR
150+ 0.48 EUR
Mindestbestellmenge: 57
SI2319DS-T1-GE3 si2319ds.pdf
SI2319DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2998 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
96+ 0.75 EUR
123+ 0.58 EUR
161+ 0.45 EUR
170+ 0.42 EUR
3000+ 0.41 EUR
Mindestbestellmenge: 81
SI2323CDS-T1-BE3 si2323cds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2323CDS-T1-GE3 si2323cds.pdf
SI2323CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2323DDS-T1-GE3 SI2323DDS.pdf
SI2323DDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
159+ 0.45 EUR
218+ 0.33 EUR
231+ 0.31 EUR
Mindestbestellmenge: 143
SI2323DS-T1-E3 SI2323DS-T1-E3.pdf
SI2323DS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3985 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
90+0.8 EUR
104+ 0.69 EUR
125+ 0.57 EUR
132+ 0.54 EUR
Mindestbestellmenge: 90
SI2323DS-T1-GE3 SI2323DS-T1-E3.pdf
SI2323DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2050 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
76+ 0.95 EUR
85+ 0.85 EUR
153+ 0.47 EUR
162+ 0.44 EUR
Mindestbestellmenge: 59
SI2324DS-T1-GE3 si2324ds.pdf
SI2324DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 234mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11594 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
158+0.45 EUR
177+ 0.41 EUR
226+ 0.32 EUR
239+ 0.3 EUR
3000+ 0.29 EUR
Mindestbestellmenge: 158
Si2325DS-T1-E3 73238.pdf
Si2325DS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.53A; Idm: -1.6A; 0.48W
Case: SOT23
Mounting: SMD
On-state resistance: 1.2Ω
Kind of package: reel; tape
Power dissipation: 0.48W
Drain current: -530mA
Drain-source voltage: -150V
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1.6A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2325DS-T1-GE3 SI2325DS.pdf
SI2325DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.43A; 0.48W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 1.3Ω
Kind of package: reel; tape
Power dissipation: 0.48W
Drain current: -0.43A
Drain-source voltage: -150V
Polarisation: unipolar
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2328DS-T1-E3 si2328ds.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.5A; Idm: 6A
Kind of package: reel; tape
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2328DS-T1-GE3 si2328ds.pdf
SI2328DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.92A; 0.47W; SOT23
Kind of package: reel; tape
Drain current: 0.92A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.47W
Polarisation: unipolar
Gate charge: 3.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 717 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
166+0.43 EUR
182+ 0.39 EUR
239+ 0.3 EUR
264+ 0.27 EUR
Mindestbestellmenge: 166
SI2329DS-T1-GE3 SI2329DS.pdf
SI2329DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Kind of package: reel; tape
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2333CDS-T1-E3 si2333cd.pdf
SI2333CDS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2933 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
88+0.82 EUR
100+ 0.72 EUR
124+ 0.58 EUR
180+ 0.4 EUR
191+ 0.38 EUR
1000+ 0.37 EUR
3000+ 0.36 EUR
Mindestbestellmenge: 88
SI2333CDS-T1-GE3 si2333cd.pdf
SI2333CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2191 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
105+0.69 EUR
120+ 0.6 EUR
136+ 0.53 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 105
SI2333DDS-T1-GE3 si2333dds.pdf
SI2333DDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Pulsed drain current: -20A
Power dissipation: 1.1W
Gate charge: 35nC
Drain current: -5.2A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.15Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1648 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
188+0.38 EUR
221+ 0.32 EUR
304+ 0.24 EUR
321+ 0.22 EUR
Mindestbestellmenge: 188
SI2333DS-T1-E3 si2333ds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Pulsed drain current: -20A
Power dissipation: 1.25W
Gate charge: 18nC
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 59mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2333DS-T1-GE3 72023.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Pulsed drain current: -20A
Power dissipation: 1.25W
Gate charge: 18nC
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 59mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2334DS-T1-GE3 si2334ds.pdf
SI2334DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.9A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.9A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2336DS-T1-GE3 si2336ds.pdf
SI2336DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2625 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
221+0.32 EUR
358+ 0.2 EUR
404+ 0.18 EUR
466+ 0.15 EUR
Mindestbestellmenge: 221
SI2337DS-T1-E3 si2337ds.pdf
SI2337DS-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -2.2A; Idm: -7A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.2A
Pulsed drain current: -7A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2337DS-T1-GE3 SI2337DS.pdf
SI2337DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -1.75A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4717 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
104+ 0.69 EUR
117+ 0.61 EUR
132+ 0.54 EUR
139+ 0.51 EUR
Mindestbestellmenge: 70
SI2338DS-T1-BE3
Hersteller: VISHAY
SI2338DS-T1-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2338DS-T1-GE3 si2338ds.pdf
Hersteller: VISHAY
SI2338DS-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2342DS-T1-GE3 si2342ds.pdf
SI2342DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 30A
Power dissipation: 1.6W
Drain-source voltage: 8V
Drain current: 6A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2951 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
122+0.59 EUR
147+ 0.49 EUR
165+ 0.43 EUR
285+ 0.25 EUR
302+ 0.24 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 122
SI2343CDS-T1-GE3 si2343cd.pdf
SI2343CDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
107+0.67 EUR
121+ 0.59 EUR
151+ 0.47 EUR
291+ 0.25 EUR
309+ 0.23 EUR
Mindestbestellmenge: 107
SI2343DS-T1-E3 si2343ds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2343DS-T1-GE3 si2343ds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2347DS-T1-GE3 si2347ds.pdf
SI2347DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3035 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
350+ 0.21 EUR
395+ 0.18 EUR
455+ 0.16 EUR
485+ 0.15 EUR
Mindestbestellmenge: 315
SI2356DS-T1-BE3 si2356ds.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Kind of package: reel; tape
Technology: TrenchFET®
Mounting: SMD
Drain-source voltage: 40V
Drain current: 4.3A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2356DS-T1-GE3 si2356ds.pdf
SI2356DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Kind of package: reel; tape
Technology: TrenchFET®
Mounting: SMD
Drain-source voltage: 40V
Drain current: 4.3A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5968 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
209+ 0.34 EUR
261+ 0.27 EUR
371+ 0.19 EUR
486+ 0.15 EUR
516+ 0.14 EUR
3000+ 0.13 EUR
Mindestbestellmenge: 152
SI2365EDS-T1-BE3 si2365eds.pdf
Hersteller: VISHAY
SI2365EDS-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI2365EDS-T1-GE3 si2365eds.pdf
SI2365EDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI2366DS-T1-BE3
Hersteller: VISHAY
SI2366DS-T1-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2366DS-T1-GE3 si2366ds.pdf
Hersteller: VISHAY
SI2366DS-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI2367DS-T1-GE3 SI2367DS.pdf
SI2367DS-T1-GE3
+1
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 66mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369BDS-T1-GE3 si2369bds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2369DS-T1-GE3 si2369d.pdf
SI2369DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Drain-source voltage: -30V
Drain current: -7.6A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1908 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
186+ 0.38 EUR
224+ 0.32 EUR
291+ 0.25 EUR
307+ 0.23 EUR
3000+ 0.22 EUR
Mindestbestellmenge: 152
SI2371EDS-T1-GE3 si2371eds.pdf
SI2371EDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.8A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-BE3 si2374ds.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2374DS-T1-GE3 si2374ds.pdf
SI2374DS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.7A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.7A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2720 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
215+0.33 EUR
338+ 0.21 EUR
414+ 0.17 EUR
439+ 0.16 EUR
Mindestbestellmenge: 215
SI2377EDS-T1-GE3 SI2377EDS.pdf
SI2377EDS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2891 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
224+ 0.32 EUR
292+ 0.25 EUR
308+ 0.23 EUR
Mindestbestellmenge: 200
SI2387DS-T1-GE3 si2387ds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2392ADS-T1-GE3 si2392ads.pdf
SI2392ADS-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2392DS-T1-GE3 Si2392DS.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 10.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI2393DS-T1-GE3 si2393ds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI2399DS-T1-GE3 si2399ds.pdf
SI2399DS-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -20A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3127DV-T1-GE3 si3127dv.pdf
SI3127DV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: TSOP6
Drain-source voltage: -60V
Drain current: -5.1A
On-state resistance: 89mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3129DV-T1-GE3 si3129dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -5.4A; Idm: -20A
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Drain-source voltage: -80V
Drain current: -5.4A
On-state resistance: 124.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 4.2W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3407DV-T1-BE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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