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IRFBC40ASTRLPBF VISHAY sihfbc40.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBC40ASTRRPBF VISHAY sihfbc40.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBC40LCPBF IRFBC40LCPBF VISHAY IRFBC40LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
46+ 1.56 EUR
52+ 1.39 EUR
60+ 1.2 EUR
64+ 1.13 EUR
Mindestbestellmenge: 41
IRFBC40PBF IRFBC40PBF VISHAY IRFBC40PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 807 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
62+ 1.16 EUR
69+ 1.04 EUR
79+ 0.92 EUR
82+ 0.87 EUR
250+ 0.86 EUR
Mindestbestellmenge: 59
IRFBC40SPBF IRFBC40SPBF VISHAY IRFBC40S_IRFBC40L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBC40STRLPBF VISHAY sihfbc40.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBE20PBF IRFBE20PBF VISHAY IRFBE20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 7.2A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 7.2A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
50+ 1.43 EUR
250+ 0.83 EUR
Mindestbestellmenge: 38
IRFBE30LPBF VISHAY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBE30PBF IRFBE30PBF VISHAY IRFBE30PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.47 EUR
55+ 1.3 EUR
62+ 1.16 EUR
67+ 1.07 EUR
72+ 1 EUR
Mindestbestellmenge: 49
IRFBE30SPBF IRFBE30SPBF VISHAY IRFBE30.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.25 EUR
27+ 2.65 EUR
50+ 1.62 EUR
250+ 1.57 EUR
Mindestbestellmenge: 22
IRFBE30STRLPBF VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBF20LPBF VISHAY IRFBF20SPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.1A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBF20PBF IRFBF20PBF VISHAY IRFBF20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.1A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBF20SPBF IRFBF20SPBF VISHAY IRFBF20SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Mounting: SMD
Case: D2PAK; TO263
Drain-source voltage: 900V
Drain current: 1.1A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
10+ 7.15 EUR
16+ 4.46 EUR
44+ 1.63 EUR
250+ 0.97 EUR
Mindestbestellmenge: 9
IRFBF20STRLPBF VISHAY sihfb20s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.7A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBF20STRRPBF VISHAY sihfb20s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.7A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBF30PBF IRFBF30PBF VISHAY IRFBF30.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 914 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.67 EUR
46+ 1.59 EUR
51+ 1.42 EUR
57+ 1.27 EUR
60+ 1.2 EUR
250+ 1.16 EUR
Mindestbestellmenge: 43
IRFBF30STRLPBF VISHAY sihbf30s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.6A; Idm: 14A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.6A
Pulsed drain current: 14A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.7Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBG20PBF IRFBG20PBF VISHAY IRFBG20PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.86A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.86A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1250 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.07 EUR
48+ 1.5 EUR
81+ 0.89 EUR
87+ 0.83 EUR
Mindestbestellmenge: 35
IRFBG20PBF-BE3 VISHAY sihbg20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB
Mounting: THT
Drain-source voltage: 1kV
Power dissipation: 54W
Case: TO220AB
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 5.6A
Type of transistor: N-MOSFET
On-state resistance: 11Ω
Drain current: 1.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBG30PBF IRFBG30PBF VISHAY IRFBG30PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.77 EUR
49+ 1.49 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 41
IRFD014PBF IRFD014PBF VISHAY IRFD014PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: 1.2A
On-state resistance: 0.2Ω
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1401 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
79+ 0.91 EUR
156+ 0.46 EUR
166+ 0.43 EUR
Mindestbestellmenge: 45
IRFD020PBF VISHAY sihfd020.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 2.4A; Idm: 19A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 2.4A
Pulsed drain current: 19A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD024PBF IRFD024PBF VISHAY IRFD024PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: 1.8A
On-state resistance: 0.1Ω
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2782 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.04 EUR
59+ 1.22 EUR
109+ 0.66 EUR
117+ 0.61 EUR
Mindestbestellmenge: 35
IRFD110PBF IRFD110PBF VISHAY IRFD110PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.71A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: 0.71A
On-state resistance: 0.54Ω
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1504 Stücke:
Lieferzeit 7-14 Tag (e)
85+0.84 EUR
94+ 0.76 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 85
IRFD113PBF VISHAY sihfd113.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; Idm: 6.4A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Pulsed drain current: 6.4A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD120PBF IRFD120PBF VISHAY IRFD120PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.94A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: 0.94A
On-state resistance: 0.27Ω
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 873 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.34 EUR
115+ 0.62 EUR
122+ 0.59 EUR
Mindestbestellmenge: 54
IRFD123PBF VISHAY sihfd123.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 10A; 1.3W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 10A
Power dissipation: 1.3W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD210PBF IRFD210PBF VISHAY IRFD210PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.38A; 1W; DIP4
Drain-source voltage: 200V
Drain current: 0.38A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: DIP4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 541 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
120+ 0.6 EUR
133+ 0.54 EUR
167+ 0.43 EUR
176+ 0.41 EUR
Mindestbestellmenge: 76
IRFD220PBF IRFD220PBF VISHAY IRFD220PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.5A; 1W; DIP4
Case: DIP4
Drain-source voltage: 200V
Drain current: 0.5A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)
62+1.16 EUR
98+ 0.73 EUR
112+ 0.64 EUR
124+ 0.58 EUR
131+ 0.55 EUR
500+ 0.54 EUR
Mindestbestellmenge: 62
IRFD224PBF VISHAY sihfd224.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 630mA; Idm: 5A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.63A
Pulsed drain current: 5A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD320PBF IRFD320PBF VISHAY IRFD320PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.31A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.1 EUR
24+ 2.97 EUR
64+ 1.12 EUR
500+ 0.67 EUR
Mindestbestellmenge: 23
IRFD420PBF IRFD420PBF VISHAY IRFD420PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.23A; 1W; DIP4
Case: DIP4
Mounting: THT
Drain current: 0.23A
On-state resistance: 3Ω
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 275 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
85+ 0.85 EUR
107+ 0.67 EUR
112+ 0.64 EUR
500+ 0.63 EUR
Mindestbestellmenge: 76
IRFD9010PBF VISHAY sihfd901.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -1.1A; Idm: -8.8A; 1W; HVMDIP
Case: HVMDIP
Mounting: THT
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8.8A
Drain-source voltage: -50V
Drain current: -1.1A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD9014PBF IRFD9014PBF VISHAY IRFD9014PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.8A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: -0.8A
On-state resistance: 0.5Ω
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4706 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
97+ 0.74 EUR
110+ 0.65 EUR
122+ 0.59 EUR
129+ 0.55 EUR
Mindestbestellmenge: 64
IRFD9020PBF IRFD9020PBF VISHAY sihfd902.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; Idm: -13A; 1.3W; HVMDIP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -13A
Power dissipation: 1.3W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.39 EUR
55+ 1.31 EUR
62+ 1.15 EUR
117+ 0.61 EUR
124+ 0.58 EUR
Mindestbestellmenge: 52
IRFD9024PBF IRFD9024PBF VISHAY IRFD9024PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: -1.1A
On-state resistance: 0.28Ω
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4681 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.66 EUR
59+ 1.22 EUR
105+ 0.69 EUR
109+ 0.66 EUR
Mindestbestellmenge: 44
IRFD9110PBF IRFD9110PBF VISHAY irfd9110.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: -0.49A
On-state resistance: 1.2Ω
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 518 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.07 EUR
72+ 1 EUR
143+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 35
IRFD9120PBF IRFD9120PBF VISHAY irfd9120.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: -700mA
On-state resistance: 0.6Ω
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 381 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
107+ 0.67 EUR
121+ 0.59 EUR
140+ 0.51 EUR
148+ 0.49 EUR
Mindestbestellmenge: 65
IRFD9210PBF IRFD9210PBF VISHAY irfd9210.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4
Case: DIP4
Mounting: THT
Drain current: -250mA
On-state resistance: 3Ω
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2094 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
100+ 0.72 EUR
112+ 0.64 EUR
146+ 0.49 EUR
154+ 0.46 EUR
Mindestbestellmenge: 64
IRFD9220PBF IRFD9220PBF VISHAY IRFD9220PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.36A; 1W; DIP4
Case: DIP4
Mounting: THT
Drain current: -0.36A
On-state resistance: 1.5Ω
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 175 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.85 EUR
62+ 1.16 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 26
IRFDC20PBF VISHAY sihfdc20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 320mA; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI510GPBF IRFI510GPBF VISHAY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 963 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
79+ 0.91 EUR
118+ 0.61 EUR
125+ 0.58 EUR
5000+ 0.55 EUR
Mindestbestellmenge: 70
IRFI520GPBF IRFI520GPBF VISHAY IRFI520G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.1A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.1A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI530GPBF IRFI530GPBF VISHAY IRFI530G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI540GPBF IRFI540GPBF VISHAY IRFI540G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1213 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.32 EUR
61+ 1.19 EUR
68+ 1.06 EUR
80+ 0.9 EUR
84+ 0.86 EUR
Mindestbestellmenge: 55
IRFI620GPBF VISHAY 91146.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI630GPBF IRFI630GPBF VISHAY IRFI630G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 860 Stücke:
Lieferzeit 7-14 Tag (e)
63+1.14 EUR
97+ 0.74 EUR
100+ 0.72 EUR
Mindestbestellmenge: 63
IRFI634GPBF VISHAY 91149.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI640GPBF IRFI640GPBF VISHAY IRFI640G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.8A; Idm: 39A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.8A
Pulsed drain current: 39A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1001 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.86 EUR
35+ 2.07 EUR
55+ 1.32 EUR
58+ 1.24 EUR
1000+ 1.2 EUR
Mindestbestellmenge: 25
IRFI644GPBF IRFI644GPBF VISHAY IRFI644G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.2 EUR
52+ 1.39 EUR
55+ 1.32 EUR
1000+ 1.3 EUR
Mindestbestellmenge: 23
IRFI720GPBF VISHAY sihfi720.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI730GPBF VISHAY 91153.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI740GLCPBF VISHAY 91155.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI740GPBF IRFI740GPBF VISHAY irfi740gpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.4A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.4A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1593 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.35 EUR
73+ 0.99 EUR
93+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 31
IRFI820GPBF IRFI820GPBF VISHAY IRFI820G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.3A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI830GPBF IRFI830GPBF VISHAY IRFI830G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 197 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
59+ 1.22 EUR
76+ 0.94 EUR
81+ 0.89 EUR
500+ 0.87 EUR
Mindestbestellmenge: 50
IRFI840GLCPBF IRFI840GLCPBF VISHAY IRFI840GLC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 403 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.77 EUR
46+ 1.59 EUR
51+ 1.42 EUR
59+ 1.22 EUR
62+ 1.16 EUR
Mindestbestellmenge: 41
IRFI840GPBF IRFI840GPBF VISHAY IRFI840GPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.42 EUR
36+ 2.03 EUR
61+ 1.17 EUR
65+ 1.12 EUR
Mindestbestellmenge: 21
IRFI9520GPBF IRFI9520GPBF VISHAY IRFI9520G.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBC40ASTRLPBF sihfbc40.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBC40ASTRRPBF sihfbc40.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBC40LCPBF IRFBC40LC.pdf
IRFBC40LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
46+ 1.56 EUR
52+ 1.39 EUR
60+ 1.2 EUR
64+ 1.13 EUR
Mindestbestellmenge: 41
IRFBC40PBF IRFBC40PBF.pdf
IRFBC40PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 807 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
62+ 1.16 EUR
69+ 1.04 EUR
79+ 0.92 EUR
82+ 0.87 EUR
250+ 0.86 EUR
Mindestbestellmenge: 59
IRFBC40SPBF IRFBC40S_IRFBC40L.pdf
IRFBC40SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBC40STRLPBF sihfbc40.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBE20PBF IRFBE20.pdf
IRFBE20PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 7.2A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 7.2A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.89 EUR
50+ 1.43 EUR
250+ 0.83 EUR
Mindestbestellmenge: 38
IRFBE30LPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBE30PBF IRFBE30PBF.pdf
IRFBE30PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
55+ 1.3 EUR
62+ 1.16 EUR
67+ 1.07 EUR
72+ 1 EUR
Mindestbestellmenge: 49
IRFBE30SPBF IRFBE30.pdf
IRFBE30SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.25 EUR
27+ 2.65 EUR
50+ 1.62 EUR
250+ 1.57 EUR
Mindestbestellmenge: 22
IRFBE30STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBF20LPBF IRFBF20SPBF.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.1A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBF20PBF IRFBF20.pdf
IRFBF20PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.1A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBF20SPBF IRFBF20SPBF.pdf
IRFBF20SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Mounting: SMD
Case: D2PAK; TO263
Drain-source voltage: 900V
Drain current: 1.1A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+7.95 EUR
10+ 7.15 EUR
16+ 4.46 EUR
44+ 1.63 EUR
250+ 0.97 EUR
Mindestbestellmenge: 9
IRFBF20STRLPBF sihfb20s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.7A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBF20STRRPBF sihfb20s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.7A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBF30PBF IRFBF30.pdf
IRFBF30PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 914 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.67 EUR
46+ 1.59 EUR
51+ 1.42 EUR
57+ 1.27 EUR
60+ 1.2 EUR
250+ 1.16 EUR
Mindestbestellmenge: 43
IRFBF30STRLPBF sihbf30s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.6A; Idm: 14A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.6A
Pulsed drain current: 14A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.7Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBG20PBF IRFBG20PBF.pdf
IRFBG20PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.86A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.86A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.07 EUR
48+ 1.5 EUR
81+ 0.89 EUR
87+ 0.83 EUR
Mindestbestellmenge: 35
IRFBG20PBF-BE3 sihbg20.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB
Mounting: THT
Drain-source voltage: 1kV
Power dissipation: 54W
Case: TO220AB
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 5.6A
Type of transistor: N-MOSFET
On-state resistance: 11Ω
Drain current: 1.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBG30PBF IRFBG30PBF.pdf
IRFBG30PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.77 EUR
49+ 1.49 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 41
IRFD014PBF IRFD014PBF.pdf
IRFD014PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: 1.2A
On-state resistance: 0.2Ω
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1401 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.62 EUR
79+ 0.91 EUR
156+ 0.46 EUR
166+ 0.43 EUR
Mindestbestellmenge: 45
IRFD020PBF sihfd020.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 2.4A; Idm: 19A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 2.4A
Pulsed drain current: 19A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD024PBF IRFD024PBF.pdf
IRFD024PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: 1.8A
On-state resistance: 0.1Ω
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2782 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.04 EUR
59+ 1.22 EUR
109+ 0.66 EUR
117+ 0.61 EUR
Mindestbestellmenge: 35
IRFD110PBF IRFD110PBF.pdf
IRFD110PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.71A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: 0.71A
On-state resistance: 0.54Ω
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1504 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
85+0.84 EUR
94+ 0.76 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 85
IRFD113PBF sihfd113.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; Idm: 6.4A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Pulsed drain current: 6.4A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD120PBF IRFD120PBF.pdf
IRFD120PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.94A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: 0.94A
On-state resistance: 0.27Ω
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 873 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
115+ 0.62 EUR
122+ 0.59 EUR
Mindestbestellmenge: 54
IRFD123PBF sihfd123.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 10A; 1.3W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 10A
Power dissipation: 1.3W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD210PBF IRFD210PBF.pdf
IRFD210PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.38A; 1W; DIP4
Drain-source voltage: 200V
Drain current: 0.38A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: DIP4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 541 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
120+ 0.6 EUR
133+ 0.54 EUR
167+ 0.43 EUR
176+ 0.41 EUR
Mindestbestellmenge: 76
IRFD220PBF IRFD220PBF.pdf
IRFD220PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.5A; 1W; DIP4
Case: DIP4
Drain-source voltage: 200V
Drain current: 0.5A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
62+1.16 EUR
98+ 0.73 EUR
112+ 0.64 EUR
124+ 0.58 EUR
131+ 0.55 EUR
500+ 0.54 EUR
Mindestbestellmenge: 62
IRFD224PBF sihfd224.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 630mA; Idm: 5A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.63A
Pulsed drain current: 5A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD320PBF IRFD320PBF.pdf
IRFD320PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.31A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.1 EUR
24+ 2.97 EUR
64+ 1.12 EUR
500+ 0.67 EUR
Mindestbestellmenge: 23
IRFD420PBF IRFD420PBF.pdf
IRFD420PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.23A; 1W; DIP4
Case: DIP4
Mounting: THT
Drain current: 0.23A
On-state resistance: 3Ω
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 275 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
85+ 0.85 EUR
107+ 0.67 EUR
112+ 0.64 EUR
500+ 0.63 EUR
Mindestbestellmenge: 76
IRFD9010PBF sihfd901.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -1.1A; Idm: -8.8A; 1W; HVMDIP
Case: HVMDIP
Mounting: THT
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8.8A
Drain-source voltage: -50V
Drain current: -1.1A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD9014PBF IRFD9014PBF.pdf
IRFD9014PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.8A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: -0.8A
On-state resistance: 0.5Ω
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4706 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
97+ 0.74 EUR
110+ 0.65 EUR
122+ 0.59 EUR
129+ 0.55 EUR
Mindestbestellmenge: 64
IRFD9020PBF sihfd902.pdf
IRFD9020PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; Idm: -13A; 1.3W; HVMDIP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -13A
Power dissipation: 1.3W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.39 EUR
55+ 1.31 EUR
62+ 1.15 EUR
117+ 0.61 EUR
124+ 0.58 EUR
Mindestbestellmenge: 52
IRFD9024PBF IRFD9024PBF.pdf
IRFD9024PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: -1.1A
On-state resistance: 0.28Ω
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4681 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+1.66 EUR
59+ 1.22 EUR
105+ 0.69 EUR
109+ 0.66 EUR
Mindestbestellmenge: 44
IRFD9110PBF irfd9110.pdf
IRFD9110PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: -0.49A
On-state resistance: 1.2Ω
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 518 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.07 EUR
72+ 1 EUR
143+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 35
IRFD9120PBF irfd9120.pdf
IRFD9120PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Drain current: -700mA
On-state resistance: 0.6Ω
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 381 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.1 EUR
107+ 0.67 EUR
121+ 0.59 EUR
140+ 0.51 EUR
148+ 0.49 EUR
Mindestbestellmenge: 65
IRFD9210PBF irfd9210.pdf
IRFD9210PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4
Case: DIP4
Mounting: THT
Drain current: -250mA
On-state resistance: 3Ω
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2094 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
100+ 0.72 EUR
112+ 0.64 EUR
146+ 0.49 EUR
154+ 0.46 EUR
Mindestbestellmenge: 64
IRFD9220PBF IRFD9220PBF.pdf
IRFD9220PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.36A; 1W; DIP4
Case: DIP4
Mounting: THT
Drain current: -0.36A
On-state resistance: 1.5Ω
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 175 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.85 EUR
62+ 1.16 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 26
IRFDC20PBF sihfdc20.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 320mA; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI510GPBF
IRFI510GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 963 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
79+ 0.91 EUR
118+ 0.61 EUR
125+ 0.58 EUR
5000+ 0.55 EUR
Mindestbestellmenge: 70
IRFI520GPBF IRFI520G.pdf
IRFI520GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.1A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.1A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI530GPBF IRFI530G.pdf
IRFI530GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI540GPBF IRFI540G.pdf
IRFI540GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1213 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
55+1.32 EUR
61+ 1.19 EUR
68+ 1.06 EUR
80+ 0.9 EUR
84+ 0.86 EUR
Mindestbestellmenge: 55
IRFI620GPBF 91146.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI630GPBF IRFI630G.pdf
IRFI630GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 860 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
63+1.14 EUR
97+ 0.74 EUR
100+ 0.72 EUR
Mindestbestellmenge: 63
IRFI634GPBF 91149.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI640GPBF IRFI640G.pdf
IRFI640GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.8A; Idm: 39A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.8A
Pulsed drain current: 39A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1001 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.86 EUR
35+ 2.07 EUR
55+ 1.32 EUR
58+ 1.24 EUR
1000+ 1.2 EUR
Mindestbestellmenge: 25
IRFI644GPBF IRFI644G.pdf
IRFI644GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.2 EUR
52+ 1.39 EUR
55+ 1.32 EUR
1000+ 1.3 EUR
Mindestbestellmenge: 23
IRFI720GPBF sihfi720.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI730GPBF 91153.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI740GLCPBF description 91155.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI740GPBF irfi740gpbf.pdf
IRFI740GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.4A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.4A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1593 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
31+2.35 EUR
73+ 0.99 EUR
93+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 31
IRFI820GPBF IRFI820G.pdf
IRFI820GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.3A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI830GPBF IRFI830G.pdf
IRFI830GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 197 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.43 EUR
59+ 1.22 EUR
76+ 0.94 EUR
81+ 0.89 EUR
500+ 0.87 EUR
Mindestbestellmenge: 50
IRFI840GLCPBF IRFI840GLC.pdf
IRFI840GLCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 403 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.77 EUR
46+ 1.59 EUR
51+ 1.42 EUR
59+ 1.22 EUR
62+ 1.16 EUR
Mindestbestellmenge: 41
IRFI840GPBF IRFI840GPBF.pdf
IRFI840GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
21+3.42 EUR
36+ 2.03 EUR
61+ 1.17 EUR
65+ 1.12 EUR
Mindestbestellmenge: 21
IRFI9520GPBF IRFI9520G.pdf
IRFI9520GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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