| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SIJ150DP-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIJ186DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 79.4A; Idm: 150A Mounting: SMD Kind of package: reel; tape Power dissipation: 57W Polarisation: unipolar Gate charge: 37nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 79.4A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIJ188DP-T1-GE3 | VISHAY |
SIJ188DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIJ438ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 169A On-state resistance: 1.75mΩ Type of transistor: N-MOSFET Power dissipation: 69.4W Polarisation: unipolar Gate charge: 162nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 300A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIJ438DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 200A Power dissipation: 69.4W On-state resistance: 1.75mΩ Mounting: SMD Gate charge: 182nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIJ462ADP-T1-GE3 | VISHAY |
SIJ462ADP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIJ462DP-T1-GE3 | VISHAY |
SIJ462DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIJ470DP-T1-GE3 | VISHAY |
SIJ470DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIJ478DP-T1-GE3 | VISHAY |
SIJ478DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIJ4819DP-T1-GE3 | VISHAY | SIJ4819DP-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| SIJ482DP-T1-GE3 | VISHAY |
SIJ482DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SiJ494DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 36.8A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 36.8A Pulsed drain current: 100A Power dissipation: 69.4W Gate-source voltage: ±20V On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIJA52ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 131A Pulsed drain current: 200A Power dissipation: 48W On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIJA52DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 48W On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIJA54DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 36.7W On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIJA58ADP-T1-GE3 | VISHAY |
SIJA58ADP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIJA58DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 109A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 109A Pulsed drain current: 150A Power dissipation: 56.8W On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIJA72ADP-T1-GE3 | VISHAY |
SIJA72ADP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIJH112E-T1-GE3 | VISHAY | SIJH112E-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIJH5100E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 277A; Idm: 500A Kind of package: reel; tape On-state resistance: 2.14mΩ Type of transistor: N-MOSFET Case: PowerPAK® 8x8L Power dissipation: 333W Polarisation: unipolar Mounting: SMD Gate charge: 128nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 500A Drain-source voltage: 100V Drain current: 277A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| SIJH5800E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 302A; Idm: 500A Kind of package: reel; tape On-state resistance: 1.58mΩ Type of transistor: N-MOSFET Case: PowerPAK® 8x8L Power dissipation: 333W Polarisation: unipolar Mounting: SMD Gate charge: 155nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 500A Drain-source voltage: 80V Drain current: 302A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| SIJH600E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 373A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 373A Pulsed drain current: 500A Power dissipation: 333W Case: PowerPAK® 8x8L Gate-source voltage: ±20V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| SIJH800E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 299A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 299A Pulsed drain current: 350A Power dissipation: 333W Case: PowerPAK® 8x8L Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 0.21µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| SIP12107DMP-T1-GE3 | VISHAY |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 3A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.8...5.5V DC Output voltage: 0.6...4.675V DC Output current: 3A Case: QFN16 Mounting: SMD Frequency: 0.2...4MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIP12108ADMP-T1GE4 | VISHAY |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% Frequency: 0.2...4MHz Case: QFN16 Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Topology: buck Output current: 5A Output voltage: 0.6...4.675V DC Input voltage: 2.8...5.5V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIP12108DMP-T1GE4 | VISHAY |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.8...5.5V DC Output voltage: 0.6...4.675V DC Output current: 5A Case: QFN16 Mounting: SMD Frequency: 0.2...4MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIP12109DMP-T1-GE4 | VISHAY |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 4A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...15V DC Output voltage: 0.6...5.5V DC Output current: 4A Case: QFN16 Mounting: SMD Frequency: 0.2...1.5MHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape Efficiency: 95% Supply voltage: 4.5...5.5V Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIP12110DMP-T1-GE4 | VISHAY |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 6A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...15V DC Output voltage: 0.6...5.5V DC Output current: 6A Case: QFN16 Mounting: SMD Frequency: 0.2...1.5MHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape Efficiency: 95% Supply voltage: 4.5...5.5V Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIP12116DMP-T1-GE4 | VISHAY |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...15V DC Output voltage: 0.6...5.5V DC Output current: 3A Case: DFN10 Mounting: SMD Frequency: 0.6...0.6MHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape Efficiency: 95% Supply voltage: 4.5...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIP12117DMP-T1-GE4 | VISHAY |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...15V DC Output voltage: 0.6...5.5V DC Output current: 3A Case: DFN10 Mounting: SMD Frequency: 0.6...0.6MHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape Efficiency: 95% Supply voltage: 4.5...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIP2801DY-T1-E3 | VISHAY |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 46kHz Case: SO8 Mounting: SMD Operating temperature: -40...85°C Topology: boost; buck; buck-boost Supply voltage: 7.2...13.5V Duty cycle factor: 0...50% Application: SMPS DC supply current: 1mA Operating voltage: 6.9...13.5V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SIP2804DY-T1-E3 | VISHAY |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 46kHz Case: SO8 Mounting: SMD Operating temperature: -40...85°C Topology: boost; buck; buck-boost Supply voltage: 12.5...13.5V Duty cycle factor: 0...50% Application: SMPS DC supply current: 1mA Operating voltage: 8.3...13.5V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SIP32401ADNP-T1GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.4A; Ch: 1; N-Channel; SMD; TDFN4 Supply voltage: 1.1...5.5V DC Mounting: SMD Number of channels: 1 Case: TDFN4 Kind of output: N-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 62mΩ Output current: 2.4A Type of integrated circuit: power switch Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIP32409DNP-T1-GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.5A; Ch: 1; N-Channel; SMD; TDFN4 Supply voltage: 1.1...5.5V DC Mounting: SMD Number of channels: 1 Case: TDFN4 Kind of output: N-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 44mΩ Output current: 3.5A Type of integrated circuit: power switch Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIP32411DR-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SC70-6 Supply voltage: 1.1...5.5V DC Mounting: SMD Number of channels: 1 Case: SC70-6 Kind of output: N-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 101mΩ Output current: 2A Type of integrated circuit: power switch Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIP32419DN-T1-GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10 Supply voltage: 6...28V DC Mounting: SMD Number of channels: 1 Case: DFN10 Kind of output: P-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 56mΩ Output current: 3.5A Type of integrated circuit: power switch Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SIP32429DN-T1-GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10 Supply voltage: 6...28V DC Mounting: SMD Number of channels: 1 Case: DFN10 Kind of output: P-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 56mΩ Output current: 3.5A Type of integrated circuit: power switch Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIP32431DNP3-T1GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4 Supply voltage: 1.5...5.5V DC Mounting: SMD Number of channels: 1 Case: TDFN4 Kind of output: P-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 0.105Ω Output current: 1.4A Type of integrated circuit: power switch Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1710 Stücke: Lieferzeit 7-14 Tag (e) |
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SIP32431DR3-T1GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70 Supply voltage: 1.5...5.5V DC Mounting: SMD Number of channels: 1 Case: SC70 Kind of output: P-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 147mΩ Output current: 1.4A Type of integrated circuit: power switch Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIP32458DB-T2-GE1 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; P-Channel; SMD; WCSP6 Supply voltage: 1.5...5.5V DC Mounting: SMD Number of channels: 1 Case: WCSP6 Kind of output: P-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 20mΩ Output current: 3A Type of integrated circuit: power switch Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIP32461DB-T2-GE1 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; WCSP4 Supply voltage: 1.2...5.5V DC Mounting: SMD Number of channels: 1 Case: WCSP4 Kind of output: P-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 50MΩ Output current: 1.2A Type of integrated circuit: power switch Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIP32509DT-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23 Kind of integrated circuit: high-side Mounting: SMD Case: TSOT23 Supply voltage: 1.1...5.5V DC On-state resistance: 46mΩ Output current: 3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIP32510DT-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23 Kind of integrated circuit: high-side Mounting: SMD Case: TSOT23 Supply voltage: 1.2...5.5V DC On-state resistance: 46mΩ Output current: 3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIR104ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR104DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR104LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR106ADP-T1-RE3 | VISHAY |
SIR106ADP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR106DP-T1-RE3 | VISHAY |
SIR106DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR108DP-T1-RE3 | VISHAY |
SIR108DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR112DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 133A Pulsed drain current: 200A Power dissipation: 62.5W Case: PowerPAK® SO8 On-state resistance: 2.65mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR120DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 106A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR122DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Drain current: 59.6A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 44nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR122LDP-T1-RE3 | VISHAY | SIR122LDP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR124DP-T1-RE3 | VISHAY |
SIR124DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR1309DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -150A Drain-source voltage: -30V Drain current: -65.7A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 56.8W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR140DP-T1-RE3 | VISHAY |
SIR140DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR150DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 110A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Drain-source voltage: 45V Drain current: 110A On-state resistance: 3.97mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 70nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 300A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR158DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W Case: PowerPAK® SO8 Mounting: SMD Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 130nC Technology: TrenchFET® Gate-source voltage: ±20V Pulsed drain current: 400A Kind of channel: enhanced Drain-source voltage: 30V Drain current: 60A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR158DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W Case: PowerPAK® SO8 Mounting: SMD Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 130nC Technology: TrenchFET® Gate-source voltage: ±20V Pulsed drain current: 400A Kind of channel: enhanced Drain-source voltage: 30V Drain current: 60A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR164DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Case: PowerPAK® SO8 Drain-source voltage: 30V Drain current: 50A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Gate charge: 123nC Technology: TrenchFET® Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
| SIJ150DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIJ186DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 79.4A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 79.4A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 79.4A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 79.4A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIJ188DP-T1-GE3 |
|
Hersteller: VISHAY
SIJ188DP-T1-GE3 SMD N channel transistors
SIJ188DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIJ438ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 169A
On-state resistance: 1.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 69.4W
Polarisation: unipolar
Gate charge: 162nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 169A
On-state resistance: 1.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 69.4W
Polarisation: unipolar
Gate charge: 162nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIJ438DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 200A
Power dissipation: 69.4W
On-state resistance: 1.75mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 200A
Power dissipation: 69.4W
On-state resistance: 1.75mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIJ462ADP-T1-GE3 |
|
Hersteller: VISHAY
SIJ462ADP-T1-GE3 SMD N channel transistors
SIJ462ADP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIJ462DP-T1-GE3 |
|
Hersteller: VISHAY
SIJ462DP-T1-GE3 SMD N channel transistors
SIJ462DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIJ470DP-T1-GE3 |
|
Hersteller: VISHAY
SIJ470DP-T1-GE3 SMD N channel transistors
SIJ470DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIJ478DP-T1-GE3 |
|
Hersteller: VISHAY
SIJ478DP-T1-GE3 SMD N channel transistors
SIJ478DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIJ4819DP-T1-GE3 |
Hersteller: VISHAY
SIJ4819DP-T1-GE3 SMD P channel transistors
SIJ4819DP-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
| SIJ482DP-T1-GE3 |
|
Hersteller: VISHAY
SIJ482DP-T1-GE3 SMD N channel transistors
SIJ482DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SiJ494DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 36.8A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36.8A
Pulsed drain current: 100A
Power dissipation: 69.4W
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 36.8A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36.8A
Pulsed drain current: 100A
Power dissipation: 69.4W
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIJA52ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 131A
Pulsed drain current: 200A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 131A
Pulsed drain current: 200A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIJA52DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIJA54DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.7W
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.7W
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIJA58ADP-T1-GE3 |
|
Hersteller: VISHAY
SIJA58ADP-T1-GE3 SMD N channel transistors
SIJA58ADP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIJA58DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 109A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 109A
Pulsed drain current: 150A
Power dissipation: 56.8W
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 109A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 109A
Pulsed drain current: 150A
Power dissipation: 56.8W
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIJA72ADP-T1-GE3 |
|
Hersteller: VISHAY
SIJA72ADP-T1-GE3 SMD N channel transistors
SIJA72ADP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIJH112E-T1-GE3 |
Hersteller: VISHAY
SIJH112E-T1-GE3 SMD N channel transistors
SIJH112E-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIJH5100E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 277A; Idm: 500A
Kind of package: reel; tape
On-state resistance: 2.14mΩ
Type of transistor: N-MOSFET
Case: PowerPAK® 8x8L
Power dissipation: 333W
Polarisation: unipolar
Mounting: SMD
Gate charge: 128nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 100V
Drain current: 277A
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 277A; Idm: 500A
Kind of package: reel; tape
On-state resistance: 2.14mΩ
Type of transistor: N-MOSFET
Case: PowerPAK® 8x8L
Power dissipation: 333W
Polarisation: unipolar
Mounting: SMD
Gate charge: 128nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 100V
Drain current: 277A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| SIJH5800E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 302A; Idm: 500A
Kind of package: reel; tape
On-state resistance: 1.58mΩ
Type of transistor: N-MOSFET
Case: PowerPAK® 8x8L
Power dissipation: 333W
Polarisation: unipolar
Mounting: SMD
Gate charge: 155nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 80V
Drain current: 302A
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 302A; Idm: 500A
Kind of package: reel; tape
On-state resistance: 1.58mΩ
Type of transistor: N-MOSFET
Case: PowerPAK® 8x8L
Power dissipation: 333W
Polarisation: unipolar
Mounting: SMD
Gate charge: 155nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 80V
Drain current: 302A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| SIJH600E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 373A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 373A
Pulsed drain current: 500A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 373A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 373A
Pulsed drain current: 500A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| SIJH800E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 299A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 299A
Pulsed drain current: 350A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 299A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 299A
Pulsed drain current: 350A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| SIP12107DMP-T1-GE3 |
|
Hersteller: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.8...5.5V DC
Output voltage: 0.6...4.675V DC
Output current: 3A
Case: QFN16
Mounting: SMD
Frequency: 0.2...4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.8...5.5V DC
Output voltage: 0.6...4.675V DC
Output current: 3A
Case: QFN16
Mounting: SMD
Frequency: 0.2...4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP12108ADMP-T1GE4 |
|
Hersteller: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Frequency: 0.2...4MHz
Case: QFN16
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Topology: buck
Output current: 5A
Output voltage: 0.6...4.675V DC
Input voltage: 2.8...5.5V DC
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Frequency: 0.2...4MHz
Case: QFN16
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Topology: buck
Output current: 5A
Output voltage: 0.6...4.675V DC
Input voltage: 2.8...5.5V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP12108DMP-T1GE4 |
|
Hersteller: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.8...5.5V DC
Output voltage: 0.6...4.675V DC
Output current: 5A
Case: QFN16
Mounting: SMD
Frequency: 0.2...4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.8...5.5V DC
Output voltage: 0.6...4.675V DC
Output current: 5A
Case: QFN16
Mounting: SMD
Frequency: 0.2...4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP12109DMP-T1-GE4 |
|
Hersteller: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 4A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 4A
Case: QFN16
Mounting: SMD
Frequency: 0.2...1.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 4A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 4A
Case: QFN16
Mounting: SMD
Frequency: 0.2...1.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP12110DMP-T1-GE4 |
|
Hersteller: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 6A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 6A
Case: QFN16
Mounting: SMD
Frequency: 0.2...1.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 6A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 6A
Case: QFN16
Mounting: SMD
Frequency: 0.2...1.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP12116DMP-T1-GE4 |
|
Hersteller: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP12117DMP-T1-GE4 |
|
Hersteller: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP2801DY-T1-E3 |
|
Hersteller: VISHAY
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 46kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: boost; buck; buck-boost
Supply voltage: 7.2...13.5V
Duty cycle factor: 0...50%
Application: SMPS
DC supply current: 1mA
Operating voltage: 6.9...13.5V
Anzahl je Verpackung: 2500 Stücke
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 46kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: boost; buck; buck-boost
Supply voltage: 7.2...13.5V
Duty cycle factor: 0...50%
Application: SMPS
DC supply current: 1mA
Operating voltage: 6.9...13.5V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| SIP2804DY-T1-E3 |
|
Hersteller: VISHAY
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 46kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: boost; buck; buck-boost
Supply voltage: 12.5...13.5V
Duty cycle factor: 0...50%
Application: SMPS
DC supply current: 1mA
Operating voltage: 8.3...13.5V
Anzahl je Verpackung: 2500 Stücke
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 46kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: boost; buck; buck-boost
Supply voltage: 12.5...13.5V
Duty cycle factor: 0...50%
Application: SMPS
DC supply current: 1mA
Operating voltage: 8.3...13.5V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| SIP32401ADNP-T1GE4 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.4A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 62mΩ
Output current: 2.4A
Type of integrated circuit: power switch
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.4A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 62mΩ
Output current: 2.4A
Type of integrated circuit: power switch
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIP32409DNP-T1-GE4 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 44mΩ
Output current: 3.5A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 44mΩ
Output current: 3.5A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 105+ | 0.69 EUR |
| 126+ | 0.57 EUR |
| 151+ | 0.47 EUR |
| 260+ | 0.28 EUR |
| 275+ | 0.26 EUR |
| 3000+ | 0.25 EUR |
| SIP32411DR-T1-GE3 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SC70-6
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: SC70-6
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 101mΩ
Output current: 2A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SC70-6
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: SC70-6
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 101mΩ
Output current: 2A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP32419DN-T1-GE4 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
Output current: 3.5A
Type of integrated circuit: power switch
Anzahl je Verpackung: 2500 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
Output current: 3.5A
Type of integrated circuit: power switch
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| SIP32429DN-T1-GE4 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
Output current: 3.5A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
Output current: 3.5A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP32431DNP3-T1GE4 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 0.105Ω
Output current: 1.4A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 0.105Ω
Output current: 1.4A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1710 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 97+ | 0.74 EUR |
| 113+ | 0.64 EUR |
| 123+ | 0.58 EUR |
| 202+ | 0.35 EUR |
| 214+ | 0.33 EUR |
| 9000+ | 0.32 EUR |
| SIP32431DR3-T1GE3 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Number of channels: 1
Case: SC70
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 147mΩ
Output current: 1.4A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Number of channels: 1
Case: SC70
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 147mΩ
Output current: 1.4A
Type of integrated circuit: power switch
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 0.8 EUR |
| 108+ | 0.66 EUR |
| 129+ | 0.56 EUR |
| 202+ | 0.35 EUR |
| 214+ | 0.33 EUR |
| 3000+ | 0.32 EUR |
| SIP32458DB-T2-GE1 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; P-Channel; SMD; WCSP6
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP6
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 20mΩ
Output current: 3A
Type of integrated circuit: power switch
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; P-Channel; SMD; WCSP6
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP6
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 20mΩ
Output current: 3A
Type of integrated circuit: power switch
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIP32461DB-T2-GE1 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; WCSP4
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP4
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 50MΩ
Output current: 1.2A
Type of integrated circuit: power switch
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; WCSP4
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP4
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 50MΩ
Output current: 1.2A
Type of integrated circuit: power switch
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIP32509DT-T1-GE3 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Kind of integrated circuit: high-side
Mounting: SMD
Case: TSOT23
Supply voltage: 1.1...5.5V DC
On-state resistance: 46mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Kind of integrated circuit: high-side
Mounting: SMD
Case: TSOT23
Supply voltage: 1.1...5.5V DC
On-state resistance: 46mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIP32510DT-T1-GE3 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Kind of integrated circuit: high-side
Mounting: SMD
Case: TSOT23
Supply voltage: 1.2...5.5V DC
On-state resistance: 46mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Kind of integrated circuit: high-side
Mounting: SMD
Case: TSOT23
Supply voltage: 1.2...5.5V DC
On-state resistance: 46mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIR104ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR104DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR104LDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR106ADP-T1-RE3 |
|
Hersteller: VISHAY
SIR106ADP-T1-RE3 SMD N channel transistors
SIR106ADP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR106DP-T1-RE3 |
|
Hersteller: VISHAY
SIR106DP-T1-RE3 SMD N channel transistors
SIR106DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR108DP-T1-RE3 |
|
Hersteller: VISHAY
SIR108DP-T1-RE3 SMD N channel transistors
SIR108DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR112DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 133A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 133A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR120DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR122DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR122LDP-T1-RE3 |
Hersteller: VISHAY
SIR122LDP-T1-RE3 SMD N channel transistors
SIR122LDP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR124DP-T1-RE3 |
|
Hersteller: VISHAY
SIR124DP-T1-RE3 SMD N channel transistors
SIR124DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR1309DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Drain-source voltage: -30V
Drain current: -65.7A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 56.8W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Drain-source voltage: -30V
Drain current: -65.7A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 56.8W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR140DP-T1-RE3 |
|
Hersteller: VISHAY
SIR140DP-T1-RE3 SMD N channel transistors
SIR140DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR150DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 110A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Drain-source voltage: 45V
Drain current: 110A
On-state resistance: 3.97mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 110A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Drain-source voltage: 45V
Drain current: 110A
On-state resistance: 3.97mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR158DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 130nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 130nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR158DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 130nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 130nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR164DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 123nC
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 123nC
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar