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YJ7N65CI YJ7N65CI YANGJIE TECHNOLOGY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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YJ7N80CI YJ7N80CI YANGJIE TECHNOLOGY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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YJD112005PYG4 YANGJIE TECHNOLOGY YJD112005PYG4.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.9V
Max. forward impulse current: 40A
Leakage current: 5µA
Kind of package: tube
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YJD15N10A YJD15N10A YANGJIE TECHNOLOGY YJD15N10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 35 Stücke:
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35+2.04 EUR
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YJD20N06A YJD20N06A YANGJIE TECHNOLOGY YJD20N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 9360 Stücke:
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220+0.33 EUR
260+0.28 EUR
290+0.25 EUR
500+0.22 EUR
2500+0.2 EUR
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YJD50N06A YANGJIE TECHNOLOGY YJD50N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 21.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJD60N04A YJD60N04A YANGJIE TECHNOLOGY YJD60N04A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJH03N10A YJH03N10A YANGJIE TECHNOLOGY YJH03N10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 4W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6880 Stücke:
Lieferzeit 14-21 Tag (e)
405+0.18 EUR
575+0.12 EUR
645+0.11 EUR
3000+0.099 EUR
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YJL03G10A YJL03G10A YANGJIE TECHNOLOGY YJL03G10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 12A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
auf Bestellung 25 Stücke:
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YJL2300A YJL2300A YANGJIE TECHNOLOGY YJL2300A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJL2301C YJL2301C YANGJIE TECHNOLOGY YJL2301C.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 210 Stücke:
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210+0.34 EUR
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YJL2301D YJL2301D YANGJIE TECHNOLOGY YJL2301D.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 740 Stücke:
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740+0.097 EUR
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YJL2301F YJL2301F YANGJIE TECHNOLOGY YJL2301F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1260 Stücke:
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1080+0.066 EUR
1260+0.057 EUR
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YJL2301G YJL2301G YANGJIE TECHNOLOGY YJL2301G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJL2302A YJL2302A YANGJIE TECHNOLOGY YJL2302A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJL2304A YJL2304A YANGJIE TECHNOLOGY YJL2304A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJL2305A YJL2305A YANGJIE TECHNOLOGY YJL2305A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1860 Stücke:
Lieferzeit 14-21 Tag (e)
1090+0.066 EUR
1440+0.05 EUR
1620+0.044 EUR
Mindestbestellmenge: 1090
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YJL2305B YJL2305B YANGJIE TECHNOLOGY YJL2305B.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJL2312A YJL2312A YANGJIE TECHNOLOGY YJL2312A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
1170+0.061 EUR
1300+0.055 EUR
1470+0.049 EUR
Mindestbestellmenge: 1170
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YJL3400B YANGJIE TECHNOLOGY YJL3400B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 40A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJL3401A YJL3401A YANGJIE TECHNOLOGY YJL3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
1140+0.064 EUR
1260+0.057 EUR
1420+0.051 EUR
Mindestbestellmenge: 1140
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YJL3401AL YJL3401AL YANGJIE TECHNOLOGY YJL3401AL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
1125+0.064 EUR
1260+0.057 EUR
3000+0.051 EUR
Mindestbestellmenge: 500
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YJL3404B YANGJIE TECHNOLOGY YJL3404B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 40A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJL3407A YJL3407A YANGJIE TECHNOLOGY YJL3407A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1670 Stücke:
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140+0.51 EUR
279+0.26 EUR
559+0.13 EUR
798+0.09 EUR
997+0.072 EUR
1117+0.064 EUR
1330+0.054 EUR
Mindestbestellmenge: 140
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YJL3407AL YJL3407AL YANGJIE TECHNOLOGY YJL3407AL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2730 Stücke:
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880+0.082 EUR
1400+0.051 EUR
1570+0.046 EUR
Mindestbestellmenge: 880
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YJM04N10A YJM04N10A YANGJIE TECHNOLOGY YJM04N10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1360 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.12 EUR
625+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 600
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YJQ3400A YJQ3400A YANGJIE TECHNOLOGY YJQ3400A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 435 Stücke:
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435+0.16 EUR
Mindestbestellmenge: 435
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YJQ35N04A YJQ35N04A YANGJIE TECHNOLOGY YJQ35N04A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
275+0.26 EUR
305+0.24 EUR
345+0.21 EUR
500+0.19 EUR
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YJQ4666B YJQ4666B YANGJIE TECHNOLOGY YJQ4666B.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -5.6A
Pulsed drain current: -28A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
910+0.079 EUR
1180+0.061 EUR
1290+0.056 EUR
Mindestbestellmenge: 910
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YJS03N10A YJS03N10A YANGJIE TECHNOLOGY YJS03N10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJS12N10A YJS12N10A YANGJIE TECHNOLOGY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJS2301A YJS2301A YANGJIE TECHNOLOGY YJS2301A.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
850+0.084 EUR
950+0.076 EUR
1000+0.072 EUR
Mindestbestellmenge: 850
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YJS4606A YJS4606A YANGJIE TECHNOLOGY Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-5A
Pulsed drain current: 24...-20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1787 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
642+0.11 EUR
714+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 500
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YJS9435A YJS9435A YANGJIE TECHNOLOGY YJS9435A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJSD12N03A YJSD12N03A YANGJIE TECHNOLOGY YJSD12N03A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.6A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7235 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
345+0.21 EUR
390+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
ZMM55C3V3 Yangjie Technology ZMM55_Yangjie.pdf Стабілітрон SMD, Uz, В = 3,3, Точн., % = 5, Тексп, °C = до 175,... Група товару: Діоди Корпус: SOD-80 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
verfügbar 2250 Stücke:
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YJ7N65CI
YJ7N65CI
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJ7N80CI
YJ7N80CI
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJD112005PYG4 YJD112005PYG4.pdf
Hersteller: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.9V
Max. forward impulse current: 40A
Leakage current: 5µA
Kind of package: tube
Produkt ist nicht verfügbar
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YJD15N10A YJD15N10A.pdf
YJD15N10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
Mindestbestellmenge: 35
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YJD20N06A YJD20N06A.pdf
YJD20N06A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 9360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
220+0.33 EUR
260+0.28 EUR
290+0.25 EUR
500+0.22 EUR
2500+0.2 EUR
Mindestbestellmenge: 220
Im Einkaufswagen  Stück im Wert von  UAH
YJD50N06A YJD50N06A.pdf
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 21.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJD60N04A YJD60N04A.pdf
YJD60N04A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJH03N10A YJH03N10A.pdf
YJH03N10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 4W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
405+0.18 EUR
575+0.12 EUR
645+0.11 EUR
3000+0.099 EUR
Mindestbestellmenge: 405
Im Einkaufswagen  Stück im Wert von  UAH
YJL03G10A YJL03G10A.pdf
YJL03G10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 12A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
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YJL2300A YJL2300A.pdf
YJL2300A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJL2301C YJL2301C.pdf
YJL2301C
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
210+0.34 EUR
Mindestbestellmenge: 210
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YJL2301D YJL2301D.pdf
YJL2301D
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
740+0.097 EUR
Mindestbestellmenge: 740
Im Einkaufswagen  Stück im Wert von  UAH
YJL2301F YJL2301F.pdf
YJL2301F
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1080+0.066 EUR
1260+0.057 EUR
Mindestbestellmenge: 1080
Im Einkaufswagen  Stück im Wert von  UAH
YJL2301G YJL2301G.pdf
YJL2301G
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJL2302A YJL2302A.pdf
YJL2302A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJL2304A YJL2304A.pdf
YJL2304A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJL2305A YJL2305A.pdf
YJL2305A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1860 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1090+0.066 EUR
1440+0.05 EUR
1620+0.044 EUR
Mindestbestellmenge: 1090
Im Einkaufswagen  Stück im Wert von  UAH
YJL2305B YJL2305B.pdf
YJL2305B
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJL2312A YJL2312A.pdf
YJL2312A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1170+0.061 EUR
1300+0.055 EUR
1470+0.049 EUR
Mindestbestellmenge: 1170
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YJL3400B YJL3400B.pdf
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 40A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJL3401A YJL3401A.pdf
YJL3401A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1140+0.064 EUR
1260+0.057 EUR
1420+0.051 EUR
Mindestbestellmenge: 1140
Im Einkaufswagen  Stück im Wert von  UAH
YJL3401AL YJL3401AL.pdf
YJL3401AL
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
1125+0.064 EUR
1260+0.057 EUR
3000+0.051 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
YJL3404B YJL3404B.pdf
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 40A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJL3407A YJL3407A.pdf
YJL3407A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
140+0.51 EUR
279+0.26 EUR
559+0.13 EUR
798+0.09 EUR
997+0.072 EUR
1117+0.064 EUR
1330+0.054 EUR
Mindestbestellmenge: 140
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YJL3407AL YJL3407AL.pdf
YJL3407AL
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
880+0.082 EUR
1400+0.051 EUR
1570+0.046 EUR
Mindestbestellmenge: 880
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YJM04N10A YJM04N10A.pdf
YJM04N10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
600+0.12 EUR
625+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 600
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YJQ3400A YJQ3400A.pdf
YJQ3400A
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
435+0.16 EUR
Mindestbestellmenge: 435
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YJQ35N04A YJQ35N04A.pdf
YJQ35N04A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
275+0.26 EUR
305+0.24 EUR
345+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 275
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YJQ4666B YJQ4666B.pdf
YJQ4666B
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -5.6A
Pulsed drain current: -28A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
910+0.079 EUR
1180+0.061 EUR
1290+0.056 EUR
Mindestbestellmenge: 910
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YJS03N10A YJS03N10A.pdf
YJS03N10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJS12N10A
YJS12N10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJS2301A YJS2301A.pdf
YJS2301A
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
850+0.084 EUR
950+0.076 EUR
1000+0.072 EUR
Mindestbestellmenge: 850
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YJS4606A
YJS4606A
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-5A
Pulsed drain current: 24...-20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1787 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
642+0.11 EUR
714+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 500
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YJS9435A YJS9435A.pdf
YJS9435A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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YJSD12N03A YJSD12N03A.pdf
YJSD12N03A
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.6A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
345+0.21 EUR
390+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 250
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ZMM55C3V3 ZMM55_Yangjie.pdf
Hersteller: Yangjie Technology
Стабілітрон SMD, Uz, В = 3,3, Точн., % = 5, Тексп, °C = до 175,... Група товару: Діоди Корпус: SOD-80 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
verfügbar 2250 Stücke:
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