Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (3912) > Seite 4 nach 66
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1N5404 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 0.4kV Case: DO27 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape |
auf Bestellung 1119 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5404 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 0.4kV Case: DO27 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1119 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5404G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.4kV Case: DO27 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5404G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.4kV Case: DO27 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 117 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5406 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5406G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5407 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Case: DO27 Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 0.8kV Kind of package: tape |
auf Bestellung 941 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5407 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Case: DO27 Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 0.8kV Kind of package: tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 941 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5407G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Case: DO27 Mounting: THT Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Kind of package: tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5408 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 1kV Kind of package: tape Case: DO27 |
auf Bestellung 1284 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 1kV Kind of package: tape Case: DO27 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1284 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5408G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: tape Features of semiconductor devices: glass passivated Case: DO27 |
auf Bestellung 3694 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: tape Features of semiconductor devices: glass passivated Case: DO27 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3694 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5819 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V Kind of package: tape |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5819 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V Kind of package: tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5822 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: tape |
auf Bestellung 4730 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5822 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4730 Stücke: Lieferzeit 7-14 Tag (e) |
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| 1N5822 | Yangjie Technology |
Діод Шотткі вивідний; Io, A = 3; Uзвор, В = 40; If, А = 3; Тексп, °C = -55...+125; DO-27 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1SS355Q | Yangjie Technology |
Description: SOD-323 80V 0.15A Diodes RectiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002 | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4850 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 147 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N7002K | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Technology: TRENCH POWER MV Pulsed drain current: 1.5A Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N7002KC | Yangjie Technology |
Description: SOT-23 N 60V 0.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCDW | Yangjie Technology |
Description: SOT-363 N 60V 0.3A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCDWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCE | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCQ | Yangjie Technology |
Description: SOT-23 N 60V 0.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCW | Yangjie Technology |
Description: SOT-323 N 60V 0.3A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCX | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002W | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 5325 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002W | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 25 Stücke |
auf Bestellung 5325 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA1037-Q | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 120...270 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Case: SOT23 |
auf Bestellung 1275 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1037-R | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 180...390 Kind of package: reel; tape Polarisation: bipolar Case: SOT23 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2SA1037-S | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 270...560 Kind of package: reel; tape Polarisation: bipolar Case: SOT23 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2SA1037-Q | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1037-Q | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 120...270 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Case: SOT23 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 1275 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA1037-S | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1576A-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1576A-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1576A-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA812-M4 | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2SA812-M5 | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 135...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2SA812-M6 | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
auf Bestellung 5550 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA812-M7 | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2SA812-M5 | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA812-M6 | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A -60V Trans Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA812-M6 | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Anzahl je Verpackung: 25 Stücke |
auf Bestellung 5550 Stücke: Lieferzeit 7-14 Tag (e) |
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2SB1188-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 80MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 500 mW |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1188-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 80MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 500 mW |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1197-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1198-R | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.2W; SOT23 Polarisation: bipolar Type of transistor: PNP Case: SOT23 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.2W Collector current: 0.5A Collector-emitter voltage: 80V Current gain: 180...390 Frequency: 180MHz |
auf Bestellung 2830 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1198-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1198-R | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.2W; SOT23 Polarisation: bipolar Type of transistor: PNP Case: SOT23 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.2W Collector current: 0.5A Collector-emitter voltage: 80V Current gain: 180...390 Frequency: 180MHz Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2830 Stücke: Lieferzeit 7-14 Tag (e) |
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2SB1198-RQ | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SC1623-L6 | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.1A 60V Transis Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 250MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2383P-O | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2383P-Y | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2412-Q | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz Application: automotive industry |
auf Bestellung 5850 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2412-R | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
auf Bestellung 5650 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 1N5404 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
auf Bestellung 1119 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 110+ | 0.65 EUR |
| 300+ | 0.24 EUR |
| 365+ | 0.2 EUR |
| 472+ | 0.15 EUR |
| 589+ | 0.12 EUR |
| 658+ | 0.11 EUR |
| 1N5404 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1119 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 110+ | 0.65 EUR |
| 300+ | 0.24 EUR |
| 365+ | 0.2 EUR |
| 472+ | 0.15 EUR |
| 589+ | 0.12 EUR |
| 658+ | 0.11 EUR |
| 1N5404G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 108+ | 0.66 EUR |
| 117+ | 0.61 EUR |
| 1N5404G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 117 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 108+ | 0.66 EUR |
| 117+ | 0.61 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.14 EUR |
| 1N5406 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5406G |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5407 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Case: DO27
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.8kV
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Case: DO27
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.8kV
Kind of package: tape
auf Bestellung 941 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 135+ | 0.53 EUR |
| 365+ | 0.2 EUR |
| 447+ | 0.16 EUR |
| 575+ | 0.12 EUR |
| 715+ | 0.1 EUR |
| 807+ | 0.089 EUR |
| 1N5407 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Case: DO27
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.8kV
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Case: DO27
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.8kV
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 941 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 135+ | 0.53 EUR |
| 365+ | 0.2 EUR |
| 447+ | 0.16 EUR |
| 575+ | 0.12 EUR |
| 715+ | 0.1 EUR |
| 807+ | 0.089 EUR |
| 1N5407G |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Case: DO27
Mounting: THT
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Case: DO27
Mounting: THT
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5408 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
auf Bestellung 1284 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 126+ | 0.57 EUR |
| 345+ | 0.21 EUR |
| 421+ | 0.17 EUR |
| 538+ | 0.13 EUR |
| 676+ | 0.11 EUR |
| 758+ | 0.094 EUR |
| 1250+ | 0.08 EUR |
| 1N5408 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1284 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 126+ | 0.57 EUR |
| 345+ | 0.21 EUR |
| 421+ | 0.17 EUR |
| 538+ | 0.13 EUR |
| 676+ | 0.11 EUR |
| 758+ | 0.094 EUR |
| 1N5408G |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Features of semiconductor devices: glass passivated
Case: DO27
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Features of semiconductor devices: glass passivated
Case: DO27
auf Bestellung 3694 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 108+ | 0.66 EUR |
| 296+ | 0.24 EUR |
| 360+ | 0.2 EUR |
| 463+ | 0.15 EUR |
| 575+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 1250+ | 0.093 EUR |
| 2500+ | 0.083 EUR |
| 1N5408G |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Features of semiconductor devices: glass passivated
Case: DO27
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Features of semiconductor devices: glass passivated
Case: DO27
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3694 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 108+ | 0.66 EUR |
| 296+ | 0.24 EUR |
| 360+ | 0.2 EUR |
| 463+ | 0.15 EUR |
| 575+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 1N5819 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| 1N5819 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| 10+ | 7.15 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.072 EUR |
| 5000+ | 0.024 EUR |
| 15000+ | 0.023 EUR |
| 1N5822 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
auf Bestellung 4730 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 358+ | 0.2 EUR |
| 509+ | 0.14 EUR |
| 714+ | 0.1 EUR |
| 1250+ | 0.076 EUR |
| 2500+ | 0.07 EUR |
| 1N5822 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4730 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 358+ | 0.2 EUR |
| 509+ | 0.14 EUR |
| 714+ | 0.1 EUR |
| 1250+ | 0.076 EUR |
| 2500+ | 0.07 EUR |
| 5000+ | 0.067 EUR |
| 1N5822 |
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Hersteller: Yangjie Technology
Діод Шотткі вивідний; Io, A = 3; Uзвор, В = 40; If, А = 3; Тексп, °C = -55...+125; DO-27
Діод Шотткі вивідний; Io, A = 3; Uзвор, В = 40; If, А = 3; Тексп, °C = -55...+125; DO-27
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 1SS355Q |
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Hersteller: Yangjie Technology
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.028 EUR |
| 15000+ | 0.026 EUR |
| 30000+ | 0.025 EUR |
| 60000+ | 0.023 EUR |
| 120000+ | 0.021 EUR |
| 300000+ | 0.019 EUR |
| 2N7002 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4850 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1825+ | 0.039 EUR |
| 4400+ | 0.016 EUR |
| 4850+ | 0.014 EUR |
| 2N7002A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 2N7002K |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Pulsed drain current: 1.5A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Pulsed drain current: 1.5A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002KC |
![]() |
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.028 EUR |
| 15000+ | 0.026 EUR |
| 30000+ | 0.025 EUR |
| 60000+ | 0.023 EUR |
| 120000+ | 0.021 EUR |
| 300000+ | 0.019 EUR |
| 2N7002KCDW |
![]() |
Hersteller: Yangjie Technology
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.048 EUR |
| 15000+ | 0.044 EUR |
| 30000+ | 0.042 EUR |
| 60000+ | 0.039 EUR |
| 120000+ | 0.035 EUR |
| 300000+ | 0.032 EUR |
| 2N7002KCDWQ |
![]() |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.074 EUR |
| 15000+ | 0.07 EUR |
| 30000+ | 0.067 EUR |
| 60000+ | 0.062 EUR |
| 120000+ | 0.056 EUR |
| 300000+ | 0.051 EUR |
| 2N7002KCE |
![]() |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.03 EUR |
| 60000+ | 0.028 EUR |
| 120000+ | 0.026 EUR |
| 300000+ | 0.025 EUR |
| 2N7002KCQ |
![]() |
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.058 EUR |
| 15000+ | 0.055 EUR |
| 30000+ | 0.051 EUR |
| 60000+ | 0.048 EUR |
| 120000+ | 0.044 EUR |
| 300000+ | 0.04 EUR |
| 2N7002KCW |
![]() |
Hersteller: Yangjie Technology
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.033 EUR |
| 15000+ | 0.032 EUR |
| 30000+ | 0.03 EUR |
| 60000+ | 0.028 EUR |
| 120000+ | 0.025 EUR |
| 300000+ | 0.023 EUR |
| 2N7002KCWQ |
![]() |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.065 EUR |
| 15000+ | 0.062 EUR |
| 30000+ | 0.058 EUR |
| 60000+ | 0.055 EUR |
| 120000+ | 0.048 EUR |
| 300000+ | 0.044 EUR |
| 2N7002KCX |
![]() |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.055 EUR |
| 15000+ | 0.051 EUR |
| 30000+ | 0.048 EUR |
| 60000+ | 0.046 EUR |
| 120000+ | 0.04 EUR |
| 300000+ | 0.037 EUR |
| 2N7002W |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5325 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1875+ | 0.038 EUR |
| 4400+ | 0.016 EUR |
| 4925+ | 0.015 EUR |
| 5325+ | 0.013 EUR |
| 2N7002W |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 25 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 25 Stücke
auf Bestellung 5325 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1875+ | 0.038 EUR |
| 4400+ | 0.016 EUR |
| 4925+ | 0.015 EUR |
| 5325+ | 0.013 EUR |
| 15000+ | 0.012 EUR |
| 2SA1037-Q |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
auf Bestellung 1275 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1275+ | 0.056 EUR |
| 2SA1037-R |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1037-S |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 270...560
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 270...560
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1037-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.026 EUR |
| 15000+ | 0.024 EUR |
| 30000+ | 0.023 EUR |
| 60000+ | 0.021 EUR |
| 120000+ | 0.019 EUR |
| 300000+ | 0.018 EUR |
| 2SA1037-Q |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
Anzahl je Verpackung: 25 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
Anzahl je Verpackung: 25 Stücke
auf Bestellung 1275 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1275+ | 0.056 EUR |
| 3000+ | 0.024 EUR |
| 15000+ | 0.015 EUR |
| 2SA1037-S |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.024 EUR |
| 15000+ | 0.023 EUR |
| 30000+ | 0.021 EUR |
| 60000+ | 0.019 EUR |
| 120000+ | 0.018 EUR |
| 300000+ | 0.016 EUR |
| 2SA1576A-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.033 EUR |
| 15000+ | 0.032 EUR |
| 30000+ | 0.03 EUR |
| 60000+ | 0.026 EUR |
| 120000+ | 0.025 EUR |
| 300000+ | 0.023 EUR |
| 2SA1576A-R |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.03 EUR |
| 15000+ | 0.028 EUR |
| 30000+ | 0.026 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SA1576A-S |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.03 EUR |
| 15000+ | 0.028 EUR |
| 30000+ | 0.026 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SA812-M4 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA812-M5 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA812-M6 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 5550 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2025+ | 0.035 EUR |
| 4425+ | 0.016 EUR |
| 4975+ | 0.014 EUR |
| 5550+ | 0.013 EUR |
| 2SA812-M7 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA812-M5 |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.023 EUR |
| 15000+ | 0.021 EUR |
| 30000+ | 0.019 EUR |
| 60000+ | 0.018 EUR |
| 120000+ | 0.016 EUR |
| 300000+ | 0.014 EUR |
| 2SA812-M6 |
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.023 EUR |
| 15000+ | 0.021 EUR |
| 30000+ | 0.019 EUR |
| 60000+ | 0.018 EUR |
| 120000+ | 0.016 EUR |
| 300000+ | 0.014 EUR |
| 2SA812-M6 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Anzahl je Verpackung: 25 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 5550 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2025+ | 0.035 EUR |
| 4425+ | 0.016 EUR |
| 4975+ | 0.014 EUR |
| 5550+ | 0.013 EUR |
| 15000+ | 0.012 EUR |
| 2SB1188-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.07 EUR |
| 5000+ | 0.067 EUR |
| 10000+ | 0.063 EUR |
| 20000+ | 0.058 EUR |
| 40000+ | 0.053 EUR |
| 100000+ | 0.049 EUR |
| 2SB1188-R |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.063 EUR |
| 5000+ | 0.06 EUR |
| 10000+ | 0.056 EUR |
| 20000+ | 0.053 EUR |
| 40000+ | 0.048 EUR |
| 100000+ | 0.044 EUR |
| 2SB1197-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.058 EUR |
| 15000+ | 0.054 EUR |
| 30000+ | 0.051 EUR |
| 60000+ | 0.048 EUR |
| 120000+ | 0.043 EUR |
| 300000+ | 0.04 EUR |
| 2SB1198-R |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.2W; SOT23
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.5A
Collector-emitter voltage: 80V
Current gain: 180...390
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.2W; SOT23
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.5A
Collector-emitter voltage: 80V
Current gain: 180...390
Frequency: 180MHz
auf Bestellung 2830 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 645+ | 0.11 EUR |
| 1305+ | 0.055 EUR |
| 2480+ | 0.029 EUR |
| 2765+ | 0.026 EUR |
| 2SB1198-R |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.079 EUR |
| 15000+ | 0.076 EUR |
| 30000+ | 0.07 EUR |
| 60000+ | 0.067 EUR |
| 120000+ | 0.06 EUR |
| 300000+ | 0.056 EUR |
| 2SB1198-R |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.2W; SOT23
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.5A
Collector-emitter voltage: 80V
Current gain: 180...390
Frequency: 180MHz
Anzahl je Verpackung: 5 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.2W; SOT23
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.5A
Collector-emitter voltage: 80V
Current gain: 180...390
Frequency: 180MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2830 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 645+ | 0.11 EUR |
| 1305+ | 0.055 EUR |
| 2480+ | 0.029 EUR |
| 2765+ | 0.026 EUR |
| 3000+ | 0.024 EUR |
| 15000+ | 0.021 EUR |
| 2SB1198-RQ |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.095 EUR |
| 15000+ | 0.09 EUR |
| 30000+ | 0.084 EUR |
| 60000+ | 0.079 EUR |
| 120000+ | 0.072 EUR |
| 300000+ | 0.067 EUR |
| 2SC1623-L6 |
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.023 EUR |
| 15000+ | 0.021 EUR |
| 30000+ | 0.019 EUR |
| 60000+ | 0.018 EUR |
| 120000+ | 0.016 EUR |
| 300000+ | 0.014 EUR |
| 2SC2383P-O |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.14 EUR |
| 10000+ | 0.13 EUR |
| 20000+ | 0.12 EUR |
| 40000+ | 0.11 EUR |
| 100000+ | 0.1 EUR |
| 2SC2383P-Y |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.14 EUR |
| 10000+ | 0.13 EUR |
| 20000+ | 0.12 EUR |
| 40000+ | 0.11 EUR |
| 100000+ | 0.1 EUR |
| 2SC2412-Q |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
auf Bestellung 5850 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1700+ | 0.042 EUR |
| 3400+ | 0.021 EUR |
| 3775+ | 0.019 EUR |
| 4275+ | 0.017 EUR |
| 2SC2412-R |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
auf Bestellung 5650 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1650+ | 0.043 EUR |
| 3625+ | 0.02 EUR |
| 4050+ | 0.018 EUR |
| 4550+ | 0.016 EUR |







-Limited/MFG_4024_SOT-363.jpg)






