Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (2998) > Seite 50 nach 50
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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YJL2312A | Yangjie Technology |
Description: SOT-23 N 20V 6.8A Transistors F Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2312A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.4A Pulsed drain current: 27A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 39mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2312AL | Yangjie Technology |
Description: SOT-23 N 20V 7.6A Transistors F Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2312AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| YJL3400B | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 40A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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YJL3401A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -27A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 96mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1920 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL3401AL | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -27A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 96mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL3401AL | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3401AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3404AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| YJL3404B | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 40A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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YJL3407A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1670 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL3407AL | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2710 Stücke: Lieferzeit 14-21 Tag (e) |
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YJM04N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.2A Pulsed drain current: 16A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1360 Stücke: Lieferzeit 14-21 Tag (e) |
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YJM04N10A | Yangjie Technology | Description: SOT-223 N 100V 4A Transistors F |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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YJM05N06A | Yangjie Technology | Description: SOT-223 N 60V 5A Transistors FE |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ13N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ2012A | Yangjie Technology |
Description: DFN2020-6L N 20V 12A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ20N04A | Yangjie Technology |
Description: DFN(3.3x3.3) N 40V 20A Transist Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ20P03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ2301A | Yangjie Technology | Description: DFN2020-6L P -20V -4A Transisto |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ3400A | YANGJIE TECHNOLOGY |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A Type of transistor: N-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.2A Pulsed drain current: 30A Power dissipation: 2W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ35N04A | Yangjie Technology | Description: DFN(3.3x3.3) N 40V 35A Transist |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ35N04A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 120A Power dissipation: 40W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ4606A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ4666B | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -16V Drain current: -5.6A Pulsed drain current: -28A Power dissipation: 2.2W Case: DFN2020-6 Gate-source voltage: ±10V On-state resistance: 60mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ50N03A | Yangjie Technology |
Description: DFN(3.3x3.3) N 30V 50A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ50P03A | Yangjie Technology |
Description: DFN(3.3x3.3) P -30V -50A Transi Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ60N03A | Yangjie Technology |
Description: DFN(3.3x3.3) N 30V 60A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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| YJQD12N03A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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YJQD25N04A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJR20N06A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 495000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS03N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W Type of transistor: N-MOSFET Technology: TRENCH POWER HV Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 15A Power dissipation: 1.5W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJS03N10A | Yangjie Technology |
Description: SOT-23-6L N 100V 3A Transistors Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS05N06A | Yangjie Technology | Description: SOP-8 N 60V 5A Transistors FETs |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS12G06D | Yangjie Technology |
Description: SOP-8 N 60V 12A Transistors FET Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS12G10A | Yangjie Technology |
Description: SOP-8 N 100V 12A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS12N03A | Yangjie Technology |
Description: SOP-8 N 30V 12A Transistors FET Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS12N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A Type of transistor: N-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.6A Pulsed drain current: 120A Power dissipation: 3.3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJS18N03A | Yangjie Technology | Description: SOP-8 N 30V 18A Transistors FET |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS2301A | Yangjie Technology |
Description: SOT-23-6L P -20V -3.7A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS2301A | YANGJIE TECHNOLOGY |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A Type of transistor: P-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -16A Power dissipation: 1.3W Case: SOT23-6 Gate-source voltage: ±10V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
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YJS3404A | Yangjie Technology |
Description: SOP-8 N 30V 8.5A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS4407J | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS4409A | Yangjie Technology | Description: SOP-8 P -30V -18A Transistors F |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS4435A | Yangjie Technology |
Description: SOP-8 P -30V -10A Transistors F |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS4447B | Yangjie Technology | Description: SOP-8 P -30V -18A Transistors F |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS4606A | YANGJIE TECHNOLOGY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6/-5A Pulsed drain current: 24...-20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1787 Stücke: Lieferzeit 14-21 Tag (e) |
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YJS4606A | Yangjie Technology |
Description: SOP-8 N/P 30 -30V 6.0 -5.0A Tra Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS4953A | Yangjie Technology | Description: SOP-8 P -30V -5.1A Transistors |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS7328A | Yangjie Technology |
Description: SOP-8 P -30V -10A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS8205A | Yangjie Technology |
Description: SOT-23-6L N 20V 5.5A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS8205B | Yangjie Technology | Description: SOT-23-6L N 20V 7A Transistors |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS9435A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Pulsed drain current: -20A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJS9435A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJSD12N03A | YANGJIE TECHNOLOGY |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A Type of transistor: N-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.6A Pulsed drain current: 50A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 23.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 7235 Stücke: Lieferzeit 14-21 Tag (e) |
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YJSD12N03A | Yangjie Technology | Description: SOP-8 N 30V 12A Transistors FET |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZMM55C3V3 | Yangjie Technology |
Стабілітрон SMD, Uz, В = 3,3, Точн., % = 5, Тексп, °C = до 175,... Діоди Корпус: SOD-80 Од. вим: штAnzahl je Verpackung: 1000 Stücke |
verfügbar 2250 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| YJL2312A |
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 6.8A Transistors F
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 N 20V 6.8A Transistors F
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.062 EUR |
| 15000+ | 0.058 EUR |
| 30000+ | 0.055 EUR |
| 60000+ | 0.051 EUR |
| 120000+ | 0.046 EUR |
| 300000+ | 0.044 EUR |
| YJL2312A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1170+ | 0.061 EUR |
| 1300+ | 0.055 EUR |
| 1470+ | 0.049 EUR |
| YJL2312AL |
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 7.6A Transistors F
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 N 20V 7.6A Transistors F
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.079 EUR |
| 15000+ | 0.074 EUR |
| 30000+ | 0.07 EUR |
| 60000+ | 0.065 EUR |
| 120000+ | 0.058 EUR |
| 300000+ | 0.055 EUR |
| YJL2312AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: Transistors - FETs, MOSFETs - Si
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 60000+ | 0.093 EUR |
| 120000+ | 0.084 EUR |
| 300000+ | 0.077 EUR |
| YJL3400B |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 40A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 40A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| YJL3401A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1140+ | 0.064 EUR |
| 1260+ | 0.057 EUR |
| 1420+ | 0.051 EUR |
| YJL3401AL |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 450+ | 0.16 EUR |
| YJL3401AL |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.088 EUR |
| 15000+ | 0.083 EUR |
| 30000+ | 0.079 EUR |
| 60000+ | 0.074 EUR |
| 120000+ | 0.067 EUR |
| 300000+ | 0.062 EUR |
| YJL3401AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 60000+ | 0.093 EUR |
| 120000+ | 0.084 EUR |
| 300000+ | 0.077 EUR |
| YJL3404AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 15000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 60000+ | 0.097 EUR |
| 120000+ | 0.088 EUR |
| 300000+ | 0.081 EUR |
| YJL3404B |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 40A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 3.5A; 0.4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 40A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| YJL3407A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1670 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 138+ | 0.52 EUR |
| 275+ | 0.26 EUR |
| 550+ | 0.13 EUR |
| 785+ | 0.091 EUR |
| 981+ | 0.073 EUR |
| 1099+ | 0.065 EUR |
| 1309+ | 0.055 EUR |
| YJL3407AL |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2710 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 720+ | 0.1 EUR |
| 1140+ | 0.063 EUR |
| 1280+ | 0.056 EUR |
| YJM04N10A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1360 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 600+ | 0.12 EUR |
| 625+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| YJM04N10A |
Hersteller: Yangjie Technology
Description: SOT-223 N 100V 4A Transistors F
Description: SOT-223 N 100V 4A Transistors F
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.17 EUR |
| YJM05N06A |
Hersteller: Yangjie Technology
Description: SOT-223 N 60V 5A Transistors FE
Description: SOT-223 N 60V 5A Transistors FE
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.2 EUR |
| 12500+ | 0.19 EUR |
| 25000+ | 0.18 EUR |
| 50000+ | 0.17 EUR |
| 100000+ | 0.15 EUR |
| 250000+ | 0.14 EUR |
| YJQ13N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| 15000+ | 0.14 EUR |
| 30000+ | 0.13 EUR |
| 60000+ | 0.12 EUR |
| 120000+ | 0.11 EUR |
| 300000+ | 0.1 EUR |
| YJQ2012A |
Hersteller: Yangjie Technology
Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 15000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 60000+ | 0.099 EUR |
| 120000+ | 0.088 EUR |
| 300000+ | 0.081 EUR |
| YJQ20N04A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 40V 20A Transist
Part Status: Active
Packaging: Tape & Reel (TR)
Description: DFN(3.3x3.3) N 40V 20A Transist
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.23 EUR |
| 25000+ | 0.21 EUR |
| 50000+ | 0.2 EUR |
| 100000+ | 0.19 EUR |
| 200000+ | 0.17 EUR |
| 500000+ | 0.16 EUR |
| YJQ20P03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.25 EUR |
| 25000+ | 0.23 EUR |
| 50000+ | 0.22 EUR |
| 100000+ | 0.21 EUR |
| 200000+ | 0.19 EUR |
| 500000+ | 0.17 EUR |
| YJQ2301A |
Hersteller: Yangjie Technology
Description: DFN2020-6L P -20V -4A Transisto
Description: DFN2020-6L P -20V -4A Transisto
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| 15000+ | 0.14 EUR |
| 30000+ | 0.13 EUR |
| 60000+ | 0.12 EUR |
| 120000+ | 0.11 EUR |
| 300000+ | 0.1 EUR |
| YJQ3400A |
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Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 435+ | 0.16 EUR |
| YJQ35N04A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 40V 35A Transist
Description: DFN(3.3x3.3) N 40V 35A Transist
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| 25000+ | 0.3 EUR |
| 50000+ | 0.28 EUR |
| 100000+ | 0.26 EUR |
| 200000+ | 0.23 EUR |
| 500000+ | 0.22 EUR |
| YJQ35N04A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 275+ | 0.26 EUR |
| 305+ | 0.24 EUR |
| 345+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| YJQ4606A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.2 EUR |
| 25000+ | 0.19 EUR |
| 50000+ | 0.18 EUR |
| 100000+ | 0.17 EUR |
| 200000+ | 0.15 EUR |
| 500000+ | 0.14 EUR |
| YJQ4666B |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -5.6A
Pulsed drain current: -28A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -5.6A
Pulsed drain current: -28A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 910+ | 0.079 EUR |
| 1180+ | 0.061 EUR |
| 1290+ | 0.056 EUR |
| YJQ50N03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 30V 50A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 30V 50A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.3 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.27 EUR |
| 100000+ | 0.25 EUR |
| 200000+ | 0.23 EUR |
| 500000+ | 0.21 EUR |
| YJQ50P03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) P -30V -50A Transi
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) P -30V -50A Transi
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.6 EUR |
| 25000+ | 0.56 EUR |
| 50000+ | 0.53 EUR |
| 100000+ | 0.5 EUR |
| 200000+ | 0.45 EUR |
| 500000+ | 0.42 EUR |
| YJQ60N03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 30V 60A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 30V 60A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.49 EUR |
| 25000+ | 0.46 EUR |
| 50000+ | 0.43 EUR |
| 100000+ | 0.4 EUR |
| 200000+ | 0.36 EUR |
| 500000+ | 0.34 EUR |
| YJQD12N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJQD25N04A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| 25000+ | 0.3 EUR |
| 50000+ | 0.28 EUR |
| 100000+ | 0.26 EUR |
| 200000+ | 0.23 EUR |
| 500000+ | 0.22 EUR |
| YJR20N06A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 495000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4950+ | 0.25 EUR |
| 24750+ | 0.24 EUR |
| 49500+ | 0.22 EUR |
| 99000+ | 0.21 EUR |
| 198000+ | 0.19 EUR |
| 495000+ | 0.18 EUR |
| YJS03N10A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| YJS03N10A |
Hersteller: Yangjie Technology
Description: SOT-23-6L N 100V 3A Transistors
Part Status: Active
Packaging: Tape & Reel (TR)
Description: SOT-23-6L N 100V 3A Transistors
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 15000+ | 0.15 EUR |
| 30000+ | 0.14 EUR |
| 120000+ | 0.12 EUR |
| 300000+ | 0.11 EUR |
| YJS05N06A |
Hersteller: Yangjie Technology
Description: SOP-8 N 60V 5A Transistors FETs
Description: SOP-8 N 60V 5A Transistors FETs
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.26 EUR |
| 20000+ | 0.25 EUR |
| 40000+ | 0.23 EUR |
| 80000+ | 0.22 EUR |
| 160000+ | 0.2 EUR |
| 400000+ | 0.18 EUR |
| YJS12G06D |
Hersteller: Yangjie Technology
Description: SOP-8 N 60V 12A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOP-8 N 60V 12A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.47 EUR |
| 20000+ | 0.45 EUR |
| 40000+ | 0.42 EUR |
| 80000+ | 0.39 EUR |
| 160000+ | 0.35 EUR |
| 400000+ | 0.33 EUR |
| YJS12G10A |
Hersteller: Yangjie Technology
Description: SOP-8 N 100V 12A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOP-8 N 100V 12A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.43 EUR |
| 20000+ | 0.41 EUR |
| 40000+ | 0.38 EUR |
| 80000+ | 0.36 EUR |
| 160000+ | 0.32 EUR |
| 400000+ | 0.3 EUR |
| YJS12N03A |
Hersteller: Yangjie Technology
Description: SOP-8 N 30V 12A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOP-8 N 30V 12A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.17 EUR |
| 20000+ | 0.16 EUR |
| 40000+ | 0.15 EUR |
| 80000+ | 0.14 EUR |
| 160000+ | 0.13 EUR |
| 400000+ | 0.12 EUR |
| YJS12N10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJS18N03A |
Hersteller: Yangjie Technology
Description: SOP-8 N 30V 18A Transistors FET
Description: SOP-8 N 30V 18A Transistors FET
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.19 EUR |
| YJS2301A |
Hersteller: Yangjie Technology
Description: SOT-23-6L P -20V -3.7A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23-6L P -20V -3.7A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 15000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 60000+ | 0.099 EUR |
| 120000+ | 0.088 EUR |
| 300000+ | 0.081 EUR |
| YJS2301A |
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Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 770+ | 0.093 EUR |
| YJS3404A |
Hersteller: Yangjie Technology
Description: SOP-8 N 30V 8.5A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOP-8 N 30V 8.5A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.15 EUR |
| 20000+ | 0.14 EUR |
| 40000+ | 0.13 EUR |
| 80000+ | 0.12 EUR |
| 160000+ | 0.11 EUR |
| 400000+ | 0.1 EUR |
| YJS4407J |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.27 EUR |
| 20000+ | 0.25 EUR |
| 40000+ | 0.24 EUR |
| 80000+ | 0.22 EUR |
| 160000+ | 0.2 EUR |
| 400000+ | 0.18 EUR |
| YJS4409A |
Hersteller: Yangjie Technology
Description: SOP-8 P -30V -18A Transistors F
Description: SOP-8 P -30V -18A Transistors F
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.5 EUR |
| 20000+ | 0.47 EUR |
| 40000+ | 0.44 EUR |
| 80000+ | 0.41 EUR |
| 160000+ | 0.37 EUR |
| 400000+ | 0.35 EUR |
| YJS4435A |
![]() |
Hersteller: Yangjie Technology
Description: SOP-8 P -30V -10A Transistors F
Description: SOP-8 P -30V -10A Transistors F
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.17 EUR |
| 20000+ | 0.16 EUR |
| 40000+ | 0.15 EUR |
| 80000+ | 0.14 EUR |
| 160000+ | 0.12 EUR |
| YJS4447B |
Hersteller: Yangjie Technology
Description: SOP-8 P -30V -18A Transistors F
Description: SOP-8 P -30V -18A Transistors F
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.45 EUR |
| YJS4606A |
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-5A
Pulsed drain current: 24...-20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-5A
Pulsed drain current: 24...-20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1787 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 642+ | 0.11 EUR |
| 712+ | 0.1 EUR |
| 1000+ | 0.089 EUR |
| YJS4606A |
Hersteller: Yangjie Technology
Description: SOP-8 N/P 30 -30V 6.0 -5.0A Tra
Part Status: Active
Packaging: Tape & Reel (TR)
Description: SOP-8 N/P 30 -30V 6.0 -5.0A Tra
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.17 EUR |
| 20000+ | 0.16 EUR |
| 40000+ | 0.15 EUR |
| 80000+ | 0.14 EUR |
| 160000+ | 0.13 EUR |
| 400000+ | 0.12 EUR |
| YJS4953A |
Hersteller: Yangjie Technology
Description: SOP-8 P -30V -5.1A Transistors
Description: SOP-8 P -30V -5.1A Transistors
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.17 EUR |
| 20000+ | 0.16 EUR |
| 40000+ | 0.15 EUR |
| 80000+ | 0.14 EUR |
| 160000+ | 0.12 EUR |
| YJS7328A |
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Hersteller: Yangjie Technology
Description: SOP-8 P -30V -10A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOP-8 P -30V -10A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.29 EUR |
| 20000+ | 0.27 EUR |
| 40000+ | 0.26 EUR |
| 80000+ | 0.24 EUR |
| 160000+ | 0.22 EUR |
| 400000+ | 0.2 EUR |
| YJS8205A |
Hersteller: Yangjie Technology
Description: SOT-23-6L N 20V 5.5A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23-6L N 20V 5.5A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.099 EUR |
| 15000+ | 0.093 EUR |
| 30000+ | 0.088 EUR |
| 60000+ | 0.081 EUR |
| 120000+ | 0.074 EUR |
| 300000+ | 0.069 EUR |
| YJS8205B |
Hersteller: Yangjie Technology
Description: SOT-23-6L N 20V 7A Transistors
Description: SOT-23-6L N 20V 7A Transistors
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 15000+ | 0.1 EUR |
| 30000+ | 0.095 EUR |
| 60000+ | 0.09 EUR |
| 120000+ | 0.08 EUR |
| 300000+ | 0.074 EUR |
| YJS9435A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| YJS9435A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| 40000+ | 0.12 EUR |
| 160000+ | 0.11 EUR |
| 400000+ | 0.097 EUR |
| YJSD12N03A |
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Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.6A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.6A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7235 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 340+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| YJSD12N03A |
Hersteller: Yangjie Technology
Description: SOP-8 N 30V 12A Transistors FET
Description: SOP-8 N 30V 12A Transistors FET
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.26 EUR |
| 20000+ | 0.25 EUR |
| 40000+ | 0.24 EUR |
| 80000+ | 0.22 EUR |
| 160000+ | 0.2 EUR |
| 400000+ | 0.18 EUR |
| ZMM55C3V3 |
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Hersteller: Yangjie Technology
Стабілітрон SMD, Uz, В = 3,3, Точн., % = 5, Тексп, °C = до 175,... Діоди Корпус: SOD-80 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
Стабілітрон SMD, Uz, В = 3,3, Точн., % = 5, Тексп, °C = до 175,... Діоди Корпус: SOD-80 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
verfügbar 2250 Stücke:








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