Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (2999) > Seite 49 nach 50
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
YJ7N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
YJ7N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
YJ7N80CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Pulsed drain current: 28A Power dissipation: 49W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
YJA3134KA | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 1000000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJB150N06BQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| YJD112005PYG4 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; Ir: 5uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.9V Max. forward impulse current: 40A Leakage current: 5µA Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
YJD112010DG1 | Yangjie Technology |
Description: TO-252 1200V 16A Diodes Rectif Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD120N04A | Yangjie Technology |
Description: TO-252 N 40V 120A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD15N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
YJD15N10A | Yangjie Technology |
Description: TO-252 N 100V 15A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD180N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD20N06A | Yangjie Technology |
Description: TO-252 N 60V 20A Transistors FEPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD20N06A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 9360 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
YJD40N04A | Yangjie Technology | Description: TO-252 N 40V 40A Transistors FE |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD50N03A | Yangjie Technology |
Description: TO-252 N 30V 50A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| YJD50N06A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 200A Power dissipation: 21.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
YJD50N06A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD60N02A | Yangjie Technology |
Description: TO-252 N 20V 60A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD60N04A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 200A Power dissipation: 35W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
YJD60N04A | Yangjie Technology |
Description: TO-252 N 40V 60A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD80N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD80N03B | Yangjie Technology |
Description: TO-252 N 30V 80A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJD90N06A | Yangjie Technology |
Description: TO-252 N 60V 90A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG100N04A | Yangjie Technology |
Description: PDFN(5x6) N 40V 100A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG105N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG150N03A | Yangjie Technology |
Description: PDFN(5x6) N 30V 150A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG15GP10A | Yangjie Technology |
Description: PDFN(5x6) P -100V -15A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG20N06A | Yangjie Technology |
Description: PDFN(5x6) N 60V 20A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG30N06A | Yangjie Technology |
Description: PDFN(5x6) N 60V 30A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG40G10A | Yangjie Technology |
Description: PDFN 5x6 N 100V 40A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG40G10AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG40N03A | Yangjie Technology |
Description: PDFN(5x6) N 30V 40A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG40P03A | Yangjie Technology | Description: PDFN5060-8L P -30V -40A Transis |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJG50N03B | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJGD20G10A | Yangjie Technology | Description: DFN5060 N 100V 20A Transistors |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJH03N06A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJH03N06B | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJH03N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 12A Power dissipation: 4W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 6880 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
YJH03N10A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJH10N02A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJJ09N03A | Yangjie Technology |
Description: SOT-23-6L N 30V 9A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL03G10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 12A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.3nC |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
YJL03N04A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL03N06AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL03N06B | Yangjie Technology |
Description: SOT-23 N 60V 3A Transistors FETPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL05N04AQ | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL05N06AL | Yangjie Technology | Description: SOT-23 N 60V 5A Transistors FET |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL2300A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 49mΩ Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
YJL2301C | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Pulsed drain current: -14A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
YJL2301CQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL2301D | Yangjie Technology |
Description: SOT-23 P -19V -3.8A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 900000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL2301D | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -15V Drain current: -3A Pulsed drain current: -15A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 87mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
YJL2301F | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Pulsed drain current: -8A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1260 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
YJL2301G | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -15V Drain current: -1.6A Pulsed drain current: -8A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
YJL2301G | Yangjie Technology |
Description: SOT-23 P -19V -2A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL2301N | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL2302A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.5A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 37mΩ Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
YJL2302A | Yangjie Technology |
Description: SOT-23 N 20V 4.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
YJL2304A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.9A Pulsed drain current: 15A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
YJL2305A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -15V Drain current: -4.5A Pulsed drain current: -23A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 62mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1860 Stücke: Lieferzeit 14-21 Tag (e) |
|
| YJ7N60CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ7N65CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ7N80CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJA3134KA |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 1000000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.042 EUR |
| 50000+ | 0.04 EUR |
| 100000+ | 0.037 EUR |
| 200000+ | 0.035 EUR |
| 400000+ | 0.032 EUR |
| 1000000+ | 0.03 EUR |
| YJB150N06BQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 1.17 EUR |
| 4000+ | 1.1 EUR |
| 8000+ | 1.04 EUR |
| 16000+ | 0.97 EUR |
| 32000+ | 0.88 EUR |
| 80000+ | 0.81 EUR |
| YJD112005PYG4 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.9V
Max. forward impulse current: 40A
Leakage current: 5µA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.9V
Max. forward impulse current: 40A
Leakage current: 5µA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJD112010DG1 |
Hersteller: Yangjie Technology
Description: TO-252 1200V 16A Diodes Rectif
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 1200V 16A Diodes Rectif
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 9.35 EUR |
| 12500+ | 8.83 EUR |
| 25000+ | 8.31 EUR |
| 50000+ | 7.79 EUR |
| 100000+ | 7.01 EUR |
| 250000+ | 6.49 EUR |
| YJD120N04A |
Hersteller: Yangjie Technology
Description: TO-252 N 40V 120A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 40V 120A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.6 EUR |
| 12500+ | 0.56 EUR |
| 25000+ | 0.53 EUR |
| 50000+ | 0.5 EUR |
| 100000+ | 0.45 EUR |
| 250000+ | 0.42 EUR |
| YJD15N10A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| YJD15N10A |
Hersteller: Yangjie Technology
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 12500+ | 0.32 EUR |
| 25000+ | 0.3 EUR |
| 50000+ | 0.28 EUR |
| 100000+ | 0.25 EUR |
| 250000+ | 0.23 EUR |
| YJD180N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.6 EUR |
| 12500+ | 0.56 EUR |
| 25000+ | 0.53 EUR |
| 50000+ | 0.5 EUR |
| 100000+ | 0.45 EUR |
| 250000+ | 0.42 EUR |
| YJD20N06A |
![]() |
Hersteller: Yangjie Technology
Description: TO-252 N 60V 20A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 60V 20A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 12500+ | 0.31 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.27 EUR |
| 100000+ | 0.25 EUR |
| 250000+ | 0.23 EUR |
| YJD20N06A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 9360 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 220+ | 0.33 EUR |
| 260+ | 0.28 EUR |
| 290+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 2500+ | 0.2 EUR |
| YJD40N04A |
Hersteller: Yangjie Technology
Description: TO-252 N 40V 40A Transistors FE
Description: TO-252 N 40V 40A Transistors FE
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.25 EUR |
| 12500+ | 0.23 EUR |
| 25000+ | 0.22 EUR |
| 50000+ | 0.21 EUR |
| 100000+ | 0.19 EUR |
| 250000+ | 0.17 EUR |
| YJD50N03A |
Hersteller: Yangjie Technology
Description: TO-252 N 30V 50A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 30V 50A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.32 EUR |
| 12500+ | 0.31 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.27 EUR |
| 100000+ | 0.24 EUR |
| 250000+ | 0.23 EUR |
| YJD50N06A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 21.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 21.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJD50N06A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.43 EUR |
| 12500+ | 0.41 EUR |
| 25000+ | 0.39 EUR |
| 50000+ | 0.36 EUR |
| 100000+ | 0.33 EUR |
| 250000+ | 0.3 EUR |
| YJD60N02A |
Hersteller: Yangjie Technology
Description: TO-252 N 20V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 20V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.29 EUR |
| 12500+ | 0.28 EUR |
| 25000+ | 0.26 EUR |
| 50000+ | 0.24 EUR |
| 100000+ | 0.22 EUR |
| 250000+ | 0.2 EUR |
| YJD60N04A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJD60N04A |
Hersteller: Yangjie Technology
Description: TO-252 N 40V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 40V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 12500+ | 0.31 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.27 EUR |
| 100000+ | 0.25 EUR |
| 250000+ | 0.23 EUR |
| YJD80N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.41 EUR |
| 12500+ | 0.39 EUR |
| 25000+ | 0.37 EUR |
| 50000+ | 0.34 EUR |
| 100000+ | 0.31 EUR |
| 250000+ | 0.29 EUR |
| YJD80N03B |
Hersteller: Yangjie Technology
Description: TO-252 N 30V 80A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 30V 80A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.29 EUR |
| 12500+ | 0.28 EUR |
| 25000+ | 0.26 EUR |
| 50000+ | 0.24 EUR |
| 100000+ | 0.22 EUR |
| 250000+ | 0.2 EUR |
| YJD90N06A |
Hersteller: Yangjie Technology
Description: TO-252 N 60V 90A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 60V 90A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.57 EUR |
| 12500+ | 0.54 EUR |
| 25000+ | 0.51 EUR |
| 50000+ | 0.48 EUR |
| 100000+ | 0.43 EUR |
| 250000+ | 0.4 EUR |
| YJG100N04A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 40V 100A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 40V 100A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.5 EUR |
| 25000+ | 0.47 EUR |
| 50000+ | 0.45 EUR |
| 100000+ | 0.42 EUR |
| 200000+ | 0.37 EUR |
| 500000+ | 0.35 EUR |
| YJG105N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.41 EUR |
| 25000+ | 0.39 EUR |
| 50000+ | 0.37 EUR |
| 100000+ | 0.34 EUR |
| 200000+ | 0.31 EUR |
| 500000+ | 0.29 EUR |
| YJG150N03A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 30V 150A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 30V 150A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.52 EUR |
| 25000+ | 0.49 EUR |
| 50000+ | 0.46 EUR |
| 100000+ | 0.43 EUR |
| 200000+ | 0.39 EUR |
| 500000+ | 0.36 EUR |
| YJG15GP10A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) P -100V -15A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) P -100V -15A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.48 EUR |
| 25000+ | 0.45 EUR |
| 50000+ | 0.43 EUR |
| 100000+ | 0.4 EUR |
| 200000+ | 0.36 EUR |
| 500000+ | 0.33 EUR |
| YJG20N06A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 60V 20A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 60V 20A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.25 EUR |
| 25000+ | 0.24 EUR |
| 50000+ | 0.22 EUR |
| 100000+ | 0.21 EUR |
| 200000+ | 0.19 EUR |
| 500000+ | 0.17 EUR |
| YJG30N06A |
![]() |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 60V 30A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 60V 30A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.32 EUR |
| 25000+ | 0.31 EUR |
| 50000+ | 0.29 EUR |
| 100000+ | 0.27 EUR |
| 200000+ | 0.24 EUR |
| 500000+ | 0.23 EUR |
| YJG40G10A |
Hersteller: Yangjie Technology
Description: PDFN 5x6 N 100V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN 5x6 N 100V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.45 EUR |
| 25000+ | 0.42 EUR |
| 50000+ | 0.4 EUR |
| 100000+ | 0.37 EUR |
| 200000+ | 0.33 EUR |
| 500000+ | 0.31 EUR |
| YJG40G10AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.88 EUR |
| 25000+ | 0.83 EUR |
| 50000+ | 0.78 EUR |
| 100000+ | 0.74 EUR |
| 200000+ | 0.66 EUR |
| 500000+ | 0.61 EUR |
| YJG40N03A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 30V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 30V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.26 EUR |
| 25000+ | 0.25 EUR |
| 50000+ | 0.23 EUR |
| 100000+ | 0.22 EUR |
| 200000+ | 0.2 EUR |
| 500000+ | 0.18 EUR |
| YJG40P03A |
Hersteller: Yangjie Technology
Description: PDFN5060-8L P -30V -40A Transis
Description: PDFN5060-8L P -30V -40A Transis
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.28 EUR |
| 100000+ | 0.26 EUR |
| 200000+ | 0.23 EUR |
| 500000+ | 0.22 EUR |
| YJG50N03B |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.29 EUR |
| 25000+ | 0.28 EUR |
| 50000+ | 0.26 EUR |
| 100000+ | 0.24 EUR |
| 200000+ | 0.22 EUR |
| 500000+ | 0.2 EUR |
| YJGD20G10A |
Hersteller: Yangjie Technology
Description: DFN5060 N 100V 20A Transistors
Description: DFN5060 N 100V 20A Transistors
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.84 EUR |
| 25000+ | 0.8 EUR |
| 50000+ | 0.75 EUR |
| 100000+ | 0.7 EUR |
| 200000+ | 0.63 EUR |
| 500000+ | 0.59 EUR |
| YJH03N06A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.092 EUR |
| 5000+ | 0.087 EUR |
| 10000+ | 0.082 EUR |
| 20000+ | 0.077 EUR |
| 40000+ | 0.069 EUR |
| 100000+ | 0.064 EUR |
| YJH03N06B |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.092 EUR |
| 5000+ | 0.087 EUR |
| 10000+ | 0.082 EUR |
| 20000+ | 0.077 EUR |
| 40000+ | 0.069 EUR |
| 100000+ | 0.064 EUR |
| YJH03N10A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 4W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 4W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 405+ | 0.18 EUR |
| 575+ | 0.12 EUR |
| 645+ | 0.11 EUR |
| 3000+ | 0.099 EUR |
| YJH03N10A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.16 EUR |
| 5000+ | 0.15 EUR |
| 10000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| 40000+ | 0.12 EUR |
| 100000+ | 0.11 EUR |
| YJH10N02A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.16 EUR |
| 5000+ | 0.15 EUR |
| 10000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| 40000+ | 0.12 EUR |
| 100000+ | 0.11 EUR |
| YJJ09N03A |
![]() |
Hersteller: Yangjie Technology
Description: SOT-23-6L N 30V 9A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23-6L N 30V 9A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| 15000+ | 0.14 EUR |
| 60000+ | 0.13 EUR |
| 120000+ | 0.11 EUR |
| YJL03G10A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 12A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 12A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| YJL03N04A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.053 EUR |
| 15000+ | 0.049 EUR |
| 30000+ | 0.046 EUR |
| 60000+ | 0.044 EUR |
| 120000+ | 0.039 EUR |
| 300000+ | 0.037 EUR |
| YJL03N06AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 60000+ | 0.093 EUR |
| 120000+ | 0.084 EUR |
| 300000+ | 0.077 EUR |
| YJL03N06B |
![]() |
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 3A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 3A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.059 EUR |
| 15000+ | 0.056 EUR |
| 30000+ | 0.053 EUR |
| 60000+ | 0.049 EUR |
| 120000+ | 0.044 EUR |
| 300000+ | 0.041 EUR |
| YJL05N04AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.085 EUR |
| 15000+ | 0.081 EUR |
| 30000+ | 0.076 EUR |
| 60000+ | 0.071 EUR |
| 120000+ | 0.065 EUR |
| 300000+ | 0.059 EUR |
| YJL05N06AL |
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 5A Transistors FET
Description: SOT-23 N 60V 5A Transistors FET
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 30000+ | 0.12 EUR |
| 60000+ | 0.11 EUR |
| 120000+ | 0.1 EUR |
| 300000+ | 0.092 EUR |
| YJL2300A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJL2301C |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 210+ | 0.34 EUR |
| YJL2301CQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
| 15000+ | 0.097 EUR |
| 30000+ | 0.092 EUR |
| 60000+ | 0.086 EUR |
| 120000+ | 0.077 EUR |
| 300000+ | 0.072 EUR |
| YJL2301D |
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 900000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.058 EUR |
| 15000+ | 0.056 EUR |
| 30000+ | 0.053 EUR |
| 60000+ | 0.049 EUR |
| 120000+ | 0.044 EUR |
| 300000+ | 0.04 EUR |
| 600000+ | 0.033 EUR |
| YJL2301D |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 740+ | 0.097 EUR |
| YJL2301F |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1260 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1080+ | 0.066 EUR |
| 1260+ | 0.057 EUR |
| YJL2301G |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJL2301G |
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| 15000+ | 0.04 EUR |
| 30000+ | 0.037 EUR |
| 60000+ | 0.035 EUR |
| 120000+ | 0.032 EUR |
| 300000+ | 0.03 EUR |
| YJL2301N |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.039 EUR |
| 15000+ | 0.037 EUR |
| 30000+ | 0.033 EUR |
| 60000+ | 0.032 EUR |
| 120000+ | 0.028 EUR |
| 300000+ | 0.026 EUR |
| YJL2302A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJL2302A |
![]() |
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 4.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 20V 4.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.048 EUR |
| 15000+ | 0.044 EUR |
| 30000+ | 0.042 EUR |
| 60000+ | 0.039 EUR |
| 120000+ | 0.035 EUR |
| 300000+ | 0.033 EUR |
| YJL2304A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJL2305A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1090+ | 0.066 EUR |
| 1440+ | 0.05 EUR |
| 1620+ | 0.044 EUR |















