Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (3027) > Seite 3 nach 51
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1N4005G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.1V Case: DO41 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Kind of package: tape |
auf Bestellung 4988 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4005GS | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 30A; A405; Ufmax: 1.1V Case: A405 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Kind of package: tape |
auf Bestellung 4965 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4006 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4006G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4006GS | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; A405; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Case: A405 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4007 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1V; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Reverse recovery time: 2µs |
auf Bestellung 6761 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4007G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 3597 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4007GS | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; A405; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Case: A405 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 10826 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4148 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 0.3A; tape; Ifsm: 2A; DO35; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 2A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 8ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| 1N4148W | YANGJIE TECHNOLOGY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD123; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1N4148WQ | Yangjie Technology |
Description: SOD-123 75V 0.15A Diodes RectiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4148WSL | Yangjie Technology |
Description: Diodes - Rectifiers - Single SODPart Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4148WSQ | Yangjie Technology |
Description: SOD-323 75V 0.15A Diodes RectiPart Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4148WTQ | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOD Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 800000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4448WQ | Yangjie Technology |
Description: Diodes - Rectifiers - Single SODPart Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4448WS | YANGJIE TECHNOLOGY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.5A; 4ns; SOD323; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4448WSQ | Yangjie Technology |
Description: Diodes - Rectifiers - Single SODPart Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5400 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5400G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5401 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5401G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5402 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5402G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 2295 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5404 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 0.4kV Case: DO27 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape |
auf Bestellung 1109 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5404G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.4kV Case: DO27 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape |
auf Bestellung 3667 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5406 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5406G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5407 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
auf Bestellung 941 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5407G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5408 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Mounting: THT Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 1kV Kind of package: tape Case: DO27 Type of diode: rectifying Semiconductor structure: single diode |
auf Bestellung 1039 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Mounting: THT Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: tape Case: DO27 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode |
auf Bestellung 3329 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5819 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V Kind of package: tape |
auf Bestellung 361 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5822 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: tape |
auf Bestellung 5146 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5822 | Yangjie Technology |
Діод Шотткі вивідний, Io, A = 3, Uзвор, В = 40, If, А = 3, Тексп, °C = -55...+125,... Група товару: Діоди Корпус: DO-27 Од. вим: штAnzahl je Verpackung: 1000 Stücke |
verfügbar 30 Stücke: |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1SS355Q | Yangjie Technology |
Description: SOD-323 80V 0.15A Diodes RectiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002 | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N7002K | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Technology: TRENCH POWER MV Pulsed drain current: 1.5A Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N7002KC | Yangjie Technology |
Description: SOT-23 N 60V 0.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCDW | Yangjie Technology |
Description: SOT-363 N 60V 0.3A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCDWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCE | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCQ | Yangjie Technology |
Description: SOT-23 N 60V 0.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCW | Yangjie Technology |
Description: SOT-323 N 60V 0.3A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCX | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1037-Q | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of transistor: PNP Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 120...270 Application: automotive industry Polarisation: bipolar |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1037-R | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 180...390 Kind of package: reel; tape Polarisation: bipolar Case: SOT23 |
Produkt ist nicht verfügbar |
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2SA1037-S | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 270...560 Kind of package: reel; tape Polarisation: bipolar Case: SOT23 |
Produkt ist nicht verfügbar |
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2SA1037-Q | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1037-S | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1576A-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1576A-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1576A-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA812-M5 | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA812-M6 | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A -60V Trans Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1188-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1188-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1197-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1198-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1198-RQ | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1N4005G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.1V
Case: DO41
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.1V
Case: DO41
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: tape
auf Bestellung 4988 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 337+ | 0.21 EUR |
| 463+ | 0.15 EUR |
| 721+ | 0.099 EUR |
| 1047+ | 0.068 EUR |
| 1645+ | 0.043 EUR |
| 1N4005GS |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 30A; A405; Ufmax: 1.1V
Case: A405
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 30A; A405; Ufmax: 1.1V
Case: A405
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: tape
auf Bestellung 4965 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 381+ | 0.19 EUR |
| 515+ | 0.14 EUR |
| 808+ | 0.089 EUR |
| 1174+ | 0.061 EUR |
| 1846+ | 0.039 EUR |
| 1N4006 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4006G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4006GS |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; A405; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: A405
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; A405; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: A405
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4007 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 2µs
auf Bestellung 6761 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 293+ | 0.24 EUR |
| 397+ | 0.18 EUR |
| 624+ | 0.11 EUR |
| 906+ | 0.079 EUR |
| 1421+ | 0.05 EUR |
| 5000+ | 0.03 EUR |
| 1N4007G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 3597 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 262+ | 0.27 EUR |
| 356+ | 0.2 EUR |
| 557+ | 0.13 EUR |
| 810+ | 0.088 EUR |
| 1273+ | 0.056 EUR |
| 1N4007GS |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; A405; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: A405
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; A405; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: A405
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 10826 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 782+ | 0.092 EUR |
| 1132+ | 0.063 EUR |
| 1780+ | 0.04 EUR |
| 5000+ | 0.024 EUR |
| 1N4148 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 0.3A; tape; Ifsm: 2A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 8ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 0.3A; tape; Ifsm: 2A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 8ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4148W |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4148WQ |
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Hersteller: Yangjie Technology
Description: SOD-123 75V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOD-123 75V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.032 EUR |
| 15000+ | 0.03 EUR |
| 30000+ | 0.028 EUR |
| 60000+ | 0.026 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 1N4148WSL |
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Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOD
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Diodes - Rectifiers - Single SOD
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.03 EUR |
| 15000+ | 0.028 EUR |
| 30000+ | 0.026 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 1N4148WSQ |
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Hersteller: Yangjie Technology
Description: SOD-323 75V 0.15A Diodes Recti
Part Status: Active
Packaging: Tape & Reel (TR)
Description: SOD-323 75V 0.15A Diodes Recti
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.051 EUR |
| 15000+ | 0.048 EUR |
| 30000+ | 0.044 EUR |
| 60000+ | 0.042 EUR |
| 120000+ | 0.039 EUR |
| 300000+ | 0.035 EUR |
| 1N4148WTQ |
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOD
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Diodes - Rectifiers - Single SOD
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 800000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.033 EUR |
| 40000+ | 0.032 EUR |
| 80000+ | 0.03 EUR |
| 160000+ | 0.028 EUR |
| 320000+ | 0.025 EUR |
| 800000+ | 0.023 EUR |
| 1N4448WQ |
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Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOD
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Diodes - Rectifiers - Single SOD
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.033 EUR |
| 15000+ | 0.032 EUR |
| 30000+ | 0.03 EUR |
| 60000+ | 0.028 EUR |
| 120000+ | 0.025 EUR |
| 300000+ | 0.023 EUR |
| 1N4448WS |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 4ns; SOD323; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 4ns; SOD323; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 365+ | 0.2 EUR |
| 1N4448WSQ |
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Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOD
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Diodes - Rectifiers - Single SOD
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.032 EUR |
| 15000+ | 0.03 EUR |
| 30000+ | 0.028 EUR |
| 60000+ | 0.026 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 1N5400 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5400G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5401 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5401G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5402 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5402G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 2295 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.25 EUR |
| 77+ | 0.93 EUR |
| 209+ | 0.34 EUR |
| 256+ | 0.28 EUR |
| 327+ | 0.22 EUR |
| 410+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1250+ | 0.13 EUR |
| 1N5404 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
auf Bestellung 1109 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 111+ | 0.65 EUR |
| 302+ | 0.24 EUR |
| 368+ | 0.19 EUR |
| 472+ | 0.15 EUR |
| 589+ | 0.12 EUR |
| 658+ | 0.11 EUR |
| 1N5404G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
auf Bestellung 3667 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 93+ | 0.77 EUR |
| 253+ | 0.28 EUR |
| 309+ | 0.23 EUR |
| 397+ | 0.18 EUR |
| 496+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| 1250+ | 0.11 EUR |
| 2500+ | 0.097 EUR |
| 1N5406 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5406G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5407 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
auf Bestellung 941 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 136+ | 0.53 EUR |
| 368+ | 0.19 EUR |
| 451+ | 0.16 EUR |
| 575+ | 0.12 EUR |
| 725+ | 0.099 EUR |
| 807+ | 0.089 EUR |
| 1N5407G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5408 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1039 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 108+ | 0.67 EUR |
| 293+ | 0.24 EUR |
| 358+ | 0.2 EUR |
| 459+ | 0.16 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 1N5408G |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 3329 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 92+ | 0.78 EUR |
| 250+ | 0.29 EUR |
| 305+ | 0.23 EUR |
| 394+ | 0.18 EUR |
| 491+ | 0.15 EUR |
| 550+ | 0.13 EUR |
| 1250+ | 0.11 EUR |
| 2500+ | 0.097 EUR |
| 1N5819 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
auf Bestellung 361 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 361+ | 0.2 EUR |
| 1N5822 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
auf Bestellung 5146 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 303+ | 0.24 EUR |
| 431+ | 0.17 EUR |
| 604+ | 0.12 EUR |
| 1250+ | 0.09 EUR |
| 2500+ | 0.083 EUR |
| 5000+ | 0.079 EUR |
| 1N5822 |
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Hersteller: Yangjie Technology
Діод Шотткі вивідний, Io, A = 3, Uзвор, В = 40, If, А = 3, Тексп, °C = -55...+125,... Група товару: Діоди Корпус: DO-27 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
Діод Шотткі вивідний, Io, A = 3, Uзвор, В = 40, If, А = 3, Тексп, °C = -55...+125,... Група товару: Діоди Корпус: DO-27 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
verfügbar 30 Stücke:
Im Einkaufswagen
Stück im Wert von UAH
| 1SS355Q |
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Hersteller: Yangjie Technology
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.028 EUR |
| 15000+ | 0.026 EUR |
| 30000+ | 0.025 EUR |
| 60000+ | 0.023 EUR |
| 120000+ | 0.021 EUR |
| 300000+ | 0.019 EUR |
| 2N7002 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002K |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Pulsed drain current: 1.5A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Pulsed drain current: 1.5A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002KC |
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Hersteller: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.028 EUR |
| 15000+ | 0.026 EUR |
| 30000+ | 0.025 EUR |
| 60000+ | 0.023 EUR |
| 120000+ | 0.021 EUR |
| 300000+ | 0.019 EUR |
| 2N7002KCDW |
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Hersteller: Yangjie Technology
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.048 EUR |
| 15000+ | 0.044 EUR |
| 30000+ | 0.042 EUR |
| 60000+ | 0.039 EUR |
| 120000+ | 0.035 EUR |
| 300000+ | 0.032 EUR |
| 2N7002KCDWQ |
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Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.074 EUR |
| 15000+ | 0.07 EUR |
| 30000+ | 0.067 EUR |
| 60000+ | 0.062 EUR |
| 120000+ | 0.056 EUR |
| 300000+ | 0.051 EUR |
| 2N7002KCE |
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Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.03 EUR |
| 60000+ | 0.028 EUR |
| 120000+ | 0.026 EUR |
| 300000+ | 0.025 EUR |
| 2N7002KCQ |
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Hersteller: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.058 EUR |
| 15000+ | 0.055 EUR |
| 30000+ | 0.051 EUR |
| 60000+ | 0.048 EUR |
| 120000+ | 0.044 EUR |
| 300000+ | 0.04 EUR |
| 2N7002KCW |
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Hersteller: Yangjie Technology
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.033 EUR |
| 15000+ | 0.032 EUR |
| 30000+ | 0.03 EUR |
| 60000+ | 0.028 EUR |
| 120000+ | 0.025 EUR |
| 300000+ | 0.023 EUR |
| 2N7002KCWQ |
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Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.065 EUR |
| 15000+ | 0.062 EUR |
| 30000+ | 0.058 EUR |
| 60000+ | 0.055 EUR |
| 120000+ | 0.048 EUR |
| 300000+ | 0.044 EUR |
| 2N7002KCX |
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Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.055 EUR |
| 15000+ | 0.051 EUR |
| 30000+ | 0.048 EUR |
| 60000+ | 0.046 EUR |
| 120000+ | 0.04 EUR |
| 300000+ | 0.037 EUR |
| 2SA1037-Q |
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Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Application: automotive industry
Polarisation: bipolar
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1100+ | 0.064 EUR |
| 2SA1037-R |
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Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1037-S |
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Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 270...560
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 270...560
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1037-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.026 EUR |
| 15000+ | 0.024 EUR |
| 30000+ | 0.023 EUR |
| 60000+ | 0.021 EUR |
| 120000+ | 0.019 EUR |
| 300000+ | 0.018 EUR |
| 2SA1037-S |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.024 EUR |
| 15000+ | 0.023 EUR |
| 30000+ | 0.021 EUR |
| 60000+ | 0.019 EUR |
| 120000+ | 0.018 EUR |
| 300000+ | 0.016 EUR |
| 2SA1576A-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.033 EUR |
| 15000+ | 0.032 EUR |
| 30000+ | 0.03 EUR |
| 60000+ | 0.026 EUR |
| 120000+ | 0.025 EUR |
| 300000+ | 0.023 EUR |
| 2SA1576A-R |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.03 EUR |
| 15000+ | 0.028 EUR |
| 30000+ | 0.026 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SA1576A-S |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.03 EUR |
| 15000+ | 0.028 EUR |
| 30000+ | 0.026 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SA812-M5 |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.023 EUR |
| 15000+ | 0.021 EUR |
| 30000+ | 0.019 EUR |
| 60000+ | 0.018 EUR |
| 120000+ | 0.016 EUR |
| 300000+ | 0.014 EUR |
| 2SA812-M6 |
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.023 EUR |
| 15000+ | 0.021 EUR |
| 30000+ | 0.019 EUR |
| 60000+ | 0.018 EUR |
| 120000+ | 0.016 EUR |
| 300000+ | 0.014 EUR |
| 2SB1188-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.07 EUR |
| 5000+ | 0.067 EUR |
| 10000+ | 0.063 EUR |
| 20000+ | 0.058 EUR |
| 40000+ | 0.053 EUR |
| 100000+ | 0.049 EUR |
| 2SB1188-R |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.063 EUR |
| 5000+ | 0.06 EUR |
| 10000+ | 0.056 EUR |
| 20000+ | 0.053 EUR |
| 40000+ | 0.048 EUR |
| 100000+ | 0.044 EUR |
| 2SB1197-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.058 EUR |
| 15000+ | 0.054 EUR |
| 30000+ | 0.051 EUR |
| 60000+ | 0.048 EUR |
| 120000+ | 0.043 EUR |
| 300000+ | 0.04 EUR |
| 2SB1198-R |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.079 EUR |
| 15000+ | 0.076 EUR |
| 30000+ | 0.07 EUR |
| 60000+ | 0.067 EUR |
| 120000+ | 0.06 EUR |
| 300000+ | 0.056 EUR |
| 2SB1198-RQ |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.095 EUR |
| 15000+ | 0.09 EUR |
| 30000+ | 0.084 EUR |
| 60000+ | 0.079 EUR |
| 120000+ | 0.072 EUR |
| 300000+ | 0.067 EUR |










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