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1N5402 1N5402 YANGJIE TECHNOLOGY 1N5400_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
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1N5402G 1N5402G YANGJIE TECHNOLOGY 1N5400G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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1N5404 1N5404 YANGJIE TECHNOLOGY 1N5400_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
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1N5404G 1N5404G YANGJIE TECHNOLOGY 1N5400G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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1N5406 1N5406 YANGJIE TECHNOLOGY 1N5400_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
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1N5407 1N5407 YANGJIE TECHNOLOGY 1N5400_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
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1N5408 1N5408 YANGJIE TECHNOLOGY 1N5400_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
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1N5408G 1N5408G YANGJIE TECHNOLOGY 1N5400G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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1N5819 1N5819 YANGJIE TECHNOLOGY 1N581x_ser.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: tape
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
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1N5822 Yangjie Technology 1N582x_Yangjie.pdf Діод Шотткі вивідний, Io, A = 3, Uзвор, В = 40, If, А = 3, Тексп, °C = -55...+125,... Діоди Корпус: DO-27 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
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1SS355Q 1SS355Q Yangjie Technology 1SS355Q.pdf Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
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2N7002 2N7002 YANGJIE TECHNOLOGY 2N7002.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Technology: TRENCH POWER MV
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2N7002K 2N7002K YANGJIE TECHNOLOGY 2N7002K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.5A
Version: ESD
Technology: TRENCH POWER MV
Produkt ist nicht verfügbar
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2N7002KC 2N7002KC Yangjie Technology 2N7002KC.pdf Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
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2N7002KCDW 2N7002KCDW Yangjie Technology 2N7002KCDW.pdf Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
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60000+0.046 EUR
120000+0.042 EUR
300000+0.038 EUR
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2N7002KCDWQ 2N7002KCDWQ Yangjie Technology 2N7002KCDWQ.pdf Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
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30000+0.08 EUR
60000+0.074 EUR
120000+0.067 EUR
300000+0.061 EUR
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2N7002KCE 2N7002KCE Yangjie Technology 2N7002KCE.pdf Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
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300000+0.03 EUR
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2N7002KCQ 2N7002KCQ Yangjie Technology 2N7002KCQ.pdf Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
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2N7002KCW 2N7002KCW Yangjie Technology 2N7002KCW.pdf Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
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300000+0.027 EUR
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2N7002KCWQ 2N7002KCWQ Yangjie Technology 2N7002KCWQ.pdf Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
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15000+0.074 EUR
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120000+0.057 EUR
300000+0.052 EUR
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2N7002KCX 2N7002KCX Yangjie Technology 2N7002KCX.pdf Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
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300000+0.044 EUR
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2N7002W 2N7002W YANGJIE TECHNOLOGY 2N7002W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 25 Stücke
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2SA1037-Q 2SA1037-Q Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
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15000+0.029 EUR
30000+0.027 EUR
60000+0.025 EUR
120000+0.023 EUR
300000+0.021 EUR
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2SA1037-Q 2SA1037-Q YANGJIE TECHNOLOGY 2SA1037.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
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2SA1037-S 2SA1037-S Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
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15000+0.027 EUR
30000+0.025 EUR
60000+0.023 EUR
120000+0.021 EUR
300000+0.019 EUR
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2SA1576A-Q 2SA1576A-Q Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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30000+0.036 EUR
60000+0.031 EUR
120000+0.03 EUR
300000+0.027 EUR
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2SA1576A-R 2SA1576A-R Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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15000+0.033 EUR
30000+0.031 EUR
60000+0.03 EUR
120000+0.027 EUR
300000+0.025 EUR
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2SA1576A-S 2SA1576A-S Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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3000+0.036 EUR
15000+0.033 EUR
30000+0.031 EUR
60000+0.03 EUR
120000+0.027 EUR
300000+0.025 EUR
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2SA812-M5 2SA812-M5 Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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15000+0.025 EUR
30000+0.023 EUR
60000+0.021 EUR
120000+0.019 EUR
300000+0.017 EUR
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2SA812-M6 2SA812-M6 Yangjie Technology Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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15000+0.025 EUR
30000+0.023 EUR
60000+0.021 EUR
120000+0.019 EUR
300000+0.017 EUR
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2SB1188-Q 2SB1188-Q Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
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1000+0.083 EUR
5000+0.08 EUR
10000+0.075 EUR
20000+0.069 EUR
40000+0.063 EUR
100000+0.058 EUR
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2SB1197-Q 2SB1197-Q Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
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3000+0.069 EUR
15000+0.064 EUR
30000+0.061 EUR
60000+0.057 EUR
120000+0.051 EUR
300000+0.048 EUR
Mindestbestellmenge: 3000 Stücke
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2SB1198-R 2SB1198-R Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
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3000+0.094 EUR
15000+0.09 EUR
30000+0.083 EUR
60000+0.08 EUR
120000+0.071 EUR
300000+0.067 EUR
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2SB1198-RQ 2SB1198-RQ Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
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3000+0.11 EUR
15000+0.11 EUR
30000+0.1 EUR
60000+0.094 EUR
120000+0.086 EUR
300000+0.08 EUR
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2SC1623-L6 Yangjie Technology Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
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3000+0.027 EUR
15000+0.025 EUR
30000+0.023 EUR
60000+0.021 EUR
120000+0.019 EUR
300000+0.017 EUR
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2SC2383P-O 2SC2383P-O Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SC2383P-Y 2SC2383P-Y Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SC2412-Q 2SC2412-Q YANGJIE TECHNOLOGY 2SC2412.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
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2SC2412-Q 2SC2412-Q Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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2SC2412-R 2SC2412-R YANGJIE TECHNOLOGY 2SC2412.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Kind of package: reel; tape
Case: SOT23
Frequency: 160MHz
Collector current: 0.15A
Mounting: SMD
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2SC2412-R 2SC2412-R Yangjie Technology Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SC2412-S 2SC2412-S YANGJIE TECHNOLOGY 2SC2412.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
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2SC2412-S 2SC2412-S Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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2SC3052-E 2SC3052-E Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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2SC3052-E 2SC3052-E YANGJIE TECHNOLOGY Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 150...300
Kind of package: reel; tape
Case: SOT23
Frequency: 180MHz
Collector current: 0.2A
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2SC3052-F 2SC3052-F Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
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2SC3052-G 2SC3052-G Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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2SC4081-Q 2SC4081-Q Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
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2SC4081-S 2SC4081-S Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
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2SC4617-Q 2SC4617-Q Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
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2SC4617-S 2SC4617-S Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
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2SD1766-Q 2SD1766-Q Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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2SD1766-R 2SD1766-R Yangjie Technology 2SD1766-R%20%20SOT-89.pdf Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
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2SD1781-Q 2SD1781-Q YANGJIE TECHNOLOGY Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.2W; SOT23
Mounting: SMD
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...270
Kind of package: reel; tape
Case: SOT23
Collector current: 0.8A
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2SD1782-R 2SD1782-R YANGJIE TECHNOLOGY 2SD1782-R.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Frequency: 180MHz
Collector current: 0.5A
Collector-emitter voltage: 80V
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3324P 3324P Yangjie Technology Description: TVS - Diodes DFN2510 3.3V 4 li
Power Line Protection: No
Power - Peak Pulse: 65W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10L
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: DVI, HDMI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
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5.0SMDJ13A 5.0SMDJ13A YANGJIE TECHNOLOGY Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 232.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: 5.0SMDJ
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5.0SMDJ33A 5.0SMDJ33A YANGJIE TECHNOLOGY littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf 5.0SMDJ SERIES_D2102.pdf 5.0SMDJ_Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
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5.0SMDJ40CA YANGJIE TECHNOLOGY 5-0smdj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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5.0SMDJ43A YANGJIE TECHNOLOGY littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Max. forward impulse current: 72A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Breakdown voltage: 47.8...52.8V
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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1N5402 1N5400_SER.pdf
1N5402
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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1N5402G 1N5400G_SER.pdf
1N5402G
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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1N5404 1N5400_SER.pdf
1N5404
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
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1N5404G 1N5400G_SER.pdf
1N5404G
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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1N5406 1N5400_SER.pdf
1N5406
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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1N5407 1N5400_SER.pdf
1N5407
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
auf Bestellung 941 Stücke:
Lieferzeit 14-21 Tag (e)
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1N5408 1N5400_SER.pdf
1N5408
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
auf Bestellung 1004 Stücke:
Lieferzeit 14-21 Tag (e)
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1N5408G 1N5400G_SER.pdf
1N5408G
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 3199 Stücke:
Lieferzeit 14-21 Tag (e)
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1N5819 1N581x_ser.pdf
1N5819
Hersteller: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: tape
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
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1N5822 1N582x_Yangjie.pdf
Hersteller: Yangjie Technology
Діод Шотткі вивідний, Io, A = 3, Uзвор, В = 40, If, А = 3, Тексп, °C = -55...+125,... Діоди Корпус: DO-27 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
verfügbar 30 Stücke:
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1SS355Q 1SS355Q.pdf
1SS355Q
Hersteller: Yangjie Technology
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.033 EUR
15000+0.031 EUR
30000+0.03 EUR
60000+0.027 EUR
120000+0.025 EUR
300000+0.023 EUR
Mindestbestellmenge: 3000 Stücke
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2N7002 2N7002.pdf
2N7002
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Technology: TRENCH POWER MV
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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2N7002K 2N7002K.pdf
2N7002K
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.5A
Version: ESD
Technology: TRENCH POWER MV
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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2N7002KC 2N7002KC.pdf
2N7002KC
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.033 EUR
15000+0.031 EUR
30000+0.03 EUR
60000+0.027 EUR
120000+0.025 EUR
300000+0.023 EUR
Mindestbestellmenge: 3000 Stücke
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2N7002KCDW 2N7002KCDW.pdf
2N7002KCDW
Hersteller: Yangjie Technology
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.057 EUR
15000+0.052 EUR
30000+0.05 EUR
60000+0.046 EUR
120000+0.042 EUR
300000+0.038 EUR
Mindestbestellmenge: 3000 Stücke
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2N7002KCDWQ 2N7002KCDWQ.pdf
2N7002KCDWQ
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.088 EUR
15000+0.083 EUR
30000+0.08 EUR
60000+0.074 EUR
120000+0.067 EUR
300000+0.061 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KCE 2N7002KCE.pdf
2N7002KCE
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.042 EUR
15000+0.039 EUR
30000+0.036 EUR
60000+0.033 EUR
120000+0.031 EUR
300000+0.03 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KCQ 2N7002KCQ.pdf
2N7002KCQ
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.069 EUR
15000+0.065 EUR
30000+0.061 EUR
60000+0.057 EUR
120000+0.052 EUR
300000+0.048 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KCW 2N7002KCW.pdf
2N7002KCW
Hersteller: Yangjie Technology
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.039 EUR
15000+0.038 EUR
30000+0.036 EUR
60000+0.033 EUR
120000+0.03 EUR
300000+0.027 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KCWQ 2N7002KCWQ.pdf
2N7002KCWQ
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.077 EUR
15000+0.074 EUR
30000+0.069 EUR
60000+0.065 EUR
120000+0.057 EUR
300000+0.052 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KCX 2N7002KCX.pdf
2N7002KCX
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.065 EUR
15000+0.061 EUR
30000+0.057 EUR
60000+0.055 EUR
120000+0.048 EUR
300000+0.044 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002W 2N7002W.pdf
2N7002W
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1037-Q
2SA1037-Q
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.031 EUR
15000+0.029 EUR
30000+0.027 EUR
60000+0.025 EUR
120000+0.023 EUR
300000+0.021 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1037-Q 2SA1037.pdf
2SA1037-Q
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
auf Bestellung 1075 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1037-S
2SA1037-S
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.029 EUR
15000+0.027 EUR
30000+0.025 EUR
60000+0.023 EUR
120000+0.021 EUR
300000+0.019 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1576A-Q
2SA1576A-Q
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.039 EUR
15000+0.038 EUR
30000+0.036 EUR
60000+0.031 EUR
120000+0.03 EUR
300000+0.027 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1576A-R
2SA1576A-R
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.036 EUR
15000+0.033 EUR
30000+0.031 EUR
60000+0.03 EUR
120000+0.027 EUR
300000+0.025 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1576A-S
2SA1576A-S
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.036 EUR
15000+0.033 EUR
30000+0.031 EUR
60000+0.03 EUR
120000+0.027 EUR
300000+0.025 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA812-M5
2SA812-M5
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.027 EUR
15000+0.025 EUR
30000+0.023 EUR
60000+0.021 EUR
120000+0.019 EUR
300000+0.017 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA812-M6
2SA812-M6
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.027 EUR
15000+0.025 EUR
30000+0.023 EUR
60000+0.021 EUR
120000+0.019 EUR
300000+0.017 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SB1188-Q
2SB1188-Q
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.083 EUR
5000+0.08 EUR
10000+0.075 EUR
20000+0.069 EUR
40000+0.063 EUR
100000+0.058 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SB1197-Q
2SB1197-Q
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.069 EUR
15000+0.064 EUR
30000+0.061 EUR
60000+0.057 EUR
120000+0.051 EUR
300000+0.048 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SB1198-R
2SB1198-R
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.094 EUR
15000+0.09 EUR
30000+0.083 EUR
60000+0.08 EUR
120000+0.071 EUR
300000+0.067 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SB1198-RQ
2SB1198-RQ
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
15000+0.11 EUR
30000+0.1 EUR
60000+0.094 EUR
120000+0.086 EUR
300000+0.08 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC1623-L6
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.027 EUR
15000+0.025 EUR
30000+0.023 EUR
60000+0.021 EUR
120000+0.019 EUR
300000+0.017 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC2383P-O
2SC2383P-O
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.17 EUR
10000+0.15 EUR
20000+0.14 EUR
40000+0.13 EUR
100000+0.12 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC2383P-Y
2SC2383P-Y
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
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1000+0.17 EUR
10000+0.15 EUR
20000+0.14 EUR
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2SC2412-Q 2SC2412.pdf
2SC2412-Q
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
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2SC2412-Q
2SC2412-Q
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.033 EUR
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30000+0.03 EUR
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2SC2412-R 2SC2412.pdf
2SC2412-R
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Kind of package: reel; tape
Case: SOT23
Frequency: 160MHz
Collector current: 0.15A
Mounting: SMD
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2SC2412-R
2SC2412-R
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
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3000+0.036 EUR
15000+0.033 EUR
30000+0.031 EUR
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120000+0.027 EUR
300000+0.025 EUR
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2SC2412-S 2SC2412.pdf
2SC2412-S
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Produkt ist nicht verfügbar
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2SC2412-S
2SC2412-S
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.031 EUR
15000+0.03 EUR
30000+0.027 EUR
60000+0.025 EUR
120000+0.023 EUR
300000+0.021 EUR
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2SC3052-E
2SC3052-E
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
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3000+0.031 EUR
15000+0.03 EUR
30000+0.027 EUR
60000+0.025 EUR
120000+0.023 EUR
300000+0.021 EUR
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2SC3052-E
2SC3052-E
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 150...300
Kind of package: reel; tape
Case: SOT23
Frequency: 180MHz
Collector current: 0.2A
auf Bestellung 12800 Stücke:
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2SC3052-F
2SC3052-F
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
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3000+0.031 EUR
15000+0.03 EUR
30000+0.027 EUR
60000+0.025 EUR
120000+0.023 EUR
300000+0.021 EUR
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2SC3052-G
2SC3052-G
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.031 EUR
15000+0.03 EUR
30000+0.027 EUR
60000+0.025 EUR
120000+0.023 EUR
300000+0.021 EUR
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2SC4081-Q
2SC4081-Q
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.039 EUR
15000+0.038 EUR
30000+0.036 EUR
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300000+0.027 EUR
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2SC4081-S
2SC4081-S
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.036 EUR
15000+0.033 EUR
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120000+0.027 EUR
300000+0.025 EUR
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2SC4617-Q
2SC4617-Q
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
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2SC4617-S
2SC4617-S
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
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3000+0.031 EUR
15000+0.03 EUR
30000+0.027 EUR
60000+0.025 EUR
120000+0.023 EUR
300000+0.021 EUR
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2SD1766-Q
2SD1766-Q
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 100000 Stücke:
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1000+0.083 EUR
5000+0.08 EUR
10000+0.075 EUR
20000+0.069 EUR
40000+0.063 EUR
100000+0.058 EUR
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2SD1766-R 2SD1766-R%20%20SOT-89.pdf
2SD1766-R
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
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1000+0.075 EUR
5000+0.071 EUR
10000+0.067 EUR
20000+0.063 EUR
40000+0.057 EUR
100000+0.052 EUR
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2SD1781-Q
2SD1781-Q
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.2W; SOT23
Mounting: SMD
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...270
Kind of package: reel; tape
Case: SOT23
Collector current: 0.8A
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
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2SD1782-R 2SD1782-R.pdf
2SD1782-R
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Frequency: 180MHz
Collector current: 0.5A
Collector-emitter voltage: 80V
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3324P
3324P
Hersteller: Yangjie Technology
Description: TVS - Diodes DFN2510 3.3V 4 li
Power Line Protection: No
Power - Peak Pulse: 65W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10L
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: DVI, HDMI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
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3000+0.099 EUR
15000+0.092 EUR
30000+0.088 EUR
60000+0.082 EUR
120000+0.074 EUR
300000+0.069 EUR
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5.0SMDJ13A
5.0SMDJ13A
Hersteller: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 232.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: 5.0SMDJ
auf Bestellung 2978 Stücke:
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5.0SMDJ33A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf 5.0SMDJ SERIES_D2102.pdf 5.0SMDJ_Series.pdf
5.0SMDJ33A
Hersteller: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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5.0SMDJ40CA 5-0smdj.pdf
Hersteller: YANGJIE TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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5.0SMDJ43A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68
Hersteller: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Max. forward impulse current: 72A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Breakdown voltage: 47.8...52.8V
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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