Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (2820) > Seite 3 nach 47
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2N7002KCDWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCE | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCQ | Yangjie Technology |
Description: SOT-23 N 60V 0.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCW | Yangjie Technology |
Description: SOT-323 N 60V 0.3A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KCX | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002W | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SA1037-Q | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 120...270 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Case: SOT23 |
auf Bestellung 1075 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1037-Q | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1037-S | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1576A-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1576A-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1576A-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA812-M5 | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA812-M6 | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A -60V Trans Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1188-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1188-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1197-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1198-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1198-RQ | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SC1623-L6 | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.1A 60V Transis Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2383P-O | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2383P-Y | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2412-Q | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz Application: automotive industry |
auf Bestellung 5750 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2412-R | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
auf Bestellung 4825 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2412-S | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SC2412-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2412-R | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.15A 60V Transi Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2412-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3052-E | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23 Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.15W Polarisation: bipolar Type of transistor: NPN Current gain: 150...300 Kind of package: reel; tape Case: SOT23 Frequency: 180MHz Collector current: 0.2A |
auf Bestellung 12850 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3052-E | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3052-F | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3052-G | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4081-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4081-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4617-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-523 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4617-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-523 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1766-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1766-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - SiPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 500 mW |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1781-Q | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.2W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Type of transistor: NPN Current gain: 120...270 Collector current: 0.8A Collector-emitter voltage: 32V |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1782-R | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 0.2W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Type of transistor: NPN Current gain: 180...390 Frequency: 180MHz Collector current: 0.5A Collector-emitter voltage: 80V |
auf Bestellung 1875 Stücke: Lieferzeit 14-21 Tag (e) |
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3324P | Yangjie Technology |
Description: TVS - Diodes DFN2510 3.3V 4 li Power Line Protection: No Power - Peak Pulse: 65W Voltage - Clamping (Max) @ Ipp: 13V Voltage - Breakdown (Min): 5V Unidirectional Channels: 4 Supplier Device Package: DFN2510-10L Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 0.5pF @ 1MHz Applications: DVI, HDMI, USB Operating Temperature: -40°C ~ 85°C (TA) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: 10-XFDFN Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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5.0SMDJ13A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 232.6A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 0.5mA Manufacturer series: 5.0SMDJ |
auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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| 5.0SMDJ33A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 93.8A Manufacturer series: 5.0SMDJ Peak pulse power dissipation: 5kW Case: DO214AB; SMC Leakage current: 5µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 5.0SMDJ40CA | YANGJIE TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 77.5A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 5.0SMDJ43A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 47.8÷52.8V; 72A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 43V Max. forward impulse current: 72A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Breakdown voltage: 47.8...52.8V Manufacturer series: 5.0SMDJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 5.0SMDJ43CA | YANGJIE TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 47.8÷52.8V; 72A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 72A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 5.0SMDJ54A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 60÷66.3V; 57.4A; unidirectional; DO214AB,SMC Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Max. forward impulse current: 57.4A Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Manufacturer series: 5.0SMDJ Peak pulse power dissipation: 5kW Case: DO214AB; SMC Leakage current: 5µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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5.0SMDJ58A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 64.4÷71.2V; 53.4A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 53.4A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
auf Bestellung 596 Stücke: Lieferzeit 14-21 Tag (e) |
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6A10GS | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Semiconductor structure: single diode Case: DO27 Features of semiconductor devices: glass passivated Mounting: THT Type of diode: rectifying Max. forward voltage: 1.1V Load current: 6A Max. off-state voltage: 1kV Max. forward impulse current: 200A Kind of package: tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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6A1GS | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Case: DO27 Mounting: THT Max. off-state voltage: 0.1kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.1V Max. forward impulse current: 200A Kind of package: tape Features of semiconductor devices: glass passivated |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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ABS1506 | Yangjie Technology |
Description: ABS 600V 1.5A Diodes Bridge Re Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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ABS1508 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers ABS 1 Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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ABS1510 | Yangjie Technology |
Description: ABS 1000V 1.5A Diodes Bridge R Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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ABS6 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 35A; ABS; SMT Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward impulse current: 35A Case: ABS Max. off-state voltage: 0.6kV |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ASM24 | Yangjie Technology |
Description: TVS - Diodes SOT-23 24V 2 line Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23 Unidirectional Channels: 2 Voltage - Breakdown (Min): 27V Voltage - Clamping (Max) @ Ipp: 45V Power - Peak Pulse: 270W Power Line Protection: No Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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AU2804S8 | Yangjie Technology |
Description: TVS - Diodes SOP-8 2.8V 4 line Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 100W Voltage - Clamping (Max) @ Ipp: 10V Voltage - Breakdown (Min): 3.5V Bidirectional Channels: 4 Supplier Device Package: 8-SO Voltage - Reverse Standoff (Typ): 2.8V (Max) Current - Peak Pulse (10/1000µs): 10A Capacitance @ Frequency: 4.5pF @ 1MHz Applications: General Purpose |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ23B10 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ23B11 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ23B12 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002KCDWQ |
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Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.088 EUR |
| 15000+ | 0.083 EUR |
| 30000+ | 0.08 EUR |
| 60000+ | 0.074 EUR |
| 120000+ | 0.067 EUR |
| 300000+ | 0.061 EUR |
| 2N7002KCE |
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Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.042 EUR |
| 15000+ | 0.039 EUR |
| 30000+ | 0.036 EUR |
| 60000+ | 0.033 EUR |
| 120000+ | 0.031 EUR |
| 300000+ | 0.03 EUR |
| 2N7002KCQ |
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Hersteller: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.069 EUR |
| 15000+ | 0.065 EUR |
| 30000+ | 0.061 EUR |
| 60000+ | 0.057 EUR |
| 120000+ | 0.052 EUR |
| 300000+ | 0.048 EUR |
| 2N7002KCW |
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Hersteller: Yangjie Technology
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.039 EUR |
| 15000+ | 0.038 EUR |
| 30000+ | 0.036 EUR |
| 60000+ | 0.033 EUR |
| 120000+ | 0.03 EUR |
| 300000+ | 0.027 EUR |
| 2N7002KCWQ |
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Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.077 EUR |
| 15000+ | 0.074 EUR |
| 30000+ | 0.069 EUR |
| 60000+ | 0.065 EUR |
| 120000+ | 0.057 EUR |
| 300000+ | 0.052 EUR |
| 2N7002KCX |
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Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.065 EUR |
| 15000+ | 0.061 EUR |
| 30000+ | 0.057 EUR |
| 60000+ | 0.055 EUR |
| 120000+ | 0.048 EUR |
| 300000+ | 0.044 EUR |
| 2N7002W |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1037-Q |
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Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
auf Bestellung 1075 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1075+ | 0.08 EUR |
| 2SA1037-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.031 EUR |
| 15000+ | 0.029 EUR |
| 30000+ | 0.027 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SA1037-S |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.029 EUR |
| 15000+ | 0.027 EUR |
| 30000+ | 0.025 EUR |
| 60000+ | 0.023 EUR |
| 120000+ | 0.021 EUR |
| 300000+ | 0.019 EUR |
| 2SA1576A-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.039 EUR |
| 15000+ | 0.038 EUR |
| 30000+ | 0.036 EUR |
| 60000+ | 0.031 EUR |
| 120000+ | 0.03 EUR |
| 300000+ | 0.027 EUR |
| 2SA1576A-R |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.036 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.031 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.027 EUR |
| 300000+ | 0.025 EUR |
| 2SA1576A-S |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.036 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.031 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.027 EUR |
| 300000+ | 0.025 EUR |
| 2SA812-M5 |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.027 EUR |
| 15000+ | 0.025 EUR |
| 30000+ | 0.023 EUR |
| 60000+ | 0.021 EUR |
| 120000+ | 0.019 EUR |
| 300000+ | 0.017 EUR |
| 2SA812-M6 |
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.027 EUR |
| 15000+ | 0.025 EUR |
| 30000+ | 0.023 EUR |
| 60000+ | 0.021 EUR |
| 120000+ | 0.019 EUR |
| 300000+ | 0.017 EUR |
| 2SB1188-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.083 EUR |
| 5000+ | 0.08 EUR |
| 10000+ | 0.075 EUR |
| 20000+ | 0.069 EUR |
| 40000+ | 0.063 EUR |
| 100000+ | 0.058 EUR |
| 2SB1188-R |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.075 EUR |
| 5000+ | 0.071 EUR |
| 10000+ | 0.067 EUR |
| 20000+ | 0.063 EUR |
| 40000+ | 0.057 EUR |
| 100000+ | 0.052 EUR |
| 2SB1197-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.069 EUR |
| 15000+ | 0.064 EUR |
| 30000+ | 0.061 EUR |
| 60000+ | 0.057 EUR |
| 120000+ | 0.051 EUR |
| 300000+ | 0.048 EUR |
| 2SB1198-R |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.094 EUR |
| 15000+ | 0.09 EUR |
| 30000+ | 0.083 EUR |
| 60000+ | 0.08 EUR |
| 120000+ | 0.071 EUR |
| 300000+ | 0.067 EUR |
| 2SB1198-RQ |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.11 EUR |
| 15000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 60000+ | 0.094 EUR |
| 120000+ | 0.086 EUR |
| 300000+ | 0.08 EUR |
| 2SC1623-L6 |
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.027 EUR |
| 15000+ | 0.025 EUR |
| 30000+ | 0.023 EUR |
| 60000+ | 0.021 EUR |
| 120000+ | 0.019 EUR |
| 300000+ | 0.017 EUR |
| 2SC2383P-O |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.17 EUR |
| 10000+ | 0.15 EUR |
| 20000+ | 0.14 EUR |
| 40000+ | 0.13 EUR |
| 100000+ | 0.12 EUR |
| 2SC2383P-Y |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.17 EUR |
| 10000+ | 0.15 EUR |
| 20000+ | 0.14 EUR |
| 40000+ | 0.13 EUR |
| 100000+ | 0.12 EUR |
| 2SC2412-Q |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
auf Bestellung 5750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1475+ | 0.058 EUR |
| 2925+ | 0.03 EUR |
| 3250+ | 0.026 EUR |
| 3700+ | 0.023 EUR |
| 2SC2412-R |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
auf Bestellung 4825 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1450+ | 0.06 EUR |
| 3125+ | 0.027 EUR |
| 3475+ | 0.025 EUR |
| 3950+ | 0.021 EUR |
| 2SC2412-S |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
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Mindestbestellmenge: 25 Stücke
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| 2SC2412-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.033 EUR |
| 15000+ | 0.031 EUR |
| 30000+ | 0.03 EUR |
| 60000+ | 0.027 EUR |
| 120000+ | 0.025 EUR |
| 300000+ | 0.023 EUR |
| 2SC2412-R |
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.036 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.031 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.027 EUR |
| 300000+ | 0.025 EUR |
| 2SC2412-S |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.031 EUR |
| 15000+ | 0.03 EUR |
| 30000+ | 0.027 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SC3052-E |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 150...300
Kind of package: reel; tape
Case: SOT23
Frequency: 180MHz
Collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 150...300
Kind of package: reel; tape
Case: SOT23
Frequency: 180MHz
Collector current: 0.2A
auf Bestellung 12850 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1800+ | 0.048 EUR |
| 2300+ | 0.037 EUR |
| 3850+ | 0.023 EUR |
| 4275+ | 0.02 EUR |
| 2SC3052-E |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.031 EUR |
| 15000+ | 0.03 EUR |
| 30000+ | 0.027 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SC3052-F |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.031 EUR |
| 15000+ | 0.03 EUR |
| 30000+ | 0.027 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SC3052-G |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.031 EUR |
| 15000+ | 0.03 EUR |
| 30000+ | 0.027 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SC4081-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.039 EUR |
| 15000+ | 0.038 EUR |
| 30000+ | 0.036 EUR |
| 60000+ | 0.031 EUR |
| 120000+ | 0.03 EUR |
| 300000+ | 0.027 EUR |
| 2SC4081-S |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.036 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.031 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.027 EUR |
| 300000+ | 0.025 EUR |
| 2SC4617-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Description: Transistors - Bipolar (BJT) - Si
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.042 EUR |
| 15000+ | 0.039 EUR |
| 30000+ | 0.038 EUR |
| 60000+ | 0.036 EUR |
| 120000+ | 0.031 EUR |
| 300000+ | 0.03 EUR |
| 2SC4617-S |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.031 EUR |
| 15000+ | 0.03 EUR |
| 30000+ | 0.027 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| 2SD1766-Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.083 EUR |
| 5000+ | 0.08 EUR |
| 10000+ | 0.075 EUR |
| 20000+ | 0.069 EUR |
| 40000+ | 0.063 EUR |
| 100000+ | 0.058 EUR |
| 2SD1766-R |
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Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.075 EUR |
| 5000+ | 0.071 EUR |
| 10000+ | 0.067 EUR |
| 20000+ | 0.063 EUR |
| 40000+ | 0.057 EUR |
| 100000+ | 0.052 EUR |
| 2SD1781-Q |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...270
Collector current: 0.8A
Collector-emitter voltage: 32V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...270
Collector current: 0.8A
Collector-emitter voltage: 32V
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 390+ | 0.21 EUR |
| 685+ | 0.12 EUR |
| 1300+ | 0.065 EUR |
| 1445+ | 0.06 EUR |
| 2SD1782-R |
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Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Frequency: 180MHz
Collector current: 0.5A
Collector-emitter voltage: 80V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Frequency: 180MHz
Collector current: 0.5A
Collector-emitter voltage: 80V
auf Bestellung 1875 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 535+ | 0.15 EUR |
| 1060+ | 0.08 EUR |
| 1875+ | 0.046 EUR |
| 3324P |
Hersteller: Yangjie Technology
Description: TVS - Diodes DFN2510 3.3V 4 li
Power Line Protection: No
Power - Peak Pulse: 65W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10L
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: DVI, HDMI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TVS - Diodes DFN2510 3.3V 4 li
Power Line Protection: No
Power - Peak Pulse: 65W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10L
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: DVI, HDMI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.099 EUR |
| 15000+ | 0.092 EUR |
| 30000+ | 0.088 EUR |
| 60000+ | 0.082 EUR |
| 120000+ | 0.074 EUR |
| 300000+ | 0.069 EUR |
| 5.0SMDJ13A |
Hersteller: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 232.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 232.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: 5.0SMDJ
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 1.11 EUR |
| 151+ | 0.57 EUR |
| 171+ | 0.5 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
| 5.0SMDJ33A |
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Hersteller: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 5.0SMDJ40CA |
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Hersteller: YANGJIE TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 5.0SMDJ43A |
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Hersteller: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Max. forward impulse current: 72A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Breakdown voltage: 47.8...52.8V
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Max. forward impulse current: 72A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Breakdown voltage: 47.8...52.8V
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 5.0SMDJ43CA |
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Hersteller: YANGJIE TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 5.0SMDJ54A |
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Hersteller: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 60÷66.3V; 57.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. forward impulse current: 57.4A
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 60÷66.3V; 57.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. forward impulse current: 57.4A
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 5.0SMDJ58A |
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Hersteller: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 64.4÷71.2V; 53.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 53.4A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 64.4÷71.2V; 53.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 53.4A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
auf Bestellung 596 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 1.11 EUR |
| 151+ | 0.57 EUR |
| 171+ | 0.5 EUR |
| 500+ | 0.44 EUR |
| 6A10GS |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Semiconductor structure: single diode
Case: DO27
Features of semiconductor devices: glass passivated
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 6A
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Semiconductor structure: single diode
Case: DO27
Features of semiconductor devices: glass passivated
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 6A
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 6A1GS |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Case: DO27
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: tape
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Case: DO27
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: tape
Features of semiconductor devices: glass passivated
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 87+ | 0.99 EUR |
| 236+ | 0.36 EUR |
| 290+ | 0.3 EUR |
| 371+ | 0.23 EUR |
| ABS1506 |
Hersteller: Yangjie Technology
Description: ABS 600V 1.5A Diodes Bridge Re
Packaging: Tape & Reel (TR)
Part Status: Active
Description: ABS 600V 1.5A Diodes Bridge Re
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.13 EUR |
| 20000+ | 0.12 EUR |
| 40000+ | 0.11 EUR |
| 80000+ | 0.1 EUR |
| 160000+ | 0.094 EUR |
| 400000+ | 0.088 EUR |
| ABS1508 |
Hersteller: Yangjie Technology
Description: Diodes - Bridge Rectifiers ABS 1
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Bridge Rectifiers ABS 1
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.13 EUR |
| 20000+ | 0.12 EUR |
| 40000+ | 0.11 EUR |
| 80000+ | 0.1 EUR |
| 160000+ | 0.094 EUR |
| 400000+ | 0.088 EUR |
| ABS1510 |
Hersteller: Yangjie Technology
Description: ABS 1000V 1.5A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
Description: ABS 1000V 1.5A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.096 EUR |
| 20000+ | 0.09 EUR |
| 40000+ | 0.086 EUR |
| 80000+ | 0.08 EUR |
| 160000+ | 0.071 EUR |
| 400000+ | 0.067 EUR |
| ABS6 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 35A; ABS; SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward impulse current: 35A
Case: ABS
Max. off-state voltage: 0.6kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 35A; ABS; SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward impulse current: 35A
Case: ABS
Max. off-state voltage: 0.6kV
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| ASM24 |
Hersteller: Yangjie Technology
Description: TVS - Diodes SOT-23 24V 2 line
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 27V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 270W
Power Line Protection: No
Part Status: Active
Description: TVS - Diodes SOT-23 24V 2 line
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 27V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 270W
Power Line Protection: No
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.086 EUR |
| 15000+ | 0.082 EUR |
| 30000+ | 0.077 EUR |
| 60000+ | 0.074 EUR |
| 120000+ | 0.065 EUR |
| 300000+ | 0.061 EUR |
| AU2804S8 |
Hersteller: Yangjie Technology
Description: TVS - Diodes SOP-8 2.8V 4 line
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 3.5V
Bidirectional Channels: 4
Supplier Device Package: 8-SO
Voltage - Reverse Standoff (Typ): 2.8V (Max)
Current - Peak Pulse (10/1000µs): 10A
Capacitance @ Frequency: 4.5pF @ 1MHz
Applications: General Purpose
Description: TVS - Diodes SOP-8 2.8V 4 line
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 3.5V
Bidirectional Channels: 4
Supplier Device Package: 8-SO
Voltage - Reverse Standoff (Typ): 2.8V (Max)
Current - Peak Pulse (10/1000µs): 10A
Capacitance @ Frequency: 4.5pF @ 1MHz
Applications: General Purpose
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.64 EUR |
| 12500+ | 0.61 EUR |
| 25000+ | 0.57 EUR |
| 50000+ | 0.54 EUR |
| 100000+ | 0.48 EUR |
| 250000+ | 0.44 EUR |
| AZ23B10 |
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.052 EUR |
| 15000+ | 0.051 EUR |
| 30000+ | 0.048 EUR |
| 60000+ | 0.045 EUR |
| 120000+ | 0.042 EUR |
| 300000+ | 0.037 EUR |
| AZ23B11 |
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.052 EUR |
| 15000+ | 0.051 EUR |
| 30000+ | 0.048 EUR |
| 60000+ | 0.045 EUR |
| 120000+ | 0.042 EUR |
| 300000+ | 0.037 EUR |
| AZ23B12 |
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.052 EUR |
| 15000+ | 0.051 EUR |
| 30000+ | 0.048 EUR |
| 60000+ | 0.045 EUR |
| 120000+ | 0.042 EUR |
| 300000+ | 0.037 EUR |


















