Produkte > NVB

Power MOSFET, N-Channel Automotive AEC-Q101

Produkt ist nicht verfügbar

NVB055N60S5F

Description: SUPERFET5 FRFET, 55MOHM, D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 5.2mA
Supplier Device Package: D²PAK-3 (TO-263-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4603 pF @ 400 V

auf Bestellung 7200 Stücke:

Lieferzeit 10-14 Tag (e)

800+	8.26 EUR
1600+	7.2 EUR
2400+	6.93 EUR

Mindestbestellmenge: 800

NVB072N65S3

Description: MOSFET N-CH 650V 44A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 683 Stücke:

Lieferzeit 10-14 Tag (e)

2+	13.06 EUR
10+	11.2 EUR
100+	9.34 EUR

Mindestbestellmenge: 2

NVB072N65S3

Trans MOSFET N-CH 650V 44A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

auf Bestellung 816 Stücke:

Lieferzeit 14-21 Tag (e)

18+	9.1 EUR
19+	8.03 EUR
25+	7.36 EUR
100+	6.74 EUR
250+	6.24 EUR
500+	5.43 EUR

Mindestbestellmenge: 18

NVB072N65S3

Trans MOSFET N-CH 650V 44A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB072N65S3

auf Bestellung 1350 Stücke:

Lieferzeit 21-28 Tag (e)

NVB072N65S3

Trans MOSFET N-CH 650V 44A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

auf Bestellung 1528 Stücke:

Lieferzeit 14-21 Tag (e)

16+	10.29 EUR
18+	8.81 EUR
25+	7.9 EUR
100+	7.1 EUR
250+	6.56 EUR
500+	5.73 EUR
800+	4.99 EUR

Mindestbestellmenge: 16

NVB072N65S3

Description: MOSFET N-CH 650V 44A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVB072N65S3

Trans MOSFET N-CH 650V 44A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

auf Bestellung 1528 Stücke:

Lieferzeit 14-21 Tag (e)

16+	10.29 EUR
18+	8.81 EUR
25+	7.9 EUR
100+	7.1 EUR
250+	6.56 EUR
500+	5.73 EUR
800+	4.99 EUR

Mindestbestellmenge: 16

NVB072N65S3

Trans MOSFET N-CH 650V 44A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB072N65S3

MOSFET SUPERFET3 650V D2PAK PKG

auf Bestellung 3050 Stücke:

Lieferzeit 10-14 Tag (e)

1+	12.97 EUR
10+	11.11 EUR
25+	10.08 EUR
100+	9.26 EUR
250+	8.73 EUR
500+	8.17 EUR
800+	7.36 EUR

NVB072N65S3

Trans MOSFET N-CH 650V 44A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB072N65S3

Trans MOSFET N-CH 650V 44A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

auf Bestellung 816 Stücke:

Lieferzeit 14-21 Tag (e)

18+	9.1 EUR
19+	8.03 EUR
25+	7.36 EUR
100+	6.74 EUR
250+	6.24 EUR
500+	5.43 EUR

Mindestbestellmenge: 18

NVB082N65S3F

Trans MOSFET N-CH 650V 40A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB082N65S3F

Description: MOSFET N-CH 650V 40A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

2+	14.1 EUR
10+	12.07 EUR
100+	10.06 EUR

Mindestbestellmenge: 2

NVB082N65S3F

MOSFET SUPERFET3 650V D2PAK PKG

auf Bestellung 19 Stücke:

Lieferzeit 10-14 Tag (e)

1+	13.97 EUR
10+	11.99 EUR
25+	10.88 EUR
100+	9.98 EUR
250+	9.4 EUR
500+	8.8 EUR
800+	7.92 EUR

NVB082N65S3F

Trans MOSFET N-CH 650V 40A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB082N65S3F

Description: MOSFET N-CH 650V 40A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	8.88 EUR

Mindestbestellmenge: 800

NVB082N65S3F

Trans MOSFET N-CH 650V 40A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB082N65S3F

auf Bestellung 1 Stücke:

Lieferzeit 21-28 Tag (e)

NVB095N65S3F

MOSFET SUPERFET III MOSFET, 36A, 95mohm, 650V in D2PAK

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

1+	10.72 EUR
10+	9.01 EUR
100+	7.3 EUR
500+	7.16 EUR
800+	5.53 EUR
2400+	5.21 EUR

NVB095N65S3F

Trans MOSFET N-CH 650V 36A Automotive T/R

Produkt ist nicht verfügbar

NVB095N65S3F

Description: SF3 FRFET AUTO 95MOHM D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

2+	10.65 EUR
10+	8.94 EUR
100+	7.23 EUR

Mindestbestellmenge: 2

NVB095N65S3F

Trans MOSFET N-CH 650V 36A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

NVB095N65S3F

Description: SF3 FRFET AUTO 95MOHM D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	6.43 EUR

Mindestbestellmenge: 800

NVB099N65S3

Description: SF3 650V EASY 99MOHM D2PAK AUTO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	4.64 EUR

Mindestbestellmenge: 800

NVB099N65S3

Single N Channel Power MOSFET, Easy Drive, 650 V, 30 A Automotive AEC-Q101

Produkt ist nicht verfügbar

NVB099N65S3

Description: SF3 650V EASY 99MOHM D2PAK AUTO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V

auf Bestellung 1408 Stücke:

Lieferzeit 10-14 Tag (e)

3+	7.69 EUR
10+	6.45 EUR
100+	5.22 EUR

Mindestbestellmenge: 3

NVB099N65S3

MOSFET Single N-Channel Power MOSFET SUPERFET III, Easy Drive, 650 V , 30 A, 99 mohm, D2PAK

auf Bestellung 790 Stücke:

Lieferzeit 10-14 Tag (e)

1+	7.74 EUR
10+	6.49 EUR
100+	5.26 EUR
500+	4.95 EUR
800+	3.89 EUR
2400+	3.77 EUR

NVB099N65S3

Single N Channel Power MOSFET, Easy Drive, 650 V, 30 A

Produkt ist nicht verfügbar

NVB110N65S3F

Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	6.24 EUR

Mindestbestellmenge: 800

NVB110N65S3F

MOSFET SUPERFET3 650V D2PAK PKG

auf Bestellung 505 Stücke:

Lieferzeit 10-14 Tag (e)

1+	10.24 EUR
10+	8.61 EUR
25+	8.34 EUR
100+	6.95 EUR
250+	6.76 EUR
500+	6.55 EUR
800+	5.3 EUR

NVB110N65S3F

Power MOSFET Single N-Channel

Produkt ist nicht verfügbar

NVB110N65S3F

Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
Qualification: AEC-Q101

auf Bestellung 1570 Stücke:

Lieferzeit 10-14 Tag (e)

2+	10.33 EUR
10+	8.67 EUR
100+	7.02 EUR

Mindestbestellmenge: 2

NVB125N65S3

MOSFET Power, N Channel, Automotive, Easy drive, 650 V, 24 A, 125 m

Produkt ist nicht verfügbar

NVB125N65S3

Description: SF3 650V EASY 125MOHM D2PAK AUTO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V

auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)

800+	3.88 EUR
1600+	3.32 EUR
2400+	3.13 EUR

Mindestbestellmenge: 800

NVB125N65S3

MOSFET MOSFET - Power, N-Channel, SUPERFET III, Automotive, Easy-drive, 650 V, 24 A, 125 mohm D2-PAK

auf Bestellung 790 Stücke:

Lieferzeit 10-14 Tag (e)

1+	6.39 EUR
10+	5.35 EUR
25+	5.21 EUR
100+	4.33 EUR
250+	4.21 EUR
500+	4.08 EUR
800+	3.29 EUR

NVB125N65S3

MOSFET Power, N Channel, Automotive AEC-Q101, Easy drive, 650 V, 24 A, 125 m

Produkt ist nicht verfügbar

NVB125N65S3

Description: SF3 650V EASY 125MOHM D2PAK AUTO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V

auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)

3+	6.42 EUR
10+	5.39 EUR
100+	4.37 EUR

Mindestbestellmenge: 3

NVB150N65S3F

Trans MOSFET N-CH 650V 24A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB150N65S3F

Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 1493 Stücke:

Lieferzeit 10-14 Tag (e)

3+	6.86 EUR
10+	5.75 EUR
100+	4.65 EUR

Mindestbestellmenge: 3

NVB150N65S3F

auf Bestellung 700 Stücke:

Lieferzeit 21-28 Tag (e)

NVB150N65S3F

MOSFET 650V FRFET,150M

auf Bestellung 2430 Stücke:

Lieferzeit 10-14 Tag (e)

1+	6.79 EUR
10+	5.72 EUR
25+	5.39 EUR
100+	4.61 EUR
250+	4.35 EUR
500+	3.94 EUR
800+	3.34 EUR

NVB150N65S3F

Trans MOSFET N-CH 650V 24A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB150N65S3F

Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	4.14 EUR

Mindestbestellmenge: 800

NVB150N65S3F

Trans MOSFET N-CH 650V 24A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB190N65S3

Description: MOSFET N-CH 650V 20A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 400 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVB190N65S3F

MOSFET SUPERFET3 650V FRFET,190M

auf Bestellung 4474 Stücke:

Lieferzeit 10-14 Tag (e)

1+	6.27 EUR
10+	5.26 EUR
100+	4.28 EUR
800+	3.31 EUR
2400+	3.13 EUR
4800+	3.04 EUR

NVB190N65S3F

Description: ONSEMI - NVB190N65S3F - Leistungs-MOSFET, n-Kanal, 650 V, 20 A, 0.158 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85415000
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Verlustleistung Pd: 162W
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 162W
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3Pin(s)
productTraceability: No
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.158ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.158ohm

auf Bestellung 1468 Stücke:

Lieferzeit 14-21 Tag (e)

NVB190N65S3F

Trans MOSFET N-CH 650V 20A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Reel

Produkt ist nicht verfügbar

NVB190N65S3F

Trans MOSFET N-CH 650V 20A Automotive 3-Pin(2+Tab) D2PAK Reel

Produkt ist nicht verfügbar

NVB190N65S3F

Description: MOSFET N-CH 650V 20A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVB190N65S3F

Description: ONSEMI - NVB190N65S3F - Leistungs-MOSFET, n-Kanal, 650 V, 20 A, 0.158 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85415000
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 162W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.158ohm

auf Bestellung 1468 Stücke:

Lieferzeit 14-21 Tag (e)

NVB190N65S3F

Trans MOSFET N-CH 650V 20A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Reel

Produkt ist nicht verfügbar

NVB190N65S3F

Description: MOSFET N-CH 650V 20A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 627 Stücke:

Lieferzeit 10-14 Tag (e)

3+	6.23 EUR
10+	5.23 EUR
100+	4.23 EUR

Mindestbestellmenge: 3

NVB190N65S3F

auf Bestellung 590 Stücke:

Lieferzeit 21-28 Tag (e)

NVB25P06T4G

Description: MOSFET P-CH 60V 27.5A D2PAK

Produkt ist nicht verfügbar

NVB25P06T4G

Description: MOSFET P-CH 60V 27.5A D2PAK

Produkt ist nicht verfügbar

NVB25P06T4G

MOSFET AUTOMOTIVE MOSFET

auf Bestellung 572 Stücke:

Lieferzeit 10-14 Tag (e)

NVB260N65S3

MOSFET Single N-Channel Power MOSFET SUPERFET III, Easy Drive, 650 V , 12 A, 260 mohm, D2PAK

auf Bestellung 496 Stücke:

Lieferzeit 10-14 Tag (e)

1+	4.82 EUR
10+	4.01 EUR
100+	3.19 EUR
500+	2.57 EUR
800+	2.22 EUR
2400+	2.09 EUR
4800+	2.06 EUR

NVB260N65S3

Description: SF3 650V EASY 260MOHM D2PAK AUTO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V

Produkt ist nicht verfügbar

NVB260N65S3

auf Bestellung 770 Stücke:

Lieferzeit 21-28 Tag (e)

NVB260N65S3

Description: SF3 650V EASY 260MOHM D2PAK AUTO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V

Produkt ist nicht verfügbar

NVB260N65S3

Single N Channel Power MOSFET, Easy Drive, 650 V, 12 A, 260 m Automotive AEC-Q101

Produkt ist nicht verfügbar

NVB260N65S3

Single N Channel Power MOSFET, Easy Drive, 650 V, 12 A, 260 m

Produkt ist nicht verfügbar

NVB5404NT4G

Trans MOSFET N-CH 40V 24A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB5404NT4G

Description: ONSEMI - NVB5404NT4G - NVB5404NT4G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 492 Stücke:

Lieferzeit 14-21 Tag (e)

NVB5404NT4G

MOSFET NFET D2PK 40V 129A 4.5MOH

auf Bestellung 719 Stücke:

Lieferzeit 10-14 Tag (e)

NVB5404NT4G

Description: MOSFET N-CH 40V 24A D2PAK
Packaging: Cut Tape (CT)

auf Bestellung 796 Stücke:

Lieferzeit 10-14 Tag (e)

4+	4.73 EUR
10+	3.93 EUR
100+	3.13 EUR

Mindestbestellmenge: 4

NVB5405NT4G

Trans MOSFET N-CH 40V 16.5A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB5405NT4G

Description: NVB5405 - SINGLE N-CHANNEL POWER
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V

auf Bestellung 5600 Stücke:

Lieferzeit 10-14 Tag (e)

214+	2.28 EUR

Mindestbestellmenge: 214

NVB5426NT4G

Description: MOSFET N-CH 60V 120A D2PAK

Produkt ist nicht verfügbar

NVB5860NLT4G

MOSFET NFET D2PAK 60V 169A 3MOHM

auf Bestellung 731 Stücke:

Lieferzeit 10-14 Tag (e)

NVB5860NLT4G

Trans MOSFET N-CH 60V 220A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB5860NLT4G

Description: MOSFET N-CH 60V 169A D2PAK

Produkt ist nicht verfügbar

NVB5860NT4G

Trans MOSFET N-CH 60V 220A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB5860NT4G

Description: MOSFET N-CH 60V 169A D2PAK

Produkt ist nicht verfügbar

NVB60N06T4G

Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 1000 Stücke:

Lieferzeit 10-14 Tag (e)

210+	2.37 EUR

Mindestbestellmenge: 210

NVB60N06T4G

Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB60N06T4G

Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVB60N06T4G

MOSFET NFET 60V .016R TR

Produkt ist nicht verfügbar

NVB6410ANT4G

Description: MOSFET N-CH 100V 76A D2PAK

Produkt ist nicht verfügbar

NVB6410ANT4G

Trans MOSFET N-CH 100V 76A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB6410ANT4G

MOSFET NFET D2PAK 100V 76A 13MOH

auf Bestellung 700 Stücke:

Lieferzeit 10-14 Tag (e)

NVB6411ANT4G

Trans MOSFET N-CH 100V 77A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB6411ANT4G

MOSFET NFET D2PAK 100V 75A 16MO

auf Bestellung 110 Stücke:

Lieferzeit 10-14 Tag (e)

NVB6411ANT4G

Description: MOSFET N-CH 100V 77A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVB6411ANT4G

Description: MOSFET N-CH 100V 77A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

175+	2.77 EUR

Mindestbestellmenge: 175

NVB6412ANT4G

Trans MOSFET N-CH 100V 58A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

auf Bestellung 548 Stücke:

Lieferzeit 14-21 Tag (e)

77+	2.05 EUR
80+	1.91 EUR
84+	1.73 EUR
86+	1.63 EUR
100+	1.51 EUR
500+	1.41 EUR

Mindestbestellmenge: 77

NVB6412ANT4G

Trans MOSFET N-CH 100V 58A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

auf Bestellung 548 Stücke:

Lieferzeit 14-21 Tag (e)

77+	2.05 EUR
80+	1.91 EUR
84+	1.73 EUR
86+	1.63 EUR
100+	1.51 EUR
500+	1.41 EUR

Mindestbestellmenge: 77

NVB6412ANT4G

Trans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB6412ANT4G

MOSFET NFET D2PAK 100V 59A 20MO

auf Bestellung 1016 Stücke:

Lieferzeit 10-14 Tag (e)

NVB6412ANT4G

Description: MOSFET N-CH 100V 58A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V

Produkt ist nicht verfügbar

NVB6413ANT4G

Trans MOSFET N-CH 100V 42A Automotive 3-Pin(2+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVB6413ANT4G

Description: MOSFET N-CH 100V 40A D2PAK

Produkt ist nicht verfügbar

NVBF170LT1G

MOSFET Automotive Power MOSFET, 60V, 500mA, 5 Ohm, Single N-Channel, SOT-23, Logic Level. Automotive version of the MMBF170L.

Produkt ist nicht verfügbar

NVBF170LT1G

Trans MOSFET N-CH 60V 0.5A Automotive 3-Pin SOT-23 T/R

Produkt ist nicht verfügbar

NVBF170LT1G

Trans MOSFET N-CH 60V 0.5A Automotive 3-Pin SOT-23 T/R

Produkt ist nicht verfügbar

NVBG015N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVBG015N065SC1

Trans MOSFET N-CH SiC 650V 145A Automotive T/R

Produkt ist nicht verfügbar

NVBG015N065SC1

Trans MOSFET N-CH SiC 650V 145A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG015N065SC1

Trans MOSFET N-CH SiC 650V 145A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG015N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 737 Stücke:

Lieferzeit 10-14 Tag (e)

1+	105.28 EUR
10+	95.72 EUR
100+	86.14 EUR

NVBG015N065SC1

MOSFET SIC MOS D2PAK-7L 650V

auf Bestellung 558 Stücke:

Lieferzeit 10-14 Tag (e)

1+	103.44 EUR
10+	94.04 EUR
25+	92.65 EUR
50+	91.66 EUR
100+	84.62 EUR
250+	83.23 EUR
500+	80.29 EUR

NVBG020N090SC1

Trans MOSFET N-CH SiC 900V 9.8A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG020N090SC1

auf Bestellung 14 Stücke:

Lieferzeit 21-28 Tag (e)

NVBG020N090SC1

Description: SICFET N-CH 900V 9.8A/112A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 12800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	76.33 EUR

Mindestbestellmenge: 800

NVBG020N090SC1

Description: ONSEMI - NVBG020N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 900V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 112A
hazardous: false
rohsPhthalatesCompliant: YES
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 477W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 15V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.02ohm
SVHC: Lead (14-Jun-2023)

auf Bestellung 629 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG020N090SC1

Trans MOSFET N-CH SiC 900V 9.8A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 800 Stücke:

Lieferzeit 14-21 Tag (e)

800+	94.43 EUR

Mindestbestellmenge: 800

NVBG020N090SC1

MOSFET 20MOHM 900V

auf Bestellung 716 Stücke:

Lieferzeit 10-14 Tag (e)

1+	101.52 EUR
10+	92.56 EUR
25+	91.48 EUR
50+	90.53 EUR
100+	83.83 EUR
250+	81.49 EUR
500+	78.37 EUR

NVBG020N090SC1

Trans MOSFET N-CH SiC 900V 9.8A 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG020N090SC1

Trans MOSFET N-CH SiC 900V 9.8A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG020N090SC1

Description: SICFET N-CH 900V 9.8A/112A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101

auf Bestellung 13428 Stücke:

Lieferzeit 10-14 Tag (e)

1+	101.76 EUR
10+	92.51 EUR
100+	83.26 EUR

NVBG020N090SC1

auf Bestellung 629 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG020N120SC1

Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 1554 Stücke:

Lieferzeit 10-14 Tag (e)

NVBG020N120SC1

Description: ONSEMI - NVBG020N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 98 A, 1.2 kV, 0.02 ohm, TO-263 (D2PAK)
tariffCode: 85415000
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 98A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Verlustleistung Pd: 468W
Gate-Source-Schwellenspannung, max.: 2.7V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 468W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.02ohm
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.02ohm

auf Bestellung 742 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG020N120SC1

MOSFET SIC MOS D2PAK-7L 20MOHM 1

auf Bestellung 779 Stücke:

Lieferzeit 10-14 Tag (e)

1+	132.16 EUR
10+	122.74 EUR
25+	118.15 EUR
50+	116.74 EUR
100+	109.91 EUR
250+	107.91 EUR
500+	102.41 EUR

NVBG020N120SC1

Trans MOSFET N-CH 1.2KV 8.6A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG020N120SC1

Trans MOSFET N-CH 1.2KV 8.6A Automotive T/R

Produkt ist nicht verfügbar

NVBG020N120SC1

Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

NVBG020N120SC1

Description: ONSEMI - NVBG020N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 98 A, 1.2 kV, 0.02 ohm, TO-263 (D2PAK)
tariffCode: 85415000
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 98A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.7V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 468W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.02ohm

auf Bestellung 742 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG020N120SC1

Trans MOSFET N-CH 1.2KV 8.6A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG020N120SC1

auf Bestellung 671 Stücke:

Lieferzeit 21-28 Tag (e)

NVBG020N120SC1

Trans MOSFET N-CH 1.2KV 8.6A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 800 Stücke:

Lieferzeit 14-21 Tag (e)

800+	128.42 EUR

Mindestbestellmenge: 800

NVBG022N120M3S

Silicon Carbide MOSFET,22mohm,1200V Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG022N120M3S

Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 795 Stücke:

Lieferzeit 10-14 Tag (e)

1+	88.16 EUR
10+	78.56 EUR
100+	68.95 EUR

NVBG022N120M3S

Silicon Carbide MOSFET,22mohm,1200V Automotive AEC-Q101

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

800+	52.7 EUR

Mindestbestellmenge: 800

NVBG022N120M3S

Silicon Carbide MOSFET,22mohm,1200V Automotive AEC-Q101

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

800+	57.35 EUR

Mindestbestellmenge: 800

NVBG022N120M3S

Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVBG022N120M3S

MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L

auf Bestellung 870 Stücke:

Lieferzeit 10-14 Tag (e)

1+	87.58 EUR
10+	78.02 EUR
25+	73.39 EUR
50+	70.95 EUR
100+	68.48 EUR
250+	66.05 EUR
500+	61.88 EUR

NVBG022N120M3S

Silicon Carbide MOSFET,22mohm,1200V Automotive AEC-Q101

auf Bestellung 30 Stücke:

Lieferzeit 14-21 Tag (e)

3+	67.76 EUR
10+	61.12 EUR
25+	57.65 EUR

Mindestbestellmenge: 3

NVBG022N120M3S

SiC MOSFET 1200 V 22 mohm

auf Bestellung 1200 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG022N120M3S

Silicon Carbide MOSFET,22mohm,1200V Automotive AEC-Q101

auf Bestellung 189 Stücke:

Lieferzeit 14-21 Tag (e)

3+	67.76 EUR
10+	61.12 EUR
25+	57.65 EUR

Mindestbestellmenge: 3

NVBG025N065SC1

MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L

auf Bestellung 88 Stücke:

Lieferzeit 10-14 Tag (e)

1+	67.94 EUR
10+	61.35 EUR
25+	59.33 EUR
100+	54.96 EUR
250+	53.35 EUR
500+	50.62 EUR
800+	49.84 EUR

NVBG025N065SC1

Silicon Carbide MOSFET,19mohm,650V Automotive AEC-Q101

auf Bestellung 100 Stücke:

Lieferzeit 14-21 Tag (e)

3+	53.2 EUR

Mindestbestellmenge: 3

NVBG025N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

1+	43.81 EUR
10+	38.93 EUR
100+	34.05 EUR

NVBG025N065SC1

NVBG025N065SC1

Produkt ist nicht verfügbar

NVBG025N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	29.05 EUR

Mindestbestellmenge: 800

NVBG025N065SC1

Silicon Carbide MOSFET,19mohm,650V Automotive AEC-Q101

auf Bestellung 30 Stücke:

Lieferzeit 14-21 Tag (e)

3+	53.2 EUR

Mindestbestellmenge: 3

NVBG030N120M3S

Trans MOSFET N-CH SiC 1.2KV 77A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG030N120M3S

SiC MOS D2PAK-7L 30mohm 1200V M3

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG030N120M3S

Trans MOSFET N-CH SiC 1.2KV 77A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

800+	56.56 EUR

Mindestbestellmenge: 800

NVBG030N120M3S

Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 780 Stücke:

Lieferzeit 10-14 Tag (e)

1+	59.59 EUR
10+	53.09 EUR
100+	46.6 EUR

NVBG030N120M3S

Trans MOSFET N-CH SiC 1.2KV 77A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG030N120M3S

MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

1+	59.19 EUR
10+	52.73 EUR
25+	49.6 EUR
50+	47.94 EUR
100+	46.29 EUR
250+	44.63 EUR
500+	41.84 EUR

NVBG030N120M3S

Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVBG040N120M3S

Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG040N120M3S

Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	32.84 EUR

Mindestbestellmenge: 800

NVBG040N120M3S

Description: ONSEMI - NVBG040N120M3S - Siliziumkarbid-MOSFET, n-Kanal, 49 A, 1.2 kV, 0.0405 ohm, D2PAK-7L
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 49A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.22V
MOSFET-Modul-Konfiguration: -
euEccn: NLR
Verlustleistung: 297W
Bauform - Transistor: D2PAK-7L
Anzahl der Pins: 7Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0405ohm
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG040N120M3S

Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

auf Bestellung 240 Stücke:

Lieferzeit 14-21 Tag (e)

4+	40.28 EUR
10+	35.69 EUR
25+	32.61 EUR
50+	30.45 EUR
100+	28.31 EUR

Mindestbestellmenge: 4

NVBG040N120M3S

Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG040N120M3S

MOSFET Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L SiC MOSFET 1200 V 40 mohm M3S Series in D2PAK-7LD package

auf Bestellung 240 Stücke:

Lieferzeit 10-14 Tag (e)

1+	49.19 EUR
10+	43.72 EUR
25+	40.78 EUR
50+	39.51 EUR
100+	38.23 EUR
250+	35.68 EUR
500+	32.61 EUR

NVBG040N120M3S

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG040N120M3S

Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

auf Bestellung 30 Stücke:

Lieferzeit 14-21 Tag (e)

4+	40.28 EUR
10+	35.69 EUR
25+	32.61 EUR

Mindestbestellmenge: 4

NVBG040N120M3S

SiC MOS D2PAK-7L 40mohm 1200V M3

Produkt ist nicht verfügbar

NVBG040N120M3S

Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

1+	49.53 EUR
10+	44.01 EUR
100+	38.49 EUR

NVBG040N120M3S

Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

auf Bestellung 52 Stücke:

Lieferzeit 14-21 Tag (e)

4+	41.82 EUR
5+	38.87 EUR
10+	36.23 EUR
20+	33.85 EUR
50+	31.67 EUR

Mindestbestellmenge: 4

NVBG040N120SC1

Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 800 Stücke:

Lieferzeit 14-21 Tag (e)

800+	63.49 EUR

Mindestbestellmenge: 800

NVBG040N120SC1

MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, D2PAK?7L

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

1+	58.7 EUR
10+	54.91 EUR
25+	54.45 EUR
50+	54.42 EUR
100+	49.46 EUR
800+	42.2 EUR

NVBG040N120SC1
Produktcode: 179416

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

NVBG040N120SC1

Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 66 Stücke:

Lieferzeit 14-21 Tag (e)

3+	56.32 EUR
10+	52.94 EUR
25+	47.44 EUR

Mindestbestellmenge: 3

NVBG040N120SC1

Trans MOSFET N-CH SiC 1.2KV 60A Automotive T/R

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG040N120SC1

auf Bestellung 135 Stücke:

Lieferzeit 21-28 Tag (e)

NVBG040N120SC1

Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)

800+	42.49 EUR

Mindestbestellmenge: 800

NVBG040N120SC1

Description: ONSEMI - NVBG040N120SC1 - Siliziumkarbid-MOSFET, SiC, Eins, n-Kanal, 60 A, 1.2 kV, 0.04 ohm, TO-263HV (D2PAK)
Verlustleistung: 357
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.04
SVHC: Lead (10-Jun-2022)

Produkt ist nicht verfügbar

NVBG040N120SC1

Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 66 Stücke:

Lieferzeit 14-21 Tag (e)

3+	56.32 EUR
10+	52.94 EUR
25+	47.44 EUR

Mindestbestellmenge: 3

NVBG040N120SC1

Description: ONSEMI - NVBG040N120SC1 - Siliziumkarbid-MOSFET, SiC, Eins, n-Kanal, 60 A, 1.2 kV, 0.04 ohm, TO-263HV (D2PAK)
Drain-Source-Spannung Vds: 1.2
Dauer-Drainstrom Id: 60
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 357
Gate-Source-Schwellenspannung, max.: 3
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 357
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.04
Rds(on)-Prüfspannung: 20
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.04
SVHC: Lead (10-Jun-2022)

Produkt ist nicht verfügbar

NVBG040N120SC1

Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG040N120SC1

Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 2715 Stücke:

Lieferzeit 10-14 Tag (e)

1+	64.06 EUR
10+	56.93 EUR
100+	49.79 EUR

NVBG045N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V

Produkt ist nicht verfügbar

NVBG045N065SC1

Silicon Carbide MOSFET,31mohm,650V Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG045N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V

Produkt ist nicht verfügbar

NVBG045N065SC1

Silicon Carbide MOSFET,31mohm,650V Automotive AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 14-21 Tag (e)

800+	37.21 EUR

Mindestbestellmenge: 800

NVBG045N065SC1

MOSFET SIC MOS D2PAK-7L 650V

auf Bestellung 1231 Stücke:

Lieferzeit 10-14 Tag (e)

1+	51.53 EUR
10+	47.52 EUR
100+	40.57 EUR
500+	32.91 EUR
800+	32.61 EUR

NVBG045N065SC1

NVBG045N065SC1

Produkt ist nicht verfügbar

NVBG060N065SC1

MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 44 mohm, 650 V, M2, D2PAK-7L

auf Bestellung 800 Stücke:

Lieferzeit 129-133 Tag (e)

1+	21.91 EUR
10+	19.31 EUR
25+	18.8 EUR
50+	17.74 EUR
100+	16.7 EUR
250+	16.17 EUR
500+	15.14 EUR

NVBG060N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101

auf Bestellung 1590 Stücke:

Lieferzeit 10-14 Tag (e)

1+	38.39 EUR
10+	34.11 EUR
100+	29.83 EUR

NVBG060N065SC1

NVBG060N065SC1

Produkt ist nicht verfügbar

NVBG060N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	25.45 EUR

Mindestbestellmenge: 800

NVBG060N065SC1

Silicon Carbide MOSFET,44mohm,650V Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG060N090SC1

N-Channel MOSFET

Produkt ist nicht verfügbar

NVBG060N090SC1

Silicon Carbide MOSFET,60mohm,900V Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG060N090SC1

Description: MOSFET N-CH 900V 5.8/44A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V

auf Bestellung 1460 Stücke:

Lieferzeit 10-14 Tag (e)

1+	48.15 EUR
10+	42.8 EUR
100+	37.44 EUR

NVBG060N090SC1

MOSFET 60MOHM

auf Bestellung 1003 Stücke:

Lieferzeit 10-14 Tag (e)

1+	47.31 EUR
10+	42.03 EUR
25+	39.21 EUR
50+	38 EUR
100+	36.78 EUR
250+	34.32 EUR
500+	31.45 EUR

NVBG060N090SC1

auf Bestellung 594 Stücke:

Lieferzeit 21-28 Tag (e)

NVBG060N090SC1

Description: MOSFET N-CH 900V 5.8/44A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

800+	31.94 EUR

Mindestbestellmenge: 800

NVBG060N090SC1-ENG

SiC MOS D2PAK 7L 60mohm 900V

Produkt ist nicht verfügbar

NVBG070N120M3S

Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

800+	35.33 EUR

Mindestbestellmenge: 800

NVBG070N120M3S

Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG070N120M3S

Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG070N120M3S

MOSFET Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L

auf Bestellung 1599 Stücke:

Lieferzeit 10-14 Tag (e)

1+	35.38 EUR
10+	31.43 EUR
25+	29.32 EUR
50+	28.41 EUR
100+	27.49 EUR
250+	25.64 EUR
500+	23.46 EUR

NVBG070N120M3S

Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

800+	38.46 EUR

Mindestbestellmenge: 800

NVBG070N120M3S

Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG075N065SC1

MOSFET SIC MOS D2PAK-7L 650V

auf Bestellung 1594 Stücke:

Lieferzeit 10-14 Tag (e)

1+	32.28 EUR
10+	28.67 EUR
25+	26.77 EUR
50+	25.92 EUR
100+	25.1 EUR
250+	23.41 EUR
500+	21.4 EUR

NVBG075N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
Qualification: AEC-Q101

auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)

800+	22.02 EUR

Mindestbestellmenge: 800

NVBG075N065SC1

Silicon Carbide MOSFET,6mohm,650V Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG075N065SC1

Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
Qualification: AEC-Q101

auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)

1+	31.89 EUR
10+	28.1 EUR
100+	24.3 EUR

NVBG075N065SC1

SiliconCarbide MOSFET,6mohm,650V Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG080N120SC1

Description: ONSEMI - NVBG080N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 30 A, 1.2 kV, 0.08 ohm, TO-263HV (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 179W
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7Pin(s)
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.08ohm

auf Bestellung 1758 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG080N120SC1

Trans MOSFET N-CH SiC 1.2KV 30A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG080N120SC1

Trans MOSFET N-CH SiC 1.2KV 30A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG080N120SC1

Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V

Produkt ist nicht verfügbar

NVBG080N120SC1

Trans MOSFET N-CH SiC 1.2KV 30A Automotive 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG080N120SC1

auf Bestellung 600 Stücke:

Lieferzeit 21-28 Tag (e)

NVBG080N120SC1

Trans MOSFET N-CH SiC 1.2KV 30A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

800+	26.39 EUR

Mindestbestellmenge: 800

NVBG080N120SC1

MOSFET SIC MOS D2PAK-7L 80MOHM 1200V

auf Bestellung 1453 Stücke:

Lieferzeit 10-14 Tag (e)

1+	24.2 EUR
10+	21.33 EUR
25+	20.75 EUR
50+	19.59 EUR
100+	18.44 EUR
250+	17.88 EUR
500+	16.72 EUR

NVBG080N120SC1

Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V

auf Bestellung 760 Stücke:

Lieferzeit 10-14 Tag (e)

1+	31.31 EUR
10+	28.78 EUR
100+	24.3 EUR

NVBG089N65S3F

MOSFET Single N-Channel Power MOSFET SUPERFET III, FRFET, 650 V , 37 A, 89 mohm, D2PAK 7 lead SuperFET III 650V 89mohm D2PAK 7 Lead

Produkt ist nicht verfügbar

NVBG089N65S3F

Description: SF3 FRFET AUTO, 89MOHM, D2PAK 7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 5V @ 970µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)

800+	9.55 EUR
1600+	8.59 EUR

Mindestbestellmenge: 800

NVBG095N065SC1

Silicon Carbide MOSFET,70mohm,650V Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG095N065SC1

Silicon Carbide MOSFET,70mohm,650V Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBG095N65S3F

Description: SF3 FRFET AUTO, 95MOHM, D2PAK 7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Qualification: AEC-Q101

auf Bestellung 1600 Stücke:

Lieferzeit 10-14 Tag (e)

800+	6.36 EUR
1600+	5.73 EUR

Mindestbestellmenge: 800

NVBG095N65S3F

Description: SF3 FRFET AUTO, 95MOHM, D2PAK 7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Qualification: AEC-Q101

auf Bestellung 2340 Stücke:

Lieferzeit 10-14 Tag (e)

2+	10.08 EUR
10+	8.65 EUR
100+	7.21 EUR

Mindestbestellmenge: 2

NVBG095N65S3F

MOSFET Single N-Channel Power MOSFET SUPERFET III, FRFET, 650 V , 36 A, 95 mohm, D2PAK 7 lead SuperFET III 650V 95mohm D2PAK 7 Lead

auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)

1+	10.01 EUR
10+	8.57 EUR
25+	7.8 EUR
100+	7.15 EUR
250+	6.72 EUR
500+	6.32 EUR
800+	5.68 EUR

NVBG1000N170M1

SIC 1700V MOS 1O IN TO263

Produkt ist nicht verfügbar

NVBG160N120SC1

auf Bestellung 630 Stücke:

Lieferzeit 21-28 Tag (e)

NVBG160N120SC1

Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

800+	18.74 EUR

Mindestbestellmenge: 800

NVBG160N120SC1

Description: ONSEMI - NVBG160N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 19.5 A, 1.2 kV, 0.16 ohm, TO-263HV (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 19.5A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Verlustleistung Pd: 136W
Gate-Source-Schwellenspannung, max.: 3V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7Pin(s)
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.16ohm
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.16ohm

auf Bestellung 73 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG160N120SC1

Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 13600 Stücke:

Lieferzeit 10-14 Tag (e)

800+	21.52 EUR

Mindestbestellmenge: 800

NVBG160N120SC1

Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG160N120SC1

Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 30 Stücke:

Lieferzeit 14-21 Tag (e)

9+	18.46 EUR
10+	17.63 EUR
25+	16.82 EUR

Mindestbestellmenge: 9

NVBG160N120SC1

MOSFET SIC MOS D2PAK-7L 160MOHM 1200V

auf Bestellung 1270 Stücke:

Lieferzeit 10-14 Tag (e)

1+	29.71 EUR
10+	26.47 EUR
25+	26.22 EUR
100+	23.92 EUR
250+	23.5 EUR
500+	21.67 EUR
800+	19.87 EUR

NVBG160N120SC1

Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 700 Stücke:

Lieferzeit 14-21 Tag (e)

9+	18.46 EUR
10+	17.63 EUR
25+	16.82 EUR

Mindestbestellmenge: 9

NVBG160N120SC1

Description: ONSEMI - NVBG160N120SC1 - SIC MOSFET, N-CH, 20V, 19.5A, TO-263HV
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2
Dauer-Drainstrom Id: 19.5
hazardous: false
usEccn: Unknown
Gate-Source-Schwellenspannung, max.: 3
MOSFET-Modul-Konfiguration: Single
euEccn: Unknown
Verlustleistung: 136
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7
Produktpalette: -
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 20
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.16
SVHC: No SVHC (15-Jan-2018)

Produkt ist nicht verfügbar

NVBG160N120SC1

Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBG160N120SC1

Description: ONSEMI - NVBG160N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 19.5 A, 1.2 kV, 0.16 ohm, TO-263HV (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 19.5A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7Pin(s)
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.16ohm

auf Bestellung 73 Stücke:

Lieferzeit 14-21 Tag (e)

NVBG160N120SC1

Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101

auf Bestellung 14024 Stücke:

Lieferzeit 10-14 Tag (e)

1+	31.15 EUR
10+	27.45 EUR
100+	23.74 EUR

NVBG160N120SC1

Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R

auf Bestellung 1600 Stücke:

Lieferzeit 14-21 Tag (e)

800+	17.22 EUR

Mindestbestellmenge: 800

NVBGS1D2N08H

MOSFET Power MOSFET, 80 V, 1.2 mohm, 353 A, Single N-Channel D2PAK-7L (Pb-Free)

Produkt ist nicht verfügbar

NVBGS1D2N08H

Description: T8-80V IN SUZHOU D2PAK7L FOR AUT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 290A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 5.7W (Ta), 259W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 40 V

Produkt ist nicht verfügbar

NVBGS1D2N08H

Power MOSFET Single N-Channel

Produkt ist nicht verfügbar

NVBGS4D1N15MC

Description: MOSFET N-CH 150V 20A/185A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 104A, 10V
Power Dissipation (Max): 3.7W (Ta), 316W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 574µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7285 pF @ 75 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVBGS4D1N15MC

Trans MOSFET N-CH 150V 20A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R

auf Bestellung 780 Stücke:

Lieferzeit 14-21 Tag (e)

7+	23.78 EUR
10+	20.68 EUR
25+	19.65 EUR
50+	17.65 EUR
100+	15.62 EUR
250+	14.65 EUR
500+	13.06 EUR

Mindestbestellmenge: 7

NVBGS4D1N15MC

Trans MOSFET N-CH 150V 20A 7-Pin(6+Tab) D2PAK T/R

Produkt ist nicht verfügbar

NVBGS4D1N15MC

Description: MOSFET N-CH 150V 20A/185A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 104A, 10V
Power Dissipation (Max): 3.7W (Ta), 316W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 574µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7285 pF @ 75 V
Qualification: AEC-Q101

auf Bestellung 374 Stücke:

Lieferzeit 10-14 Tag (e)

1+	27.9 EUR
10+	25.64 EUR
25+	24.58 EUR
100+	20.59 EUR
250+	19.27 EUR

NVBGS4D1N15MC

MOSFET MOSFET - Single N-Channel 150 V, 4.1 mohm, 185 A D2PAK7 (Pb-Free)

auf Bestellung 1328 Stücke:

Lieferzeit 10-14 Tag (e)

1+	23.69 EUR
10+	21.74 EUR
25+	21.28 EUR
50+	20.57 EUR
100+	19.57 EUR
800+	17.44 EUR

NVBGS4D1N15MC

auf Bestellung 740 Stücke:

Lieferzeit 21-28 Tag (e)

NVBGS4D1N15MC

Trans MOSFET N-CH 150V 20A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R

auf Bestellung 780 Stücke:

Lieferzeit 14-21 Tag (e)

7+	23.78 EUR
10+	20.68 EUR
25+	19.65 EUR
50+	17.65 EUR
100+	15.62 EUR
250+	14.65 EUR
500+	13.06 EUR

Mindestbestellmenge: 7

NVBGS6D5N15MC

MOSFET Power, Single N Channel, D2PAK7 150 V, 7 m, 121 A

Produkt ist nicht verfügbar

NVBGS6D5N15MC

Description: MOSFET N-CH 150V 15/121A D2PAK-7

auf Bestellung 4800 Stücke:

Lieferzeit 10-14 Tag (e)

NVBGS6D5N15MC

MOSFET PTNG 150V IN SUZHOU D2PAK7L FOR AUTOMOTIVE

Produkt ist nicht verfügbar

NVBGS6D5N15MC

NVBGS6D5N15MC

Produkt ist nicht verfügbar

NVBL099N65S3

Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

NVBLS001N06C

Description: MOSFET N-CH 60V 51A/422A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 284W (Tc)
Vgs(th) (Max) @ Id: 4V @ 562µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 4655 Stücke:

Lieferzeit 10-14 Tag (e)

1+	18.85 EUR
10+	16.16 EUR
100+	13.47 EUR
500+	11.88 EUR
1000+	10.7 EUR

NVBLS001N06C

Trans MOSFET N-CH 60V 51A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R

auf Bestellung 99 Stücke:

Lieferzeit 14-21 Tag (e)

9+	18.09 EUR
11+	14.84 EUR
25+	9.07 EUR

Mindestbestellmenge: 9

NVBLS001N06C

auf Bestellung 1940 Stücke:

Lieferzeit 21-28 Tag (e)

NVBLS001N06C

Trans MOSFET N-CH 60V 51A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R

Produkt ist nicht verfügbar

NVBLS001N06C

Description: ONSEMI - NVBLS001N06C - Leistungs-MOSFET, n-Kanal, 60 V, 422 A, 750 µohm, H-PSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 422A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 284W
Bauform - Transistor: H-PSOF
Anzahl der Pins: 8Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 750µohm

auf Bestellung 481 Stücke:

Lieferzeit 14-21 Tag (e)

NVBLS001N06C

Description: MOSFET N-CH 60V 51A/422A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 284W (Tc)
Vgs(th) (Max) @ Id: 4V @ 562µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)

2000+	10.02 EUR

Mindestbestellmenge: 2000

NVBLS001N06C

Trans MOSFET N-CH 60V 51A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R

Produkt ist nicht verfügbar

NVBLS001N06C

Trans MOSFET N-CH 60V 51A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R

auf Bestellung 99 Stücke:

Lieferzeit 14-21 Tag (e)

9+	18.09 EUR
11+	14.84 EUR
25+	9.07 EUR

Mindestbestellmenge: 9

NVBLS001N06C

MOSFET NFET TOLL 60V 1.0MO

auf Bestellung 4531 Stücke:

Lieferzeit 10-14 Tag (e)

1+	17.95 EUR
10+	15.56 EUR
25+	13.01 EUR
100+	11.81 EUR
250+	11.77 EUR
500+	11.09 EUR
1000+	10.54 EUR

NVBLS001N06C

auf Bestellung 481 Stücke:

Lieferzeit 14-21 Tag (e)

NVBLS0D5N04CTXG

Description: MOSFET N-CH 40V 65A/300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 475µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Part Status: Active
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVBLS0D5N04CTXG

Trans MOSFET N-CH 40V 65A T/R

Produkt ist nicht verfügbar

NVBLS0D5N04CTXG

MOSFET T6 40V SG SINGLE NCH TOLL 0.5 MOHMS MAX

auf Bestellung 3996 Stücke:

Lieferzeit 455-459 Tag (e)

1+	13.94 EUR
10+	11.95 EUR
25+	10.84 EUR
100+	9.94 EUR
250+	9.38 EUR
500+	8.78 EUR
1000+	7.9 EUR

NVBLS0D5N04CTXG

Description: ONSEMI - NVBLS0D5N04CTXG - Leistungs-MOSFET, n-Kanal, 40 V, 300 A, 0.0005 ohm, H-PSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 300
hazardous: false
Qualifikation: AEC-Q101
MSL: -
usEccn: EAR99
Verlustleistung Pd: 198.4
Gate-Source-Schwellenspannung, max.: 2.8
euEccn: NLR
Verlustleistung: 198.4
Bauform - Transistor: H-PSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 500
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 500
SVHC: Lead (10-Jun-2022)

auf Bestellung 1890 Stücke:

Lieferzeit 14-21 Tag (e)

NVBLS0D5N04CTXG

Description: MOSFET N-CH 40V 65A/300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 475µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 1860 Stücke:

Lieferzeit 10-14 Tag (e)

2+	14.06 EUR
10+	12.04 EUR
100+	10.04 EUR
500+	8.86 EUR
1000+	7.97 EUR

Mindestbestellmenge: 2

NVBLS0D5N04CTXG

auf Bestellung 1800 Stücke:

Lieferzeit 21-28 Tag (e)

NVBLS0D5N04CTXG

Trans MOSFET N-CH 40V 65A Automotive AEC-Q101 9-Pin(8+Tab) PSOF T/R

Produkt ist nicht verfügbar

NVBLS0D5N04M8TXG

MOSFET NMOS TOLL 40V 0.65

auf Bestellung 419 Stücke:

Lieferzeit 10-14 Tag (e)

NVBLS0D5N04M8TXG

Description: ONSEMI - NVBLS0D5N04M8TXG - MOSFET, N-CH, 40V, 300A, 175DEG C, 429W
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 2839 Stücke:

Lieferzeit 14-21 Tag (e)

NVBLS0D5N04M8TXG

Description: MOSFET N-CH 40V 300A 8HPSOF

auf Bestellung 2089 Stücke:

Lieferzeit 10-14 Tag (e)

NVBLS0D5N04M8TXG

Description: MOSFET N-CH 40V 300A 8HPSOF

auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)

NVBLS0D5N04M8TXG

Trans MOSFET N-CH 40V 300A Automotive 9-Pin(8+Tab) TO-LL T/R

Produkt ist nicht verfügbar

NVBLS0D7N04M8TXG

Description: MOSFET N-CH 40V 240A 8HPSOF

Produkt ist nicht verfügbar

NVBLS0D7N04M8TXG

Trans MOSFET N-CH 40V 240A Automotive 9-Pin(8+Tab) TO-LL T/R

Produkt ist nicht verfügbar

NVBLS0D7N04M8TXG

auf Bestellung 30 Stücke:

Lieferzeit 21-28 Tag (e)

NVBLS0D7N04M8TXG

Description: NMOS TOLL 40V 1.2 MOHM

Produkt ist nicht verfügbar

NVBLS0D7N04M8TXG

MOSFET NMOS TOLL 40V 1.2

auf Bestellung 1875 Stücke:

Lieferzeit 10-14 Tag (e)

NVBLS0D7N04M8TXG

Description: MOSFET N-CH 40V 240A 8HPSOF

auf Bestellung 1990 Stücke:

Lieferzeit 10-14 Tag (e)

128+	3.82 EUR

Mindestbestellmenge: 128

NVBLS0D7N04M8TXG

Description: NMOS TOLL 40V 1.2 MOHM

Produkt ist nicht verfügbar

NVBLS0D7N06C

Trans MOSFET N-CH 60V 54A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R

Produkt ist nicht verfügbar

NVBLS0D7N06C

MOSFET NFET TOLL 60V 0.75MO

auf Bestellung 6 Stücke:

Lieferzeit 10-14 Tag (e)

1+	20.93 EUR
10+	18.87 EUR
100+	16 EUR
500+	14.64 EUR
1000+	13.64 EUR
2000+	12.6 EUR

NVBLS0D7N06C

Description: MOSFET N-CH 60V 54A/470A 8HPSOF

Produkt ist nicht verfügbar

NVBLS0D7N06C

Trans MOSFET N-CH 60V 54A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R

Produkt ist nicht verfügbar

NVBLS0D7N06C

Description: ONSEMI - NVBLS0D7N06C - Leistungs-MOSFET, n-Kanal, 60 V, 470 A, 560 µohm, H-PSOF
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 470
Qualifikation: AEC-Q101
Verlustleistung Pd: 314
Gate-Source-Schwellenspannung, max.: 2.8
Verlustleistung: 314
Bauform - Transistor: H-PSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 560
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 560
SVHC: Lead (10-Jun-2022)

Produkt ist nicht verfügbar

NVBLS0D7N06C

Description: MOSFET N-CH 60V 54A/470A 8HPSOF

Produkt ist nicht verfügbar

NVBLS1D1N08H

auf Bestellung 438 Stücke:

Lieferzeit 21-28 Tag (e)

NVBLS1D1N08H

Single N-Channel Power MOSFET Automotive AEC-Q101

Produkt ist nicht verfügbar

NVBLS1D1N08H

Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 1598 Stücke:

Lieferzeit 10-14 Tag (e)

2+	12.2 EUR
10+	10.45 EUR
100+	8.71 EUR
500+	7.69 EUR
1000+	6.92 EUR

Mindestbestellmenge: 2

NVBLS1D1N08H

Description: ONSEMI - NVBLS1D1N08H - Leistungs-MOSFET, n-Kanal, 80 V, 351 A, 0.00105 ohm, MO-299A, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
Dauer-Drainstrom Id: 351
hazardous: false
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4
euEccn: NLR
Verlustleistung: 311
Bauform - Transistor: MO-299A
Anzahl der Pins: 9
Produktpalette: -
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.00105
SVHC: Lead (10-Jun-2022)

Produkt ist nicht verfügbar

NVBLS1D1N08H

Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVBLS1D1N08H

Single N-Channel Power MOSFET

Produkt ist nicht verfügbar

NVBLS1D1N08H

MOSFET T8-80V IN TOLL

auf Bestellung 3208 Stücke:

Lieferzeit 10-14 Tag (e)

1+	12.11 EUR
10+	10.4 EUR
100+	8.66 EUR
500+	7.62 EUR
1000+	6.88 EUR
2000+	6.55 EUR

NVBLS1D5N10MCTXG

N-Channel Power Trench MOSFET

Produkt ist nicht verfügbar

NVBLS1D5N10MCTXG

Description: PTNG 100V STD TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 331W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Qualification: AEC-Q101

auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)

2+	10.03 EUR
10+	8.6 EUR
100+	7.16 EUR
500+	6.32 EUR
1000+	5.69 EUR

Mindestbestellmenge: 2

NVBLS1D5N10MCTXG

MOSFET N-Channel PowerTrench MOSFET, 100V, 300A, 1.5mohm N-Channel PowerTrench MOSFET, 100V, 300A, 1.5mohm

auf Bestellung 4000 Stücke:

Lieferzeit 150-154 Tag (e)

1+	10.19 EUR
10+	8.75 EUR
25+	7.92 EUR
100+	7.29 EUR
250+	6.86 EUR
500+	6.42 EUR
1000+	5.77 EUR

NVBLS1D5N10MCTXG

Description: PTNG 100V STD TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 331W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Qualification: AEC-Q101

auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)

2000+	5.33 EUR

Mindestbestellmenge: 2000

NVBLS1D7N08H

Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 1932 Stücke:

Lieferzeit 10-14 Tag (e)

3+	7.81 EUR
10+	6.56 EUR
100+	5.31 EUR
500+	4.72 EUR
1000+	4.04 EUR

Mindestbestellmenge: 3

NVBLS1D7N08H

Trans MOSFET N-CH 80V 33A Automotive 9-Pin(8+Tab) PSOF T/R

Produkt ist nicht verfügbar

NVBLS1D7N08H

Trans MOSFET N-CH 80V 33A Automotive 9-Pin(8+Tab) PSOF T/R

Produkt ist nicht verfügbar

NVBLS1D7N08H

Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVBLS1D7N08H

MOSFET MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 mohm, 241 A

auf Bestellung 4923 Stücke:

Lieferzeit 10-14 Tag (e)

1+	7.76 EUR
10+	6.53 EUR
100+	5.28 EUR
500+	4.7 EUR
1000+	4.03 EUR
2000+	4.01 EUR

NVBLS1D7N10MCTXG

Description: PTNG 100V STD TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVBLS1D7N10MCTXG

MOSFET N-Channel PowerTrench MOSFET, 100V, 300A, 1.5mohm

auf Bestellung 1790 Stücke:

Lieferzeit 10-14 Tag (e)

1+	10.33 EUR
10+	8.68 EUR
25+	8.18 EUR
100+	7 EUR
250+	6.62 EUR
500+	6.23 EUR
1000+	5.33 EUR

NVBLS1D7N10MCTXG

Description: PTNG 100V STD TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101

auf Bestellung 1950 Stücke:

Lieferzeit 10-14 Tag (e)

2+	10.4 EUR
10+	8.73 EUR
100+	7.07 EUR
500+	6.28 EUR
1000+	5.38 EUR

Mindestbestellmenge: 2

NVBLS4D0N15MC

MOSFET Single N-Channel, 150 V, 4.4 mohm, 187 A Single N-Channel, 150 V, 4.4 mohm, 187 A

auf Bestellung 1141 Stücke:

Lieferzeit 10-14 Tag (e)

1+	17.46 EUR
10+	14.96 EUR
25+	14.75 EUR
100+	12.48 EUR
250+	12.36 EUR
500+	11 EUR
1000+	9.82 EUR

NVBLS4D0N15MC

Trans MOSFET N-CH 150V 22A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R

Produkt ist nicht verfügbar

NVBLS4D0N15MC

Description: MOSFET N-CH 150V 19A/187A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 187A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 316W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 584µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 1599 Stücke:

Lieferzeit 10-14 Tag (e)

2+	17.58 EUR
10+	15.07 EUR
100+	12.56 EUR
500+	11.08 EUR
1000+	9.97 EUR

Mindestbestellmenge: 2

NVBLS4D0N15MC

Trans MOSFET N-CH 150V 22A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R

Produkt ist nicht verfügbar

NVBLS4D0N15MC

Description: ONSEMI - NVBLS4D0N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 187 A, 0.0031 ohm, H-PSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 187A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 316W
Gate-Source-Schwellenspannung, max.: 3.7V
euEccn: NLR
Verlustleistung: 316W
Bauform - Transistor: H-PSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0031ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0031ohm

auf Bestellung 850 Stücke:

Lieferzeit 14-21 Tag (e)

NVBLS4D0N15MC

auf Bestellung 1950 Stücke:

Lieferzeit 21-28 Tag (e)

NVBLS4D0N15MC

Trans MOSFET N-CH 150V 22A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R

Produkt ist nicht verfügbar

NVBLS4D0N15MC

Description: MOSFET N-CH 150V 19A/187A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 187A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 316W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 584µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

NVBLS4D0N15MC